CN105097979B - 太阳能电池组 - Google Patents

太阳能电池组 Download PDF

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CN105097979B
CN105097979B CN201510243852.8A CN201510243852A CN105097979B CN 105097979 B CN105097979 B CN 105097979B CN 201510243852 A CN201510243852 A CN 201510243852A CN 105097979 B CN105097979 B CN 105097979B
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solar cell
layer
lattice constant
metamorphic buffer
semiconductor solar
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CN105097979A (zh
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W·古特
M·莫伊泽尔
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Azur Space Solar Power GmbH
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Abstract

一种太阳能电池组，其具有第一半导体太阳能电池，其中所述第一半导体太阳能电池具有由第一材料构成的pn结，所述第一材料具有第一晶格常数，并且具有第二半导体太阳能电池，其中所述第二半导体电池具有由第二材料构成的pn结，所述第二材料具有第二晶格常数，其中所述第一晶格常数小于所述第二晶格常数，并且所述太阳能电池组具有变质缓冲器，其中所述变质缓冲器包括第一下层和第二中层以及第三上层的序列，并且所述变质缓冲器包括InGaAs化合物或者AlInGaAs化合物或者InGaP化合物或者AlInGaP化合物，并且所述变质缓冲器构造在所述第一半导体太阳能电池和所述第二半导体太阳能电池之间，并且在所述变质缓冲器中晶格常数沿着所述变质缓冲器的厚度延伸变化，并且其中所述第二层具有比所述第一层和所述第三层更高的Al含量和/或所述第二层具有砷化物而所述第一层和所述第三层具有磷化物，并且所述第三层的晶格常数大于所述第二层的晶格常数而所述第二层的晶格常数大于所述第一层的晶格常数。

Description

太阳能电池组
技术领域
本发明涉及一种太阳能电池组。
背景技术
在III-V多族太阳能电池的外延中使用所谓的变质缓冲器(metamorphe Puffer)，以便在变质缓冲器上沉积由具有与衬底的晶格常数不同的晶格常数的材料构成的半导体层或者与位于缓冲器下方的层以高的质量分离。通过变质缓冲器构成所谓的具有与原始衬底的晶格常数不同的晶格常数的虚拟衬底。由此，能够增大材料的选择余地、尤其增大多族太阳能电池的不同元件的选择余地并且能够提高多族太阳能电池的效率。
期望的是，在制造期间通常增大变质缓冲器的晶格常数。由此，压缩地夹紧缓冲器的大多层，其中与张力夹紧的缓冲器相比均匀地构造错位并且产生尤其小的裂缝。此外期望的是，变质缓冲器的所有层对于确定波长的光是透明的，从而能够使光在其他太阳能电池中用于光电能量转换。
由《Comparison of arsenide and phosphide based graded buffer layersused in inverted metamorphic solar cells》(A.Zakaria、Richard R.King、M.Jackson和M.S.Goorsky；J.Appl.Phys.112，024907(2012年))已知分别具有变质缓冲器的多个太阳能电池组。此外，由US 2013/0312818 A1已知具有变质缓冲器的太阳能电池组。在《Current-matched triple-junction solar cell reaching 41.1％conversionefficiency under concentrated sunlight》(W.Guter、J.S.P.Philipps、M.Steiner、G.Siefer、A.Wekkeli、E.Welser、E.Olivia、A.Bett和F.Dimroth；AppliedPhysics Letter 94，223504，2009年)中也公开了如在此在图3中所示出的那样的太阳能电池组。
由《Kontrolle von Spannungsrelaxation und Defektbildung in metamorphenIII-V Halbleiterheterostrukturen für hocheffiziente Halbleiter-Solarzellen》(J.2009年论文，基尔工业学院)公开了具有变质缓冲器的其他太阳能电池组。
此外，在变质缓冲器中期望的是，已经在缓冲器中减小通过错位或者其他晶体缺陷的形成的晶格夹紧(Gitterverspannung)，其中尽可能在缓冲器中局部化晶体缺陷。尤其应当防止推进到半导体层组的其他部分中的线错位(Fadenversetzungen)。为此，在变质缓冲器中优选增大具有晶格常数的缓冲器层的硬度，以便尤其降低错位在位于其上方的层中的延展和/或阻碍位于其上方的层的张弛。与此相反，由《Elastische und plastischeEigenschaften von III-V Halbleitern für metamorphe Pufferstrukturen》(V.Klinger、T.G.Lorenz、M.Petzold和F.Dimroth；27.DGKK workshop－III/V半导体的外延－Erlangen，6./7.2012年12月)公开了，对于变质缓冲器而言在三元化合物Al0.4InxGa0.6-x(0<x<0.6)中晶格常数随着铟含量增大而增大，而纳米硬度减小，其中逐渐通过铟替代元素镓。
发明内容
由此，本发明的任务是说明一种扩展现有技术的装置。
根据本发明的主题提供一种太阳能电池组，其具有第一半导体太阳能电池，其中所述第一半导体太阳能电池具有由第一材料构成的pn结，所述第一材料具有第一晶格常数，并且具有第二半导体太阳能电池，其中所述第二半导体太阳能电池具有由第二材料构成的pn结，所述第二材料具有第二晶格常数，其中第一晶格常数小于第二晶格常数，并且太阳能电池组具有变质缓冲器，其中所述变质缓冲器包括具有第一下层和第二中层以及第三上层的重叠的层的序列，并且变质缓冲器包括InGaAs化合物和/或AlInGaAs化合物和/或InGaP化合物和/或AlInGaP化合物，并且变质缓冲器构造在第一半导体太阳能电池和第二半导体太阳能电池之间，并且在变质缓冲器中晶格常数沿着其厚度延伸变化，其中第二层具有比第一层和第三层更高的Al含量和/或第二层具有比第一层更低的磷含量而第三层具有磷化物，并且第三层的晶格常数大于第二层的晶格常数而第二层的晶格常数大于第一层的晶格常数。
要注意的是，变质缓冲器的层数是至少三个，然而根据应用情况也可以制造六层或者直至三十层或更多层的单独的层。此外要注意的是，通常薄地、优选在600nm以下、最优选在300nm以下构造变质缓冲器的各个层。此外，材料的晶格常数总是涉及没有夹紧的状态。特别地，基本上在两个层之间的接合点(Fügungsstelle)处两个邻接的层的横向的(in-plane)晶格常数几乎相等，而垂直的(out-of-plane)晶格常数和没有夹紧的情形中的晶格常数不同。
根据本发明的装置的一个优点是，尽管进一步增大的晶格常数但是借助变质缓冲器的第二层中的高的Al含量发生特别软的层、即具有低的纳米硬度的层在缓冲器内的构造。由此，减轻第二层中的错误匹配错位的形成。研究尤其示出，在第二层中优选构造错位而在第二层中保留并且不使其推进到半导体太阳能电池的位于下方和/或上方的活性层中。由此，防止活性层中的电荷载体的不期望的减少以及太阳能电池组中的半导体太阳能电池的效率的降低。换言之，借助具有比第一层和第三层更高的Al含量的第二层的引入并且如有必要与变质缓冲器的其他层相比引入一类“期望断裂点(Sollbruchstelle)”，其方式是，特别软地构造第二层。在此，软的层理解为所选择的层的与变质缓冲器的所包围的层相比更低的纳米硬度。
另一个优点是，借助第二层的引入减小通过压缩的或者扩张的压力的影响引起的半导体衬底的弯曲。尤其在外延中的其他层的增长(Aufwachsen)时实现层增长的改善的均匀性和改善的可复现性并且可以本地地制造太阳能电池组的全部层。由此，能够使具有非常不同的晶格常数或者带距(以下也称作带隙的能量)的半导体太阳能电池简单且低成本地以及以高的效率在外延过程的范畴中连续地增长。半导体太阳能电池内的缺陷点或者错位可靠地由“期望断裂点”限制。
另一个优点是，太阳能电池组在其制造之后具有更小的残留应力。这引起更高的运行安全性和在太阳能电池组中更高的效率。
另一个优点是，具有不同的晶格常数和带隙的多个半导体太阳能电池组可以简单地接合在一起。一个优点是，具有带隙的各个半导体太阳能电池如此接合成太阳能电池组，使得提高太阳能电池组的总效率。
在一种优选的实施方式中，变质缓冲器的晶格常数朝两个半导体太阳能电池的方向从层至层地优选分别增大至少最优选分别增大至少
在一种扩展方案中，变质缓冲器的层具有第三晶格常数。所述第三晶格常数大于第二半导体太阳能电池的晶格常数。研究示出，由此可以进一步改善变质缓冲器的松弛。
在一种扩展方案中，第二层具有比第一半导体太阳能电池更大的晶格常数。在一种实施方式中，在变质缓冲器中设置第四层，其中第四层设置在第三层上方并且物质锁合地(stoffschlüssig)与第三层连接。此外，第四层具有比第二半导体太阳能电池更小的晶格常数。
在一种实施方式中，变质缓冲器的第二层具有与第二半导体太阳能电池同样大的晶格常数或者在另一种替代方案中变质缓冲器的第二层具有比第二半导体太阳能电池大最多的晶格常数。
在一种优选的扩展方案中，第二层的Al含量大于变质缓冲器的所有其他层的Al含量。研究示出，在变质缓冲器内可以在预给定的位置处构造最软的层并且优选在缓冲器中的预给定的位置处构造错位。
在一种扩展方案中，在变质缓冲器的三个层的序列中仅仅构成InGaAs层和/或AlInGaAs层。在一种替代的实施方式中，在变质缓冲器的三个层的序列中仅仅构造InGaP层和/或AlInGaP层。理解为，除化合物InGaAs、AlInGaAs、InGaP和AlInGaP以外可以分别构造其他额外的物质。
在一种实施方式中，第一层与第二层以及第二层与第三层分别物质锁合地连接。在一种扩展方案中，第一层和第三层具有比第二层更大的纳米硬度。由此，有效抑制从第二层伸出到在所包围的层中的错位的继续延伸。
在另一种实施方式中设置第三半导体太阳能电池，其中在第二半导体太阳能电池和第三半导体太阳能电池之间构造另一个变质缓冲器。换言之，在整个太阳能电池组中构造两个在空间上彼此分离的变质缓冲器。在另一种实施方式中，在两个半导体太阳能电池之间构造两个变质缓冲器的序列。特别地，在第一半导体太阳能电池和第二半导体太阳能电池之间除所述变质缓冲器以外构造另一个变质缓冲器。此外优选的是，半导体太阳能电池中的每一个包含一个pn结。此外要注意的是，变质缓冲器层不是隧道二极管的pn结的一部分。
在另一种扩展方案中，第二层不具有氮化物。由此避免第二层的特别小的纳米硬度增大。
附图说明
以下参照附图进一步阐述本发明。在此，借助相同的参考标记描述相同类型的部件。所示出的实施方式是强烈示意性的，即间距和横向的以及垂直的延伸是不按比例的并且只要没有其他说明也不具有可推导的几何互相关系。附图示出：
图1：具有变质缓冲器的太阳能电池组的根据本发明的第一实施方式；
图2：具有两个重叠的变质缓冲器的序列；
图3：根据现有技术的变质缓冲器的示图。
具体实施方式
图1的示图示出第一实施方式的示意图，所述示意图具有太阳能电池组10，所述太阳能电池组具有第一半导体太阳能电池G，其中所述第一半导体太阳能电池G具有由第一材料构成的pn结，所述第一材料具有第一晶格常数(在示图D1中示出)，并且具有第二半导体太阳能电池IGA和第三半导体太阳能电池IGP，其中第二半导体太阳能电池IGA具有由第二材料构成的pn结，所述第二材料具有第二晶格常数(在示图D1中示出)，其中第一晶格常数小于第二晶格常数。在太阳能电池组10的第一半导体太阳能电池G和第二半导体太阳能电池IGA之间构造变质缓冲器40，以便在两个半导体太阳能电池G和IGA的不同晶格常数之间进行调解(vermitteln)。通过第二半导体太阳能电池IGA发生光入射L到太阳能电池组10中。理解为，各个太阳能电池G、IGA、IGP的参考标记指出优选使用的化学物质，即G代表锗，IGA代表铟镓砷而IGP代表铟镓磷。以下，GA表示砷化镓而IGA1和IGA2表示与彼此相比并且与IGA太阳能电池相比不同的组合物、即化学计算。
在一种没有示出的实施方式中，在第一半导体太阳能电池G和变质缓冲器40之间构造一个或者多个中间层、优选具有与第一半导体太阳能电池G相等的晶格常数a。此外，在第一变质缓冲器40和第二半导体太阳能电池IGA之间构造一个或多个第二中间层。
在各个层的示图中，相应的层的所示图的宽度是相应的层的晶格常数的度量。在各个层中，晶格常数部分示为恒定的而且通过层的厚度示为增大或者减小。理解为，在两个层之间的边界面上相互接触的层的内面的晶格常数几乎相等。
在此，第一变质缓冲器40由总共六个单独的缓冲器层组成。在第一半导体太阳能电池G上构造变质缓冲器40的第一变质缓冲器层MP1，所述第一变质缓冲器层具有比第一半导体太阳能电池G的晶格常数a稍大的晶格常数a。在所述第一缓冲器层MP1上构造第二变质缓冲器层MP2，所述第二变质缓冲器层具有比所述第一变质缓冲器层MP1的晶格常数稍大的晶格常数。在所述第二缓冲器层MP2上构造第三变质缓冲器层MP3，所述第三变质缓冲器层具有比所述第二变质缓冲器层MP2的晶格常数稍大的晶格常数。在所述第三缓冲器层MP3上构造第四变质缓冲器层MP4，所述第四变质缓冲器层具有比所述第三变质缓冲器层MP3的晶格常数稍大的晶格常数。在所述第四缓冲器层MP4上构造第五变质缓冲器层MP5，所述第五变质缓冲器层具有比第四变质缓冲器层MP4的晶格常数稍大的晶格常数。在所述第五缓冲器层MP5上构造第六变质缓冲器层MP6，所述第六变质缓冲器层具有比所述第五变质缓冲器层MP5的晶格常数稍小的晶格常数。在所述第六缓冲器层MP6上构造第二半导体太阳能电池IGA。
为了阐明根据本发明的实施方式，与太阳能电池组10平行地在第一示图D1中和在第二示图D2中以及在第三示图D3中示出所选择的用于变质缓冲器40和第一半导体太阳能电池G的区域并且部分用于第二半导体太阳能电池IGA的物理参数。在第一示图D1中，沿着X轴示出晶格常数a的大小和带隙Eg的大小，而沿着Y轴示出各个层的序列。在第二示图D2中，沿着X轴示出铟含量和铝含量，而沿着Y轴示出各个层的序列。此外，在第三示图D3中沿着X轴示出砷含量、磷含量和铟含量。在两个示图D2和D3中，各个掺杂物质变化参考化学符号。然而，以下在阐述中仅仅说明相应的化学元素的完整名称。示图D2和D3分配给根据本发明的主题的两种不同的实施方式并且因此不描述同一实施方式。
在第一示图D1中示出，晶格常数a从第一半导体太阳能电池G开始直至第五变质缓冲器层MP5增长，而在第六变质缓冲器层MP6中减小，以便在随后的两个半导体太阳能电池IGA和IGP中保持恒定。由于清楚性的原因，阶梯状地示出没有夹紧的晶格常数a的变化。然而从以下出发：内面的晶格常数a在大多非常薄的层中近似连续地变化。在此，将具有小于600nm的厚度的层称作薄的层。与晶格常数a的所述变化不同地，带隙Eg的能量从第一半导体太阳能电池G直至第一变质缓冲器层MP1跳跃地增大。在从第一变质缓冲器层MP1直至包含第四变质缓冲器层MP4的变化中，带隙Eg的能量以小的波动保持在第一变质缓冲器层MP1的水平上。由此，保证变质缓冲器的足够的透明度。从第四变质缓冲器层MP4出发直至第五变质缓冲器层MP5，带隙Eg的能量再次下降，然而保持在由第一半导体太阳能电池G给定的初始水平以上。在从第五变质缓冲器层MP5直至第六变质缓冲器层MP6并且直至第二半导体太阳能电池IGA的另一个变化中，带隙Eg的能量阶梯状地进一步增大。
第二示图D2描述根据本发明的具有由AlInGaAs和InGaAs构成的变质缓冲器的构造。在第二示图D2中示出，仅仅第四变质缓冲器层MP4具有显著增大的铝含量。直接与第四变质缓冲器层MP4连接的两个变质缓冲器层MP3和MP5与变质缓冲器的其他层相同地具有明显更低的铝含量。与铝含量的变化不同，第一变质缓冲器层MP1直至包含第五变质缓冲器层MP5之间的铟含量阶梯状地并且类似于示图D1中的晶格常数a地增大。随后，从第五变质缓冲器层MP5出发直至第六变质缓冲器层MP6，铟含量再次降低。换言之，在变质缓冲器中，第四变质缓冲器层MP4具有最高的铝含量和第二高的铟含量。在此也应当指出，由于清楚性的原因将相应的层中的各个组合物示为均匀的。然而理解为，在两个重叠的层之间的边界面上所述组合物连续变化。此外应当指出，在此所述第四变质缓冲器层MP4相应于在说明书开始时所提及的第二层。此外，在说明书开始时所提及的第一层和第三层在此相应于第三变质缓冲器层MP3或者第五变质缓冲器层MP5。
第三示图D3描述根据本发明的具有由InGaAs和InGaP构成的变质缓冲器的构造。在第三示图D3中，使磷含量从第一变质缓冲器层MP1出发直至包含第六变质缓冲器MP6保持近似恒定，除第四变质缓冲器层MP4以外。在此，层MP1至MP6由磷化物组成。在此，第四变质缓冲器MP4不具有磷。与此不同，仅仅第四变质缓冲器层MP4具有砷含量。换言之，所述第四变质缓冲器层MP4由砷化物组成。可以如此调节层MP4的特性，使得能够制造与所包围的变质缓冲器层MP3和MP5相比特别小的纳米硬度或者软的层。
在图2的示图中示出具有两个重叠的变质缓冲器的序列的实施方式。以下仅仅阐述与图1的实施方式的区别。再次将各个层的宽度视作晶格常数的大小的量度。随后，第二变质缓冲器50的晶格常数平均上大于第一缓冲器40平均的晶格常数。所述第一变质缓冲器40构造在由GA构成的第一半导体太阳能电池和由IGA1构成的第二半导体太阳能电池之间。具有总共五个变质缓冲器层的序列的第二变质缓冲器50构造在第二半导体太阳能电池IGA1和由IGA2构成的第四半导体太阳能电池之间，以第七变质缓冲器MP7开始直至包含第十一变质缓冲器层MP11。在第一半导体太阳能电池GA上连接第三半导体太阳能电池IGP。
在第二变质缓冲器50中，第九变质缓冲器层MP9相应于第四变质缓冲器层MP4，其中两个层根据本发明或者比所包围的半导体层MP3和MP5或者MP8和MP9具有更高的铝含量，或者与其他半导体层MP1、MP2、MP3、MP5和MP6或者MP7、MP8、MP10和MP11不同替代磷化物由砷化物组成。由此，第九变质缓冲器层MP9与变质缓冲器层MP4同样具有比两个直接相邻的变质缓冲器层MP8和MP10或者MP3和MP4更小的纳米硬度。换言之，除构造“期望断裂点”的第四变质缓冲器层MP4以外，借助第九变质缓冲器层MP9构造另一个“期望断裂点”。
一个优点是，借助制造多个变质缓冲器的序列轻而易举地均衡各个半导体太阳能电池的较大的晶格差别。在此，在变质缓冲器40和50的软的层中能够可靠捕获可能的错位。
在图3中示出变质缓冲器100的根据现有技术的实施方式。在此，变质InGaAs缓冲器100同样由六个变质缓冲器层MPA至MPF组成。所述变质缓冲器100设置在第一半导体太阳能电池G和第二半导体太阳能电池IGA之间。所述第二半导体太阳能电池IGA由第三半导体太阳能电池IGP覆盖。
以下仅仅阐述与在图1中所示出的根据本发明的实施方式的不同。通过变质缓冲器仅仅由InGaAs和AlInGaAs组成，在此仅仅示出两个示图D1和D2。根据第一示图D1晶格常数a的变化在第一近似中相应于根据本发明的第一实施方式的晶格常数a的变化，而在比较带隙Eg的两个变化时示出区别。虽然在现有技术中在第一半导体太阳能电池G和变质缓冲器MPA之间的边界面上也可比较地构造带隙Eg中的跳跃，然而在另一个变化中带隙的大小除一些小的增长以外近似连续地减小，其中最终第二半导体太阳能电池的带隙Eg仍然显著位于第一半导体太阳能电池G的带隙Eg以上。然而，在根据现有技术的变质缓冲器100中没有构造约在变质缓冲器100中间的带隙Eg的大小方面的显著下降。
在根据示图D2的铟含量的变化中，也示出层MPA和层MPE之间的阶梯状增大。然而，在铝含量的变化中存在与根据本发明的变化的区别，即在现有技术中层MPA直至MPF混合铝，以便增大缓冲器层的带隙并且改善变质缓冲器的透明度。因为具有更高的铟含量的InGaAs层具有更小的带隙，所以尤其在高的铟含量的层中也期望更高的铝含量。因为在所述情形中层MPE具有比第二半导体太阳能电池IGA更大的晶格常数，所以尤其对于层MPE需要更高的铝含量，以便保证所期望的透明度。然而，与本发明的主题不同，在具有更高的铟含量的层中没有再次降低铝含量。

Claims (15)

1.一种太阳能电池组(10)，其具有：
第一半导体太阳能电池(G)，其中，所述第一半导体太阳能电池(G)具有由第一材料构成的pn结，所述第一材料具有第一晶格常数；
第二半导体太阳能电池(IGA)，其中，所述第二半导体太阳能电池(IGA)具有由第二材料构成的pn结，所述第二材料具有第二晶格常数；
所述第一晶格常数小于所述第二晶格常数；
变质缓冲器(40)，其中，所述变质缓冲器(40)包括具有第一下层(MP3)和第二中层(MP4)以及第三上层(MP5)的重叠的层的序列，并且所述变质缓冲器(40)包括InGaAs化合物和/或AlInGaAs化合物和/或InGaP化合物和/或AlInGa化合物，并且所述变质缓冲器(40)构造在所述第一半导体太阳能电池(G)和所述第二半导体太阳能电池(IGA)之间，并且在所述变质缓冲器(40)中所述晶格常数(a)沿着所述变质缓冲器的厚度延伸变化，
其中，
所述第二中层(MP4)具有比所述第一下层(MP3)和所述第三上层(MP5)更高的Al含量；
和/或，所述第二中层(MP4)具有比所述第一下层(MP3)和所述第三上层(MP5)更低的磷含量；
并且所述第三上层(MP5)的晶格常数大于所述第二中层(MP4)的晶格常数而所述第二中层(MP4)的晶格常数大于所述第一下层(MP3)的晶格常数，
其特征在于，所述变质缓冲器(40)的一层具有第三晶格常数，并且所述第三晶格常数大于所述第二半导体太阳能电池(IGA)的晶格常数。
2.根据权利要求1所述的太阳能电池组(10)，其特征在于，所述变质缓冲器(40)的晶格常数朝所述第二半导体太阳能电池(IGA)的方向从层至层分别增大至少
3.根据权利要求1所述的太阳能电池组(10)，其特征在于，所述变质缓冲器(40)的晶格常数朝所述第二半导体太阳能电池(IGA)的方向从层至层分别增大至少
4.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，所述变质缓冲器(40)的第二中层(MP4)具有与所述第二半导体太阳能电池(IGA)同样大的晶格常数或者所述变质缓冲器(40)的第二中层(MP4)具有比所述第二半导体太阳能电池(IGA)大最多的晶格常数。
5.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，所述第二中层(MP4)具有比所述第一半导体太阳能电池(G)更大的晶格常数。
6.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，设置有第四层(MP6)，所述第四层(MP6)设置在所述第三上层(MP5)上方并且物质锁合地与所述第三上层(MP5)连接，并且所述第四层(MP6)具有比所述第二半导体太阳能电池(IGA)更小的晶格常数。
7.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，所述第二中层(MP4)的Al含量大于所述变质缓冲器(40)的所有其他层(MP1，MP2，MP3，MP5，MP6)的Al含量。
8.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，在所述变质缓冲器(40)的三个层(MP1，MP2，MP3，MP4，MP5，MP6)的序列内仅仅构造InGaAs层和/或AlInGaAs层。
9.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，在所述变质缓冲器(40)的三个层(MP1，MP2，MP3，MP4，MP5，MP6)的序列内仅仅构造InGaP层和/或AlInGaP层。
10.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，所述第一下层(MP3)与所述第二中层(MP4)物质锁合地连接并且所述第二中层(MP4)与所述第三上层(MP5)物质锁合地连接。
11.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，所述第一下层(MP3)和所述第三上层(MP5)具有比所述第二中层(MP4)更大的纳米硬度。
12.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，设置有第三半导体太阳能电池，并且在所述第二半导体太阳能电池(IGA)和所述第三半导体太阳能电池之间构造另一个变质缓冲器(50)，或者在所述第一半导体太阳能电池(G)和所述第二半导体太阳能电池(IGA)之间除所述变质缓冲器(40)以外构造另一个变质缓冲器(50)。
13.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，所述半导体太阳能电池(G，IGP，IGA，IGA1，IGA2)中的每一个包含一个P/N结。
14.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，所述第二中层(MP4)不包括氮化物。
15.根据权利要求1或2所述的太阳能电池组(10)，其特征在于，所述变质缓冲器层不是隧道二极管的pn结的一部分。
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