CN107039557B - 堆叠状的多结太阳能电池 - Google Patents

堆叠状的多结太阳能电池 Download PDF

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CN107039557B
CN107039557B CN201611216712.2A CN201611216712A CN107039557B CN 107039557 B CN107039557 B CN 107039557B CN 201611216712 A CN201611216712 A CN 201611216712A CN 107039557 B CN107039557 B CN 107039557B
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W·古特
M·莫伊泽尔
T·勒泽纳
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Abstract

堆叠状的多结太阳能电池，其包括至少三个子电池以及变质的缓冲区，所述三个子电池中的每一个具有发射极和基极，第一子电池包括由具有至少元素GaInP的化合物制成的第一层，第一层的能带隙大于1.75eV，第一层的晶格常数位于和之间的范围内，第二子电池包括由具有至少元素GaAs的化合物制成的第二层，第二层的能带隙位于1.35eV和1.70eV之间的范围内，第二层的晶格常数位于和之间的范围内，第三子电池包括由具有至少元素GaInAs的化合物制成的第三层，第三层的能带隙小于1.25eV，第三层的晶格常数大于第二子电池或者第三子电池中的至少一个由具有至少元素GaInAsP的化合物制成并且具有大于1％的磷含量和大于1％的铟含量，在两个子电池之间不构造有半导体键合。

Description

堆叠状的多结太阳能电池
技术领域
本发明涉及一种堆叠状的多结太阳能电池。
背景技术
由Patel等人所著的出版文献“Experimental Results from PerformanceImprovement and Radiation Hardening of Inverted Metamorphic Multi-JunctionSolar Cells”(Proceedings of 37th IEEE PVSC，西雅图(2011年))已知反向变质的四结太阳能电池(IMM4J)，其具有大约34％(AM0)的寿命初期(beginning-of-life，BOL)有效作用系数和与商业上通用的三结太阳能电池相比相对小的大约82％的寿命末期(end-of-life，EOL)剩余系数。在此，与太阳能电池相对于太阳的使用和定向相比，在生长衬底上的外延沉积以相反的顺序(反向地)进行。
此外，由Bolsvert等人在Proc.of 35th IEEE PVSC，火奴鲁鲁，夏威夷，2010年，ISBN：978-1-4244-5891-2中所著的出版文献“Development of Advanced Space SolarCells at Spectrolab”已知一种基于半导体键合技术的GaInP/GaAs/GaInAsP/GaInAs四结太阳能电池。
由Dimroth等人在Progr.Photovolt：Res.Appl.2014；22：277-282中所著的出版文献“Wafer bonded four-junction GaInP/GaAs/GaInAsP/GaInAs concentrator solarcells with 44.7％efficiency”也已知一种另外的四结太阳能电池。
在最后提到的两篇出版文献中，从InP衬底出发，GaInAsP太阳能电池分别以大约1.0eV的能带隙与晶格匹配地沉积。在第二沉积时，以反向的顺序在GaAs衬底上制造具有较高的带隙的上部的太阳能电池。整个多结太阳能电池的形成通过两个外延晶片的直接的半导体键合、借助GaAs衬底的随后移除以及进一步的过程步骤来进行。
文献CN 103346191A描述了一种在衬底的两个相对置的侧上生成长的四结太阳能电池。
然而，借助于键合过程的制造过程是成本密集的并且降低在制造时的生产率。
耐辐射性的优化、尤其也对于非常高的辐射剂量的耐辐射性的优化是发展未来的宇宙航行太阳能电池的重要目标。除了提高寿命开始或者寿命初期(BOL)的有效作用系数之外，目标也在于提高寿命末期(EOL)的有效作用系数。
此外，制造成本具有决定性的意义。在本发明的时间点上的工业标准通过与晶格匹配的和变质的GaInP/GaInAs/Ge三结太阳能电池给出。为此，通过GaInP上部电池和GaInAs中部电池在相对于InP衬底成本有利的Ge衬底上的沉积来制造多结太阳能电池，其中，Ge衬底构成下部电池。
发明内容
在此背景下，本发明的任务在于，说明一种扩展现有技术的设备。
根据本发明的主题，提供一种堆叠状的多结太阳能电池，其包括：至少三个子电池，其中，所述三个子电池中的每一个具有发射极和基极，其中，所述第一子电池包括由具有至少元素GaInP的化合物制成的第一层，并且所述第一层的能带隙大于1.75eV，并且所述第一层的晶格常数位于和之间的范围内，其中，所述第二子电池包括由具有至少元素GaAs的化合物制成的第二层，并且所述第二层的能带隙位于1.35eV和1.70eV之间的范围内，并且所述第二层的晶格常数位于和之间的范围内，其中，所述第三子电池包括由具有至少元素GaInAs的化合物制成的第三层，并且所述第三层的能带隙小于1.25eV，并且所述第三层的晶格常数大于所述三个层的厚度分别大于100nm并且所述三个层在此构造为所述相应的三个子电池的发射极的一部分和/或基极的一部分和/或位于发射极和基极之间的空间电荷区的一部分。在所述第二子电池和所述第三子电池之间构造有变质的缓冲区，其中，所述缓冲区具有至少三个层的序列，并且所述缓冲区的层的晶格常数大于所述第二层的晶格常数，并且所述缓冲区的层的晶格常数在所述序列的情况下朝所述第三子电池的方向从层到层地增加。所述第二子电池、即第二层或者所述第三子电池中的至少一个包括具有至少元素GaInAsP的化合物并且具有大于1％的磷含量和大于1％的铟含量。在所述整个堆叠的两个子电池之间不构造有半导体键合。
不言而喻地，堆叠状的多结太阳能电池单片式地构造。应指出，在多结太阳能电池的太阳能电池的每一个中发生光子的吸收并且由此发生载流子的生成，其中，太阳光总是首先穿过具有最大带隙的子电池入射。换言之，太阳能电池堆叠借助最上部的子电池首先吸收光的短波份额。在此，即光子首先流经第一子电池，接着流经第二子电池并且然后流经第三子电池。在等效电路图中，多结太阳能电池的各个太阳能电池串联连接，即具有最小电流的子电池进行限制地起作用。
也应指出，术语发射极和基极或者理解为在相应的子电池中的p型掺杂的层或者n型掺杂的层。
不言而喻地，半导体层通过如例如MOVPE这样的外延方法沉积在生长衬底上。对于第一子电池和第二子电池或者对于第一层和第二层列举的晶格常数范围基本上相当于GaAs衬底的或者Ge衬底的晶格常数。换言之，各个子电池的层的沉积至少可看作是相对于衬底粗略地晶格匹配的。当前，在此讨论子电池在制造过程期间的反向布置——所谓的IMM(反向变质的)电池堆叠，即首先制造具有较高的带隙的电池。
意外地，研究已经表明，沉积在GaAs或者Ge衬底上的子电池(只要所述子电池至少主要地或者完全地由由GaInAsP制成的化合物制成)与由由GaAs或者GaInAs制成的化合物制成的子电池相比具有更高的耐辐射性。
到目前为止，GaInAsP子电池的应用对于本领域技术人员而言显得不恰当，因为四元GaInAsP的沉积与GaAs或者GaInAs相比在技术上困难得多，此外，子电池的能带隙由于磷的添加而提高。另外，在技术上更困难指的是，反应器中的流必须由至少四个源来控制并调节。
然而，另外的研究已经表明，由于在反向变质的电池结构中的磷引起的带隙的提高可通过变质的缓冲区的在较高的铟含量方面的匹配来补偿。另一种可能性在于布置在GaInAsP子电池下方的一个(多个)子电池的一个(多个)能带隙的提高——例如通过对这些子电池也使用GaInAsP，通过所述提高可以获得用于多结太阳能电池的子电池的合适的带隙组合。
意外地，根据多结太阳能电池的准确成形也可以接受通过使用GaInAsP子电池引起的BOL有效作用系数的略微的降低，其方式是，基于一个(多个)GaInAsP子电池的较高的辐射稳定性实现EOL有效作用系数的显著提高。
不言而喻地，所说明的磷含量尤其与V族原子的总含量有关。相应地，所说明的铟含量与III族原子的总含量有关。也即，在Ga1-xInxAs1-YPY化合物中，铟含量为值X且磷含量为值Y，并且由此对于50％的磷含量得出0.5的Y值。
应指出，借助术语“半导体键合”尤其包括，在太阳能电池堆叠的两个任意的子电池之间也不构造直接的半导体键合，也即太阳能电池堆叠不由已被沉积在不同的衬底上并且后来通过半导体键合接合的两个子堆叠制造。
具有由GaInP制成的发射极并且具有空间电荷区和/或由GaInAs制成的基极的所谓的异质太阳能电池(Hetero-Solarzelle)不被认为是具有由具有至少元素GaInAsP的化合物制成的层的第二和/或第三子电池。然而，具有由GaInP制成的发射极并且具有空间电荷区和/或由GaInAsP制成的基极的异质太阳能电池被认为是具有由具有至少元素GaInAsP的化合物制成的层的第二和/或第三子电池。
在一种扩展方案中，所述第一层的晶格常数和/或所述第二层的晶格常数位于和之间的范围内。
在另一种扩展方案中，所述第一层的晶格常数和/或所述第二层的晶格常数位于和之间的范围内。
在一种实施方式中，所述第一层的晶格常数与所述第二层的晶格常数相差小于0.2％。优选地，所述第三层的晶格常数大于
在一种扩展方案中，所述两个层中的至少一个由具有至少元素GaInAsP的化合物制成并且优选具有小于35％的磷含量。
在一种实施方式中，两个层具有大于0.4μm或者大于0.8μm的厚度。
在另一种实施方式中，第二子电池或者第三子电池的所述两个层由具有至少元素GaInAsP的化合物制成并且具有大于1％的磷含量和大于1％的铟含量。
在一种扩展方案中，设有第四子电池，其中，所述第四子电池包括由具有至少元素GaInAs的化合物制成的第四层，并且所述第四层的能带隙比所述第三层的能带隙小至少0.15eV，并且所述第四层的厚度大于100nm，并且所述第四层构造为发射极的一部分和/或基极的一部分和/或位于发射极和基极之间的空间电荷区的一部分。
在另一种扩展方案中，第四层由具有至少元素GaInAsP的化合物制成并且具有大于1％和小于35％的磷含量和大于1％的铟含量。
在一种实施方式中，半导体镜构造在两个子电池之间，和/或，所述半导体镜布置在具有最低的能带隙的最下部的子电池下方。
在一种扩展方案中，所述第一子电池的第一层由具有至少元素AlGaInP的化合物制成。优选地，多结太阳能电池不具有Ge子电池。
在一种实施方式中，变质的第二缓冲区构造在第三子电池和第四子电池之间。
在另一种实施方式中，多结太阳能电池具有第五子电池。
在一种扩展方案中，多结太阳能电池具有至少四个子电池，其中，所述第三层由具有至少元素GaInAsP的化合物制成并且具有大于50％的磷含量，并且所述多结太阳能电池具有恰好一个变质的缓冲区，和/或，所述第四层的晶格常数与所述第三层的晶格常数相差小于0.3％。
附图说明
以下参照附图详细阐述本发明。在此，同类的部分标有相同的附图标记。所示出的实施方式是强烈地示意性的，即间距和横向延展和竖向延展不是按比例的，并且只要不另作说明，它们也不具有可推导出的相对于彼此的几何关系。在此示出：
图1a示出在第一替代方案中的根据本发明的作为三结太阳能电池的实施方式的横截面，
图1b示出在第二替代方案中的根据本发明的作为三结太阳能电池的实施方式的横截面，
图1c示出在第三替代方案中的根据本发明的作为三结太阳能电池的实施方式的横截面，
图2a示出在第一替代方案中的根据本发明的作为四结太阳能电池的实施方式的横截面，
图2b示出在第二替代方案中的根据本发明的作为四结太阳能电池的实施方式的横截面，
图2c示出在第三替代方案中的根据本发明的作为四结太阳能电池的实施方式的横截面。
图2d示出在第四替代方案中的根据本发明的作为四结太阳能电池的实施方式的横截面。
具体实施方式
图1a的图示出堆叠状的单片式多结太阳能电池MS的根据本发明的第一实施方式的横截面，以下将堆叠的各个太阳能电池称作子电池。多结太阳能电池MS具有第一子电池SC1，其中，第一子电池SC1由GaInP化合物制成并且具有整个堆叠的在1.75eV以上的最大带隙。在第一子电池SC1下方布置有由GaInAsP化合物制成的第二子电池SC2。第二子电池SC2比第一子电池SC1具有更小的带隙。在第二子电池SC2下方布置有由InGaAs化合物制成的第三子电池SC3，其中，第三子电池SC3具有最小的带隙。在此，第三子电池SC3具有小于1.25eV的能带隙。
在第二子电池SC2和第三子电池SC3之间构造有变质的缓冲区MP1。缓冲区MP1由多个未详细地示出的层制成，其中，在缓冲区MP1之内的晶格常数从缓冲区MP1的层到层朝第三子电池SC3方向通常减小。当第三子电池SC3的晶格常数与第二子电池SC2的晶格常数不一致时，缓冲区MP1的导入是有利的。
不言而喻地，在各个子电池SC1、SC2和SC3之间分别构造有隧道二极管(未示出)。
也不言而喻地，三个子电池SC1、SC2和SC3的每一个分别具有发射极和基极，其中，第二子电池SC2的厚度大于0.4μm地构造。
第一子电池SC1的晶格常数和第二子电池SC2的晶格常数彼此匹配或者相互一致。换言之，子电池SC1和SC2彼此“晶格匹配”。
通过第一子电池SC1的带隙大于第二子电池SC2的带隙且第二子电池SC2的带隙大于第三子电池SC3的带隙的方式，日照穿过第一子电池SC1的表面地发生。
图1b示出在第二替代方案中的根据本发明的作为三结太阳能电池的实施方式的横截面。以下仅仅阐述相对于与图1a相关联地示出的实施方式的区别。据此，第二子电池SC2由GaAs化合物制成且第三子电池SC3由GaInAsP化合物制成。
图1c示出在第三替代方案中的根据本发明的作为三结太阳能电池的实施方式的横截面。以下仅仅阐述相对于与图1a相关联地示出的实施方式的区别。据此，第二子电池SC2和第三子电池SC3分别由GaInAsP化合物制成。
图2a示出在第一替代方案中的根据本发明的作为四结太阳能电池的实施方式的横截面。以下仅仅阐述相对于与图1a相关联地示出的实施方式的区别。在第三子电池SC3下方构造有由GaInAs化合物制成的第四子电池SC4。第四子电池SC4的和第三子电池SC3的晶格常数彼此匹配或者相互一致。
第四子电池SC4比第三子电池SC3具有更小的带隙。
图2b示出在第二替代方案中的根据本发明的作为四结太阳能电池的实施方式的横截面。以下仅仅阐述相对于之前的实施方式的区别。第二子电池SC2由GaAs化合物制成并且第三子电池SC3从现在起由InGaAsP化合物制成。
图2c示出在第三替代方案中的根据本发明的作为四结太阳能电池的实施方式的横截面。以下仅仅阐述相对于在图2a中示出的实施方式的区别。第三子电池SC3由GaInAsP化合物制成。
图2d示出在第四替代方案中的根据本发明的作为四结太阳能电池的实施方式的横截面。以下仅仅阐述相对于在图2a中所示出的实施方式的区别。第三子电池SC3和第四子电池SC4分别由GaInAsP化合物制成。

Claims (13)

1.一种堆叠状的多结太阳能电池(MS)，其包括：
至少三个子电池(SC1，SC2，SC3)，其中，所述三个子电池(SC1，SC2，SC3)中的每一个具有发射极和基极，
其中，所述第一子电池(SC1)包括由具有至少元素GaInP的化合物制成的第一层，并且所述第一层的能带隙大于1.75eV，并且所述第一层的晶格常数位于563.5pm和567.5pm之间的范围内，
其中，所述第二子电池(SC2)包括由具有至少元素GaAs的化合物制成的第二层，并且所述第二层的能带隙位于1.35eV和1.70eV之间的范围内，并且所述第二层的晶格常数位于563.5pm和567.5pm之间的范围内，
其中，所述第三子电池(SC3)包括由具有至少元素GaInAs的化合物制成的第三层，并且所述第三层的能带隙小于1.25eV，并且所述第三层的晶格常数大于570.0pm，
其中，所述三个层的厚度分别大于100nm并且所述三个层构造为所述相应的三个子电池(SC1，SC2，SC3)的发射极的一部分和基极的一部分，和
变质的缓冲区(MP1)，其中，所述缓冲区(MP1)构造在所述第二子电池(SC2)和所述第三子电池(SC3)之间，并且所述缓冲区(MP1)具有至少三个层的序列，并且所述缓冲区的层的晶格常数大于所述第二层的晶格常数，并且所述缓冲区的层的晶格常数在所述序列的情况下朝所述第三子电池的方向从层到层地增加，
其中，在所述堆叠的分别两个子电池之间不构造有半导体键合且不布置有衬底，
其特征在于，
至少所述第二层或者所述第三层或者所述第二层和所述第三层由具有至少元素GaInAsP的化合物制成并且具有大于1％且小于35％的磷含量和大于1％的铟含量，其中，磷含量与V族原子的总含量有关，铟含量与III族原子的总含量有关。
2.根据权利要求1所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述第一层的晶格常数或者所述第二层的晶格常数或者所述第一层和所述第二层的晶格常数位于564.0pm和567.0pm之间的范围内。
3.根据以上权利要求中任一项所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述第一层的晶格常数或者所述第二层的晶格常数或者所述第一层和所述第二层的晶格常数位于564.5pm和566.5pm之间的范围内。
4.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述第一层的晶格常数与所述第二层的晶格常数相差小于0.2％。
5.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述第三层的晶格常数大于573.0pm。
6.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述多结太阳能电池(MS)具有第四子电池(SC4)，其中，所述第四子电池(SC4)包括由具有至少元素GaInAs的化合物制成的第四层，并且所述第四层的能带隙比所述第三层的能带隙小至少0.15eV，并且所述第四层的厚度大于100nm，并且所述第四层构造为发射极的一部分和基极的一部分。
7.根据权利要求6所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述第四层由具有至少元素GaInAsP的化合物制成并且具有大于1％和小于35％的磷含量和大于1％的铟含量。
8.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，半导体镜(HS1)构造在两个子电池之间，或所述半导体镜(HS1)布置在具有最低的能带隙的最下部的子电池下方。
9.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述第一子电池(SC1)的第一层由具有至少元素AlGaInP的化合物制成。
10.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述多结太阳能电池(MS)不具有Ge子电池。
11.根据权利要求6所述的堆叠状的多结太阳能电池(MS)，其特征在于，变质的另一缓冲区构造在所述第三子电池(SC3)和所述第四子电池(SC4)之间。
12.根据权利要求6所述的堆叠状的多结太阳能电池(MS)，其特征在于，设有第五子电池。
13.根据权利要求1或2所述的堆叠状的多结太阳能电池(MS)，其特征在于，所述多结太阳能电池(MS)具有至少四个子电池(SC1，SC2，SC3，SC4)，其中，第四子电池(SC4)包括由具有至少元素GaInAs的化合物制成的第四层，第四层的晶格常数与所述第三层的晶格常数相差小于0.3％。
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DE102018115222A1 (de) * 2018-06-25 2020-01-02 Otto-Von-Guericke-Universität Magdeburg Halbleiterschichtstapel und Verfahren zu dessen Herstellung
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Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017332A (en) 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
US4332974A (en) * 1979-06-28 1982-06-01 Chevron Research Company Multilayer photovoltaic cell
US6316715B1 (en) * 2000-03-15 2001-11-13 The Boeing Company Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US6660928B1 (en) * 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
US8067687B2 (en) 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
DE102005000767A1 (de) * 2005-01-04 2006-07-20 Rwe Space Solar Power Gmbh Monolithische Mehrfach-Solarzelle
EP2010276B1 (en) 2006-04-26 2014-01-22 Covidien LP Multi-stage microporation device
US20100229926A1 (en) 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Four Junction Inverted Metamorphic Multijunction Solar Cell with a Single Metamorphic Layer
GB2463905B (en) * 2008-09-29 2012-06-06 Jds Uniphase Corp Photovoltaic cell
CN102299159B (zh) * 2011-08-17 2013-11-20 中国科学院苏州纳米技术与纳米仿生研究所 GaInP/GaAs/InGaAsP/InGaAs四结级联太阳电池及其制备方法
CN103022058A (zh) * 2011-09-21 2013-04-03 索尼公司 多结太阳能电池、化合物半导体器件、光电转换元件和化合物半导体层叠层结构体
CN103151413B (zh) * 2013-03-22 2016-01-27 中国科学院苏州纳米技术与纳米仿生研究所 倒装四结太阳电池及其制备方法
CN103346191B (zh) * 2013-06-06 2017-01-25 中国科学院苏州纳米技术与纳米仿生研究所 GaInP/GaAs/InGaAsP/InGaAs四结级联太阳电池及其制备方法
ES2749215T3 (es) * 2014-03-13 2020-03-19 Azur Space Solar Power Gmbh Célula solar múltiple

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EP3185312B1 (de) 2023-02-08
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