CN105097895A - 薄膜晶体管、阵列基板及显示装置 - Google Patents

薄膜晶体管、阵列基板及显示装置 Download PDF

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CN105097895A
CN105097895A CN201510358095.9A CN201510358095A CN105097895A CN 105097895 A CN105097895 A CN 105097895A CN 201510358095 A CN201510358095 A CN 201510358095A CN 105097895 A CN105097895 A CN 105097895A
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film transistor
thin
broadside
raceway groove
underlay substrate
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CN105097895B (zh
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孔祥春
曹占锋
张伟
张斌
何晓龙
高锦成
姚琪
李正亮
徐传祥
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BOE Technology Group Co Ltd
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Abstract

本发明涉及液晶显示技术领域，公开了一种薄膜晶体管、阵列基板及显示装置。所述薄膜晶体管设置在一衬底基板上，在垂直于所述衬底基板表面的方向上，其沟道的宽边轮廓具有上下起伏呈曲线变化的曲线段，从而薄膜晶体管在所述衬底基板上的投影面积一定的情况下，能够增加其沟道的宽长比，使得薄膜晶体管的开启电流越大，改善薄膜晶体管的性能。同时，还能够在保证薄膜晶体管性能的同时，减小薄膜晶体管的尺寸，提高显示装置的分辨率，并保证显示品质。

Description

薄膜晶体管、阵列基板及显示装置
技术领域
本发明涉及液晶显示技术领域，特别是涉及一种薄膜晶体管、阵列基板及显示装置。
背景技术
薄膜晶体管液晶显示器(ThinFilmTransistor-LiquidCrystalDisplay，简称TFT-LCD)具有体积小，功耗低，无辐射等特点，近年来得到迅速发展，在当前的平板显示器市场中占据主导地位。阵列基板是薄膜晶体管-LCD的主体结构之一，包括横纵交叉分布的栅线和数据线，用于限定多个像素区域，每个像素区域对应一个薄膜晶体管，用于控制所述像素区域的显示。其中，薄膜晶体管沟道的宽长比(W/L)越大，开启电流越大，薄膜晶体管的性能越好。为了减小对开口率的影响，薄膜晶体管通常设置在栅线上。
随着显示技术的不断发展，用户对分辨率的要求越来越高，这势必需要更高的开口率和更小的薄膜晶体管尺寸，对于小尺寸的薄膜晶体管，其沟道很难实现较大的宽长比，降低了薄膜晶体管的性能。
发明内容
本发明提供一种薄膜晶体管，用以在投影面积一定的情况下，提高薄膜晶体管沟道的宽长比。
本发明还提供一种阵列基板及显示装置，采用上述的薄膜晶体管，用以在提高分辨率的同时，保证显示品质。
为解决上述技术问题，本发明实施例中提供一种薄膜晶体管，包括设置在衬底基板上的源电极、漏电极和有源层的图案，所述有源层位于源电极和漏电极之间的部分形成沟道，其中，在垂直于衬底基板表面的方向上，所述沟道的宽边轮廓具有上下起伏呈曲线变化的曲线段。
如上所述的薄膜晶体管，优选的是，整个所述沟道在宽边的延伸方向上，上下起伏呈曲面变化。
如上所述的薄膜晶体管，优选的是，所述沟道具有平行于衬底基板表面的部分。
如上所述的薄膜晶体管，优选的是，所述薄膜晶体管还包括设置在衬底基板上的凸起结构；
所述沟道的宽边具有沿着所述凸起结构表面轮廓延伸的曲线段。
如上所述的薄膜晶体管，优选的是，所述薄膜晶体管还包括设置在衬底基板上的凹槽结构；
所述沟道的宽边具有沿着所述凹槽结构表面轮廓延伸的曲线段。
本发明实施例中还提供一种阵列基板，包括如上所述的薄膜晶体管。
如上所述的阵列基板，优选的是，所述阵列基板包括设置在一衬底基板上、横纵交叉的栅线和数据线，用于限定子像素区域，每个子像素区域包括透射特定颜色光线的滤光层；
所述薄膜晶体管的沟道的宽边轮廓具有沿着所述滤光层表面轮廓延伸的曲线段。
如上所述的阵列基板，优选的是，相邻两个滤光层之间形成凹槽结构；
所述薄膜晶体管的沟道的宽边轮廓具有沿着所述凹槽结构表面轮廓延伸的曲线段。
如上所述的阵列基板，优选的是，所述薄膜晶体管设置在栅线和数据线的交叉处；
所述栅线和数据线的交叉处具有两组在列方向上相邻的第一滤光层和第二滤光层，其中一组第一滤光层和第二滤光层之间形成第一凹槽结构，另一组第一滤光层和第二滤光层之间形成第二凹槽结构；
所述薄膜晶体管的沟道的其中一个宽边轮廓具有沿着所述第一凹槽结构表面轮廓延伸的曲线段，另一个宽边轮廓具有沿着所述第二凹槽结构表面轮廓延伸的曲线段。
本发明实施例中还提供一种显示装置，包括如上所述的阵列基板。
本发明的上述技术方案的有益效果如下：
上述技术方案中，薄膜晶体管设置在一衬底基板上，在垂直于所述衬底基板表面的方向上，其沟道的宽边轮廓具有上下起伏呈曲线变化的曲线段，从而薄膜晶体管在所述衬底基板上的投影面积一定的情况下，能够增加其沟道的宽度，获得较大的宽长比，增大开启电流，改善了薄膜晶体管的性能，从而在保证显示品质的同时，还能够减小薄膜晶体管的尺寸，提高显示器件的分辨率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1表示本发明实施例中薄膜晶体管的结构示意图一；
图2表示图1沿A-A方向的剖视图；
图3表示图1沿B-B方向的剖视图；
图4表示本发明实施例中薄膜晶体管的结构示意图二；
图5表示图1沿C-C方向的剖视图；
图6表示图1沿D-D方向的剖视图；
图7表示本发明实施例中薄膜晶体管的局部剖视图；
图8本发明实施例中薄膜晶体管阵列基板的结构示意图；
图9表示图8沿E-E方向的剖视图。
具体实施方式
随着薄膜晶体管液晶显示器的分辨率越来越高，势必需要更高的开口率和更小的薄膜晶体管尺寸。对于小尺寸的薄膜晶体管，其沟道很难实现较大的宽长比，降低了薄膜晶体管的性能。
为了解决上述技术问题，本发明提供一种薄膜晶体管，其包括设置在衬底基板上的源电极、漏电极和有源层的图案，所述有源层位于源电极和漏电极之间的部分形成沟道。在垂直于衬底基板表面的方向上，设置所述沟道的宽边轮廓具有上下起伏呈曲线变化的曲线段，从而薄膜晶体管在所述衬底基板上投影面积一定的情况下，能够增加其沟道的宽度，获得较大的宽长比，增大开启电流，改善了薄膜晶体管的性能。
通常，薄膜晶体管的源电极和漏电极结构对称。其沟道的宽度是指有源层和源电极交叠的区域靠近漏电极的边缘轮廓(宽边)的长度，或有源层和漏电极交叠的区域靠近源电极的边缘轮廓的长度，而薄膜晶体管沟道的长度是指有源层位于源电极和漏电极之间的部分在垂直于沟道的宽边延伸方向上的长度。
下面将结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
图1-图3所示为本发明实施例中薄膜晶体管的一个结构示意图；
图4-图6所示为本发明实施例中薄膜晶体管的另一个结构示意图。
图中的W表示薄膜晶体管沟道的宽度，L表示薄膜晶体管沟道的长度。
结合图1-图6所示，本发明实施例中提供一种薄膜晶体管，其包括设置在衬底基板10上的源电极1、漏电极2和有源层3的图案。有源层3位于源电极1和漏电极2之间的部分形成沟道。在垂直于衬底基板10表面的方向上，所述沟道的宽边轮廓具有上下起伏呈曲线变化的曲线段，从而薄膜晶体管在衬底基板10上投影面积一定的情况下，能够增加沟道的宽边长度，获得较大的宽长比，从而提供更大的开启电流，改善薄膜晶体管的性能。
当薄膜晶体管应用到显示器件中时，为了不影响正常的显示，衬底基板10采用透明基板，如：玻璃基板、石英基板或有机树脂基板。
上述技术方案中，设置在衬底基板上的薄膜晶体管，在垂直于所述衬底基板表面的方向上，其沟道的宽边轮廓上下起伏呈曲线变化，即使薄膜晶体管的尺寸较小，也能够获得较大的沟道宽长比，保证薄膜晶体管的性能，提高产品的质量。当薄膜晶体管应用到显示器件中时，在提高显示器件分辨率的同时，还能够保证显示品质。
本发明实施例中的“上”“下”是指：在垂直于衬底基板表面方向上、远离衬底基板的方向为向“上”，而在垂直于衬底基板表面方向上、靠近衬底基板的方向为向“下”。
优选地，设置薄膜晶体管的整个沟道在宽边的延伸方向上，上下起伏呈曲面变化，进一步增加沟道的宽度。
进一步地，设置薄膜晶体管的沟道具有平行于衬底基板表面的部分，以减小沟道的长度，获得更大的沟道宽长比，改善薄膜晶体管的性能。
本发明实施例中通过设置凸起结构、凹槽结构或者两者相结合的方式来使得沟道的宽边轮廓具有上下起伏呈曲线变化的曲线段。
在一个具体的实施方式中，结合图1-图3所示，薄膜晶体管包括设置在衬底基板10上的凸起结构4，薄膜晶体管沟道的宽边具有沿着凸起结构4表面轮廓延伸的曲线段。
优选地，薄膜晶体管的整个沟道均设置在凸起结构4上，整个沟道在宽边的延伸方向上，上下起伏呈曲面变化。
为了增加沟道的宽长比，在实际工艺过程中，本领域技术人员很容易想到，设置薄膜晶体管的整个沟道在垂直于宽边的方向上为平坦结构，不存在上下起伏呈曲面变化，以获得较小的沟道长度。该实施方式中具体设置凸起结构4的表面具有平行于衬底基板10表面的部分，则设置在其上的沟道也具有平行于衬底基板10表面的部分，以减小凸起结构4的设置对沟道长度的影响，获得较大的宽长比。
在另一个具体的实施方式中，结合图4-图6所示，薄膜晶体管包括设置在衬底基板10上的凹槽结构30，薄膜晶体管沟道的宽边具有沿着凹槽结构30表面轮廓延伸的曲线段。其中，凹槽结构30可以通过以下方式形成：
在衬底基板10上设置两个凸起结构4，在两个凸起结构4之间形成凹槽结构30。
优选地，薄膜晶体管的整个沟道均设置在凹槽结构30上，整个沟道在宽边的延伸方向上，上下起伏呈曲面变化。
为了增加沟道的宽长比，在实际工艺过程中，本领域技术人员很容易想到，设置薄膜晶体管的整个沟道在垂直于宽边的方向上为平坦结构，不存在上下起伏呈曲面变化，以获得较小的沟道长度。该实施方式中具体设置凹槽结构30的槽底具有平行于衬底基板10表面的部分，则设置在其上的沟道也具有平行于衬底基板10表面的部分，以减小凹槽结构30的设置对沟道长度的影响，获得较大的宽长比。
为了不影响薄膜晶体管的性能，凸起结构4的材料为绝缘层，如氮化硅、氧化硅或氮氧化硅，可以为单层或多层结构。
作为一个优选的方式，设置薄膜晶体管包括多个(如两个)凸起结构4，薄膜晶体管沟道的宽边具有沿着所述多个凸起结构4表面轮廓延伸的曲线段，如图7所示，图中的W表示薄膜晶体管沟道的宽度。由于在相邻凸起结构4之间还形成有凹槽结构30，该优选方式中，相当于采用了凸起结构4和凹槽结构30结合的方式，来使得薄膜晶体管沟道的宽边轮廓上下起伏呈曲线变化。同时，还可以设置薄膜晶体管的整个沟道均位于凸起结构4以及凸起结构4之间的凹槽结构30上，整个沟道在宽边的延伸方向上，上下起伏呈曲面变化。而且凸起结构4的表面具有平行于衬底基板10表面的部分，凹槽结构30的槽底也具有平行于衬底基板10表面的部分，有利于获得较大的沟道宽长比。
在实际工艺中，也可以不单独设置凸起结构或凹槽结构，而是对有源层3进行构图工艺，在其表面形成至少一个凸起图案，使得沟道的宽边轮廓上下起伏呈曲线变化，从而增加沟道的宽度。
结合图4-图6所示，以底栅型薄膜晶体管为例，本发明实施例中的薄膜晶体管具体包括：
设置在衬底基板10上、呈矩阵分布的四个凸起结构4，在列方向上相邻两个凸起结构4之间形成凹槽结构30；
设置在列方向上相邻的两个凸起结构4上的栅电极5；
覆盖栅电极5的栅绝缘层11；
设置在栅绝缘层11上的有源层3，搭接在有源层3相对两端的源电极1和漏电极2，有源层3位于源电极1和漏电极2之间的部分形成沟道，所述沟道的两个宽边轮廓均具有沿着凹槽结构30表面轮廓延伸的曲线段。
需要说明的是，附图1-7中只示意了沟道靠近漏电极2侧的宽边处的剖视图，靠近源电极1侧的宽边处的剖视图，与靠近漏电极2侧的宽边处的剖视图一样，不再重复示意。
本发明实施例中还提供一种阵列基板，包括本发明实施例中的薄膜晶体管，从而即使薄膜晶体管的尺寸较小，也能够提供足够大的沟道宽长比，保证薄膜晶体管的性能，提高产品的质量。
对于薄膜晶体管液晶显示器件，所述阵列基板包括设置在一衬底基板上、横纵交叉的栅线和数据线，用于限定子像素区域。
采用COA(ColorFilterOnArray，滤光层设置在阵列基板上)技术的薄膜晶体管阵列基板，其上的每个子像素区域还包括透射特定颜色光线的滤光层，克服了单独设置彩膜基板(其上设置滤光层)时，阵列基板和彩膜基板对位存在偏差的问题，提高了开口率。
对于COA阵列基板，本发明实施例中利用滤光层来形成凸起结构，使得薄膜晶体管的沟道的宽边轮廓具有沿着所述滤光层表面轮廓延伸的曲线段，或利用相邻子像素区域的滤光层来形成凹槽结构，使得薄膜晶体管的沟道的宽边轮廓具有沿着所述凹槽结构表面轮廓延伸的曲线段，从而在垂直衬底基板表面的方向上，沟道的宽边轮廓具有上下起伏呈曲线变化的曲线段，能够增加沟道的宽边长度，提供更大的开启电流，改善薄膜晶体管的性能，提高显示器件的分辨率，并保证显示品质。
优选地，本发明实施例中的薄膜晶体管设置在栅线和数据线的交叉处，以减小对开口率的影响。
在所述栅线和数据线的交叉处具有两组在列方向上相邻的第一滤光层和第二滤光层，其中一组第一滤光层和第二滤光层之间形成第一凹槽结构，另一组第一滤光层和第二滤光层之间形成第二凹槽结构。
进一步地，设置薄膜晶体管的沟道的其中一个宽边轮廓具有沿着所述第一凹槽结构表面轮廓延伸的曲线段，另一个宽边轮廓具有沿着所述第二凹槽结构表面轮廓延伸的曲线段，从而不需要增加结构，就可以利用阵列基板上现有的结构来增加薄膜晶体管沟道的宽度，实现较大的沟道宽长比，改善薄膜晶体管的性能，提高产品的质量。
结合图8和9所示，以底栅型薄膜晶体管阵列基板为例，本发明实施例中的阵列基板具体包括：
设置在衬底基板10上的栅线100和数据线200，限定多个子像素区域，衬底基板10为透明基板，如：玻璃基板、石英基板或有机树脂基板；
每个子像素区域包括：
滤光层，包括红色滤光层40、绿色滤光层41和蓝色滤光层42，相邻两个红色滤光层40之间形成第一凹槽结构，相邻两个绿色滤光层41之间形成第二凹槽结构31，相邻两个蓝色滤光层41之间形成第三凹槽结构；
薄膜晶体管，设置在栅线100和数据线200的交叉处，每个薄膜晶体管包括：
栅电极5，设置在相邻的四个滤光层上，所述四个滤光层包括在列方向上相邻的两个红色滤光层40，以及在列方向上相邻的两个绿色滤光层41，或在列方向上相邻的两个绿色滤光层41，以及列方向上相邻的两个蓝色滤光层42；
覆盖栅电极5的栅绝缘层11，如氮化硅、氧化硅或氮氧化硅；
设置在栅绝缘层11上的有源层3，搭接在有源层3相对两端的源电极1和漏电极2，有源层3位于源电极1和漏电极2之间的部分形成沟道，所述沟道的一个宽边轮廓具有沿着第一凹槽结构表面轮廓延伸的曲线段，另一个宽边轮廓具有沿着第二凹槽结构31表面轮廓延伸的曲线段(如图9所示)，或
所述沟道的一个宽边轮廓具有沿着第二凹槽结构表面轮廓延伸的曲线段，另一个宽边轮廓具有沿着第三凹槽结构表面轮廓延伸的曲线段；
覆盖薄膜晶体管的钝化层12；
每个子像素区域还包括：
位于钝化层12上的板状公共电极6；
位于公共电极6上的狭缝像素电极7，。
公共电极6和像素电极7为透明导电层，如氧化铟锌或氧化铟锡。在公共电极6和像素电极7之间设置有层间绝缘层13，像素电极7通过贯穿钝化层12和层间绝缘层13的过孔，与薄膜晶体管的漏电极2电性接触。
其中，薄膜晶体管的栅电极5与栅线100电性连接，源电极1与数据线200电性连接。具体可以设置栅电极5与栅线100为一体结构，通过对同一栅金属层的构图工艺形成，源电极1和漏电极2与数据线200为一体结构，通过对同一源漏金属层的构图工艺形成。栅金属层和源漏金属层的材料为Cu，Al，Ag，Mo，Cr，Nd，Ni，Mn，Ti，Ta，W等金属以及这些金属的合金，可以为单层结构或者多层结构，多层结构比如Cu\Mo,Ti\Cu\Ti，Mo\Al\Mo等。薄膜晶体管的有源层3的材料可以为硅半导体也可以为金属氧化物半导体。
本发明实施例中还提供一种显示装置，包括上述的阵列基板，在提高产品分辨率的同时，还能够保证薄膜晶体管的性能，提高显示品质。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本发明的保护范围。

Claims (10)

1.一种薄膜晶体管，包括设置在衬底基板上的源电极、漏电极和有源层的图案，所述有源层位于源电极和漏电极之间的部分形成沟道，其特征在于，在垂直于衬底基板表面的方向上，所述沟道的宽边轮廓具有上下起伏呈曲线变化的曲线段。
2.根据权利要求1所述的薄膜晶体管，其特征在于，整个所述沟道在宽边的延伸方向上，上下起伏呈曲面变化。
3.根据权利要求1所述的薄膜晶体管，其特征在于，所述沟道具有平行于衬底基板表面的部分。
4.根据权利要求1-3任一项所述的薄膜晶体管，其特征在于，所述薄膜晶体管还包括设置在衬底基板上的凸起结构；
所述沟道的宽边具有沿着所述凸起结构表面轮廓延伸的曲线段。
5.根据权利要求1-3任一项所述的薄膜晶体管，其特征在于，所述薄膜晶体管还包括设置在衬底基板上的凹槽结构；
所述沟道的宽边具有沿着所述凹槽结构表面轮廓延伸的曲线段。
6.一种阵列基板，其特征在于，包括权利要求1-5任一项所述的薄膜晶体管。
7.根据权利要求6所述的阵列基板，其特征在于，所述阵列基板包括设置在一衬底基板上、横纵交叉的栅线和数据线，用于限定子像素区域，每个子像素区域包括透射特定颜色光线的滤光层；
所述薄膜晶体管的沟道的宽边轮廓具有沿着所述滤光层表面轮廓延伸的曲线段。
8.根据权利要求7所述的阵列基板，其特征在于，相邻两个滤光层之间形成凹槽结构；
所述薄膜晶体管的沟道的宽边轮廓具有沿着所述凹槽结构表面轮廓延伸的曲线段。
9.根据权利要求7所述的阵列基板，其特征在于，所述薄膜晶体管设置在栅线和数据线的交叉处；
所述栅线和数据线的交叉处具有两组在列方向上相邻的第一滤光层和第二滤光层，其中一组第一滤光层和第二滤光层之间形成第一凹槽结构，另一组第一滤光层和第二滤光层之间形成第二凹槽结构；
所述薄膜晶体管的沟道的其中一个宽边轮廓具有沿着所述第一凹槽结构表面轮廓延伸的曲线段，另一个宽边轮廓具有沿着所述第二凹槽结构表面轮廓延伸的曲线段。
10.一种显示装置，其特征在于，包括权利要求6-9任一项所述的阵列基板。
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