CN105097518A - Fin type field effect transistor formation method - Google Patents
Fin type field effect transistor formation method Download PDFInfo
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- CN105097518A CN105097518A CN201410181377.1A CN201410181377A CN105097518A CN 105097518 A CN105097518 A CN 105097518A CN 201410181377 A CN201410181377 A CN 201410181377A CN 105097518 A CN105097518 A CN 105097518A
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Abstract
The invention provides a fin type field effect transistor formation method comprising the steps that a substrate is provided, and multiple discrete fin parts are formed on the surface of the substrate; a shielding layer covering the surface of the fin parts is formed by adopting the deposition technology, and reactant gases of the deposition technology include a main source gas and an oxygen source gas, wherein the main source gas is gas including fin part material atoms; a photoresist film is formed on the surface of the shielding layer; exposure processing and development processing are performed on the photoresist film so that a patterned photoresist layer is formed; the patterned photoresist layer acts as a mask film, and the doping technology is performed on part of the fin parts; the patterned photoresist layer is removed; and the shielding layer is removed. In the technology process of formation of the shielding layer, consumption of the fin part material is low and even no fin part material is consumed so that the characteristic dimension of the fin parts is maintained to be unchanged. Besides, damage to the fin part material in the process of development processing can be prevented by the shielding layer so that the formed fin type field effect transistor is enabled to possess excellent electrical performance.
Description
Technical field
The present invention relates to semiconductor fabrication techniques field, particularly the formation method of fin field effect pipe.
Background technology
Along with the development of semiconductor process techniques, the development trend that semiconductor technology node follows Moore's Law constantly reduces.In order to adapt to the reduction of process node, have to constantly to shorten the channel length of MOSFET field effect transistor.The shortening of channel length has the tube core density increasing chip, increases the benefits such as the switching speed of MOSFET field effect transistor.
But, along with the shortening of device channel length, distance between device source electrode and drain electrode also shortens thereupon, so grid is deteriorated to the control ability of raceway groove, the difficulty of grid voltage pinch off (pinchoff) raceway groove is also increasing, make sub-threshold leakage (subthresholdleakage) phenomenon, namely so-called short-channel effect (SCE:short-channeleffects) more easily occurs.
Therefore, in order to better adapt to the scaled requirement of device size, semiconductor technology starts from planar MOSFET transistor to the transistor transient of three-dimensional with higher effect gradually, as fin field effect pipe (FinFET).In FinFET, grid at least can control from both sides to ultra-thin body (fin), have the grid more much better than than planar MOSFET devices to the control ability of raceway groove, can be good at suppressing short-channel effect; And FinFET is relative to other devices, there is the compatibility of better existing production of integrated circuits technology.
But the electric property of the fin field effect pipe that prior art is formed has much room for improvement.
Summary of the invention
The problem that the present invention solves is the damage that the technique reducing formation screen causes fin, while the technique avoiding the formation of patterned photoresist layer causes damage to fin, reduces the consumption of fin material further.
For solving the problem, the invention provides a kind of formation method of fin field effect pipe, comprising: provide substrate, described substrate surface is formed with some discrete fins; Adopt depositing operation to form the screen being covered in described fin portion surface, and the reacting gas of described depositing operation comprises main source gas and oxygen source gas, wherein, main source gas is the gas containing fin material atom; Photoresist film is formed on described screen surface; Exposure-processed and development treatment are carried out to described photoresist film, forms patterned photoresist layer; With described patterned photoresist layer for mask, doping process is carried out to part fin; Remove described patterned photoresist layer; Remove described screen.
Optionally, described depositing operation compares depositing operation for height is vertical wide.
Optionally, described main source gas is silicon source gas, and described oxygen source gas is O
2.
Optionally, it is the high vertical wide chemical vapor deposition method that compares than depositing operation that described height is indulged wide, and the high vertical wide technological parameter than chemical vapor deposition method is: silicon source gas flow is 20sccm to 2000sccm, oxygen source gas flow is 10sccm to 1000sccm, reaction chamber pressure is that 1 millitorr to 50 holds in the palm, and reaction chamber temperature is 450 degree to 800 degree.
Optionally, described depositing operation is atom layer deposition process.
Optionally, described main source gas is silicon source gas, and described oxygen source gas is O
2.
Optionally, the technological parameter of described atom layer deposition process is: silicon source gas flow is 20sccm to 2000sccm, and oxygen source gas flow is 10sccm to 1000sccm, and reaction chamber pressure is that 1 millitorr to 50 holds in the palm, reaction chamber temperature is 0 degree to 120 degree, and radio-frequency power is 1000 watts to 3000 watts.
Optionally, after the described screen of formation, also step is comprised: annealing in process is carried out to described screen.
Optionally, the technological parameter of described annealing in process is: annealing temperature is 550 degree to 1150 degree, and anneal duration is 20min to 150min, and annealing in process is at N
2or carry out under He atmosphere.
Optionally, the material of described screen is silica.
Optionally, the technique adopting dry etching, wet etching or dry etching and wet etching to combine removes described screen.
Optionally, the etch liquids of described wet-etching technology is hydrofluoric acid solution; Perform described dry etch process by SiCoNi etching system, the etching gas of dry etch process comprises NH
3and HF.
Optionally, the developer solution of described development treatment is the developer solution containing Tetramethylammonium hydroxide.
Optionally, the forming step of fin comprises: provide initial substrate; Patterned sacrifice layer is formed in described initial substrate surface; The side wall layer of adjacent sacrifice layer is formed in described initial substrate surface; Remove described sacrifice layer; With described side wall layer for mask etching initial substrate forms fin, the initial substrate after etching is substrate.
Optionally, the substrate surface between adjacent fin is formed with separator, and separator top surface is lower than fin top surface, and screen is positioned at insulation surface.
Optionally, fluid chemistry gas-phase deposition is adopted to form described separator.
Optionally, described doping process is ion implantation.
Optionally, the injection ion of described ion implantation is N-type ion or P type ion.
Compared with prior art, technical scheme of the present invention has the following advantages:
In the embodiment of the present invention, adopt depositing operation to form the screen being covered in fin portion surface, and the reacting gas of depositing operation comprises main source gas and oxygen source gas, wherein, main source gas is the gas containing fin material atom; When adopting described depositing operation to form screen, due to the atom containing fin material in the gas of main source, react between the gas of oxygen source gas main and main source, the probability of effective minimizing oxygen source gas and the materials from oxidizing reaction of fin, reduce the consumption of fin material, after making to form screen, fin still maintains good characteristic size, and the fin field effect pipe therefore formed has good electric property.
Meanwhile, after formation screen, described screen can prevent development treatment from causing damage to fin, causes corrosion after avoiding developer solution to contact with fin portion surface to fin, thus improves the electric property of the fin field effect pipe formed further.
Further, embodiment of the present invention employing height is vertical wide forms described screen than depositing operation, and the screen of formation has larger hardness, effectively can stop that developer solution is through described screen, effectively prevent developer solution to the harmful effect of fin further; And, adopt the high vertical wide shielding thickness consistency than depositing operation formation good, in the corner that fin and separator have a common boundary, screen still has thicker thickness, prevent developer solution from entering the fin portion surface of corner, therefore, it is possible to effectively prevent the fin of corner from sustaining damage.
Further, the embodiment of the present invention adopts atom layer deposition process to form described screen, due to the depositing temperature of atom layer deposition process lower (temperature of depositing operation is 0 degree to 120 degree), the oxidation rate of oxygen is very little at low ambient temperatures, therefore, the ability of further reduction dioxygen oxidation fin material, thus the consumption of further fin material, improve the electric property of fin field effect pipe further.
Further, in the embodiment of the present invention after employing atom layer deposition process forms screen, annealing in process is carried out to described screen, improve compactness and the hardness of screen, the ability that further reduction developer solution contacts with fin portion surface through described screen, thus the further damage reducing developer solution and fin is caused, improve the electric property of fin field effect pipe further.
Accompanying drawing explanation
The cross-sectional view of the fin field effect pipe forming process that Fig. 1 to Figure 15 provides for one embodiment of the invention.
Embodiment
From background technology, the performance of the fin field effect pipe that prior art is formed has much room for improvement.
Formation method for fin field effect pipe is carried out research and is found, substrate is provided, after substrate is formed some discrete fins, usually need to carry out ion implantation to fin, the electric property improving fin field effect pipe is adulterated to fin, as threshold voltage (Vt), saturation current (Idsat) etc.
The processing step that fin adulterates is comprised: form the initial lithographic glue-line being covered in described substrate and fin portion surface; Exposure-processed is carried out to described initial lithographic glue-line; Adopt developer solution to clean the initial lithographic glue-line after exposure, form patterned photoresist layer, expose part fin and substrate surface; With described patterned photoresist layer for mask, ion implantation is carried out to the fin come out.
But the fin field effect pipe electric property adopting said method to be formed is low.Formation method for fin field effect pipe studies discovery further, when adopting developer solution to clean the initial lithographic glue-line after exposure, developer solution also can affect to fin, such as, when developer solution is the developer solution containing Tetramethylammonium hydroxide (TMAH), the material of fin is identical with the material of substrate, for Si, Ge, SiGe or GaAs, described developer solution can cause consumption to a certain degree to the material of fin, causes the characteristic size of fin (CD) to change; And along with semiconductor towards trend toward miniaturization send out turn, the characteristic size of fin is more and more less, and the harmful effect of developer solution to fin is more and more obvious.After fin material is consumed and changes with characteristic size, the electric property of the fin field effect pipe of formation obviously can be caused low.
In order to avoid the harmful effect that developer solution causes fin, propose to form the method for protective layer in fin portion surface, that avoids to avoid developer solution and fin directly contacts.Boiler tube thermal oxidation technology is adopted to form described protective layer, when the material of fin is silicon, the material of described protective layer is silica, and the technique forming protective layer can consume the material of a certain amount of fin, and the fin material of the described consumption when the characteristic size of fin is larger is almost negligible; But; along with the development trend that semiconductor device is more and more less; the characteristic size of fin is more and more less; formed after protective layer consumes the material of fin, the feature size variations of fin more obvious, the impact that the technique of formation protective layer causes fin is increasing; therefore; need a kind of formation method that new fin field effect pipe is provided badly, at formation protective layer with while protect fin from developer solution impact, reduce and even eliminate the harmful effect that fin is caused of formation protective layer.
For this reason, the invention provides a kind of formation method of fin field effect pipe, adopt depositing operation to form the screen being covered in described fin portion surface, and the reacting gas of described depositing operation comprises main source gas and oxygen source gas, wherein, main source gas is the gas containing fin material atom.The present invention effectively reduces even to eliminate and forms screen to the consumption of fin material, makes fin after formation screen still maintain good characteristic, thus improves the electric property of fin field effect pipe formed.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
The cross-sectional view of the fin field effect pipe forming process that Fig. 1 to Figure 15 provides for the embodiment of the present invention.
Please refer to Fig. 1, initial substrate 100 is provided.
Described initial substrate 100 provides workbench for follow-up formation fin field effect pipe.The material of described initial substrate 100 is silicon, germanium, SiGe, GaAs, carborundum or isolate supports.
In the present embodiment, the material of described initial substrate 100 is silicon.
Please continue to refer to Fig. 1, form some discrete sacrifice layers 101 on described initial substrate 100 surface.
Described sacrifice layer 101 is photoresist layer (PR:PhotoResist) or advanced pattern film (APF:AdvancedPatterningFilm).
In the present embodiment, described sacrifice layer 101 is APF, and the material of described APF is amorphous carbon (AmorphousCarbon).
General, sacrifice layer 101 be through exposure imaging and etching technics after formed, the width of the sacrifice layer 101 of formation by the restriction of photoetching exposure imaging process conditions, therefore, the wider width of sacrifice layer 101, the width of described sacrifice layer 101 is 500 dust to 2000 dusts.
Please refer to Fig. 2, form the side wall film 102 being covered in described initial substrate 100 surface and sacrifice layer 101 surface.
The material of described side wall film 102 is silicon nitride or silicon oxynitride, adopts chemical vapour deposition (CVD), physical vapour deposition (PVD) or atom layer deposition process to form described side wall film 102.
Please refer to Fig. 3, return the described side wall film 102 of etching, form the side wall layer 103 of adjacent sacrifice layer 101 sidewall.
Described side wall layer 103 forms the mask of fin as subsequent etching initial substrate 100.
Dry etch process is adopted to etch described side wall film 102.
Be through deposition due to side wall layer 103 and return that etching technics formed, it is very thin that the thickness of side wall film 102 can deposit, and therefore, the width of the side wall layer 103 formed after returning etching is significantly less than the width of sacrifice layer 101; Follow-up when forming fin with side wall layer 103 for mask etching initial substrate 100, the fin of formation has less characteristic size.
Please refer to Fig. 4, remove described sacrifice layer 101 (please refer to Fig. 3); With described side wall layer 103 for mask, etch described initial substrate 100 (please refer to Fig. 3), form some discrete fins 104, the initial substrate 100 after etching forms substrate 105.
The technique removing sacrifice layer 201 is dry etching.As an embodiment, the concrete technology parameter that dry etching removes sacrifice layer 101 is: etching gas is HBr and O
2, HBr flow is 100sccm to 500sccm, O
2flow is 1sccm to 50sccm, and reaction chamber pressure is 1 millitorr to 50 millitorr, and the high-frequency radio frequency frequency of etching is 100 watts to 500 watts, and low frequency radio frequency frequency is 0 watt to 200 watts.
Dry etch process is adopted to etch described initial substrate 101.As an embodiment, the concrete technology parameter that dry etch process etches described initial substrate 100 is: etching gas is Cl
2and HBr, reaction chamber pressure is 1 millitorr to 50 millitorr, and etching HFRF power is 150 watts to 500 watts, and etching low frequency RF power is 0 watt to 150 watts, and HBr flow is 100sccm to 1000sccm, Cl
2flow is 10sccm to 500sccm.
Please refer to Fig. 5, remove described side wall layer 103 (please refer to Fig. 4).
Wet-etching technology is adopted to remove described side wall layer 103.As an embodiment, the etch liquids that described wet-etching technology adopts is hot phosphoric acid solution, and wherein, phosphoric acid quality percentage is 65% to 85%, and solution temperature is 80 degree to 200 degree.
In the present embodiment, adopt double-pattern method to form described fin 104, make fin 104 have less characteristic size; In other embodiments of the present invention, the forming step of fin also can be: provide initial substrate; Patterned mask layer is formed in described initial substrate surface; With described patterned mask layer for mask, etch described initial substrate and form fin, form the substrate that surface is formed with fin.
Please refer to Fig. 6, substrate 105 surface between adjacent fin 104 forms separator 106, and the top surface of described separator 106 is lower than fin 104 top surface.
Described separator 106 is for the follow-up isolation structure as fin field effect pipe, and the fin 104 of isolation adjacent area, prevents unnecessary electrical connection; The material of described separator 106 is silica or silicon oxynitride.
As an embodiment, the processing step forming described separator 106 comprises: form barrier film on described substrate 105 surface and fin 104 surface, and the top surface of described barrier film is higher than fin 104 top surface; Return the described barrier film of etching and form separator 106, and separator 106 top surface is lower than fin 104 top surface.
The present embodiment adopts fluid chemistry gas-phase deposition to form described barrier film, makes the filling effect of the corner of separator 106 between substrate 105 and fin 104 formed good.
Because fin 104 is formed via etching technics, fin 104 sidewall may be subject to the damage that etching technics causes, in order to make separator 106 and fin 104 sidewall contact tight, in the present embodiment, before formation separator 106, can also form liner oxidation layer 107 between fin 104 and separator 106, described liner oxidation layer 107 is also positioned at substrate 105 surface.The formation separator 106 that exists for of described liner oxidation layer 107 provides good interfacial state.As an embodiment, adopt thermal oxidation technology to form described liner oxidation layer 107, the material of described liner oxidation layer 107 is silica.
Please refer to Fig. 7, adopt depositing operation to form the screen 108 being covered in described fin 104 surface, and the reacting gas of described depositing operation comprises main source gas and oxygen source gas, wherein, main source gas is the gas containing fin 104 material atom.
Acting as of described screen 108: the effect playing protection fin 104; prevent fin 104 from sustaining damage in the process of the patterned photoresist layer of follow-up formation; keep the characteristic size of fin 104 constant, thus improve the electric property of the fin field effect pipe formed.Follow-up when forming patterned photoresist layer, if directly form patterned photoresist layer on fin 104 surface, the developer solution of photoresist developing process can cause corrosion to the material of fin 104, causes the characteristic size of fin 104 to change, affects the electric property of fin field effect pipe.
As the above analysis, same, form the technique of screen 108 and also should have no adverse effects on fin 104 or affect minimum, avoid or reduce the consumption that the technique that forms screen 108 causes fin 104 material; Further, require that the technique of follow-up removal screen 108 is simple, and the technique removing screen 108 on the material of fin 104 without impact.The present embodiment adopts depositing operation to form described screen 108, and depositing operation provides the gas containing fin material atom as main source gas, can reduce the amount of oxygen source gas oxidation fin 104 material greatly, reduce the consumption of fin 104 material.
In the present embodiment, the material of fin 104 is silicon, then described main source gas is silicon source gas, and as an embodiment, described silicon source gas is SiH
4or SiH
2cl
2, described oxygen source gas is O
2.
In the present embodiment, adopt high vertical wide than (HARP:HighAspectRatioProcess) depositing operation, at described separator 106 surface and fin 104 surface deposition screen 108.The high vertical wide benefit forming described screen 108 than depositing operation is adopted to be: first, adopt high vertical wide when forming screen 108 than depositing operation, described height is indulged the wide reacting gas than depositing operation and is comprised silicon source, therefore the consumption of fin 104 material is considerably reduced, therefore, after formation screen 108, the amount that the material of fin 104 is consumed is little; Secondly, follow-up when not injuring fin 104, easily remove screen 108; Again, the hardness of the screen 104 of formation is comparatively large, and can be good at preventing follow-up developer solution from touching fin 104 surface by screen 108, effective protection fin 104 does not sustain damage; Finally; adopt high vertical wide than depositing operation time; the screen 108 formed has good consistency of thickness; that is; corner between fin 104 and separator 106, is still formed with very complete screen 108, prevents screen 108 thickness of described corner from crossing thin or not forming screen 108; thus the protection preventing fin 104 surface of described corner from can not get, make protection that fin 104 is subject to more comprehensively.
It is high vertical wide than chemical vapor deposition method than depositing operation that described height is indulged wide, and described height is indulged the wide reacting gas than chemical vapor deposition method and comprised silicon source gas and oxygen source gas.
As an embodiment, described height indulges the wide technological parameter than chemical vapor deposition method: silicon source gas flow is 20sccm to 2000sccm, oxygen source gas flow is 10sccm to 1000sccm, and reaction chamber pressure is that 1 millitorr to 50 holds in the palm, and reaction chamber temperature is 450 degree to 800 degree.
In an alternative embodiment of the invention, for reducing the technique of formation screen 108 further to the consumption of fin 104 material, adopt ald (ALD, AtomicLayerDeposition) technique forms described screen 108, the reacting gas of described atom layer deposition process comprises silicon source gas and oxygen source gas, silicon source gas is main source gas, and as an embodiment, described silicon source gas is SiH
4or SiH
2cl
2, oxygen source gas is O
2.
The benefit adopting atom layer deposition process to form described screen 108 is: because atom layer deposition process has the low characteristic of reaction temperature, under low temperature depositing environment, O
2oxidation rate is very low, avoids O therefore, it is possible to more effective
2with the materials from oxidizing reaction of fin 104, O
2the silicon source only provided with atom layer deposition process reacts, the screen 108 formed plays the effect of passivation layer, therefore, reduce further the impact forming screen 108 and fin 104 is caused, the material of fin 104 in the technical process forming screen 108 is not consumed, further increases the electric property of the fin field effect pipe of formation; Meanwhile, the screen 108 adopting atom layer deposition process to be formed has good consistency of thickness, and the fin 104 of the corner of fin 104 and separator 106 also will be subject to the protection of screen 108, prevents fin 104 material of described corner from sustaining damage; Further, etching technics to adopt atom layer deposition process formed screen 108 and the material of fin 104 between there is higher etching selection ratio, the described screen 108 of follow-up easy removal and remove technique on the material of fin 104 without impact.
As an embodiment, the technological parameter of described atom layer deposition process is: silicon source gas flow is 20sccm to 2000sccm, oxygen source gas flow is 10sccm to 1000sccm, reaction chamber pressure is that 1 millitorr to 50 holds in the palm, reaction chamber temperature is 0 degree to 120 degree, and radio-frequency power is 1000 watts to 3000 watts.
After employing atom layer deposition process forms screen 108, in order to improve the compactness of described screen 108, developer solution is avoided to be contacted with fin 104 by described screen 108 further, developer solution is avoided to cause corrosion to fin 104 material, after formation screen 108, also comprise step: annealing in process is carried out to described screen 108, improve the compactness of screen 108, thus improve the hardness of screen 108.
As an embodiment, the technological parameter of described annealing in process is: annealing temperature is 550 degree to 1150 degree, and anneal duration is 20min to 150min, and annealing in process is at N
2or carry out under He atmosphere.
In the present embodiment, the material of described screen 108 is silica, and the thickness of screen 108 is 10 dust to 1000 dusts.
Please refer to Fig. 8, form the first photoresist film 109 on described screen 108 surface.
Described first photoresist film 109 for subsequent etching is formed patterned first photoresist layer prepare.
Spin coating proceeding is adopted to form described first photoresist film 109.The photoresist type of described first photoresist film 109 is positive photoetching rubber or negative photoresist.
Please refer to Fig. 9, exposure-processed is carried out to described first photoresist film 109 (please refer to Fig. 8); Development treatment is carried out to the first photoresist film 109 after exposure-processed, forms patterned first photoresist layer 110.
As an embodiment, the photoresist type of described first photoresist film 109 is positive photoetching rubber, there is degradation reaction in the first photoresist film 109 of exposure region, first photoresist film 109 of described generation degradation reaction is dissolved in the developer solution of development treatment, and unexposed first photoresist film 109 retains patterned first photoresist layer 110 of formation.
As another embodiment, the photoresist type of described first photoresist film 109 is negative photoresist, there is cross-linking reaction in the first photoresist film 109 of exposure region, and the first photoresist film 109 that cross-linking reaction does not occur is dissolved in the developer solution of development treatment, and the first photoresist film 109 of exposure retains patterned first photoresist layer 110 of formation.
In the present embodiment, the developer solution that described development treatment adopts is the developer solution containing Tetramethylammonium hydroxide.
In development process, because the present embodiment is formed with screen 108 on fin 104 surface, and described screen 108 has good consistency of thickness and stronger hardness, can effectively prevent developer solution from contacting with fin 104 surface, avoid developer solution to cause corrosion to fin 104, thus improve the electric property of the fin field effect pipe formed.
Please refer to Figure 10, with described patterned first photoresist layer 110 for mask, the first doping process 111 is carried out to part fin 104.
First doping process 111 is carried out to fin 104, threshold voltage or the saturation current of fin field effect pipe can be improved, make the fin field effect pipe of formation meet process requirements.
Described first doping process 111 is ion implantation, and injecting ion is N-type ion or P type ion, and wherein, N-type ion is P, As or Sb, and P type ion is B, Ga or In.
Please refer to Figure 11, remove described patterned first photoresist layer 110 (please refer to Figure 10).
Cineration technics or wet-etching technology is adopted to remove described first photoresist layer 110.
Please refer to Figure 12, form the second photoresist film on described screen 108 surface; Exposure-processed is carried out to described second photoresist film; Development treatment is carried out to the second photoresist film after exposure-processed, forms patterned second photoresist layer 112.
The processing step forming patterned second photoresist layer 112 with reference to the processing step forming patterned first photoresist layer 110 (please refer to Fig. 9), can not repeat them here.
From the aforementioned analysis to forming patterned first photoresist layer 110, in the present embodiment, formed in the technical process of patterned second photoresist layer 112, avoid developer solution and cause corrosion to fin 104, fin 104 maintains good performance.
Please refer to Figure 13, with described patterned second photoresist layer 112 for mask, the second doping process 113 is carried out to part fin 104.
Described second doping process 113 improves threshold voltage or the saturation current of fin field effect pipe.
Described second doping process 113 is ion implantation, and injecting ion is N-type ion or P type ion, and in the present embodiment, the doping type of described second doping process 113 is contrary with the doping type of the first doping process.
Please refer to Figure 14, remove described patterned second photoresist layer 112 (please refer to Figure 13).
Cineration technics or wet-etching technology is adopted to remove described patterned second photoresist layer 112.
Please refer to Figure 15, remove described screen 108 (please refer to Figure 14).
The technique adopting dry etching, wet etching or dry etching and wet etching to combine removes described screen 108.
As an embodiment, the etch liquids of described wet-etching technology is hydrofluoric acid solution (DHF:DiluteHF), and wherein, in hydrofluoric acid, the volume ratio of water and hydrofluoric acid is 50:1 to 1000:1.
As another embodiment, adopt dry etch process etching to remove described screen 108, perform described dry etch process by SiCoNi etching system, the etching gas of dry etch process comprises NH
3and HF, in certain embodiments, etching gas is except comprising NH
3with outside HF, inert gas can also be comprised, such as N
2, He or Ar.
As other embodiments, the technique adopting dry etching and wet etching to combine removes described screen 108, such as, first carries out dry etch process and then carries out wet-etching technology, removes screen 108 to etch.
Described wet-etching technology or dry etch process very large to the etch rate of silica, and hardly etching is caused to silicon, therefore, the technique removing screen 108 can not cause harmful effect to fin 104, after the described screen 108 of removal, fin 104 still maintains good characteristic size.
Follow-up processing step also comprises: form the grid structure across described fin 104 surface; Ion implantation is carried out to the fin of described grid structure both sides and forms source electrode and drain electrode.
To sum up, the technical scheme of fin field effect pipe formation method provided by the invention has the following advantages:
First, depositing operation is adopted to form the screen being covered in fin portion surface, and the reacting gas of depositing operation comprises main source gas and oxygen source gas, wherein, main source gas is the gas containing fin material atom, when therefore adopting described depositing operation to form screen, due to the atom containing fin material in the gas of main source, react between the gas of oxygen source gas main and main source, the probability of effective minimizing oxygen source gas and the materials from oxidizing reaction of fin, reduce the consumption of fin material, after making to form screen, fin still maintains good characteristic size, therefore the fin field effect pipe formed has good electric property.
Meanwhile, after formation screen, described screen can prevent development treatment from causing damage to fin, causes corrosion after avoiding developer solution to contact with fin portion surface to fin, thus improves the electric property of the fin field effect pipe formed further.
Secondly, employing height is vertical wide forms described screen than depositing operation, and the screen of formation has larger hardness, effectively can stop that developer solution is through described screen, effectively prevent developer solution to the harmful effect of fin further; And, adopt the high vertical wide shielding thickness consistency than depositing operation formation good, in the corner that fin and separator have a common boundary, screen still has thicker thickness, prevent developer solution from entering the fin portion surface of corner, therefore, it is possible to effectively prevent the fin of corner from sustaining damage.
Again, atom layer deposition process is adopted to form described screen, because the depositing temperature of atom layer deposition process is lower, the oxidation rate of oxygen is very little at low ambient temperatures, therefore, the ability of further reduction dioxygen oxidation fin material, thus the consumption of further fin material, improve the electric property of fin field effect pipe further.
Finally, after employing atom layer deposition process forms screen, annealing in process is carried out to described screen, improve compactness and the hardness of screen, the ability that further reduction developer solution contacts with fin portion surface through described screen, thus the further damage reducing developer solution and fin is caused, improve the electric property of fin field effect pipe further.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (17)
1. a formation method for fin field effect pipe, is characterized in that, comprising:
There is provided substrate, described substrate surface is formed with some discrete fins;
Adopt depositing operation to form the screen being covered in described fin portion surface, and the reacting gas of described depositing operation comprises main source gas and oxygen source gas, wherein, main source gas is the gas containing fin material atom;
Photoresist film is formed on described screen surface;
Exposure-processed and development treatment are carried out to described photoresist film, forms patterned photoresist layer;
With described patterned photoresist layer for mask, doping process is carried out to part fin;
Remove described patterned photoresist layer;
Remove described screen.
2. the formation method of fin field effect pipe as claimed in claim 1, is characterized in that, described depositing operation vertically widely compares depositing operation for high.
3. the formation method of fin field effect pipe as claimed in claim 2, it is characterized in that, described main source gas is silicon source gas, and described oxygen source gas is O
2.
4. the formation method of fin field effect pipe as claimed in claim 3, it is characterized in that, it is the high vertical wide chemical vapor deposition method that compares than depositing operation that described height is indulged wide, and the high vertical wide technological parameter than chemical vapor deposition method is: silicon source gas flow is 20sccm to 2000sccm, oxygen source gas flow is 10sccm to 1000sccm, reaction chamber pressure is that 1 millitorr to 50 holds in the palm, and reaction chamber temperature is 450 degree to 800 degree.
5. the formation method of fin field effect pipe as claimed in claim 1, it is characterized in that, described depositing operation is atom layer deposition process.
6. the formation method of fin field effect pipe as claimed in claim 5, it is characterized in that, described main source gas is silicon source gas, and described oxygen source gas is O
2.
7. the formation method of fin field effect pipe as claimed in claim 6, it is characterized in that, the technological parameter of described atom layer deposition process is: silicon source gas flow is 20sccm to 2000sccm, oxygen source gas flow is 10sccm to 1000sccm, reaction chamber pressure is that 1 millitorr to 50 holds in the palm, reaction chamber temperature is 0 degree to 120 degree, and radio-frequency power is 1000 watts to 3000 watts.
8. the formation method of fin field effect pipe as claimed in claim 5, is characterized in that, also comprises step: carry out annealing in process to described screen after the described screen of formation.
9. the formation method of fin field effect pipe as claimed in claim 8, it is characterized in that, the technological parameter of described annealing in process is: annealing temperature is 550 degree to 1150 degree, and anneal duration is 20min to 150min, and annealing in process is at N
2or carry out under He atmosphere.
10. the formation method of fin field effect pipe as claimed in claim 1, it is characterized in that, the material of described screen is silica.
The formation method of 11. fin field effect pipes as claimed in claim 1, is characterized in that, the technique adopting dry etching, wet etching or dry etching and wet etching to combine removes described screen.
The formation method of 12. fin field effect pipes as claimed in claim 11, it is characterized in that, the etch liquids of described wet-etching technology is hydrofluoric acid solution; Perform described dry etch process by SiCoNi etching system, the etching gas of dry etch process comprises NH
3and HF.
The formation method of 13. fin field effect pipes as claimed in claim 1, it is characterized in that, the developer solution of described development treatment is the developer solution containing Tetramethylammonium hydroxide.
The formation method of 14. fin field effect pipes as claimed in claim 1, it is characterized in that, the forming step of fin comprises: provide initial substrate; Patterned sacrifice layer is formed in described initial substrate surface; The side wall layer of adjacent sacrifice layer is formed in described initial substrate surface; Remove described sacrifice layer; With described side wall layer for mask etching initial substrate forms fin, the initial substrate after etching is substrate.
The formation method of 15. fin field effect pipes as claimed in claim 1, it is characterized in that, the substrate surface between adjacent fin is formed with separator, and separator top surface is lower than fin top surface, and screen is positioned at insulation surface.
The formation method of 16. fin field effect pipes as claimed in claim 15, is characterized in that, adopts fluid chemistry gas-phase deposition to form described separator.
The formation method of 17. fin field effect pipes as claimed in claim 1, it is characterized in that, described doping process is ion implantation technology, and the injection ion of ion implantation is N-type ion or P type ion.
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| CN106952822A (en) * | 2016-01-07 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | Improve the method for fin field effect pipe performance |
| CN106952806A (en) * | 2016-01-07 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | Improve the method for fin field effect pipe performance |
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