CN105088167B - 承载装置、反应腔室及半导体加工设备 - Google Patents

承载装置、反应腔室及半导体加工设备 Download PDF

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CN105088167B
CN105088167B CN201410213132.2A CN201410213132A CN105088167B CN 105088167 B CN105088167 B CN 105088167B CN 201410213132 A CN201410213132 A CN 201410213132A CN 105088167 B CN105088167 B CN 105088167B
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武学伟
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Beijing North Microelectronics Co Ltd
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Abstract

本发明提供的承载装置、反应腔室及半导体加工设备，其包括托盘、基座和压环，其中，托盘用于承载被加工工件；基座用于承载托盘；压环用于将托盘固定在基座上，而且，压环下表面具有与托盘上表面的边缘区域相贴合的环形平面，并且在托盘上表面的边缘区域上还设置有环形凹部，该环形凹部与环形平面的位于压环环孔周边的环形区域相重叠，且环形凹部的内沿位于压环环孔的内侧。本发明提供的承载装置，其不仅可以避免在压环与托盘相互脱离时形成污染颗粒，而且还可以防止压环损坏托盘。

Description

承载装置、反应腔室及半导体加工设备
技术领域
本发明涉及微电子加工技术领域，具体地，涉及一种承载装置、反应腔室及半导体加工设备。
背景技术
在集成电路的制造过程中，通常采用物理气相沉积（Physical VaporDeposition，以下简称PVD）技术进行在晶片上沉积金属层等材料的沉积工艺。如，用于在LED芯片上制备ITO（Indium Tin Oxides，纳米铟锡金属氧化物）薄膜。在实施工艺时，由于LED芯片的尺寸较小（通常为2英寸或4英寸等），这就需要承载装置具有可同时承载多个LED芯片的托盘，以及将托盘固定在工艺腔室内的基座上的压环，以实现同时在多个LED芯片上制备ITO薄膜。
图1为现有的PVD设备的剖视图。如图1所示，PVD设备包括反应腔室10，在反应腔室10内的顶部设置有靶材14；在反应腔室10内，且位于靶材14的下方设置有承载装置，该承载装置包括托盘12、基座11和压环13，其中，托盘12用于承载多个晶片，如图2所示；基座11用于承载托盘12，并且基座11可上下移动，以使晶片能够上升至工艺位置或下降至装卸位置；当基座11下降，以使晶片离开工艺位置时，压环13由固定在反应腔室10的侧壁上的内衬15支撑，而当基座11上升，以使晶片位于工艺位置时，此时托盘12将压环13顶起，压环13借助自身重力压住托盘12上表面的边缘区域，以将托盘12固定在基座11上。
上述压环13的具体结构如图3所示，压环13与托盘12相互贴合的两个贴合面完全贴合，这在实际应用中会产生这样的问题，即：在完成薄膜沉积工艺之后，分别沉积在托盘12上表面与压环13上表面上的薄膜会在二者的结合处连在一起，当基座11下降，压环13与托盘12的两个贴合面相互脱离时，此时位于托盘12上表面与压环13上表面的结合处的薄膜会脱落下来形成污染颗粒。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种承载装置、反应腔室及半导体加工设备，其不仅可以避免在压环与托盘相互脱离时形成污染颗粒，而且还可以防止压环损坏托盘。
为实现本发明的目的而提供一种承载装置，其包括托盘、基座和压环，其中，所述托盘用于承载被加工工件；所述基座用于承载托盘；所述压环用于将所述托盘固定在所述基座上，所述压环下表面具有与所述托盘上表面的边缘区域相贴合的环形平面，并且在所述托盘上表面的边缘区域上还设置有环形凹部，所述环形凹部与所述环形平面的位于所述压环环孔周边的环形区域相重叠，且所述环形凹部的内沿位于所述压环环孔的内侧。
优选的，所述环形平面的位于所述压环环孔周边的环形区域在所述压环的径向上的宽度大于所述环形凹部的深度。
优选的，所述环形凹部的深度的取值范围在0.5～1mm。
优选的，所述环形平面的位于所述压环环孔周边的环形区域在所述压环的径向上的宽度与所述环形凹部的深度的比值为5～6。
优选的，所述环形凹部在所述压环的径向上的宽度的取值范围在6～8mm。
优选的，所述压环采用不锈钢材料制作。
优选的，所述托盘采用铝或铝合金材料制作。
作为另一个技术方案，本发明还提供一种反应腔室，其包括承载装置，所述承载装置采用了本发明提供的上述承载装置。
优选的，还包括基座升降机构，所述基座升降机构用于驱动所述基座作升降运动，以使置于其上的所述托盘上的被加工工件上升至工艺位置或下降至装卸位置，并且在所述反应腔室的腔室侧壁内侧设置有环形内衬，所述环形内衬的下端向内弯曲，并延伸至所述压环的底部；当所述基座升降机构驱动所述基座下降，以使被加工工件离开所述工艺位置时，所述压环由所述内衬的下端支撑；当所述基座升降机构驱动所述基座上升，以使被加工工件位于所述工艺位置时，所述压环脱离所述内衬的下端，并借助自身重力压住所述托盘上表面的边缘区域。
作为另一个技术方案，本发明还提供一种半导体加工设备，包括反应腔室，所述反应腔室采用了本发明提供的上述反应腔室。
本发明具有以下有益效果：
本发明提供的承载装置，其压环下表面具有与托盘上表面的边缘区域相贴合的环形平面，并在托盘上表面的边缘区域上设置环形凹部，该环形凹部与环形平面的位于压环环孔周边的环形区域相重叠，且环形凹部的内沿位于压环环孔的内侧。借助环形凹部，可以使压环下表面的环孔周边的环形区域与托盘上表面之间形成间隙，从而在完成薄膜沉积工艺之后，分别沉积在托盘上表面与压环上表面上的薄膜是断开的，从而可以避免在压环与托盘相互脱离时形成污染颗粒。此外，通过将压环下表面的与托盘上表面的边缘区域相贴合的表面设置为环形平面，可以避免该环形平面与托盘上表面的边缘区域相贴合的区域存在台阶或尖角等易损坏托盘的结构，从而可以防止铝压环压坏不锈钢托盘，或者铝压环与不锈钢压环因热膨胀变形程度的差异而卡在一起。
本发明提供的反应腔室，其通过采用本发明提供的上述承载装置，不仅可以提高产品质量，而且还可以提高设备的使用成本。
本发明提供的半导体加工设备，其通过采用本发明提供的上述反应腔室，不仅可以提高产品质量，而且还可以提高设备的使用成本。
附图说明
图1为现有的PVD设备的剖视图；
图2为托盘的示意图；
图3为沉积在托盘上表面与压环上表面的结合处的薄膜的分布图；
图4A为本发明实施例提供的承载装置的剖视图；
图4B为图4A中I区域的局部放大图；
图4C为图4A中承载装置的托盘的示意图；
图4D为使用本发明实施例提供的承载装置时沉积在托盘上表面与压环上表面的结合处的薄膜的分布图；
图5为被加工工件位于工艺位置时本发明实施例提供的反应腔室的剖视图；以及
图6为被加工工件位于装卸位置时本发明实施例提供的反应腔室的剖视图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的承载装置、反应腔室及半导体加工设备进行详细描述。
图4A为本发明实施例提供的承载装置的局部示意图。图4B为图4A中I区域的局部放大图。图4C为图4A中承载装置的托盘的示意图。请一并参阅图4A、图4B和图4C，承载装置包括托盘22、基座21和压环23。其中，托盘22用于承载被加工工件；基座21用于承载托盘22；压环23用于将托盘22固定在基座21上。
而且，在压环23下表面具有与托盘22上表面的边缘区域相贴合的环形平面231，如图4B所示，并且在托盘22上表面的边缘区域上还设置有环形凹部221，如图4C所示，该环形凹部221与环形平面231的位于压环环孔232周边的环形区域2311相重叠，且环形凹部221的内沿2211位于压环环孔232的内侧。也就是说，在托盘22上表面的边缘区域上设置有环形凹部221，且压环23下表面的环形平面231叠置在托盘22上表面的边缘区域上，并且该环形平面231的位于压环环孔232周边的环形区域2311在环形凹部221的开口上方悬空，即，该环形区域2311因环形凹部221的存在而并未与托盘22上表面相接触，且与环形凹部221的底面之间具有竖直间隙；而该环形平面231的外围区域2312（即，环绕在环形区域2311外侧的区域）则与托盘22上表面的位于环形凹部221的外周周边的区域相贴合。
由于环形区域2311悬空在环形凹部221的开口上方，且与环形凹部221的底面之间具有竖直间隙，即，压环环孔232周边的环形区域与托盘22上表面之间形成间隙，这使得在完成薄膜沉积工艺之后，分别沉积在托盘22上表面与压环23上表面上的薄膜是断开的，如图4D所示，从而可以避免在压环23与托盘22相互脱离时形成污染颗粒。此外，借助压环23的环形平面231，可以避免该环形平面231与托盘22上表面的边缘区域相贴合的区域存在台阶或尖角等易损坏托盘的结构，在这种情况下，即使压环23采用不锈钢材料制作，且托盘22采用铝或铝合金制作，该环形平面231也可以防止铝压环压坏不锈钢托盘，或者铝压环与不锈钢压环因热膨胀变形程度的差异而卡在一起。
另外，环形平面231的位于压环环孔232周边的环形区域2311在压环23的径向上的宽度L大于环形凹部221的深度H，以进一步防止托盘22被压环23损坏。在实际应用中，上述宽度L、深度H以及二者的比值应综合考虑托盘和压环在高温环境下的热膨胀变形程度，以及托盘与压环之间的相对位置误差等因素而设定。优选的，环形凹部的深度的取值范围在0.5～1mm；环形凹部在所述压环的径向上的宽度的取值范围在6～8mm；上述宽度L与深度H的比值为5～6。
优选的，压环23采用不锈钢材料制作，以保证能够具有足够的硬度压住托盘22。
优选的，托盘22采用诸如铝或铝合金材料等的重量轻、导热性能较好的材料制作。
作为另一种技术方案，本发明实施例还提供一种反应腔室，图5为被加工工件位于工艺位置时本发明实施例提供的反应腔室的剖视图。图6为被加工工件位于装卸位置时本发明实施例提供的反应腔室的剖视图。请一并参阅图5和图6，在反应腔室30内的顶部设置有靶材31；在反应腔室30内，且位于靶材31的下方设置有承载装置，该承载装置采用了本发明实施例提供的上述承载装置。
在本实施例中，反应腔室30还包括基座升降机构33，基座升降机构33用于驱动基座21作升降运动，以使置于其上的托盘22上的被加工工件上升至工艺位置（如图5中托盘22上表面所在位置）或下降至装卸位置（如图6中托盘22上表面所在位置）。而且，在反应腔室30的腔室侧壁内侧设置有环形内衬32，环形内衬32的下端向内弯曲，并延伸至压环23的底部，用以在基座升降机构33驱动基座21下降，以使被加工工件离开工艺位置时，支撑压环23。
在装载载有被加工工件的托盘22时，基座升降机构33驱动基座21下降，以使被加工工件离开工艺位置时，如图6所示，压环23由内衬32的下端支撑，此时机械手等传输装置可将托盘22传输至基座21的上表面上，从而完成托盘22的装载。
在完成托盘22的装载的之后，基座升降机构33驱动基座21上升，以使被加工工件位于工艺位置时，如图5所示，压环23被托盘22上表面托起，并脱离内衬的下端，此时压环23借助自身重力压住托盘22上表面的边缘区域，从而实现将托盘22固定在基座21上。
本发明实施例提供的反应腔室，其通过采用本发明实施例提供的上述承载装置，不仅可以提高产品质量，而且还可以提高设备的使用成本。
作为另一种技术方案，本发明实施例还提供一种半导体加工设备，其包括反应腔室，该反应腔室采用了本发明实施例提供的上述反应腔室。
本发明实施例提供的半导体加工设备，其通过采用本发明实施例提供的上述反应腔室，不仅可以提高产品质量，而且还可以提高设备的使用成本。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种承载装置，其包括托盘、基座和压环，其中，所述托盘用于承载被加工工件；所述基座用于承载托盘；所述压环用于将所述托盘固定在所述基座上，其特征在于，所述压环下表面具有与所述托盘上表面的边缘区域相贴合的环形平面，并且在所述托盘上表面的边缘区域上还设置有环形凹部，所述环形凹部与所述环形平面的位于所述压环环孔周边的环形区域相重叠，且所述环形凹部的内沿位于所述压环环孔的内侧。
2.根据权利要求1所述的承载装置，其特征在于，所述环形平面的位于所述压环环孔周边的环形区域在所述压环的径向上的宽度大于所述环形凹部的深度。
3.根据权利要求2所述的承载装置，其特征在于，所述环形凹部的深度的取值范围在0.5～1mm。
4.根据权利要求2或3所述的承载装置，其特征在于，所述环形平面的位于所述压环环孔周边的环形区域在所述压环的径向上的宽度与所述环形凹部的深度的比值为5～6。
5.根据权利要求1所述的承载装置，其特征在于，所述环形凹部在所述压环的径向上的宽度的取值范围在6～8mm。
6.根据权利要求1所述的承载装置，其特征在于，所述压环采用不锈钢材料制作。
7.根据权利要求1所述的承载装置，其特征在于，所述托盘采用铝或铝合金材料制作。
8.一种反应腔室，其包括承载装置，其特征在于，所述承载装置采用权利要求1-7任意一项所述的承载装置。
9.根据权利要求8所述的反应腔室，其特征在于，还包括基座升降机构，所述基座升降机构用于驱动所述基座作升降运动，以使置于其上的所述托盘上的被加工工件上升至工艺位置或下降至装卸位置，并且
在所述反应腔室的腔室侧壁内侧设置有环形内衬，所述环形内衬的下端向内弯曲，并延伸至所述压环的底部；当所述基座升降机构驱动所述基座下降，以使被加工工件离开所述工艺位置时，所述压环由所述内衬的下端支撑；当所述基座升降机构驱动所述基座上升，以使被加工工件位于所述工艺位置时，所述压环脱离所述内衬的下端，并借助自身重力压住所述托盘上表面的边缘区域。
10.一种半导体加工设备，包括反应腔室，其特征在于，所述反应腔室采用权利要求8-9任意一项所述的反应腔室。
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