CN105084760B - 一种超薄发光玻璃的制备方法及相关发光装置 - Google Patents
一种超薄发光玻璃的制备方法及相关发光装置 Download PDFInfo
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CN105084760B true CN105084760B (zh) | 2019-01-08 |
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CN108503216A (zh) * | 2018-05-15 | 2018-09-07 | 上海应用技术大学 | 一种荧光玻璃的制备方法及荧光玻璃 |
CN116768633A (zh) * | 2023-06-20 | 2023-09-19 | 苏州艾成科技技术有限公司 | 一种半导体用AlN组成成分及其制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101171205A (zh) * | 2005-05-11 | 2008-04-30 | 日本电气硝子株式会社 | 荧光体复合玻璃、荧光体复合玻璃生片和荧光体复合玻璃的制造方法 |
JP2009286681A (ja) * | 2008-05-30 | 2009-12-10 | Ohara Inc | 発光性ガラスおよび発光性結晶化ガラス |
US20110062393A1 (en) * | 2006-06-06 | 2011-03-17 | Karine Seneschal-Merz | Sintered glass ceramic and method for producing the same |
CN102633440A (zh) * | 2012-04-26 | 2012-08-15 | 南通脉锐光电科技有限公司 | 包含荧光体的玻璃涂层及其制造方法、发光器件及其制造方法 |
DE102011084543A1 (de) * | 2011-10-14 | 2013-04-18 | Schott Ag | Borosilicatglas mit hoher hydrolytischer Beständigkeit |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101171205A (zh) * | 2005-05-11 | 2008-04-30 | 日本电气硝子株式会社 | 荧光体复合玻璃、荧光体复合玻璃生片和荧光体复合玻璃的制造方法 |
US20110062393A1 (en) * | 2006-06-06 | 2011-03-17 | Karine Seneschal-Merz | Sintered glass ceramic and method for producing the same |
JP2009286681A (ja) * | 2008-05-30 | 2009-12-10 | Ohara Inc | 発光性ガラスおよび発光性結晶化ガラス |
DE102011084543A1 (de) * | 2011-10-14 | 2013-04-18 | Schott Ag | Borosilicatglas mit hoher hydrolytischer Beständigkeit |
CN102633440A (zh) * | 2012-04-26 | 2012-08-15 | 南通脉锐光电科技有限公司 | 包含荧光体的玻璃涂层及其制造方法、发光器件及其制造方法 |
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Effective date of registration: 20170612 Address after: 518055 Guangdong city of Shenzhen province Nanshan District Xili town tea light road on the south side of Shenzhen integrated circuit design and application of Industrial Park 401 Applicant after: APPOTRONICS Corp.,Ltd. Address before: 518055 Guangdong city of Shenzhen province Nanshan District Xi Li Light Road No. 1089 Shenzhen integrated circuit design and application of Industrial Park Building 4 Applicant before: YLX Inc. |
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Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Patentee after: APPOTRONICS Corp.,Ltd. Address before: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Patentee before: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. |
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Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Patentee after: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. Address before: 518055 Guangdong province Shenzhen Nanshan District Xili town south of Cha Guang road Shenzhen integrated circuit design application Industrial Park 401 Patentee before: APPOTRONICS Corp.,Ltd. |