CN105063551A - Mask method for preparing thin mask layer composed of multiple materials in zoning mode - Google Patents
Mask method for preparing thin mask layer composed of multiple materials in zoning mode Download PDFInfo
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- CN105063551A CN105063551A CN201510412041.6A CN201510412041A CN105063551A CN 105063551 A CN105063551 A CN 105063551A CN 201510412041 A CN201510412041 A CN 201510412041A CN 105063551 A CN105063551 A CN 105063551A
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Abstract
The invention provides a mask method for preparing a thin mask layer composed of multiple materials in a zoning mode. According to the mask method, a single-layer thin mask product composed of two or more materials in a zoning mode is prepared with aid of a mask mechanism composed of a base, mask plates and a support frame. According to the mask method, the mask plates are specially customized according to a thin mask product: each of the mask plates is in one-to-one correspondence with each material in the thin mask product; the mask plates are provided with opening areas which are identical with the corresponding materials in the thin mask product in position, shape and size of the boundary contour. When the thin mask layer composed of the multiple materials in the zoning mode is prepared, deposition source materials are replaced in turn, and at the same time, the mask plates corresponding to the deposition source materials are used in turn; the thin mask layer composed of the multiple materials in the zoning mode is prepared completely till all the mask plates are used for once in turn. The mechanical mask method is adopted, and the mask method and the mask mechanism used in the mask method are simple, easy to use and reliable; the production cost can be reduced significantly, and the quality of the thin mask product can be improved.
Description
Technical field
The invention belongs to field of film preparation, be specifically related to a kind of masking method preparing the thin film layer of many material partitions composition.
Background technology
In the manufacture process of film, usually need same layer film is made up of multiple differing materials subregion.Mainly utilize photo etched mask technology head it off at present, its basic ideas first in substrate, plate the corrosion resistant photoresist material of one deck, be irradiated on photoresist material with relief high light by mask plate, by photoresist material not by zonal corrosion that mask plate hides, with scavenging solution, the photoresist material of corrosion is removed again, expose substrate below, then deposited particles, just define the mixed membranous layer be made up of photoresist material and certain material.There is shortcomings in the method for this photoetching: first, when the material category required in mixolimnion is various, and when not allowing to comprise photoresist material, how make must to consider in this way the photoresist material removing that light-chemical reaction those is not occurred, and do not affect the material deposited, and the increase of material kind number can make whole technological process become especially complicated; Secondly require that the substrate of carrying photoresist material also has erosion resistance, which limits the selection of base material, more do not allow the lower floor using corrosion-prone thin film layer as many material mixing film; Again, this photoetching method relates to light-chemical reaction, corrosion scavenging solution etc., easily introduces other impurity in the film.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of masking method preparing the thin film layer of many material partitions composition.
The masking method of the thin film layer of preparation of the present invention many material partitions composition, comprises the following steps successively:
A monocrystal silicon substrate is fixed on bracing frame by (), be placed in the particle-irradiation district of film coating apparatus;
B () gets silicon-dioxide thin slice, according to the boundary profile of the first material in the thin film layer of the many material partitions composition that will prepare, silicon-dioxide thin slice is processed position, shape, the identical opening area of size with it, as first piece of mask plate;
C first piece of mask plate covers in monocrystal silicon substrate by (), make mask plate side steady brace embed from top to bottom along bracing frame locating slot during covering, by mask plate and monocrystal silicon substrate clamping after covering;
D () deposits the first thin-film material in the thin film layer of many material partitions composition;
E () takes off first piece of mask plate;
F (), with reference to step (b) ~ (e), deposits the second thin-film material in the thin film layer of many material partitions composition;
G (), with reference to step (b) ~ (e), deposits the third thin-film material in the thin film layer of many material partitions composition;
H (), with reference to step (b) ~ (e), deposits all the other thin-film materials until prepared by the thin film layer of many material partitions composition.
The thin film layer of described many material partitions composition is the single thin film be made up of two kinds or more territories, material partition.
The thin film layer thickness of described many material partitions composition is less than 1 micron.
Described thin-film material comprises gold and silver, copper, silicon nitride, titanium oxide, aluminum oxide.
Described monocrystal silicon substrate is the planar substrates of regular shape.
Described film coating apparatus comprises vacuum magnetron sputtering coating film device, chemical vapor deposition film coating apparatus, vacuum ionic evaporation coating device.
The length and width of described silicon-dioxide thin slice is equal with the length and width of monocrystal silicon substrate respectively, and thickness is less than 0.3 millimeter.
Utilize method of the present invention, before the thin film layer of preparation many material partitions composition, according to the requirement of the film product for preparation, suitable substrate, bracing frame must be selected, and produce corresponding mask plate.Base material generally selects silicon single crystal; When selecting bracing frame, not only require that it is applicable to current film coating apparatus, also require that it has certain fixing, positioning function (such as locating slot), can substrate, mask plate be fixed on bracing frame by specified location, prevent substrate, mask plate, in coating process, change in location occurs, so just can guarantee mask precision; Mask plate must customize according to the boundary profile of often kind of material in the thin film layer of the many material partitions composition for preparation, the corresponding one piece of mask plate of a kind of material.During customization, select the hard brittle material (generally selecting silicon-dioxide) that on-deformable, thickness is less than 0.3 millimeter, first be processed into and shapes of substrates, the identical thin plate of size, process the position of a certain material boundary profile in the thin film layer formed with many material partitions, shape, the identical opening area of size more thereon, as the mask plate that material this in the thin film layer that many material partitions form is corresponding.In like manner, the mask plate that in the thin film layer of customized production many material partitions composition, other various materials are corresponding is continued.Finally all these mask plates are formed a set of mask plate, during thin film layer only for the corresponding with it many material partitions composition of preparation.If change for the distribution of often kind of material in the thin film layer of the many material partitions composition of preparation, then must customized production is corresponding again mask plate.
Utilize method of the present invention, in the process of the thin film layer of preparation many material partitions composition, first substrate is fixed on bracing frame, moves to the particle-irradiation district of film coating apparatus.Can according to film product needs, in substrate, deposition is only containing a kind of film of material in advance, and this process is identical with traditional film coating method.When needing the thin film layer preparing many material partitions composition, just need a set of mask plate of the thin film layer customized production used according to this many material partitions composition.First any a piece in this cover mask plate is taken out, be placed on above substrate, already present rete in mask plate and upper surface of substrate or substrate is fitted, ensures the outward flange precise alignment of mask plate and substrate, and use bracing frame to be fixed by mask plate, and substrate simply clamp.Then the bracing frame of band mask plate, substrate is moved to particle-irradiation district, deposit the material in the thin film layer that many material partitions corresponding with mask plate on current base form.To be deposited complete after, suprabasil mask plate is taken off, is labeled as and uses.Then from untapped mask plate, take out other one piece, with reference to method identical above, change above substrate, move to particle-irradiation district together with bracing frame, deposit the material in the thin film layer of another kind of many material partitions composition.In the same way, until many material partitions composition thin film layer in all material deposited.Finally, also according to actual product demand, the thin film layer that many material partitions form can continue other thin film layers of deposition.
In the present invention, if very little relative to area of base for the area of the thin film layer of many material partitions composition of preparation, then can in the mask plate process that the thin film layer of this many material partitions composition of customization is corresponding, opening area array in an identical manner by every block mask plate: namely every block mask plate has the identical hole of multiple shape, and porous arrangement mode on all mask plates is identical.So just in a membrane-film preparation process, the thin film layer product of multiple identical many material partitions composition can be produced simultaneously, improves production efficiency.
The present invention has lot of advantages: when (1) prepares the thin film layer of many material partitions composition, do not make with photoresist, can not affect the thin-film material deposited; (2) owing to not making with photoresist, just there is not the etching problem of glue, therefore thin-film material is selected more extensive, and not high to substrate requirements; (3) in the thin film layer of the many material partitions composition prepared, various material purity in respective designated area is higher; (4) masking method, process adopt the mode of pure machinery, method itself and the auxiliary means (substrate, mask plate, bracing frame) used all simple, easy-to-use, reliable, compared to traditional photo etched mask technology, significantly simplify technical process, reduce foreign matter content, production cost.
Accompanying drawing explanation
Fig. 1 is the mask structural scheme of mechanism in the embodiment of the present invention 1;
Fig. 2 is that a whole set of mask plate in the embodiment of the present invention 1 stacks sectional view;
Fig. 3 is the product schematic diagram in the embodiment of the present invention 1;
In figure, the 1. single thin film layer product of bracing frame 2. monocrystal silicon substrate 3. mask plate 4. locating slot 5. steady brace 6. through hole 7. gold mast plate 8. silver medal mask plate 9. copper mast plate 13..
Embodiment
Following examples only for illustration of the present invention, and are not limitation of the present invention.Without departing from the spirit and scope of the present invention, can also make a variety of changes, replace and modification, therefore equal technical scheme also belongs to category of the present invention to the personnel of relevant technical field.
Embodiment 1
The present embodiment uses vacuum magnetron sputtering coating film device, the thin film layer that the many material partitions be made up of gold and silver, territory, copper three kinds of material partitions of preparing strip substrate form, and in turn includes the following steps:
A monocrystal silicon substrate 2 is fixed on bracing frame 1 by (), be placed in the particle-irradiation district of film coating apparatus;
B () selects the quartz plate of 0.2 mm thick, boundary profile in the thin film layer formed in many material partitions according to gold, quartz plate is processed position, shape, the identical opening area of size with it, and along quartz plate plane each array of both direction once, form four identical through holes 6 of shape, the quartz plate this processed is as gold mast plate 7;
C () is by the mask plate 3 in gold mast plate 7(alternate figures 1) cover in substrate 2, make mask plate 3 side steady brace 5 embed from top to bottom along the locating slot 4 of bracing frame 1 during covering, after covering, mask plate 3 and substrate 2 are clamped;
D () deposits the first material in the thin film layer of many material partitions composition: gold;
E () takes off gold mast plate 7;
F () selects the quartz plate that another block of 0.2 mm thick is new, boundary profile in the thin film layer formed in many material partitions according to silver, quartz plate is processed position, shape, the identical opening area of size with it, and along quartz plate plane each array of both direction once, guarantee that the spacing of through hole 6 all directions is all identical with gold mast plate 7 after array, the quartz plate this processed is as silver-colored mask plate 8;
G () is by the mask plate 3 in silver-colored mask plate 8(alternate figures 1) cover in substrate 2, make mask plate 3 side steady brace 5 embed from top to bottom along the locating slot 4 of bracing frame 1 during covering, after covering, mask plate 3 and substrate 2 are simply clamped;
H () deposits the second material in the thin film layer of many material partitions composition: silver;
I () takes off silver-colored mask plate 8;
J () selects the quartz plate that another block of 0.2 mm thick is new, boundary profile in the thin film layer formed in many material partitions according to copper, quartz plate is processed position, shape, the identical opening area of size with it, and along quartz plate plane each array of both direction once, the spacing guaranteeing through hole 6 all directions after array is all identical with gold mast plate 7, silver-colored mask plate 8, and the quartz plate this processed is as copper mast plate 9;
K () is by the mask plate 3 in copper mast plate 9(alternate figures 1) cover in substrate 2, make mask plate 3 side steady brace 5 embed from top to bottom along the locating slot 4 of bracing frame 1 during covering, after covering, mask plate 3 and substrate 2 are simply clamped;
L () deposits the third material in the thin film layer of many material partitions composition: copper;
M () takes off copper mast plate 9;
N () takes off membrane substrate 2 from bracing frame 1, the thin film layer that the many material partitions be made up of gold and silver, territory, copper three kinds of material partitions being strip substrate form, divisible go out single thin film layer product 13.
Embodiment 2
The present embodiment adopts and the identical step of embodiment 1, and three kinds of materials in the thin film layer of wherein many material partitions composition are replaced by silicon nitride, titanium oxide, aluminum oxide successively by original gold and silver, copper.
Material in thin film layer can also select other any combination in gold and silver, copper, silicon nitride, titanium oxide, aluminum oxide; The boundary profile position of often kind of material in thin film layer, shape, size can also do any adjustment according to actual product demand; Via-hole array mode on mask plate can also be that circle waits other array way, and the through hole sum of array can increase and decrease as required.
Claims (7)
1. prepare a masking method for the thin film layer of many material partitions composition, it is characterized in that, the method comprises the following steps:
(a). monocrystal silicon substrate is fixed on bracing frame, is placed in the particle-irradiation district of film coating apparatus;
(b). get silicon-dioxide thin slice, according to the boundary profile of the first material in the thin film layer of the many material partitions composition that will prepare, silicon-dioxide thin slice is processed position, shape, the identical opening area of size with it, as first piece of mask plate;
(c). first piece of mask plate is covered in monocrystal silicon substrate, during covering, makes mask plate side steady brace embed from top to bottom along bracing frame locating slot, by mask plate and monocrystal silicon substrate clamping after covering;
(d). deposit the first thin-film material in the thin film layer of many material partitions composition;
(e). take off first piece of mask plate;
(f). with reference to step (b) ~ (e), deposit the second thin-film material in the thin film layer of many material partitions composition;
(g). with reference to step (b) ~ (e), deposit the third thin-film material in the thin film layer of many material partitions composition;
(h). with reference to step (b) ~ (e), deposit all the other thin-film materials until prepared by the thin film layer of many material partitions composition.
2. the masking method of the thin film layer of preparation according to claim 1 many material partitions composition, is characterized in that, the thin film layer of described many material partitions composition is the single thin film be made up of two kinds or more territories, material partition.
3. the masking method of the thin film layer of preparation according to claim 1 many material partitions composition, is characterized in that, the thin film layer thickness of described many material partitions composition is less than 1 micron.
4. the masking method of the thin film layer of preparation according to claim 1 many material partitions composition, it is characterized in that, described thin-film material comprises gold and silver, copper, silicon nitride, titanium oxide, aluminum oxide.
5. the masking method of the thin film layer of preparation according to claim 1 many material partitions composition, it is characterized in that, described monocrystal silicon substrate is the planar substrates of regular shape.
6. the masking method of the thin film layer of preparation according to claim 1 many material partitions composition, it is characterized in that, described film coating apparatus comprises vacuum magnetron sputtering coating film device, chemical vapor deposition film coating apparatus, vacuum ionic evaporation coating device.
7. the masking method of the thin film layer of preparation according to claim 1 many material partitions composition, it is characterized in that, the length and width of described silicon-dioxide thin slice is equal with the length and width of monocrystal silicon substrate respectively, and thickness is less than 0.3 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510412041.6A CN105063551A (en) | 2015-07-15 | 2015-07-15 | Mask method for preparing thin mask layer composed of multiple materials in zoning mode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510412041.6A CN105063551A (en) | 2015-07-15 | 2015-07-15 | Mask method for preparing thin mask layer composed of multiple materials in zoning mode |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107099768A (en) * | 2017-04-28 | 2017-08-29 | 东晶锐康晶体（成都）有限公司 | The calibrating installation and method of a kind of quartz oscillator vacuum sputtering coating mask plate |
| CN107703574A (en) * | 2017-11-29 | 2018-02-16 | 苏州晶鼎鑫光电科技有限公司 | A kind of manufacture method of multichannel integrated optical filter |
| CN107779817A (en) * | 2017-10-18 | 2018-03-09 | 深圳市华星光电半导体显示技术有限公司 | Mask plate and preparation method thereof |
| CN109023234A (en) * | 2018-08-09 | 2018-12-18 | 深圳市华星光电半导体显示技术有限公司 | A kind of mask plate more changing device and replacing options |
| CN112063972A (en) * | 2020-09-08 | 2020-12-11 | 宁波江丰电子材料股份有限公司 | Splicing coating method of semiconductor component |
| CN115537722A (en) * | 2022-09-27 | 2022-12-30 | 深圳市黄金屋真空科技有限公司 | Preparation process and product of conductive black and insulating black on same surface layer |
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| CN101861663A (en) * | 2007-10-22 | 2010-10-13 | 全球Oled科技有限责任公司 | Patterning method for light-emitting devices |
| CN103205695A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | A mask plate for vapor plating and a production method thereof |
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| US20020059903A1 (en) * | 2000-11-22 | 2002-05-23 | Sanyo Electric Co., Ltd. | Deposition mask and method of preparing the same |
| CN101861663A (en) * | 2007-10-22 | 2010-10-13 | 全球Oled科技有限责任公司 | Patterning method for light-emitting devices |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107099768A (en) * | 2017-04-28 | 2017-08-29 | 东晶锐康晶体（成都）有限公司 | The calibrating installation and method of a kind of quartz oscillator vacuum sputtering coating mask plate |
| CN107099768B (en) * | 2017-04-28 | 2019-07-12 | 东晶锐康晶体（成都）有限公司 | A kind of calibrating installation and method of quartz oscillator vacuum sputtering coating mask plate |
| US10784469B2 (en) | 2017-10-18 | 2020-09-22 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Mask and fabricating method thereof |
| CN107779817A (en) * | 2017-10-18 | 2018-03-09 | 深圳市华星光电半导体显示技术有限公司 | Mask plate and preparation method thereof |
| CN107779817B (en) * | 2017-10-18 | 2019-02-19 | 深圳市华星光电半导体显示技术有限公司 | Mask plate and preparation method thereof |
| WO2019075857A1 (en) * | 2017-10-18 | 2019-04-25 | 深圳市华星光电半导体显示技术有限公司 | Mask plate and method for fabricating same |
| CN107703574A (en) * | 2017-11-29 | 2018-02-16 | 苏州晶鼎鑫光电科技有限公司 | A kind of manufacture method of multichannel integrated optical filter |
| CN109023234A (en) * | 2018-08-09 | 2018-12-18 | 深圳市华星光电半导体显示技术有限公司 | A kind of mask plate more changing device and replacing options |
| CN109023234B (en) * | 2018-08-09 | 2020-08-28 | 深圳市华星光电半导体显示技术有限公司 | Mask plate replacing device and replacing method |
| CN112063972A (en) * | 2020-09-08 | 2020-12-11 | 宁波江丰电子材料股份有限公司 | Splicing coating method of semiconductor component |
| CN112063972B (en) * | 2020-09-08 | 2022-07-15 | 宁波江丰电子材料股份有限公司 | Splicing coating method of semiconductor component |
| CN115537722A (en) * | 2022-09-27 | 2022-12-30 | 深圳市黄金屋真空科技有限公司 | Preparation process and product of conductive black and insulating black on same surface layer |
| CN115537722B (en) * | 2022-09-27 | 2023-08-11 | 深圳市黄金屋真空科技有限公司 | Process for preparing conductive black and insulating black on same surface layer and product thereof |
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Application publication date: 20151118 |