CN105045051A - Photoresist removing method - Google Patents
Photoresist removing method Download PDFInfo
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- CN105045051A CN105045051A CN201510521796.XA CN201510521796A CN105045051A CN 105045051 A CN105045051 A CN 105045051A CN 201510521796 A CN201510521796 A CN 201510521796A CN 105045051 A CN105045051 A CN 105045051A
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Abstract
The invention discloses a photoresist removing method which comprises the following steps of: (1) removing a photoresist by wet etching; (2) washing residual photoresist on an optical fiber panel by using an acid solution; (3) heating an alkali solution, and washing the optical fiber panel by using the alkali solution; (4) placing the optical fiber panel washed by using the alkali solution in water, and continuously introducing ozone; (5) adding chlorine water; and (6) immersing the optical fiber panel by using an organic solvent. By the photoresist removing method, the parts of the photoresist at the surface layer and the bottom layer can be respectively removed, and the photoresist on the optical fiber panel is thoroughly removed.
Description
Technical field
The invention belongs to field of semiconductor manufacture, be specifically related to the minimizing technology of photoresist.
Background technology
Photoresist also known as photoresist, the photosensitive mixing material be made up of photosensitive resin, sensitizer and solvent three kinds of principal ingredients.Photoresist should have smaller surface tension, makes photoresist have good mobility and covering.After illumination, can there is photocuring reaction in exposure region in photosensitive resin, make the physical property of this material soon, and particularly significant change occurs for dissolubility, affinity etc.Photoresist is widely used in the process such as manufacture and plate making of P.e.c. and integrated circuit.The technical sophistication of photoresist, kind is more.According to its chemical reaction mechanism and development principle, negative photoresist and positive photoresist two class can be divided.What form insoluble material after illumination is negative photoresist; Otherwise be insoluble to some solvent, what become soluble substance after illumination is positive photoresist.Utilize this performance, by photoresist making coatings, the circuitous pattern needed for just etching at silicon chip surface.
Based on the chemical constitution of photosensitive resin, photoresist can be divided into three types.1. photo-polymerization type, adopts vinyl monomer, under light action, generates free radical, and free radical is trigger monomer polymerization further again, finally generates polymkeric substance, has the advantages that to form erect image.2. light breakdown type, adopts the material containing nitrine quinones, after illumination, photolysis reactions can occur, be become water-soluble from oil-soluble, can make positive photoresist.3. photo-crosslinking type, adopts polyvinyl alcohol (PVA) laurate etc. as photochromics, under the effect of light, double bond in its molecule is opened, and makes to occur between chain and chain to be cross-linked, and forms a kind of insoluble reticulate texture, and playing effect against corrosion, this is a kind of typical negative photoresist.Namely the product K PR glue of Kodak belong to this type of.Photoresists are adopted on each Rotating fields face, to form required pattern by exposure, development and etching etc. mode.When carrying out later layer process, the photoresist after by front once use is needed to remove completely.
In prior art, remove method mainly ashing and the Whote-wet method cleaning of photoresist.In removal process, be easy to cause damage to fibre faceplate material, meanwhile, need frequently to change cleaning fluid.In addition, the concentrated sulphuric acid used in prior art, can only remove photoresist top layer, thoroughly can not remove photoresist.
Summary of the invention
An object of the present invention is a kind of minimizing technology of photoresist, comprise the following steps:
(1) wet etching is used to remove photoresist;
(2) photoresist of acid solution washing fibre faceplate is used to remain;
(3) add hot alkaline solution, use aqueous slkali washing;
(4) fibre faceplate using aqueous slkali to wash is put into water, continue to pass into ozone;
(5) put into chlorine water to wash;
(6) with an organic solvent soak.
Described acid solution is hypochlorite solution, perchloric acid solution, hydrofluoric acid solution or salpeter solution.
Described aqueous slkali is one or more in sodium hydroxide solution, potassium hydroxide solution and ammonia spirit.
The temperature adding hot alkaline solution is 70-90 DEG C, uses aqueous slkali to wash more than 10 minutes.
The time passing into ozone is more than 20 minutes.
After adding chlorine water, react more than 10 minutes.
Described organic solvent is one or both in normal hexane and N-N dimethyl formamide (DMF).
The time of with an organic solvent soaking is more than 1 hour.
The temperature of with an organic solvent soaking is 40-55 DEG C.
Invention employs wet etching and removes photoresist, complex acid washing simultaneously, neutralizing treatment and oxidation removal step, and then with an organic solvent soaks, and can remove photoresist top layer and floor portions respectively, thoroughly removes the photoresist on fibre faceplate.It is effective that the present invention removes photoresist, by the setting of temperature and time, reaches best removal effect, simultaneously little to fiber panel material damage, and cleansing solution can repeatedly Reusability.
Embodiment
embodiment 1
(1) wet etching is used to remove photoresist;
(2) working concentration be 20% hypochlorite solution wash fibre faceplate photoresist remain;
(3) sodium hydroxide solution to 70 DEG C that concentration is 9% is heated, washing by soaking;
(4) fibre faceplate using sodium hydroxide solution to wash is put into water, continue to pass into ozone 20 minutes;
(5) put into concentration be 26% chlorine water washing 10 minutes;
(6) use normal hexane to soak 1 hour in 40 DEG C, take out and use clear water to clean, dry.
embodiment 2
(1) wet etching is used to remove photoresist;
(2) working concentration be 50% perchloric acid solution washing fibre faceplate photoresist remain;
(3) 10% potassium hydroxide solution to 90 DEG C that concentration is is heated, washing by soaking;
(4) fibre faceplate using potassium hydroxide solution to wash is put into water, continue to pass into ozone 25 minutes;
(5) put into concentration be 25% chlorine water washing 20 minutes;
(6) use N-N dimethyl formamide to soak 1.5 hours in 45 DEG C, take out and use clear water to clean, dry.
embodiment 3
(1) wet etching is used to remove photoresist;
(2) working concentration be 20% hydrofluoric acid solution washing fibre faceplate photoresist remain;
(3) 8% potassium hydroxide, NaOH mixed ammonium/alkali solutions to 80 DEG C that concentration is is heated, washing by soaking;
(4) fibre faceplate using mixed ammonium/alkali solutions to wash is put into water, continue to pass into ozone 22 minutes;
(5) put into concentration be 20% chlorine water washing 15 minutes;
(6) use N-N dimethyl formamide to soak 1 hour in 55 DEG C, take out and use clear water to clean, dry.
embodiment 4
(1) wet etching is used to remove photoresist;
(2) working concentration be 30% salpeter solution washing fibre faceplate photoresist remain;
(3) heat concentration be 30% ammonia spirit to 85 DEG C, washing by soaking;
(4) fibre faceplate using ammonia spirit to wash is put into water, continue to pass into ozone 22 minutes;
(5) put into concentration be 23% chlorine water washing 15 minutes;
(6) use normal hexane, N-N dimethyl formamide mixed solvent (volume ratio is 1:3) to soak fibre faceplate 1 hour in 50 DEG C, take out and use clear water to clean, dry.
Above-mentioned detailed description is illustrating for one of them possible embodiments of the present invention, and this embodiment is also not used to limit the scope of the claims of the present invention, and the equivalence that all the present invention of disengaging do is implemented or changed, and all should be contained in the scope of technical solution of the present invention.
Claims (9)
1. a minimizing technology for photoresist, is characterized in that, comprises the following steps:
Wet etching is used to remove photoresist;
The photoresist of acid solution washing fibre faceplate is used to remain;
Add hot alkaline solution, use aqueous slkali washing;
The fibre faceplate using aqueous slkali to wash is put into water, continues to pass into ozone;
Put into chlorine water to wash;
With an organic solvent soak.
2. the minimizing technology of photoresist as claimed in claim 1, it is characterized in that, described acid solution is hypochlorite solution, perchloric acid solution, hydrofluoric acid solution or salpeter solution.
3. the minimizing technology of photoresist as claimed in claim 1, it is characterized in that, described aqueous slkali is one or more in sodium hydroxide solution, potassium hydroxide solution and ammonia spirit.
4. the minimizing technology of photoresist as claimed in claim 1, it is characterized in that, the temperature adding hot alkaline solution is 70-90 DEG C, uses aqueous slkali to wash more than 10 minutes.
5. the minimizing technology of photoresist as claimed in claim 1, it is characterized in that, the time passing into ozone is more than 20 minutes.
6. the minimizing technology of photoresist as claimed in claim 1, is characterized in that, after adding chlorine water, react more than 10 minutes.
7. the minimizing technology of photoresist as claimed in claim 1, is characterized in that, described organic solvent is one or both in normal hexane and N-N dimethyl formamide.
8. the minimizing technology of photoresist as claimed in claim 1, it is characterized in that, the time of with an organic solvent soaking is more than 1 hour.
9. the minimizing technology of photoresist as claimed in claim 1, it is characterized in that, the temperature of with an organic solvent soaking is 40-55 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510521796.XA CN105045051B (en) | 2015-08-24 | 2015-08-24 | The minimizing technology of photoresist material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510521796.XA CN105045051B (en) | 2015-08-24 | 2015-08-24 | The minimizing technology of photoresist material |
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| CN105045051A true CN105045051A (en) | 2015-11-11 |
| CN105045051B CN105045051B (en) | 2016-06-01 |
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| CN201510521796.XA Active CN105045051B (en) | 2015-08-24 | 2015-08-24 | The minimizing technology of photoresist material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111235906A (en) * | 2020-01-16 | 2020-06-05 | 浙江稽山印染有限公司 | Dyeing process of suede nap |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1291347A (en) * | 1998-11-12 | 2001-04-11 | 三菱电机株式会社 | Photoresist film removing method and device therefor |
| JP2005317929A (en) * | 2004-03-29 | 2005-11-10 | Hoya Corp | Method of peeling positive resist film, method of manufacturing exposure mask, and resist peeling device |
| CN1774793A (en) * | 2003-04-16 | 2006-05-17 | 积水化学工业株式会社 | Resist stripping method and device |
| EP1975987A2 (en) * | 2007-03-31 | 2008-10-01 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
| CN101331811A (en) * | 2005-12-20 | 2008-12-24 | 三菱瓦斯化学株式会社 | Composition for removing residue from wiring board and cleaning method |
| CN101443886A (en) * | 2006-05-30 | 2009-05-27 | Hoya株式会社 | Resist film peeling method, mask blank manufacturing method and transfer mask manufacturing method |
| CN101459038A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Semi-conductor substrate cleaning method |
| CN102540775A (en) * | 2010-12-27 | 2012-07-04 | 无锡华润上华科技有限公司 | Method for removing photoresist of silicide protection layer |
-
2015
- 2015-08-24 CN CN201510521796.XA patent/CN105045051B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1291347A (en) * | 1998-11-12 | 2001-04-11 | 三菱电机株式会社 | Photoresist film removing method and device therefor |
| CN1774793A (en) * | 2003-04-16 | 2006-05-17 | 积水化学工业株式会社 | Resist stripping method and device |
| JP2005317929A (en) * | 2004-03-29 | 2005-11-10 | Hoya Corp | Method of peeling positive resist film, method of manufacturing exposure mask, and resist peeling device |
| CN101331811A (en) * | 2005-12-20 | 2008-12-24 | 三菱瓦斯化学株式会社 | Composition for removing residue from wiring board and cleaning method |
| CN101443886A (en) * | 2006-05-30 | 2009-05-27 | Hoya株式会社 | Resist film peeling method, mask blank manufacturing method and transfer mask manufacturing method |
| EP1975987A2 (en) * | 2007-03-31 | 2008-10-01 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
| CN101459038A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Semi-conductor substrate cleaning method |
| CN102540775A (en) * | 2010-12-27 | 2012-07-04 | 无锡华润上华科技有限公司 | Method for removing photoresist of silicide protection layer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111235906A (en) * | 2020-01-16 | 2020-06-05 | 浙江稽山印染有限公司 | Dyeing process of suede nap |
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| CN105045051B (en) | 2016-06-01 |
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