CN105045051B - The minimizing technology of photoresist material - Google Patents
The minimizing technology of photoresist material Download PDFInfo
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- CN105045051B CN105045051B CN201510521796.XA CN201510521796A CN105045051B CN 105045051 B CN105045051 B CN 105045051B CN 201510521796 A CN201510521796 A CN 201510521796A CN 105045051 B CN105045051 B CN 105045051B
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Abstract
The present invention discloses the minimizing technology of photoresist material, comprises the following steps: (1) uses wet etching to remove photoresist material; (2) the photoresist material residual of acid solution wash fibre faceplate is used; (3) hot alkaline solution is added, it may also be useful to alkaline solution washs; (4) fibre faceplate using alkaline solution to wash is put into water, continue to lead to into ozone; (5) chlorine water is added; (6) organic solvent is used to soak. The present invention can remove photoresist material top layer and bottom part respectively, thoroughly removes the photoresist material on fibre faceplate.
Description
Technical field
The invention belongs to field of semiconductor manufacture, it is specifically related to the minimizing technology of photoresist material.
Background technology
Photoresist material also known as photo-resist, the mixing liquid to photaesthesia being made up of photosensitive resin, sensitizing agent and solvent three kinds of main components. Photoresist material should have smaller surface tension, makes photoresist material have good mobility and covering. After illumination, there is photocuring reaction so that the physicals of this kind of material in photosensitive resin, particularly considerable change occurs for solvability, affinity etc. in exposure region very soon. Photoresist material is extensively for the process such as manufacture and plate making of printed wiring and unicircuit. The technology of photoresist material is complicated, and kind is more. According to its chemical reaction mechanism and development principle, negativity glue and positive photoresist two class can be divided. What form soluble material after illumination is negativity glue; Otherwise, it is insoluble to some solvent, what become soluble material after illumination is positive photoresist. Utilize this kind of performance, by photoresist material making coatings, just can at the circuitous pattern needed for silicon chip surface etching.
Based on the chemical structure of photosensitive resin, photoresist material can be divided into three types. 1. photo-polymerization type, adopts vinyl monomer, generates free radical under light action, and free radical is trigger monomer polymerization further again, finally generates polymkeric substance, has the advantages that to form erect image. 2. photolysis type, adopts the material containing nitrine quinones, after illumination, photolysis reactions can occur, turn into from oil soluble water-soluble, it is possible to make positive photoresist. 3. photo-crosslinking type, adopts polyvinyl alcohol laurate etc. as photochromics, under the effect of light, double bond in its molecule is opened, and makes to occur between chain and chain to be cross-linked, and forms a kind of insoluble reticulated structure, and playing effect against corrosion, this is a kind of typical negative photoresist. Namely the product K PR glue of Kodak belong to this type of. Photosensitive glue is adopted to form required pattern by modes such as exposure, development and etchings on each Rotating fields face. When carrying out later layer and process, it is necessary to the photoresist material after front once use is removed completely.
In prior art, remove method mainly ashing and the Whote-wet method cleaning of photoresist material. In removal process, it is easy to fibre faceplate material is caused damage, simultaneously, it is necessary to frequently change scavenging solution. In addition, the vitriol oil used in prior art, can only remove photoresist material top layer, can not thoroughly remove photoresist material.
Summary of the invention
It is an object of the invention to the minimizing technology of a kind of photoresist material, comprise the following steps:
(1) wet etching is used to remove photoresist material;
(2) the photoresist material residual of acid solution wash fibre faceplate is used;
(3) hot alkaline solution is added, it may also be useful to alkaline solution washs;
(4) fibre faceplate using alkaline solution to wash is put into water, continue to lead to into ozone;
(5) chlorine water washing is put into;
(6) organic solvent is used to soak.
Described acid solution is hypochlorous acid solution, perchloric acid solution, hydrofluoric acid solution or salpeter solution.
Described alkaline solution is one or more in sodium hydroxide solution, potassium hydroxide solution and ammonia soln.
The temperature adding hot alkaline solution is 70-90 DEG C, it may also be useful to alkaline solution washs more than 10 minutes.
The time leading to ozone is more than 20 minutes.
After adding chlorine water, react more than 10 minutes.
Described organic solvent is one or both in normal hexane and N-N dimethyl formamide (DMF).
The time using organic solvent to soak is more than 1 hour.
The temperature using organic solvent to soak is 40-55 DEG C.
Invention employs wet etching and removes photoresist material, complex acid washing simultaneously, neutralizing treatment and oxidation removal step, and then uses organic solvent to soak, it is possible to remove photoresist material top layer and bottom part respectively, thoroughly removes the photoresist material on fibre faceplate. It is effective that the present invention removes photoresist material, by the setting of temperature and time, reaches best removal effect, simultaneously that fiber panel material damage is little, and washings can repeatedly Reusability.
Embodiment
Embodiment 1
(1) wet etching is used to remove photoresist material;
(2) working concentration is the photoresist material residual of the hypochlorous acid solution washing fibre faceplate of 20%;
(3) sodium hydroxide solution to 70 DEG C that concentration is 9%, washing by soaking is heated;
(4) fibre faceplate that washed of sodium hydroxide solution will be used to put into water, continue to lead to into ozone 20 minutes;
(5) put into concentration be 26% chlorine water washing 10 minutes;
(6) use normal hexane to soak 1 hour in 40 DEG C, take out and use clear water to clean, dry.
Embodiment 2
(1) wet etching is used to remove photoresist material;
(2) working concentration is the photoresist material residual of the perchloric acid solution washing fibre faceplate of 50%;
(3) 10% potassium hydroxide solution to 90 DEG C that concentration is is heated, washing by soaking;
(4) fibre faceplate that washed of potassium hydroxide solution will be used to put into water, continue to lead to into ozone 25 minutes;
(5) put into concentration be 25% chlorine water washing 20 minutes;
(6) use N-N dimethyl formamide to soak 1.5 hours in 45 DEG C, take out and use clear water to clean, dry.
Embodiment 3
(1) wet etching is used to remove photoresist material;
(2) working concentration is the photoresist material residual of the hydrofluoric acid solution washing fibre faceplate of 20%;
(3) 8% potassium hydroxide, the sodium hydroxide mixed ammonium/alkali solutions to 80 DEG C that concentration is, washing by soaking is heated;
(4) fibre faceplate that washed of mixed ammonium/alkali solutions will be used to put into water, continue to lead to into ozone 22 minutes;
(5) put into concentration be 20% chlorine water washing 15 minutes;
(6) use N-N dimethyl formamide to soak 1 hour in 55 DEG C, take out and use clear water to clean, dry.
Embodiment 4
(1) wet etching is used to remove photoresist material;
(2) working concentration is the photoresist material residual of the salpeter solution washing fibre faceplate of 30%;
(3) heat concentration be 30% ammonia soln to 85 DEG C, washing by soaking;
(4) fibre faceplate that washed of ammonia soln will be used to put into water, continue to lead to into ozone 22 minutes;
(5) put into concentration be 23% chlorine water washing 15 minutes;
(6) use normal hexane, N-N dimethyl formamide mixed solvent (volume ratio is 1:3) to soak fibre faceplate 1 hour in 50 DEG C, take out and use clear water to clean, dry.
Above-mentioned detailed explanation is the concrete explanation for one of them possible embodiments of the present invention, this embodiment and be not used to limit the present invention patent scope, all the present invention of disengaging do equivalence enforcement or change, all should be contained in the scope of technical solution of the present invention.
Claims (1)
1. the minimizing technology of a photoresist material, it is characterised in that, comprise the following steps:
Wet etching is used to remove photoresist material;
Use the photoresist material residual of acid solution wash fibre faceplate;
Add hot alkaline solution, it may also be useful to alkaline solution washs;
The fibre faceplate using alkaline solution to wash is put into water, continues to lead to into ozone;
Put into chlorine water washing;
Use organic solvent soaks;
Wherein, described acid solution is hypochlorous acid solution, perchloric acid solution or salpeter solution;
Described alkaline solution is one or more in sodium hydroxide solution, potassium hydroxide solution and ammonia soln;
The temperature adding hot alkaline solution is 70-90 DEG C, it may also be useful to alkaline solution washs more than 10 minutes;
Leading to the time into ozone is 20-25 minute;
After adding chlorine water, the time of reaction is 10-20 minute;
Described organic solvent is one or both in normal hexane and N-N dimethyl formamide;
The time using organic solvent to soak is 1-1.5 hour;
The temperature using organic solvent to soak is 40-55 DEG C.
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| CN201510521796.XA CN105045051B (en) | 2015-08-24 | 2015-08-24 | The minimizing technology of photoresist material |
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| CN201510521796.XA CN105045051B (en) | 2015-08-24 | 2015-08-24 | The minimizing technology of photoresist material |
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| CN105045051A CN105045051A (en) | 2015-11-11 |
| CN105045051B true CN105045051B (en) | 2016-06-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2000147793A (en) * | 1998-11-12 | 2000-05-26 | Mitsubishi Electric Corp | Method for removing photoresist film and apparatus therefor |
| CN1774793A (en) * | 2003-04-16 | 2006-05-17 | 积水化学工业株式会社 | Resist stripping method and device |
| JP2005317929A (en) * | 2004-03-29 | 2005-11-10 | Hoya Corp | Method of peeling positive resist film, method of manufacturing exposure mask, and resist peeling device |
| KR101349491B1 (en) * | 2005-12-20 | 2014-01-08 | 미츠비시 가스 가가쿠 가부시키가이샤 | Composition for removing residue from wiring board and cleaning method |
| JP5384106B2 (en) * | 2006-05-30 | 2014-01-08 | Ｈｏｙａ株式会社 | Resist film peeling method, mask blank manufacturing method, and transfer mask manufacturing method |
| KR20100015974A (en) * | 2007-03-31 | 2010-02-12 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Methods for stripping material for wafer reclamation |
| CN101459038B (en) * | 2007-12-13 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | Semi-conductor substrate cleaning method |
| CN102540775A (en) * | 2010-12-27 | 2012-07-04 | 无锡华润上华科技有限公司 | Method for removing photoresist of silicide protection layer |
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