CN105023811B - 具有内部导电通道的mems开关 - Google Patents
具有内部导电通道的mems开关 Download PDFInfo
- Publication number
- CN105023811B CN105023811B CN201510197325.8A CN201510197325A CN105023811B CN 105023811 B CN105023811 B CN 105023811B CN 201510197325 A CN201510197325 A CN 201510197325A CN 105023811 B CN105023811 B CN 105023811B
- Authority
- CN
- China
- Prior art keywords
- substrate
- contact
- mems switch
- conductor
- insulating barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000004020 conductor Substances 0.000 claims abstract description 77
- 239000000463 material Substances 0.000 claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 25
- 239000011521 glass Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000033001 locomotion Effects 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000012777 electrically insulating material Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims 2
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 238000013461 design Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- -1 aluminium-germanium Chemical compound 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000979 retarding effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00341—Processes for manufacturing microsystems not provided for in groups B81C1/00023 - B81C1/00261
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/092—Buried interconnects in the substrate or in the lid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/262,188 US9748048B2 (en) | 2014-04-25 | 2014-04-25 | MEMS switch |
US14/262,188 | 2014-04-25 | ||
US14/278,362 | 2014-05-15 | ||
US14/278,362 US9583294B2 (en) | 2014-04-25 | 2014-05-15 | MEMS swtich with internal conductive path |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105023811A CN105023811A (zh) | 2015-11-04 |
CN105023811B true CN105023811B (zh) | 2018-02-23 |
Family
ID=54261918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510197325.8A Active CN105023811B (zh) | 2014-04-25 | 2015-04-24 | 具有内部导电通道的mems开关 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9583294B2 (zh) |
CN (1) | CN105023811B (zh) |
DE (1) | DE102015106260A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10224164B2 (en) * | 2011-09-02 | 2019-03-05 | Cavendish Kinetics, Inc. | Merged legs and semi-flexible anchoring having cantilevers for MEMS device |
US9748048B2 (en) | 2014-04-25 | 2017-08-29 | Analog Devices Global | MEMS switch |
CN105575734B (zh) * | 2015-12-23 | 2018-11-06 | 北京时代民芯科技有限公司 | 一种射频mems开关及其制造方法 |
CN105621351B (zh) * | 2015-12-24 | 2017-11-07 | 中国电子科技集团公司第五十五研究所 | 一种rf mems开关的圆片级封装方法 |
JP2019503057A (ja) | 2016-02-04 | 2019-01-31 | アナログ・デヴァイシズ・グローバル | 能動的開放型memsスイッチデバイス |
US10825628B2 (en) | 2017-07-17 | 2020-11-03 | Analog Devices Global Unlimited Company | Electromagnetically actuated microelectromechanical switch |
WO2020239930A1 (de) * | 2019-05-28 | 2020-12-03 | B&R Industrial Automation GmbH | Transporteinrichtung |
US11501928B2 (en) | 2020-03-27 | 2022-11-15 | Menlo Microsystems, Inc. | MEMS device built on substrate with ruthenium based contact surface material |
US11476045B2 (en) | 2020-05-29 | 2022-10-18 | Analog Devices International Unlimited Company | Electric field grading protection design surrounding a galvanic or capacitive isolator |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6384353B1 (en) * | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
CN102394199A (zh) * | 2010-06-17 | 2012-03-28 | 通用电气公司 | 具有布置成传导开关电流的衬底的mems开关阵列 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4030943A (en) | 1976-05-21 | 1977-06-21 | Hughes Aircraft Company | Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits |
JPS6341049A (ja) | 1986-08-05 | 1988-02-22 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | ヴアイア接続を有する多層回路 |
US6115231A (en) | 1997-11-25 | 2000-09-05 | Tdk Corporation | Electrostatic relay |
US6046659A (en) | 1998-05-15 | 2000-04-04 | Hughes Electronics Corporation | Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications |
US6153839A (en) | 1998-10-22 | 2000-11-28 | Northeastern University | Micromechanical switching devices |
US6377438B1 (en) | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
US6853072B2 (en) | 2002-04-17 | 2005-02-08 | Sanyo Electric Co., Ltd. | Semiconductor switching circuit device and manufacturing method thereof |
US7352266B2 (en) * | 2004-02-20 | 2008-04-01 | Wireless Mems, Inc. | Head electrode region for a reliable metal-to-metal contact micro-relay MEMS switch |
WO2009147600A1 (en) | 2008-06-06 | 2009-12-10 | Nxp B.V. | Mems switch and fabrication method |
US7943411B2 (en) | 2008-09-10 | 2011-05-17 | Analog Devices, Inc. | Apparatus and method of wafer bonding using compatible alloy |
US8487386B2 (en) | 2009-06-18 | 2013-07-16 | Imec | Method for forming MEMS devices having low contact resistance and devices obtained thereof |
US8921144B2 (en) * | 2010-06-25 | 2014-12-30 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
US20130140155A1 (en) | 2011-02-14 | 2013-06-06 | Ilkka Urvas | MEMS Switch Having Cantilevered Actuation |
-
2014
- 2014-05-15 US US14/278,362 patent/US9583294B2/en active Active
-
2015
- 2015-04-23 DE DE102015106260.7A patent/DE102015106260A1/de active Pending
- 2015-04-24 CN CN201510197325.8A patent/CN105023811B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6384353B1 (en) * | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
CN102394199A (zh) * | 2010-06-17 | 2012-03-28 | 通用电气公司 | 具有布置成传导开关电流的衬底的mems开关阵列 |
Also Published As
Publication number | Publication date |
---|---|
DE102015106260A1 (de) | 2015-10-29 |
CN105023811A (zh) | 2015-11-04 |
US9583294B2 (en) | 2017-02-28 |
US20150311021A1 (en) | 2015-10-29 |
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Address after: Limerick Patentee after: Analog Devices Global Unlimited Co. Address before: Limerick Patentee before: Analog Devices Global |
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TR01 | Transfer of patent right |
Effective date of registration: 20210629 Address after: Limerick Patentee after: ANALOG DEVICES INTERNATIONAL UNLIMITED Co. Address before: Limerick Patentee before: Analog Devices Global Unlimited Co. |
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TR01 | Transfer of patent right |