CN105006490A - Diode with high anti-surge-current capability - Google Patents
Diode with high anti-surge-current capability Download PDFInfo
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- CN105006490A CN105006490A CN201510448585.8A CN201510448585A CN105006490A CN 105006490 A CN105006490 A CN 105006490A CN 201510448585 A CN201510448585 A CN 201510448585A CN 105006490 A CN105006490 A CN 105006490A
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- type doped
- diode
- doped region
- epitaxial loayer
- doped regions
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- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 238000001465 metallisation Methods 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 210000000746 body region Anatomy 0.000 abstract 2
- 230000005684 electric field Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- IYYIVELXUANFED-UHFFFAOYSA-N bromo(trimethyl)silane Chemical compound C[Si](C)(C)Br IYYIVELXUANFED-UHFFFAOYSA-N 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a diode with high anti-surge-current capability. The diode comprises an N+ substrate. The back surface of the N+ substrate is provide with a metalized cathode, and the front surface of the N+ substrate is provided with an N- epitaxial layer. The upper surface of the N- epitaxial layer is provided with an oxide layer. Polycrystalline silicon is arranged on the oxide layer. The top part of the N- epitaxial layer is provided with two P-type doped regions. The side edges of the two P-type doped regions are respectively provided with an N-type doped region. A metalized anode is arranged at the top layer of a device. A P body region is respectively arranged below the two P-type doped regions. The two P body regions are connected with the metalized anode via the P-type doped regions. The metalized anode covers the upper surface of the polycrystalline silicon, the P-type doped regions, the N-type doped regions and the N- epitaxial layer. A P-type doped surge current discharge channel is arranged between the two P-type doped regions and is also called a plug region. The technical problems in the prior art that the diode in an automobile generator rectifier bridge is poor in anti-surge-current capability can be solved.
Description
Technical field
The invention belongs to technical field of semiconductor device, particularly relate to a kind of diode with high Antisurge current ability.
Background technology
In electronic system, diode is one of the most frequently used base electronic components and parts.When adding a forward voltage to diode, conducting opened by device, has electric current to flow through, and produce little forward voltage drop in device; When adding a reverse voltage to diode, diode ends, and only has and littlely pass through to negligible leakage current in device.This phenomenon is the unilateal conduction characteristic of diode.Therefore diode can be used as rectifier use.
In nowadays motor vehicle, automobile current generator rectifier bridge used is formed by multiple diodes in parallel, actual use in certainly need the operating efficiency of increase generator to save the energy, therefore with regard to need conduction voltage drop lower diode to reduce the loss of rectifier bridge.Throw load situation etc. accidental when considering the hot environment of generator operation in addition and work, diode also needs to have low high temperature reverse leakage current, and has the features such as high Antisurge current ability.The dynamic avalanche energy of diode is the major parameter embodying the resistance to throw load ability of generator.And dynamic avalanche energy directly perceived embodiment is surge current.Therefore diode is as the main devices of the rectifier bridge of automobile current generator front end, and the quality of its Antisurge current ability directly has influence on the reliability of automobile current generator.
PiN diode and Schottky diode are two main quasi-tradition rectifier diodes.PiN diode good stability, under working in large voltage, reverse leakage is little, and under high temperature, leakage current is more much smaller than Schottky diode; But device cut-in voltage is comparatively large, when making devices function, conduction loss is comparatively large, and makes the device turn-off time longer due to sub-storage effect less, and turn-off power loss is larger.
Schottky diode is that the metal-semiconductor junction principle utilizing metal and semiconductor to be formed makes, and forward cut-in voltage is less, and Schottky diode is majority carrier device simultaneously, and not few sub-storage effect, so turn-off power loss is very little; But the drift zone resistance of its series connection has the contradictory relation becoming 2.5 powers with device withstand voltage, hinder the application of the high-voltage great-current of Schottky diode, the hot properties of Schottky diode extreme difference, large leakage current and soft breakdown characteristic, make silica-based Schottky diode usually can only be operated in the voltage range of below 250V in addition.
In order to improve diode behavior, researchers have proposed a kind of diode structure with the low turn-on voltage of p type buried layer, see ISPSD meeting articles " Innovative Buried Layer Rectifier with 0.1V Ultra-low Forward Conduction Voltage " in 2012 and Chinese invention patent CN 102709317A " a kind of low turn-on voltage diode ", in two sections of documents, the depletion region of the PN junction diode that author utilizes p type buried layer and N-type drift region to be formed reduces and controls diode with increase and open and turn off, device is made just to have current channel under very little forward voltage.
Be Schottky contacts above JFET district in Chinese invention patent CN 102709317A, this can improve the Antisurge current ability of device to a certain extent, but simultaneously reverse withstand voltage time can produce larger leakage current.And in ISPSD2012 meeting article, above JFET district, be the MOS structure of oxide layer and polysilicon, this can greatly reduce reverse withstand voltage time leakage current, the electron accumulation district simultaneously produced below polysilicon during forward conduction is conducive to the forward conduction voltage drop reducing device, but the Antisurge current ability of this structure can be slightly weak.Based on this, we propose a kind of diode with high Antisurge current ability.
Summary of the invention
The technical problem to be solved in the present invention: a kind of diode with high Antisurge current ability is provided, the diode used with the automobile generator rectifier bridge solving prior art is due to Antisurge current ability, because electromagnetic interference produces in car running process, particularly during storage battery broken string throw load, the transient voltage that produces is high and produce instantaneous large surge current and burn out diode component, makes the technical problems such as automobile current generator cisco unity malfunction.
Technical solution of the present invention:
Have a diode for high Antisurge current ability, it comprises N
+substrate, N
+substrate back is metallization negative electrode, N
+substrate face is N
-epitaxial loayer, N
-epitaxial loayer upper surface has oxide layer, and oxide layer is polysilicon, N
-epitaxial loayer top has two P type doped regions, two P type doped region sides have N-type doped region respectively, metallization anode is positioned at device top layer, below two P type doped regions, also there is a P tagma respectively, two P tagmas are connected with metallization anode by P type doped region, and metallization anode covers polysilicon, P type doped region, N-type doped region and N
-the upper surface of epitaxial loayer, two P tagmas and the N between them
-epitaxial loayer forms a junction field effect transistor district, is the surge current leakage path of P type doping between two P type doped regions.
The lateral dimension in P tagma is greater than the lateral dimension of P type doped region, two P tagmas and the N between them
-epitaxial loayer forms a junction field effect transistor district.
Metallization negative electrode and metallization anode are aluminium, copper, tungsten or conductive metal material.
The semi-conducting material of described diode is body silicon, carborundum, GaAs, indium phosphide or germanium silicon.
Beneficial effect of the present invention:
A kind of diode with high Antisurge current ability provided by the invention, forms independently plug district by doping, using the leakage path as surge current outside the active area of device.When device is in normal cut-off state, in device, maximum electric field is positioned at PN junction place, and after device breakdown, electric current flow to metal anode by P district, can not produce damaging influence to device.But during devices function when running into due to automobile current generator throw load or other electronic jamming, device produces a transient high voltage or transient high-current, this all can cause device inside to produce a larger surge current, now due to the free charge effect of space charge region, larger surge current can make the Electric Field Distribution of device inside change, and electric current is larger, and doping content is lower, free charge effect is more obvious, and Electric Field Distribution changes more.Electric current increase causes the increase of electric field, when electric current acquires a certain degree, space charge region will occupy whole N-epi region, and form another peak electric field at the N-N+ knot place of N-epitaxial loayer and N+ substrate, this peak electric field is along with until there is avalanche breakdown in the increase continuation increase of surge current, this is just by current effect unstable for formation one, because the snowslide of N-N+ knot is caused by electronics, and the impact ionization rate of electronics is higher than hole, so it is in the low increase that just there will be larger current after the match, cause in device, form unstable electric current silk, and p district, device cellular region and metal anode contact area relatively little, device is caused to burn inefficacy at this formation focus possibly if this big current flows out from the P district in device active region entirely.The present invention by the extra PN junction plug district introduced for the surge current produced because of second breakdown or other reasons provides leakage path, reduce the possibility that device burns, enhance the reliability of device, the diode that the automobile generator rectifier bridge solving prior art uses is due to Antisurge current ability, because electromagnetic interference produces in car running process, particularly during storage battery broken string throw load, the transient voltage that produces is high and produce instantaneous large surge current and burn out diode component, makes the technical problems such as automobile current generator cisco unity malfunction.
Accompanying drawing explanation
Fig. 1 is the longitudinal sectional drawing of diode of the present invention.
Embodiment
Have a diode (see figure 1) for high Antisurge current ability, it comprises N
+substrate 2, N
+substrate 2 back side is metallization negative electrode 1, N
+substrate 2 front is N
-epitaxial loayer 3, N
-epitaxial loayer 3 upper surface has oxide layer 9, is polysilicon 10, N above oxide layer 9
-epitaxial loayer 3 top has two P type doped regions 5, two P type doped region 5 sides have N-type doped region 4 respectively, metallization anode 6 is positioned at device top layer, below two P type doped regions 5, also there is a P tagma 7 respectively, two P tagmas 7 are connected with metallization anode 6 by P type doped region 5, and metallization anode 6 covers polysilicon 10, P type doped region 5, N-type doped region 4 and N
-the upper surface of epitaxial loayer 3, two P tagmas and the N between them
-epitaxial loayer forms the surge current leakage path for the doping of P type between P type doped region, 8, two, a junction field effect transistor district, also cries plug district.
N-type doped region 4 is N-type heavily doped region, and doping content is 10
19/ cm
-3-10
21/ cm
-3; P type doped region 5 is P type heavily doped region, and doping content is 10
19/ cm
-3-10
21/ cm
-3; P tagma 7 is below heavily doped N-type doped region 4 with P type heavily doped region, and junction depth is 0.5 μm, and oxide layer 9 is thin oxide layer, and thickness is 5-15nm.
The lateral dimension in P tagma is greater than the lateral dimension of P type doped region, two P tagmas and the N between them
-epitaxial loayer forms a junction field effect transistor district.
Metallization negative electrode and metallization anode are aluminium, copper, tungsten or conductive metal material.
The semi-conducting material of described diode is body silicon, carborundum, GaAs, indium phosphide or germanium silicon.
In technical solution of the present invention, 1, current drain plug region 11 connects two P type doped regions 5; 2, plug region is not limited to BLR(Buried Layer Rectifier as surge current leakage path) in buried regions low-voltage diode, can be used for MCD(MOS Control Diode equally, MOS controls diode), TMBS(Trench MOS Barrier Schottky Rectifier, groove MOS type Schottky barrier rectifier) etc. various different structure diode in.
Concrete methods of realizing of the present invention is identical with prior art diode cellular region manufacture method, and current drain plug district manufactures can be formed with P type doped region simultaneously, or making mask plate makes ion implantation separately, and high temperature knot is formed.
Claims (4)
1. have a diode for high Antisurge current ability, it comprises N
+substrate (2), is characterized in that: N
+substrate (2) back side is metallization negative electrode (1), N
+substrate (2) front is N
-epitaxial loayer (3), N
-epitaxial loayer (3) upper surface has oxide layer (9), and oxide layer (9) top is polysilicon (10), N
-epitaxial loayer (3) top has two P type doped regions (5), two P type doped region (5) sides have N-type doped region (4) respectively, metallization anode (6) is positioned at device top layer, two P type doped region (5) belows also have a P tagma (7) respectively, two P tagmas (7) are connected with metallization anode (6) by P type doped region (5), and metallization anode (6) covers polysilicon (10), P type doped region (5), N-type doped region (4) and N
-the upper surface of epitaxial loayer (3), two P tagmas (7) and the N between them
-epitaxial loayer (3) forms a junction field effect transistor district (8), is the surge current leakage path (11) of P type doping between two P type doped regions (5).
2. a kind of diode with high Antisurge current ability according to claim 1, is characterized in that: the lateral dimension of P tagma (7) is greater than the lateral dimension of P type doped region (5), two P tagmas (7) and the N between them
-epitaxial loayer (3) forms a junction field effect transistor district (8).
3. a kind of diode with high Antisurge current ability according to claim 1 and 2, is characterized in that: metallization negative electrode (1) and metallization anode (6) are aluminium, copper, tungsten or conductive metal material.
4. a kind of diode with high Antisurge current ability according to claim 1 and 2, is characterized in that: the semi-conducting material of described diode is body silicon, carborundum, GaAs, indium phosphide or germanium silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510448585.8A CN105006490B (en) | 2015-07-28 | 2015-07-28 | A kind of diode with high Antisurge current ability |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510448585.8A CN105006490B (en) | 2015-07-28 | 2015-07-28 | A kind of diode with high Antisurge current ability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105006490A true CN105006490A (en) | 2015-10-28 |
| CN105006490B CN105006490B (en) | 2018-10-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510448585.8A Active CN105006490B (en) | 2015-07-28 | 2015-07-28 | A kind of diode with high Antisurge current ability |
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| Country | Link |
|---|---|
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533859A (en) * | 2008-03-12 | 2009-09-16 | 三洋电机株式会社 | Diode |
| CN102084487A (en) * | 2008-05-21 | 2011-06-01 | 克里公司 | Junction barrier schottky diodes with current surge capability |
| CN102709317A (en) * | 2012-06-07 | 2012-10-03 | 电子科技大学 | Low-threshold voltage diode |
| CN204946908U (en) * | 2015-07-28 | 2016-01-06 | 李泽宏 | A kind of diode with high Antisurge current ability |
-
2015
- 2015-07-28 CN CN201510448585.8A patent/CN105006490B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533859A (en) * | 2008-03-12 | 2009-09-16 | 三洋电机株式会社 | Diode |
| CN102084487A (en) * | 2008-05-21 | 2011-06-01 | 克里公司 | Junction barrier schottky diodes with current surge capability |
| CN102709317A (en) * | 2012-06-07 | 2012-10-03 | 电子科技大学 | Low-threshold voltage diode |
| CN204946908U (en) * | 2015-07-28 | 2016-01-06 | 李泽宏 | A kind of diode with high Antisurge current ability |
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| Publication number | Publication date |
|---|---|
| CN105006490B (en) | 2018-10-30 |
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Effective date of registration: 20231211 Address after: 550081 Guiyang National High tech Industrial Development Zone National High tech Zone Jinyang Science and Technology Industrial Park Standard Factory Building No.1, 1st Floor, Guiyang City, Guizhou Province Patentee after: GUIZHOU E-CHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Address before: No. 12 Duyun Road, Jinyang Science and Technology Industrial Park, National High tech Development Zone, Guiyang City, Guizhou Province, 550025 Patentee before: Li Zehong |
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