CN104981086B - Intensified radio-frequency inductively coupled plasma electric discharge device - Google Patents

Intensified radio-frequency inductively coupled plasma electric discharge device Download PDF

Info

Publication number
CN104981086B
CN104981086B CN201510373104.1A CN201510373104A CN104981086B CN 104981086 B CN104981086 B CN 104981086B CN 201510373104 A CN201510373104 A CN 201510373104A CN 104981086 B CN104981086 B CN 104981086B
Authority
CN
China
Prior art keywords
hole
end cover
electric discharge
quartz glass
glass tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510373104.1A
Other languages
Chinese (zh)
Other versions
CN104981086A (en
Inventor
聂秋月
韩雪
张仲麟
王志斌
孔繁荣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harbin Institute of Technology
Original Assignee
Harbin Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harbin Institute of Technology filed Critical Harbin Institute of Technology
Priority to CN201510373104.1A priority Critical patent/CN104981086B/en
Publication of CN104981086A publication Critical patent/CN104981086A/en
Application granted granted Critical
Publication of CN104981086B publication Critical patent/CN104981086B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Plasma Technology (AREA)

Abstract

Intensified radio-frequency inductively coupled plasma electric discharge device, belongs to the applied technical field of low temperature plasma, and the present invention weaker necessarily causes the problem of plasma density is extremely difficult to very high numerical value to solve existing ICP electric discharge devices due to colliding.The present invention includes upper and lower end cap, cylinder quartz glass tube, multiple bolt of long stems, interior electrode coil and external electrode coil;Upper and lower end cap and cylinder quartz glass tube collectively forms vacuum cavity gas chamber, and upper end cover peripheral rim portion is along the circumferential direction evenly equipped with multiple upper end mounting holes, is provided with interior loop mounting hole and air admission hole;Bottom end cover peripheral rim portion is along the circumferential direction evenly equipped with multiple lower end mounting holes, is provided with measured hole and vacuumizes hole, and measured hole is used to place probe class measurement part;Vacuumize hole and pumped vacuum systems is connected by vacuum corrugated pipe;The outer round surface of cylinder quartz glass tube is provided with external electrode coil;Vacuum chamber plenum interior is provided with interior electrode coil, and at interior loop mounting hole.

Description

Intensified radio-frequency inductively coupled plasma electric discharge device
Technical field
It can be used for low pressure to produce large area, stable plasma discharge reactor the present invention relates to one kind, belong to low The applied technical field of isothermal plasma.
Background technology
Material surface modifying and process of surface treatment are widely used to the process industry field in the whole world, traditional technique Mainly include:Thermal spraying treatment, laser surface modification processing, galvanoplastic, electroless plating method and chemical transferring film method, have obtained length Foot development.But there is special construction and the material of property for some, such as in processing super large-scale integration system Make in technique, it is desirable to the groove width of nanometer scale is etched on large area chip, and with growing technical requirements, increasingly Thin etching line width is difficult to realize for traditional handicraft means.Therefore a kind of new technology --- plasma treatment technique Arise at the historic moment.At present in super large-scale integration manufacturing process, the process for having more than 1/3rd is by plasma What lithographic technique was completed.
The low-temp plasma source industrially commonly used at present mainly has:Radio frequency capacitively coupled plasma source (Capacitively Coupled Plasma, CCP), Ecr plasma source (Electron Cyclotron Resonance, ECR), helicon wave plasma source (Helical Resonance, HR) and radio frequency induction coupled plasma Source (Inductively Coupled Plasma, ICP) etc..Wherein radio frequency capacitively coupled plasma source can be in two plate electrodes Between formed a uniform Electric Field Distribution, so as to produce the equally distributed plasma of large area, provided for uniform lithographic technique Necessary condition.However, for Single Frequency C CP sources, the plasma density that it is produced is low, and etch rate is slow, while plasma Density is unable to independent control with ion energy, in order to improve plasma density, input power certainly will be improved, so as to cause sheath Layer potential increases with ion energy with the increase of power, causes high-energy ion bombardment chip, causes wafer operations, while high Energy ion sputtering chamber wall, the material sputtered out can be polluted to chip.Want independent control plasma density with Ion energy is driven jointly, it is necessary to carry out multiple power sources (Multi-CCP), but recent studies suggest that multiple power sources Work has galvanomagnetic-effect simultaneously, directly affects the radially uniform distribution of plasma density.Electron cyclotron resonance plasma Body can be compared with high-density plasma be produced, while having higher etch rate, while being capable of independent control under low pressure Ion energy, but field coil is applied outside Ecr plasma source device needs, cause installation cost to greatly improve, And control is complicated.Simultaneously because the introducing in magnetic field, ECR sources are difficult to produce the uniform plasma of large area.Due to helicon etc. Plasma source needs also exist for applying magnetic field outside introducing, although reduced in cost compared with ECR sources, but still is difficult that generation large area is uniform Plasma.
Radio frequency induction coupled plasma source (ICP source) is that the one kind put forward the nineties in last century can produce high density etc. Ion body device, it has advantages below:1st, compared with CCP sources, ICP source need not use high-voltage radio-frequency electrode, and can More highdensity plasma is produced under the conditions of lower radio-frequency power, so as to mitigate common pollution in capacitive coupling; 2nd, compared with ECR sources, ICP source device is fairly simple, it is not necessary to apply magnetic field means outside bulky direct current;3rd, compared with HR sources Compared with the coil that ICP source is used is fairly simple, it is not necessary to relation proportional to the wavelength of rf wave, and can be a wide range of interior Obtain uniform plasma;4th, in terms of independent control plasma density and energy, ICP source and ECR sources and Helicon sources It is similar, it is biased on the chip bench in discharge cavity room, it becomes possible to which ion energy is modulated.In a word, ICP source have etc. Plasma density is high, large-area uniformity is good, low electric discharge air pressure, plasma density and incide the ion energy energy on substrate The advantages of enough independent control and good anisotropy.Due to above-mentioned advantage, ICP source is widely used in semiconductor manufacturing and material Expect scientific domain etc..
ICP source mainly has two types:One kind is the planar coil of the similar mosquito-repellent incense shape of planar coil ICP source, i.e., one Above the medium window for being seated in electric discharge chamber roof;Another is cylindrical coil ICP source, and its coil is wrapped in the stone of cylinder The side wall of English electric discharge chamber.In order to produce the plasma that density is bigger, people are improved to ICP source, are generally adopted Means are to change discharge coil facet position and vacuum chamber profile, or introduce magnetic field come about beam electrons to improve plasma Density and control velocity of electrons direction, obtain some effects.But haveed the shortcomings that between them one it is common:Plasma Can not be balanced between volume density and air pressure, in order to ensure the uniformity of plasma density, the electric discharge air pressure of ICP electric discharge devices leads to Normal very low, only 0.1~1Pa, under low air pressure condition, the collision between charged particle and neutral particle is very weak, and plasma exists It can realize that collisionless spreads in space, so as to form the plasma distribution of even density.But it is due to the weaker certainty of collision Plasma density is caused to be extremely difficult to very high numerical value.
The content of the invention
The invention aims to solve existing ICP electric discharge devices due to colliding weaker necessarily to cause plasma density very The problem of difficulty reaches very high numerical value exists there is provided a kind of intensified radio-frequency inductively coupled plasma electric discharge device, the device High density, large area, uniform and stable plasma device are obtained compared with (~20Pa) under high pressure conditions.
Intensified radio-frequency inductively coupled plasma electric discharge device of the present invention, it includes upper end cover, bottom end cover, cylinder Quartz glass tube, multiple bolt of long stems, interior electrode coil and external electrode coil;
Upper end cover, bottom end cover and cylinder quartz glass tube collectively form vacuum cavity gas chamber,
Upper end cover is along the circumferential direction evenly equipped with multiple upper end mounting holes, upper end beyond the peripheral rim portion of cylinder quartz glass tube The center of lid, which is provided with interior loop mounting hole, upper end cover, is provided with air admission hole, and the air admission hole connects with vacuum cavity gas chamber It is logical;
Bottom end cover is along the circumferential direction evenly equipped with multiple lower end mounting holes, lower end beyond the peripheral rim portion of cylinder quartz glass tube Cover and be provided with measured hole and vacuumize hole, measured hole is connected with Kong Junyu vacuum cavity gas chamber is vacuumized;Measured hole is used to place Probe class measurement part;Vacuumize hole and pumped vacuum systems is connected by vacuum corrugated pipe;
The outer round surface of cylinder quartz glass tube is provided with external electrode coil;Vacuum chamber plenum interior is provided with interior electrode Coil, and at interior loop mounting hole;
Upper end mounting hole is corresponded by bolt of long stem with lower end mounting hole and is fixedly connected.
Advantages of the present invention:(1) in the case where not sacrificing stability precondition, it is effectively increased plasma density.Through experiment Measurement, under same pressure, power condition, what the plasma density ratio traditional type ICP source that apparatus of the present invention are produced was produced Plasma density is doubled;(2) trip point of E-H patten transformations is substantially reduced, while the trip point drop of H-E snapbacks It is low, it is effectively increased snapback area so that the working range of H patterns is more extensive;(3) can be compared with hyperbar (sub-atmospheric pressure ring Border~100Pa) under work, make electric discharge air pressure range increase;(4) without using magnetic field device is applied outside direct current, cost reduction is also suitable for The demand of engineer applied.
Brief description of the drawings
Fig. 1 is the structural representation of intensified radio-frequency inductively coupled plasma electric discharge device of the present invention;
Fig. 2 is the upper end cover structural representation of Fig. 1 depression angles;
Fig. 3 is the upper end cover structural representation that Fig. 1 looks up angle;
Fig. 4 is upper end cover sectional view;
Fig. 5 is bottom end cover sectional view;
Fig. 6 is the system structure diagram tested using apparatus of the present invention;
Fig. 7 is sharp apparatus of the present invention and plasma density comparative result figure obtained by traditional ICP source.
Embodiment
Embodiment one:Illustrate present embodiment with reference to Fig. 1 to Fig. 5, it is enhanced described in present embodiment to penetrate Frequency inductively coupled plasma electric discharge device, it includes upper end cover 1, bottom end cover 2, cylinder quartz glass tube 3, multiple bolt of long stems 4th, interior electrode coil 5 and external electrode coil 6;
Upper end cover 1, bottom end cover 2 and cylinder quartz glass tube 3 collectively form vacuum cavity gas chamber,
Upper end cover 1 is along the circumferential direction evenly equipped with multiple upper end mounting hole 1- beyond the peripheral rim portion of cylinder quartz glass tube 3 3, the center of upper end cover 1, which is provided with interior loop mounting hole 1-1, upper end cover 1, is provided with air admission hole 1-2, the air admission hole 1-2 is connected with vacuum cavity gas chamber;
Bottom end cover 2 is along the circumferential direction evenly equipped with multiple lower end mounting hole 2- beyond the peripheral rim portion of cylinder quartz glass tube 3 3, measured hole 2-1 is provided with bottom end cover 2 and hole 2-2 is vacuumized, measured hole 2-1 and vacuumize hole 2-2 with vacuum cavity gas chamber Connection;Measured hole 2-1 is used to place probe class measurement part;Vacuumize hole 2-2 and pumped vacuum systems is connected by vacuum corrugated pipe;
Upper end mounting hole 1-3 is corresponded by bolt of long stem 4 with lower end mounting hole 2-3 and is fixedly connected.
Measured hole 2-1 and vacuumize hole 2-2 and can be sealed when not in use with blind plate.
The outer round surface of cylinder quartz glass tube 3 is provided with external electrode coil 6;Vacuum chamber plenum interior is provided with interior electricity Polar curve circle 5, and at interior loop mounting hole 1-1;It is close using cushion rubber and clip between interior electrode coil 5 and vacuum cavity gas chamber It is connected, to ensure the vacuum in air chamber.Two electrodes (internal and external electrode coil) one end connects radio frequency power source, and other end is strict Ground connection.
During work, working gas enters vacuum cavity gas chamber by the air admission hole 1-2 spirts of upper end cover 1, is in frequency 13.56MHz, power is under 0~2000W tunable radio frequency power supply effect, gas part is breakdown so as to produce between making two electrodes The uniform and stable plasma of large-area high-density.
Electric discharge device uses bipolar electrode loop construction, and external electrode coil 6 is wrapped in the cylindrical table of cylinder quartz glass tube 3 Face, interior electrode coil 5 is put into vacuum cavity gas chamber after making from the interior loop mounting hole 1-1 of upper end cover 1,
Interior electrode coil and external electrode coil is ICP source coil, during to ICP source coil input radio frequency power, according to farad The law of electromagnetic induction, the induced field of alternation is produced and parallel to coil by the radio-frequency current of coil in vacuum discharge intracavitary Eddy electric field.Simultaneously as a very big electrical potential difference is there is between the high-pressure side and earth terminal of coil, and coil high-pressure side Equally there is larger potential gradient between vacuum chamber wall, therefore in vacuum chamber in addition to it there is eddy electric field, also exist Electrostatic field axially and radially.The electric discharge in vacuum chamber is produced and maintained by eddy electric field and electrostatic field collective effect Journey, to produce high-density plasma.ICP source electric discharge has different patterns, and one kind is capacitive coupling pattern (Capactive coupled mode, E pattern), its feature is that plasma density is low by (109~1010cm-3), electron temperature Height, luminous intensity is weak;It is another be inductive coupled pattern (Inductive coupled mode, H pattern), its feature for wait from Daughter density height (1011~1012cm-3), electron temperature is low, and luminous intensity is strong.Both of which can be changed mutually, and electric discharge is opened When, main based on E patterns under conditions of radio-frequency power is relatively low, it is H patterns to be discharged with the increase of power by E patten transformations. When ICP source is applied, people wish that electric discharge enters high intensity discharge, i.e. H patterns in advance as far as possible, while making H patterns more Worked in wide power bracket.
Embodiment two:Present embodiment is described further to embodiment one, interior electrode coil 5 and external electrode Coil 6 is made of hollow copper tubing.
The hollow copper tubing two ends of interior electrode coil respectively set a connection terminal, for connecing cold water and and external control system Electrical connection.Two hollow copper electrode interiors are travelled by water for being cooled down to electric discharge.
Embodiment three:Present embodiment is described further to embodiment one, the outside covering of hollow copper tubing For the heat-shrink tube insulated between pipe.
Embodiment four:Present embodiment is described further to embodiment one, the coil turn of interior electrode coil 5 Coil turn of the number more than external electrode coil 6.
Embodiment five:Present embodiment is described further to embodiment one, is set in the lower surface of upper end cover 1 The first toroidal cavity 1-4 is equipped with, the top port for fixing cylinder quartz glass tube 3 is set in the upper surface of bottom end cover 2 There is the second toroidal cavity 2-4, the bottom port for fixing cylinder quartz glass tube 3, sealing part uses epoxy glue seal.
Embodiment six:Present embodiment is described further to embodiment one, the hollow copper of external electrode coil 6 Pipe two ends respectively set a connection terminal 6-1, for connecing cold water and being electrically connected with external control system.
The set-up mode of interior electrode coil 5 is identical with external electrode coil 6.
Embodiment seven:A specific embodiment is provided with reference to Fig. 1 to Fig. 7.
Vacuum cavity gas chamber is changed into jointly by upper end cover 1, bottom end cover 2 and cylinder quartz glass tube 3, cylinder quartz glass tube 3 It is made of external diameter Φ=160mm, wall thickness d=5mm, high h=150mm cylindrical type quartz glass, upper end cover 1 and bottom end cover 2 It is made of diameter of phi=220mm, thickness 5mm No. 304 stainless steel plates of circle, in upper end cover 1, bottom end cover 2 away from edge 20mm The place of putting uniformly opens 8 diameter of phi=6mm circular hole, is fastened using bolt of long stem.In the lower surface of upper end end 1 and upper end cover 2 Upper surface far from there is two thickness at center d=70mm and d=80mm positions be 5mm, a height of 10mm annulus, in two annulus Cylindrical type quartz glass is put, sealing part uses epoxy glue seal, it is ensured that vacuum chamber air-tightness.Open always the center of upper end cover 1 Footpath Φ=40mm circular hole, for placing interior electrode coil 5.Away from placement one diameter of phi=10.5mm at the d=50mm positions of center Air admission hole 1-3 install valve be used for air inlet.Bottom end cover 2 away from center 50mm positions at, symmetrically respectively open an a diameter of Φ=40mm Circular hole, one of them connects high vacuum bellows, and another termination vacuum system of bellows is used to vacuumize, and another hole is used to place The measuring systems such as probe, can be sealed with blind plate when not in use.
Electric discharge device uses bipolar electrode loop construction, and external electrode coil 6 is using number of turn n=3, external diameter Φ=10mm, internal diameter One layer of heat-shrink tube of covering insulated between coil and bolt outside Φ=8mm hollow copper tubing, copper pipe, while being wrapped in circle Outside cylinder quartz glass tube 3;Interior electrode coil 5 uses number of turn n=35, external diameter Φ=3mm, internal diameter Φ=2mm hollow copper tubing, It is coiled between a diameter of 24mm coil, coil turn apart from 0.1mm, outside same covering heat-shrink tube carries out turn-to-turn insulation.Two electrodes Coil inside water flowing is cold, and outside connects frequency for 13.56MHz, the adjustable radio frequency power sources of 0~2000W.
Fig. 6 is according to an embodiment of the invention, using intensified radio-frequency inductively coupled plasma source generating means Produce the system diagram of the uniform and stable plasma of large-area high-density.In this experiment, using argon gas as source of the gas, the stream of gas Amount is controlled by mass flowmenter, and specific air pressure can be kept it in by coordinating with vacuum system.To hollow copper coil Opened after water flowing is cold and penetrate 13.56M radio frequency sources, plasma density n during electric dischargeeAnd electron temperature TeBy Langmuir double probe system System is constantly measured.Obtained by changing power under a certain air pressure, plasma density is with changed power situation.
Fig. 7 is provided surveys data via experiment, detailed comparisons enhanced inductive coupling plasma generator and biography System type ICP source (air pressure is 10Pa, and power is 200W), obtained plasma density and electron temperature under the same conditions.Can To find out:1. using the present invention under the same conditions, higher than the plasma density that traditional ICP source is produced, the rate of rising is 127.5%, while electron temperature reduces 4.4%;2. E-H modings power is reduced, the increase of snapback area, Ke Yigeng Required high density H discharge modes are easily accessible, while maintaining H mode power scopes wider;3. worked than traditional ICP source Air pressure range is more extensive.

Claims (7)

1. intensified radio-frequency inductively coupled plasma electric discharge device, it is characterised in that it includes upper end cover (1), bottom end cover (2), cylinder quartz glass tube (3), multiple bolt of long stems (4), interior electrode coil (5) and external electrode coil (6);Interior electrode coil It is ICP source coil with external electrode coil, interior electrode coil (5) and external electrode coil (6) one end connect radio frequency power source, in addition one The strict ground connection in end;
Upper end cover (1), bottom end cover (2) and cylinder quartz glass tube (3) collectively form vacuum cavity gas chamber,
Upper end cover (1) is along the circumferential direction evenly equipped with multiple upper end mounting hole (1- beyond the peripheral rim portion of cylinder quartz glass tube (3) 3), the center of upper end cover (1) is provided with interior loop mounting hole (1-1), upper end cover (1) and is provided with air admission hole (1-2), institute Air admission hole (1-2) is stated to connect with vacuum cavity gas chamber;
Bottom end cover (2) is along the circumferential direction evenly equipped with multiple lower end mounting hole (2- beyond the peripheral rim portion of cylinder quartz glass tube (3) 3), be provided with measured hole (2-1) on bottom end cover (2) and vacuumize hole (2-2), measured hole (2-1) and vacuumize hole (2-2) with Vacuum cavity gas chamber connects;Measured hole (2-1) is used to place probe class measurement part;Hole (2-2) is vacuumized by vacuum corrugated pipe Connect pumped vacuum systems;
The outer round surface of cylinder quartz glass tube (3) is provided with external electrode coil (6);Vacuum chamber plenum interior is provided with interior electricity Polar curve circle (5), and installed in interior loop mounting hole (1-1) place;
Upper end mounting hole (1-3) is corresponded by bolt of long stem (4) with lower end mounting hole (2-3) and is fixedly connected;
During work, working gas enters vacuum cavity gas chamber by air admission hole (1-2) spirt of upper end cover (1), in tunable radio frequency power supply Under effect, gas part is breakdown so as to produce plasma between making two electrodes;
It is main based on E patterns under conditions of radio-frequency power is relatively low when electric discharge is opened, discharged with the increase of power by E patterns Be converted to H patterns.
2. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 1, it is characterised in that interior electrode wires Circle (5) and external electrode coil (6) are made of hollow copper tubing.
3. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 2, it is characterised in that hollow copper tubing Outside cover heat-shrink tube for being insulated between pipe.
4. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 2, it is characterised in that interior electrode wires The coil turn for enclosing (5) is more than the coil turn of external electrode coil (6).
5. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 1, it is characterised in that in upper end cover (1) lower surface is provided with the first toroidal cavity (1-4), the top port for fixing cylinder quartz glass tube (3), under The upper surface of end cap (2) is provided with the second toroidal cavity (2-4), the bottom port for fixing cylinder quartz glass tube (3), Sealing part uses epoxy glue seal.
6. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 1, it is characterised in that dispatch from foreign news agency polar curve The hollow copper tubing two ends for enclosing (6) respectively set a connection terminal (6-1), for connecing cold water and being electrically connected with external control system.
7. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 1, it is characterised in that interior electrode wires The hollow copper tubing two ends of circle respectively set a connection terminal, for connecing cold water and being electrically connected with external control system.
CN201510373104.1A 2015-06-30 2015-06-30 Intensified radio-frequency inductively coupled plasma electric discharge device Active CN104981086B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510373104.1A CN104981086B (en) 2015-06-30 2015-06-30 Intensified radio-frequency inductively coupled plasma electric discharge device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510373104.1A CN104981086B (en) 2015-06-30 2015-06-30 Intensified radio-frequency inductively coupled plasma electric discharge device

Publications (2)

Publication Number Publication Date
CN104981086A CN104981086A (en) 2015-10-14
CN104981086B true CN104981086B (en) 2017-08-25

Family

ID=54277028

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510373104.1A Active CN104981086B (en) 2015-06-30 2015-06-30 Intensified radio-frequency inductively coupled plasma electric discharge device

Country Status (1)

Country Link
CN (1) CN104981086B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10727089B2 (en) * 2016-02-12 2020-07-28 Lam Research Corporation Systems and methods for selectively etching film
CN105667843B (en) * 2016-04-15 2017-11-03 哈尔滨工业大学 Earth circular current Effect space plasma ground simulator
CN107087338A (en) * 2017-05-17 2017-08-22 哈尔滨工业大学 A kind of gas discharge type plasma density automatic regulating system and device
CN107920411B (en) * 2017-11-13 2023-09-19 四川大学 Hybrid plasma generator for processing silicon-based materials
CN107999469B (en) * 2017-11-20 2021-04-27 安徽晓星能源科技有限公司 Medium-frequency alternating-current glow cleaning power supply
CN108391365A (en) * 2018-02-24 2018-08-10 佛山市万善环保科技有限公司 A kind of double medium low temperature plasma generating means of electromagnetic induction coupling
CN110337170B (en) * 2019-07-11 2021-06-22 哈尔滨工业大学 High-density plasma jet generating device based on reverse field configuration structure of current driving technology
CN112584597A (en) * 2019-09-30 2021-03-30 中国科学院大连化学物理研究所 Device for activating large-volume getter and enhancing adsorption rate by heating and radio frequency discharge plasma
CN110677972A (en) * 2019-10-17 2020-01-10 中国人民解放军国防科技大学 Plasma generator for SiC optical mirror processing and application method thereof
JP7307695B2 (en) * 2020-03-26 2023-07-12 株式会社ダイヘン Method and plasma source for detecting the state of a plasma source
JP7307697B2 (en) * 2020-03-26 2023-07-12 株式会社ダイヘン Method and plasma source for detecting the state of a plasma source
JP7307696B2 (en) * 2020-03-26 2023-07-12 株式会社ダイヘン Method and plasma source for detecting the state of a plasma source
CN114245558B (en) * 2021-12-29 2023-08-22 中国科学院近代物理研究所 Reinforcing and packaging device and method for angle pinch plasma discharge coil

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100599092B1 (en) * 2004-11-29 2006-07-12 삼성전자주식회사 Electro-magnatic accelerator with driving frequency modulation
CN101043786A (en) * 2006-12-06 2007-09-26 中国科学技术大学 Inductively coupled plasma generating equipment for concave cavity coil antenna
KR101101364B1 (en) * 2010-05-07 2012-01-02 유정호 Device of generating multi plasma for processing
CN103065761A (en) * 2013-01-11 2013-04-24 哈尔滨工业大学 Generation device for uniform radial magnetic fields continuously adjustable in magnetic flux density

Also Published As

Publication number Publication date
CN104981086A (en) 2015-10-14

Similar Documents

Publication Publication Date Title
CN104981086B (en) Intensified radio-frequency inductively coupled plasma electric discharge device
KR101418438B1 (en) Plasma generating apparatus
KR100338057B1 (en) Antenna device for generating inductively coupled plasma
CN102163538B (en) Multi inductively coupled plasma reactor and method thereof
US7079085B2 (en) Antenna structure for inductively coupled plasma generator
US7854213B2 (en) Modulated gap segmented antenna for inductively-coupled plasma processing system
US8917022B2 (en) Plasma generation device and plasma processing device
TWI386996B (en) Confined plasma with adjustable electrode area ratio
CN201465987U (en) Plasma treatment device
TW200405769A (en) Externally excited torroidal plasma source with magnetic control of ion distribution
CN110337170B (en) High-density plasma jet generating device based on reverse field configuration structure of current driving technology
CN106548918A (en) A kind of magnetization capacitively coupled plasma source of radio frequency and direct current combination drive
CN106298425B (en) Improve the plasma chamber of plasma radial uniformity
CN101477944A (en) Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method
KR100786537B1 (en) Multi plasama source for process chamber of semiconductor device
KR101068746B1 (en) Inductive coupling coil and inductive coupling plasma apparatus thereof
CN103545164B (en) A kind of radio frequency plasma reative cell
CN101500369B (en) Inductor coupling coil and inductor coupling plasma generation apparatus
CN104733275B (en) Plasma processing tool
CN203800009U (en) Radio frequency plasma reaction chamber
CN202406373U (en) Plasma processing device
KR100391063B1 (en) Device and Method for Generating Capacitively Coupled Plasma Enhanced Inductively Coupled Plasma
TW201534183A (en) Inductive-coupling-type plasma processing apparatus and self-inductive coil thereof and method thereof for manufacturing semiconductor substrate
KR101200743B1 (en) Multi inductively coupled plasma reactor and method thereof
KR20090073327A (en) Apparatus for high density remote plasma processing

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant