CN101477944A - Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method - Google Patents

Abstract

The invention provides a plasma processing device, an electrode used for the plasma processing device, and a method of producing the electrode. The plasma processing device implements plasma processing on a processed substrate, and comprises: a processing container which intakes the processed substrate and can decompress; a first electrode arranged in the processing container; a supply system which supplies a processing gas for the processing container; and a plasma used for generating the processing gas, wherein an electric field forming system of a high-frequency electric field is formed in the processing container, the first electrode is provided with a plurality of convex parts which are discretely formed on a main surface of the first electrode and protrude toward the space where the plasma is generated, dielectric bodies are arranged on the main surface of the first electrode among the convex parts, and on the main surface of the first electrode, the density of the convex parts is configured to gradually increase toward the edge part of the electrode from the center part of the electrode.

Description

The electrode of plasma processing apparatus and use thereof and electrode manufacturing method

This case be that February 3, application number in 2004 are 200480003417.8 the applying date, denomination of invention divides an application for the patent application of " battery lead plate that plasma processing apparatus and plasma processing apparatus are used and electrode plate manufacturing method ".

Technical field

The present invention relates to processed substrate is implemented the technology of plasma treatment, particularly relate to the plasma treatment technology that high frequency waves is supplied to electrode and generate the high-frequency discharge mode of plasma.The present invention be more particularly directed to make the plasma treatment technology of being utilized in the semiconductor processes of semiconductor equipment.Here, so-called semiconductor processes is meant, for the figure with regulation on the processed substrates such as glass substrate of semiconductor wafer or LCD (LCD) or FPD (flat-panel monitor) usefulness forms semiconductor layer, insulating barrier, conductive layer etc., on this processed substrate, make whereby and comprise semiconductor equipment, be connected in the various processing that the distribution, electrode etc. of semiconductor equipment are implemented at interior works.

Background technology

During etching in the manufacture process of semiconductor equipment or FPD, deposition, oxidation, sputter etc. are handled, in order to utilize plasma in processing gas, carrying out good reaction under the lower temperature more.Usually, for plasma processing apparatus,, can be divided into substantially and utilize corona (glow) discharge or high-frequency discharge and utilize microwave as the mode that generates plasma.

In the plasma processing apparatus of high-frequency discharge mode, in container handling or reative cell, dispose upper electrode and lower electrode abreast.The processed substrate of mounting (semiconductor wafer, glass substrate etc.) puts on upper electrode or lower electrode via integrator with the high frequency voltage that plasma generates usefulness on lower electrode.By electronics is quickened, because of plasma takes place for electronics and the impact ionization of handling gas.

Recently, the high-density plasma under the article on plasma body processing requirements low pressure along with the miniaturization of the design rule in the manufacture process.Therefore, in the plasma processing apparatus of above-mentioned this high-frequency discharge mode, bring into use frequency than existing frequency (in general 27MHz the is following) high-frequency range (more than the 50MHz) that height is a lot.But, if improve the frequency of high-frequency discharge, then put on the High frequency power of electrode the inside by feeder rod used therein from high frequency electric source, pass to electrode surface because of skin effect and flow to central part from the edge part of electrode interarea (face relative) with plasma.If high-frequency current flows to central part from edge part on the same electrode interarea, then the electric field strength at the electric field ratio edge part place at the central part place of electrode interarea uprises.Thereby the density of the plasma that is generated also is that electrode centers portion one side uprises than electrode edge portion's one side.In the high electrode centers portion of plasma density, the resistivity of plasma reduces, at the electrode of opposite place also be current concentration in electrode centers portion, the inhomogeneities of plasma density further strengthens.

In order to eliminate this problem, known have an interarea central part (for example the Japan Patent spy opens communique 2000-No. 323456) that is made of high-frequency electrode the high resistance member.In the method, constitute the central portion of the interarea (plasma contact-making surface) of the electrode that is connected in high frequency electric source one side by the high resistance member.By consuming a lot of High frequency power as Joule heat, make the electric field strength of electrode interarea relatively reduce than electrode peripheral part in electrode centers portion by this high resistance member.Thereby, revise the inhomogeneities of above-mentioned the sort of plasma density.

But, in the plasma processing apparatus of above-mentioned the sort of high-frequency discharge mode, constitute the interarea central part of high-frequency electrode by the high resistance member, exist the possibility that the consumption (energy loss) of the High frequency power that causes because of Joule heat increases.

Summary of the invention

The present invention forms in view of this prior art problems, and its purpose is to provide a kind of plasma processing apparatus of high-frequency discharge mode of the homogenizing that can realize plasma density effectively and the battery lead plate that plasma processing apparatus is used.

Another object of the present invention is to provide a kind of can be produced on the whole electrode plate manufacturing method that the structure of electrostatic chuck is set on the battery lead plate that plasma processing apparatus according to the present invention uses expeditiously.

To achieve these goals, first plasma processing apparatus of the present invention, be that first electrode is set in the container handling that can reduce pressure, in above-mentioned container handling, form high-frequency electric field and flow into the plasma of handling gas and generating above-mentioned processing gas, below above-mentioned plasma, processed substrate is implemented the plasma processing apparatus of the plasma treatment of expectation, wherein, on the interarea of above-mentioned first electrode, be provided with discretely towards the outstanding a plurality of protuberances in the space that generates above-mentioned plasma.In this device constitutes, put on first electrode if plasma can be generated the high frequency of usefulness, then high frequency is put on other electrodes, it also is possible for example putting on second relative with first electrode in the parallel plate-type electrode.In the occasion that high frequency is put on first electrode, can from the inside supply high frequency of the relative side of interarea of first electrode.

As from the inboard high frequency is supplied to the occasion of first electrode, high-frequency current is because of skin effect, make high-frequency current on the interarea of first electrode from electrode edge portion when electrode centers portion flows, flow through the superficial layer of protuberance.Because protuberance is side-prominent to plasma space one, so, with than part impedance that just the interarea bottom surface sections is low and plasma electrical bond beyond the protuberance.Therefore, by the high-frequency current of the superficial layer of the interarea that flows through electrode and the High frequency power of moving mainly emit to plasma from the end face of protuberance.So, be arranged on a plurality of protuberances on the interarea of first electrode discretely respectively as being used for High frequency power is supplied to the small electrode of plasma and brings into play function.Attribute by suitable this protuberance of selection (shape, size, at interval, density etc.), and the High frequency power supply characteristics of the first electrode pair plasma can be controlled to desired characteristics.

For example, in order to guarantee the High frequency power functions of physical supply at above-mentioned this protuberance place, preferably on the interarea of first electrode, the height and the electrode width radially of protuberance is taken as by more than three times of the expressed skin depth δ of following formula (1):

δ＝(2/ωσμ) ^1/2 ……(1)

In the formula, and ω=2 π f (f: frequency), σ: conductance, μ: permeability.

In addition, in order to improve the electric field strength that electrode radially locates or the uniformity of plasma density, preferably, and on the interarea of first electrode, the formation that the area density of protuberance is increased to electrode edge portion gradually from electrode centers portion.For example, in the occasion that protuberance is formed certain size, the distribution character that the individual number density of protuberance is increased to electrode edge portion gradually from electrode centers portion.

In addition, as preferred a kind of mode, protuberance can be formed cylindric.Perhaps, protuberance is formed ring-type respectively, and overall arrangement to become the formation of concentric circles also be possible.

In addition, for the High frequency power that improves above-mentioned this protuberance generation is emitted function, preferably, on the interarea of first electrode, on the part beyond the protuberance, dielectric is set at least.

Second plasma processing apparatus of the present invention, be that first electrode is set in the container handling that can reduce pressure, in above-mentioned container handling, form high-frequency electric field and flow into the plasma of handling gas and generating above-mentioned processing gas, below above-mentioned plasma, processed substrate is implemented the plasma processing apparatus of the plasma treatment of expectation, wherein, on the interarea of above-mentioned first electrode, be provided with a plurality of recessed recesses discretely relatively with the space that generates above-mentioned plasma.In this device constitutes also be, put on first electrode if plasma can be generated the high frequency of usefulness, then high frequency is put on other electrodes for example in parallel plate-type second electrode relative with first electrode also be possible.In the occasion that high frequency is put on first electrode, can from the inside supply high frequency of the relative side of interarea of first electrode.

Because recess on the interarea of first electrode and plasma space one side are relatively recessed, so, come and the plasma electrical bond with the impedance higher than the part (top part of electrode interarea) beyond the recess.Therefore, the High frequency power of moving because of the high-frequency current of the superficial layer of the interarea that flows through first electrode mainly the part (top part of electrode interarea) beyond the recess emit to plasma.So, on the interarea of first electrode discretely a plurality of recesses of configuration bring into play function as the electrode mask of the supply of the High frequency power that suppresses the article on plasma body respectively.Attribute by suitable this recess of selection (shape, size, at interval, density etc.), and the effect that the first electrode pair plasma generates can be controlled to desired characteristics.

For example, supply with mask functions, preferably on the interarea of first electrode, make the height of recess and electrode width radially be taken as more than three times of above-mentioned skin depth δ in order to guarantee the High frequency power that above-mentioned this recess produces.

In addition, in order to improve the electric field strength that electrode radially locates or the uniformity of plasma density, preferably on the interarea of first electrode, the formation that the area density of recess is strengthened to electrode edge portion gradually from electrode centers portion.For example, in the occasion that recess is formed certain size, can be taken as the distribution character that the individual number density of recess reduces to electrode edge portion gradually from electrode centers portion.

In addition, as preferred a kind of mode, it is cylindric that recess is formed.Perhaps, in order to improve the High frequency power supply mask functions that above-mentioned this recess produces, the formation of dielectric is set in recess at least on the interarea of first electrode preferably.

C grade gas ions processing unit of the present invention, be that first electrode is set in the container handling that can reduce pressure, in above-mentioned container handling, form high-frequency electric field and flow into the plasma of handling gas and generating above-mentioned processing gas, under above-mentioned plasma, processed substrate is implemented the plasma processing apparatus of the plasma treatment of expectation, wherein, on the interarea of above-mentioned first electrode dielectric is set, the thickness of above-mentioned dielectric of central part one side that makes above-mentioned first electrode is greater than the thickness of the above-mentioned dielectric of electrode edge portion one side.In this device constitutes also be, put on first electrode if plasma can be generated the high frequency of usefulness, then high frequency is put on other electrodes for example in parallel plate-type second electrode relative with first electrode also be possible.In the occasion that high frequency is put on first electrode, can from the inside supply high frequency of the relative side of interarea of first electrode.

In said apparatus constitutes, the impedance of electrode edge portion one side is low because the impedance of article on plasma body space one side electrode of opposite central part is big, so the high-frequency electric field of electrode edge portion one side strengthens, and on the other hand, the high-frequency electric field of electrode centers portion one side weakens, thereby the uniformity of electric field strength or plasma density improves.

In said apparatus constituted, the preferred profile of dielectric was electrode centers portion one lateral electrodes edge part, one side from first electrode, and the thickness of dielectric (is more preferably archedly) formation that reduces gradually.In addition, preferably in the place, inboard of first diameter that comprises electrode centers portion, the formation that the thickness of dielectric is almost constant.In this occasion, outside at first diameter, the thickness of dielectric also can reduce to electrode edge portion lopsidedness ground, perhaps also can be almost constant at the place, inboard greater than second diameter of first diameter, reduces to electrode edge portion lopsidedness ground in the outside of second diameter.Though the area size of dielectric can at random be set according to the size of processed substrate, typically also can set almost same size for.That is to say that the position that the thickness of dielectric becomes minimum edge part can be set near the position relative with the edge part of processed substrate.In addition, because between the thickness of the dielectric at the dielectric constant of the dielectric that provides good inner evenness and electrode centers portion place, exist certain dependency relation, so as long as set the thickness of the dielectric at electrode centers portion place corresponding to the dielectric constant of the dielectric that uses.

In addition, as preferred a kind of mode, can the part that cover dielectric, near for example edge part the shield member of conductivity be set on the interarea of first electrode.If use this formation, then in the zone that the conductively-closed member is covered, it is possible that the electric field strength that weakens dielectric reduces effect, the shape of the peristome by changing shield member and/or size and can adjust electric-field intensity distribution.This shield member preferably can load and unload, be to install replaceablely.

In addition, as preferred a kind of mode, on the interarea of first electrode, make the formation of stretching out the overhang of expectation from the electrode part in the position outside of leaving desired distance at the neighboring of dielectric radial outside to the plasma span.In this electrode structure, by radial outside extension is set, and near the location the edge part of processed substrate is increasing control or adjustment electric-field intensity distribution characteristic on the direction of electric field strength at dielectric.Overhang that the control of electric-field intensity distribution that this extension carries out can be by extension or the position of stretching out stage portion are added and subtracted or are variable.

In addition, as other preferred a kind of mode, on the interarea of first electrode, the formation that makes dielectric stretch out the overhang of expectation to the plasma span also is possible.In this electrode structure, on each position of the plasma span relative with dielectric, the overhang of dielectric is increasing control or adjustment electric-field intensity distribution characteristic on the direction of electric field strength.

And then, if adopt other preferred a kind of mode, on the interarea of first electrode, be provided with the cavity in the inside of dielectric, in this cavity, insert mobile dielectricity material (preferably organic solvent).In this constitutes, enter the dielectricity amount of substance in the cavity or occupy spatial form by suitably selecting or setting, it is possible at random adjusting the overall dielectric constant of dielectric.It also is possible that this cavity forms in the dielectric of solid, can also be made of the surface at least of the interarea of first electrode solid, constitutes inner wall or recess by electrode fertile material (electric conductor).

In above-mentioned first, second or C grade gas ions processing unit, even in the occasion that high frequency is not put on first electrode that above-mentioned and so on protuberance, recess or dielectric are set, even for example, also can the article on plasma body span produce and above-mentioned same effect with the occasion of first electrode grounding in earthing potential.

In plasma processing apparatus of the present invention, can be used for by Coulomb force absorption keep the electrostatic chuck of processed substrate be located at high frequency electric source one side first electrode interarea above, perhaps also can be arranged on comparative electrode, promptly on the interarea of second electrode.Occasion on the interarea that electrostatic chuck is arranged on first electrode is connected in earthing potential via container handling with second electrode, can make the high-frequency current in the plasma flow to ground by container handling.

First battery lead plate that plasma processing apparatus of the present invention uses is in the plasma processing apparatus of high-frequency discharge mode, in order to generate plasma in container handling set battery lead plate, on the interarea relative, be provided with a plurality of protuberances discretely with plasma.The battery lead plate of this formation can obtain with above-mentioned first plasma processing apparatus in the same effect of first or second electrode.

The electrode plate manufacturing method of the present invention that is used for making this first battery lead plate comprises making to have the operation that is covered in the interarea of electrode body corresponding to the mask of the opening of raised part, above aforementioned mask on the interarea of above-mentioned electrode body the metal of spraying plating conductivity or semiconductor and in above-mentioned opening, form the operation of raised part and the operation of removing aforementioned mask from the interarea of above-mentioned electrode body.

Second battery lead plate that plasma processing apparatus of the present invention uses is in the plasma processing apparatus of high-frequency discharge mode, the battery lead plate that is provided with in container handling in order to generate plasma is provided with a plurality of recesses discretely on the interarea relative with plasma.The battery lead plate of this formation can obtain with above-mentioned second plasma processing apparatus in the same effect of first or second electrode.

The electrode plate manufacturing method of the present invention that is used for making this second battery lead plate comprises: make to have the operation that is covered in the interarea of electrode base board corresponding to the mask of the opening of above-mentioned recess; above aforementioned mask to the interarea of above-mentioned electrode base board spray solid particle or liquid and physically remove above-mentioned electrode base board in above-mentioned opening part and form the operation of above-mentioned recess and the operation of removing aforementioned mask from the interarea of above-mentioned electrode base board.

In electrode plate manufacturing method of the present invention, preferably, have spraying plating dielectric on the interarea of having removed the electrode base board behind the mask and form the operation of the first dielectric film.Thereby, can on the part beyond first battery lead plate is in protuberance,, be used for improving the dielectric of impedance ratio with interior setting at recess at second battery lead plate place.

In addition, in order on first battery lead plate or second battery lead plate, electrostatic chuck to be set integrally, preferably, the whole interarea of coated electrode substrate and form the first dielectric film, spraying plating electrode material on the first dielectric film and form the electrode film that electrostatic chuck is used, spraying plating dielectric on electrode film and form the second dielectric film.If in this way, then can on the interarea of first or second battery lead plate, form simultaneously and be used for improving the dielectric of impedance ratio and the bottom dielectric film that electrostatic chuck is used.

The third electrode plate that plasma processing apparatus of the present invention uses is in the plasma processing apparatus of high-frequency discharge mode, in order to generate plasma in container handling set battery lead plate, on the interarea relative with plasma dielectric is set, the thickness of above-mentioned dielectric at central part place that makes above-mentioned first electrode is greater than the formation of the thickness of the above-mentioned dielectric at electrode edge portion place.The battery lead plate of this formation can obtain with above-mentioned C grade gas ions processing unit in the same effect of first or second electrode.

Description of drawings

Fig. 1 is the longitudinal section of expression according to the formation of the plasma-etching apparatus of an embodiment of the invention.

Fig. 2 is the plane graph of the base construction of expression first embodiment of the invention.

Fig. 3 is that longitudinal section is amplified in the part of the base construction of expression first embodiment of the invention.

Fig. 4 is the figure of one of the number density distribution characteristic example of the protuberance in the base construction of expression first embodiment of the invention.

Fig. 5 is the ideograph of the structure of the high-frequency discharge in the plasma-etching apparatus shown in the presentation graphs 1.

Fig. 6 is the plane graph of the directivity of the interarea high-frequency current that flows through high-frequency electrode in the plasma-etching apparatus shown in the presentation graphs 1.

Fig. 7 is the concise and to the point longitudinal section with the radiation of High frequency power (electric field) of flowing of the high-frequency current in the base construction of expression first execution mode.

Fig. 8 is the performance plot that the attenuation characteristic on the depth direction of electromagnetic wave (high-frequency current) of conductor is flow through in expression.

Fig. 9 is the figure of the electric-field intensity distribution characteristic on the electrode radius direction when representing in the first embodiment that ratio with the protuberance number density of electrode centers portion and edge part is parameter.

Figure 10 is the partial longitudinal section figure that the formation of electrostatic chuck on pedestal integrally be set of expression according to first execution mode.

Figure 11 is the protuberance in the static electrification chuck base holder structure of expression Figure 10 and the figure of the impedance ratio characteristic of bottom surface sections.

Figure 12 A～Figure 12 F is the figure of manufacture method that represents the static electrification chuck base holder structure of Figure 10 by process sequence.

Figure 13 is the figure of expression according to a variation of the base construction of first execution mode.

Figure 14 is the longitudinal section that electrode protuberance structure applied to the configuration example of upper electrode of expression according to first execution mode.

Figure 15 is a plane graph of representing electrode structure second embodiment of the invention.

Figure 16 is that longitudinal section is amplified in the part of the electrode structure of expression Figure 15.

Figure 17 is the figure of one of the number density distribution characteristic example of the recess in the electrode structure of expression Figure 15.

Figure 18 A～Figure 18 F represents figure according to the manufacture method of the structure that electrostatic chuck integrally is set of second execution mode by process sequence on electrode structure.

Figure 19 is the plane graph of expression according to the lower electrode structure of the 3rd execution mode.

Figure 20 is the plane graph of expression according to the upper electrode of the 3rd execution mode.

Figure 21 is the figure of one of the parallel plate electrode structure in expression the 3rd execution mode example.

Figure 22 is to be the figure of the interelectrode electric-field intensity distribution characteristic radially of parameter with the thickness of top electrode centers portion in the parallel plate electrode structure of expression Figure 21.

Figure 23 A～Figure 23 D is the figure about the more specifically embodiment of the thickness profile of the dielectric film of upper electrode of expression in the 3rd execution mode.

Figure 24 A and Figure 24 B are the figure that represents respectively by Figure 23 A～embodiment of Figure 23 D and the resulting interelectrode electric-field intensity distribution characteristic radially of desirable profile.

Figure 25 A～Figure 25 D is the figure about more specifically another embodiment of the thickness profile of the dielectric film of upper electrode of expression in the 3rd execution mode.

Figure 26 A and Figure 26 B are the figure of expression by the resulting interelectrode electric-field intensity distribution characteristic radially of the embodiment of Figure 25 A～Figure 25 D.

Figure 27 A～Figure 27 C is the figure about the more specifically another kind of embodiment of the thickness of the dielectric film of upper electrode and membranous profile of expression in the 3rd execution mode.

Figure 28 A and Figure 28 B are the figure of expression by the resulting interelectrode electric-field intensity distribution characteristic radially of the embodiment of Figure 27 A～Figure 27 C.

Figure 29 is expression according to the figure of the dependency relation of the thickness of the dielectric constant of the dielectric film that provides enough inner evenness in practicality that data point made of Figure 28 A and Figure 28 B and electrode centers portion.

Figure 30 A and Figure 30 B are at the etched etch rate distribution characteristic of organic membrane, and the contrast expression applies to the embodiment A of upper electrode and the figure of comparative example B with the 3rd execution mode.

Figure 31 A and Figure 31 B are the embodiment of the contrast expression structure that the 3rd execution mode applied to lower electrode and the figure of comparative example.

Figure 32 A and Figure 32 B are at the etched etch rate distribution characteristic of organic membrane, the figure of the embodiment of contrast table diagrammatic sketch 31A and the comparative example of Figure 31 B.

Figure 33 A and Figure 33 B are the partial sections of the embodiment of upper electrode structure according to another implementation of the invention.

Figure 34 is the figure of expression by the resulting interelectrode electric-field intensity distribution characteristic radially of the embodiment of Figure 33 A and Figure 33 B.

Figure 35 A～Figure 35 C is the partial section that represents respectively according to embodiment, comparative example and the reference example of the upper electrode structure of another execution mode of the present invention.

Figure 36 is the figure that represents respectively by the resulting interelectrode electric-field intensity distribution characteristic radially of embodiment, comparative example and the reference example of Figure 35 A～Figure 35 C.

Figure 37 A～Figure 37 C represents two other embodiment of upper electrode structure and the partial section of comparative example respectively.

Figure 38 is the figure that represents respectively by embodiment and the etched etching speed of the resulting oxide-film of comparative example (normalized value) distribution character of Figure 37 A～Figure 37 C.

Figure 39 A～Figure 39 C is the partial section that represents respectively according to embodiment, comparative example and the reference example of the upper electrode structure of another execution mode of the present invention.

Figure 40 is the figure that represents respectively by the resulting interelectrode electric-field intensity distribution characteristic radially of embodiment, comparative example and the reference example of Figure 39 A～Figure 39 C.

Figure 41 is the partial section of expression according to the upper electrode structure of the variation of the execution mode of Figure 35 A～Figure 38.

Figure 42 A～Figure 42 D is the partial section of expression according to the upper electrode structure of another execution mode of the present invention.

Figure 43 is the partial section of the specific embodiment in the execution mode of presentation graphs 42A～Figure 42 D.

Figure 44 is the figure of expression by the resulting interelectrode electric-field intensity distribution characteristic radially of the embodiment of Figure 43.

Figure 45 A～Figure 45 D is the partial section of expression according to the upper electrode structure of the variation of the execution mode of Figure 42 A～Figure 42 D.

Embodiment

Describe with regard to embodiments of the present invention with reference to accompanying drawing following.Wherein, in the following description, with regard to inscape, mark same label, and only carry out repeat specification in the case of necessary with roughly same function and formation.

Fig. 1 is the longitudinal section of expression according to the formation of the plasma-etching apparatus of an embodiment of the invention.This plasma processing unit constitutes as RIE type plasma-etching apparatus.Plasma processing apparatus has for example by metal cylindrical cavities (container handling) 10 such as aluminium or stainless steels.Chamber 10 is by safety ground.

In chamber 10, dispose as processed the substrate for example discoideus lower electrode or the pedestal 12 of mounting semiconductor wafer W.This pedestal 12 is for example made of aluminum, is supported on via the tubular maintaining part 14 of insulating properties on the tubular support portion 16 of extending vertically upward from the bottom surface of chamber 10.On tubular maintaining part 14, disposing the top focusing ring of for example making 18 that surrounds pedestal 12 with ring-type by quartz.

Between the sidewall of chamber 10 and tubular support portion 16, be formed with exhaust line 20.At the inlet of this exhaust line 20 or the dividing plate 22 of ring-type is installed, and dispose exhaust outlet 24 midway in the bottom.Exhaust apparatus 28 is connected in this exhaust outlet 24 via blast pipe 26.Exhaust apparatus 28 has vacuum pump, and the specified vacuum degree can reduce pressure the processing space in the chamber 10 to.On the sidewall of chamber 10, be equipped with and open and close the family of power and influence 30 that moving into of semiconductor wafer taken out of mouth.

On pedestal 12, be electrically connected the high frequency electric source 32 that plasma generates usefulness via integrator 34 and feeder rod used therein 36.This high frequency electric source 32 with the regulation high frequency for example the High frequency power of 60MHz put on lower electrode pedestal 12 just.Wherein, in the ceiling portion of chamber 10, as the upper electrode of earthing potential and dispose shower nozzle 38 described later.Therefore, the high frequency voltage from high frequency electric source 32 puts on capacitive way between pedestal 12 and the shower nozzle 38.

On pedestal 12, dispose the electrostatic chuck 40 that is used for keeping semiconductor wafer W with Electrostatic Absorption power.This electrostatic chuck 40 will be sandwiched by the electrode 40a that conducting film is formed between a pair of dielectric film 40b, the 40c.DC power supply 42 is electrically connected in electrode 40a via switch 43.By can semiconductor wafer W absorption being remained on the pedestal by the Coulomb force from the direct voltage of DC power supply 42.

In the inside of pedestal 12, for example dispose the coolant room 44 that prolongs at circumferencial direction.In this coolant room 44, circulate via pipe arrangement 48,50 by frigorific unit 46 and to supply with the cooling agent of set point of temperature, for example cooling water.Control the treatment temperature of the semiconductor wafer W on the electrostatic chuck 40 by the temperature of cooling agent.And, from the heat-conducting gas of heat-conducting gas supply unit 52 He gas for example, be fed into via gas supply line 54 between the bottom surface of top and semiconductor wafer W of electrostatic chuck 40.

For the shower nozzle 38 of ceiling portion, it comprises following battery lead plate 56 with a plurality of gas vent hole 56a and the electrode support 58 that releasably supports this battery lead plate 56.Be provided with surge chamber 60 in the inside of electrode support 58, be connected in the gas introduction port 60a of this surge chamber 60 from the gas supplying tubing 64 of handling gas supply part 62.

Around chamber 10, dispose the magnet 66 that prolongs with ring-type or concentric shape.In chamber 10, in the space between shower nozzle 38 and pedestal 12, form the RF electric field of vertical direction by high frequency electric source 32.Can generate highdensity plasma at the near surface of pedestal 12 by the discharge of high frequency.

In order to control each for example switch 43 used of exhaust apparatus 28, high frequency electric source 32, electrostatic chuck, frigorific unit 46, the heat-conducting gas supply unit 52 and handle the action of gas supply part 62 etc. in this plasma Etaching device, and control part 68 is set.Control part 68 also is connected with master computer (scheming not shown) etc.

In this plasma Etaching device, carrying out etched occasion, carry out following this operation.That is to say, at first make 30 one-tenth of the families of power and influence open state and will move into chamber 10, and mounting is on electrostatic chuck 40 as the semiconductor wafer W of processing object.Then, etching gas (in general being mist) is imported in the chamber 10, make the pressure in the chamber 10 become set point by exhaust apparatus 28 by handling the flow and the flow-rate ratio of gas supply part 62 with regulation.And, from high frequency electric source 32 with the regulation power to pedestal 12 supply high frequency electric power.In addition, by DC power supply 42 direct voltage is put on the electrode 40a of electrostatic chuck 40, thereby semiconductor wafer W is fixed on the electrostatic chuck 40.The etching gas that is sprayed from shower nozzle 38 between two electrodes 12,38 because of the discharge of high frequency by plasmaization, by by free radical that this plasma generated or ion and with the interarea etching of semiconductor wafer W.

In this plasma Etaching device, pedestal (lower electrode) 12 is applied apparently higher than the high frequency of the frequency range (more than the 50MHz) of existing (in general below the 27MHz).Therefore, make the plasma densification, even under the condition of low pressure more, also can form high-density plasma with the disassociation state of the best.

Fig. 2, Fig. 3 and Fig. 4 are the plane graphs of the base construction (pedestal) 12 of representing first embodiment of the invention respectively, represent the amplification longitudinal section of this structure, represent the figure of one of the number density distribution characteristic example of the protuberance in this structure.On the interarea of pedestal 12 (in the present embodiment above the pedestal 12, just the face of the plasma span one side), dispose the cylindrical boss 70 of a plurality of certain sizes of forming by electric conductor or semiconductor discretely.These protuberances 70 are configured to provide to plasma the small electrode of High frequency power or high-frequency electric field respectively.Preferably like that distribute and be disposed on the interarea of pedestal 12 as shown in Figure 4 to strengthen number density distribution or area density gradually to electrode edge portion from electrode centers portion.

Fig. 5 is in the plasma-etching apparatus shown in the presentation graphs 1, the ideograph of the structure of high-frequency discharge.As shown in Figure 5, if supply to pedestal 12,, and near semiconductor wafer W, generate the plasma P Z of etching gas then because of the high-frequency discharge between pedestal (lower electrode) 12 and the upper electrode 38 from the High frequency power of high frequency electric source 32.The plasma P Z that is generated to around, particularly upward with the diffuse outside of radial direction.Electronic current among the plasma P Z or ionic current flow earthward by upper electrode 38 or chamber sidewall etc.

Fig. 6 is in the plasma-etching apparatus shown in the presentation graphs 1, flows through the plane graph of directivity of high-frequency current of the interarea of high-frequency electrode.At pedestal 12 places, put on inside the pedestal via feeder rod used therein 36 or back side High frequency power from high frequency electric source 32, because of skin effect propagates into the electrode surface layer.As shown in Figure 6, high-frequency current i flows with the reverse emission shape to central part from edge part on the interarea of pedestal 12.

Fig. 7 is the fragmentary cross sectional view with the radiation of High frequency power (electric field) of flowing of the high-frequency current in the base construction (pedestal 12) of expression first execution mode.As shown in Figure 7, in the present embodiment, high-frequency current i crosses the superficial layer of protuberance 70 at the interarea upper reaches of pedestal 12.Since protuberance 70 to upper electrode 38 1 sides, be that plasma P Z is side-prominent, so, with impedance and the plasma P Z electrical bond of the bottom surface sections 12a that is lower than interarea.Therefore, the High frequency power of moving owing to the high-frequency current i of the superficial layer of the interarea that flows through pedestal 12 is mainly emitted to plasma P Z from the top of protuberance 70.

Wherein, as shown in Figure 3, preferably (on the bottom surface sections 12a) is provided with the formation of dielectric 72 around protuberance 70.Therefore, on the interarea of pedestal 12, can strengthen the impedance ratio Z of protuberance 70 and bottom surface sections 12a _12a/ Z ₇₀That is to say, can improve the ratio or the electric power supply rate that give the High frequency power of plasma P Z by protuberance 70.

So, in the present embodiment, a plurality of protuberances 70 that are provided with discretely on the interarea of pedestal 12 are respectively as being used for High frequency power is supplied to the small electrode of plasma P Z and brings into play function.Attribute by selecting this protuberance 70 (shape, size, at interval, density etc.) can be set the High frequency power supply characteristics as the pedestal 12 of the aggregate of small electrode for desired characteristics.

For example, as above (Fig. 4) is described, the individual number density of protuberance 70 can be taken as the distribution character that strengthens gradually to electrode edge portion from electrode centers portion.Therefore, as shown in Figure 9, can improve by pedestal 12 giving the High frequency power of plasma P Z or the uniformity of high-frequency electric field (the particularly uniformity of electrode radius direction).

Fig. 9 is the figure of the current strength distribution character on the electrode radius direction when representing in the first embodiment that ratio with the protuberance number density of electrode centers portion and edge part is parameter.In the example of Fig. 9, the radius of establishing pedestal 12 is 150mm, represents the electric-field intensity distribution of the radial direction of pedestal 12.Here, the ratio Ne/Nc with the individual number density Ne of the protuberance 70 of the individual number density Nc of the protuberance 70 of electrode centers portion and electrode edge portion is altered to 1 (doubly), 2 (doubly), 4 (doubly), 6 (doubly), 8 (doubly).Ratio Ne/Nc is big more, and then the uniformity of electric field strength is improved more, and then the uniformity of plasma density improves more.

In other attributes of protuberance 70, size particularly importantly.If the height of protuberance 70 is too small, if more precisely less than skin depth (skin depth) δ, then on the interarea of pedestal 12, the part of high-frequency current i or major part are straight below protuberance 70.Therefore, because this reason weakens to the high-frequency electric field that plasma P Z is supplied with from protuberance 70.Here, skin depth δ is that the amplitude that flows through the high-frequency current of surface of conductors layer is sentenced the such factor of 1/e decay at degree of depth δ, is provided by following formula (1):

δ＝(2/ωσμ) ^1/2 ………(1)

In the formula, and ω=2 π f (f: frequency), σ: conductance, μ: permeability.

Fig. 8 is the performance plot that the attenuation characteristic on the depth direction of electromagnetic wave (high-frequency current) of conductor is flow through in expression.As shown in Figure 8, because skin effect, the amplitude that flows through the electromagnetic wave (high-frequency current) of surface of conductors layer is decayed on the depth direction of conductor, decays to about 5% at three times the degree of depth place of skin depth δ.Thereby, become the height more than three times of skin depth δ by height setting with protuberance 70, make the major part (about more than 95%) of high-frequency current i flow into protuberance 70, can emit High frequency power from protuberance 70 to plasma P Z expeditiously.For example, the material of pedestal 12 and protuberance 70 is taken as aluminium, the frequency of establishing high frequency electric source 32 is the occasion of 100MHz, and skin depth δ is 8 μ m.Thereby preferably the height setting with protuberance 70 becomes more than the 24 μ m.

The width dimensions of protuberance 70, the particularly width dimensions of electrode radius direction also are important.In order to make high-frequency current i flow into the end face of protuberance 70 fully, the width dimensions that needs only the electrode radius direction just can greatly.This width dimensions can be set more than three times of skin depth δ for, preferably sets under frequency 100MHz in the scope of 30 μ m～500 μ m.

Distance between the protuberance 70 also can be chosen to make the impedance ratio Z of protuberance 70 and bottom surface sections 12a at interval _12a/ Z ₇₀The value of optimizing.This interval is for example preferably set under 100MHz in the scope of 100 μ m～1mm.

Figure 10 is the partial longitudinal section figure that the formation of electrostatic chuck on pedestal integrally be set of expression according to first execution mode.As shown in Figure 10, on the interarea of pedestal 12, more precisely at the protuberance 70 and the bottom dielectric film 40b of formation electrostatic chuck 40 above the dielectric 72.Formation electrode film 40a on the dielectric film 40b of bottom, and then, formation top dielectric film 40c on electrode film 40a.

Figure 11 is the protuberance in the static electrification chuck base holder structure of expression Figure 10 and the figure of the impedance ratio characteristic of bottom surface sections.The parameter of the transverse axis of Figure 11 is the gross area S of the protuberance 70 (the teat end face of accurately saying so) on the interarea of pedestal 12 ₇₀Gross area S with bottom surface sections 12a _12aRatio S _12a/ S ₇₀The longitudinal axis of Figure 11 shows from the end face of protuberance 70 to the distance (D1) of electrode film 40a the ratio D2/D1 with distance (D2) from base bottom surface 12a to electrode film 40a.The functional value of Figure 11 shows the impedance Z of the protuberance on the interarea of pedestal 12 ₇₀Impedance Z with bottom surface sections 12a _12aRatio Z _12a/ Z ₇₀

In the laminated structure shown in Figure 10, the thickness D1 of the bottom dielectric film 40b of electrostatic chuck 40 is important.As long as other conditions permits preferably make this thickness D1 relatively littler.As shown in Figure 11, D2/D1 is big more, then can strengthen Z _12a/ Z ₇₀According to Figure 11, this ratio D2/D1 above value of 2 (doubly) of preferably hanking.

In addition, for by reducing ratio S _12a/ S ₇₀Method, promptly, also can strengthen impedance ratio Z by improving the occupied area rate of protuberance 70 _12a/ Z ₇₀(functional value of Figure 11).As mentioned above, impedance ratio Z _12a/ Z ₇₀Big more, then the High frequency power supply rate from protuberance 70 article on plasma body PZ can be high more.According to Figure 11, ratio S _12a/ S ₇₀Preferably be chosen to below 4 (doubly).

Figure 12 A～Figure 12 F is the figure of manufacture method that represents the static electrification chuck base holder structure of Figure 10 by process sequence.

At first, as shown in Figure 12 A, on the interarea of Base body for example made of aluminum (electrode base board) 12, cover the mask that for example is formed from a resin 74 that has corresponding to the peristome 74a of protuberance 70.In this mask 74, the flat shape of peristome 74a and plane size block are decided the flat shape and the planar dimension of protuberance 70.The height dimension of the degree of depth of peristome 74a regulation protuberance 70 (D2-D1: for example 150 μ m).

Then, as shown in Figure 12B, from the material of going up spraying plating protuberance 70 on the whole interarea of Base body 12 of mask 74, for example aluminium spraying (Al).Thereby, in the peristome 74a of mask 74, aluminium is filled to the height above the mask.

Then, from the interarea of Base body 12, for example use the soup dissolving to remove mask 74.Thereby, as shown in Figure 12 C, on the interarea of Base body 12, stay a plurality of protuberances 70 of given size discretely with the distribution pattern of regulation.

Then, as shown in Figure 12 D, spraying plating dielectric material, for example spraying plating aluminium oxide (Al on the whole interarea of Base body 12 ₂O ₃).Thereby, reach the thickness of specified altitude (D1: for example 50 μ m) with end face and form dielectric film (72,40b) from protuberance 70.

Then, as shown in Figure 12 E, cross over the whole interarea of Base body 12, the material of the electrode film 40a of spraying plating electrostatic chuck 40 on dielectric film 40b, for example spraying plating tungsten (W).Thereby, form the electrode film 40a of specific thickness (D3: for example 50 μ m).

Then, as shown in Figure 12 F, cross over the whole interarea of Base body 12, spraying plating dielectric material, for example spraying plating aluminium oxide on electrode film 40a.Thereby, the top dielectric film 40c of electrostatic chuck 40 is formed up to the thickness (D4: for example 200 μ m) of regulation.

In the present embodiment, on the interarea of Base body 12, can in spraying process, form simultaneously be used for filling protuberance 70 around (covering bottom surface sections 12a) dielectric 72 and constitute the bottom dielectric film 40b of the part of electrostatic chuck 40.

Though the pedestal 12 of above-mentioned execution mode is that columniform protuberance 70 is set, in protuberance 70, can give protuberance 70 shape arbitrarily on interarea.Figure 13 is the figure of expression according to a variation of the base construction of first execution mode.In the variation shown in Figure 13, a plurality of annular convex 70 disposes with concentric circles.That is to say, in the base construction of Figure 13 also be, when high-frequency current from electrode edge portion when central part flows, be sidelong out High frequency power to plasma P Z one expeditiously from the protuberance 70 lower than bottom surface sections 12a impedance.The area density of protuberance 70 forms the distribution character that increases gradually to electrode edge portion from electrode centers portion.Thereby, can improve the uniformity of the electric field strength of electrode radius direction, and then can realize the homogenizing of plasma density.

Figure 14 is that expression will apply to the longitudinal section of the configuration example of upper electrode according to the electrode protuberance structure of first execution mode.That is to say, as above-mentioned execution mode, on interarea, be provided as small electrode discretely and bring into play the formation of a plurality of protuberances 70 of function, such as shown in Figure 14, also can apply to stand facing each other electrode, just upper electrode.

In the configuration example of Figure 14, on the interarea of the battery lead plate 56 of shower nozzle 38 (below, just the face of the plasma span one side), dispose protuberance 70, (above the bottom surface sections 56b) configuration dielectric 72 around protuberance 70.Gas vent hole 56a can run through protuberance 70 in vertical direction and dispose.If adopt this formation, then upper electrode 38 is based on from the high-frequency current of plasma P Z and collect by protuberance 70.Thereby, at upper electrode 38 places, by suitably selecting the attribute of protuberance 70, and can further improve the uniformity of plasma density.For example the area density of protuberance 70 can be formed the distribution character that increases gradually to electrode edge portion from electrode centers portion.

Figure 15, Figure 16 and Figure 17 are respectively the plane graphs of representing electrode structure (pedestal 12) second embodiment of the invention, represent the partial longitudinal section figure of this structure, represent the figure of one of the number density distribution characteristic example of the recess in this structure.On the interarea of pedestal 12, dispose the cylindrical recess 80 of a plurality of certain sizes discretely.Just plasma P Z one side is relative with comparative electrode one side owing to these recesses 80, so, with the mode and the plasma P Z electrical bond of the impedance higher than the top part 12a of interarea.Therefore, the High frequency power of moving because of the high-frequency current i of the superficial layer of the interarea that flows through pedestal 12 is mainly emitted to plasma P Z from top part 12a.

Wherein, as shown in Figure 16, preferably in recess 80, dispose dielectric 82.Therefore, on the interarea of pedestal 12, can strengthen the impedance ratio Z of recess 80 and top part 12a ₈₀/ Z _12aThat is to say, can improve the ratio that gives the High frequency power of plasma P Z by top part 12a.

So, in the present embodiment, a plurality of recesses 80 that on the interarea of pedestal 12, are provided with discretely, the electrode mask portion performance function of the supply of the High frequency power of the relative plasma P Z of conduct inhibition respectively.Attribute by suitably selecting this recess 80 (shape, size, at interval, density etc.), and the High frequency power supply characteristics in the pedestal 12 can be controlled to desired characteristics.

For example, as shown in Figure 17, can make the individual number density of recess 80 form the distribution character that reduces gradually to electrode edge portion from electrode centers portion.Therefore, improve giving the High frequency power of plasma P Z or the uniformity of high-frequency electric field (the particularly uniformity of radial direction), and then can improve the uniformity of plasma density by pedestal 12.Other attributes of recess 80 also can similarly be handled with the protuberance 70 in first execution mode basically, for example, and the value more than three times that can set the depth dimensions and the width dimensions of recess 80 for skin depth δ.

Figure 18 A～Figure 18 F is that process sequence is represented the figure according to the manufacture method of the structure that electrostatic chuck integrally is set of second execution mode on electrode structure.

At first, as shown in Figure 18 A, on the interarea of Base body for example made of aluminum (electrode base board) 12, cover the mask that for example is formed from a resin 84 that has corresponding to the peristome 84a of recess 80.In this mask 84, the flat shape of peristome 84a and plane size block are decided the flat shape and the planar dimension of recess 80.

Then, as shown in Figure 18 B, the whole interarea by shot-peening normal direction Base body 12 above mask 84 sprays solid particle (for example dry ice bead) or fluid (water jetting at high pressure).Thereby, physically remove the material (aluminium) in the peristome 84a, form the recess 80 of desired depth there.

Then, remove mask 84 from the interarea of Base body 12.Therefore, as shown in Figure 18 C, on the interarea of Base body 12, stay a plurality of recesses 80 of given size discretely with the distribution pattern of regulation.

Then, as shown in Figure 18 D, spraying dielectric material, for example spray aluminum oxide (Al on the whole interarea of Base body 12 ₂O ₃).Thereby, form dielectric film (82,40b) to reach the thickness of specified altitude from the 12a of base top surface portion.

Then, as shown in Figure 18 E, cross over Base body 12 whole interarea and on dielectric film 40b the electrode material of spraying electrostatic chuck 40, for example spray tungsten (W).Thereby, the electrode film 40a of formation specific thickness.

Then, as shown in Figure 18 F, cross over Base body 12 whole interarea and on electrode film 40a spraying dielectric material, for example spray aluminum oxide.Thereby, top dielectric film 40c is formed up to the thickness of regulation.

In the present embodiment, on the interarea of Base body 12, can in a spraying process, form the bottom dielectric film 40b that is used for filling the dielectric 82 of recess 80 and constitutes the part of electrostatic chuck 40 simultaneously.

In addition, in the present embodiment, though omitted diagram,, also can will on the interarea of electrode, be provided as electrode mask portion discretely and bring into play the formation of a plurality of recesses of function, apply to comparative electrode, be upper electrode 38.Therefore, also can be protuberance 70 to be set in pedestal 12 1 sides, in upper electrode 38 1 sides the formation of recess 80 is set, or recess 80 is set in pedestal 12 1 sides, the formation of protuberance 70 is set in upper electrode 38 1 sides.

Figure 19 and Figure 20 are respectively the plane graph of expression according to the lower electrode structure and the upper electrode structure of the 3rd execution mode.That is to say that Figure 19 illustrates the configuration example that the 3rd execution mode is applied to pedestal 12.Figure 20 illustrates the configuration example that the 3rd execution mode is applied to upper electrode 38 (battery lead plate 56 of saying so exactly).

In the present embodiment, at the interarea of electrode, be that the face (occasion of upper electrode 38 be below, the occasion of pedestal 12 is top) of the plasma span one side is gone up configuration dielectric film or dielectric layer 90.The thickness of the dielectric film 90 of electrode centers portion constitutes the thickness greater than the dielectric film 90 of electrode edge portion.The surface of dielectric film 90 (face of the plasma span one side) forms roughly coplane.This dielectric film or dielectric layer 90 can be by for example spraying for example by aluminium oxide (Al on electrode base board made of aluminum ₂O ₃) pottery made and forming.

If adopt this electrode structure, then relatively the impedance phase of plasma P Z electrode centers portion one side is big over the ground and the impedance phase of comparative electrode edge part one side is low over the ground.Therefore, strengthen at the high-frequency electric field of electrode edge portion one side, on the other hand, in the high-frequency electric field weakening of electrode centers portion one side.Its result, the uniformity of electric field strength or plasma density improves.Particularly, in the configuration example of Figure 19, the electric current that returns to interarea one side because of skin effect from the inside one side of electrode 12 is if flow into dielectric film 90 then be easy to go out to plasma one side leakage from the little part of thickness (part that dielectric layer is thin).Therefore, emitting and plasma density of High frequency power that can intensifier electrode edge part one side.

Figure 21 is the figure of one of the parallel plate electrode structure in expression the 3rd execution mode example.Figure 22 is illustrated in the parallel plate electrode structure of Figure 21, is the figure of the interelectrode electric-field intensity distribution radially of parameter with the thickness of top electrode centers portion.In the film thickness distribution characteristic of dielectric film 90, one of important parameters is the thickness of electrode centers portion.As shown in Figure 21, in the parallel plate electrode structure of discoid dielectric film 90 is set, be that parameter is simulated and obtained interelectrode electric-field intensity distribution radially with the thickness Dc of upper electrode 38 central parts.

For this simulation, be the semiconductor wafer of 300mm bore as processed substrate supposition.Suppose that respectively upper electrode 38 is aluminium, dielectric film 90 is aluminium oxide (Al ₂O ₃), lower electrode 12 is an aluminium.As shown in Figure 22, in the scope of 0.5mm～10mm, the inner evenness of the big more then electric field strength of the thickness of electrode centers portion can improve more, and the thickness of 8mm～10mm is good especially.Wherein, the position of electrode centers point is represented in the position of " 0 " on the transverse axis of Figure 22.

In addition, the thickness of dielectric film 90 profile that reduces to change to electrode edge portion from electrode centers portion also is very important.Figure 23 A～Figure 23 D is the figure about the more specifically embodiment of the thickness profile of the dielectric film of upper electrode of expression in the 3rd execution mode.Figure 24 A and Figure 24 B represent respectively by the embodiment of Figure 23 A～Figure 23 D and the figure of the resulting interelectrode electric-field intensity distribution characteristic radially of desirable profile.

In the embodiment shown in Figure 23 A (1), the thickness D at dielectric film 90 sets for

(diameter) 0～30mm place, D=9mm (smooth, promptly constant),

30～160mm place, D=8mm (smooth),

～254mm place, D=8～3mm (inclination).In the embodiment shown in Figure 23 B (2), set for

～30mm place, D=9mm (smooth),

～80mm place, D=8mm (smooth),

～160mm place, D=8～3mm (inclination).In the embodiment shown in Figure 23 C (3), set for

～30mm place, D=9mm (smooth), ～160mm place, D=8mm (smooth),

～330mm place, D=8～3mm (inclination).

On Figure 23 D, the profile of the foregoing description (1), (2), (3) is shown concisely with curve.Simultaneously, though scheme not shown cross sectional shape, also show and be configured to

～150mm place, the embodiment (4) of D=0.5mm (smooth), and then also show desirable profile.Here, desirable profile is meant and is configured to

～300mm place, D=9～0mm (apsacline).

As shown in Figure 24 A and Figure 24 B, the electric-field intensity distribution characteristic that desirable profile produces is best aspect inner evenness.Among embodiment (1), (2), (3), (4), embodiment (1) and (3) of approaching desirable profile are all more outstanding aspect inner evenness.

Wherein, in upper electrode 38 (battery lead plate 56),,, make the bore of diameter greater than processed substrate so edge part is prolonged along radial direction and laterally because be subjected to the high-frequency current of the plasma P Z of self-diffusion.Here, also can be at the interarea place of upper electrode 38, around the dielectric film 90 or for example form the spraying plating coverlay 92 of 20 μ m thickness on the part of radial outside.Though omitted diagram, can on the internal face of chamber 10, also form same spraying plating coverlay 92.As spraying plating coverlay 92, for example can use Al ₂O ₃, Y ₂O ₃Deng.In addition, make each surface in dielectric film 90 and spraying plating coverlay 92, the face that promptly is exposed to plasma forms roughly coplane.

Figure 25 A～Figure 25 D is the figure about more specifically another embodiment of the thickness profile of the dielectric film of upper electrode of expression in the 3rd execution mode.Figure 26 A and Figure 26 B are the figure of expression by the resulting interelectrode electric-field intensity distribution characteristic radially of the embodiment of Figure 25 A～Figure 25 D.

In the embodiment shown in Figure 25 A (5), the thickness D at dielectric film 90 sets for

～250mm place, D=5mm (smooth).In the embodiment (6) of Figure 25 B, set for

～30mm place, D=9mm (smooth),

～250mm place, D=8～3mm (inclination).In the embodiment (7) of Figure 25 C, set for

～30mm place, D=9mm (smooth),

～250mm place, D=5～3mm (inclination).The profile of embodiment (5), (6), (7) is shown concisely with curve in Figure 23 D.

As shown in Figure 26 A and Figure 26 B, among these embodiment (5), (6), (7), the embodiment (6) that approaches desirable profile most is best aspect inner evenness.In addition, embodiment (5) also has enough practicality.That is to say that even as embodiment (6), towards electrode edge portion, the thickness D of dielectric film 90 also can obtain approaching the inner evenness of the desirable profile of arch almost point-blank or the profile that skewedly reduces from electrode centers portion.In addition, even as embodiment (5), from electrode centers portion towards electrode edge portion, the profile of the thickness D almost constant (smooth) of dielectric film 90, the inner evenness that also can obtain having practicality.

Figure 27 A～Figure 27 C is the figure about more specifically other embodiments of the thickness of the dielectric film of upper electrode and membranous profile of expression in the 3rd execution mode.Figure 28 A and Figure 28 B are the figure of expression by the resulting interelectrode electric-field intensity distribution characteristic radially of the embodiment of Figure 27 A～Figure 27 C.

In the embodiment shown in Figure 27 A (8), the thickness D at dielectric film 90 sets for

～30mm place, D=9mm (smooth),

～250mm place, D=8～3mm (inclination).In the embodiment (9) of Figure 27 B, set for ～30mm place, D=5mm (smooth), ～250mm place, D=5～3mm (inclination).The profile of embodiment (8), (9) is shown concisely with curve in Figure 27 C.

Here, be parameter with dielectric constant ε, embodiment (8) is divided into: the material of dielectric film 90 is the aluminium oxide (Al of dielectric constant ε=8.5 ₂O ₃) embodiment (8)-A and be the silica (SiO of ε=3.5 ₂) embodiment (8)-B.In addition, embodiment (9) is divided into too: be the aluminium oxide (Al of ε=8.5 ₂O ₃) embodiment (9)-A and be the silica (SiO of ε=3.5 ₂) embodiment (9)-B.

As shown in Figure 28 A and Figure 28 B, embodiment (the 8)-A in ε=8.5, between (9)-A, the inner evenness of (8)-A one side's electric field strength E that the thickness Dc of electrode centers portion is big is better than (9)-A.Embodiment (8)-B in ε=3.5, between (9)-B, the inner evenness of (9)-B one side's electric field strength E that the thickness Dc of electrode centers portion is little is better than (8)-B.

Figure 29 is the figure of the dependency relation of expression that the data point according to Figure 28 A and Figure 28 B the makes thickness Dc that is given in the dielectric constant ε of the practical dielectric film 90 of enough inner evenness and central part.Shown in this curve, as long as set the thickness Dc of central part corresponding to the dielectric constant ε of dielectric film 90.

Figure 30 A and Figure 30 B are with regard to the etched etch rate distribution characteristic of organic membrane, and the contrast expression applies to the embodiment A of upper electrode and the figure of comparative example B with the 3rd execution mode.Here, show the etched etch rate distribution characteristic of organic membrane (directions X, Y direction) of the plasma-etching apparatus (Fig. 1) that uses execution mode.In embodiment A, the dielectric film 90 according to the 3rd execution mode is set on upper electrode 38.In comparative example B, dielectric film 90 is not set on upper electrode 38.Wherein, embodiment A is equivalent to the foregoing description (1).Main etching condition is as described below:

Wafer bore: 300mm

Etching gas: NH ₃

Gas flow: 245sccm

Gas pressure: 30mTorr

RF electric power: bottom=2.4kW

Wafer the inside pressure (central part/edge part): 20/30Torr (He gas)

Temperature (chamber sidewall/upper electrode/lower electrode): 60/60/20 ℃.

Can find out very clearly from Figure 30 A and Figure 30 B, with the electric-field intensity distribution characteristic echo mutually aspect the inner evenness of etching speed, embodiment A one side obviously is better than comparative example B.

Figure 31 A and Figure 31 B are the embodiment A of the contrast expression structure that the 3rd execution mode applied to lower electrode and the figure of comparative example B.In the embodiment A of Figure 31 A, existing semiconductor wafer W for bore 300mm, the thickness D of the dielectric film 90 at pedestal 12 places is set at electrode centers portion place becomes 4mm, and setting at electrode edge portion place becomes 200 μ m.In the comparative example B of Figure 31 B, on pedestal 12, be provided with the dielectric film 94 of the same thickness 0.5mm.The material of dielectric film 90,94 all can be aluminium oxide (Al ₂O ₃).

Figure 32 A and Figure 32 B are with regard to the etched etch rate distribution characteristic of organic membrane, the figure of the embodiment A of contrast table diagrammatic sketch 31A and the comparative example B of Figure 31 B.Here, show the etched etch rate distribution characteristic of organic membrane (directions X, Y direction) of the plasma-etching apparatus (Fig. 1) that uses execution mode.Etching condition is identical with Figure 30 A and Figure 30 B.

As shown in Figure 32 A and Figure 32 B, in the occasion of pedestal (lower electrode) 12, the inner evenness aspect of embodiment A one side's etching speed obviously is superior to comparative example B.In addition, with regard to etching speed itself, also be that embodiment A one side is approximately big by 10% than comparative example.Wherein, though the thickness D of the dielectric film of in embodiment A electrode centers portion being located 90 sets 4mm for, even to about 9mm, also can obtain same effect greatly.

Figure 33 A and Figure 33 B represent the partial section of the embodiment of the upper electrode structure of execution mode according to another preferred.This execution mode is particularly suitable for applying to be provided with the formation of dielectric film 90 on upper electrode 38.

As shown in Figure 33 A and Figure 33 B, the barricade 100 of the conductivity of a part (edge part periphery usually) that covers dielectric film 90 is set on the interarea of upper electrode 38.This barricade 100 preferably for example is to make by (92) surperficial aluminium sheet by anodized, can be releasably by screw 102, be to be installed on upper electrode 38 replaceablely.On the central part of barricade 100, be formed with the peristome 100a of bore θ that exposes the expectation of central part with dielectric film 90 coaxially at least.The thickness of slab of barricade 100 for example can be chosen to be about 5mm.

As concrete example, in the embodiment A shown in Figure 33 A, set θ=200mm for, in the Embodiment B shown in Figure 33 B, set θ=150mm for.Among two embodiment any one all is the disc that dielectric film 90 is formed diameter 250mm, and its thickness profile is set for

～160mm place is D=8mm (smooth),

～250mm place is D=8～3mm (inclination).

Figure 34 is the figure of expression by the resulting interelectrode electric-field intensity distribution characteristic radially of the embodiment of Figure 33 A and Figure 33 B.As shown in Figure 34, cover the part of dielectric film 90 by the barricade 100 by conductivity, and can reduce or eliminate the effect of the dielectric film 90 in its overlay area, just electric field strength reduces effect.Thereby, the bore θ (by changing the part of barricade 100) of the peristome 100a by changing barricade 100, and can adjust the electric-field intensity distribution characteristic of 12,38 at two electrodes.

Figure 35 A～Figure 35 C is the partial section that represents respectively according to embodiment, comparative example and the reference example of the upper electrode structure of another execution mode of the present invention.This execution mode also is particularly suitable for applying to the formation that upper electrode 38 is provided with dielectric film 90.

As shown in Figure 35 A, in the present embodiment, on the interarea of upper electrode 38,, make the electrode part 38f in the outside stretch out the overhang (overhang) of expectation to pedestal 12 1 sides or the plasma span one side from the radial position (position of bore ω) bigger than dielectric film 90.Here, the electrode gap Gf at electrode part 38f place is less than the electrode gap Go at dielectric film 90 places.

In the embodiment A shown in Figure 35 A, the diameter of dielectric film 90 is configured to 80mm, and the thickness profile is configured to ～60mm place is D=3mm (smooth),

The 80mm place is D=3～1mm (inclination), and ω=260mm.Now, be configured to h=10mm, make the electrode gap Gf at lateral electrode extension 38f place form Gf=30mm for the electrode gap Go=40mm at dielectric film 90 places.Wherein, make the stage portion of stretching out of lateral electrode extension 38f tilt about 60 °.This inclination angle can be hanked big or small arbitrarily.

In Figure 35 B, B as a comparative example is illustrated in and on the upper electrode 38 extension 38f is not set and formation with the dielectric film 90 of same diameter dimension of embodiment A and same thickness profile is set.In addition, in Figure 35 C, C is illustrated in any one formation that extension 38f and dielectric film 90 are not set on the upper electrode 38 as a reference example.Any one electrode gap of Figure 35 B and Figure 35 C radially is being certain, is Go=40mm.

Figure 36 is the figure that represents respectively by the resulting interelectrode electric-field intensity distribution characteristic radially of embodiment A, comparative example B and reference example C of Figure 35 A～Figure 35 C.As shown in Figure 36, in embodiment A, by radial outside extension 38f is set at dielectric film 90, and make near the zone (in the illustrated embodiment, leaving the zone of the about 90mm～150mm of center radius) the edge part of semiconductor wafer W locate on the direction that improves electric field strength E, to control or to adjust the electric-field intensity distribution characteristic.The adding decrement and can be adjusted by overhang h of electric-field intensity distribution that this extension 38f causes control, is preferably more than the h=10mm.

The position of stretching out stage portion of lateral electrode extension 38f (value of bore ω) can at random be selected.Figure 37 A～Figure 37 C represents two other embodiment of upper electrode structure and the partial section of comparative example respectively.

In the embodiment of Figure 37 A, set ω=350mm for, in the embodiment of Figure 37 B, set ω=400mm for.In addition, for any one of two embodiment A, B, the thickness profile of dielectric film 90 be ～80mm place is D=8mm (smooth),

The 160mm place is D=8～3mm (inclination).The electrode gap Go=30mm at relative dielectric film 90 places, overhang is configured to h=10mm, makes the electrode gap Gf at lateral electrode extension 38f place become Gf=20mm.In addition, make the stage portion of stretching out of lateral electrode extension 38f approximately be inclined to 60 °.

In Figure 37 C, C as a comparative example is illustrated in and extension 38f is not set and the formation of the dielectric film 90 of setting and embodiment A, the same diameter dimension of B and same thickness profile on the upper electrode 38.Electrode gap is constant diametrically, is Go=30mm.

Figure 38 is the figure that represents respectively by embodiment A, B and the etched etching speed of the resulting oxide-film of comparative example C (normalized value) distribution character of Figure 37 A～Figure 37 C.As main etching condition, use the wafer bore to be 300mm, pressure is 15mTorr, processing gas is C ₄F ₆/ Ar/O ₂/ CO.In the embodiment A of Figure 35 A and Figure 35 B, B, be the formation of stretching out stage portion that the radial outside at the edge of semiconductor wafer W is provided with lateral electrode extension 38f on the interarea of upper electrode 38.As shown in Figure 38, in this constitutes, make more that to stretch out the stage portion position big more near the effect that wafer (make ω more little) then increases etching speed (just electric field strength or plasma electron density) near the zone wafer (the illustrated zone of for example leaving the about 70mm～150mm of center radius).

In the execution mode of reference Figure 35 A～Figure 38 explanation, as mentioned above, form the formation that the electrode part that makes dielectric film 90 radial outsides on the interarea of upper electrode 38 is stretched out to the plasma span.On the contrary, as shown in Figure 39 A, also can on the interarea of upper electrode 38, make dielectric film 90 stretch out the formation of overhang (overhang) k of expectation to the plasma span.Figure 39 A～Figure 39 C is the partial section that represents respectively according to embodiment, comparative example and the reference example of the upper electrode structure of another execution mode of the present invention.

In the embodiment A of Figure 39 A, the diameter of dielectric film 90 is 250mm, and its thickness profile is, ～160mm place is D=8mm (smooth),

～250mm place is D=8～3mm (inclination).Make inclined plane 90a set k=5mm for to pedestal 12 1 sides, the electrode gap Gm at dielectric film 90 places is set to Gm=35mm.The electrode part of the radial outside of dielectric film 90 is divided into tabular surface, and electrode gap Go is Go=40mm.

In Figure 39 B, B as a comparative example is illustrated in the dielectric film 90 that does not make on the upper electrode 38 with the same thickness profile of embodiment A and stretches out and be located at formation on the rightabout (inclined plane 90a is to the inboard).In addition, in Figure 39 C, C is illustrated in the formation that dielectric film 90 is not set on the upper electrode 38 as a reference example.Any one electrode gap of Figure 39 B and Figure 39 C radially all is being certain, Go=40mm.

Figure 40 is the figure that represents respectively by the resulting interelectrode electric-field intensity distribution characteristic radially of embodiment A, comparative example B and reference example C of Figure 39 A～Figure 39 C.As shown in Figure 40, as embodiment A, stretch out, compare, on each position radially, on the direction that strengthens electric field strength E, can control or adjust the electric-field intensity distribution characteristic with the comparative example B that does not do like this by making dielectric film 90.The control of electric-field intensity distribution that this extension 38 causes add decrement, can adjust by overhang k, preferably more than the k=5mm.

Figure 41 is the partial section of expression according to the upper electrode structure of the variation of the execution mode of Figure 35 A～Figure 38.As shown in Figure 41, on the interarea of upper electrode 38, extension 38f is set at the radial outside of dielectric film 90.So, also can be to make the edge part of dielectric film 90 be connected in lateral electrode extension 38f, or the edge part of dielectric film 90 formation of stretching out with lateral electrode extension 38f.

Figure 42 A～Figure 42 D is the partial section of expression according to the upper electrode structure of another execution mode of the present invention.As shown in Figure 42 A～Figure 42 D, in the present embodiment, by the dielectric that inside has the hollow in cavity 104, for example hollow ceramic constitutes the dielectric film 90 on the interarea that is arranged on upper electrode 38.In this embodiment, in hollow dielectric 90, preferably make the profile of the thickness of radial center portion one side greater than the thickness of edge part one side.

In the cavity 104 of this hollow dielectric 90, insert mobile dielectricity material NZ with the amount of expectation.Dielectricity liquid NZ in the cavity 104 constitutes the part of dielectric 90 according to its possessive volume.As this dielectricity liquid NZ, though also can be powder, organic solvent (for example heat transfer oil (ガ Le デ Application)) preferably in general.

As the port that is used for making dielectricity liquid NZ discrepancy cavity 104, for example many pipes 106,108 can be connected in the different parts (for example central part and edge part) in cavity 104 from the inside one side of electrode 38.When dielectricity liquid NZ enters the cavity 104 of hollow dielectric 90, as shown in Figure 42 B, from a side pipe 106 introduce dielectricity liquid NZ on one side, emit empty 104 interior air from the opposing party's pipe 106 on one side.When reducing the amount of the dielectricity liquid NZ in the cavity 104, as shown in Figure 42 C, as long as send into air from a side pipe 106 on one side, on one side the dielectricity liquid NZ that emit in the cavity 104 from the opposing party's pipe 106 get final product.

Figure 43 is the partial section of the specific embodiment in the execution mode of presentation graphs 42A～Figure 42 D.In the present embodiment, whole hollow dielectric 90 forms the disk of diameter 210mm, and thickness exists

～60mm place is D=6mm (smooth),

～210mm place is D=6～3mm (inclination).The cavity 104 of hollow dielectric 90, thickness alpha are 2mm, and diameter β is 180mm.

Figure 44 is the figure of expression by the resulting interelectrode electric-field intensity distribution characteristic radially of the embodiment of Figure 43.In Figure 44, the distribution character A of ε=1 is the state at Figure 42 A, and just the cavity 104 of hollow dielectric 90 is empty fully and resulting under the state that be full of by air.In addition, the distribution character B of ε=2.5 is the states at Figure 42 C, and is just resulting under the state that the cavity 104 of hollow dielectric 90 is full of fully by heat transfer oil.Enter the amount of the heat transfer oil in cavity 104 by adjustment, and can obtain the characteristic arbitrarily between two characteristic A, B.

So, in the present embodiment, enter the kind and the amount of dielectricity material NZ in the cavity 104 of hollow dielectric 90 by change, overall dielectric constant or dielectricity impedance that can variable control dielectric 90.

Figure 45 A～Figure 45 D is the partial section of expression according to the upper electrode structure of the variation of the execution mode of Figure 42 A～Figure 42 D.

In the variation of Figure 45 A, form the surface of dielectric 90 by ceramic wafer 91, in the cavity 104 of inboard, form the wall relative with ceramic wafer 91 by the basis material (aluminium) of upper electrode.That is to say, be the recess 38c that forms on the interarea of upper electrode 38 corresponding to the shape of dielectric 90, covers the formation of this recess 38c with ceramic wafer 91.For the periphery of sealing ceramic wafer 91, for example preferably be provided with containment members 110 such as O shape circle.In this occasion, recess 38c or cavity 104 shape are important, preferably remain the thickness that the makes central part one side shape greater than the thickness of edge part one side.

In the variation of Figure 45 B, C, in hollow dielectric 90, space or the cavity 104 of distributing to dielectricity liquid NZ limited or is localized in specific zone.For example, as shown in Figure 45 B, the space in cavity 104 is localized in the central part zone of dielectric 90.As an alternative, as shown in Figure 45 C, change (reducing gradually to edge part) diametrically from central division, and the space in cavity 104 relatively can be localized in the periphery zone of dielectric 90 by the thickness that makes ceramic wafer 91.So, in hollow dielectric 90, the space with empty 104 is specified in desired region or shape, thereby, in the dielectric constant adjustment function of dielectricity liquid NZ, can obtain various schemes.

In the variation of Figure 45 D, the cavities 104 in the hollow dielectric 90 are divided into a plurality of chambers and control the discrepancy of dielectricity liquid NZ at each chamber independently.For example, as shown in Figure 45, can cavity 104 be divided into two into the chamber 104A of central part one side and the chamber 104B of periphery one side by the partition wall 91a of integrally formed ring-type on ceramic wafer 91.

Though, more than preferred forms of the present invention individually has been described respectively, it also is possible that the electrode structure in the different execution modes is combined.For example, will according to the electrode structure with dielectric 90 of above-mentioned the 3rd execution mode or the execution mode below it with according to the electrode structure with protuberance 70 of above-mentioned first execution mode or to combine according to the electrode structure with recess 80 of second execution mode also be possible.

That is to say, to for example apply to pedestal 12 as shown in Figure 19 according to the electrode structure of the 3rd execution mode or the execution mode below it, utilization is possible according to the electrode structure (Fig. 2, Fig. 3) of above-mentioned first execution mode or according to the application of the electrode structure (Figure 15, Figure 16) of above-mentioned second execution mode on upper electrode 38.In addition, to apply to upper electrode 38 as shown in Figure 20 according to the electrode structure of the 3rd execution mode or the execution mode below it, utilization also is possible according to the electrode structure (Fig. 2, Fig. 3) of above-mentioned first execution mode or according to the application of the electrode structure (Figure 15, Figure 16) of above-mentioned second execution mode on pedestal 12.

Certainly, will be according to first, second, third execution mode, or the application that the electrode structure of its following execution mode applies to upper electrode and lower electrode both sides also is possible.In addition, will be according to first, second, third execution mode, or the electrode structure of its following execution mode only applies to upper electrode or lower electrode, on the opposing party's electrode, also be possible with the application of existing general electrode etc.

In addition, the plasma-etching apparatus of above-mentioned execution mode (Fig. 1) is the mode that the High frequency power that plasma generates usefulness is put on pedestal 12.But though omitted diagram, it is possible that the present invention applies to apply the mode that plasma generates the High frequency power of usefulness in upper electrode 38 1 sides.In addition, to apply to apply respectively on upper electrode 38 and pedestal 12 mode (high frequency applies formula up and down) of the first and second different High frequency power of frequency be possible in the present invention.In addition, the present invention applies to that overlapping mode (bottom two frequency overlaps apply formula) that applies the first and second different High frequency power of frequency etc. also is possible on pedestal 12.

In a broad sense, the present invention can apply to have the plasma processing apparatus of at least one electrode in the container handling that can reduce pressure.And then the present invention can also apply to other plasma processing apparatus such as plasma CVD, plasma oxidation, pecvd nitride, sputter.In addition, the processed substrate among the present invention is not limited to semiconductor wafer, and various substrates that flat-panel monitor is used or photographic mask, CD substrate, printed board etc. also are possible.

The industry practicality

If the electricity of using with plasma processing apparatus of the present invention or plasma processing apparatus Pole plate then consists of and effect by above-mentioned this kind, can realize plasma density in high efficiency ground Homogenising.

In addition, if use electrode plate manufacturing method of the present invention, then can make this in high efficiency ground What the plasma processing apparatus of invention was used is wholely set the structure of static chuck at battery lead plate.

Claims (23)

1. a plasma processing apparatus is a plasma processing apparatus of implementing plasma treatment on processed substrate, it is characterized in that, comprising:

Take in the container handling that can reduce pressure of described processed substrate;

Be arranged on first electrode in the described container handling;

In described container handling, supply with the feed system of handling gas; With

Be used to generate the plasma of described processing gas, the electric field that forms high-frequency electric field in described container handling forms system, wherein,

Described first electrode has on the interarea that is formed on described first electrode discretely and towards the side-prominent a plurality of protuberances in the space one that generates described plasma,

On the interarea of described first electrode, between described protuberance, be provided with dielectric,

On the interarea of described first electrode, the density of described protuberance is configured to increase gradually towards electrode edge portion from electrode centers portion.

2. plasma processing apparatus as claimed in claim 1 is characterized in that:

From supplying with the High frequency power that is used to generate described plasma with the inside of the opposite side of described interarea of described first electrode.

3. plasma processing apparatus as claimed in claim 1 is characterized in that:

In described container handling, also has second electrode with the described first electrode parallel opposed longer sides, from supplying with the High frequency power that is used to generate described plasma with the inside of the opposite side of described interarea of described second electrode.

4. the plasma processing apparatus described in claim 1 is characterized in that:

On the interarea of described first electrode, making the height of described protuberance and electrode width radially is by following formula (1)

δ＝(2/ωσμ) ^1/2 ……(1)

More than three times of expressed skin depth δ,

Wherein, ω=2 π f, f: frequency, σ: conductance, μ: permeability.

5. plasma processing apparatus as claimed in claim 1 is characterized in that:

The density of described protuberance is the area density of described protuberance.

6. plasma processing apparatus as claimed in claim 1 is characterized in that:

Described protuberance tool has the dimensions, and the density of described protuberance is the individual number density of described protuberance.

7. plasma processing apparatus as claimed in claim 1 is characterized in that:

Described protuberance forms cylindric.

8. plasma processing apparatus as claimed in claim 1 is characterized in that:

Described protuberance forms ring-type respectively, and its configured in one piece becomes concentric circles.

9. a plasma processing apparatus is a plasma processing apparatus of implementing plasma treatment on processed substrate, it is characterized in that, comprising:

Take in the container handling that can reduce pressure of described processed substrate;

Be arranged on first electrode in the described container handling;

In described container handling, supply with the feed system of handling gas; With

Be used to generate the plasma of described processing gas, the electric field that forms high-frequency electric field in described container handling forms system, wherein,

Described first electrode has on the interarea that is formed on described first electrode discretely and towards the recessed a plurality of recesses of space one side that generate described plasma,

In described recess, be provided with dielectric,

On the interarea of described first electrode, the density of described recess is configured to reduce gradually towards electrode edge portion from electrode centers portion.

10. plasma processing apparatus as claimed in claim 9 is characterized in that:

From supplying with the High frequency power that is used to generate described plasma with the inside of the relative side of described interarea of described first electrode.

11. plasma processing apparatus as claimed in claim 9 is characterized in that:

In described container handling, also possesses second electrode with the described first electrode parallel opposed longer sides, from supplying with the High frequency power that is used to generate described plasma with the inside of the relative side of described interarea of described second electrode.

12. plasma processing apparatus as claimed in claim 9 is characterized in that:

On the interarea of described first electrode, making described concave depth and electrode width radially is by following formula (1)

δ＝(2/ωσμ) ^1/2 ……(1)

More than three times of expressed skin depth δ,

Wherein, ω=2 π f, f: frequency, σ: conductance, μ: permeability.

13. plasma processing apparatus as claimed in claim 9 is characterized in that:

The density of described recess is the area density of described recess.

14. plasma processing apparatus as claimed in claim 9 is characterized in that:

Described recess tool has the dimensions, and the density of described recess is the individual number density of described recess.

15. plasma processing apparatus as claimed in claim 9 is characterized in that:

Described recess forms cylindric.

16. an electrode, be used for generating plasma at the plasma processing apparatus of high-frequency discharge mode and be configured in electrode in the container handling, it is characterized in that, comprising:

Have the electrode body that on the interarea of described relatively plasma, is formed with a plurality of protuberances discretely and

At the dielectric that is arranged on the described interarea between the described protuberance, wherein,

On described interarea, the density of described protuberance is configured to increase gradually towards electrode edge portion from electrode centers portion.

17. an electrode manufacturing method is the manufacture method that is used for making the described electrode of claim 32, it is characterized in that, comprising:

Make on the interarea of electrode base board, to have the operation that the mask corresponding to the peristome of described protuberance is capped,

Form in described peristome from the metal of going up spraying plating conductivity on the interarea of described electrode base board of described mask or semiconductor described protuberance operation and

Remove the operation of described mask from the interarea of described electrode base board.

18. manufacture method as claimed in claim 17 is characterized in that:

Also have spraying plating dielectric on the interarea of the described electrode base board after having removed described mask and form the operation of the first dielectric film.

19. manufacture method as claimed in claim 18 is characterized in that:

Also have after the thickness that the described first dielectric film is formed the whole interarea that covers described electrode base board, spraying plating electrode material on the described first dielectric film and form the electrode film that electrostatic chuck uses operation and

Then, spraying plating dielectric and form the operation of the second dielectric film on described electrode film.

20. an electrode, be used for generating plasma at the plasma processing apparatus of high-frequency discharge mode and be configured in electrode in the container handling, it is characterized in that, comprising:

Have the electrode body that on the interarea of described relatively plasma, forms a plurality of recesses discretely and

Be arranged on the dielectric in the described recess, wherein,

On described interarea, the density of described recess is configured to reduce gradually towards electrode edge portion from electrode centers portion.

21. an electrode manufacturing method is the electrode manufacturing method that is used for making the described electrode of claim 20, it is characterized in that, comprising:

Make on the interarea of electrode base board, to have the operation that the mask corresponding to the peristome of described recess is capped,

Establish solid particle or liquid from going up of described mask towards the interarea spray of described electrode base board, physically remove the electrode base board part in the described peristome of described electrode base board and form described recess operation and

Remove the operation of described mask from the interarea of described electrode base board.

22. manufacture method as claimed in claim 21 is characterized in that:

Also have spraying plating dielectric on the interarea of the described electrode base board after having removed described mask and form the operation of the first dielectric film.

23. manufacture method as claimed in claim 22 is characterized in that:

Also have after the thickness that the described first dielectric film is formed the whole interarea that covers described electrode base board, spraying plating electrode material on the described first dielectric film and form the electrode film that electrostatic chuck uses operation and

Then, spraying plating dielectric and form the operation of the second dielectric film on described electrode film.

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