CN104981086A - Enhanced radio frequency inductively coupled plasma discharge device - Google Patents
Enhanced radio frequency inductively coupled plasma discharge device Download PDFInfo
- Publication number
- CN104981086A CN104981086A CN201510373104.1A CN201510373104A CN104981086A CN 104981086 A CN104981086 A CN 104981086A CN 201510373104 A CN201510373104 A CN 201510373104A CN 104981086 A CN104981086 A CN 104981086A
- Authority
- CN
- China
- Prior art keywords
- end cover
- electrode coil
- hole
- discharge device
- inductively coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention relates to an enhanced radio frequency inductively coupled plasma discharge device and belongs to the low-temperature plasma application technical field. According to an existing ICP discharge device, the density of plasmas is difficult to achieve a high numerical value due to weak collision, while, with the enhanced radio frequency inductively coupled plasma discharge device of the invention adopted, the above situation can be avoided. The enhanced radio frequency inductively coupled plasma discharge device comprises an upper end cover, a lower end cover, a cylinder quartz glass tube, a plurality of long rod bolts, an inner electrode coil and an outer electrode coil; the upper end cover, the lower end cover and the cylinder quartz glass tube jointly form a vacuum cavity air chamber; a plurality of upper end mounting holes are uniformly distributed at the outer edge portion of the upper end cover along the circumferential direction of the upper end cover; an inner electrode coil mounting hole and an air inlet are formed in the upper end cover; a plurality of lower end mounting holes are uniformly distributed at the outer edge portion of the lower end cover along the circumferential direction of the lower end cover; a measurement hole and a vacuumizing hole are formed in the lower end cover, wherein the measurement hole is used for accommodating a probe-class measuring component, and the vacuumizing hole is connected with a vacuumizing system through a vacuum corrugated pipe; the outer circumferential surface of the cylinder quartz glass tube is provided with the outer electrode coil; and the inner electrode coil is arranged in the vacuum cavity air chamber and is installed in the inner electrode coil mounting hole.
Description
Technical field
The present invention relates to one and can be used for low pressure generation large area, stable plasma discharge reactor, belong to the applied technical field of low temperature plasma.
Background technology
Material surface modifying and process of surface treatment have been widely used in the process industry field in the whole world, and traditional technique mainly comprises: thermal spraying treatment, laser surface modification process, galvanoplastic, electroless plating method and chemical transferring film method, obtain tremendous development all.But some are had to the material of special construction and property, such as in process very lagre scale integrated circuit (VLSIC) manufacturing process, require the groove width etching nanometer scale on large area wafer, and along with growing technical requirement, more and more thinner etching live width is difficult to realize for traditional handicraft means.Therefore a kind of new technology---plasma treatment technique arises at the historic moment.At present in very lagre scale integrated circuit (VLSIC) manufacturing process, the operation more than 1/3rd is had to complete by plasma etching technology.
Current industrial conventional low-temp plasma source mainly contains: radio frequency capacitively coupled plasma source (CapacitivelyCoupled Plasma, CCP), Ecr plasma source (Electron Cyclotron Resonance, ECR), helicon wave plasma source (Helical Resonance, and radio frequency induction coupled plasma source (InductivelyCoupled Plasma, ICP) etc. HR).Wherein radio frequency capacitively coupled plasma source can form a uniform Electric Field Distribution between two plate electrodes, thus produces the plasma of Large-Area-Uniform distribution, for even lithographic technique provides necessary condition.But, for Single Frequency C CP source, its plasma density produced is low, and etch rate is slow, plasma density and ion energy can not independently control simultaneously, in order to improve plasma density, certainly will to improve input power, thus causing sheaths electromotive force and ion energy to increase along with the increase of power, cause high-energy ion bombardment wafer, cause wafer operations, simultaneously energetic ion sputtering chamber wall, the material sputtered out can pollute wafer.Want independent control plasma density and ion energy, need to carry out multiple power source (Multi-CCP) jointly to drive, but recent research shows that multiple power source works there is galvanomagnetic effect simultaneously, the radial direction directly affecting plasma density is uniformly distributed.Ecr plasma can produce high-density plasma under comparatively low pressure, there is higher etch rate simultaneously, independently can control ion energy simultaneously, but Ecr plasma source device executes field coil outside needing, cause installation cost greatly to improve, and control complicated.Simultaneously due to the introducing in magnetic field, ECR source is difficult to the plasma producing Large-Area-Uniform.Because helicon wave plasma source needs to execute magnetic field outside introducing equally, although comparatively ECR source reduction on cost, but still be difficult to produce Large-Area-Uniform plasma.
Radio frequency induction coupled plasma source (ICP source) is that the one put forward the nineties in last century can produce high-density plasma device, it has the following advantages: 1, compared with CCP source, ICP source does not need to adopt high-voltage radio-frequency electrode, and more highdensity plasma can be produced under lower radio-frequency power condition, thus alleviate pollution common in capacitive coupling; 2, compared with ECR source, ICP source apparatus is fairly simple, does not need to execute magnetic field means outside heavy direct current; 3, compared with HR source, the coil that ICP source adopts is fairly simple, does not need relation proportional with the wavelength of rf wave, and can obtain uniform plasma on a large scale; 4, control in plasma density and energy independent, ICP source and ECR source and Helicon source similar, the chip bench of discharge cavity indoor applies bias voltage, just can modulate ion energy.In a word, ICP source has that plasma density is high, large-area uniformity good, electric discharge air pressure is low, plasma density and incide the advantages such as on-chip ion energy can independently control and anisotropy is good.Due to above-mentioned advantage, ICP source is widely used in semiconductor manufacturing and material science etc.
ICP source mainly contains two types: one is planar coil ICP source, and namely the planar coil of a similar mosquito-repellent incense shape is seated in above the medium window of electric discharge chamber roof; Another is cylindrical coil ICP source, and its coil winding is at the sidewall of columniform quartz discharge chamber.In order to the larger plasma of density can be produced, people improve ICP source, the means of usual employing for a change discharge coil divide position, face and vacuum chamber profile, or introduce magnetic field and carry out about beam electrons and, to improve plasma density and control velocity of electrons direction, all obtain some effects.But between them, there is a common shortcoming: cannot be balanced between plasma density with air pressure, in order to ensure the uniformity of plasma density, the electric discharge air pressure of ICP electric discharge device is usually very low, be only 0.1 ~ 1Pa, under low air pressure condition, collision between charged particle and neutral particle is very weak, and plasma can realize collisionless diffusion in space, thus forms the plasma distribution of even density.But due to the more weak numerical value that plasma density must be caused to be difficult to reach very high of collision.
Summary of the invention
The present invention seeks to solve existing ICP electric discharge device due to the more weak problem that plasma density must be caused to be difficult to reach very high numerical value of collision, provide a kind of intensified radio-frequency inductively coupled plasma electric discharge device, this device (~ 20Pa) under comparatively high pressure conditions obtains high density, large area, uniform and stable plasma device.
Intensified radio-frequency inductively coupled plasma electric discharge device of the present invention, it comprises upper end cover, bottom end cover, cylinder quartz glass tube, multiple bolt of long stem, interior electrode coil and external electrode coil;
Upper end cover, bottom end cover and cylinder quartz glass tube form vacuum chamber air chamber jointly,
The peripheral rim portion that upper end cover exceeds cylinder quartz glass tube is along the circumferential direction evenly equipped with multiple upper ends installing hole, and the center of upper end cover is provided with interior loop installing hole, and upper end cover is provided with air admission hole, and described air admission hole is communicated with vacuum chamber air chamber;
The peripheral rim portion that bottom end cover exceeds cylinder quartz glass tube is along the circumferential direction evenly equipped with multiple lower ends installing hole, bottom end cover is provided with measured hole and vacuumize hole, measured hole with vacuumize Kong Junyu vacuum chamber air chamber and be communicated with; Measured hole is for placing probe class measurement component; Vacuumize hole and connect pumped vacuum systems by vacuum corrugated pipe;
The outer round surface of cylinder quartz glass tube is provided with external electrode coil; Vacuum chamber plenum interior is provided with interior electrode coil, and is arranged on interior loop installing hole place;
Upper end installing hole is fixedly connected with by bolt of long stem one_to_one corresponding with lower end installing hole.
Advantage of the present invention: (1), not sacrificing under stability precondition, effectively increases plasma density.Through experiment measuring, under same pressure, power condition, the plasma density that the plasma density that apparatus of the present invention produce produces than traditional type ICP source doubles; (2) greatly reduce the trip point of E-H patten transformation, the trip point of H-E snapback reduces simultaneously, effectively increases snapback area, makes the working range of H pattern more extensive; (3) can work under comparatively hyperbar (sub-atmospheric pressure environment ~ 100Pa), electric discharge air pressure range is increased; (4) do not use outside direct current and execute magnetic field device, cost reduces, and is also applicable to the demand of engineer applied.
Accompanying drawing explanation
Fig. 1 is the structural representation of intensified radio-frequency inductively coupled plasma electric discharge device of the present invention;
Fig. 2 is the upper end cover structural representation of Fig. 1 depression angle;
Fig. 3 is the upper end cover structural representation that Fig. 1 looks up angle;
Fig. 4 is upper end cover cutaway view;
Fig. 5 is bottom end cover cutaway view;
Fig. 6 is the system configuration schematic diagram that application apparatus of the present invention carry out testing;
Fig. 7 is sharp apparatus of the present invention and traditional IC P source gained plasma density Comparative result figure.
Embodiment
Embodiment one: present embodiment is described below in conjunction with Fig. 1 to Fig. 5, intensified radio-frequency inductively coupled plasma electric discharge device described in present embodiment, it comprises upper end cover 1, bottom end cover 2, cylinder quartz glass tube 3, multiple bolt of long stem 4, interior electrode coil 5 and external electrode coil 6;
Upper end cover 1, bottom end cover 2 and cylinder quartz glass tube 3 form vacuum chamber air chamber jointly,
The peripheral rim portion that upper end cover 1 exceeds cylinder quartz glass tube 3 is along the circumferential direction evenly equipped with multiple upper end installing hole 1-3, the center of upper end cover 1 is provided with interior loop installing hole 1-1, upper end cover 1 is provided with air admission hole 1-2, described air admission hole 1-2 is communicated with vacuum chamber air chamber;
The peripheral rim portion that bottom end cover 2 exceeds cylinder quartz glass tube 3 is along the circumferential direction evenly equipped with multiple lower end installing hole 2-3, bottom end cover 2 is provided with measured hole 2-1 and vacuumize hole 2-2, measured hole 2-1 with vacuumize hole 2-2 and be all communicated with vacuum chamber air chamber; Measured hole 2-1 is for placing probe class measurement component; Vacuumize hole 2-2 and connect pumped vacuum systems by vacuum corrugated pipe;
Upper end installing hole 1-3 is fixedly connected with by bolt of long stem 4 one_to_one corresponding with lower end installing hole 2-3.
Measured hole 2-1 and vacuumize hole 2-2 and can seal with blind plate when not using.
The outer round surface of cylinder quartz glass tube 3 is provided with external electrode coil 6; Vacuum chamber plenum interior is provided with interior electrode coil 5, and is arranged on interior loop installing hole 1-1 place; Interior electrode coil 5 utilizes cushion rubber to be closely connected with clip with between vacuum chamber air chamber, to ensure the vacuum degree in air chamber.Two electrodes (internal and external electrode coil) one end connects radio frequency power source, the in addition strict ground connection in one end.
During work, working gas enters vacuum chamber air chamber by the air admission hole 1-3 spirt of upper end cover 1, be 13.56MHz in frequency, power is under the tunable radio frequency power supply effect of 0 ~ 2000W, makes gas fraction between two electrodes breakdown thus produces the uniform and stable plasma of large-area high-density.
Electric discharge device adopts bipolar electrode loop construction, and external electrode coil 6 is wrapped in the outer round surface of cylinder quartz glass tube 3, and the interior loop installing hole 1-1 from upper end cover 1 after interior electrode coil 5 makes puts into vacuum chamber air chamber,
Interior electrode coil and external electrode coil are ICP source coil, during to ICP source coil input radio frequency power, according to Faraday's electromagnetic induction law, produce the induced field of alternation and be parallel to the eddy electric field of coil by the radio-frequency current of coil in vacuum discharge chamber.Simultaneously, owing to there is a very large electrical potential difference between the high-pressure side of coil and earth terminal, and same between coil high-pressure side with vacuum chamber wall there is larger potential gradient, therefore in vacuum chamber except there is eddy electric field, also exist axially and radial electrostatic field.Produced by eddy electric field and electrostatic field acting in conjunction and maintain the discharge process in vacuum chamber, producing high-density plasma.The electric discharge of ICP source also exists different patterns, and one is capacitive coupling pattern (Capactive coupled mode, E pattern), and its feature is that plasma density is low by (10
9~ 10
10cm
-3), electron temperature is high, and luminous intensity is weak; Another kind is inductive coupled pattern (Inductive coupled mode, H pattern), and its feature is that plasma density is high by (10
11~ 10
12cm
-3), electron temperature is low, and luminous intensity is strong.Two kinds of patterns can be changed mutually, and when electric discharge is opened, main based on E pattern under the condition that radio-frequency power is lower, it is H pattern that the increase along with power is discharged by E patten transformation.When applying in ICP source, people wish that electric discharge enters high intensity discharge, i.e. H pattern in advance as much as possible, make H pattern work in wider power bracket simultaneously.
Embodiment two: present embodiment is described further execution mode one, interior electrode coil 5 and external electrode coil 6 all adopt hollow copper tubing to make.
The hollow copper tubing two ends of interior electrode coil respectively arrange a splicing ear, for connecing cold water and being electrically connected with external control system.Two hollow copper electrode interior are travelled by water for cooling electric discharge.
Embodiment three: present embodiment is described further execution mode one, the outside of hollow copper tubing covers the heat-shrink tube for insulation between managing.
Embodiment four: present embodiment is described further execution mode one, the coil turn of interior electrode coil 5 is greater than the coil turn of external electrode coil 6.
Embodiment five: present embodiment is described further execution mode one, the lower surface of upper end cover 1 is provided with the first toroidal cavity 1-4, for the top port of stationary cylinder quartz glass tube 3, the upper surface of bottom end cover 2 is provided with the second toroidal cavity 2-4, for the bottom port of stationary cylinder quartz glass tube 3, sealing part adopts epoxy glue seal.
Embodiment six: present embodiment is described further execution mode one, the hollow copper tubing two ends of external electrode coil 6 respectively arrange a splicing ear 6-1, for connecing cold water and being electrically connected with external control system.
The set-up mode of interior electrode coil 5 is identical with external electrode coil 6.
Embodiment seven: provide a specific embodiment below in conjunction with Fig. 1 to Fig. 7.
Vacuum chamber air chamber is changed into jointly by upper end cover 1, bottom end cover 2 and cylinder quartz glass tube 3, cylinder quartz glass tube 3 adopts the column type quartz glass of external diameter Φ=160mm, wall thickness d=5mm, high h=150mm to make, upper end cover 1 and bottom end cover 2 adopt circle No. 304 corrosion resistant plates of diameter of phi=220mm, thick 5mm to make, evenly open the circular hole of 8 diameter of phi=6mm at upper end cover 1, bottom end cover 2 apart from 20mm position, edge, utilize bolt of long stem to carry out fastening.The upper surface of upper end end 1 lower surface and upper end cover 2 to have apart from center d=70mm and d=80mm position two thick be 5mm, height is the annulus of 10mm, built-in column type quartz glass between two annulus, and sealing part employing epoxy glue seal, can ensure vacuum chamber air-tightness.The circular hole of one diameter of phi=40mm is opened in upper end cover 1 center, for placing interior electrode coil 5.The air admission hole 1-3 placing one diameter of phi=10.5mm apart from d=50mm position, center installs valve for air inlet.Bottom end cover 2 is apart from 50mm position, center, symmetry respectively opens the circular hole that a diameter is Φ=40mm, and one of them connects high vacuum bellows, and another termination vacuum system of bellows is used for vacuumizing, another hole, for placing the measuring systems such as probe, can seal with blind plate when not using.
Electric discharge device adopts bipolar electrode loop construction, external electrode coil 6 adopts the hollow copper tubing of number of turn n=3, external diameter Φ=10mm, internal diameter Φ=8mm, copper pipe outside covers one deck heat-shrink tube and carries out insulating between coil and bolt, is wrapped in cylinder quartz glass tube 3 outside simultaneously; Interior electrode coil 5 adopts the hollow copper tubing of number of turn n=35, external diameter Φ=3mm, internal diameter Φ=2mm, is coiled into the coil that diameter is 24mm, coil turn spacing 0.1mm, and the outside same cover heating draw carries out turn-to-turn insulation.The inner water flowings of two electrode coils are cold, and it is the adjustable radio frequency power source of 13.56MHz, 0 ~ 2000W that outside connects frequency.
Fig. 6 is according to an embodiment of the invention, adopts intensified radio-frequency inductively coupled plasma source generating means to produce the system diagram of the uniform and stable plasma of large-area high-density.In this experiment, adopt argon gas as source of the gas, the flow of gas is controlled by mass flowmenter, coordinates it can be made to remain on specific air pressure with vacuum system.13.56M radio frequency source is being penetrated, plasma density n during electric discharge to the cold rear unlatching of hollow copper coil water flowing
eand electron temperature T
emeasured constantly by Langmuir double probe system.Under obtaining a certain air pressure by change power, plasma density is with changed power situation.
Fig. 7 to provide via experiment survey data, detailed comparisons's enhancement mode inductive coupling plasma generator and traditional ICP source under the same conditions (air pressure is 10Pa, and power is 200W), the plasma density obtained and electron temperature.Can find out: 1. adopt the present invention under the same conditions, the plasma density produced than traditional ICP source is higher, and the rate of rising is 127.5%, and electron temperature reduces 4.4% simultaneously; 2. E-H moding power reduction, snapback area increases, and more easily can enter required high density H discharge mode, maintains H mode power scope wider simultaneously; 3. more extensive than the air pressure range of traditional IC P source work.
Claims (7)
1. intensified radio-frequency inductively coupled plasma electric discharge device, it is characterized in that, it comprises upper end cover (1), bottom end cover (2), cylinder quartz glass tube (3), multiple bolt of long stem (4), interior electrode coil (5) and external electrode coil (6);
Upper end cover (1), bottom end cover (2) and cylinder quartz glass tube (3) form vacuum chamber air chamber jointly,
The peripheral rim portion that upper end cover (1) exceeds cylinder quartz glass tube (3) is along the circumferential direction evenly equipped with multiple upper ends installing hole (1-3), the center of upper end cover (1) is provided with interior loop installing hole (1-1), upper end cover (1) is provided with air admission hole (1-2), described air admission hole (1-2) is communicated with vacuum chamber air chamber;
The peripheral rim portion that bottom end cover (2) exceeds cylinder quartz glass tube (3) is along the circumferential direction evenly equipped with multiple lower ends installing hole (2-3), bottom end cover (2) be provided with measured hole (2-1) and vacuumize hole (2-2), measured hole (2-1) with vacuumize hole (2-2) and be all communicated with vacuum chamber air chamber; Measured hole (2-1) is for placing probe class measurement component; Vacuumize hole (2-2) and connect pumped vacuum systems by vacuum corrugated pipe;
The outer round surface of cylinder quartz glass tube (3) is provided with external electrode coil (6); Vacuum chamber plenum interior is provided with interior electrode coil (5), and is arranged on interior loop installing hole (1-1) place;
Upper end installing hole (1-3) is fixedly connected with by bolt of long stem (4) one_to_one corresponding with lower end installing hole (2-3).
2. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 1, it is characterized in that, interior electrode coil (5) and external electrode coil (6) all adopt hollow copper tubing to make.
3. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 2, is characterized in that, the outside of hollow copper tubing covers the heat-shrink tube for insulation between managing.
4. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 2, it is characterized in that, the coil turn of interior electrode coil (5) is greater than the coil turn of external electrode coil (6).
5. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 1, it is characterized in that, the lower surface of upper end cover (1) is provided with the first toroidal cavity (1-4), for the top port of stationary cylinder quartz glass tube (3), the upper surface of bottom end cover (2) is provided with the second toroidal cavity (2-4), for the bottom port of stationary cylinder quartz glass tube (3), sealing part adopts epoxy glue seal.
6. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 1, it is characterized in that, the hollow copper tubing two ends of external electrode coil (6) respectively arrange a splicing ear (6-1), for connecing cold water and being electrically connected with external control system.
7. intensified radio-frequency inductively coupled plasma electric discharge device according to claim 1, it is characterized in that, the hollow copper tubing two ends of interior electrode coil respectively arrange a splicing ear, for connecing cold water and being electrically connected with external control system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510373104.1A CN104981086B (en) | 2015-06-30 | 2015-06-30 | Intensified radio-frequency inductively coupled plasma electric discharge device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510373104.1A CN104981086B (en) | 2015-06-30 | 2015-06-30 | Intensified radio-frequency inductively coupled plasma electric discharge device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104981086A true CN104981086A (en) | 2015-10-14 |
| CN104981086B CN104981086B (en) | 2017-08-25 |
Family
ID=54277028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510373104.1A Active CN104981086B (en) | 2015-06-30 | 2015-06-30 | Intensified radio-frequency inductively coupled plasma electric discharge device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104981086B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105667843A (en) * | 2016-04-15 | 2016-06-15 | 哈尔滨工业大学 | Earth ring current effect space plasma ground simulation device |
| CN107087338A (en) * | 2017-05-17 | 2017-08-22 | 哈尔滨工业大学 | A kind of gas discharge type plasma density automatic regulating system and device |
| CN107086178A (en) * | 2016-02-12 | 2017-08-22 | 朗姆研究公司 | System and method for selective etch film |
| CN107920411A (en) * | 2017-11-13 | 2018-04-17 | 四川大学 | A kind of hybrid plasma body generator for silica-base material processing |
| CN107999469A (en) * | 2017-11-20 | 2018-05-08 | 安徽晓星能源科技有限公司 | A kind of midfrequent AC aura cleans power supply |
| CN108391365A (en) * | 2018-02-24 | 2018-08-10 | 佛山市万善环保科技有限公司 | A kind of double medium low temperature plasma generating means of electromagnetic induction coupling |
| CN110337170A (en) * | 2019-07-11 | 2019-10-15 | 哈尔滨工业大学 | A kind of high-density plasma jet flow generating apparatus based on current driving techniques reversed-field configuration structure |
| CN110677972A (en) * | 2019-10-17 | 2020-01-10 | 中国人民解放军国防科技大学 | Plasma generator for SiC optical mirror processing and application method thereof |
| CN112584597A (en) * | 2019-09-30 | 2021-03-30 | 中国科学院大连化学物理研究所 | Device for activating large-volume getter and enhancing adsorption rate by heating and radio frequency discharge plasma |
| CN114245558A (en) * | 2021-12-29 | 2022-03-25 | 中国科学院近代物理研究所 | Reinforcing and packaging device and method for angle pinch plasma discharge coil |
| JP7307697B2 (en) | 2020-03-26 | 2023-07-12 | 株式会社ダイヘン | Method and plasma source for detecting the state of a plasma source |
| JP7307695B2 (en) | 2020-03-26 | 2023-07-12 | 株式会社ダイヘン | Method and plasma source for detecting the state of a plasma source |
| JP7307696B2 (en) | 2020-03-26 | 2023-07-12 | 株式会社ダイヘン | Method and plasma source for detecting the state of a plasma source |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006157018A (en) * | 2004-11-29 | 2006-06-15 | Samsung Electronics Co Ltd | Electromagnetic induction accelerator |
| CN101043786A (en) * | 2006-12-06 | 2007-09-26 | 中国科学技术大学 | Inductively coupled plasma generating equipment for concave cavity coil antenna |
| KR101101364B1 (en) * | 2010-05-07 | 2012-01-02 | 유정호 | Device of generating multi plasma for processing |
| CN103065761A (en) * | 2013-01-11 | 2013-04-24 | 哈尔滨工业大学 | Generation device for uniform radial magnetic fields continuously adjustable in magnetic flux density |
-
2015
- 2015-06-30 CN CN201510373104.1A patent/CN104981086B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006157018A (en) * | 2004-11-29 | 2006-06-15 | Samsung Electronics Co Ltd | Electromagnetic induction accelerator |
| CN101043786A (en) * | 2006-12-06 | 2007-09-26 | 中国科学技术大学 | Inductively coupled plasma generating equipment for concave cavity coil antenna |
| KR101101364B1 (en) * | 2010-05-07 | 2012-01-02 | 유정호 | Device of generating multi plasma for processing |
| CN103065761A (en) * | 2013-01-11 | 2013-04-24 | 哈尔滨工业大学 | Generation device for uniform radial magnetic fields continuously adjustable in magnetic flux density |
Non-Patent Citations (1)
| Title |
|---|
| 陈志鹏: "碰撞条件下多凹腔型感应耦合等离子体组合性质和反常趋肤效应的实验研究", 《中国博士学位论文全文数据库基础科学辑》 * |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086178A (en) * | 2016-02-12 | 2017-08-22 | 朗姆研究公司 | System and method for selective etch film |
| CN107086178B (en) * | 2016-02-12 | 2023-08-04 | 朗姆研究公司 | System and method for selectively etching a film |
| CN105667843B (en) * | 2016-04-15 | 2017-11-03 | 哈尔滨工业大学 | Earth circular current Effect space plasma ground simulator |
| CN105667843A (en) * | 2016-04-15 | 2016-06-15 | 哈尔滨工业大学 | Earth ring current effect space plasma ground simulation device |
| CN107087338A (en) * | 2017-05-17 | 2017-08-22 | 哈尔滨工业大学 | A kind of gas discharge type plasma density automatic regulating system and device |
| CN107920411A (en) * | 2017-11-13 | 2018-04-17 | 四川大学 | A kind of hybrid plasma body generator for silica-base material processing |
| CN107920411B (en) * | 2017-11-13 | 2023-09-19 | 四川大学 | Hybrid plasma generator for processing silicon-based materials |
| CN107999469B (en) * | 2017-11-20 | 2021-04-27 | 安徽晓星能源科技有限公司 | Medium-frequency alternating-current glow cleaning power supply |
| CN107999469A (en) * | 2017-11-20 | 2018-05-08 | 安徽晓星能源科技有限公司 | A kind of midfrequent AC aura cleans power supply |
| CN108391365A (en) * | 2018-02-24 | 2018-08-10 | 佛山市万善环保科技有限公司 | A kind of double medium low temperature plasma generating means of electromagnetic induction coupling |
| CN110337170B (en) * | 2019-07-11 | 2021-06-22 | 哈尔滨工业大学 | High-density plasma jet generating device based on reverse field configuration structure of current driving technology |
| CN110337170A (en) * | 2019-07-11 | 2019-10-15 | 哈尔滨工业大学 | A kind of high-density plasma jet flow generating apparatus based on current driving techniques reversed-field configuration structure |
| CN112584597A (en) * | 2019-09-30 | 2021-03-30 | 中国科学院大连化学物理研究所 | Device for activating large-volume getter and enhancing adsorption rate by heating and radio frequency discharge plasma |
| CN110677972A (en) * | 2019-10-17 | 2020-01-10 | 中国人民解放军国防科技大学 | Plasma generator for SiC optical mirror processing and application method thereof |
| JP7307695B2 (en) | 2020-03-26 | 2023-07-12 | 株式会社ダイヘン | Method and plasma source for detecting the state of a plasma source |
| JP7307696B2 (en) | 2020-03-26 | 2023-07-12 | 株式会社ダイヘン | Method and plasma source for detecting the state of a plasma source |
| JP7307697B2 (en) | 2020-03-26 | 2023-07-12 | 株式会社ダイヘン | Method and plasma source for detecting the state of a plasma source |
| CN114245558B (en) * | 2021-12-29 | 2023-08-22 | 中国科学院近代物理研究所 | Reinforcing and packaging device and method for angle pinch plasma discharge coil |
| CN114245558A (en) * | 2021-12-29 | 2022-03-25 | 中国科学院近代物理研究所 | Reinforcing and packaging device and method for angle pinch plasma discharge coil |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104981086B (en) | 2017-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104981086A (en) | Enhanced radio frequency inductively coupled plasma discharge device | |
| KR101418438B1 (en) | Plasma generating apparatus | |
| JP5315243B2 (en) | Inductively coupled coil and inductively coupled plasma apparatus using the inductively coupled coil | |
| KR100338057B1 (en) | Antenna device for generating inductively coupled plasma | |
| US8992725B2 (en) | Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil | |
| US9171702B2 (en) | Consumable isolation ring for movable substrate support assembly of a plasma processing chamber | |
| KR101121418B1 (en) | Plasma generation apparatus comprising toroidal core | |
| CN110337170B (en) | High-density plasma jet generating device based on reverse field configuration structure of current driving technology | |
| US20020189763A1 (en) | Plasma processing apparatus having parallel resonance antenna for very high frequency | |
| JP2009544168A (en) | Hybrid radio frequency capacitive inductively coupled plasma source using multiple high frequency power supplies and methods of use | |
| US20150097480A1 (en) | Plasma equipment | |
| CN106298425B (en) | Improve the plasma chamber of plasma radial uniformity | |
| KR100786537B1 (en) | Multi plasama source for process chamber of semiconductor device | |
| KR20060108089A (en) | Inductively coupled plasma generating apparatus with magnetic core | |
| KR101572100B1 (en) | Plasma reactor using multi-frequency | |
| US10079134B2 (en) | Inductively coupled plasma device | |
| KR20090033877A (en) | Inductive coupling coil and inductive coupling plasma apparatus thereof | |
| CN103545164A (en) | Radio frequency plasma reaction chamber | |
| CN100527293C (en) | Inductive coupling coil and inductive coupling plasma apparatus thereof | |
| KR100455350B1 (en) | Device for prducing inductively coupled plasma and method | |
| CN101500369A (en) | Inductor coupling coil and inductor coupling plasma generation apparatus | |
| CN104918401A (en) | Inductive coupling type plasma processing apparatus | |
| KR20160125164A (en) | Method of generating large area and high density plasma | |
| CN203800009U (en) | Radio frequency plasma reaction chamber | |
| CN204733444U (en) | A kind of capacitive coupling plasma processing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |