CN101500369A - Inductor coupling coil and inductor coupling plasma generation apparatus - Google Patents
Inductor coupling coil and inductor coupling plasma generation apparatus Download PDFInfo
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- CN101500369A CN101500369A CNA2008100571252A CN200810057125A CN101500369A CN 101500369 A CN101500369 A CN 101500369A CN A2008100571252 A CNA2008100571252 A CN A2008100571252A CN 200810057125 A CN200810057125 A CN 200810057125A CN 101500369 A CN101500369 A CN 101500369A
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Abstract
The invention discloses an inductance coupling coil and an inductance coupling plasma generating device, belonging to the filed of process and production of a semiconductor. The coil comprises at least one multi-turn winding, the output end of which is connected in series with a section of an inductor. Through a movable electrical conductor slider which is arranged on the inductor, the inductor is earthed and used for changing the current distribution on the coil. The device consists of a reaction cavity, a static chuck and an inductance coupling coil, wherein the inductance coupling coil comprises at least one multi-turn winding the output end of which is connected in series with a section of inductor; through a movable electrical conductor slider which is arranged on the inductor, the inductor is earthed to change the current distribution on the inductance coupling coil. The inductance coupling coil and the inductance coupling plasma generating device effectively improve the evenness of the plasma density distribution during processing semiconductors.
Description
Technical field
The present invention relates to field of semiconductor processing and manufacturing, particularly a kind of inductance-coupled coil and inductive coupling plasma generator.
Background technology
At present, along with the high speed development of electronic technology, people require also more and more higher to the integrated level of integrated circuit, this will seek survival produce integrated circuit enterprise also constantly improve the working ability of semiconductor wafer.Plasma producing apparatus is widely used in the manufacture process of integrated circuit or MEMS device, therefore, the research and development that are applicable to the plasma producing apparatus of etching, deposition or other processing technology are vital for the development of semiconductor fabrication process and facility.Various types of plasma producing apparatus in traditional semiconductor fabrication technology, have been used, for example: types such as capacitance coupling plasma type, inductively coupled plasma type and Ecr plasma.The plasma that utilizes capacitive coupling to produce, it is simple in structure, and cost is low, but the density of the plasma of its generation is lower, is difficult to satisfy the demand of plasma etch rate and productive rate; Though Ecr plasma can obtain the higher plasma of density under lower operating air pressure, owing to need to introduce external magnetic field and microwave tube, so cost is higher relatively; Inductive coupling plasma generator is widely used in the semiconducter process such as etching, it can obtain highdensity plasma under low operating air pressure, and it is simple in structure, cost is low, can also carry out independent control to radio frequency source (decision plasma density) and the chip bench radio frequency source (particle energy on the wafer is incided in decision) that produces plasma simultaneously.
Fig. 1 shows the structural representation of inductive coupling plasma generator of the prior art, it is made up of with inductance-coupled coil 93 reaction chamber 94, electrostatic chuck 96, wherein, electrostatic chuck 96 is positioned at reaction chamber 94, be connected with radio frequency source 97 with adaptation 98, wafer 95 is installed on the electrostatic chuck 96; Inductance-coupled coil 93 is positioned at reaction chamber 94 tops and is connected with power supply 91 with adaptation 92.In semiconductor fabrication processes, the process gas that enters reaction chamber 94 is coupled to the energy ionization formation plasma of reaction chamber 94 from top inductance-coupled coil 93, the material on plasma etching wafer 95 surfaces that generate is used the residue process gas in the molecular pump extraction reaction chamber 94.In the process on etched wafer 95 surfaces, the radio-frequency power that makes gas ionization form plasma comes from inductance-coupled coil 93, inductance-coupled coil 93 be used to provide the power supply 91 of radio-frequency current to link to each other by adaptation 92, along with radio-frequency current flows into inductance-coupled coil 93, around inductance-coupled coil 93, can produce magnetic field, and, in reaction chamber 94, generate electric field along with the function of magnetic field as the time; Process gas in the reaction chamber 94 is ionized by the electron collision with the acceleration of induced electricity place simultaneously, thereby in reaction chamber 94, produce plasma, chemical reaction is carried out on the plasma and wafer 95 surfaces that produce, and wafer 95 is carried out certain processing, for example etching; In addition, also need on electrostatic chuck 96, connect radio-frequency power supply, be used to provide bias voltage, so that increase the energy of ions of plasma and wafer 95 collisions.Fig. 2 shows the structural representation of inductance-coupled coil 93 of the prior art, inductance-coupled coil 93 is the snail structure, generally the lead that is twined by single spiral constitutes, its input (input) links to each other with the output of adaptation 92, and output (output) is by tunable capacitor ground connection or direct ground connection.
In the research and development of the plasma producing apparatus that is used for semiconductor fabrication process, most important factor is the ability of working on big substrate, so that improve productive rate, and carries out the ability that is used to make height integrated device technology.Along with wafer size in recent years increases to 300mm from 200mm, make and improve the uniformity of processing of wafers technology and keep higher plasma density to become extremely important.In inductive coupling plasma generator, make gas ionization form the needed radio-frequency power of plasma and come from inductance-coupled coil, at present from most of process results, the plasma that inductance-coupled coil produces exists very big azimuthal asymmetry, the inhomogeneities that causes plasma density, and then caused the inhomogeneous of etch rate, in general, etch rate is slow in the middle of the silicon chip, fast all around, this has just brought very adverse influence to semiconductor fabrication process, and it is in particular in following aspect:
1. when the pressure of process gas is higher, when for example the pressure of process gas is 10-100mTorr, the annular region plasma density of wafer 95 tops is higher, the plasma density of center and peripheral part is lower, and this radially inhomogeneities in reaction chamber 94 can't rely on plasma diffusion and eliminate, and then caused the inhomogeneities of etch rate;
When wafer size when 200mm increases to 300mm, need to increase the size of reaction chamber 94, for keeping satisfying the large-area high-density plasma of technological requirement, just need to increase the length and the number of turns of inductance-coupled coil, when the length of inductance-coupled coil increases, can cause transmission line effect, be on the inductance-coupled coil everywhere the amplitude of electric current and voltage change along with change in location, the inhomogeneities that causes electromagnetic field to distribute thus, and then influence the even distribution of plasma density, further, also can cause the inductance of inductance-coupled coil to increase, too high inductance is difficult to the conjugate impedance match of realization to inductance-coupled coil, is difficult to obtain to be used for the equally distributed plasma of large-area high-density of semiconductor machining;
3. when the direct ground connection of output of inductance-coupled coil, can not adjust the current amplitude in the inductance-coupled coil; When the inductance-coupled coil output passes through tunable capacitor ground connection of series connection, because the scope of tunable capacitor is limited, therefore also be difficult to realize that by the resistance of adjusting tunable capacitor needed electric current and voltage distributes, and then can't obtain the equally distributed plasma of density.
Summary of the invention
For in the process of semiconducter process, make the surface of the work that is etched obtain uniform etch rate, the invention provides a kind of inductance-coupled coil and inductive coupling plasma generator.
Inductance-coupled coil provided by the invention comprises the winding of at least one multiturn number, and insert one section inductance in the series connection of the output of described winding, has a movably electric conductor slide block on the described inductance, described inductance is used to change the CURRENT DISTRIBUTION on the described coil by described electric conductor slide block ground connection.
The turn-to-turn of described coil mid portion is apart from the turn-to-turn distance greater than described coil edge part, and the turn-to-turn of described hub of a spool part is apart from the turn-to-turn distance greater than described coil edge part, and less than the turn-to-turn distance of described coil mid portion.
The length of described inductance is greater than λ/4 and less than λ/2, and wherein λ is the wavelength that electromagnetic wave transmits in described coil.
Described inductance is made of at least one section spiral line.
Described inductance is made of at least one section curved line.
Inductive coupling plasma generator provided by the invention is made up of reaction chamber, electrostatic chuck and inductance-coupled coil, described inductance-coupled coil comprises the winding of at least one multiturn number, and insert one section inductance in the series connection of the output of described winding, has a movably electric conductor slide block on the described inductance, described inductance is used to change the CURRENT DISTRIBUTION on the described inductance-coupled coil by described electric conductor slide block ground connection.
The turn-to-turn of described inductance-coupled coil mid portion is apart from the turn-to-turn distance greater than described inductance-coupled coil marginal portion, the turn-to-turn of described inductance-coupled coil core is apart from the turn-to-turn distance greater than described inductance-coupled coil marginal portion, and less than the turn-to-turn distance of described inductance-coupled coil mid portion.
The length of described inductance is greater than λ/4 and less than λ/2, and wherein λ is the wavelength that electromagnetic wave transmits in described inductance-coupled coil.
Described inductance is made of at least one section spiral line.
Described inductance is made of at least one section curved line.
The beneficial effect of technical scheme provided by the invention is: inductance-coupled coil provided by the invention and inductive coupling plasma generator have improved the plasma density of inductance-coupled coil core and marginal portion effectively, reduce the plasma density of inductance-coupled coil mid portion, thereby improved the uniformity that semiconductor machining ionic medium volume density distributes.
Description of drawings
Fig. 1 is the structural representation of inductive coupling plasma generator of the prior art;
Fig. 2 is the structural representation of inductance-coupled coil of the prior art;
Fig. 3 is the inductance-coupled coil planar structure schematic diagram that the embodiment of the invention provides;
Fig. 4 is the simplex winding coil plane structural representation that the embodiment of the invention provides.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
The inductance-coupled coil that the embodiment of the invention provides comprises the winding of at least one multiturn number, and insert one section inductance in the series connection of the output of winding, have a movably electric conductor slide block on the inductance, inductance is used to change the CURRENT DISTRIBUTION on the inductance-coupled coil by electric conductor slide block ground connection.Wherein, winding can but be not limited to constitute by planar coil, inductance can but be not limited to the simplex winding coil, inductance-coupled coil can be by nested the composing in parallel of a plurality of identical branches; Be l with a segment length after the lead-out terminal parallel connection of each branch
0The input of simplex winding coil link to each other, the output of simplex winding coil is by an electric conductor slide block ground connection.
In order to improve the plasma density of the workpiece that is etched (for example wafer) core and marginal portion, in concrete production practices, the turn-to-turn of inductance-coupled coil mid portion is apart from the turn-to-turn distance greater than the inductance-coupled coil marginal portion, the turn-to-turn of inductance-coupled coil core is apart from the turn-to-turn distance greater than the inductance-coupled coil marginal portion, and less than the turn-to-turn distance of inductance-coupled coil mid portion.
In actual applications, the simplex winding coil can be made of one or more snippets helix, can also be made of its length l one or more snippets curved line
0Span can be λ/4＜l
0＜λ/2, wherein λ is the wavelength that electromagnetic wave transmits in inductance-coupled coil, this wavelength is less than the electromagnetic wavelength of free space; The earthing position of simplex winding coil can be by the electric conductor slide block with manual mode or automated manner along himself at (λ/4, l
0) scope in adjust, thereby change the distribution of the standing wave electric current on the inductance-coupled coil; According to transmission line effect, when the earthing position of simplex winding coil is adjusted to certain position, can make the maximum of points of current amplitude in the branch of inductance-coupled coil be positioned at outermost one circle of inductance-coupled coil, so just can improve the plasma density of the marginal portion of inductance-coupled coil; In addition, because the length l of simplex winding coil
0Can be in (λ/4, λ/2) change in the scope, so pass through tunable capacitor ground connection with respect to the prior art inductance-coupled coil, because the earthing position of inductance-coupled coil can in very large range change, therefore can carry out wider adjustment to the current amplitude in the inductance-coupled coil.
In order more clearly to describe the technical scheme that present embodiment provides, be illustrated below by a concrete example, referring to Fig. 3 and Fig. 4:
The inductance-coupled coil 101 that present embodiment provides is by 2 identical branch 102 nested composing in parallel, 2 identical branches 102 are made of 3 sections coils respectively, input terminal 103 backs in parallel of 2 identical branches 102 link to each other with the output of adaptation 92 shown in Figure 1, lead-out terminal 104 backs in parallel of 2 identical branches 102 link to each other with the input terminal 202 of simplex winding coil 201, and the lead-out terminal 204 of simplex winding coil 201 is by electric conductor slide block 203 ground connection; The length of simplex winding coil 201 is 0.45 λ, and wherein λ is the wavelength that electromagnetic wave transmits in inductance-coupled coil 101, and this wavelength is less than the electromagnetic wavelength of free space; The turn-to-turn of inductance-coupled coil 101 marginal portions is apart from minimum, the turn-to-turn of inductance-coupled coil 101 mid portions is apart from the turn-to-turn distance greater than inductance-coupled coil 101 marginal portions, the turn-to-turn of inductance-coupled coil 101 cores is apart from the turn-to-turn distance greater than the inductance-coupled coil marginal portion, and less than the turn-to-turn distance of inductance-coupled coil mid portion; 3 sections coils of branch 102 can adopt the arc coil to realize, for example can be 3 sections spiral of Archimedes with different parameters; In the practical application, adjust the ground contact length of simplex winding coil 201 by electric conductor slide block 203, and then the distribution of the standing wave electric current on the change inductance-coupled coil 101, can make the maximum of points of the current amplitude on the inductance-coupled coil 101 be positioned at its outmost circle by the position of adjusting electric conductor slide block 203, increase the magnetic field intensity of inductance-coupled coil 101 marginal portions like this, and then improved the plasma density of the workpiece that is etched (for example wafer) marginal portion.
The embodiment of the invention also provides a kind of inductive coupling plasma generator, this device is made up of reaction chamber, electrostatic chuck and inductance-coupled coil, inductance-coupled coil comprises the winding of at least one multiturn number, and insert one section inductance in the series connection of the output of winding, has a movably electric conductor slide block on the inductance, inductance is used to change the CURRENT DISTRIBUTION on the inductance-coupled coil by electric conductor slide block ground connection.Wherein, winding can but be not limited to constitute by planar coil, inductance can but be not limited to the simplex winding coil, inductance-coupled coil can be by nested the composing in parallel of a plurality of identical branches; Be l with a segment length after the lead-out terminal parallel connection of each branch
0The input of simplex winding coil link to each other, the output of simplex winding coil is by an electric conductor slide block ground connection.
In order to improve the plasma density of the workpiece that is etched (for example wafer) core and marginal portion, in concrete production practices, the turn-to-turn of inductance-coupled coil mid portion is apart from the turn-to-turn distance greater than the inductance-coupled coil marginal portion, the turn-to-turn of inductance-coupled coil core is apart from the turn-to-turn distance greater than the inductance-coupled coil marginal portion, and less than the turn-to-turn distance of inductance-coupled coil mid portion.
In actual applications, the simplex winding coil can be made of one or more snippets helix, can also be made of its length l one or more snippets curved line
0Span can be λ/4＜l
0＜λ/2, wherein λ is the wavelength that electromagnetic wave transmits in inductance-coupled coil, this wavelength is less than the electromagnetic wavelength of free space;
The inductance-coupled coil that the embodiment of the invention provides is not only by nested the composing in parallel of a plurality of identical branches, and the turn-to-turn of inductance-coupled coil core is apart from less, the turn-to-turn of marginal portion is apart from minimum, the turn-to-turn of mid portion is apart from bigger, so just improved the plasma density of inductance-coupled coil core and marginal portion, reduce the plasma density of inductance-coupled coil mid portion, thereby improved the uniformity that semiconductor machining ionic medium volume density distributes; Further, the inductance-coupled coil that the embodiment of the invention provides is owing to adopt the mode of nested parallel connection to constitute, therefore reduced the inductance of inductance-coupled coil, solved being difficult to of causing because inductance-coupled coil is excessive effectively to realize conjugate impedance match problem inductance-coupled coil; Further, the inductance-coupled coil that the embodiment of the invention provides is because at one section simplex winding coil of its output series connection, and the output of simplex winding coil is by electric conductor slide block ground connection, because the electric conductor slide block can slide along the simplex winding coil, so the earthing position of simplex winding coil can be adjusted along the length of simplex winding coil, thereby can carry out wider adjustment to the current amplitude on the inductance-coupled coil, when the amplitude maximum of points of standing wave electric current is positioned at outermost one circle of inductance-coupled coil on the earthing position by adjustment simplex winding coil makes inductance-coupled coil, can improve the plasma density of inductance-coupled coil marginal portion effectively, make that the plasma density of inductance-coupled coil marginal portion is even, thereby obtain homogeneous plasma.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. inductance-coupled coil, it is characterized in that, described coil comprises the winding of at least one multiturn number, and insert one section inductance in the series connection of the output of described winding, has a movably electric conductor slide block on the described inductance, described inductance is used to change the CURRENT DISTRIBUTION on the described coil by described electric conductor slide block ground connection.
2. inductance-coupled coil as claimed in claim 1, it is characterized in that, the turn-to-turn of described coil mid portion is apart from the turn-to-turn distance greater than described coil edge part, the turn-to-turn of described hub of a spool part is apart from the turn-to-turn distance greater than described coil edge part, and less than the turn-to-turn distance of described coil mid portion.
3. inductance-coupled coil as claimed in claim 1 is characterized in that, the length of described inductance is greater than λ/4 and less than λ/2, and wherein λ is the wavelength that electromagnetic wave transmits in described coil.
4. as claim 1 or 3 described inductance-coupled coils, it is characterized in that described inductance is made of at least one section spiral line.
5. as claim 1 or 3 described inductance-coupled coils, it is characterized in that described inductance is made of at least one section curved line.
6. inductive coupling plasma generator, described device is made up of reaction chamber, electrostatic chuck and inductance-coupled coil, it is characterized in that, described inductance-coupled coil comprises the winding of at least one multiturn number, and insert one section inductance in the series connection of the output of described winding, have a movably electric conductor slide block on the described inductance, described inductance is used to change the CURRENT DISTRIBUTION on the described inductance-coupled coil by described electric conductor slide block ground connection.
7. inductive coupling plasma generator as claimed in claim 6, it is characterized in that, the turn-to-turn of described inductance-coupled coil mid portion is apart from the turn-to-turn distance greater than described inductance-coupled coil marginal portion, the turn-to-turn of described inductance-coupled coil core is apart from the turn-to-turn distance greater than described inductance-coupled coil marginal portion, and less than the turn-to-turn distance of described inductance-coupled coil mid portion.
8. inductive coupling plasma generator as claimed in claim 6 is characterized in that, the length of described inductance is greater than λ/4 and less than λ/2, and wherein λ is the wavelength that electromagnetic wave transmits in described inductance-coupled coil.
9. as claim 6 or 8 described inductive coupling plasma generators, it is characterized in that described inductance is made of at least one section spiral line.
10. as claim 6 or 8 described inductive coupling plasma generators, it is characterized in that described inductance is made of at least one section curved line.
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| CN2008100571252A CN101500369B (en) | 2008-01-30 | 2008-01-30 | Inductor coupling coil and inductor coupling plasma generation apparatus |
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| CN2008100571252A CN101500369B (en) | 2008-01-30 | 2008-01-30 | Inductor coupling coil and inductor coupling plasma generation apparatus |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103209537A (en) * | 2009-10-27 | 2013-07-17 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN109255174A (en) * | 2018-08-31 | 2019-01-22 | 桂林电子科技大学 | Magnet coupled resonant type wireless energy transmission coil simulating analysis |
| CN113133175A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Plasma inductance coil structure, plasma processing equipment and processing method |
| CN113496863A (en) * | 2020-04-01 | 2021-10-12 | 吉佳蓝科技股份有限公司 | Plasma antenna module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7571697B2 (en) * | 2001-09-14 | 2009-08-11 | Lam Research Corporation | Plasma processor coil |
| US6855225B1 (en) * | 2002-06-25 | 2005-02-15 | Novellus Systems, Inc. | Single-tube interlaced inductively coupling plasma source |
| JP4439169B2 (en) * | 2002-09-10 | 2010-03-24 | 株式会社アルバック | Vacuum processing method and vacuum apparatus |
| CN100527294C (en) * | 2005-02-25 | 2009-08-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupled coil and inductance coupled plasma device |
| CN1925074B (en) * | 2005-08-29 | 2010-08-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Induction coupling coil and induction coupling plasma device |
| CN2907173Y (en) * | 2006-02-24 | 2007-05-30 | 苏州大学 | Large-area parallel connected high density inductively coupled plasma source |
| JP2007311182A (en) * | 2006-05-18 | 2007-11-29 | Tokyo Electron Ltd | Inductively-coupled plasma processing device, and plasma processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103209537A (en) * | 2009-10-27 | 2013-07-17 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN109255174A (en) * | 2018-08-31 | 2019-01-22 | 桂林电子科技大学 | Magnet coupled resonant type wireless energy transmission coil simulating analysis |
| CN109255174B (en) * | 2018-08-31 | 2022-07-22 | 桂林电子科技大学 | Magnetic coupling resonant wireless energy transmission coil simulation analysis method |
| CN113133175A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Plasma inductance coil structure, plasma processing equipment and processing method |
| CN113133175B (en) * | 2019-12-31 | 2024-02-09 | 中微半导体设备(上海)股份有限公司 | Plasma inductance coil structure, plasma processing equipment and processing method |
| CN113496863A (en) * | 2020-04-01 | 2021-10-12 | 吉佳蓝科技股份有限公司 | Plasma antenna module |
| CN113496863B (en) * | 2020-04-01 | 2022-04-12 | 吉佳蓝科技股份有限公司 | Plasma antenna module |
| CN113740582A (en) * | 2021-07-27 | 2021-12-03 | 中国电力科学研究院有限公司 | Magnetic field induction coil group for multi-dimensional balance magnetic field measurement, magnetic field sensing array and measurement system |
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