CN104981058A - Half-bridge control and drive type gate driver based on bootstrap circuit - Google Patents
Half-bridge control and drive type gate driver based on bootstrap circuit Download PDFInfo
- Publication number
- CN104981058A CN104981058A CN201510334410.4A CN201510334410A CN104981058A CN 104981058 A CN104981058 A CN 104981058A CN 201510334410 A CN201510334410 A CN 201510334410A CN 104981058 A CN104981058 A CN 104981058A
- Authority
- CN
- China
- Prior art keywords
- pin
- polar capacitor
- pole
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Dc-Dc Converters (AREA)
Abstract
The present invention discloses a half-bridge control and drive type gate driver based on a bootstrap circuit. The half-bridge control and drive type gate driver comprises the bootstrap circuit, a drive chip M and a drive circuit connected with the drive chip M. The half-bridge control and drive type gate driver is characterized in that a half-bridge control and drive circuit is further arranged at the input end of the bootstrap circuit. The half-bridge control and drive type gate driver has a very simple structure and is very convenient to manufacture and use. Meanwhile, according to the half-bridge control and drive type gate driver disclosed by the present invention, the starting time is only 1/4 of that of the existing gate drive circuit and is extremely short; and in addition, by using the half-bridge control and drive circuit as an auxiliary drive circuit and a GR6953 integrated circuit as a processing chip, the half-bridge control and drive type gate driver is faster in drive speed and has the advantage of starting with low power consumption, so that compared to that of the existing drive system, the power consumption of the half-bridge control and drive type gate driver is reduced by 1/2.
Description
Technical field
The present invention relates to a kind of LED drive circuit, specifically refer to that a kind of half-bridge based on boostrap circuit controls drive-type gate drivers.
Background technology
At present, because LED has, energy consumption is low, the feature such as long service life and safety and environmental protection, and it has become one of main product of people's life lighting.Because LED is different from traditional incandescent lamp, therefore its needs are driven by special drive circuit.But, the widely used gate driver circuit of current people due to the irrationality of its project organization, defects such as result in current gate driver circuit and have that energy consumption is higher, current noise comparatively large and start-up time is longer.
Summary of the invention
The object of the invention is to the defect that energy consumption is higher, current noise is comparatively large and start-up time is longer overcoming the existence of current gate driver circuit, provide a kind of half-bridge based on boostrap circuit to control drive-type gate drivers.
Object of the present invention is achieved through the following technical solutions: a kind of half-bridge based on boostrap circuit controls drive-type gate drivers, it is by boostrap circuit, driving chip M, the drive circuit be connected with driving chip M, and the half-bridge being arranged on boostrap circuit input controls drive circuit composition.
Further, described half-bridge controls drive circuit by process chip U1, field effect transistor MOS1, triode Q2, N pole is connected with the emitter of triode Q2, the diode D3 of P pole then as input together with the source electrode of field effect transistor MOS1 after resistance R6, positive pole is connected with the P pole of diode D3, the polar capacitor C7 of minus earth, the voltage stabilizing didoe D2 be in parallel with polar capacitor C7, positive pole is connected with the RT pin of process chip U1 after resistance R9, the polar capacitor C9 that negative pole is then connected with the grid of field effect transistor MOS1 after resistance R7, be serially connected in the resistance R8 between the grid of field effect transistor MOS1 and source electrode, positive pole is connected with the CT pin of process chip U1, the polar capacitor C8 that negative pole is then connected with the drain electrode of field effect transistor MOS1, one end is connected with the HV pin of process chip U1, the resistance R10 that the other end is then connected with the base stage of triode Q2, and P pole is connected with the VS pin of process chip U1, the diode D4 that N pole is then connected with boostrap circuit forms, the negative pole of described polar capacitor C9 is then connected with boostrap circuit, the VCC pin of described process chip U1 is connected with N pole with the P pole of diode D3 respectively with its VB pin, and its SGND pin is all connected with the negative pole of polar capacitor C9 with VS pin, its PGND pin ground connection, the collector electrode of described triode Q2 is connected with the negative pole of polar capacitor C9.
And this boostrap circuit is by field effect transistor MOS, one end is connected with the source electrode of field effect transistor MOS, the resistance R5 of other end ground connection, positive pole is connected with the source electrode of field effect transistor MOS, the polar capacitor C6 that negative pole is connected with the INP pin of driving chip M, negative pole is connected with the grid of field effect transistor MOS, the polar capacitor C1 that positive pole is connected with the drain electrode of field effect transistor MOS after resistance R1, the resistance R2 be in parallel with polar capacitor C1, positive pole is connected with the positive pole of polar capacitor C1, the polar capacitor C5 that negative pole is connected with the source electrode of field effect transistor MOS, and one end is connected with the positive pole of polar capacitor C5, the resistance R4 of other end ground connection forms, the drain electrode of described field effect transistor MOS is also connected with the VCC pin of driving chip M, and the positive pole of this polar capacitor C1 is also connected with the N pole of diode D4, and the positive pole of polar capacitor C5 is then connected with the negative pole of polar capacitor C9.
Described drive circuit is by transformer T, be serially connected with the diode D1 between the VCC pin of driving chip M and BOOST pin, be serially connected with the electric capacity C2 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R3 between the TG pin of driving chip M and TS pin, and base stage is connected with the TG pin of driving chip M, collector electrode in turn after electric capacity C3 and electric capacity C4 ground connection and the transistor Q1 of grounded emitter form; The Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C4 with electric capacity C3, ground connection after its non-same polarity is then connected with the emitter of transistor Q1; Meanwhile, the emitter of transistor Q1 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
For guaranteeing result of use, described driving chip M preferentially adopts LTC4440A integrated chip to realize, and described process chip U1 is then preferably GR6953 integrated chip and realizes.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) overall structure of the present invention is very simple, and it makes and very easy to use.
(2) be only 1/4 of conventional gate drive circuit start-up time start-up time of the present invention, its start-up time is extremely short.
(3) the present invention adopts boostrap circuit to provide control signal for driving chip, therefore has very high input impedance, can guarantee the stable performance of whole circuit.
(4) the present invention adopts half-bridge to control drive circuit as associated drive circuitry, and adopt GR6953 integrated circuit as process chip, make its actuating speed faster, and there is the advantage of low-power consumption startup, thus the drive system making observable index of the present invention traditional reduces by 1/2.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention by boostrap circuit, driving chip M, the drive circuit be connected with driving chip M, and be arranged on boostrap circuit input half-bridge control drive circuit composition.
Described boostrap circuit is made up of field effect transistor MOS, polar capacitor C1, polar capacitor C5, polar capacitor C6, resistance R1, resistance R2, resistance R4 and resistance R5.During connection, one end of resistance R5 is connected with the source electrode of field effect transistor MOS, its other end ground connection; The positive pole of polar capacitor C6 is connected with the source electrode of field effect transistor MOS, and its negative pole is connected with the INP pin of driving chip M; The negative pole of polar capacitor C1 is connected with the grid of field effect transistor MOS, and its positive pole is connected with the drain electrode of field effect transistor MOS after resistance R1, and resistance R2 is then in parallel with polar capacitor C1.
The positive pole of described polar capacitor C5 is connected with the positive pole of polar capacitor C1, and its negative pole is connected with the source electrode of field effect transistor MOS.And one end of resistance R4 is connected with the positive pole of polar capacitor C5, its other end ground connection.Meanwhile, the positive pole of positive pole and the polar capacitor C5 of this polar capacitor C1 all controls drive circuit with pass bridge and is connected.
For guaranteeing the normal work of field effect transistor MOS and driving chip M, therefore the drain electrode of this field effect transistor MOS is also connected with the VCC pin of driving chip M, and the VCC pin of this driving chip M needs the power supply of external+12V.
For guaranteeing result of use, the high-frequency N-channel MOS FET grid drive chip that this driving chip M preferentially adopts Linear Techn Inc. to produce, namely LTC4440A integrated chip realizes.The feature of this driving chip M is can with the input voltage work up to 80V, and can up to can continuous operation during 100V transient state.
Described drive circuit is then made up of transformer T, diode D1, electric capacity C2, resistance R3, electric capacity C3, electric capacity C4 and transistor Q1.During connection, the P pole of diode D1 is connected with the VCC pin of driving chip M, and its N pole is then connected with the BOOST pin of driving chip M.The positive pole of electric capacity C2 is connected with the BOOST pin of driving chip M, and its negative pole is then connected with the TG pin of driving chip M.For guaranteeing the normal operation of driving chip M, its VCC holds the voltage needing external+12V.
Resistance R3 is divider resistance, and it is serially connected with between the TG pin of driving chip M and TS pin.The base stage of transistor Q1 is then connected with the TG pin of driving chip M, and its collector electrode is ground connection after electric capacity C3 and electric capacity C4 in turn, its grounded emitter.Meanwhile, the collector electrode of this transistor Q1 also needs the direct voltage of external+6V, to guarantee that transistor Q1 has enough bias voltages to drive himself conducting.
For guaranteeing result of use, described electric capacity C2, electric capacity C3 and electric capacity C4 all adopt patch capacitor to realize.Described transformer T exports to outside field effect transistor after being used for that+the 6V of outside direct voltage is carried out transformation process.
The Same Name of Ends of the primary coil of this transformer T is connected with the tie point of electric capacity C4 with electric capacity C3, ground connection after its non-same polarity is then connected with the emitter of transistor Q1.Meanwhile, the emitter of transistor Q1 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
The Same Name of Ends of the secondary coil of transformer T, tap Y1, tap Y2 together with the non-same polarity of secondary coil as output of the present invention.According to the situation of reality, user can only select any one or several port of these four outputs to use.
Described half-bridge controls drive circuit by process chip U1, field effect transistor MOS1, triode Q2, N pole is connected with the emitter of triode Q2, the diode D3 of P pole then as input together with the source electrode of field effect transistor MOS1 after resistance R6, positive pole is connected with the P pole of diode D3, the polar capacitor C7 of minus earth, the voltage stabilizing didoe D2 be in parallel with polar capacitor C7, positive pole is connected with the RT pin of process chip U1 after resistance R9, the polar capacitor C9 that negative pole is then connected with the grid of field effect transistor MOS1 after resistance R7, be serially connected in the resistance R8 between the grid of field effect transistor MOS1 and source electrode, positive pole is connected with the CT pin of process chip U1, the polar capacitor C8 that negative pole is then connected with the drain electrode of field effect transistor MOS1, one end is connected with the HV pin of process chip U1, the resistance R10 that the other end is then connected with the base stage of triode Q2, and P pole is connected with the VS pin of process chip U1, the diode D4 that N pole is then connected with boostrap circuit forms.
During connection, the negative pole of this polar capacitor C9 is then connected with boostrap circuit; The VCC pin of described process chip U1 is connected with N pole with the P pole of diode D3 respectively with its VB pin, and its SGND pin is all connected with the negative pole of polar capacitor C9 with VS pin, its PGND pin ground connection.The collector electrode of described triode Q2 is connected with the negative pole of polar capacitor C9.
Field effect transistor MOS1 can control the voltage of input processing U1, and process U1 is better driven.This process chip U1 preferentially adopts GR6953 type integrated chip to realize, and it has single power supply and the advantages such as built-in 20V voltage stabilizing circuit, low-power consumption startup.
As mentioned above, just the present invention can well be realized.
Claims (5)
1. the half-bridge based on boostrap circuit controls a drive-type gate drivers, and it is by boostrap circuit, driving chip M, and the drive circuit be connected with driving chip M forms, and it is characterized in that, is also provided with half-bridge controls drive circuit at boostrap circuit input, described half-bridge controls drive circuit by process chip U1, field effect transistor MOS1, triode Q2, N pole is connected with the emitter of triode Q2, the diode D3 of P pole then as input together with the source electrode of field effect transistor MOS1 after resistance R6, positive pole is connected with the P pole of diode D3, the polar capacitor C7 of minus earth, the voltage stabilizing didoe D2 be in parallel with polar capacitor C7, positive pole is connected with the RT pin of process chip U1 after resistance R9, the polar capacitor C9 that negative pole is then connected with the grid of field effect transistor MOS1 after resistance R7, be serially connected in the resistance R8 between the grid of field effect transistor MOS1 and source electrode, positive pole is connected with the CT pin of process chip U1, the polar capacitor C8 that negative pole is then connected with the drain electrode of field effect transistor MOS1, one end is connected with the HV pin of process chip U1, the resistance R10 that the other end is then connected with the base stage of triode Q2, and P pole is connected with the VS pin of process chip U1, the diode D4 that N pole is then connected with boostrap circuit forms, the negative pole of described polar capacitor C9 is then connected with boostrap circuit, the VCC pin of described process chip U1 is connected with N pole with the P pole of diode D3 respectively with its VB pin, and its SGND pin is all connected with the negative pole of polar capacitor C9 with VS pin, its PGND pin ground connection, the collector electrode of described triode Q2 is connected with the negative pole of polar capacitor C9.
2. a kind of half-bridge based on boostrap circuit according to claim 1 controls drive-type gate drivers, it is characterized in that, and this boostrap circuit is by field effect transistor MOS, one end is connected with the source electrode of field effect transistor MOS, the resistance R5 of other end ground connection, positive pole is connected with the source electrode of field effect transistor MOS, the polar capacitor C6 that negative pole is connected with the INP pin of driving chip M, negative pole is connected with the grid of field effect transistor MOS, the polar capacitor C1 that positive pole is connected with the drain electrode of field effect transistor MOS after resistance R1, the resistance R2 be in parallel with polar capacitor C1, positive pole is connected with the positive pole of polar capacitor C1, the polar capacitor C5 that negative pole is connected with the source electrode of field effect transistor MOS, and one end is connected with the positive pole of polar capacitor C5, the resistance R4 of other end ground connection forms, the drain electrode of described field effect transistor MOS is also connected with the VCC pin of driving chip M, and the positive pole of this polar capacitor C1 is also connected with the N pole of diode D4, and the positive pole of polar capacitor C5 is then connected with the negative pole of polar capacitor C9.
3. a kind of half-bridge based on boostrap circuit according to claim 2 controls drive-type gate drivers, it is characterized in that, described drive circuit is by transformer T, be serially connected with the diode D1 between the VCC pin of driving chip M and BOOST pin, be serially connected with the electric capacity C2 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R3 between the TG pin of driving chip M and TS pin, and base stage is connected with the TG pin of driving chip M, collector electrode in turn after electric capacity C3 and electric capacity C4 ground connection and the transistor Q1 of grounded emitter form; The Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C4 with electric capacity C3, ground connection after its non-same polarity is then connected with the emitter of transistor Q1; Meanwhile, the emitter of transistor Q1 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
4. a kind of half-bridge based on boostrap circuit according to claim 3 controls drive-type gate drivers, and it is characterized in that, described driving chip M is LTC4440A integrated chip.
5. a kind of half-bridge based on boostrap circuit according to claim 4 controls drive-type gate drivers, and it is characterized in that, described process chip U1 is GR6953 integrated chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510334410.4A CN104981058A (en) | 2014-11-22 | 2015-06-13 | Half-bridge control and drive type gate driver based on bootstrap circuit |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674836.XA CN104470077A (en) | 2014-11-22 | 2014-11-22 | Gate driver based on bootstrap circuit |
| CN201410674836X | 2014-11-22 | ||
| CN201510334410.4A CN104981058A (en) | 2014-11-22 | 2015-06-13 | Half-bridge control and drive type gate driver based on bootstrap circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104981058A true CN104981058A (en) | 2015-10-14 |
Family
ID=52915228
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410674836.XA Pending CN104470077A (en) | 2014-11-22 | 2014-11-22 | Gate driver based on bootstrap circuit |
| CN201510334410.4A Pending CN104981058A (en) | 2014-11-22 | 2015-06-13 | Half-bridge control and drive type gate driver based on bootstrap circuit |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410674836.XA Pending CN104470077A (en) | 2014-11-22 | 2014-11-22 | Gate driver based on bootstrap circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN104470077A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109921779A (en) * | 2019-02-28 | 2019-06-21 | 电子科技大学 | A kind of straight-through protection circuit of half-bridge circuit |
-
2014
- 2014-11-22 CN CN201410674836.XA patent/CN104470077A/en active Pending
-
2015
- 2015-06-13 CN CN201510334410.4A patent/CN104981058A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109921779A (en) * | 2019-02-28 | 2019-06-21 | 电子科技大学 | A kind of straight-through protection circuit of half-bridge circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104470077A (en) | 2015-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104968095A (en) | Power-amplification-type gate drive system based on half-bridge control drive circuit | |
| CN104470105A (en) | Logic protection amplifying grid drive system based on bootstrap circuit | |
| CN104981058A (en) | Half-bridge control and drive type gate driver based on bootstrap circuit | |
| CN104411047A (en) | Energy-saving power-amplifying-type grid driving system | |
| CN104393742A (en) | Power amplifying circuit and excitation circuit based mixed type gate driving system | |
| CN204316789U (en) | A kind of self-locking optical excitation raster data model system based on power amplification | |
| CN104485804A (en) | Novel logic protection emitter coupling type gate driving system | |
| CN104394629A (en) | Novel gate drive system | |
| CN204335023U (en) | A kind of gate drivers based on boostrap circuit | |
| CN104411054A (en) | Same-phase alternating-current signal amplification type optical excitation gate drive system based on logic protection amplification circuit | |
| CN204335037U (en) | A kind of virtual protection amplifying type raster data model system based on boostrap circuit | |
| CN104968088A (en) | Grid driving system used for LED lamp protection system based on boost voltage stabilizing circuit | |
| CN104470116A (en) | Mixed type grid driving system | |
| CN204316796U (en) | A kind of energy-saving power amplification formula raster data model system | |
| CN204316804U (en) | A kind of novel grid drive system | |
| CN104507205A (en) | Power amplification-based self-locking light-exciting gate driving system | |
| CN204316791U (en) | A kind of power amplification formula raster data model system | |
| CN204305403U (en) | Based on the mixed type raster data model system of power amplification circuit and energizing circuit | |
| CN204335053U (en) | A kind of mixed type raster data model system | |
| CN104411063A (en) | Hybrid gate drive system based on logic protection coupled amplifying circuit | |
| CN204316782U (en) | A kind of mixed type raster data model system | |
| CN204316792U (en) | A kind of power amplification formula mixed type raster data model system | |
| CN104470103A (en) | Logic protection amplification type self-locking optical excitation grid drive system | |
| CN204335030U (en) | A kind of virtual protection amplifying type self-locking optical excitation raster data model system | |
| CN204335046U (en) | A kind of mixed type raster data model system of logic-based protection manifold type amplifying circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151014 |