CN104470077A - Gate driver based on bootstrap circuit - Google Patents
Gate driver based on bootstrap circuit Download PDFInfo
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- CN104470077A CN104470077A CN201410674836.XA CN201410674836A CN104470077A CN 104470077 A CN104470077 A CN 104470077A CN 201410674836 A CN201410674836 A CN 201410674836A CN 104470077 A CN104470077 A CN 104470077A
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Abstract
The invention discloses a gate driver based on a bootstrap circuit. The gate driver is mainly composed of a drive chip M and a drive circuit connected with the drive chip M. The gate driver is characterized by being further provided with the bootstrap circuit; the bootstrap circuit is composed of a field-effect transistor MOS, a resistor R5, a polar capacitor C6, a polar capacitor C1 and the like, wherein one end of the resistor R5 is connected with the source electrode of the field-effect transistor MOS, the other end of the resistor R5 is grounded, the positive electrode of the polar capacitor C6 is connected with the source electrode of the field-effect transistor MOS, the negative electrode of the polar capacitor C6 is connected with an INP pin of the drive chip M, the negative electrode of the polar capacitor C1 is connected with the gate of the field-effect transistor MOS, and the positive electrode of the polar capacitor C1 is connected with the drain electrode of the field-effect transistor MOS. The gate driver is simple in overall structure and very convenient to manufacture and use; meanwhile, the start time of the gate driver is only 1/4 that of a traditional gate drive circuit, and the start time of the gate driver is extremely short.
Description
Technical field
The present invention relates to a kind of LED drive circuit, specifically refer to a kind of gate drivers based on boostrap circuit.
Background technology
At present, because LED has, energy consumption is low, the feature such as long service life and safety and environmental protection, and it has become one of main product of people's life lighting.Because LED is different from traditional incandescent lamp, therefore its needs are driven by special drive circuit.But, the widely used gate driver circuit of current people due to the irrationality of its project organization, defects such as result in current gate driver circuit and have that energy consumption is higher, current noise comparatively large and start-up time is longer.
Summary of the invention
The object of the invention is to the defect that energy consumption is higher, current noise is comparatively large and start-up time is longer overcoming the existence of current gate driver circuit, a kind of reasonable in design is provided, can effectively reduce energy consumption and current noise, obviously shorten a kind of gate drivers based on boostrap circuit of start-up time.
Object of the present invention is achieved through the following technical solutions: a kind of gate drivers based on boostrap circuit, and primarily of driving chip M, and the drive circuit be connected with driving chip M forms.Simultaneously, also be provided with boostrap circuit, and this boostrap circuit is by field effect transistor MOS, one end is connected with the source electrode of field effect transistor MOS, the resistance R5 of other end ground connection, positive pole is connected with the source electrode of field effect transistor MOS, the polar capacitor C6 that negative pole is connected with the INP pin of driving chip M, negative pole is connected with the grid of field effect transistor MOS, the polar capacitor C1 that positive pole is connected with the drain electrode of field effect transistor MOS after resistance R1, the resistance R2 be in parallel with polar capacitor C1, positive pole is connected with the positive pole of polar capacitor C1, the polar capacitor C5 that negative pole is connected with the source electrode of field effect transistor MOS, and one end is connected with the positive pole of polar capacitor C5, the resistance R4 of other end ground connection forms, the drain electrode of described field effect transistor MOS is also connected with the VCC pin of driving chip M.
Described drive circuit is by transformer T, be serially connected with the diode D1 between the VCC pin of driving chip M and BOOST pin, be serially connected with the electric capacity C2 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R3 between the TG pin of driving chip M and TS pin, and base stage is connected with the TG pin of driving chip M, collector electrode in turn after electric capacity C3 and electric capacity C4 ground connection and the transistor Q1 of grounded emitter form; The Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C4 with electric capacity C3, ground connection after its non-same polarity is then connected with the emitter of transistor Q1; Meanwhile, the emitter of transistor Q1 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
For guaranteeing result of use, described driving chip M preferentially adopts LTC4440A integrated chip to realize.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) overall structure of the present invention is very simple, and it makes and very easy to use.
(2) be only 1/4 of conventional gate drive circuit start-up time start-up time of the present invention, its start-up time is extremely short.
(3) the present invention adopts boostrap circuit to provide control signal for driving chip, therefore has very high input impedance, can guarantee the stable performance of whole circuit.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the gate drivers based on boostrap circuit of the present invention, primarily of driving chip M, the drive circuit be connected with driving chip M, and the boostrap circuit be connected with driving chip M forms.
Described boostrap circuit is made up of field effect transistor MOS, polar capacitor C1, polar capacitor C5, polar capacitor C6, resistance R1, resistance R2, resistance R4 and resistance R5.During connection, one end of resistance R5 is connected with the source electrode of field effect transistor MOS, its other end ground connection; The positive pole of polar capacitor C6 is connected with the source electrode of field effect transistor MOS, and its negative pole is connected with the INP pin of driving chip M; The negative pole of polar capacitor C1 is connected with the grid of field effect transistor MOS, and its positive pole is connected with the drain electrode of field effect transistor MOS after resistance R1, and resistance R2 is then in parallel with polar capacitor C1.
The positive pole of described polar capacitor C5 is connected with the positive pole of polar capacitor C1, and its negative pole is connected with the source electrode of field effect transistor MOS.And one end of resistance R4 is connected with the positive pole of polar capacitor C5, its other end ground connection.
For guaranteeing the normal work of field effect transistor MOS and driving chip M, therefore the drain electrode of this field effect transistor MOS is also connected with the VCC pin of driving chip M, and the VCC pin of this driving chip M needs the power supply of external+12V.
For guaranteeing result of use, the high-frequency N-channel MOS FET grid drive chip that this driving chip M preferentially adopts Linear Techn Inc. to produce, namely LTC4440A integrated chip realizes.The feature of this driving chip M is can with the input voltage work up to 80V, and can up to can continuous operation during 100V transient state.
Described drive circuit is then made up of transformer T, diode D1, electric capacity C2, resistance R3, electric capacity C3, electric capacity C4 and transistor Q1.During connection, the P pole of diode D1 is connected with the VCC pin of driving chip M, and its N pole is then connected with the BOOST pin of driving chip M.The positive pole of electric capacity C2 is connected with the BOOST pin of driving chip M, and its negative pole is then connected with the TG pin of driving chip M.For guaranteeing the normal operation of driving chip M, its VCC holds the voltage needing external+12V.
Resistance R3 is divider resistance, and it is serially connected with between the TG pin of driving chip M and TS pin.The base stage of transistor Q1 is then connected with the TG pin of driving chip M, and its collector electrode is ground connection after electric capacity C3 and electric capacity C4 in turn, its grounded emitter.Meanwhile, the collector electrode of this transistor Q1 also needs the direct voltage of external+6V, to guarantee that transistor Q1 has enough bias voltages to drive himself conducting.
For guaranteeing result of use, described electric capacity C2, electric capacity C3 and electric capacity C4 all adopt patch capacitor to realize.Described transformer T exports to outside field effect transistor after being used for that+the 6V of outside direct voltage is carried out transformation process.
The Same Name of Ends of the primary coil of this transformer T is connected with the tie point of electric capacity C4 with electric capacity C3, ground connection after its non-same polarity is then connected with the emitter of transistor Q1.Meanwhile, the emitter of transistor Q1 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
The Same Name of Ends of the secondary coil of transformer T, tap Y1, tap Y2 together with the non-same polarity of secondary coil as output of the present invention.According to the situation of reality, user can only select any one or several port of these four outputs to use.
As mentioned above, just the present invention can well be realized.
Claims (3)
1. the gate drivers based on boostrap circuit, primarily of driving chip M, and the drive circuit to be connected with driving chip M forms, it is characterized in that, also be provided with boostrap circuit, and this boostrap circuit is by field effect transistor MOS, one end is connected with the source electrode of field effect transistor MOS, the resistance R5 of other end ground connection, positive pole is connected with the source electrode of field effect transistor MOS, the polar capacitor C6 that negative pole is connected with the INP pin of driving chip M, negative pole is connected with the grid of field effect transistor MOS, the polar capacitor C1 that positive pole is connected with the drain electrode of field effect transistor MOS after resistance R1, the resistance R2 be in parallel with polar capacitor C1, positive pole is connected with the positive pole of polar capacitor C1, the polar capacitor C5 that negative pole is connected with the source electrode of field effect transistor MOS, and one end is connected with the positive pole of polar capacitor C5, the resistance R4 of other end ground connection forms, the drain electrode of described field effect transistor MOS is also connected with the VCC pin of driving chip M.
2. a kind of gate drivers based on boostrap circuit according to claim 1, it is characterized in that, described drive circuit is by transformer T, be serially connected with the diode D1 between the VCC pin of driving chip M and BOOST pin, be serially connected with the electric capacity C2 between the BOOST pin of driving chip M and TG pin, be serially connected with the resistance R3 between the TG pin of driving chip M and TS pin, and base stage is connected with the TG pin of driving chip M, collector electrode in turn after electric capacity C3 and electric capacity C4 ground connection and the transistor Q1 of grounded emitter form; The Same Name of Ends of the primary coil of described transformer T is connected with the tie point of electric capacity C4 with electric capacity C3, ground connection after its non-same polarity is then connected with the emitter of transistor Q1; Meanwhile, the emitter of transistor Q1 is also connected with the TS pin of driving chip M, and the secondary coil of described transformer T is provided with tap Y1 and tap Y2.
3. a kind of gate drivers based on boostrap circuit according to claim 2, is characterized in that, described driving chip M is LTC4440A integrated chip.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674836.XA CN104470077A (en) | 2014-11-22 | 2014-11-22 | Gate driver based on bootstrap circuit |
| CN201510334410.4A CN104981058A (en) | 2014-11-22 | 2015-06-13 | Half-bridge control and drive type gate driver based on bootstrap circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674836.XA CN104470077A (en) | 2014-11-22 | 2014-11-22 | Gate driver based on bootstrap circuit |
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| Publication Number | Publication Date |
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| CN104470077A true CN104470077A (en) | 2015-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410674836.XA Pending CN104470077A (en) | 2014-11-22 | 2014-11-22 | Gate driver based on bootstrap circuit |
| CN201510334410.4A Pending CN104981058A (en) | 2014-11-22 | 2015-06-13 | Half-bridge control and drive type gate driver based on bootstrap circuit |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201510334410.4A Pending CN104981058A (en) | 2014-11-22 | 2015-06-13 | Half-bridge control and drive type gate driver based on bootstrap circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109921779B (en) * | 2019-02-28 | 2020-06-30 | 电子科技大学 | Half-bridge circuit through protection circuit |
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2014
- 2014-11-22 CN CN201410674836.XA patent/CN104470077A/en active Pending
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- 2015-06-13 CN CN201510334410.4A patent/CN104981058A/en active Pending
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| CN104981058A (en) | 2015-10-14 |
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Application publication date: 20150325 |