CN104979368B - A kind of infrared detector array and preparation method thereof - Google Patents
A kind of infrared detector array and preparation method thereof Download PDFInfo
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- CN104979368B CN104979368B CN201510368985.8A CN201510368985A CN104979368B CN 104979368 B CN104979368 B CN 104979368B CN 201510368985 A CN201510368985 A CN 201510368985A CN 104979368 B CN104979368 B CN 104979368B
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Abstract
The present invention provides a kind of infrared detector array and preparation method thereof, the design feature of the infrared detector array is to make two groups of temperature responsive units B1 and B2 in the hanging bridge structure of non-refrigeration infrared detector pixel, other two groups of temperature responsive units S1 and S2 are made on substrate, this four groups of temperature responsive units are connected by wheatstone bridge form again, difference output electric signal, circuit noise is inhibited, the signal to noise ratio of device can be significantly increased.The characteristics of preparation method of the present invention, is：When discharging dot structure, first etching tank is etched in the substrate, then using anisotropic etchant corrosion silicon release dot structure, improve corrosion release efficiency, and corrosion shape and depth are controllable, it can avoid sticking together between pixel and substrate, the manufacture craft of anchor not corrode most silicon as the anchor of pixel, can also be simplified.
Description
Technical field
The invention belongs to microelectromechanical systems field, more particularly to a kind of infrared detector array and its making side
Method.
Background technology
Infrared detector is the device that extraneous infra-red radiation can be transformed into other physical quantitys easily measured, according to explorer
Reason infrared detector can be divided into photon type and Bolometer, after the former absorbs photon using detector, electronic state hair itself
It is raw to change, so as to cause the photon effects such as inner photoeffect and external photoeffect；The latter using detector absorb it is infrared after itself
Temperature raises, so as to cause the physical property of sensing element to change to realize detection.Photon detector is generally based on narrow
Energy gap semi-conducting material designs and produces, and in order to reduce device noise, it is necessary to chilling unit, therefore cost is higher, safeguards
Cost is higher；And refrigeration is not needed typically during Bolometer work, it can at normal temperatures work, reduce manufacturing cost, more
Beneficial to large-scale production.In recent years, as uncooled infrared imager is technically constantly progressive, the application of the technology is from tradition
Military field extend to each department of the national economy such as electric power, fire-fighting, industry, medical treatment, security protection.Non-refrigeration infrared detector
Huge commercial value potentiality promote the fast development of non-refrigeration infrared detector.
Non-refrigeration infrared detector mainly includes amorphous silicon type, vanadium oxide type and diode-type infrared detector, their profits
Infrared signal is converted into measurable electrical signal with the temperature-sensing property of non-crystalline silicon, vanadium oxide and diode, directly believed this
Processing number is amplified so as to obtain infrared signal.The present invention proposes to connect several sensing units using Wheatstone bridge, to carry
The signal to noise ratio of high device, and reduce the influence of environmental background temperature change.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of infrared detector array and its
Preparation method, it is low for solving the signal to noise ratio of infrared detector in the prior art, and influenceed by environmental background temperature change big
The problem of.
In order to achieve the above objects and other related objects, the present invention provides a kind of infrared detector array, the infrared spy
Surveying device array includes several pixels, and the pixel includes：
Substrate, formed with a cavity, the substrate surface is also formed with first medium layer, is produced on institute the substrate surface
State first medium layer surface the first temperature responsive unit and the second temperature responsive unit, formed in first temperature responsive unit and the second temperature-sensitive
The first metal layer of cell surface, first be coated on first temperature responsive unit and the second temperature responsive unit and the first metal layer
Passivation layer and the metallic reflector for being covered in first passivation layer surface；
Hanging bridge structure, vacantly it is connected above the cavity and by support beam with the substrate, the hanging bridge structure bag
Include second dielectric layer, the 3rd temperature responsive unit for being produced on the second medium layer surface and the 4th temperature responsive unit, formed the 3rd
The second metal layer on temperature responsive unit and the 4th temperature responsive unit surface and it is coated on the 3rd temperature responsive unit and the 4th temperature-sensitive list
The second passivation layer in member and second metal layer；
The support beam is included described in the 3rd dielectric layer, the 3rd metal level being produced on the 3rd dielectric layer and cladding
3rd passivation layer of the 3rd metal level；
By described between first temperature responsive unit, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th temperature responsive unit
3rd metal level connects to form Wheatstone bridge.
Alternatively, the support beam is vacantly above the cavity, and one end of the support beam is connected with substrate.
Alternatively, the 3rd metal level is individual layer electrical wiring.
Alternatively, the 3rd metal level is double-deck electrical wiring, and each layer includes two electrical wirings, between interlayer electrical wiring
Isolated by the 3rd passivation layer.
Alternatively, first temperature responsive unit, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th temperature responsive unit use phase
Same material and technique make, and structural parameters are identical.
Alternatively, first temperature responsive unit, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th temperature responsive unit include
At least one temperature-sensitive element.
Alternatively, the temperature-sensitive element is one kind in non-crystalline silicon thermistor, vanadium oxide thermistor or diode.
Alternatively, each pixel includes first temperature responsive unit and second temperature responsive unit；Or multiple pictures
Plain public first temperature responsive unit and second temperature responsive unit.
The present invention also provides a kind of preparation method of infrared detector array, and methods described includes：
1) substrate is provided, somatomedin layer and function material layer are sequentially depositing in the substrate surface；
2) the graphical function material layer, the dielectric layer surface formed the first temperature responsive unit, the second temperature responsive unit,
3rd temperature responsive unit and the 4th temperature responsive unit；
3) deposited metal and graphical, to form the first gold medal on first temperature responsive unit, the second temperature responsive unit surface
Belong to layer, formed in the 3rd temperature responsive unit and the 4th temperature responsive unit surface formation second metal layer, in the dielectric layer surface
3rd metal level, pass through institute between first temperature responsive unit, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th temperature responsive unit
The 3rd metal level is stated to connect to form Wheatstone bridge；
4) deposit passivation layer, and formed in passivation layer surface corresponding with first temperature responsive unit, the second temperature responsive unit
Metallic reflector；
5) passivation layer, dielectric layer and the substrate are etched, with the substrate and the first temperature responsive unit, the second temperature responsive unit
Between form first medium layer, the 3rd dielectric layer, the substrate and the 3rd temperature-sensitive are formed between the substrate and the 3rd metal level
Second dielectric layer is formed between unit and the 4th temperature responsive unit, it is blunt that first is formed between the first metal layer and metallic reflector
Change layer, the 3rd layer on surface of metal forms the 3rd passivation layer, and the second metal layer surface forms the second passivation layer, the lining
Etching tank is formed in bottom；The second dielectric layer, the 3rd temperature responsive unit, the 4th temperature responsive unit, second metal layer and the second passivation
Layer forms hanging bridge structure, and the 3rd dielectric layer, the 3rd metal level and the 3rd passivation layer form support beam；
6) continue to corrode the substrate, the corrosion groove corrosion is formed into a cavity, makes the hanging bridge structure and support
Beam is hanging.
Alternatively, the 3rd metal level formed in the step 3) is the electrical wiring of part Wheatstone bridge, such case
Under, the step 4) includes：Deposit passivation layer, and in passivation layer corresponding with first temperature responsive unit, the second temperature responsive unit
Surface forms metallic reflector, while re-forms one layer of the 3rd metal level in passivation layer surface corresponding to the 3rd metal level and make
For electrical wiring, this two layers of the 3rd metal level is used for connecting first temperature responsive unit, the second temperature responsive unit, the 3rd temperature-sensitive list together
Member and the 4th temperature responsive unit form Wheatstone bridge.
Alternatively, the substrate is SOI substrate, then the top layer silicon in SOI, Zhi Hou are first eroded in the step 1)
Direct growth function material layer on SOI oxygen buried layer；In step 2) thermosensitive resistance type is formed after the graphical function material layer
The first temperature responsive unit, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th temperature responsive unit.
Alternatively, the substrate in the step 1) is SOI substrate, then in step 2) directly by the use of SOI top layer silicon as
Function material layer, the first temperature responsive unit of diode-type, the second temperature responsive unit, the 3rd are formed after the graphical function material layer
Temperature responsive unit and the 4th temperature responsive unit.
As described above, infrared detector array of the present invention and preparation method thereof, if the infrared detector array includes
Dry pixel, the pixel include：Substrate, the substrate surface are also formed with first formed with a cavity, the substrate surface
Dielectric layer, the first temperature responsive unit and the second temperature responsive unit, the first metal layer, the first passivation layer and metallic reflector；Hanging bridge knot
Structure, vacantly it is connected above the cavity and by support beam with the substrate, the hanging bridge structure includes second dielectric layer, the
Three temperature responsive units and the 4th temperature responsive unit, second metal layer and the second passivation layer；The support beam include the 3rd dielectric layer,
3rd metal level and the 3rd passivation layer；First temperature responsive unit, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th heat
Connect to form Wheatstone bridge by the 3rd metal level between quick unit.The present invention is by wheatstone bridge form by four groups
Temperature responsive unit connects, difference output electric signal, it is suppressed that circuit noise, can significantly increase the signal to noise ratio of device.This hair
The characteristics of bright preparation method, is：When discharging dot structure, deep trouth is first etched in a silicon substrate, then using anisotropy
Corrosive agent corrosion silicon release dot structure, improves corrosion release efficiency, and corrodes shape and depth is controllable, can avoid pixel and
Sticked together between substrate, the manufacture craft of anchor not corrode most silicon as the anchor of pixel, can also be simplified.
Brief description of the drawings
Tetra- temperature responsive units of Fig. 1 use the schematic diagram of wheatstone bridge form connection.
Fig. 2 is the dot structure scanning electron microscope (SEM) photograph of four beams support.
Fig. 3 a are the dot structure top view of two beams support.
Fig. 3 b are the diagrammatic cross-section of temperature responsive unit on hanging bridge.
Fig. 4 a-4g are the process chart of embodiment one.
Fig. 5 a-5h are the process chart of embodiment two.
Component label instructions
1 substrate
2 function material layers
12 the 3rd temperature responsive units
13 the 4th temperature responsive units
14 first temperature responsive units
15 second temperature responsive units
3 dielectric layers
31 first medium layers
32 second dielectric layer
33 the 3rd dielectric layers
4 metal levels
41 the first metal layers
42 second metal layers
43rd, 10 the 3rd metal level
5 ohmic contact regions
6 metallic reflectors
7th, 16 passivation layer
71 first passivation layers
72 second passivation layers
73 the 3rd passivation layers
8 etching tanks
9 cavitys
11 temperature-sensitive elements
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to accompanying drawing.It should be noted that only explanation is of the invention in a schematic way for the diagram provided in the present embodiment
Basic conception, then in schema only display with relevant component in the present invention rather than according to component count during actual implement, shape
Shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its component cloth
Office's kenel may also be increasingly complex.
Embodiment one
A kind of infrared detector array of offer of the present embodiment, such as accompanying drawing 2 and accompanying drawing 4g (along the AA ' sections in Fig. 2)
Shown, the array includes several dot structures, and the dot structure is the hanging bridge structure (as can be seen from Figure 2) of four beams support.Institute
State specifically including for dot structure：
Substrate 1, formed with a cavity 9, the surface of substrate 1 is also formed with first medium layer 31, system on the surface of substrate 1
Make in first temperature responsive unit 14 on the surface of first medium layer 31 and the second temperature responsive unit 15, formed in the first temperature-sensitive list
The first metal layer 41 on member 14 and the surface of the second temperature responsive unit 15, it is coated on the temperature responsive unit of the first temperature responsive unit 14 and second
15 and the first passivation layer 71 on the first metal layer 41 and the metallic reflector 6 for being covered in the surface of the first passivation layer 71；
Hanging bridge structure, vacantly it is connected above the cavity 9 and by support beam with the substrate 1, the hanging bridge structure
Including second dielectric layer 32, be produced on the surface of second dielectric layer 32 the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13,
Formed the 3rd temperature responsive unit 12 and the surface of the 4th temperature responsive unit 13 second metal layer 42 and be coated on the 3rd temperature-sensitive
The second passivation layer 72 in the temperature responsive unit 13 of unit 12 and the 4th and second metal layer 42；
The support beam includes the 3rd dielectric layer 33, the 3rd metal level 43 being produced on the 3rd dielectric layer 33 and bag
Cover the 3rd passivation layer 73 of the 3rd metal level 43；
Between first temperature responsive unit 14, the second temperature responsive unit 15, the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13
Wheatstone bridge is formed by the 3rd metal level 43 connection,
First temperature responsive unit 14, the second temperature responsive unit 15, the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13 pass through
3rd metal level 43 draws electric signal, is connected with outer signals process circuit；Metal level (the first metal layer 41, the second gold medal
Belong to layer 42, the 3rd metal level 43) on passivation layer (the first passivation layer 71, the second passivation layer 72, the 3rd passivation layer 73) to
Realize electrical isolation；Dielectric layer 3 and passivation layer all have the function of absorbing infra-red radiation.
It is worth noting that：Each pixel has one group of the 3rd temperature responsive unit 12 and one group of the 4th temperature responsive unit 13 (i.e.
B1 and B2 in Fig. 1), but for the first temperature responsive unit 14 and second temperature responsive unit 15 (i.e. S1 and S2 in Fig. 1), can
To be that each pixel has, but in order to save chip area or this public two groups of temperature responsive unit S1 of multiple pixels and
S2, such as per a line or the public two groups of temperature responsive units S1 and S2 of each row pixel.
In the present embodiment, the pixel is supported by four support beams, now, for connecting first temperature responsive unit
14th, the 3rd metal level 43 of the second temperature responsive unit 15, the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13 is individual layer electrical wiring.
The support beam vacantly above the cavity 9, and one end of the support beam is connected with substrate 1, the other end with
The hanging bridge structure is connected.Four support beams then altogether there are four fixing ends to be connected with substrate 1, as shown in Figure 2.
In addition, it is necessary to explanation, infrared detector of the invention is non-refrigeration infrared detector, in the infrared spy of uncooled IRFPA
Survey in the hanging bridge structure of device pixel and make two groups of temperature responsive unit B1 and B2 (the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13), use
To perceive infrared signal；Other two groups of temperature responsive units S1 and S2 (the first temperature responsive unit 14 and the second temperature responsive unit 15) are produced on lining
On bottom 1, the making on temperature responsive unit S1 and S2 has metallic reflector 6, i.e. temperature responsive unit S1 and S2 does not receive infra-red radiation.It is described
Temperature responsive unit B1, B2, S1 and S2 are made using identical material and technique, and its structural parameters is identical；Temperature responsive unit B1, B2, S1
With one or more temperature-sensitive elements are included in S2, the temperature-sensitive element can be non-crystalline silicon thermistor, vanadium oxide thermistor
Or one kind in diode.
The Wheatstone bridge formed is as shown in figure 1, temperature responsive unit B1 and S1 connect, and B2 and S2 connect, by two groups of strings
The temperature responsive unit of connection, which is together in parallel, forms a Wheatstone bridge, and four groups of temperature responsive units are spatially according to counterclockwise successively
It is B1, S1, B2 and S2.The Wheatstone bridge connected in this manner, when without infra-red radiation, differential output signal is
Zero；In variation of ambient temperature, due to B1, B2, S1 and S2 by variation of ambient temperature effect identical, differential output signal
It is still zero.When having infra-red radiation, now temperature responsive unit B1, B2 receives infra-red radiation, and temperature responsive unit S1 and S2 do not receive it is red
External radiation, differential output signal are no longer zero.By the output signal obtained is differential signal, it is suppressed that circuit noise, can
Significantly increase the signal to noise ratio of device.
A kind of preparation method of infrared detector array is also provided in the present embodiment, for making above-mentioned infrared detector battle array
Row, below in conjunction with the accompanying drawings 2 and Fig. 4 a~4g (along the AA ' sections in Fig. 2) specifically introduce the preparation method.
Step 1) is first carried out, there is provided a substrate 1, somatomedin layer 3 and function material are sequentially depositing on the surface of substrate 1
The bed of material 2, as shown in fig. 4 a.
In the present embodiment, the substrate 1 throws silicon chip using double.
It is double throwing silicon chips on metallization medium layer 3, the dielectric layer 3 be silica, silicon nitride or carborundum in one kind or
Combinations thereof；Function material layer 2 is made on the dielectric layer 3, the function material layer 2 can be amorphous silicon membrane, oxygen
Change one kind in vanadium film or monocrystalline silicon thin film.
Secondly step 2) is performed, the graphical function material layer 2, the first temperature-sensitive list is formed on the surface of dielectric layer 3
First 14, second temperature responsive unit 15, the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13, the first temperature responsive unit 14, second of formation
Temperature responsive unit 15, the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13 are as shown in Figure 4 b.
First temperature responsive unit 14, the second temperature responsive unit 15, the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13 are wrapped
Containing at least one temperature-sensitive element.
The temperature-sensitive element is non-crystalline silicon thermistor, vanadium oxide thermistor or diode.
Then step 3) is performed, deposited metal 4 is simultaneously graphical, with first temperature responsive unit 14, the second temperature-sensitive list
First 15 surfaces form the first metal layer 41, form the second metal in the 3rd temperature responsive unit 12 and the surface of the 4th temperature responsive unit 13
Layer 42, the surface of dielectric layer 3 formed the 3rd metal level 43, first temperature responsive unit 14, the second temperature responsive unit the 15, the 3rd
Wheatstone bridge is formed by the 3rd metal level 43 connection between the temperature responsive unit 13 of temperature responsive unit 12 and the 4th, such as Fig. 4 c institutes
Show.
In the present embodiment, the first metal layer 41 is used for the first temperature responsive unit 14, the inside temperature-sensitive of the second temperature responsive unit 15
Electrical connection between resistance or diode, the second metal layer 42 are used in the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13
Electrical connection between portion's thermistor or diode, the 3rd metal level 43 are used for the heat of the first temperature responsive unit 14, second
Wheatstone bridge is electrically connected to form between quick unit 15, the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13.
The pad (Pad) for welding metal lead is also formed after the metallic layer graphic.
In the present embodiment, the 3rd metal level 43 on the same layer, belongs to individual layer electrical wiring.
Then perform step 4), deposit passivation layer 7 as illustrated in fig. 4 d and 4e, and with first temperature responsive unit 14, the
The surface of passivation layer 7 corresponding to two temperature responsive units 15 forms metallic reflector 6.
The passivation layer 7 is one kind or combinations thereof in silica, silicon nitride or carborundum.
The metallic reflector 6 is aluminium or gold or other metals.
In the present embodiment, the passivation layer is 7 silica, and the metallic reflector 6 is aluminium.
Step 5) is performed again, as shown in fig. 4f, the passivation layer 7, dielectric layer 3 and substrate 1 is etched, with the substrate 1
Form first medium layer 31 between first temperature responsive unit 14, the second temperature responsive unit 15, the metal level 43 of substrate 1 and the 3rd it
Between formed the 3rd dielectric layer 33, form second medium between the temperature responsive unit 12 of substrate 1 and the 3rd and the 4th temperature responsive unit 13
Layer 32, forms the first passivation layer 71, the surface shape of the 3rd metal level 43 between the first metal layer 41 and metallic reflector 6
Into the 3rd passivation layer 73, the surface of second metal layer 42 forms the second passivation layer 7, and etching tank 8 is formed in the substrate 1；Institute
State second dielectric layer 32, the 3rd temperature responsive unit 12, the 4th temperature responsive unit 13, the passivation layer 72 of second metal layer 42 and second and form and hang
Bridge structure, the 3rd dielectric layer 33, the 3rd metal level 43 and the 3rd passivation layer 73 form support beam.
In this step further etching silicon substrate 1 formed with the etching tank 8 beneficial to corrosion release, the depth of etching tank 8 by
Designer voluntarily determines according to dot structure, as shown in fig. 4f.
Step 6) is finally performed, as shown in figure 4g, continues to corrode the substrate 1, the etching tank 8 is corroded to form one
Cavity 9, make the hanging bridge structure and support beam hanging.The pixel of formation, which carries out tiling, can form infrared detector array.
The anisotropic etchant corrosion silicon such as potassium hydroxide (KOH) or TMAH (TMAH) corrosion can be used
Substrate 1 discharges dot structure.
In the making of above-mentioned technique, before pixel is discharged, first using deep reaction ion etching technique or other etching skills
Art etches 8 grooves of corrosion in a silicon substrate, then each using potassium hydroxide (KOH) or TMAH (TMAH) corrosion etc.
Anisotropy corrosive agent corrosion silicon substrate 1 discharges dot structure, improves corrosion release efficiency, and corrosion shape and depth are controllable,
On the one hand the suspension structure of pixel can be made away from silicon substrate 1, in order to avoid sticked together between pixel and substrate, on the other hand, can
Not corrode most silicon as the anchor of pixel, to simplify the manufacture craft of anchor.
In the present embodiment, for the double throwing silicon chip crystal orientation used for (100), it is trapezoidal to corrode the cavity shape section；At it
Double throwing silicon chips of the crystal orientation for (111) can also be used in his embodiment.
Embodiment two
A kind of infrared detector array of offer of the present embodiment, as accompanying drawing 3a and accompanying drawing 5h (cut open along the CC ' in Fig. 3 a
Face) shown in, in the Infrared Detection Array of the present embodiment the difference of pixel and pixel in embodiment one be, the in the present embodiment
Three metal levels 43 are two layers of cable architecture that is electrically connected, and each layer includes two electrical wirings, passes through the 3rd passivation layer between interlayer electrical wiring
73 isolation.By up and down totally four articles of electrical wirings by the first temperature responsive unit 14, the second temperature responsive unit 15, the 3rd temperature responsive unit 12 and
Four temperature responsive units 13 connect into Wheatstone bridge.
It should be noted that accompanying drawing 3a is top view, uppermost two article of the 3rd metal level (electricity in support beam can only be seen
Line, marked as 4) in Fig. 3 a, it is also necessary to explanation, the 3rd metal level in support beam is show only in Fig. 3 a,
Part electrical wiring for connecting between temperature responsive unit is not shown, but those skilled in the art should could be aware that favour from Fig. 1
Annexation in stone electric bridge between temperature responsive unit.
Further, the section as shown in Figure 3 b for BB ' direction of the temperature responsive unit along Fig. 3 a in hanging bridge structure shows
It is intended to.The graphical rear single temperature-sensitive element 11 (thermistor or diode) of formation of function material layer 2 on dielectric layer 3, one
Or multiple temperature-sensitive elements 11 (3 are only depicted in figure) constitute a temperature responsive unit, temperature-sensitive element 11 passes through ohmic contact regions 5
It is connected with metal level 4, passivation layer 7 is coated on topmost.The ohmic contact regions can pass through function material layer described in heavy doping
To be formed.It is it should be noted that identical with Fig. 3 b of the present embodiment along the sectional view of temperature responsive unit in the hanging bridge structure of embodiment one.
As shown by Figures 1 and 3a, the connected mode of four groups of temperature responsive unit B1, B2, S1, S2 formation Wheatstone bridges is：Hanging bridge
Upper temperature responsive unit B1 a ends are connected with the g ends of temperature responsive unit S2 on substrate, its b end and the e ends phase of temperature responsive unit S1 on substrate
Connection；Temperature responsive unit B2 c ends are connected with the h ends of temperature responsive unit S2 on substrate on hanging bridge, its d end and temperature responsive unit on substrate
S1 f ends are connected；Powered by constant-current source or constant pressure source, afterwards the output voltage signal V between b (e) and c (h)0。
A kind of preparation method of infrared detector array is also provided in the present embodiment, for making the infrared spy of the present embodiment
Device array is surveyed, 3a and Fig. 5 a~5h (along the AA ' sections in Fig. 2) specifically introduce the preparation method below in conjunction with the accompanying drawings.
Artwork 5a~5b is identical with embodiment one in the present embodiment, and preparation method and embodiment one in the present embodiment
The difference of preparation method is：The 3rd metal level 43 formed in the step 3) (is schemed for the electrical wiring of part Wheatstone bridge
5c), in this case, the step 4) includes：Deposit passivation layer 7 (Fig. 5 d), and with first temperature responsive unit 14, second
The surface of passivation layer 7 corresponding to temperature responsive unit 15 forms metallic reflector 6, while in passivation layer corresponding to the 3rd metal level 45
7 surfaces re-form one layer of the 3rd metal level 10 and reinstated as electrical wiring (as depicted in fig. 5e), this two layers of the 3rd metal level 10,43 1
Favour is formed to connect first temperature responsive unit 14, the second temperature responsive unit 15, the 3rd temperature responsive unit 12 and the 4th temperature responsive unit 13
Stone electric bridge.
Preferably, in the redeposited one layer of passivation layer 16 (as shown in figure 5f) in above-mentioned total surface, passivation layer 16 is oxygen
One kind or combinations thereof in SiClx, silicon nitride or carborundum.
Etch Passivation 16,7 and dielectric layer 3 form dot structure afterwards, further etch silicon substrate 1 formed with beneficial to corruption
The etching tank 8 of release is lost, the depth of etching tank 8 is voluntarily determined by designer according to dot structure, as shown in fig. 5g；
Finally using the anisotropic etchant corrosion silicon such as potassium hydroxide (KOH) or TMAH (TMAH) corrosion
Dot structure is discharged, cavity 9 is formed in substrate 1, as shown in figure 5h.
Embodiment three
The present embodiment and the difference of embodiment one, two are that the present embodiment uses SOI as substrate.
The temperature responsive unit formed for thermistor, then first erode the top layer silicon in SOI, Zhi Hou in the step 1)
Direct growth function material layer on SOI oxygen buried layer, thermosensitive resistance type is formed after the graphical function material layer in step 2)
The first temperature responsive unit, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th temperature responsive unit, subsequent step and embodiment one, two
In it is identical.
The temperature responsive unit formed for diode, then step 1) select suitable soi wafer, directly utilized in step 2)
SOI top layer silicon as function material layer, formed after the graphical function material layer diode-type the first temperature responsive unit, the
Two temperature responsive units, the 3rd temperature responsive unit and the 4th temperature responsive unit, subsequent step are identical with embodiment one, two.
In summary, the present invention provides a kind of infrared detector array and preparation method thereof, the infrared detector array
Including several pixels, the pixel includes：Substrate, the substrate surface are also formed formed with a cavity, the substrate surface
There are first medium layer, the first temperature responsive unit and the second temperature responsive unit, the first metal layer, the first passivation layer and metallic reflector；
Hanging bridge structure, vacantly it is connected above the cavity and by support beam with the substrate, the hanging bridge structure includes second and is situated between
Matter layer, the 3rd temperature responsive unit and the 4th temperature responsive unit, second metal layer and the second passivation layer；The support beam includes the 3rd
Dielectric layer, the 3rd metal level and the 3rd passivation layer；First temperature responsive unit, the second temperature responsive unit, the 3rd temperature responsive unit and
Connect to form Wheatstone bridge by the 3rd metal level between 4th temperature responsive unit.The present invention passes through wheatstone bridge form
Four groups of temperature responsive units are connected, difference output electric signal, it is suppressed that circuit noise, the noise of device can be significantly increased
Than.The characteristics of preparation method of the present invention, is：When discharging dot structure, deep trouth is first etched in a silicon substrate, is then used
Anisotropic etchant corrosion silicon release dot structure, improves corrosion release efficiency, and corrosion shape and depth are controllable, can keep away
Exempt to stick together between pixel and substrate, the manufacture craft of anchor not corrode most silicon as the anchor of pixel, can also be simplified.
So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (4)
1. a kind of preparation method of infrared detector array, it is characterised in that methods described includes：
1) substrate is provided, somatomedin layer and function material layer are sequentially depositing in the substrate surface；
2) the graphical function material layer, the first temperature responsive unit, the second temperature responsive unit, the 3rd are formed in the dielectric layer surface
Temperature responsive unit and the 4th temperature responsive unit；
3) deposited metal and graphical, with formed on first temperature responsive unit, the second temperature responsive unit surface the first metal layer,
Second metal layer is formed in the 3rd temperature responsive unit and the 4th temperature responsive unit surface, in the dielectric layer surface the 3rd gold medal of formation
Belong to layer, pass through the described 3rd between first temperature responsive unit, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th temperature responsive unit
Metal level connects to form Wheatstone bridge；
4) deposit passivation layer, and form metal in passivation layer surface corresponding with first temperature responsive unit, the second temperature responsive unit
Reflecting layer；
5) passivation layer, dielectric layer and the substrate are etched, between the substrate and the first temperature responsive unit, the second temperature responsive unit
First medium layer is formed, the 3rd dielectric layer, the substrate and the 3rd temperature responsive unit are formed between the substrate and the 3rd metal level
And the 4th form second dielectric layer between temperature responsive unit, the first passivation is formed between the first metal layer and metallic reflector
Layer, the 3rd layer on surface of metal form the 3rd passivation layer, and the second metal layer surface forms the second passivation layer, the substrate
Middle formation etching tank；The second dielectric layer, the 3rd temperature responsive unit, the 4th temperature responsive unit, second metal layer and the second passivation layer
Hanging bridge structure is formed, the 3rd dielectric layer, the 3rd metal level and the 3rd passivation layer form support beam；
6) continue to corrode the substrate, the corrosion groove corrosion is formed into a cavity, hangs the hanging bridge structure and support beam
It is empty.
2. according to the method for claim 1, it is characterised in that：The 3rd metal level formed in the step 3) is part favour
The electrical wiring of stone electric bridge, in this case, the step 4) include：Deposit passivation layer, and with first temperature responsive unit,
Passivation layer surface corresponding to second temperature responsive unit forms metallic reflector, while in passivation layer table corresponding to the 3rd metal level
Face re-forms one layer of the 3rd metal level as electrical wiring, and this two layers of the 3rd metal level is used for connecting the first temperature-sensitive list together
Member, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th temperature responsive unit form Wheatstone bridge.
3. method according to claim 1 or 2, it is characterised in that：The substrate is SOI substrate, then in the step 1)
The top layer silicon in SOI is first eroded, afterwards the direct growth function material layer on SOI oxygen buried layer；Graphical institute in step 2)
State the first temperature responsive unit that thermosensitive resistance type is formed after function material layer, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th heat
Quick unit.
4. method according to claim 1 or 2, it is characterised in that：Substrate in the step 1) is SOI substrate, then walks
It is rapid 2) in directly by the use of SOI top layer silicon as function material layer, form diode-type after the graphical function material layer
First temperature responsive unit, the second temperature responsive unit, the 3rd temperature responsive unit and the 4th temperature responsive unit.
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| CN103852161A (en) * | 2012-12-03 | 2014-06-11 | 美国亚德诺半导体公司 | Photonic sensor and method of manufacturing the same |
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