CN106629575B - Heater-type microsensor and its manufacture method - Google Patents
Heater-type microsensor and its manufacture method Download PDFInfo
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- CN106629575B CN106629575B CN201610898632.3A CN201610898632A CN106629575B CN 106629575 B CN106629575 B CN 106629575B CN 201610898632 A CN201610898632 A CN 201610898632A CN 106629575 B CN106629575 B CN 106629575B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
Abstract
The present invention provides a kind of heater-type microsensor and its manufacture method, including：Substrate, the interior formation of substrate are fluted；Pad, positioned at the substrate surface of groove periphery；Heater-type microsensor body, positioned at the top of groove, including：Body supports layer, gauche form heating element heater, the first insulating barrier and sensitive electrode, gauche form heating element heater and sensitive electrode are located at body supports layer surface, and gauche form heating element heater is located at the outside of sensitive electrode, and the first insulating barrier is located at gauche form heater element surface；Support beam, between substrate and heater-type microsensor body, suitable for heater-type microsensor body is clamped on substrate；Hydrophobic oleophobic layer, positioned at the first surface of insulating layer, exposed body supports layer surface, exposed substrate surface and support beam surface.The present invention uses heater-type structure, reduces sensitive material region insulating barrier electric leakage interference for caused by sensitive test signal, realizes that easy self-alignment type liquid sensitive material is uploaded in sensitive electrode region.
Description
Technical field
The invention belongs to minute mechanical and electrical system field, and in particular to a kind of heater-type microsensor and its manufacture method.
Background technology
Based on the heated type microsensor that MEMS (MEMS) technologies and sensitive material are constructed technology and manufactured due to
Possess the advantages that superior gas sensitization, low in energy consumption, cost is cheap have been obtained for extensively and in-depth study, its application
The multiple fields of human being's production life are entered, promote the development of industry.Existing market be using it is most be still earthenware
Formula gas sensor, this kind of product volume is big, power consumption is high, sensitive material upload technology be difficult to automation thus yield rate it is relatively low,
Its manufacturing cost is high, limits the popularization and application of sensors with auxiliary electrode.With the continuous development and progress of micro ＆ nano technology, last decade
Come, semiconductor transducer based on MEMS continuously emerges, this kind of sensor it is most using metal oxide materials, porous material,
Metal framework organic matter etc. is as sensitive material, by means such as coating, spin coating, inkjet printing, micromanipulation systems by sensitivity
The test electrode zone of sensor is loaded on material.However, due to coating, spin-coating method easy damaged micro-structural, it is difficult to hanging
Sensor surface realizes upper carrier material in designated area.Additionally due to surface hydrophilic, disperses sensitive material in the solution upper
Generally spread during load in whole chip surface, cause also to have sensitive material on non-sensitive electrode zone and other metal surfaces
Material is uploaded.Waste of material is so on the one hand caused, on the other hand conductive or semiconductor-style materials cause electric pole short circuit, have a strong impact on
Working sensor.The technologies such as the inkjet technology that occurs in recent years, micromanipulation can be carried out on material in tiny area
Carry, still, these methods still have liquid material device surface diffusion, upload it is with high costs, less efficient, be difficult to batch
The defects of changing manufacture.In addition, it is low to heat the manufacturing process temperature of the insulating barrier between electrode and sensitive electrode, causes insulating barrier
Compactness is poor, pin hole be present, thus partially electronically conductive sensitive material upload after can cause sensitive material and heat interelectrode electric leakage,
Influence sensor performance.
The research of micro- heated type sensor is numerous both at home and abroad at present, is mostly outstanding film, hangs island structure, but sensitive material
Upload it is a large amount of dependent on artificial coating, dip-coating method, inkjet printing and micromanipulation system etc. mode.It is wherein artificial
Coating is mostly the sensor of ceramic pipe type, and device volume is big, poor to manually-operated technical requirements height, homogeneity, and
The training masterful technique work that requires a great deal of time is coated.For dip-coating method, chip is immersed in sensitive material
In solution, whole surface can all deposit sensitive material, on the one hand can cause the waste of sensitive material, but the research and development of new material are led to
The amount being commonly formed is less, it is difficult to meet demand.On the other hand different electricity can be caused between the electrodes by possessing conductive material covering
The electric leakage of interpolar, bring no small test error.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of heater-type microsensor and its
Manufacture method, pattern mask metal level is formed by sensor surface, hydrophobic oleophobic layer is constructed after structure release is completed, profit
The patterning of hydrophobic oleophobic layer is realized with stripping technology.It is special using the difference of sensor surface different zones in upload operation
Property realizes that self-alignment type of the liquid sensitive material in sensitive electrode region is uploaded, the difficulty for solving carrier material.It is in addition, other
Hot type structure also solves the shortcomings that traditional directly-heated type structure electric leakage.
In order to achieve the above objects and other related objects, the present invention provides a kind of heater-type microsensor, the heater-type
Microsensor includes：
Substrate, the interior formation of the substrate are fluted；
Pad, positioned at the substrate surface of the groove periphery；
Heater-type microsensor body, positioned at the top of the groove, and with the bottom of the groove mutually across a certain distance；
The heater-type microsensor body includes：Body supports layer, gauche form heating element heater, the first insulating barrier and sensitive electrode, it is described
Gauche form heating element heater and the sensitive electrode are located at the body supports layer surface, and the gauche form heating element heater is positioned at described quick
The outside of sense electrode, first insulating barrier are located at the gauche form heater element surface；
Support beam, between the substrate and the heater-type microsensor body, suitable for the indirect heat is declined biography
Sensor main body is clamped on the substrate；
Hydrophobic oleophobic layer, positioned at first surface of insulating layer, the exposed body supports layer surface, it is exposed described in
Substrate surface and the support beam surface.
As a kind of preferred scheme of the heater-type microsensor of the present invention, the substrate includes substrate body and insulation branch
Layer is supportted, the insulation support layer is located at the substrate body surface of the groove periphery, and the pad is positioned at the insulation branch
Support layer surface.
As the present invention heater-type microsensor a kind of preferred scheme, the body supports layer, the support beam and
The insulation support layer is integrated.
As a kind of preferred scheme of the heater-type microsensor of the present invention, the gauche form heating element heater is METAL HEATING PROCESS member
Part.
As a kind of preferred scheme of the heater-type microsensor of the present invention, the gauche form heating element heater includes：
Doped polysilicon layer, positioned at the body supports layer surface；
Second insulating barrier, the DOPOS doped polycrystalline silicon layer surface is covered in, second insulating barrier is interior formed with opening, described
Opening exposes the doped polysilicon layer；
Metal level is drawn, is filled in the opening and is covered in second surface of insulating layer.
As a kind of preferred scheme of the heater-type microsensor of the present invention, the material of the hydrophobic oleophobic layer is fluorine-containing material
Material, chlorosilane or siloxanes.
The present invention also provides a kind of heater-type microsensor, and the heater-type microsensor includes：
Substrate, the interior formation of the substrate are fluted；
Pad, positioned at the substrate surface of the groove periphery；
Heater-type microsensor body, positioned at the top of the groove, and with the bottom of the groove mutually across a certain distance；
The heater-type microsensor body includes：Body supports layer, gauche form heating element heater, the first insulating barrier and sensitive electrode, it is described
Gauche form heating element heater and the sensitive electrode are located at the body supports layer surface, and the gauche form heating element heater is positioned at described quick
The outside of sense electrode, first insulating barrier are located at the gauche form heater element surface；
Support beam, between the substrate and the heater-type microsensor body, suitable for the indirect heat is declined biography
Sensor main body is clamped on the substrate；
Sensitive material, the sensitive material are located at the sensitive electrode surfaces.
As a kind of preferred scheme of the heater-type microsensor of the present invention, the substrate includes substrate body and insulation branch
Layer is supportted, the insulation support layer is located at the substrate body surface of the groove periphery, and the pad is positioned at the insulation branch
Support layer surface.
As the present invention heater-type microsensor a kind of preferred scheme, the body supports layer, the support beam and
The insulation support layer is integrated.
As a kind of preferred scheme of the heater-type microsensor of the present invention, the gauche form heating element heater is METAL HEATING PROCESS member
Part.
As a kind of preferred scheme of the heater-type microsensor of the present invention, the gauche form heating element heater includes：
Doped polysilicon layer, positioned at the body supports layer surface；
Second insulating barrier, the DOPOS doped polycrystalline silicon layer surface is covered in, second insulating barrier is interior formed with opening, described
Opening exposes the doped polysilicon layer；
Metal level is drawn, is filled in the opening and is covered in second surface of insulating layer.
The present invention also provides a kind of manufacture method of heater-type microsensor, and the manufacture method comprises the following steps：
1) substrate is provided；
2) gauche form heating element heater, sensitive electrode and pad, the gauche form heating element heater is made in the substrate surface to be located at
On the outside of the sensitive electrode, the pad is located on the outside of the gauche form heating element heater, is separated by necessarily with the gauche form heating element heater
Spacing, and the pad is connected with the sensitive electrode and the heating element heater respectively；
3) coat of metal is formed in the sensitive electrode and the bond pad surface；
4) substrate is etched to discharge heater-type microsensor body, and the heater-type microsensor body includes described
Gauche form heating element heater, the sensitive electrode and the substrate below the gauche form heating element heater, the sensitive electrode；
5) body structure surface obtained in step 4) forms hydrophobic oleophobic layer；
6) hydrophobic oleophobic layer and the coat of metal positioned at the metal coating layer surface are removed.
As a kind of preferred scheme of the manufacture method of the heater-type microsensor of the present invention, step 1) includes following step
Suddenly：
Substrate body 1-1) is provided；
1-2) insulation support layer is formed on the substrate body surface.
As a kind of preferred scheme of the manufacture method of the heater-type microsensor of the present invention, step 2) includes following step
Suddenly：
2-1) low stress polysilicon layer is formed in the substrate surface；
Ion implanting, diffusion 2-2) are carried out to the low stress polysilicon layer, to form doped polysilicon layer；
The doped polysilicon layer 2-3) is etched to define the shape of the gauche form heating element heater；
2-4) the second insulating barrier, and the shape in second insulating barrier are formed in the DOPOS doped polycrystalline silicon layer surface of reservation
Into opening, the opening exposes the doped polysilicon layer；
2-5) in step 2-4) obtained body structure surface forms metal level, the metal level is etched to form extraction metal
Layer, the sensitive electrode and the pad, the extraction metal level fill up the opening and are covered in the second insulating barrier table
Face.
As a kind of preferred scheme of the manufacture method of the heater-type microsensor of the present invention, step 2) includes following step
Suddenly：
2-1) metal level is formed in the substrate surface；
2-2) etch the metal level and draw metal level, the sensitive electrode and the pad to be formed.
As a kind of preferred scheme of the manufacture method of the heater-type microsensor of the present invention, step 2) and step 3) it
Between be additionally included in the step of gauche form heater element surface forms the first insulating barrier.
As the present invention heater-type microsensor manufacture method a kind of preferred scheme, between step 3) and step 4)
It is additionally included in the step of gauche form heater element surface forms the first insulating barrier.
As a kind of preferred scheme of the manufacture method of the heater-type microsensor of the present invention, also include such as after step 6)
Lower step：
7) liquid sensitive material is prepared；
8) sensitive electrode surfaces will be loaded in the fluid-sensitive material autoregistration；
9) the hydrophobic oleophobic layer is removed.
As a kind of preferred scheme of the manufacture method of the heater-type microsensor of the present invention, step 8) includes following step
Suddenly：
The fluid-sensitive droplets of material 8-1) is applied to the heater-type microsensor body surface, the fluid-sensitive material
Material self-alignment type remaines in the sensitive electrode surfaces；
The fluid-sensitive material 8-2) is subjected to low temperature drying.
As a kind of preferred scheme of the manufacture method of the heater-type microsensor of the present invention, in step 8-2) in, it is described
The temperature of low temperature drying is 50 DEG C~120 DEG C, and the time of low temperature drying is 30 minutes~120 minutes.
As a kind of preferred scheme of the manufacture method of the heater-type microsensor of the present invention, in step 8-2) after, also
The step of including the fluid-sensitive material is carried out into hot setting.
As a kind of preferred scheme of the manufacture method of the heater-type microsensor of the present invention, the temperature of the hot setting
For 150 DEG C~400 DEG C, the time of hot setting is 30 minutes~300 minutes.
As a kind of preferred scheme of the manufacture method of the heater-type microsensor of the present invention, in step 9), using oxygen
Plasma etching method, UV ozone ablution, heating or wet etching remove the hydrophobic oleophobic layer.
As described above, the heater-type microsensor and its manufacture method of the present invention, have the advantages that：The present invention's
Heater-type microsensor uses heater-type structure, reduces the insulating barrier electric leakage of sensitive material region for sensitive test signal
Caused by interference；The hydrophobic oleophobic layer of patterning is formd in the sensitive electrode region on hanging sensor construction surface, so as to
Realization realizes that easy self-alignment type liquid sensitive material is uploaded in sensitive electrode region.The heater-type microsensor of the present invention
Sensitive material, which is uploaded, to be carried out in hanging micro-structure surface, do not damage micro-structural, processing compatibility is strong, and coat of metal is gone
Except easy.Upload process sample requirements are small, and non-sensitive area's material simple to operate is easily removed.The heater-type micro sensing of the present invention
Utensil has that processing compatibility is good, practical, manufacturing process is simple, cost is low, is adapted in movable or free standing structure surface material
Material such as uploads at the advantage.Compared to prior art, technical solution of the present invention solves prior art and is difficult in hanging or movable structure
The difficulty of tiny area progress medium carrying is specified on surface, while heater-type structure avoids common directly-heated type structure due to insulation
Leaked electricity caused by layer defects.
Brief description of the drawings
Fig. 1 is shown as the overlooking structure figure of the heater-type microsensor provided in the embodiment of the present invention one.
Fig. 2 is shown as cross section structure schematic diagrams of the Fig. 1 along AA ' directions.
Fig. 3 is shown as the overlooking the structure diagram of the heater-type microsensor provided in the embodiment of the present invention two.
Fig. 4 is shown as cross section structure schematic diagrams of the Fig. 3 along AA ' directions.
Fig. 5 is shown as the step flow signal of the manufacture method of the heater-type microsensor provided in the embodiment of the present invention three
Figure.
Fig. 6 to Figure 14 is shown as each step pair of manufacture method of the heater-type microsensor provided in the embodiment of the present invention three
The cross section structure schematic diagram answered.
Component label instructions
10 substrates
101 grooves
102 substrate bodies
103 insulation support layers
11 pads
12 heater-type microsensor bodies
121 body supports layers
122 gauche form heating element heaters
1221 doped polysilicon layers
1222 second insulating barriers
1223 draw metal level
123 first insulating barriers
124 sensitive electrodes
13 support beams
14 hydrophobic oleophobic layers
15 sensitive materials
16 coat of metals
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to Fig. 1~Figure 14.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only showing the component relevant with the present invention in diagram rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Fig. 1 and Fig. 2 is referred to, the present invention provides a kind of heater-type microsensor, and the heater-type microsensor includes：Lining
Bottom 10, the substrate 10 is interior to form fluted 101；Pad 11, the substrate of the pad 11 positioned at the periphery of groove 101
10 surfaces；Heater-type microsensor body 12, the heater-type microsensor body 12 are located at the top of the groove 101, and
With the bottom of the groove 101 mutually across a certain distance；The heater-type microsensor body 12 includes：Body supports layer 121, side
Formula heating element heater 122, the first insulating barrier 123 and sensitive electrode 124, the gauche form heating element heater 122 and the sensitive electrode 124
Positioned at the surface of body supports layer 121, and the gauche form heating element heater 122 is located at the outside of the sensitive electrode 124, preferably
Ground, the gauche form heating element heater 122 are located at the periphery of the sensitive electrode 124, i.e., described gauche form heating element heater 122 is positioned at described
The side of sensitive electrode 124, first insulating barrier 123 are located at the surface of gauche form heating element heater 124；Support beam 13, it is described
Support beam 13 is between the substrate 10 and the heater-type microsensor body 12, suitable for by the heater-type microsensor
Main body 12 is clamped on the substrate 10；Sensitive material 15, the sensitive material 15 are located at the table of sensitive electrode 124
Face.
As an example, the substrate 10 includes substrate body 102 and insulation support layer 103, the insulation support layer 103
In the surface of the substrate body 102 of the periphery of groove 101, the pad 11 is located at the surface of insulation support layer 103.
As an example, the substrate body 102 can be but be not limited only to monocrystalline silicon piece, it is preferable that the substrate body
102 be the monocrystalline silicon piece of (100) crystal orientation.
As an example, the insulation support layer 103 can be silicon nitride, or silica, can also be silicon nitride
With the combination of silica.The thickness of the insulation support layer 103 can be but be not limited only to 500nm~1300nm.
As an example, 103 integrated knot of the body supports layer 121, the support beam 13 and the insulation support layer
Structure, i.e., described body supports layer 121, the support beam 13 and the insulation support layer 103 are to be located at the substrate by etching
The structure that the same material layer on the surface of main body 102 is formed.
In one example, the gauche form heating element heater 122 can be metallic heating element, the material of the metallic heating element
Material can be Pt, Au, Ti, Cr, TiW one or more therein, and the thickness of the gauche form heating element heater 122 can be but not only
It is limited to 250nm~1000nm.
In another example, the gauche form heating element heater 122 is polycrystalline silicon heating component, including：Doped polysilicon layer
1221, the doped polysilicon layer 1221 is located at the surface of body supports layer 121；Second insulating barrier 1222, described second is exhausted
Edge layer 1222 is covered in the surface of doped polysilicon layer 1221, and second insulating barrier 1222 is interior formed with opening, described to open
Mouth exposes the doped polysilicon layer 1221；Metal level 1223 is drawn, the extraction electrode 1223 is filled in the opening
And it is covered in the surface of the second insulating barrier 1222.
As an example, the thickness of the doped polysilicon layer 1221 can be but be not limited only to 300nm~1000nm, it is described
The film rectangular resistance of doped polysilicon layer 1221 is the ohms/square of 40 ohms/squares~100；Second insulating barrier 1222
Material can be silicon nitride, or silica, can also be the combination of silicon nitride and silica, second insulating barrier
1222 thickness can be but be not limited only to 100nm~600nm；It is described draw metal level 1223 material think Pt, Au, Ti,
Cr, TiW one or more therein.
As an example, the material of the first insulating barrier 123 can be silicon nitride, or silica, can also be nitridation
The combination of silicon and silica, the thickness of first insulating barrier 123 can be but be not limited only to 100nm~600nm.
As an example, the material of the sensitive electrode 124 can be but be not limited only to Pt or Au, the sensitive electrode 124
The surface of body supports layer 121 is fixed on by adhesion layer；The material of the adhesion layer can be one kind in Ti, TiW, Cr
Or it is a variety of, the thickness of the sensitive electrode 124 can be but be not limited only to 250nm~500nm.
As an example, the sensitive electrode 124 can be but not only limit interdigited electrode.
As an example, the material of the hydrophobic oleophobic layer 14 is fluorine material, chlorosilane or siloxanes, specifically, described
The material of hydrophobic oleophobic layer 14 can be silicon fluoride, chlorosilane, siloxanes etc., the thickness of the hydrophobic oleophobic layer 14 can be but
It is not limited only to 1nm~20nm.
Embodiment two
Fig. 3 and Fig. 4 is referred to, the present embodiment also provides a kind of heater-type microsensor, the heater-type microsensor bag
Include：Substrate 10, the substrate 10 is interior to form fluted 101；Pad 11, institute of the pad 11 positioned at the periphery of groove 101
State the surface of substrate 10；Heater-type microsensor body 12, the heater-type microsensor body 12 are located at the upper of the groove 101
Side, and with the bottom of the groove 101 mutually across a certain distance；The heater-type microsensor body 12 includes：Body supports layer
121st, gauche form heating element heater 122, the first insulating barrier 123 and sensitive electrode 124, the gauche form heating element heater 122 and the sensitivity
Electrode 124 is located at the surface of body supports layer 121, and the gauche form heating element heater 122 is located at the outer of the sensitive electrode 124
Side, it is preferable that the gauche form heating element heater 122 is located at the periphery of the sensitive electrode 124, i.e., described gauche form heating element heater 122
Positioned at the side of the sensitive electrode 124, first insulating barrier 123 is located at the surface of gauche form heating element heater 124；Support beam
13, the support beam 13 is between the substrate 10 and the heater-type microsensor body 12, suitable for by the heater-type
Microsensor body 12 is clamped on the substrate 10；Hydrophobic oleophobic layer 14, the hydrophobic oleophobic layer 14 are exhausted positioned at described first
The surface of edge layer 123, the exposed surface of body supports layer 121, the exposed surface of the substrate 10 and the table of the support beam 13
Face, in one example, the hydrophobic oleophobic layer 14 are patterned hydrophobic oleophobic layer.The heater-type microsensor of the present invention
Using heater-type structure, reduce sensitive material region insulating barrier electric leakage interference for caused by sensitive test signal；
The region of the sensitive electrode 124 on hanging sensor construction surface forms the hydrophobic oleophobic layer 14 of patterning, from
And realize and realize that easy self-alignment type liquid sensitive material is uploaded on the sensitive electrode 124.
As an example, the substrate 10 includes substrate body 102 and insulation support layer 103, the insulation support layer 103
In the surface of the substrate body 102 of the periphery of groove 101, the pad 11 is located at the surface of insulation support layer 103.
As an example, the substrate body 102 can be but be not limited only to monocrystalline silicon piece, it is preferable that the substrate body
102 be the monocrystalline silicon piece of (100) crystal orientation.
As an example, the insulation support layer 103 can be silicon nitride, or silica, can also be silicon nitride
With the combination of silica.The thickness of the insulation support layer 103 can be but be not limited only to 500nm~1300nm.
As an example, 103 integrated knot of the body supports layer 121, the support beam 13 and the insulation support layer
Structure, i.e., described body supports layer 121, the support beam 13 and the insulation support layer 103 are to be located at the substrate by etching
The structure that the same material layer on the surface of main body 102 is formed.
In one example, the gauche form heating element heater 122 can be metallic heating element, the material of the metallic heating element
Material can be Pt, Au, Ti, Cr, TiW one or more therein, and the thickness of the gauche form heating element heater 122 can be but not only
It is limited to 250nm~1000nm.
In another example, the gauche form heating element heater 122 is polycrystalline silicon heating component, including：Doped polysilicon layer
1221, the doped polysilicon layer 1221 is located at the surface of body supports layer 121；Second insulating barrier 1222, described second is exhausted
Edge layer 1222 is covered in the surface of doped polysilicon layer 1221, and second insulating barrier 1222 is interior formed with opening, described to open
Mouth exposes the doped polysilicon layer 1221；Metal level 1223 is drawn, the extraction electrode 1223 is filled in the opening
And it is covered in the surface of the second insulating barrier 1222.
As an example, the thickness of the doped polysilicon layer 1221 can be but be not limited only to 300nm~1000nm, it is described
The film rectangular resistance of doped polysilicon layer 1221 is the ohms/square of 40 ohms/squares~100；Second insulating barrier 1222
Material can be silicon nitride, or silica, can also be the combination of silicon nitride and silica, second insulating barrier
1222 thickness can be but be not limited only to 100nm~600nm；It is described draw metal level 1223 material think Pt, Au, Ti,
Cr, TiW one or more therein.
As an example, the material of the first insulating barrier 123 can be silicon nitride, or silica, can also be nitridation
The combination of silicon and silica, the thickness of first insulating barrier 123 can be but be not limited only to 100nm~600nm.
As an example, the material of the sensitive electrode 124 can be but be not limited only to Pt or Au, the sensitive electrode 124
The surface of body supports layer 121 is fixed on by adhesion layer；The material of the adhesion layer can be one kind in Ti, TiW, Cr
Or it is a variety of, the thickness of the sensitive electrode 124 can be but be not limited only to 250nm~500nm.
As an example, the sensitive electrode 124 can be but not only limit interdigited electrode.
As an example, the material of described sensitive material 15 includes all kinds of sensitive materials；Preferably, the sensitive material
The material of layer 15 is metal oxide semiconductor material, and its material is ZnO, SnO2、TiO2、In2O3、WO3Or Cu；The sensitive material
The pattern of the bed of material 15 can be solid, hollow or loose structure, can also be one-dimensional, two-dimentional, three-dimensional or several dimension materials
Assembly；The size of the sensitive material 15 is between 1nm-2000nm.
Embodiment three
Referring to Fig. 5, the present embodiment provides a kind of manufacture method of heater-type microsensor, the heater-type microsensor
Manufacture method comprise the following steps：
1) substrate is provided；
2) gauche form heating element heater, sensitive electrode and pad, the gauche form heating element heater is made in the substrate surface to be located at
On the outside of the sensitive electrode, the pad is located on the outside of the gauche form heating element heater, is separated by necessarily with the gauche form heating element heater
Spacing, and the pad is connected with the sensitive electrode and the heating element heater respectively；
3) coat of metal is formed in the sensitive electrode and the bond pad surface；
4) substrate is etched to discharge heater-type microsensor body, and the heater-type microsensor body includes described
Gauche form heating element heater, the sensitive electrode and the substrate below the gauche form heating element heater, the sensitive electrode；
5) body structure surface obtained in step 4) forms hydrophobic oleophobic layer；
6) hydrophobic oleophobic layer and the coat of metal positioned at the metal coating layer surface are removed.
In step 1), S1 steps and Fig. 6 in Fig. 5 are referred to, there is provided substrate 10.
As an example, step 1) comprises the following steps：
Substrate body 102 1-1) is provided；The substrate body 102 can be but be not limited only to monocrystalline silicon piece, it is preferable that institute
State the monocrystalline silicon piece that substrate body 102 is (100) crystal orientation；
1-2) the surface of substrate body 102 formed insulation support layer 103, it is preferable that using physical vaporous deposition,
Chemical vapour deposition technique or thermal oxidation method form the insulation support layer 103 on the surface of substrate body 102.
As an example, the insulation support layer 103 can be silicon nitride, or silica, can also be silicon nitride
With the combination of silica.The thickness of the insulation support layer 103 can be but be not limited only to 500nm~1300nm.
In step 2), S2 steps and Fig. 7 to Figure 10 in Fig. 5 are referred to, making gauche form on the surface of substrate 10 adds
Thermal element 122, sensitive electrode 124 and pad 11, the gauche form heating element heater 122 are described positioned at the outside of sensitive electrode 124
Pad 11 is on the outside of the gauche form heating element heater 122, with the phase of gauche form heating element heater 122 across a certain distance, and the weldering
Disk 11 is connected with the sensitive electrode 124 and the heating element heater 122 respectively.
In one example, the gauche form heating element heater 122 is polycrystalline silicon heating component, and now, step 2) includes following step
Suddenly：
2-1) low stress polysilicon layer is formed on the surface of substrate 10；
Ion implanting, diffusion 2-2) are carried out to the low stress polysilicon layer, meets that the doping of Ohmic contact is more to be formed
Crystal silicon layer 1221；The thickness of the doped polysilicon layer 1221 can be but be not limited only to 300nm~1000nm, and the doping is more
The film rectangular resistance of crystal silicon layer 1221 is the ohms/square of 40 ohms/squares~100
The doped polysilicon layer 1221 2-3) is etched to define the shape of the gauche form heating element heater, as shown in Figure 7；
The second insulating barrier 1222 2-4) is formed on the surface of the doped polysilicon layer 1221 of reservation, as shown in figure 8, and leading to
Cross lithographic etch process and opening is formed in second insulating barrier 1222, the opening exposes the doped polysilicon layer
1221；
2-5) in step 2-4) obtained body structure surface forms metal level, gone by lithographic etch process (or lift-off technology)
Except the part metal level to be formed draws metal level 1223, the sensitive electrode 124 and the pad 11, the extraction metal
Layer 1223 fills up the opening and is covered in the surface of the second insulating barrier 1222, as shown in Figure 9.
In another example, the gauche form heating element heater 122 is metallic heating element, and now, step 2) includes following step
Suddenly：
2-1) in the forming metal layer on surface of substrate 10；
The part metal level 2-2) is removed by lithographic etch process (or lift-off technology) to form extraction metal level
1223rd, the sensitive electrode 124 and the pad 11.
As an example, the sensitive electrode 124 can be but be not limited only to interdigited electrode.
As an example, referring to Fig. 10, step 2-5) also include by physical vaporous deposition, chemical vapor deposition afterwards
The step of method or thermal oxidation method form the first insulating barrier 123 on the surface of gauche form heating element heater 122.
It should be noted that can also be the surface of gauche form heating element heater 122 forms the first insulating barrier 123 the step of
Execution of step 3) perform again afterwards.
In step 3), S3 steps and Figure 11 in Fig. 5 are referred to, in the sensitive electrode 124 and the table of the pad 11
Face forms coat of metal 16.
As an example, the material of the coat of metal 16 can be but be not limited only to Cr or Ti；The coat of metal
16 thickness can be but be not limited only to 30nm~300nm.
In step 4), S4 steps and Figure 12 in Fig. 5 are referred to, etches the substrate 10 to discharge heater-type micro sensing
Device main body 12, the heater-type microsensor body 12 include the gauche form heating element heater 121, the sensitive electrode 124 and position
The substrate 10 below the gauche form heating element heater 122, the sensitive electrode 124 is (i.e. in embodiment one and embodiment two
Described body supports layer 121).
As an example, dry etch process, wet-etching technology or dry etch process and wet etching work can be used
The method that skill is combined etches the substrate 10 to discharge microsensor body 12 described in heater-type.Preferably, it is (anti-using RIE
Answer plasma etching) insulation support layer 103 described in dry etching is up to the surface of the substrate body 102, then using matter
The TMAH (TMAH) that fraction is 25% is measured at 80 DEG C to corrode described in the heater-types below microsensor body 12
The substrate body 102 until microsensor body 12 described in the heater-type vacantly discharge.
It should be noted that in step 4) described in the release heater-type while microsensor body 12, the support
Beam 13 is formed release simultaneously.
As an example, the structure that microsensor body 12 described in the heater-type also includes obtaining step 4) after discharging is entered
The step of row cleaning.
In step 5), the S5 steps in Fig. 5 are referred to, hydrophobic oleophobic layer is formed in the body structure surface that step 4) obtains
14。
As an example, the body structure surface shape obtained the methods of molecular vapor deposition method or self assembly in step 4) can be used
Into the hydrophobic oleophobic layer 14.
As an example, the material of the hydrophobic oleophobic layer 14 is fluorine material, chlorosilane or siloxanes, specifically, described
The material of hydrophobic oleophobic layer 14 can be silicon fluoride, chlorosilane, siloxanes etc., the thickness of the hydrophobic oleophobic layer 14 can be but
It is not limited only to 1nm~20nm.
In step 6), S6 steps and Figure 13 in Fig. 5 are referred to, removes dredging positioned at the surface of coat of metal 16
Water oleophobic layer 14 and the coat of metal 16.
As an example, selection can be used not have influential corrosive liquid such as Cr or Ni corrosive liquid to remove institute to metal electrode
State coat of metal 16.During this, it is deposited on the hydrophobic oleophobic layer 14 on the surface of coat of metal 16 while peels off.
So far, the different zones on the surface of substrate 10 form difference in functionality surface：On the surface of sensitive electrode 124 (i.e.
Sensitive material mounting area), surface is hydrophilic and oleophilic；On the surface of pad 11, surface hydrophilic oleophylic；In its of the substrate 10
His region is hydrophobic oleophobic.
As an example, also comprise the following steps after step 6)：
7) liquid sensitive material is prepared, described sensitive material includes all kinds of sensitive materials；Preferably, the sensitive material
For metal oxide semiconductor material, its material is ZnO, SnO2、TiO2、In2O3、WO3Or Cu；The fluid-sensitive material it is molten
Agent is water or ethanol；
8) surface of sensitive electrode 124 will be loaded in the fluid-sensitive material autoregistration；
9) the hydrophobic oleophobic layer 14 is removed, the final structure of formation is as shown in figure 14.
As an example, step 8) comprises the following steps：
The fluid-sensitive material 8-1) is used into liquid-transfering gun or capillary drop coating in the heater-type microsensor body
12 surfaces, solvent volatilization is then waited, or purged using nitrogen gun or ear washing bulb, the fluid-sensitive material will not be dredged described
The superficial residence of water oleophobic layer 14, meeting self-alignment type remain in the surface of sensitive electrode 124；
The fluid-sensitive material 8-2) is subjected to low temperature drying, to form sensitive material on the surface of sensitive electrode 124
The bed of material 15.The pattern of the sensitive material 15 can be solid, hollow or loose structure, can also be it is one-dimensional, two-dimentional, three
The assembly of dimension or several dimension materials；The size of the sensitive material 15 is between 1nm-2000nm.
It should be noted that can repeatedly step 8-1) operation, it is suitable to be uploaded on the surface of sensitive electrode 124
The sensitive material of amount.
As an example, in step 8-2) in, the temperature of the low temperature drying is 50 DEG C~120 DEG C, the time of low temperature drying
For 30 minutes~120 minutes.
It should be noted that according to the difference of some material properties, some materials can not be direct after low temperature drying
The sensitive material 15 is formed, is now needed in step 8-2) and then perform fluid-sensitive material progress high temperature
The step of solidification, can be with to form the pattern of sensitive material 15 described in sensitive material 15 on the surface of sensitive electrode 124
Can also be the assembly of one-dimensional, two-dimentional, three-dimensional or several dimension materials for solid, hollow or loose structure；The sensitivity
The size of material layer 15 is between 1nm-2000nm.
As an example, the temperature of the hot setting is 150 DEG C~400 DEG C, the time of hot setting is 30 minutes~300
Minute.
As an example, in step 9), can use oxygen plasma etch method, UV ozone ablution, heating or
Person's wet etching removes the hydrophobic oleophobic layer 14.
Can be for as an example, using oxygen plasma etch to remove the condition of the hydrophobic oleophobic layer 14：Power 7-
30W, oxygen flow 40-80ml/min；Chamber vacuum degree：100Pa, remove time 1min-3min.
Can be for as an example, using UV ozone cleaning to remove the condition of the hydrophobic oleophobic layer 14：100 DEG C of ultraviolet spokes
According to 3min, ultraviolet light wave band is between 185-250nm.
Can be for as an example, using heating to remove the condition of the hydrophobic oleophobic layer 14：Heating-up temperature is 300 DEG C,
Heat time is 4 hours.
As an example, the concentrated sulfuric acid and hydrogen peroxide can be used, (the two volume ratio is 7:3) wet etching removes described hydrophobic
Oleophobic layer 14, time are 3min~10min.
For the ease of understanding the manufacture method of the heater-type microsensor in the present embodiment, below with specific example
Shown：
Example 1
1) monocrystalline silicon piece of (100) crystal orientation is used as substrate body, cleans the surface of the monocrystalline silicon piece；
2) use low-pressure chemical vapor deposition in substrate body surface deposition 1000nm silicon nitride as insulation branch
Support layer；
3) 600nm low stress polysilicon is deposited in silicon chip surface using low-pressure chemical vapor deposition, continues through ion
Inject, diffuse to form the film heating resistance (i.e. doped polysilicon layer) for meeting Ohmic contact, Implantation Energy 60KeV, injectant
Measure 5.5e15/cm2, diffusion conditions：It is main under nitrogen atmosphere to expand 1000 DEG C, 30 minutes；
4) photoetching and use DRIE (deep reaction ion etching) or ICP (inductively coupled plasma) dry etchings 600nm
Polysilicon layer, heating element heater figure is formed, is removed photoresist；
5) deposition 300nm silicon nitrides, photoetching, RIE etch silicon nitride 300nm, the polysilicon layer in removal window of exposure region,
Fairlead is formed, is removed photoresist；
6) splash-proofing sputtering metal TiW/Pt, thickness 30/300nm, then photoetching, ion beam etching (IonBeam) method is used
Metal 330nm is etched, interdigitated sensitive electrode is formed, removes photoresist；
7) Cr, thickness 250nm are evaporated, photoetching is simultaneously corroded, and is formed protection pattern in sensitive electrode and bond pad surface, is gone
Glue；
8) BOE wet methods are simultaneously used using plasma reinforced chemical vapour deposition method deposition low stress silica 400nm, photoetching
The silica of sensitive electrode region and pressure welding disk area is etched, is removed photoresist；
9) photoetching, using RIE dry etching silicon nitrides 1300nm until silicon face, forms heater figure, remove photoresist；
10) silicon of the TMAH that use quality fraction is 25% under 80 DEG C of corrosion micro-heater agent structures, until main body
Structure is hanging, cleaning；
11) using the molecular vapor deposition equipment deposition fluorine decyl trimethoxy silanes of 3nm 17；
12) protection metal Cr is removed using Cr corrosive liquids, cleaned, drying；
13) Zinc oxide powder is dissolved in deionized water, ultrasound 5 minutes, disperseed, stablized and uniform sensitive material
Material；
14) autoregistration is uploaded, and sensitive material is dropped into sensor surface using liquid-transfering gun, is then purged and sensed with rubber pipette bulb
Device surface, be retained in sensitive electrode region sensitive material self-alignment type, be repeated several times, until sensitizing range leave it is appropriate quick
Feel material, then dried 1 hour in 80 DEG C of baking oven；
15) double thin layers, power 25W, oxygen flow 50ml/min, chamber vacuum are removed using plasma washing machine
Degree:100Pa, scavenging period 3min.It is as shown in Figure 6 to prepare the sensor completed.
Example 2：
1) n-type (100) silicon chip is used to clean the silicon chip surface as substrate body；
2) use low-pressure chemical vapor deposition in silicon chip surface deposition 800nm silicon nitride as insulation support layer；
3) splash-proofing sputtering metal TiW/Au, thickness 30/300nm, then photoetching, ion beam etching (IonBeam) method is used
Metal 330nm is etched, interdigitated sensitive electrode and heating element heater is formed, removes photoresist；
4) Ti, thickness 300nm are evaporated, photoetching is simultaneously corroded, and is formed protection pattern in sensitive electrical polar region and bond pad surface, is gone
Glue；
5) BOE wet methods are simultaneously used using plasma reinforced chemical vapour deposition method deposition low stress silica 300nm, photoetching
The silica of sensitive electrode region and pressure welding disk area is etched, is removed photoresist；
6) photoetching, using RIE dry etching silicon nitrides 1100nm until silicon face, forms heater figure, remove photoresist；
7) silicon under isotropic dry etching micro-heater agent structure is used, until agent structure is hanging, is removed photoresist；
8) using the molecular vapor deposition equipment deposition fluorine decyl trimethoxy silanes of 5nm 17；
9) protection metal Ti are removed at 50 DEG C using the pure hydrogen peroxide of analysis, cleaned, drying.Sensor is completed to prepare.
As described above, the heater-type microsensor and its manufacture method, the heater-type microsensor of the present invention include：Lining
Bottom, the interior formation of the substrate are fluted；Pad, positioned at the substrate surface of the groove periphery；Heater-type microsensor master
Body, positioned at the top of the groove, and with the bottom of the groove mutually across a certain distance；The heater-type microsensor body bag
Include：Body supports layer, gauche form heating element heater, the first insulating barrier and sensitive electrode, the gauche form heating element heater and the sensitive electrical
Pole is located at the body supports layer surface, and the gauche form heating element heater is located at the outside of the sensitive electrode, and described first is exhausted
Edge layer is located at the gauche form heater element surface；Support beam, between the substrate and the heater-type microsensor body,
Suitable for the heater-type microsensor body is clamped on the substrate；Hydrophobic oleophobic layer, positioned at the first insulating barrier table
Face, the exposed body supports layer surface, the exposed substrate surface and the support beam surface.The heater-type of the present invention
Microsensor uses heater-type structure, reduces the insulating barrier electric leakage of sensitive material region for caused by sensitive test signal
Interference；The hydrophobic oleophobic layer of patterning is formd in the sensitive electrode region on hanging sensor construction surface, so as to realize
Realize that easy self-alignment type liquid sensitive material is uploaded in sensitive electrode region.The sensitive material of the heater-type microsensor of the present invention
Material, which is uploaded, to be carried out in hanging micro-structure surface, do not damage micro-structural, and processing compatibility is strong, and coat of metal, which removes, to be held
Easily.Upload process sample requirements are small, and non-sensitive area's material simple to operate is easily removed.The heater-type micro sensing utensil of the present invention
Have that processing compatibility is good, practical, manufacturing process is simple, cost is low, be adapted on movable or free standing structure surfacing
The advantages such as load.Compared to prior art, technical solution of the present invention solves prior art and is difficult on hanging or movable structure surface
Tiny area is specified to carry out the difficulty of medium carrying, while heater-type structure avoids common directly-heated type structure due to the break that insulate
Leaked electricity caused by falling into.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (23)
1. a kind of heater-type microsensor, it is characterised in that the heater-type microsensor includes：
Substrate, the interior formation of the substrate are fluted；
Pad, positioned at the substrate surface of the groove periphery；
Heater-type microsensor body, positioned at the top of the groove, and with the bottom of the groove mutually across a certain distance；It is described
Heater-type microsensor body includes：Body supports layer, gauche form heating element heater, the first insulating barrier and sensitive electrode, the gauche form
Heating element heater and the sensitive electrode are located at the body supports layer surface, and the gauche form heating element heater is located at the sensitive electrical
The outside of pole, first insulating barrier are located at the gauche form heater element surface；
Support beam, between the substrate and the heater-type microsensor body, suitable for by the heater-type microsensor
Main body is clamped on the substrate；
Hydrophobic oleophobic layer, positioned at first surface of insulating layer, the exposed body supports layer surface, the exposed substrate
Surface and the support beam surface.
2. heater-type microsensor according to claim 1, it is characterised in that：The substrate includes substrate body and insulation
Supporting layer, the insulation support layer are located at the substrate body surface of the groove periphery, and the pad is located at the insulation
Support layer surface.
3. heater-type microsensor according to claim 2, it is characterised in that：The body supports layer, the support beam
And the insulation support layer is integrated.
4. heater-type microsensor according to claim 1, it is characterised in that：The gauche form heating element heater is METAL HEATING PROCESS
Element.
5. heater-type microsensor according to claim 1, it is characterised in that：The gauche form heating element heater includes：
Doped polysilicon layer, positioned at the body supports layer surface；
Second insulating barrier, is covered in the DOPOS doped polycrystalline silicon layer surface, and second insulating barrier is interior formed with opening, the opening
Expose the doped polysilicon layer；
Metal level is drawn, is filled in the opening and is covered in second surface of insulating layer.
6. heater-type microsensor according to claim 1, it is characterised in that：The material of the hydrophobic oleophobic layer is fluorine-containing
Material, chlorosilane or siloxanes.
7. a kind of heater-type microsensor, it is characterised in that the heater-type microsensor includes：
Substrate, the interior formation of the substrate are fluted；
Pad, positioned at the substrate surface of the groove periphery；
Heater-type microsensor body, positioned at the top of the groove, and with the bottom of the groove mutually across a certain distance；It is described
Heater-type microsensor body includes：Body supports layer, gauche form heating element heater, the first insulating barrier and sensitive electrode, the gauche form
Heating element heater and the sensitive electrode are located at the body supports layer surface, and the gauche form heating element heater is located at the sensitive electrical
The outside of pole, first insulating barrier are located at the gauche form heater element surface；
Support beam, between the substrate and the heater-type microsensor body, suitable for by the heater-type microsensor
Main body is clamped on the substrate；
Sensitive material, the sensitive material are located at the sensitive electrode surfaces.
8. heater-type microsensor according to claim 7, it is characterised in that：The substrate includes substrate body and insulation
Supporting layer, the insulation support layer are located at the substrate body surface of the groove periphery, and the pad is located at the insulation
Support layer surface.
9. heater-type microsensor according to claim 8, it is characterised in that：The body supports layer, the support beam
And the insulation support layer is integrated.
10. heater-type microsensor according to claim 7, it is characterised in that：The gauche form heating element heater adds for metal
Thermal element.
11. heater-type microsensor according to claim 7, it is characterised in that：The gauche form heating element heater includes：
Doped polysilicon layer, positioned at the body supports layer surface；
Second insulating barrier, is covered in the DOPOS doped polycrystalline silicon layer surface, and second insulating barrier is interior formed with opening, the opening
Expose the doped polysilicon layer；
Metal level is drawn, is filled in the opening and is covered in second surface of insulating layer.
12. a kind of manufacture method of heater-type microsensor, it is characterised in that the manufacture method comprises the following steps：
1) substrate is provided；
2) gauche form heating element heater, sensitive electrode and pad are made in the substrate surface, the gauche form heating element heater is positioned at described
On the outside of sensitive electrode, the pad is located on the outside of the gauche form heating element heater, with gauche form heating element heater phase across a certain distance,
And the pad is connected with the sensitive electrode and the heating element heater respectively；
3) coat of metal is formed in the sensitive electrode and the bond pad surface；
4) substrate is etched to discharge heater-type microsensor body, and the heater-type microsensor body includes the gauche form
Heating element heater, the sensitive electrode and the substrate below the gauche form heating element heater, the sensitive electrode；
5) body structure surface obtained in step 4) forms hydrophobic oleophobic layer；
6) hydrophobic oleophobic layer and the coat of metal positioned at the metal coating layer surface are removed.
13. the manufacture method of heater-type microsensor according to claim 12, it is characterised in that：Step 1) includes as follows
Step：
Substrate body 1-1) is provided；
1-2) insulation support layer is formed on the substrate body surface.
14. the manufacture method of heater-type microsensor according to claim 12, it is characterised in that：Step 2) includes as follows
Step：
2-1) low stress polysilicon layer is formed in the substrate surface；
Ion implanting, diffusion 2-2) are carried out to the low stress polysilicon layer, to form doped polysilicon layer；
The doped polysilicon layer 2-3) is etched to define the shape of the gauche form heating element heater；
The second insulating barrier 2-4) is formed in the DOPOS doped polycrystalline silicon layer surface of reservation, and is formed and opened in second insulating barrier
Mouthful, the opening exposes the doped polysilicon layer；
2-5) in step 2-4) obtained body structure surface forms metal level, and the metal level, which is etched, to be formed draws metal level, institute
Sensitive electrode and the pad are stated, the extraction metal level fills up the opening and is covered in second surface of insulating layer.
15. the manufacture method of heater-type microsensor according to claim 12, it is characterised in that：Step 2) includes as follows
Step：
2-1) metal level is formed in the substrate surface；
The metal level 2-2) is etched to form the gauche form heating element heater, the sensitive electrode and the pad.
16. the manufacture method of heater-type microsensor according to claim 12, it is characterised in that：Step 2) and step 3)
Between be additionally included in the step of gauche form heater element surface forms the first insulating barrier.
17. the manufacture method of heater-type microsensor according to claim 12, it is characterised in that：Step 3) and step 4)
Between be additionally included in the step of gauche form heater element surface forms the first insulating barrier.
18. the manufacture method of the heater-type microsensor according to any one of claim 12 to 17, it is characterised in that：Step
It is rapid 6) also to comprise the following steps afterwards：
7) liquid sensitive material is prepared；
8) sensitive electrode surfaces will be loaded in the fluid-sensitive material autoregistration；
9) the hydrophobic oleophobic layer is removed.
19. the manufacture method of heater-type microsensor according to claim 18, it is characterised in that：Step 8) includes as follows
Step：
The fluid-sensitive droplets of material 8-1) is applied to the heater-type microsensor body surface, the fluid-sensitive material is certainly
Alignment formula remaines in the sensitive electrode surfaces；
The fluid-sensitive material 8-2) is subjected to low temperature drying.
20. the manufacture method of heater-type microsensor according to claim 19, it is characterised in that：In step 8-2) in,
The temperature of the low temperature drying is 50 DEG C~120 DEG C, and the time of low temperature drying is 30 minutes~120 minutes.
21. the manufacture method of heater-type microsensor according to claim 19, it is characterised in that：In step 8-2) it
Afterwards, in addition to by the fluid-sensitive material the step of carrying out hot setting.
22. the manufacture method of heater-type microsensor according to claim 21, it is characterised in that：The hot setting
Temperature is 150 DEG C~400 DEG C, and the time of hot setting is 30 minutes~300 minutes.
23. the manufacture method of heater-type microsensor according to claim 18, it is characterised in that：In step 9), adopt
The hydrophobic oleophobic layer is removed with oxygen plasma etch method, UV ozone ablution or wet etching.
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| CN110040678B (en) * | 2019-04-18 | 2021-06-18 | 中国科学院上海微系统与信息技术研究所 | Micro sensor and preparation method thereof |
| CN111289582B (en) * | 2020-03-26 | 2022-03-11 | 微纳感知(合肥)技术有限公司 | MEMS gas sensor, array thereof, gas detection method and preparation method |
| CN112034005B (en) * | 2020-09-08 | 2022-05-10 | 苏州芯镁信电子科技有限公司 | Indirectly-heated silicon-based film catalytic hydrogen sensor and processing method thereof |
| CN112345600B (en) * | 2020-10-21 | 2022-03-11 | 东南大学 | Preparation process of flexible humidity sensor coated with hydrophobic polytetrafluoroethylene microporous material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102928153A (en) * | 2012-11-20 | 2013-02-13 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional vacuum sensor and preparation method of three-dimensional vacuum sensor |
| CN102923644A (en) * | 2012-11-20 | 2013-02-13 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional vacuum sensor and manufacturing method thereof |
| CN104730283A (en) * | 2015-03-12 | 2015-06-24 | 东南大学 | Three-dimensional wind velocity and direction sensor based on MEMS technology and manufacturing method thereof |
| CN104979368A (en) * | 2015-06-29 | 2015-10-14 | 中国科学院上海微系统与信息技术研究所 | Infrared detector array and fabrication method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102923644A (en) * | 2012-11-20 | 2013-02-13 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional vacuum sensor and manufacturing method thereof |
| CN104730283A (en) * | 2015-03-12 | 2015-06-24 | 东南大学 | Three-dimensional wind velocity and direction sensor based on MEMS technology and manufacturing method thereof |
| CN104979368A (en) * | 2015-06-29 | 2015-10-14 | 中国科学院上海微系统与信息技术研究所 | Infrared detector array and fabrication method thereof |
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Application publication date: 20170510 Assignee: SUZHOU HUIWEN NANO TECHNOLOGY CO., LTD. Assignor: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences Contract record no.: 2019310000004 Denomination of invention: Indirectly-heated microsensor and manufacturing method thereof Granted publication date: 20180213 License type: Common License Record date: 20190107 |