CN104977975B - Temperature-unrelated integrated voltage source and current source - Google Patents
Temperature-unrelated integrated voltage source and current source Download PDFInfo
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- CN104977975B CN104977975B CN201410148278.3A CN201410148278A CN104977975B CN 104977975 B CN104977975 B CN 104977975B CN 201410148278 A CN201410148278 A CN 201410148278A CN 104977975 B CN104977975 B CN 104977975B
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Abstract
The invention discloses a temperature-unrelated integrated voltage source and current source. A voltage source circuit branch of the temperature-unrelated integrated voltage source and current source comprises one or more metal oxide semiconductor transistors connected in series and a bipolar junction transistor, wherein the metal oxide semiconductor transistors are coupled to a positive temperature coefficient current source in a folded mode, so that current flowing through the positive temperature coefficient current source is mirrored to the voltage source circuit branch. A current source circuit branch comprises one or more metal oxide semiconductor transistors connected in series, a resistor and a bipolar junction transistor connected with the resistor in parallel, wherein the metal oxide semiconductor transistors are coupled to the positive temperature coefficient current source in a folded mode, so that current flowing through the positive temperature coefficient current source is mirrored to the current source circuit branch.
Description
Technical field
The present invention relates to a kind of integrating power supply, more particularly to a kind of temperature is uncorrelated to integrate voltage source and current source.
Background technology
Energy gap voltage source (bandgap voltage source) is a kind of conventional voltage source, the reference voltage of its output
Do not affected by the change of temperature, that is, its temperature coefficient (temperature coefficient) is zero.Although current value
There is a simple relation (that is, electric current=voltage/resistance) with magnitude of voltage, but the temperature coefficient of almost all of resistor is all
Will not be zero, therefore, it is impossible to directly obtain the uncorrelated electricity of temperature by the uncorrelated voltage source of temperature (such as energy gap voltage source)
Stream source.
Due to tradition produce reference voltage it is different from the method for reference current, it is difficult to both are combined.Therefore, if
Need to be provided with voltage source and current source simultaneously, usually separately design voltage source circuit and current source circuit, to carry respectively
Supply reference voltage and reference current.But, such circuit design can take suitable circuit area, cause area to disappear with power
The waste of consumption.
Therefore a kind of uncorrelated integration voltage source of temperature of proposition and current source are needed badly, to improve conventional voltage source with electricity
The shortcoming in stream source.
The content of the invention
In view of above-mentioned, one of purpose of the embodiment of the present invention is to propose a kind of uncorrelated voltage source of integrating of temperature with electricity
Stream source, which is shared a main circuit and can provide the uncorrelated reference voltage of temperature and reference current respectively, thus saves a large amount of
Circuit area and power consumption.
According to embodiments of the present invention, temperature it is uncorrelated integrate voltage source and current source comprising positive temperature coefficient current source,
Voltage source circuit branch and current source circuit branch.An at least metal-oxide semiconductor (MOS) of the voltage source circuit branch comprising concatenation
Transistor and bipolarity junction transistor, wherein the metal oxide semiconductor transistor of the voltage source circuit branch
Grid is electrically connected to the grid of the metal oxide semiconductor transistor of the positive temperature coefficient current source so that flow through positive temperature
The current mirror in degree coefficient current source is incident upon voltage source circuit branch.Current source circuit branch is partly led comprising an at least metal-oxide
Body transistor and and the resistor that connects and bipolarity junction transistor, wherein the described and resistor that connects and bipolarity junction crystal
Pipe is concatenated with an at least metal oxide semiconductor transistor, wherein the metal oxidation of the current source circuit branch
The grid of thing semiconductor transistor is electrically connected to the metal oxide semiconductor transistor of the positive temperature coefficient current source
Grid so that the current mirror for flowing through positive temperature coefficient current source is incident upon current source circuit branch.
Description of the drawings
Fig. 1 shows the uncorrelated circuit diagram for integrating voltage source and current source of the temperature of the embodiment of the present invention.
Fig. 2A shows the voltage source part of the integrating power supply of Fig. 1.
Fig. 2 B show the current source portion of the integrating power supply of Fig. 1.
Fig. 2 C show the positive temperature coefficient current source of the integrating power supply of Fig. 1.
【Symbol description】
11 positive temperature coefficient current sources
12 voltage source circuit branches
13 current source circuit branches
P1～P8 P-type mos transistors
N1～N6 N-type metal oxide semiconductor transistors
R1～R3 resistors
B1～B4 bipolarity junction transistors
Vref voltage outputs
Specific embodiment
Fig. 1 shows that the temperature of the embodiment of the present invention is uncorrelated and integrates voltage source and current source (hereinafter referred to as integrating power supply)
Circuit diagram.Fig. 2A shows the voltage source part of the integrating power supply of Fig. 1, and Fig. 2 B show the current source portion of the integrating power supply of Fig. 1
Point.
As shown in figure 1, the voltage source (Fig. 2A) of the present embodiment and the shared positive temperature coefficient current source of current source (Fig. 2 B)
11, as shown in Figure 2 C.Therefore, the integrating power supply of the present embodiment can save substantial amounts of circuit area and power consumption.Shown in Fig. 2 C
Positive temperature coefficient current source 11 only illustrate, the also replaceable current source for other with positive temperature coefficient.
In the present embodiment, as shown in Figure 2 C, positive temperature coefficient current source 11 includes the first circuit branch and second circuit
Branch, both simultaneously connect.Specifically, the first circuit branch is sequentially serially connected with an at least p-type metal-oxide to ground connection from power supply
Quasiconductor (MOS) transistor P1, P2, at least N-type metal-oxide semiconductor (MOS) (MOS) transistor N1, a N2, resistor R1 and
Bipolarity junction transistor (such as PNP transistor, its base earth) B1.Wherein, P-type mos (MOS)
Transistor P1, P2 are that diode couples pattern, that is, by grid and the mutual electric property coupling of drain electrode.Second circuit branch is from power supply
An at least P-type mos (MOS) transistor P3, P4, at least a N-type metal-oxide are serially connected with sequentially to ground connection
Quasiconductor (MOS) transistor N3, N4 and bipolarity junction transistor (such as PNP transistor, its base earth) B2.Its
In, N-type metal-oxide semiconductor (MOS) (MOS) transistor N3, N4 are that diode couples pattern, that is, grid is mutual with drain electrode
Electric property coupling.In the present embodiment, the area of the bipolarity junction transistor B1 of the first circuit branch is second circuit branch
The multiple (its value is more than one) of the area of bipolarity junction transistor B2.The metal-oxide semiconductor (MOS) of above-mentioned first circuit branch
(MOS) transistor P1, P2, N1, N2 metal-oxide semiconductor (MOS) (MOS) transistor P3 respectively with second circuit branch, P4,
N3, N4 fold (folding) coupling, that is, corresponding grid is coupled against each other.According to above-mentioned positive temperature coefficient current source 11,
Which flows through the first circuit branch or the electric current of second circuit branch can rise with temperature and rise, that is, tool positive temperature coefficient.
(non-temperature related) voltage source of integrating power supply as shown in Figure 2 A, except including positive temperature coefficient current source
11, also comprising voltage source circuit branch 12, which is sequentially serially connected with an at least metal-oxide semiconductor (MOS) (MOS) to ground connection from power supply
Transistor (such as N-type MOS transistor) P5, P6, resistor R2 and bipolarity junction transistor (such as PNP transistor, its
Base earth) B3.Wherein, metal-oxide semiconductor (MOS) (MOS) transistor P5, P6 are folded and are coupled to positive temperature coefficient current source
11, for example by grid be electrically coupled to positive temperature coefficient current source 11 P-type mos (MOS) transistor (P1,
P2 or P3, P4) grid, thus formed current mirror (current mirror) circuit so that flow through positive temperature coefficient current source
The current mirror of 11 (the first circuit branch or second circuit branches) is incident upon voltage source circuit branch 12.
According to above-mentioned voltage source (Fig. 2A), the mirrored current tool positive temperature coefficient of voltage source circuit branch 12 is flowed through, and
Bipolarity junction transistor B3 has negative temperature coefficient.By the value for adjusting resistor R1 and R2, can be in metal-oxide semiconductor (MOS)
(MOS) provide non-temperature related (reference) voltage output Vref at the node between transistor P6 and resistor R2.Thus, scheme
Voltage source shown in 2A forms an energy gap voltage source, and which is not changed by temperature is affected.
(non-temperature related) current source of integrating power supply as shown in Figure 2 B, except including positive temperature coefficient current source
11, also comprising current source circuit branch 13, its from power supply to ground connection be sequentially serially connected with least one diode coupling kenel (
That is, grid and the mutual electric property coupling of drain electrode) metal-oxide semiconductor (MOS) (MOS) transistor P7, P8, an at least metal-oxide
Quasiconductor (MOS) transistor (such as N-type MOS transistor) N5, N6, and and the resistor R3 that connects and bipolarity junction transistor
(such as PNP transistor, its base earth) B4.Wherein, metal-oxide semiconductor (MOS) (MOS) transistor N5, N6 fold coupling
To positive temperature coefficient current source 11, for example, grid is coupled to the N-type metal-oxide semiconductor (MOS) of positive temperature coefficient current source 11
(MOS) grid of transistor (N1, N2 or N3, N4), thus form current mirror (current mirror) circuit so that just flow through
The current mirror in temperature coefficient current source 11 (the first circuit branch or second circuit branch) is incident upon current source circuit branch 13.At this
In embodiment, the area of the bipolarity junction transistor B4 of current source circuit branch 13 is same as the bipolarity of second circuit branch
The area of junction transistor B2.
According to above-mentioned current source (Fig. 2 B), the mirrored current tool positive temperature coefficient of current source circuit branch 13 is flowed through, and
Bipolarity junction transistor B4 has negative temperature coefficient.By the value for adjusting resistor R1 and R3, it is possible to provide the related (ginseng of non-temperature
Examine) electric current, for example the related electric current of the non-temperature can be obtained with mirror using extra current mirroring circuit (not shown).
Presently preferred embodiments of the present invention is the foregoing is only, protection scope of the present invention is not limited to；It is all its
It should be included in scope of the following claims without departing from the equivalent change or modification that are completed under the disclosed spirit of invention
It is interior.
Claims (13)
1. a kind of temperature is uncorrelated integrates voltage source and current source, comprising：
Positive temperature coefficient current source；
Voltage source circuit branch, at least metal oxide semiconductor transistor comprising concatenation and bipolarity junction transistor,
The grid of the metal oxide semiconductor transistor of wherein described voltage source circuit branch is electrically connected to the positive temperature
The grid of the metal oxide semiconductor transistor in coefficient current source so that flow through the current mirror of the positive temperature coefficient current source
It is incident upon the voltage source circuit branch；And
Current source circuit branch, comprising an at least metal oxide semiconductor transistor and and the resistor that connects and bipolarity junction
Transistor, wherein the described and resistor that connects and bipolarity junction transistor and an at least metal-oxide semiconductor (MOS) crystal
Pipe is concatenated, wherein the grid of the metal oxide semiconductor transistor of the current source circuit branch be electrically connected to it is described
The grid of the metal oxide semiconductor transistor of positive temperature coefficient current source so that flow through the positive temperature coefficient current source
Current mirror is incident upon the current source circuit branch.
2. temperature according to claim 1 is uncorrelated integrates voltage source and current source, wherein the voltage source circuit point
The grid of the metal oxide semiconductor transistor for propping up is electrically coupled to the metal-oxide half of the positive temperature coefficient current source
The grid of conductor transistor, to form current mirroring circuit.
3. temperature according to claim 1 is uncorrelated integrates voltage source and current source, wherein the voltage source circuit point
Also include resistor, be electrically coupled to the metal oxide semiconductor transistor of the voltage source circuit branch with it is bipolar
Between property junction transistor.
4. temperature according to claim 3 is uncorrelated integrates voltage source and current source, wherein the voltage source circuit point
The metal oxide semiconductor transistor for propping up includes P-type mos transistor, and the voltage source circuit branch
The bipolarity junction transistor include positive-negative-positive bipolarity junction transistor.
5. temperature according to claim 4 is uncorrelated integrates voltage source and current source, wherein the voltage source circuit point
From power supply to ground connection, to be sequentially serially connected with two P-type mos transistors, the resistor and positive-negative-positive bipolar
Property junction transistor, the base earth of the positive-negative-positive bipolarity junction transistor.
6. temperature according to claim 1 is uncorrelated integrates voltage source and current source, wherein the current source circuit point
The grid of the metal oxide semiconductor transistor for propping up is electrically coupled to the metal-oxide half of the positive temperature coefficient current source
The grid of conductor transistor, to form current mirroring circuit.
7. temperature according to claim 1 is uncorrelated integrates voltage source and current source, wherein the current source circuit point
Prop up the metal oxide semiconductor transistor for being also serially connected with that at least one diode couples kenel.
8. temperature according to claim 7 is uncorrelated integrates voltage source and current source, wherein the current source circuit point
The metal oxide semiconductor transistor for propping up includes N-type metal oxide semiconductor transistor, the diode coupling kenel
Metal oxide semiconductor transistor includes P-type mos transistor, and the institute of the current source circuit branch
Bipolarity junction transistor is stated comprising positive-negative-positive bipolarity junction transistor.
9. temperature according to claim 8 is uncorrelated integrates voltage source and current source, wherein the current source circuit point
Prop up from power supply the P-type mos transistor that two diodes couple kenels, two N-types are sequentially serially connected with to ground connection
Metal oxide semiconductor transistor, and and the resistor that connects and positive-negative-positive bipolarity junction transistor, the positive-negative-positive is bipolar
The base earth of property junction transistor.
10. temperature according to claim 1 is uncorrelated integrates voltage source and current source, wherein the positive temperature coefficient is electric
Stream source includes：
First circuit branch, is sequentially serially connected with an at least P-type mos transistor to ground connection from power supply, and at least one
N-type metal oxide semiconductor transistor, resistor and bipolarity junction transistor；And
Second circuit branch, is sequentially serially connected with an at least P-type mos transistor to ground connection from power supply, and at least one
N-type metal oxide semiconductor transistor and bipolarity junction transistor.
11. temperature according to claim 10 are uncorrelated to integrate voltage source and current source, wherein first circuit point
The bipolarity junction transistor for propping up includes positive-negative-positive bipolarity junction transistor, and the bipolarity junction of the second circuit branch
Transistor includes positive-negative-positive bipolarity junction transistor.
12. temperature according to claim 11 are uncorrelated to integrate voltage source and current source, wherein first circuit point
The P-type mos transistor for propping up is that diode couples pattern, and the bipolarity junction of first circuit branch
The base earth of transistor；The N-type metal oxide semiconductor transistor of wherein described second circuit branch is coupled for diode
Pattern, and the base earth of the bipolarity junction transistor of the second circuit branch.
13. temperature according to claim 10 are uncorrelated to integrate voltage source and current source, wherein first circuit point
The area of the bipolarity junction transistor for propping up is respectively the bipolarity junction transistor and the electricity of the second circuit branch
The multiple of the area of the bipolarity junction transistor of current source circuit branch, its value are more than one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410148278.3A CN104977975B (en) | 2014-04-14 | 2014-04-14 | Temperature-unrelated integrated voltage source and current source |
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| CN201410148278.3A CN104977975B (en) | 2014-04-14 | 2014-04-14 | Temperature-unrelated integrated voltage source and current source |
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| CN104977975A CN104977975A (en) | 2015-10-14 |
| CN104977975B true CN104977975B (en) | 2017-04-12 |
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| CN114690842B (en) * | 2020-12-29 | 2024-07-02 | 圣邦微电子（北京）股份有限公司 | Current source circuit for biasing bipolar transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1234584A (en) * | 1998-03-25 | 1999-11-10 | 日本电气株式会社 | Reference-voltage generating circuit providing stable output voltage |
| CN1924751A (en) * | 2005-08-30 | 2007-03-07 | 三洋电机株式会社 | Constant current circuit |
| TW201339795A (en) * | 2012-03-22 | 2013-10-01 | Seiko Instr Inc | Reference-voltage circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0535352A (en) * | 1991-07-30 | 1993-02-12 | Sharp Corp | Constant current circuit |
| FR2809833B1 (en) * | 2000-05-30 | 2002-11-29 | St Microelectronics Sa | LOW TEMPERATURE DEPENDENT CURRENT SOURCE |
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2014
- 2014-04-14 CN CN201410148278.3A patent/CN104977975B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1234584A (en) * | 1998-03-25 | 1999-11-10 | 日本电气株式会社 | Reference-voltage generating circuit providing stable output voltage |
| CN1924751A (en) * | 2005-08-30 | 2007-03-07 | 三洋电机株式会社 | Constant current circuit |
| TW201339795A (en) * | 2012-03-22 | 2013-10-01 | Seiko Instr Inc | Reference-voltage circuit |
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