CN104977975A - Temperature-unrelated integrated voltage source and current source - Google Patents
Temperature-unrelated integrated voltage source and current source Download PDFInfo
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- CN104977975A CN104977975A CN201410148278.3A CN201410148278A CN104977975A CN 104977975 A CN104977975 A CN 104977975A CN 201410148278 A CN201410148278 A CN 201410148278A CN 104977975 A CN104977975 A CN 104977975A
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Abstract
The invention discloses a temperature-unrelated integrated voltage source and current source. A voltage source circuit branch of the temperature-unrelated integrated voltage source and current source comprises one or more metal oxide semiconductor transistors connected in series and a bipolar junction transistor, wherein the metal oxide semiconductor transistors are coupled to a positive temperature coefficient current source in a folded mode, so that current flowing through the positive temperature coefficient current source is mirrored to the voltage source circuit branch. A current source circuit branch comprises one or more metal oxide semiconductor transistors connected in series, a resistor and a bipolar junction transistor connected with the resistor in parallel, wherein the metal oxide semiconductor transistors are coupled to the positive temperature coefficient current source in a folded mode, so that current flowing through the positive temperature coefficient current source is mirrored to the current source circuit branch.
Description
Technical field
The present invention relates to a kind of integrating power supply, particularly relate to the uncorrelated integration voltage source of a kind of temperature and current source.
Background technology
Energy gap voltage source (bandgap voltage source) is a kind of conventional voltage source, and its reference voltage exported does not affect by the change of temperature, and also, its temperature coefficient (temperature coefficient) is zero.Although current value and magnitude of voltage have a simple relation (to be also, electric current=voltage/resistance), but the temperature coefficient of nearly all resistor can not be all zero, therefore, directly the uncorrelated current source of temperature cannot be obtained by the uncorrelated voltage source of temperature (such as energy gap voltage source).
Because tradition generation reference voltage is different from the method for reference current, be difficult to both to combine.Therefore, if desired provide voltage source and current source, be generally difference design voltage source circuit and current source circuit, in order to provide reference voltage and reference current respectively simultaneously.But such circuit design can take suitable circuit area, cause the waste of area and power consumption.
Therefore need badly and propose the uncorrelated integration voltage source of a kind of temperature and current source, in order to improve the shortcoming of traditional electrical potential source and current source.
Summary of the invention
In view of above-mentioned, one of object of the embodiment of the present invention is to propose the uncorrelated integration voltage source of a kind of temperature and current source, it is shared a main circuit and can provide the uncorrelated reference voltage of temperature and reference current respectively, thus saves a large amount of circuit areas and power consumption.
According to the embodiment of the present invention, the uncorrelated integration voltage source of temperature and current source comprise positive temperature coefficient (PTC) current source, voltage source circuit branch and current source circuit branch.Voltage source circuit branch comprises at least one metal oxide semiconductor transistor and the bipolarity junction transistor of serial connection, wherein metal oxide semiconductor transistor is folding is coupled to positive temperature coefficient (PTC) current source, makes the current mirror flowing through positive temperature coefficient (PTC) current source be incident upon voltage source circuit branch.Current source circuit branch comprise serial connection at least one metal oxide semiconductor transistor and and the resistor connect and bipolarity junction transistor, wherein metal oxide semiconductor transistor is folding is coupled to positive temperature coefficient (PTC) current source, makes the current mirror flowing through positive temperature coefficient (PTC) current source be incident upon current source circuit branch.
Accompanying drawing explanation
Fig. 1 shows the uncorrelated integration voltage source of temperature of the embodiment of the present invention and the circuit diagram of current source.
Fig. 2 A shows the voltage source part of the integrating power supply of Fig. 1.
Fig. 2 B shows the current source portion of the integrating power supply of Fig. 1.
Fig. 2 C shows the positive temperature coefficient (PTC) current source of the integrating power supply of Fig. 1.
[symbol description]
11 positive temperature coefficient (PTC) current sources
12 voltage source circuit branches
13 current source circuit branches
P1 ~ P8 P-type mos transistor
N1 ~ N6 N-type metal oxide semiconductor transistor
R1 ~ R3 resistor
B1 ~ B4 bipolarity junction transistor
Vref voltage exports
Embodiment
Fig. 1 shows the uncorrelated integration voltage source of temperature of the embodiment of the present invention and the circuit diagram of current source (hereinafter referred to as integrating power supply).Fig. 2 A shows the voltage source part of the integrating power supply of Fig. 1, and Fig. 2 B shows the current source portion of the integrating power supply of Fig. 1.
As shown in Figure 1, the voltage source (Fig. 2 A) of the present embodiment shares a positive temperature coefficient (PTC) current source 11 with current source (Fig. 2 B), as shown in Figure 2 C.Therefore, the integrating power supply of the present embodiment can save a large amount of circuit areas and power consumption.Positive temperature coefficient (PTC) current source 11 shown in Fig. 2 C is only illustration, and also replaceable have the current source of positive temperature coefficient (PTC) for other.
In the present embodiment, as shown in Figure 2 C, positive temperature coefficient (PTC) current source 11 comprises the first circuit branch and second circuit branch, and both also connect.Specifically, first circuit branch is sequentially serially connected with at least one P-type mos (MOS) transistor P1, P2 from power supply to ground connection, at least one N-type metal-oxide semiconductor (MOS) (MOS) transistor N1, N2, resistor R1 and bipolarity junction transistor (such as PNP transistor, its ground level ground connection) B1.Wherein, P-type mos (MOS) transistor P1, P2 are that diode couples pattern, also, by grid and the mutual electric property coupling of drain electrode.Second circuit branch is sequentially serially connected with at least one P-type mos (MOS) transistor P3, P4 from power supply to ground connection, at least one N-type metal-oxide semiconductor (MOS) (MOS) transistor N3, N4 and bipolarity junction transistor (such as PNP transistor, its ground level ground connection) B2.Wherein, N-type metal-oxide semiconductor (MOS) (MOS) transistor N3, N4 are that diode couples pattern, also, by grid and the mutual electric property coupling of drain electrode.In the present embodiment, the area of the bipolarity junction transistor B1 of the first circuit branch is the multiple (its value is greater than) of the area of the bipolarity junction transistor B2 of second circuit branch.Metal-oxide semiconductor (MOS) (MOS) transistor P1, P2, N1, N2 of above-mentioned first circuit branch couple with metal-oxide semiconductor (MOS) (MOS) transistor P3, P4, N3, N4 folding (folding) of second circuit branch respectively, also namely, corresponding grid couples mutually.According to above-mentioned positive temperature coefficient (PTC) current source 11, its electric current flowing through the first circuit branch or second circuit branch can rise with temperature and rise, also, and tool positive temperature coefficient (PTC).
(non-temperature correlation) voltage source of integrating power supply as shown in Figure 2 A, except including positive temperature coefficient (PTC) current source 11, also comprise voltage source circuit branch 12, it is sequentially serially connected with at least one metal-oxide semiconductor (MOS) (MOS) transistor (such as N-type MOS transistor) P5, P6 from power supply to ground connection, resistor R2 and bipolarity junction transistor (such as PNP transistor, its ground level ground connection) B3.Wherein, metal-oxide semiconductor (MOS) (MOS) transistor P5, P6 are folding is coupled to positive temperature coefficient (PTC) current source 11, such as grid is electrically coupled to the grid of P-type mos (MOS) transistor (P1, P2 or P3, P4) of positive temperature coefficient (PTC) current source 11, thus form current mirror (currentmirror) circuit, make to flow through positive temperature coefficient (PTC) current source 11(first circuit branch or second circuit branch) current mirror be incident upon voltage source circuit branch 12.
According to above-mentioned voltage source (Fig. 2 A), flow through the mirrored current tool positive temperature coefficient (PTC) of voltage source circuit branch 12, and bipolarity junction transistor B3 tool negative temperature coefficient.By the value of adjusting resistance device R1 and R2, can (reference) voltage of non-temperature correlation be provided to export Vref by the Nodes between metal-oxide semiconductor (MOS) (MOS) transistor P6 and resistor R2.Thus, the voltage source shown in Fig. 2 A forms an energy gap voltage source, and it is not by the impact of temperature change.
(non-temperature correlation) current source of integrating power supply as shown in Figure 2 B, except including positive temperature coefficient (PTC) current source 11, also comprise current source circuit branch 13, it is sequentially serially connected with at least one diode from power supply to ground connection and couples kenel and (be also, grid with drain electrode mutual electric property coupling) metal-oxide semiconductor (MOS) (MOS) transistor P7, P8, at least one metal-oxide semiconductor (MOS) (MOS) transistor (such as N-type MOS transistor) N5, N6, and and the resistor R3 connect and bipolarity junction transistor (such as PNP transistor, its ground level ground connection) B4.Wherein, metal-oxide semiconductor (MOS) (MOS) transistor N5, N6 are folding is coupled to positive temperature coefficient (PTC) current source 11, such as grid is coupled to the grid of N-type metal-oxide semiconductor (MOS) (MOS) transistor (N1, N2 or N3, N4) of positive temperature coefficient (PTC) current source 11, thus form current mirror (current mirror) circuit, make to flow through positive temperature coefficient (PTC) current source 11(first circuit branch or second circuit branch) current mirror be incident upon current source circuit branch 13.In the present embodiment, the area of the bipolarity junction transistor B4 of current source circuit branch 13 is same as the area of the bipolarity junction transistor B2 of second circuit branch.
According to above-mentioned current source (Fig. 2 B), flow through the mirrored current tool positive temperature coefficient (PTC) of current source circuit branch 13, and bipolarity junction transistor B4 tool negative temperature coefficient.By the value of adjusting resistance device R1 and R3, (reference) electric current of non-temperature correlation can be provided, such as, extra current mirroring circuit (not shown) can be used to obtain the electric current of described non-temperature correlation with mirror.
The foregoing is only preferred embodiment of the present invention, and be not used to limit protection scope of the present invention; Under all other does not depart from the spirit that invention discloses, the equivalence that completes changes or modifies, and all should comprise within the scope of the appended claims.
Claims (13)
1. the uncorrelated integration voltage source of temperature and a current source, comprises:
Positive temperature coefficient (PTC) current source;
Voltage source circuit branch, comprise at least one metal oxide semiconductor transistor and the bipolarity junction transistor of serial connection, wherein said metal oxide semiconductor transistor is folding is coupled to described positive temperature coefficient (PTC) current source, makes the current mirror flowing through described positive temperature coefficient (PTC) current source be incident upon described voltage source circuit branch; And
Current source circuit branch, comprise serial connection at least one metal oxide semiconductor transistor and and the resistor connect and bipolarity junction transistor, wherein said metal oxide semiconductor transistor is folding is coupled to described positive temperature coefficient (PTC) current source, makes the current mirror flowing through described positive temperature coefficient (PTC) current source be incident upon described current source circuit branch.
2. the uncorrelated integration voltage source of temperature according to claim 1 and current source, the grid of the metal oxide semiconductor transistor of wherein said voltage source circuit branch is electrically coupled to the grid of the metal oxide semiconductor transistor of described positive temperature coefficient (PTC) current source, to form current mirroring circuit.
3. the uncorrelated integration voltage source of temperature according to claim 1 and current source, wherein said voltage source circuit branch also comprises resistor, is electrically coupled between described metal oxide semiconductor transistor and bipolarity junction transistor.
4. the uncorrelated integration voltage source of temperature according to claim 3 and current source, the metal oxide semiconductor transistor of wherein said voltage source circuit branch comprises P-type mos transistor, and described bipolarity junction transistor comprises positive-negative-positive bipolarity junction transistor.
5. the uncorrelated integration voltage source of temperature according to claim 4 and current source, wherein said voltage source circuit branch is sequentially serially connected with two P-type mos transistors, described resistor and positive-negative-positive bipolarity junction transistor from power supply to ground connection, its ground level ground connection.
6. the uncorrelated integration voltage source of temperature according to claim 1 and current source, the grid of the metal oxide semiconductor transistor of wherein said current source circuit branch is electrically coupled to the grid of the metal oxide semiconductor transistor of described positive temperature coefficient (PTC) current source, to form current mirroring circuit.
7. the uncorrelated integration voltage source of temperature according to claim 1 and current source, wherein said current source circuit branch is also serially connected with the metal oxide semiconductor transistor that at least one diode couples kenel.
8. the uncorrelated integration voltage source of temperature according to claim 7 and current source, the metal oxide semiconductor transistor of wherein said current source circuit branch comprises N-type metal oxide semiconductor transistor, the metal oxide semiconductor transistor that described diode couples kenel comprises P-type mos transistor, and described bipolarity junction transistor comprises positive-negative-positive bipolarity junction transistor.
9. the uncorrelated integration voltage source of temperature according to claim 8 and current source, wherein said current source circuit branch is sequentially serially connected with from power supply to ground connection the P-type mos transistor that two diodes couple kenel, two N-type metal oxide semiconductor transistors, and and the resistor connect and positive-negative-positive bipolarity junction transistor, its ground level ground connection.
10. the uncorrelated integration voltage source of temperature according to claim 1 and current source, wherein said positive temperature coefficient (PTC) current source comprises:
First circuit branch, is sequentially serially connected with at least one P-type mos transistor from power supply to ground connection, at least one N-type metal oxide semiconductor transistor, resistor and bipolarity junction transistor; And
Second circuit branch, is sequentially serially connected with at least one P-type mos transistor from power supply to ground connection, at least one N-type metal oxide semiconductor transistor and bipolarity junction transistor.
The uncorrelated integration voltage source of 11. temperature according to claim 10 and current source, the bipolarity junction transistor of wherein said first circuit branch comprises positive-negative-positive bipolarity junction transistor, and the bipolarity junction transistor of described second circuit branch comprises positive-negative-positive bipolarity junction transistor.
The uncorrelated integration voltage source of 12. temperature according to claim 11 and current source, the P-type mos transistor of wherein said first circuit branch is that diode couples pattern, and the ground level ground connection of described bipolarity junction transistor; The N-type metal oxide semiconductor transistor of wherein said second circuit branch is that diode couples pattern, and the ground level ground connection of described bipolarity junction transistor.
The uncorrelated integration voltage source of 13. temperature according to claim 10 and current source, the area of the bipolarity junction transistor of wherein said first circuit branch is respectively the multiple of the area of the bipolarity junction transistor of described second circuit branch and the bipolarity junction transistor of described current source circuit branch, and its value is greater than one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410148278.3A CN104977975B (en) | 2014-04-14 | 2014-04-14 | Temperature-unrelated integrated voltage source and current source |
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| CN201410148278.3A CN104977975B (en) | 2014-04-14 | 2014-04-14 | Temperature-unrelated integrated voltage source and current source |
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| CN104977975A true CN104977975A (en) | 2015-10-14 |
| CN104977975B CN104977975B (en) | 2017-04-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114690842A (en) * | 2020-12-29 | 2022-07-01 | 圣邦微电子（北京）股份有限公司 | Current source circuit for biasing bipolar transistor |
| CN114690842B (en) * | 2020-12-29 | 2024-07-02 | 圣邦微电子（北京）股份有限公司 | Current source circuit for biasing bipolar transistor |
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| JPH0535352A (en) * | 1991-07-30 | 1993-02-12 | Sharp Corp | Constant current circuit |
| CN1234584A (en) * | 1998-03-25 | 1999-11-10 | 日本电气株式会社 | Reference-voltage generating circuit providing stable output voltage |
| US20020021116A1 (en) * | 2000-05-30 | 2002-02-21 | Stmicroelectronics S.A. | Current source with low temperature dependence |
| CN1924751A (en) * | 2005-08-30 | 2007-03-07 | 三洋电机株式会社 | Constant current circuit |
| TW201339795A (en) * | 2012-03-22 | 2013-10-01 | Seiko Instr Inc | Reference-voltage circuit |
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2014
- 2014-04-14 CN CN201410148278.3A patent/CN104977975B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0535352A (en) * | 1991-07-30 | 1993-02-12 | Sharp Corp | Constant current circuit |
| CN1234584A (en) * | 1998-03-25 | 1999-11-10 | 日本电气株式会社 | Reference-voltage generating circuit providing stable output voltage |
| US20020021116A1 (en) * | 2000-05-30 | 2002-02-21 | Stmicroelectronics S.A. | Current source with low temperature dependence |
| CN1924751A (en) * | 2005-08-30 | 2007-03-07 | 三洋电机株式会社 | Constant current circuit |
| TW201339795A (en) * | 2012-03-22 | 2013-10-01 | Seiko Instr Inc | Reference-voltage circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114690842A (en) * | 2020-12-29 | 2022-07-01 | 圣邦微电子（北京）股份有限公司 | Current source circuit for biasing bipolar transistor |
| CN114690842B (en) * | 2020-12-29 | 2024-07-02 | 圣邦微电子（北京）股份有限公司 | Current source circuit for biasing bipolar transistor |
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| CN104977975B (en) | 2017-04-12 |
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