CN104965392B - Vertical recycling and air sealing device for immersion type photoetching machine - Google Patents
Vertical recycling and air sealing device for immersion type photoetching machine Download PDFInfo
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- CN104965392B CN104965392B CN201510423584.8A CN201510423584A CN104965392B CN 104965392 B CN104965392 B CN 104965392B CN 201510423584 A CN201510423584 A CN 201510423584A CN 104965392 B CN104965392 B CN 104965392B
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- 238000007789 sealing Methods 0.000 title claims abstract description 73
- 238000001259 photo etching Methods 0.000 title claims abstract description 17
- 238000007654 immersion Methods 0.000 title abstract description 27
- 238000004064 recycling Methods 0.000 title abstract 12
- 239000007788 liquid Substances 0.000 claims abstract description 161
- 238000002347 injection Methods 0.000 claims abstract description 77
- 239000007924 injection Substances 0.000 claims abstract description 77
- 238000011084 recovery Methods 0.000 claims description 90
- 239000011159 matrix material Substances 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 230000007246 mechanism Effects 0.000 claims description 23
- 239000012530 fluid Substances 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 4
- 235000012489 doughnuts Nutrition 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 9
- 239000007789 gas Substances 0.000 description 55
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 6
- 238000010146 3D printing Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000000671 immersion lithography Methods 0.000 description 3
- 230000000452 restraining effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 201000004569 Blindness Diseases 0.000 description 1
- 206010063045 Effusion Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000386 athletic effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012612 static experiment Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a vertical recycling and air sealing device for an immersion type photoetching machine. A central conical hole is formed in a base body of an immersion unit; a vertical air liquid recycling cavity and an air injection cavity are formed in the bottom surface of the immersion unit; a horizontal liquid injection opening, a horizontal liquid recycling opening, an air injection opening and a vertical air liquid recycling opening are formed in the base body of the immersion unit; a central through hole is formed in the lower end cover of the immersion unit; a vertical air liquid recycling hole slot and an air sealing hole slot are formed in the top surface of the lower end cover of the immersion unit; vertical air liquid recycling holes are formed in the vertical air liquid recycling hole slot; air sealing holes are formed in the air sealing hole slot; a certain micro hole is positioned on a perpendicular bisector of two closest micro holes in the adjacent vertical recycling holes. The vertical recycling and air sealing device can finish the sealing function for a gap flow field in the immersion type photoetching machine; the boundary of the flow field of immersion liquid is restrained by recycling negative pressure for vertical recycling and air flow for air sealing, so that leakage of the immersion liquid is avoided in a high-speed running process of the photoetching machine.
Description
Technical field
It is more particularly to a kind of to return for the vertical of immersed photoetching machine the present invention relates to a kind of flow field sealing device
Receive and gas sealing mechanism.
Background technology
Litho machine is one of the Core equipment for manufacturing super large-scale integration, modern lithographic machine based on optical lithography,
It accurately projects the figure on mask plate and is exposed on the silicon chip of coated photoresist using optical system.It includes one
LASER Light Source, optical system, one piece of projection mask being made up of graphics chip, one light is scribbled to Barebone and one
The silicon chip of quick photoresist.
Liquid immersion lithography (Immersion Lithography) equipment by last a piece of projection objective group and silicon chip it
Between fill the liquid of certain high index of refraction, be the dry lithography machine of gas relative to intermediate medium, improve the number of projection objective
Value aperture (NA), so as to improve the resolution and depth of focus of lithographic equipment.In the Next Generation Lithographies machine having pointed out, immersion light
Carve and minimum is changed to existing equipment, there is good inheritance to present dry lithography machine.At present frequently with scheme be office
Portion's immersion method, will liquid be limited in the regional area between silicon chip top and the lower surface of last a piece of projection objective, and
Keep the liquid flowing of steady and continuous.In stepping-scan-type lithographic equipment, silicon chip carries out the scanning of high speed in exposure process
Liquid in exposure area is taken away flow field by motion, this athletic meeting, and so as to cause leakage, the liquid of leakage can be on a photoresist
Water mark is formed, exposure quality is had a strong impact on.With the carrying out of photoetching process, it is miscellaneous that the decomposition of photoresist can produce granule and bubble etc.
Matter, these impurity can equally affect exposure quality, need to utilize the flowing of liquid that these impurity are taken away into immersion flow field.Therefore, soak
Do not have in formula photoetching technique must emphasis solve the problems, such as the turnover rate of the leakage of liquid and immersion liquid in the course of work.
At present in existing solution, key problems-solving is the sealing problem of liquid filling body, using hermetic seal or
Liquid containment member is around the gap flow field between projection objective group end element and silicon chip.Dry-gas Sealing Technology is around filling stream
On the periphery of field, annular air curtain is formed by applying gases at high pressure, liquid filling body is limited in certain border circular areas.
Liquid-tight encapsulation technique is then using the third party liquid (typically magnetic fluid or hydrargyrum etc.) incompatible with liquid filling body, around filling
Flow field is sealed.But have the following disadvantages：Liquid sealing means have very harsh requirement to sealing liquid, are guaranteeing sealing
While performance requirement, it is necessary to ensure that sealing liquid is not mutually dissolved with liquid filling body and photoresist (or Topcoat) and fills out
The not phase counterdiffusion of topping up body.In substrate high speed motions, outside air or sealing liquid are once involved in or dissolve or expand
In being scattered to liquid filling body, all exposure quality can be had a negative impact.
The content of the invention
Gap flow field sealing problem in order to solve local immersion lithography, it is an object of the invention to provide one
The vertical recovery for immersed photoetching machine and gas sealing mechanism are planted, gap flow field is prevented using air-tight structure at flow field edge
In liquid leakage, so as to meet the requirement of litho machine high speed operation situation.
The technical solution used in the present invention is：
Vertical recovery of the invention and gas sealing mechanism are provided between the projection objective group and silicon chip of immersed photoetching machine,
The vertical recovery and gas sealing mechanism include submergence unit matrix and submergence unit bottom end cover：
1) submergence unit matrix：
Center taper hole is provided with submergence unit matrix, taper hole outside submergence unit matrix bottom surface in center is provided with successively together
The vertical gas-liquid of heart annulus reclaims chamber and gas injection chamber, and symmetrical two sides have level note in the side of submergence unit matrix four
Liquid mouth and horizontal liquid recovery port, symmetrical other two sides have gas injection port, level in the side of submergence unit matrix four
Vertical gas-liquid recovery port is provided with the submergence unit matrix of liquid injection port and horizontal liquid recovery port both sides；
2) submergence unit bottom end cover：
Central through hole is provided with submergence unit bottom end cover, the outside submergence unit lower end hd top face of central through hole is provided with successively
The gentle sealing hole slot of vertical gas-liquid recovery holes groove of donut, the gentle sealing hole slot of vertical gas-liquid recovery holes groove respectively with submergence
The vertical gas-liquid of unit matrix reclaims that chamber is corresponding with gas injection chamber to be communicated；Multiple tracks is provided with vertical gas-liquid recovery holes groove to be circumferentially spaced
Used as vertical gas-liquid recovery holes, hermetic seal hole slot is provided with micropore together circumferentially uniformly at intervals as hermetic seal to uniform micropore
Hole, each micropores of vertical gas-liquid recovery holes be respectively positioned in the vertical gas-liquid recovery holes of neighboring track most close to two micropore midpoints connect
On the perpendicular bisector of line, each micropore of airtight sealing of hole be respectively positioned in the vertical gas-liquid recovery holes of outmost turns most close to two micropores in
On the perpendicular bisector of point line.
By the connection simultaneously transition of gas injection runner, gas injection runner between gas injection port and gas injection chamber on described submergence unit matrix
Into fairshaped horn-like, gradually increase is ultimately extended on gas injection chamber opening, and gas injection runner difference gas injection port connects with gas injection chamber
Connect the rounded transition in place.
The vertical gas-liquid of described vertical gas-liquid recovery port Jing reclaims runner and communicates with vertical gas-liquid recovery chamber, horizontal fluid injection
Respectively the horizontal fluid injection runners of Jing, horizontal liquid recovery runner reclaim chamber and communicate with vertical gas-liquid for mouth, horizontal liquid recovery port, gas injection
Mouth Jing gas injections runner is communicated with gas injection chamber.
The micro-pore shape of the described gentle sealing hole of vertical gas-liquid recovery holes is circular or square, vertical gas-liquid recovery holes edge
Circumference multiple tracks quantity is more than two circles；The shape of the gentle sealing hole of each vertical gas-liquid recovery holes be not limited to it is circular or square,
The number of turns of vertical gas-liquid recovery holes is not limited to two circles or more.
Symmetrically be provided with the side horizontal direction of described submergence unit matrix center taper hole horizontal fluid injection runner exit and
Horizontal liquid reclaims flow channel entry point, and it is in broken line that horizontal fluid injection runner exit and horizontal liquid reclaim flow channel entry point and be section
Curved slot arrangement, and there is difference in height in vertical direction in horizontal fluid injection runner exit and horizontal liquid recovery flow channel entry point.
Described submergence unit bottom end cover is integrally formed, and the gentle sealing hole of the vertical gas-liquid recovery holes of bottom end cover is opened in
On integrally formed submergence unit bottom end cover.
The invention has the advantages that：
1st, after having used new vertical recovery of the present invention and gas sealing mechanism, with 3D printing technique straight forming
Submergence unit, among can be used for the test experiments of dynamic sealing performance, and the movement velocity of silicon chip can reach 350mm/s
And do not leak.The submergence unit of the 3D printing molding of device of the present invention is not used, is used for static experiment, i.e. silicon
Piece is resting state, for silicon chip speed during dynamic experiment also only in 100mm/s or so；The machine of device of the present invention is not used
The submergence unit of tool polish molding, can be used for dynamic experiment, and the movement velocity of silicon chip can reach 400mm/s, but be processed into
Originally greatly increase, can exceed 3D printing cost 5-10 times is even more more.
2nd, the vertical gas-liquid recovery holes being interspersed can strengthen the restraining forceies on stream field border, so as to improve sealing
Energy.
3rd, because liquid leakage mostly occurs between the two neighboring vertical gas-liquid recovery holes of outermost layer, therefore airtight sealing of hole is set
Put on the perpendicular bisector of the two neighboring vertical gas-liquid recovery holes circle center line connecting of outermost layer, the sealing effect of submergence unit can be improved
Really, it is more preferable to prevent liquid leakage.
4th, the gentle sealing hole of vertical gas-liquid recovery holes is arranged on Same Part, it is not necessary to increase to process airtight sealing of hole
One needs the part that polish is punched, and can reduce the work flow of submergence unit, saves processing cost, while it is difficult to simplify assembling
Degree.
5th, gas injection runner can allow gas evenly must be distributed among gas injection chamber into streamlined horn-like.Due to test
The deficiency of method and test equipment, the beneficial effect can only be verified by emulation.
6th, all external interfaces and inner flow passage are integrated on submergence unit matrix this part, and are beaten by 3D
Print technology disposably completes internal all of complicated water runner, and this is very big must to have saved cost, reduce difficulty of processing, simplify dress
With process.
7th, the relative position of the gentle sealing hole of the vertical gas-liquid recovery holes of submergence unit bottom end cover is determined, it is to avoid designed
Blindness in journey.
Description of the drawings
Fig. 1 is the rough schematic view that the present invention is mutually assembled with projection lens set.
Fig. 2 is submergence unit blast profile.
Fig. 3 is the top view that submergence unit matrix 2a cuts open from centre position.
Fig. 4 is submergence unit matrix 2a upward views.
Fig. 5 is the schematic diagram of tubaeform gas injection runner 4d.
Fig. 6 is the top view of submergence unit bottom end cover 2b.
The vertical gas-liquid recovery holes arrangement schematic diagrams of Fig. 7.
The airtight sealing of hole arrangement schematic diagrams of Fig. 8.
In figure：1st, projection lens set, 2, vertical recovery and gas sealing mechanism, 2A, submergence unit matrix, 2B, submergence unit
Bottom end cover, 3A, horizontal liquid injection port, 3B, horizontal liquid recovery port, 3C, vertical gas-liquid recovery port, 3D, gas injection port, 4A, level note
Liquid runner, 4B, horizontal liquid reclaim runner, and 4C, vertical gas-liquid reclaim runner, and 4D, gas injection runner, 5A, horizontal liquid injection port are exported,
5B, horizontal liquid recovery port entrance, 5C, vertical gas-liquid reclaim chamber, 5D, gas injection chamber, 6A, vertical gas-liquid recovery holes, 6B, hermetic seal
Hole, 7, silicon chip, 11, immersion liquid.
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment is described in further detail to the present invention.
As shown in figure 1, vertical recovery and gas sealing mechanism 2 are arranged between projection objective group 1 and silicon chip 7, it is vertical to reclaim
Center taper hole is provided with gas sealing mechanism 2, the major function of vertical recovery and gas sealing mechanism 2 is to be limited in immersion liquid 11
The underface of projection objective group 1, the light sent from projection objective group 1 leads to through vertical recovery with the center of gas sealing mechanism 2
Immersion liquid 11 is entered behind hole, i.e., to be radiated on silicon chip 7 through immersion liquid 11, complete exposure process, the folding of immersion liquid
Penetrate rate higher than air such that it is able to improve the numerical aperture and resolution of etching system.
Reclaim and gas sealing mechanism 2 is by submergence unit matrix 2A, submergence unit bottom end cover 2B as shown in Fig. 2 vertical, two
The surface of part is close together, and the joint place on surface has sealing function, is fastened with screw in outside.Wherein：
1）Submergence unit matrix 2A：
As shown in Figure 3 the submergence unit matrix 2A shown in the sectional view and accompanying drawing 4 of submergence unit matrix 2A is looked up
Figure, is provided with center taper hole on submergence unit matrix 2A, horizontal liquid injection port 3A of matrix outside for Relative distribution of center taper hole and
Matrix horizontal liquid recovery port 3B, horizontal liquid injection port 3A of matrix is connected with horizontal fluid injection runner 4A, matrix horizontal liquid recovery port
3B reclaims runner 4B and is connected with horizontal liquid, and the exit 5A of horizontal fluid injection runner 4A and horizontal liquid reclaim entering for runner 4B
Fold-line-shaped is in 5B structures at mouthful, so as to buffer the impact of big flow fluid injection and current in removal process.The horizontal fluid injection of matrix
There is in height a difference in mouth 3A and horizontal liquid recovery port 3B, to ensure that the flow field of immersion liquid 11 can be covered with after initializing
The whole lower end of camera lens 1.Horizontal liquid injection port 3A is external interface, to connect with liquid-supplying system；Horizontal liquid recovery port is external
With negative pressure system connection.
Horizontal liquid injection port 3A and horizontal liquid recovery port 3B both sides are vertical gas-liquid recovery port 3C, vertical gas-liquid recovery port 3C
It is connected with vertical gas-liquid runner 4C, vertical gas-liquid runner 4C then leads to vertical gas-liquid or reclaims chamber 5C.Vertical gas-liquid reclaims chamber 5C
The vertical gas-liquid recovery holes 6A top of submergence unit bottom end cover 2B is covered in, for undertaking recovery negative pressure.Vertical gas-liquid recovery port
3C is external interface, to be connected with negative pressure recovery system.
It is gas injection port 3D, gas injection port 3D and gas injection as shown in figure 5, being distributed into vertical direction with horizontal fluid injection runner 4A
Runner 4D is connected, and gas injection runner 4D leads to gas injection chamber 5D, and gas injection runner 4D is the tubaeform shape being gradually open, so as to ensure gas
After gas injection runner 4D, more uniform must can be distributed among the 5D of gas injection chamber.Gas injection chamber 5D is covered under submergence unit
The airtight sealing of hole 6B tops of end cap 2B, gas injection port 3D external interfaces, to be connected with gas supply system.
Submergence unit matrix 2A can disposably machine internal all of complicated water runner by 3D printing technique, so as to
Greatly reduce processing cost used, and reduce assembling brought difficulty.
2）Submergence unit bottom end cover 2B：
It is as shown in Figure 6 the top view of submergence unit bottom end cover 2B, on submergence unit bottom end cover 2B center circle is provided with
Shape through hole, central circular through hole is outwards a series of micropores in concentric ring-shaped distribution, wherein outermost for airtight sealing of hole
6B, within airtight sealing of hole 6B for vertical gas-liquid recovery holes 6A, vertical gas-liquid recovery holes 6A up reclaim chamber phase with vertical gas-liquid
Even 5C, airtight sealing of hole 6B are up then connected with gas injection chamber 5D.
By the submergence unit bottom end cover 2B structures, it is possible to achieve vertically gentle sealing hole 6B of gas-liquid recovery holes 6A is placed in together
On one part, so as to convenient processing and assembling.
The vertical gas-liquid recovery holes 6A array of submergence unit bottom end cover 2B has specific characteristic in arrangement, as shown in Figure 7,
, into being interspersed, each vertical gas-liquid recovery holes 6A center of circle is respectively positioned on outer ring or inner ring is two neighboring for vertical gas-liquid recovery holes 6A
On the perpendicular bisector of vertical gas-liquid recovery holes 6A center of circle midpoint line, so as to improve the pact on vertical gas-liquid recovery holes 6A stream field border
Shu Zuoyong.
The airtight sealing of hole 6B arrays of submergence unit bottom end cover 2B also have specific characteristic in arrangement, as shown in Figure 8, each
The individual airtight sealing of hole 6B centers of circle are all located on the perpendicular bisector of the vertical gas-liquid recovery holes 6A circle center line connecting of two, adjacent outermost circle, so as to carry
High sealing effect, prevents liquid leakage.
The course of work principle of the present invention is as follows：
As shown in figure 1, giving vertical recovery and the position in a lithography system of gas sealing mechanism 2.In exposure process, light
Line is by mask plate, projection objective group 1 and the gap flow field for being formed is filled by immersion liquid 11, is radiated at the photoresist of silicon chip 7
On, silicon chip 3 is exposed, the figure on mask is accurately transferred on the photoresist of silicon chip.Submergence unit matrix 2A
It is connected on pose adjustment mechanism, for adjusting the vertical locus reclaimed with gas sealing mechanism 2 and attitude.
When silicon chip is static, the immersion liquid 11 in fluid injection pipeline is by the horizontal reservoir channel 4A on submergence unit matrix 2A
Injection, immersion liquid is downward along the slit that the center taper hole on submergence unit matrix 2A and the taper seat of projection objective group 1 are constituted
Gap flow field is flowed into, immersion liquid 11 can be filled in the gap of projection objective and the composition of silicon chip 3, form gap flow field.
With the injection of liquid, the liquid level at the taper hole of center is constantly raised, meanwhile, the liquid in gap flow field is in level side
Spread upward all round.The vertical gas-liquid of bottom end cover is run into the immersion liquid of surrounding diffusion reclaim chamber 5C and vertical gas-liquid recovery holes
After the stairstepping recovery structure of 6A arrays composition, a complete flow field border will be formed in the presence of negative pressure.Work as note
Liquid-recovery is reached after balance, just completes the gap flow field filling process of submergence unit.
Sealing gas enter gas injection chamber 5D by matrix gas injection passage 4D, will be in hermetic seal by airtight sealing of hole 6B effusions
Hole 6B air curtains formed below, are distributed in the surrounding of gap flow field.Because internal vertical gas-liquid recovery holes 6A lower section is negative pressure, therefore gas
Inwardly flowing is known from experience so as to constrain liquid boundary.
Silicon chip has traction action in motor process to immersion liquid so that the immersion liquid in the silicon chip direction of motion
11 have trend outwardly, and the restraining forceies for easily causing liquid boundary are not enough, so as to leak.Because vertical gas-liquid is returned
Batter 6A can reclaim the negative pressure formed in the 5C of chamber by vertical gas-liquid, and to liquid boundary under each hole effect of contraction, old friend are produced
The recovery holes of staggered arrangement cloth can strengthen the coverage effect of negative pressure in gap between projection objective group 1 and silicon chip 7, so as to increase convection current
The restraining forceies on field border.But the effect of contraction is then less apart from Kong Yueyuan, therefore liquid leakage is it occur frequently that in two neighboring vertical
The centre position of gas-liquid recovery holes 6A, increases airtight sealing of hole 6B on this position, can avoid leakage herein, strengthens sealing effect
Really, so as to improve silicon chip motion speed.
Claims (6)
1. a kind of vertical recovery and gas sealing mechanism for immersed photoetching machine, in the projection objective group of immersed photoetching machine
(1) vertical recovery and gas sealing mechanism (2) are provided with and silicon chip (7) between, the vertical recovery and gas sealing mechanism (2) include
Submergence unit matrix (2A) and submergence unit bottom end cover (2B), it is characterised in that：
1) submergence unit matrix (2A)：
Center taper hole is provided with submergence unit matrix (2A), taper hole outside submergence unit matrix (2A) bottom surface in center is opened successively
The vertical gas-liquid for having donut reclaims chamber (5C) and gas injection chamber (5D), and in submergence unit matrix (2A) four side symmetrical both sides
Face has horizontal liquid injection port (3A) and horizontal liquid recovery port (3B), symmetrical another in submergence unit matrix (2A) four side
Outer two sides have the submergence unit base of gas injection port (3D), horizontal liquid injection port (3A) and horizontal liquid recovery port (3B) both sides
Vertical gas-liquid recovery port (3C) is provided with body (2A)；
2) submergence unit bottom end cover (2B)：
Central through hole is provided with submergence unit bottom end cover (2B), outside submergence unit bottom end cover (2B) top surface of central through hole is successively
Be provided with the gentle sealing hole slot of vertical gas-liquid recovery holes groove of donut, the gentle sealing hole slot of vertical gas-liquid recovery holes groove respectively with
The vertical gas-liquid of submergence unit matrix (2A) reclaims chamber (5C) and gas injection chamber (5D) correspondence and communicates；Open on vertical gas-liquid recovery holes groove
There is multiple tracks micropore circumferentially uniformly at intervals as vertical gas-liquid recovery holes (6A), hermetic seal hole slot is provided with and is circumferentially spaced together
Uniform micropore is respectively positioned on the vertical gas-liquid of neighboring track and returns as airtight sealing of hole (6B), each micropore of vertical gas-liquid recovery holes (6A)
In batter (6A) most close to two micropore midpoint lines perpendicular bisector on, each micropore of airtight sealing of hole (6B) is respectively positioned on most
In the vertical gas-liquid recovery holes (6A) in outer ring most close to two micropore midpoint lines perpendicular bisector on.
2. a kind of vertical recovery and gas sealing mechanism (2) for immersed photoetching machine according to claim 1, its feature
It is：It is connected simultaneously by gas injection runner (4D) between gas injection port (3D) and gas injection chamber (5D) in described submergence unit matrix (2A)
Transition, into fairshaped horn-like, gradually increase is ultimately extended on gas injection chamber (5D) opening gas injection runner (4D), gas injection runner
(4D) gas injection port (3D) and the rounded transition in gas injection chamber (5D) junction respectively.
3. a kind of vertical recovery and gas sealing mechanism (2) for immersed photoetching machine according to claim 1, its feature
It is：The vertical gas-liquids of described vertical gas-liquid recovery port (3C) Jing reclaim runner (4C) and communicate with vertical gas-liquid recovery chamber (5C),
Respectively the horizontal fluid injection runners (4A) of Jing, horizontal liquid reclaim runner (4B) for horizontal liquid injection port (3A), horizontal liquid recovery port (3B)
Chamber (5C) is reclaimed with vertical gas-liquid to communicate, gas injection port (3D) Jing gas injection runners (4D) is communicated with gas injection chamber (5D).
4. a kind of vertical recovery and gas sealing mechanism (2) for immersed photoetching machine according to claim 1, its feature
It is：The micro-pore shape of the described gentle sealing hole (6B) of vertical gas-liquid recovery holes (6A) is circular or square, and vertical gas-liquid is returned
Circumferentially multiple tracks quantity is more than two circles to batter (6A)；The shape of the gentle sealing hole (6B) of each vertical gas-liquid recovery holes (6A)
It is not limited to circular or square, the number of turns of vertical gas-liquid recovery holes (6A) is not limited to two circles or more.
5. a kind of vertical recovery and gas sealing mechanism (2) for immersed photoetching machine according to claim 1, its feature
It is：Horizontal fluid injection runner exit is symmetrically provided with the side horizontal direction of described submergence unit matrix (2A) center taper hole
(5A) flow channel entry point (5B) is reclaimed with horizontal liquid, horizontal fluid injection runner exit (5A) and horizontal liquid reclaim flow channel entry point
(5B) curved slot arrangement of the section in broken line is, and horizontal fluid injection runner exit (5A) and horizontal liquid reclaim flow channel entry point
(5B) there is difference in height in vertical direction.
6. a kind of vertical recovery and gas sealing mechanism (2) for immersed photoetching machine according to claim 1, its feature
It is：Described submergence unit bottom end cover (2B) is integrally formed, the gentle sealing hole of the vertical gas-liquid recovery holes (6A) of bottom end cover
(6B) it is opened on integrally formed submergence unit bottom end cover (2B).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510423584.8A CN104965392B (en) | 2015-07-17 | 2015-07-17 | Vertical recycling and air sealing device for immersion type photoetching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510423584.8A CN104965392B (en) | 2015-07-17 | 2015-07-17 | Vertical recycling and air sealing device for immersion type photoetching machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104965392A CN104965392A (en) | 2015-10-07 |
| CN104965392B true CN104965392B (en) | 2017-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510423584.8A Active CN104965392B (en) | 2015-07-17 | 2015-07-17 | Vertical recycling and air sealing device for immersion type photoetching machine |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113138541B (en) * | 2020-01-17 | 2022-02-01 | 浙江启尔机电技术有限公司 | Immersion fluid is supplied with and is retrieved device with novel pump drainage chamber |
| US20240248411A1 (en) | 2021-04-15 | 2024-07-25 | Asml Netherlands B.V. | A fluid handling system, method and lithographic apparatus |
| CN113189849B (en) * | 2021-04-22 | 2023-08-11 | 中国科学院光电技术研究所 | Near-field photoetching immersion system, immersion unit and interface module thereof |
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| CN202886841U (en) * | 2012-10-22 | 2013-04-17 | 浙江大学 | Cascading-type self-adaption gas seal device for immersion-type photoetching machine |
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