CN104953025B - A kind of manufacture method of the magnetic orbit in memory, device and a kind of memory - Google Patents
A kind of manufacture method of the magnetic orbit in memory, device and a kind of memory Download PDFInfo
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- CN104953025B CN104953025B CN201410111552.XA CN201410111552A CN104953025B CN 104953025 B CN104953025 B CN 104953025B CN 201410111552 A CN201410111552 A CN 201410111552A CN 104953025 B CN104953025 B CN 104953025B
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- 230000015654 memory Effects 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000926 separation method Methods 0.000 claims abstract description 95
- 239000000696 magnetic material Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims description 97
- 238000005530 etching Methods 0.000 claims description 25
- 238000005498 polishing Methods 0.000 claims description 23
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 19
- 229910044991 metal oxide Inorganic materials 0.000 claims description 16
- 150000004706 metal oxides Chemical class 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 15
- 229910017052 cobalt Inorganic materials 0.000 claims description 11
- 239000010941 cobalt Substances 0.000 claims description 11
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 11
- 229910052742 iron Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 238000010586 diagram Methods 0.000 description 33
- 238000000151 deposition Methods 0.000 description 22
- 239000011148 porous material Substances 0.000 description 13
- 230000005381 magnetic domain Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000013049 sediment Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001376 precipitating effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000013500 data storage Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001568 sexual effect Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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Abstract
The embodiment of the invention discloses a kind of manufacture method of the magnetic orbit in memory, including multiple positive separation layers and multiple feminine gender separation layers are alternately stacked to produce stacked body；At least one hole is etched to the stacked body along stacking direction；Deposit two non-touching magnetic materials to form two concavo-convex magnetic orbits along the direction of the hole in the inner surface of the hole.Correspondingly, the embodiment of the invention also discloses a kind of manufacture device of the magnetic orbit in memory.Using the present invention, it is possible to achieve produce with concavo-convex and concavo-convex being evenly distributed and long and straight magnetic orbit, read-write precision is improved.
Description
Technical field
Manufacture method, dress the present invention relates to the magnetic orbit in technical field of semiconductors, more particularly to a kind of memory
Put and a kind of memory.
Background technology
Below Curie temperature, there are multiple magnetic domains in magnetic material inside, the interface between magnetic domain is referred to as neticdomain wall
（Magnetic Domain Wall）, under external magnetic field, magnetic domain will fitly arrange motion after reaching magnetic saturation state.Profit
Above-mentioned principle is used, by the way that to the magnetic orbit action current pulse in memory, its internal multiple magnetic domain will be along magnetic rail
Road arrangement motion, now, if read/write circuit is connected with magnetic orbit, just writable data are in magnetic domain or the reading from magnetic domain
Data, realize the data access function of memory.It is pointed out that in order to allow read/write circuit to read and write corresponding magnetic exactly
Farmland, it is desirable to which magnetic domain is pricked on fixed position surely when being read and write, wherein, can be by fixed magnetic with concavo-convex magnetic orbit
The mode of domain wall is realized determining bundle magnetic domain.
The currently manufactured technique with concavo-convex magnetic orbit is：To filling magnetic in a hole for inner surface concave-convex surface
The property material magnetic orbit concavo-convex to form a band.But, prior art cannot be not only thin but also long in the hole for ensureing to be made
While, it is ensured that its inner surface is in uniform concavo-convex.
The content of the invention
Embodiment of the present invention technical problem to be solved is, there is provided a kind of manufacturer of the magnetic orbit in memory
Method, device and a kind of memory, it is possible to achieve produce with concavo-convex and concavo-convex being evenly distributed and long and straight magnetic rail
Road, improves read-write precision.
Embodiment of the present invention first aspect provides a kind of manufacture method of the magnetic orbit in memory, including：
Multiple positive separation layers and multiple feminine gender separation layers are alternately stacked to produce stacked body；
At least one hole is etched to the stacked body along stacking direction；
Deposit two non-touching magnetic materials to form two along the direction of the hole in the inner surface of the hole
The concavo-convex magnetic orbit of bar, wherein, the positive separation layer and the negative separation layer have not for the magnetic material
Same deposition rate.
It is described that at least one is etched to the stacked body along stacking direction in the first possible implementation of first aspect
Individual hole, including：
Carry out non-selective etch to the stacked body to obtain at least one hole along stacking direction；Or
Carry out selective etch to the stacked body to obtain at least one hole along stacking direction.
It is described in institute in second possible implementation of first aspect with reference to the possibility implementation of first aspect
The inner surface for stating hole deposits two non-touching magnetic materials to form two concavo-convex magnetic along the direction of the hole
After property track, also include：
Isolated material is filled between two concavo-convex magnetic orbits；
Polish on surface to the stacked body where the aperture of wherein one end of the hole；
The surface after polishing covers one layer of isolated material.
With reference to second possible implementation of first aspect, in the third possible implementation of first aspect, institute
Stating isolated material includes the metal oxide being made up of any one or more element in iron, cobalt or nickel and metal oxidation
The mixture of thing.
With reference to the first possible implementation of first aspect or first aspect, the 4th kind in first aspect may realize
In mode, the inner surface in the hole deposits two non-touching magnetic materials to be formed along the direction of the hole
After two concavo-convex magnetic orbits, also include：
Two magnetic orbits are connected using the magnetic material form a U-shaped concavo-convex magnetic orbit.
Embodiment of the present invention second aspect provides a kind of manufacture device of the magnetic orbit in memory, including：
Stacked body produces module, for being alternately stacked to produce stacking by multiple positive separation layers and multiple feminine gender separation layers
Body；
Hole etch module, for etching at least one hole to the stacked body along stacking direction；
Magnetic orbit forms module, and depositing two along the direction of the hole for the inner surface in the hole does not connect mutually
Tactile magnetic material to form two concavo-convex magnetic orbits, wherein, the positive separation layer and the negative separation layer pin
There are different deposition rates to the magnetic material.
In the first possible implementation of second aspect, the hole etch module includes：
Selective etch unit, for carrying out non-selective etch to the stacked body to obtain at least one along stacking direction
Individual hole；Or
Non-selective etch unit, for carrying out selective etch to the stacked body to obtain at least one along stacking direction
Individual hole.
With reference to the possibility implementation of second aspect, in second possible implementation of second aspect, described device
Also include：
Isolated material fills module, for filling isolated material between two concavo-convex magnetic orbits；
Surface polishing module, the surface of the stacked body where for the aperture to the hole is polished；
Isolated material overlay module, one layer of isolated material is covered for the surface after polishing.
With reference to second possible implementation of second aspect, in the third possible implementation of second aspect, institute
Stating isolated material includes the metal oxide being made up of any one or more element in iron, cobalt or nickel and metal oxidation
The mixture of thing.
With reference to the first possible implementation of second aspect or second aspect, the 4th kind in second aspect may realize
In mode, described device also includes：
Magnetic orbit link block, a U is formed for connecting two magnetic orbits using the magnetic material
The concavo-convex magnetic orbit of type.
The embodiment of the present invention third aspect provides a kind of memory of carrying magnetic track, including：
Stacked body and at least one pair of concavo-convex magnetic orbit, wherein：
The stacked body is alternately stacked and is formed by multiple positive separation layers and multiple feminine gender separation layers, is had in the stacked body
At least one along stacking direction etch hole, the concavo-convex magnetic orbit by magnetic material the hole inner surface
Formed along the direction deposit of the hole, wherein, the positive separation layer and the negative separation layer are directed to the magnetic material
Material has different deposition rates.
In the first possible implementation of the third aspect, the memory also includes isolated material, the institute of a part
State isolated material to be filled between the pair of concavo-convex magnetic orbit, the isolated material of another part is covered in described
The surface of the stacked body where the aperture of wherein one end of hole.
It is the pair of in second possible implementation of the third aspect with reference to the possibility implementation of the third aspect
Concavo-convex magnetic orbit is connected U-shaped by the magnetic material.
With reference to the first possible implementation of the third aspect, in the third possible implementation of the third aspect, institute
Stating isolated material includes the metal oxide being made up of any one or more element in iron, cobalt or nickel and metal oxidation
The mixture of thing.
Implement the embodiment of the present invention, have the advantages that：The embodiment of the present invention is etched at least by stacked body
One hole, and then two non-touching concavo-convex magnetic orbits of formation are deposited in each hole, it is possible to achieve manufacture
Go out with concavo-convex and concavo-convex being evenly distributed and long and straight magnetic orbit, improve read-write precision.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the schematic flow sheet of the manufacture method of the magnetic orbit in a kind of memory provided in an embodiment of the present invention；
Fig. 2 is that the flow of the manufacture method of the magnetic orbit in another memory provided in an embodiment of the present invention is illustrated
Figure；
Fig. 3 is that the flow of the manufacture method of the magnetic orbit in another memory provided in an embodiment of the present invention is illustrated
Figure；
Fig. 4 is the structural representation of the manufacture device of the magnetic orbit in a kind of memory provided in an embodiment of the present invention；
Fig. 5 is the structural representation of the hole etch module in a kind of memory provided in an embodiment of the present invention；
Fig. 6 is a kind of structural representation of the memory of carrying magnetic track provided in an embodiment of the present invention；
Fig. 7 is a kind of structural representation of stacked body provided in an embodiment of the present invention；
Fig. 8 is the structural representation of the stacked body after a kind of etching provided in an embodiment of the present invention；
Fig. 9 is a kind of structural representation of hole provided in an embodiment of the present invention；
Figure 10 is a kind of schematic diagram that magnetic material is deposited to hole provided in an embodiment of the present invention；
Figure 11 is a kind of schematic diagram to pore filling isolated material provided in an embodiment of the present invention；
Figure 12 is a kind of schematic diagram on surface of being polished to stacked body provided in an embodiment of the present invention；
Figure 13 is a kind of schematic diagram that isolated material is covered to stacked body provided in an embodiment of the present invention；
Figure 14 is a kind of schematic diagram for connecting magnetic orbit provided in an embodiment of the present invention；
Figure 15 is a kind of structural representation of hole that another embodiment of the present invention is provided；
Figure 16 is a kind of schematic diagram that magnetic material is deposited to hole that another embodiment of the present invention is provided；
Figure 17 is a kind of schematic diagram to pore filling isolated material that another embodiment of the present invention is provided；
Figure 18 is a kind of schematic diagram on surface of being polished to stacked body that another embodiment of the present invention is provided；
Figure 19 is a kind of schematic diagram that isolated material is covered to stacked body that another embodiment of the present invention is provided；
Figure 20 is a kind of schematic diagram of connection magnetic orbit that another embodiment of the present invention is provided.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Magnetic orbit provided in an embodiment of the present invention is the core devices of memory, for data storage.In current impulse
Under effect, the magnetic domain in magnetic orbit（Under Curie temperature, there are multiple magnetic domains in all of magnetic material）Will be along rail
Road arrangement motion.In actual applications, magnetic orbit connects with read/write circuit, and read/write circuit writes data in magnetic domain or from magnetic
Data are read in farmland, data storage function is realized.
Fig. 1 is the schematic flow sheet of the manufacture method of the magnetic orbit in a kind of memory provided in an embodiment of the present invention.
The flow of the manufacture method of the magnetic orbit in the present embodiment can include as shown in the figure：
S101, multiple positive separation layers and multiple feminine gender separation layers are alternately stacked to produce stacked body.
The positive separation layer is the isolated substance with different deposition rates from the negative separation layer, and with phase
Deng floor height.
Specifically, multiple positive separation layers and multiple feminine gender separation layers are alternately stacked with the ordering of monoyang and monoyin,
It is combined into the stacked body of a stabilized structure.A kind of structural representation of the stacked body shown in Fig. 7 is referred to, wherein, darker regions are
Positive separation layer, light areas are negative separation layer.
S102, at least one hole is etched along stacking direction to the stacked body.
The stacking direction is as shown in Figure 7 perpendicular to the direction of separation layer.
Specifically, in the stacking direction, at least one hole is etched to the stacked body.Refer to the one kind shown in Fig. 8
The structural representation of the stacked body after etching, hole is as shown in the figure, it should be pointed out that hole is more, the magnetic being made below
Track is more, and amount of storage is bigger.
Wherein, the etching is peeled off by solution, reactive ion or other machinery mode and removes material for a kind of
Semiconductor fabrication process.The hole that the embodiment of the present invention is etched is used to make two magnetic orbits and fills other spacers
Matter, therefore be served only for making a hole for magnetic orbit more in the prior art, its bore is much greater, so as to bigbore
Under the conditions of, it is easier to etch cylindricality hole high and straight, it is to avoid etch the situation of funnel-form hole.
On the one hand, in the present embodiment, the mode of etching can be non-selective etch, i.e., do not distinguish the formation of stacked body
Material, etches the hole with flat interior surface, refers to a kind of structural representation of the hole shown in Fig. 9, and figure is to carry out
One of hole after non-selective etch.
On the other hand, in the present embodiment, the mode of etching can also be selective etch, that is, distinguish the formation of stacked body
Material, etches the hole of out-of-flatness inner surface, refers to the structural representation of another hole shown in Figure 15, and figure is to carry out
One of hole after non-selective etch.During implementing, optionally, the etching speed of the positive separation layer of stacked body
Rate is more than negative separation layer, and when being performed etching to stacked body using selective material, positive separation layer is than negative separation layer
Etch faster, therefore the part that positive separation layer is etched away is more more than negative separation layer, and then form out-of-flatness inner surface
Hole.
S103, two non-touching magnetic materials are deposited with shape in the inner surface of the hole along the direction of the hole
Into two concavo-convex magnetic orbits.
The deposit is a kind of manufacture craft for precipitating and gathering material.Specifically, hole inner surface along hole
Direction deposits out two non-touching magnetic materials, and the magnetic material is magnetic orbit, it is known that positive separation layer and feminine gender
Separation layer has different deposition rates, optionally, if the deposition rate of positive separation layer is more than negative separation layer, stays in sun
Magnetic material on sexual isolation layer more than negative separation layer, therefore will form two concavo-convex magnetic orbits.It may be noted that
It is that because the hole that the present embodiment is obtained is not funnel-form, therefore the magnetic orbit for depositing out is with uniform concavo-convex.
On the one hand, if hole is formed by non-selective etch, refer to one kind as shown in Figure 10 and formed sediment to hole
The schematic diagram of product magnetic material, the wall of left and right two invests the material as magnetic orbit of internal pore surface.
Optionally, after magnetic orbit is formed, magnetic orbit can also as follows be processed：First, it is concavo-convex at two
Magnetic orbit between fill isolated material, wherein, the isolated material can be but not limited to by any in iron, cobalt or nickel
The metal oxide of one or more element composition and the mixture of the metal oxide, refer to as shown in figure 11 one
Plant the schematic diagram to pore filling isolated material；2nd, the surface to the stacked body where the aperture of wherein one end of hole is carried out
Polishing, specifically, polishing off the magnetic material and isolated material on its surface, refers to the one kind shown in Figure 12 and gives stacked body polishing
The schematic diagram on surface；3rd, the surface after polishing covers one layer of isolated material, to play the work of isolation and protection
With refer to shown in Figure 13 a kind of gives stacked body covering isolated material.
On the other hand, if hole is formed by selective etch, a kind of deposit magnetic as shown in figure 16 is referred to
The schematic diagram of material, the wall of left and right two invests the material as magnetic orbit of internal pore surface.If it is pointed out that the positive every
The deposition rate of absciss layer is much larger than negative separation layer, then deposit magnetic material by the hole of out-of-flatness inner surface, will rise
The effect of the concavo-convex recess and the gap at convex place that are obtained to reduction deposit.
Optionally, after magnetic orbit is formed, magnetic orbit can also as follows be processed：First, it is concavo-convex at two
Magnetic orbit between fill isolated material, wherein, the isolated material can be but not limited to by any in iron, cobalt or nickel
The metal oxide of one or more element composition and the mixture of the metal oxide, refer to as shown in figure 17 one
Plant the schematic diagram to pore filling isolated material；2nd, the surface to the stacked body where the aperture of wherein one end of hole is carried out
Polishing, specifically, polishing off the magnetic material and isolated material on its surface, refers to the one kind shown in Figure 18 and gives stacked body polishing
The schematic diagram on surface；3rd, the surface after polishing covers one layer of isolated material, to play the work of isolation and protection
With, refer to shown in Figure 19 it is a kind of to stacked body cover isolated material schematic diagram.
The embodiment of the present invention forms two by etching at least one hole on stacked body, and then being deposited in each hole
The non-touching concavo-convex magnetic orbit of bar, it is possible to achieve produce with concavo-convex and concavo-convex being evenly distributed and long and straight
Magnetic orbit, improve read-write precision.
Fig. 2 is that the flow of the manufacture method of the magnetic orbit in another memory provided in an embodiment of the present invention is illustrated
Figure, can include：
S201, multiple positive separation layers and multiple feminine gender separation layers are alternately stacked to produce stacked body.
The positive separation layer is the isolated substance with different deposition rates from the negative separation layer, and with phase
Deng floor height.
Specifically, multiple positive separation layers and multiple feminine gender separation layers are alternately stacked with the ordering of monoyang and monoyin,
It is combined into the stacked body of a stabilized structure.A kind of structural representation of the stacked body shown in Fig. 7 is referred to, wherein, darker regions are
Positive separation layer, light areas are negative separation layer.
S202, carries out non-selective etch to the stacked body to obtain at least one hole along stacking direction.
The stacking direction is as shown in Figure 7 perpendicular to the direction of separation layer.
Specifically, in the stacking direction, at least one hole is etched to the stacked body.Refer to the one kind shown in Fig. 8
The structural representation of the stacked body after etching, hole is as shown in the figure, it should be pointed out that hole is more, the magnetic being made below
Track is more, and amount of storage is bigger.
Wherein, the etching is peeled off by solution, reactive ion or other machinery mode and removes material for a kind of
Semiconductor fabrication process.The hole that the embodiment of the present invention is etched is used to make two magnetic orbits and fills other spacers
Matter, therefore be served only for making a hole for magnetic orbit more in the prior art, its bore is much greater, so as to bigbore
Under the conditions of, it is easier to etch cylindricality hole high and straight, it is to avoid etch the situation of funnel-form hole.
Particularly, in the present embodiment, the mode of etching is non-selective etch, i.e., do not distinguish the formation material of stacked body
Material, etches the hole with flat interior surface, refers to a kind of structural representation of the hole shown in Fig. 9, figure be carry out it is non-
One of hole after selective etch.
S203, two non-touching magnetic materials are deposited with shape in the inner surface of the hole along the direction of the hole
Into two concavo-convex magnetic orbits.
The deposit is a kind of manufacture craft for precipitating and gathering material.Specifically, hole inner surface along hole
Direction deposits out two non-touching magnetic materials, and the magnetic material is magnetic orbit, it is known that positive separation layer and feminine gender
Separation layer has different deposition rates, optionally, if the deposition rate of positive separation layer is more than negative separation layer, stays in sun
Magnetic material on sexual isolation layer more than negative separation layer, therefore will form two concavo-convex magnetic orbits.It may be noted that
It is that because the hole that the present embodiment is obtained is not funnel-form, therefore the magnetic orbit for depositing out is with uniform concavo-convex.Please join
A kind of schematic diagram that magnetic material is deposited to hole as shown in Figure 10 is read, the material that the wall of left and right two invests internal pore surface is
Magnetic orbit.
S204, isolated material is filled between two concavo-convex magnetic orbits.
The isolated material can be but not limited to the metal being made up of any one or more element in iron, cobalt or nickel
The mixture of oxide and the metal oxide.Specifically, refer to one kind as shown in figure 11 isolating to pore filling
The schematic diagram of material, isolated material is filled between two concavo-convex magnetic orbits.
Polish on S205, the surface to the stacked body where the aperture of wherein one end of the hole.
Specifically, referring to a kind of schematic diagram on the surface of being polished to stacked body shown in Figure 12, hole is polished off wherein
The magnetic material and isolated material on the surface of the stacked body where the aperture of one end.Wherein, wherein one end of the hole is figure
The upward one end in 12 mesopores.
S206, the surface after polishing covers one layer of isolated material.
Specifically, referring to a kind of schematic diagram that isolated material is covered to stacked body shown in Figure 13, the table after polishing
Face covers one layer of isolated material, to play protection and buffer action.Wherein, the isolated material can be filled out forward direction hole therewith
The isolated material for filling is identical.
S207, connects two magnetic orbits and forms a U-shaped concavo-convex magnetic using the magnetic material
Track.
Specifically, referring to a kind of schematic diagram of the connection magnetic orbit shown in Figure 14, two are connected using magnetic material
The two ends of magnetic orbit are forming a U-shaped concavo-convex magnetic orbit.It is pointed out that the magnetic in conventional memory
Property track there are two kinds of designs, a kind of is two concavo-convex magnetic orbits arranged side by side, and another kind is one U-shaped concavo-convex
Shape magnetic orbit, the embodiment of the present invention can be made into the latter.
The embodiment of the present invention is formed sediment by the hole of non-selective etch at least one on stacked body in each hole
Product forms two non-touching concavo-convex magnetic orbits, further, two magnetic orbits is connected using magnetic material, can
To realize producing with concavo-convex and concavo-convex being evenly distributed and long and straight U-shaped magnetic orbit, read-write precision is improved.
Fig. 3 is that the flow of the manufacture method of the magnetic orbit in another memory provided in an embodiment of the present invention is illustrated
Figure, can include step S301~S307, step S201~207 that its particular content can be in analogy Fig. 2, therefore no longer go to live in the household of one's in-laws on getting married here
State.
It is pointed out that both difference be etch mode, the embodiment of the present invention use selective etch with
Form the hole of inner surface out-of-flatness（Positive separation layer than negative separation layer etching faster, therefore positive separation layer is etched
The part fallen is more more than negative separation layer）, thus during magnetic material is deposited, if the deposition rate of positive separation layer
Much larger than negative separation layer, then deposit magnetic material by the hole of out-of-flatness inner surface, reduction deposit will be played and obtained
Concavo-convex recess（At negative separation layer deposit）With convex place（At positive separation layer deposit）Gap effect.
In addition, specific distinctive points see the one kind shown in a kind of structural representation of the hole shown in Figure 15, Figure 16
Shown in schematic diagram from a kind of shown in the hole deposit schematic diagram of magnetic material, Figure 17 to pore filling isolated material, Figure 18 to
A kind of a kind of schematic diagram to shown in the stacked body polishing schematic diagram on surface, Figure 19 to stacked body covering isolated material and
A kind of schematic diagram of the connection magnetic orbit shown in Figure 20.
The embodiment of the present invention is deposited by the hole of selective etch at least one on stacked body in each hole
Two non-touching concavo-convex magnetic orbits are formed, further, two magnetic orbits is connected using magnetic material, can be with
Realization is produced with concavo-convex and concavo-convex being evenly distributed and long and straight U-shaped magnetic orbit, improves read-write precision.
Fig. 4 is a kind of structural representation of the manufacture device of the magnetic orbit in memory in the embodiment of the present invention.As schemed
The manufacture device of the magnetic orbit in the shown embodiment of the present invention at least can produce module 410, hole etching including stacked body
Module 420 and magnetic orbit form module 430, wherein：
Stacked body produces module 410, for being alternately stacked to produce by multiple positive separation layers and multiple feminine gender separation layers
Stacked body.
The positive separation layer is the isolated substance with different deposition rates from the negative separation layer, and with phase
Deng floor height.
Specifically, stacked body produces module 410 by multiple positive separation layers and multiple feminine gender separation layers with monoyang and monoyin
Ordering is alternately stacked, and is combined into the stacked body of a stabilized structure.Refer to a kind of structural representation of the stacked body shown in Fig. 7
Figure, wherein, darker regions are positive separation layer, and light areas are negative separation layer.
Hole etch module 420, for etching at least one hole to the stacked body along stacking direction.Implement
In, the hole etch module 420 can be further included as shown in Figure 5：Selective etch unit 421 and non-selective etch
Unit 422, wherein：
Selective etch unit 421, for non-selective etch is carried out to the stacked body along stacking direction with obtain to
A few hole.
The stacking direction is as shown in Figure 7 perpendicular to the direction of separation layer.
Specifically, selective etch unit 421 is in the stacking direction, at least one hole is etched to the stacked body.Please
Refering to the structural representation of the stacked body after a kind of etching shown in Fig. 8, hole is as shown in the figure, it should be pointed out that hole is got over
Many, the magnetic orbit being made below is more, and amount of storage is bigger.
Wherein, the etching is peeled off by solution, reactive ion or other machinery mode and removes material for a kind of
Semiconductor fabrication process.The hole that the embodiment of the present invention is etched is used to make two magnetic orbits and fills other spacers
Matter, therefore be served only for making a hole for magnetic orbit more in the prior art, its bore is much greater, so as to bigbore
Under the conditions of, it is easier to etch cylindricality hole high and straight, it is to avoid etch the situation of funnel-form hole.
Particularly, the mode of the etching of selective etch unit 421 is non-selective etch, i.e., do not distinguish the formation of stacked body
Material, etches the hole with flat interior surface, refers to a kind of structural representation of the hole shown in Fig. 9, and figure is to carry out
One of hole after non-selective etch.
Non-selective etch unit 422, for selective etch is carried out to the stacked body along stacking direction with obtain to
A few hole.
Specifically, the etching mode that non-selective etch unit 422 is performed is identical with selective etch unit 421, here
Repeat no more.It is pointed out that the mode of the etching of non-selective etch unit 422 is selective etch, that is, distinguish stacked body
Formation material, etch the hole of out-of-flatness inner surface, refer to the structural representation of another hole shown in Figure 15, scheme
To carry out the one of hole after non-selective etch.During implementing, optionally, the positive separation layer of stacked body
Etch rate is more than negative separation layer, when being performed etching to stacked body using selective material, positive separation layer than it is negative every
Faster, therefore the part that positive separation layer is etched away is more more than negative separation layer for the etching of absciss layer, and then forms out-of-flatness
The hole of inner surface.
Magnetic orbit forms module 430, and two are deposited mutually along the direction of the hole for the inner surface in the hole
Discontiguous magnetic material is forming two concavo-convex magnetic orbits.
The deposit is a kind of manufacture craft for precipitating and gathering material.Specifically, magnetic orbit forms module 430 in hole
The inner surface of gap deposits out two non-touching magnetic materials along the direction of hole, and the magnetic material is magnetic orbit,
Know that positive separation layer and negative separation layer have different deposition rates, optionally, if the deposition rate of positive separation layer is more than
Negative separation layer, then the magnetic material stayed on positive separation layer will more than negative separation layer, therefore formed two it is concavo-convex
Magnetic orbit.It is pointed out that because the hole that the present embodiment is obtained not is funnel-form, therefore the magnetic orbit tool for depositing out
Have uniform concavo-convex.
On the one hand, if hole is formed by non-selective etch, refer to one kind as shown in Figure 10 and formed sediment to hole
The schematic diagram of product magnetic material, the wall of left and right two invests the material as magnetic orbit of internal pore surface.
On the other hand, if hole is formed by selective etch, refer to one kind as shown in figure 16 and formed sediment to hole
The schematic diagram of product magnetic material, the wall of left and right two invests the material as magnetic orbit of internal pore surface.If it is pointed out that
The deposition rate of positive separation layer is much larger than negative separation layer, then magnetic material is deposited by the hole of out-of-flatness inner surface
Material, will play a part of to reduce the gap for depositing the concavo-convex recess and convex place for obtaining.
Optionally, Fig. 4 is referred to, the manufacture device of the magnetic orbit in the embodiment of the present invention can also include as shown in the figure
Isolated material filling module 440, surface polishing module 450, isolated material overlay module 460 and magnetic orbit link block
470, wherein：
Isolated material fills module 440, for filling isolated material between two concavo-convex magnetic orbits.
The isolated material can be but not limited to the metal being made up of any one or more element in iron, cobalt or nickel
The mixture of oxide and the metal oxide.Specifically, refer to as shown in Figure 11 or Figure 17 to pore filling every
From the schematic diagram of material, isolated material filling module 440 fills isolated material between two concavo-convex magnetic orbits.
Surface polishing module 450, the surface of the stacked body where for the aperture to the hole is polished.
Specifically, the schematic diagram on the surface of being polished to stacked body shown in Figure 12 or Figure 18 is referred to, surface polishing module 450
The magnetic material and isolated material on the surface of the stacked body where the aperture of the wherein one end for polishing off hole.Wherein, the hole
Wherein one end of gap is the upward one end in Figure 12 or Figure 18 mesopores.
Isolated material overlay module 460, one layer of isolated material is covered for the surface after polishing.
Specifically, referring to the schematic diagram that isolated material is covered to stacked body shown in Figure 13 or Figure 19, isolated material covers
Surface of the cover module 460 after polishing covers one layer of isolated material, to play protection and buffer action.Wherein, the isolation
Material can forward direction pore filling therewith isolated material it is identical.
Magnetic orbit link block 470, one is formed for connecting two magnetic orbits using the magnetic material
The U-shaped concavo-convex magnetic orbit of bar.
Specifically, referring to the schematic diagram of the connection magnetic orbit shown in Figure 14 or Figure 20, magnetic orbit link block 470
The two ends for connecting two magnetic orbits using magnetic material form a U-shaped concavo-convex magnetic orbit.It may be noted that
It is that the magnetic orbit in conventional memory has two kinds of designs, and a kind of is two concavo-convex magnetic orbits arranged side by side,
Another kind is a U-shaped concavo-convex magnetic orbit, and the former can be processed into the latter by this module.
Fig. 6 is a kind of structural representation of the memory of carrying magnetic track provided in an embodiment of the present invention, as shown in the figure originally
The memory 500 of the carrying magnetic track in inventive embodiments includes stacked body 510 and at least one pair of concavo-convex magnetic orbit
520, wherein：
Stacked body 510 is alternately stacked and is formed by multiple positive separation layers 511 and multiple feminine gender separation layers 512, stacked body 510
In have at least one hole etched along stacking direction, concavo-convex magnetic orbit 520 by magnetic material hole inner surface
Formed along the direction deposit of the hole, wherein, positive separation layer 511 and negative separation layer 512 are directed to the magnetic material
With different deposition rates.
Optionally, memory 500 also includes isolated material 530, and the isolated material 530 is filled in the pair of concavo-convex
Magnetic orbit between.It is pointed out that the hole that etches of the embodiment of the present invention be used to making two magnetic orbits 520 and
Other isolated substances 530 are filled, therefore is served only for making a hole for magnetic orbit more in the prior art, its bore big will be obtained
It is many, so as under the conditions of bigbore, it is easier to etch cylindricality hole high and straight, it is to avoid etch funnel-form hole
Situation, is not funnel-form due to hole further, and the magnetic orbit for depositing out has uniform concavo-convex.
It is another optional, Figure 13 is referred to, the surface of the stacked body 500 where the aperture of wherein one end of hole is coated with it
His isolated material, to play a part of to isolate and protect.It is pointed out that the isolated material（Including isolated material
530）The metal oxide and the gold being made up of any one or more element in iron, cobalt or nickel can be but not limited to
Category hopcalite.
In addition, the magnetic orbit in conventional memory has two kinds of designs, a kind of is that arranged side by side two are concavo-convex
Magnetic orbit, another kind is a U-shaped concavo-convex magnetic orbit.Optionally, Figure 14 is referred to, one in the embodiment of the present invention
U-shaped can also be connected by magnetic material to concavo-convex magnetic orbit 520.
Need to know, above-mentioned Fig. 6, Figure 13 and Figure 14 are the one of which form of expression of the embodiment of the present invention, and
Another form of expression of the not limited to this form of expression, such as Figure 18, Figure 19 and Figure 20 falls within embodiment of the present invention protection
Scope.
The embodiment of the present invention forms two by etching at least one hole on stacked body, and then being deposited in each hole
The non-touching concavo-convex magnetic orbit of bar, it is possible to achieve produce with concavo-convex and concavo-convex being evenly distributed and long and straight
Magnetic orbit, improve read-write precision.
One of ordinary skill in the art will appreciate that all or part of flow in realizing above-described embodiment method, can be
The hardware of correlation is instructed to complete by computer program, described program can be stored in a computer read/write memory medium
In, the program is upon execution, it may include such as the flow of the embodiment of above-mentioned each method.Wherein, described storage medium can be magnetic
Dish, CD, read-only memory（Read-Only Memory, ROM）Or random access memory（Random Access
Memory, RAM）Deng.
Above disclosed is only present pre-ferred embodiments, can not limit the right model of the present invention with this certainly
Enclose, therefore the equivalent variations made according to the claims in the present invention, still belong to the scope that the present invention is covered.
Claims (14)
1. the manufacture method of the magnetic orbit in a kind of memory, it is characterised in that methods described includes：
Multiple positive separation layers and multiple feminine gender separation layers are alternately stacked to produce stacked body；
At least one hole is etched to the stacked body along stacking direction；
Two non-touching magnetic materials to be deposited along the direction of the hole recessed to form two in the inner surface of the hole
The magnetic orbit of convex, wherein, the positive separation layer and the negative separation layer have different for the magnetic material
Deposition rate.
2. the method for claim 1, it is characterised in that it is described along stacking direction to stacked body etching at least one
Hole, including：
Carry out non-selective etch to the stacked body to obtain at least one hole along stacking direction；Or
Carry out selective etch to the stacked body to obtain at least one hole along stacking direction.
3. the method for claim 1, it is characterised in that the inner surface in the hole along the hole direction
Two non-touching magnetic materials of deposit are after forming two concavo-convex magnetic orbits, also including：
Isolated material is filled between two concavo-convex magnetic orbits；
Polish on surface to the stacked body where the aperture of wherein one end of the hole；
The surface after polishing covers one layer of isolated material.
4. method as claimed in claim 3, it is characterised in that the isolated material include by iron, cobalt or nickel any one
Or the metal oxide and the mixture of the metal oxide of multiple element composition.
5. the method as described in claim any one of 1-2, it is characterised in that the inner surface in the hole is along the hole
The direction of gap deposits two non-touching magnetic materials after forming two concavo-convex magnetic orbits, also to include：
Two concavo-convex magnetic orbits are connected using the magnetic material form a U-shaped concavo-convex magnetic rail
Road.
6. the manufacture device of the magnetic orbit in a kind of memory, it is characterised in that described device includes：
Stacked body produces module, for being alternately stacked to produce stacked body by multiple positive separation layers and multiple feminine gender separation layers；
Hole etch module, for etching at least one hole to the stacked body along stacking direction；
Magnetic orbit forms module, non-touching along the direction deposit two of the hole for the inner surface in the hole
Magnetic material to form two concavo-convex magnetic orbits, wherein, the positive separation layer and the negative separation layer are directed to institute
Stating magnetic material has different deposition rates.
7. device as claimed in claim 6, it is characterised in that the hole etch module includes：
Selective etch unit, for carrying out non-selective etch to the stacked body to obtain at least one hole along stacking direction
Gap；Or
Non-selective etch unit, for carrying out selective etch to the stacked body to obtain at least one hole along stacking direction
Gap.
8. device as claimed in claim 6, it is characterised in that described device also includes：
Isolated material fills module, for filling isolated material between two concavo-convex magnetic orbits；
Surface polishing module, the surface of the stacked body where for the aperture to the hole is polished；
Isolated material overlay module, one layer of isolated material is covered for the surface after polishing.
9. device as claimed in claim 8, it is characterised in that the isolated material include by iron, cobalt or nickel any one
Or the metal oxide and the mixture of the metal oxide of multiple element composition.
10. the device as described in claim any one of 8-9, it is characterised in that described device also includes：
Magnetic orbit link block, one is formed for connecting two concavo-convex magnetic orbits using the magnetic material
The U-shaped concavo-convex magnetic orbit of bar.
11. a kind of memories of carrying magnetic track, it is characterised in that the memory includes that stacked body is concavo-convex with least one pair of
Magnetic orbit, wherein：
The stacked body is alternately stacked and is formed by multiple positive separation layers and multiple feminine gender separation layers, is had at least in the stacked body
One along stacking direction etch hole, the concavo-convex magnetic orbit by magnetic material the hole inner surface along institute
State the direction deposit of hole and formed, wherein, the positive separation layer and the negative separation layer have for the magnetic material
There are different deposition rates.
12. memories as claimed in claim 11, it is characterised in that the memory also includes isolated material, a part of
The isolated material is filled between the pair of concavo-convex magnetic orbit, and the isolated material of another part is covered in institute
The surface of the stacked body where the aperture of the wherein one end for stating hole.
13. memories as claimed in claim 11, it is characterised in that the pair of concavo-convex magnetic orbit passes through the magnetic
Property material is connected U-shaped.
14. memories as claimed in claim 12, it is characterised in that the isolated material is included by any in iron, cobalt or nickel
The metal oxide of one or more element composition and the mixture of the metal oxide.
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| CN201410111552.XA CN104953025B (en) | 2014-03-24 | 2014-03-24 | A kind of manufacture method of the magnetic orbit in memory, device and a kind of memory |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373477A (en) * | 2001-01-16 | 2002-10-09 | 佳能株式会社 | Method for annealing magnetic domain wall moving type magnetooptic disc, and magnetooptical disc |
| CN1691200A (en) * | 2004-02-25 | 2005-11-02 | 国际商业机器公司 | Method of fabricating data tracks for use in a magnetic shift register memory device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005251369A (en) * | 2004-02-02 | 2005-09-15 | Canon Inc | Magnetooptical recording medium |
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2014
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373477A (en) * | 2001-01-16 | 2002-10-09 | 佳能株式会社 | Method for annealing magnetic domain wall moving type magnetooptic disc, and magnetooptical disc |
| CN1691200A (en) * | 2004-02-25 | 2005-11-02 | 国际商业机器公司 | Method of fabricating data tracks for use in a magnetic shift register memory device |
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