CN104953025A - Manufacturing method and manufacturing device for magnetic tracks in memory, and memory - Google Patents
Manufacturing method and manufacturing device for magnetic tracks in memory, and memory Download PDFInfo
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- CN104953025A CN104953025A CN201410111552.XA CN201410111552A CN104953025A CN 104953025 A CN104953025 A CN 104953025A CN 201410111552 A CN201410111552 A CN 201410111552A CN 104953025 A CN104953025 A CN 104953025A
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Abstract
The embodiment of the invention discloses a manufacturing method for magnetic tracks in a memory. The manufacturing method comprises the following steps: alternately stacking a plurality of positive isolation layers and a plurality of negative isolation layers to prepare a stacked body; etching at least one pore on the stacked body along a stacking direction; depositing two non-contact magnetic materials on the inner surface of the pore along the direction of the pore to form two concave-convex magnetic tracks. Correspondingly, the embodiment of the invention further discloses a manufacturing device for magnetic tracks in a memory. With the adoption of the manufacturing method and the manufacturing device disclosed by the invention, manufacturing for the long and straight magnetic tracks in the shape of concaves and convexes which are uniformly distributed can be realized, and the reading-writing accuracy can be improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the manufacture method of the magnetic orbit in a kind of memory, device and a kind of memory.
Background technology
Below Curie temperature, there is multiple magnetic domain in magnetic material inside, and the interface between magnetic domain is called neticdomain wall (Magnetic Domain Wall), under outside magnetic field effect, fitly will arrange motion after magnetic domain reaches magnetic saturation state.Utilize above-mentioned principle, by to the magnetic orbit action current pulse in memory, multiple magnetic domains of its inside will be moved along magnetic orbit arrangement, now, if read/write circuit is connected with magnetic orbit, just can write data in magnetic domain or from magnetic domain and read data, realize the data access function of memory.It is pointed out that to allow read/write circuit read and write corresponding magnetic domain exactly, requiring that magnetic domain is surely being pricked during read-write on fixing position, wherein, can realize determining bundle magnetic domain by the mode of fixing neticdomain wall with concavo-convex magnetic orbit.
The technique of the magnetic orbit that current fabricated ribbon is concavo-convex is: in the hole of an inner surface concave-convex surface, fill magnetic material to be formed the concavo-convex magnetic orbit of a band.But prior art while ensureing that the hole that make is not only thin but also long, cannot also ensure that its inner surface is in concavo-convex uniformly.
Summary of the invention
Embodiment of the present invention technical problem to be solved is, the manufacture method of the magnetic orbit in a kind of memory, device and a kind of memory are provided, can realize producing and be with concavo-convex and concavo-convex that be evenly distributed and long and straight magnetic orbit, improve read-write precision.
Embodiment of the present invention first aspect provides the manufacture method of the magnetic orbit in a kind of memory, comprising:
Multiple positive separator and multiple negative separator are replaced stacking to produce stacked body;
Along stacking direction, at least one hole is etched to described stacked body;
At the inner surface of described hole along direction deposit two non-touching magnetic materials of described hole to form two concavo-convex magnetic orbits, wherein, described positive separator and described negative separator have different deposition rates for described magnetic material.
May in implementation in the first of first aspect, describedly along stacking direction, at least one hole is etched to described stacked body, comprising:
Along stacking direction, non-selective etch is carried out to obtain at least one hole to described stacked body; Or
Along stacking direction, selective etch is carried out to obtain at least one hole to described stacked body.
In conjunction with the possible implementation of first aspect, in the second possibility implementation of first aspect, the described inner surface at described hole, also comprises along direction deposit two non-touching magnetic materials of described hole with after forming two concavo-convex magnetic orbits:
Isolated material is filled between described two concavo-convex magnetic orbits;
Polished in the surface of the described stacked body at the place, aperture of wherein one end of described hole;
Isolated material described in described surface coverage one deck after polishing.
In conjunction with the second possibility implementation of first aspect, in the third possibility implementation of first aspect, described isolated material comprises the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel.
May implementation in conjunction with the first of first aspect or first aspect, in the 4th kind of possibility implementation of first aspect, the described inner surface at described hole, also comprises along direction deposit two non-touching magnetic materials of described hole with after forming two concavo-convex magnetic orbits:
Described magnetic material is used to connect described two magnetic orbits to form a U-shaped concavo-convex magnetic orbit.
Embodiment of the present invention second aspect provides the manufacturing installation of the magnetic orbit in a kind of memory, comprising:
Stacked body produces module, for replacing stacking to produce stacked body by multiple positive separator and multiple negative separator;
Hole etch module, for etching at least one hole along stacking direction to described stacked body;
Magnetic orbit forms module, for the inner surface at described hole along direction deposit two non-touching magnetic materials of described hole to form two concavo-convex magnetic orbits, wherein, described positive separator and described negative separator have different deposition rates for described magnetic material.
In the first possibility implementation of second aspect, described hole etch module comprises:
Selective etch unit, for carrying out non-selective etch to obtain at least one hole along stacking direction to described stacked body; Or
Non-selective etch unit, for carrying out selective etch to obtain at least one hole along stacking direction to described stacked body.
In conjunction with the possible implementation of second aspect, in the second possibility implementation of second aspect, described device also comprises:
Isolated material packing module, for filling isolated material between described two concavo-convex magnetic orbits;
Surface finish module, polish in the surface for the described stacked body at the place, aperture to described hole;
Isolated material overlay module, for isolated material described in the described surface coverage one deck after polishing.
In conjunction with the second possibility implementation of second aspect, in the third possibility implementation of second aspect, described isolated material comprises the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel.
May implementation in conjunction with the first of second aspect or second aspect, may in implementation at the 4th kind of second aspect, described device also comprises:
Magnetic orbit link block, connects described two magnetic orbits to form a U-shaped concavo-convex magnetic orbit for using described magnetic material.
The embodiment of the present invention third aspect provides a kind of memory of carrying magnetic track, comprising:
Stacked body and at least one pair of concavo-convex magnetic orbit, wherein:
Described stacked body replaces stacking forming by multiple positive separator and multiple negative separator, at least one is had along the hole of stacking direction etching in described stacked body, described concavo-convex magnetic orbit by magnetic material described hole inner surface along described hole direction deposit and formed, wherein, described positive separator and described negative separator have different deposition rates for described magnetic material.
In the first possibility implementation of the third aspect, described memory also comprises isolated material, the described isolated material of a part is filled between described a pair concavo-convex magnetic orbit, and the described isolated material of another part covers the surface of the described stacked body at the place, aperture of wherein one end of described hole.
In conjunction with the possible implementation of the third aspect, may in implementation at the second of the third aspect, described a pair concavo-convex magnetic orbit is connected U-shaped by described magnetic material.
In conjunction with the first possibility implementation of the third aspect, in the third possibility implementation of the third aspect, described isolated material comprises the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel.
Implement the embodiment of the present invention, there is following beneficial effect: the embodiment of the present invention by etching at least one hole on stacked body, and then deposit forms two non-touching concavo-convex magnetic orbits in each hole, can realize producing and be with concavo-convex and concavo-convex that be evenly distributed and long and straight magnetic orbit, improve read-write precision.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic flow sheet of the manufacture method of magnetic orbit in a kind of memory of providing of the embodiment of the present invention;
Fig. 2 is the schematic flow sheet of the manufacture method of magnetic orbit in the another kind of memory that provides of the embodiment of the present invention;
Fig. 3 is the schematic flow sheet of the manufacture method of magnetic orbit in another memory of providing of the embodiment of the present invention;
Fig. 4 is the structural representation of the manufacturing installation of magnetic orbit in a kind of memory of providing of the embodiment of the present invention;
Fig. 5 is the structural representation of the hole etch module in a kind of memory of providing of the embodiment of the present invention;
Fig. 6 is the structural representation of the memory of a kind of carrying magnetic track that the embodiment of the present invention provides;
Fig. 7 is the structural representation of a kind of stacked body that the embodiment of the present invention provides;
Fig. 8 is the structural representation of stacked body after a kind of etching of providing of the embodiment of the present invention;
Fig. 9 is the structural representation of a kind of hole that the embodiment of the present invention provides;
Figure 10 is a kind of schematic diagram to hole deposit magnetic material that the embodiment of the present invention provides;
Figure 11 is a kind of schematic diagram to pore filling isolated material that the embodiment of the present invention provides;
Figure 12 is a kind of schematic diagram surperficial to stacked body polishing that the embodiment of the present invention provides;
Figure 13 is a kind of schematic diagram covering isolated material to stacked body that the embodiment of the present invention provides;
Figure 14 is a kind of schematic diagram connecting magnetic orbit that the embodiment of the present invention provides;
Figure 15 is the structural representation of a kind of hole that another embodiment of the present invention provides;
Figure 16 is a kind of schematic diagram to hole deposit magnetic material that another embodiment of the present invention provides;
Figure 17 is a kind of schematic diagram to pore filling isolated material that another embodiment of the present invention provides;
Figure 18 is a kind of schematic diagram surperficial to stacked body polishing that another embodiment of the present invention provides;
Figure 19 is a kind of schematic diagram covering isolated material to stacked body that another embodiment of the present invention provides;
Figure 20 is a kind of schematic diagram connecting magnetic orbit that another embodiment of the present invention provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The magnetic orbit that the embodiment of the present invention provides is the core devices of memory, for storing data.Under current impulse effect, the magnetic domain (under Curie temperature, all there is multiple magnetic domain in all magnetic materials) in magnetic orbit will be moved along track arrangement.In actual applications, magnetic orbit connects with read/write circuit, and read/write circuit writes data in magnetic domain or from magnetic domain and reads data, realizes data storage function.
Fig. 1 is the schematic flow sheet of the manufacture method of magnetic orbit in a kind of memory of providing of the embodiment of the present invention.The flow process of the manufacture method of the magnetic orbit as shown in the figure in the present embodiment can comprise:
S101, replaces stacking to produce stacked body by multiple positive separator and multiple negative separator.
Described positive separator is the isolated substance with different deposition rates from described negative separator, and has equal floor height.
Concrete, by multiple positive separator and multiple negative separator alternately stacking with the ordering of monoyang and monoyin, be combined into the stacked body of a stabilized structure.Refer to the structural representation of a kind of stacked body shown in Fig. 7, wherein, darker regions is positive separator, and light areas is negative separator.
S102, etches at least one hole along stacking direction to described stacked body.
Described stacking direction is as shown in Figure 7 perpendicular to the direction of separator.
Concrete, in the stacking direction, at least one hole is etched to described stacked body.Refer to the structural representation of the stacked body after a kind of etching shown in Fig. 8, hole as shown in the figure, it is pointed out that hole is more, and the magnetic orbit made below is more, and memory space is larger.
Wherein, described etching is a kind of semiconductor fabrication process being peeled off and removed material by solution, reactive ion or other mechanical system.The hole that the embodiment of the present invention etches is for making two magnetic orbits and filling other isolated substance, therefore compared with in prior art only for making the hole of a magnetic orbit, its bore is much bigger, thus under bigbore condition, more easily etch height and straight cylindricality hole, avoid the situation etching funnel-form hole.
On the one hand, in the present embodiment, the mode of etching can be non-selective etch, namely the formation material of stacked body is not distinguished, etch the hole with flat interior surface, refer to the structural representation of a kind of hole shown in Fig. 9, figure is one of them hole after carrying out non-selective etch.
On the other hand, in the present embodiment, the mode of etching can also be selective etch, namely the formation material of stacked body is distinguished, etch the hole of out-of-flatness inner surface, refer to the structural representation of the another kind of hole shown in Figure 15, figure is one of them hole after carrying out non-selective etch.In specific implementation process, optionally, the etch rate of the positive separator of stacked body is greater than negative separator, when using selective material to etch stacked body, positive separator is faster than the etching of negative separator, therefore more than negative separator of the part that is etched away of positive separator, and then form the hole of out-of-flatness inner surface.
S103, at the inner surface of described hole along direction deposit two non-touching magnetic materials of described hole to form two concavo-convex magnetic orbits.
Described deposit is a kind ofly precipitate and gather the manufacture craft of material.Concrete, two non-touching magnetic materials are gone out along the direction deposit of hole at the inner surface of hole, this magnetic material is magnetic orbit, known positive separator and negative separator have different deposition rates, optionally, if the deposition rate of positive separator is greater than negative separator, then the magnetic material stayed on positive separator will more than negative separator, the magnetic orbit that therefore formation two is concavo-convex.It is pointed out that the hole due to the present embodiment acquisition is not funnel-form, the magnetic orbit that therefore deposit goes out has concavo-convex uniformly.
On the one hand, if hole is formed by non-selective etch, then refer to a kind of schematic diagram to hole deposit magnetic material as shown in Figure 10, the material that left and right two wall invests internal pore surface is magnetic orbit.
Optionally, after formation magnetic orbit, can also process as follows magnetic orbit: one, between two concavo-convex magnetic orbits, fill isolated material, wherein, described isolated material can be but be not limited to the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel, refers to a kind of schematic diagram to pore filling isolated material as shown in figure 11; Two, polished in the surface of the stacked body at the place, aperture of wherein one end of hole, concrete, polish off magnetic material and the isolated material on its surface, refer to a kind of schematic diagram surperficial to stacked body polishing shown in Figure 12; Three, isolated material described in the described surface coverage one deck after polishing, to play the effect of isolation and protection, refers to the one shown in Figure 13 and covers isolated material to stacked body.
On the other hand, if hole is formed by selective etch, then refer to the schematic diagram of a kind of deposit magnetic material as shown in figure 16, the material that left and right two wall invests internal pore surface is magnetic orbit.It is pointed out that if the deposition rate of positive separator is much larger than negative separator, so carry out deposit magnetic material by the hole of out-of-flatness inner surface, will the effect of the gap reducing the concavo-convex recess that obtains of deposit and convex place be played.
Optionally, after formation magnetic orbit, can also process as follows magnetic orbit: one, between two concavo-convex magnetic orbits, fill isolated material, wherein, described isolated material can be but be not limited to the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel, refers to a kind of schematic diagram to pore filling isolated material as shown in figure 17; Two, polished in the surface of the stacked body at the place, aperture of wherein one end of hole, concrete, polish off magnetic material and the isolated material on its surface, refer to a kind of schematic diagram surperficial to stacked body polishing shown in Figure 18; Three, isolated material described in the described surface coverage one deck after polishing, to play the effect of isolation and protection, refers to a kind of schematic diagram covering isolated material to stacked body shown in Figure 19.
The embodiment of the present invention by etching at least one hole on stacked body, and then deposit forms two non-touching concavo-convex magnetic orbits in each hole, can realize producing and be with concavo-convex and concavo-convex that be evenly distributed and long and straight magnetic orbit, improve read-write precision.
Fig. 2 is the schematic flow sheet of the manufacture method of magnetic orbit in the another kind of memory that provides of the embodiment of the present invention, can comprise:
S201, replaces stacking to produce stacked body by multiple positive separator and multiple negative separator.
Described positive separator is the isolated substance with different deposition rates from described negative separator, and has equal floor height.
Concrete, by multiple positive separator and multiple negative separator alternately stacking with the ordering of monoyang and monoyin, be combined into the stacked body of a stabilized structure.Refer to the structural representation of a kind of stacked body shown in Fig. 7, wherein, darker regions is positive separator, and light areas is negative separator.
S202, carries out non-selective etch to obtain at least one hole along stacking direction to described stacked body.
Described stacking direction is as shown in Figure 7 perpendicular to the direction of separator.
Concrete, in the stacking direction, at least one hole is etched to described stacked body.Refer to the structural representation of the stacked body after a kind of etching shown in Fig. 8, hole as shown in the figure, it is pointed out that hole is more, and the magnetic orbit made below is more, and memory space is larger.
Wherein, described etching is a kind of semiconductor fabrication process being peeled off and removed material by solution, reactive ion or other mechanical system.The hole that the embodiment of the present invention etches is for making two magnetic orbits and filling other isolated substance, therefore compared with in prior art only for making the hole of a magnetic orbit, its bore is much bigger, thus under bigbore condition, more easily etch height and straight cylindricality hole, avoid the situation etching funnel-form hole.
Especially, in the present embodiment, the mode of etching is non-selective etch, namely the formation material of stacked body is not distinguished, etch the hole with flat interior surface, refer to the structural representation of a kind of hole shown in Fig. 9, figure is one of them hole after carrying out non-selective etch.
S203, at the inner surface of described hole along direction deposit two non-touching magnetic materials of described hole to form two concavo-convex magnetic orbits.
Described deposit is a kind ofly precipitate and gather the manufacture craft of material.Concrete, two non-touching magnetic materials are gone out along the direction deposit of hole at the inner surface of hole, this magnetic material is magnetic orbit, known positive separator and negative separator have different deposition rates, optionally, if the deposition rate of positive separator is greater than negative separator, then the magnetic material stayed on positive separator will more than negative separator, the magnetic orbit that therefore formation two is concavo-convex.It is pointed out that the hole due to the present embodiment acquisition is not funnel-form, the magnetic orbit that therefore deposit goes out has concavo-convex uniformly.Refer to a kind of schematic diagram to hole deposit magnetic material as shown in Figure 10, the material that left and right two wall invests internal pore surface is magnetic orbit.
S204, fills isolated material between described two concavo-convex magnetic orbits.
Described isolated material can be but be not limited to the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel.Concrete, refer to a kind of schematic diagram to pore filling isolated material as shown in figure 11, between described two concavo-convex magnetic orbits, fill isolated material.
S205, polishes to the surface of the described stacked body at the place, aperture of wherein one end of described hole.
Concrete, refer to a kind of schematic diagram surperficial to stacked body polishing shown in Figure 12, polish off magnetic material and the isolated material on the surface of the stacked body at the place, aperture of wherein one end of hole.Wherein, wherein one end of described hole is one end upwards, Figure 12 mesopore.
S206, isolated material described in the described surface coverage one deck after polishing.
Concrete, refer to a kind of schematic diagram covering isolated material to stacked body shown in Figure 13, isolated material described in the surface coverage one deck after polishing, to play protection and buffer action.Wherein, this isolated material can the isolated material of forward direction pore filling with it identical.
S207, uses described magnetic material to connect described two magnetic orbits to form a U-shaped concavo-convex magnetic orbit.
Concrete, refer to a kind of schematic diagram connecting magnetic orbit shown in Figure 14, the two ends using magnetic material to connect two magnetic orbits are to form a U-shaped concavo-convex magnetic orbit.It is pointed out that the magnetic orbit in conventional memory has two kinds of designs, a kind of is two concavo-convex magnetic orbits arranged side by side, and another kind is a U-shaped concavo-convex magnetic orbit, and the embodiment of the present invention can be made into the latter.
The embodiment of the present invention is by least one hole of non-selective etch on stacked body, and then deposit forms two non-touching concavo-convex magnetic orbits in each hole, further, magnetic material is used to connect two magnetic orbits, can realize producing and be with concavo-convex and concavo-convex that be evenly distributed and long and straight U-shaped magnetic orbit, improve read-write precision.
Fig. 3 is the schematic flow sheet of the manufacture method of magnetic orbit in another memory of providing of the embodiment of the present invention, can comprise step S301 ~ S307, and its particular content can step S201 ~ 207 in analogy Fig. 2, therefore repeat no more here.
It is to be noted, both differences are the mode etched, what the embodiment of the present invention adopted is that (positive separator is faster than the etching of negative separator to form the irregular hole of inner surface for selective etch, therefore more than negative separator of the part that is etched away of positive separator), thus in deposit magnetic material process, if the deposition rate of positive separator is much larger than negative separator, so carry out deposit magnetic material by the hole of out-of-flatness inner surface, the effect reducing the concavo-convex recess (deposit place of negative separator) that obtains of deposit and the gap at convex place (deposit place of positive separator) will be played.
In addition, can to consult shown in the structural representation of a kind of hole shown in Figure 15, a kind of schematic diagram to hole deposit magnetic material shown in Figure 16, a kind of schematic diagram to pore filling isolated material shown in Figure 17, Figure 18 a kind of covers a kind of schematic diagram connecting magnetic orbit shown in the schematic diagram of isolated material and Figure 20 to a kind of shown in the schematic diagram on stacked body polishing surface, Figure 19 to stacked body for concrete distinctive points.
The embodiment of the present invention is by least one hole of selective etch on stacked body, and then deposit forms two non-touching concavo-convex magnetic orbits in each hole, further, magnetic material is used to connect two magnetic orbits, can realize producing and be with concavo-convex and concavo-convex that be evenly distributed and long and straight U-shaped magnetic orbit, improve read-write precision.
Fig. 4 is the structural representation of the manufacturing installation of magnetic orbit in the embodiment of the present invention in a kind of memory.The manufacturing installation of the magnetic orbit as shown in the figure in the embodiment of the present invention at least can comprise stacked body and produce module 410, hole etch module 420 and magnetic orbit formation module 430, wherein:
Stacked body produces module 410, for replacing stacking to produce stacked body by multiple positive separator and multiple negative separator.
Described positive separator is the isolated substance with different deposition rates from described negative separator, and has equal floor height.
Concrete, stacked body produce module 410 by multiple positive separator and multiple negative separator alternately stacking with the ordering of monoyang and monoyin, be combined into the stacked body of a stabilized structure.Refer to the structural representation of a kind of stacked body shown in Fig. 7, wherein, darker regions is positive separator, and light areas is negative separator.
Hole etch module 420, for etching at least one hole along stacking direction to described stacked body.In specific implementation, described hole etch module 420 can comprise as shown in Figure 5 further: selective etch unit 421 and non-selective etch unit 422, wherein:
Selective etch unit 421, for carrying out non-selective etch to obtain at least one hole along stacking direction to described stacked body.
Described stacking direction is as shown in Figure 7 perpendicular to the direction of separator.
Concrete, selective etch unit 421 in the stacking direction, etches at least one hole to described stacked body.Refer to the structural representation of the stacked body after a kind of etching shown in Fig. 8, hole as shown in the figure, it is pointed out that hole is more, and the magnetic orbit made below is more, and memory space is larger.
Wherein, described etching is a kind of semiconductor fabrication process being peeled off and removed material by solution, reactive ion or other mechanical system.The hole that the embodiment of the present invention etches is for making two magnetic orbits and filling other isolated substance, therefore compared with in prior art only for making the hole of a magnetic orbit, its bore is much bigger, thus under bigbore condition, more easily etch height and straight cylindricality hole, avoid the situation etching funnel-form hole.
Especially, the mode that selective etch unit 421 etches is non-selective etch, does not namely distinguish the formation material of stacked body, etches the hole with flat interior surface, refer to the structural representation of a kind of hole shown in Fig. 9, figure is one of them hole after carrying out non-selective etch.
Non-selective etch unit 422, for carrying out selective etch to obtain at least one hole along stacking direction to described stacked body.
Concrete, the etching mode that non-selective etch unit 422 performs is identical with selective etch unit 421, repeats no more here.It is to be noted, the mode that non-selective etch unit 422 etches is selective etch, namely the formation material of stacked body is distinguished, etch the hole of out-of-flatness inner surface, refer to the structural representation of the another kind of hole shown in Figure 15, figure is one of them hole after carrying out non-selective etch.In specific implementation process, optionally, the etch rate of the positive separator of stacked body is greater than negative separator, when using selective material to etch stacked body, positive separator is faster than the etching of negative separator, therefore more than negative separator of the part that is etched away of positive separator, and then form the hole of out-of-flatness inner surface.
Magnetic orbit forms module 430, for the inner surface at described hole along direction deposit two non-touching magnetic materials of described hole to form two concavo-convex magnetic orbits.
Described deposit is a kind ofly precipitate and gather the manufacture craft of material.Concrete, magnetic orbit forms module 430 and goes out two non-touching magnetic materials at the inner surface of hole along the direction deposit of hole, this magnetic material is magnetic orbit, known positive separator and negative separator have different deposition rates, optionally, if the deposition rate of positive separator is greater than negative separator, then the magnetic material stayed on positive separator will more than negative separator, the magnetic orbit that therefore formation two is concavo-convex.It is pointed out that the hole due to the present embodiment acquisition is not funnel-form, the magnetic orbit that therefore deposit goes out has concavo-convex uniformly.
On the one hand, if hole is formed by non-selective etch, then refer to a kind of schematic diagram to hole deposit magnetic material as shown in Figure 10, the material that left and right two wall invests internal pore surface is magnetic orbit.
On the other hand, if hole is formed by selective etch, then refer to a kind of schematic diagram to hole deposit magnetic material as shown in figure 16, the material that left and right two wall invests internal pore surface is magnetic orbit.It is pointed out that if the deposition rate of positive separator is much larger than negative separator, so carry out deposit magnetic material by the hole of out-of-flatness inner surface, will the effect of the gap reducing the concavo-convex recess that obtains of deposit and convex place be played.
Optionally, refer to Fig. 4, the manufacturing installation of the magnetic orbit as shown in the figure in the embodiment of the present invention can also comprise isolated material packing module 440, surface finish module 450, isolated material overlay module 460 and magnetic orbit link block 470, wherein:
Isolated material packing module 440, for filling isolated material between described two concavo-convex magnetic orbits.
Described isolated material can be but be not limited to the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel.Concrete, refer to the schematic diagram to pore filling isolated material as shown in Figure 11 or Figure 17, isolated material packing module 440 fills isolated material between described two concavo-convex magnetic orbits.
Surface finish module 450, polishes in the surface for the described stacked body at the place, aperture to described hole.
Concrete, refer to the schematic diagram surperficial to stacked body polishing shown in Figure 12 or Figure 18, surface finish module 450 polishes off magnetic material and the isolated material on the surface of the stacked body at the place, aperture of wherein one end of hole.Wherein, wherein one end of described hole is one end upwards, Figure 12 or Figure 18 mesopore.
Isolated material overlay module 460, for isolated material described in the described surface coverage one deck after polishing.
Concrete, refer to the schematic diagram covering isolated material to stacked body shown in Figure 13 or Figure 19, isolated material described in isolated material overlay module 460 surface coverage one deck after polishing, to play protection and buffer action.Wherein, this isolated material can the isolated material of forward direction pore filling with it identical.
Magnetic orbit link block 470, connects described two magnetic orbits to form a U-shaped concavo-convex magnetic orbit for using described magnetic material.
Concrete, refer to the schematic diagram of the connection magnetic orbit shown in Figure 14 or Figure 20, the two ends that magnetic orbit link block 470 uses magnetic material to connect two magnetic orbits are to form a U-shaped concavo-convex magnetic orbit.It is pointed out that the magnetic orbit in conventional memory has two kinds of designs, a kind of is two concavo-convex magnetic orbits arranged side by side, and another kind is a U-shaped concavo-convex magnetic orbit, and the former can be processed into the latter by this module.
Fig. 6 is the structural representation of the memory of a kind of carrying magnetic track that the embodiment of the present invention provides, and the memory 500 of the carrying magnetic track as shown in the figure in the embodiment of the present invention comprises stacked body 510 and at least one pair of concavo-convex magnetic orbit 520, wherein:
Stacked body 510 replaces stacking forming by multiple positive separator 511 and multiple negative separator 512, at least one is had along the hole of stacking direction etching in stacked body 510, concavo-convex magnetic orbit 520 by magnetic material hole inner surface along described hole direction deposit and formed, wherein, positive separator 511 and negative separator 512 have different deposition rates for described magnetic material.
Optionally, memory 500 also comprises isolated material 530, and described isolated material 530 is filled between described a pair concavo-convex magnetic orbit.It is to be noted, the hole that the embodiment of the present invention etches is for making two magnetic orbits 520 and filling other isolated substance 530, therefore compared with in prior art only for making the hole of a magnetic orbit, its bore is much bigger, thus under bigbore condition, more easily etches height and straight cylindricality hole, avoid the situation etching funnel-form hole, further, because hole is not funnel-form, the magnetic orbit that deposit goes out has concavo-convex uniformly.
Another optional, refer to Figure 13, the surface coverage of the stacked body 500 at the place, aperture of wherein one end of hole has other isolated material, to play the effect of isolation and protection.It is pointed out that described isolated material (comprising isolated material 530) can be but be not limited to the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel.
In addition, the magnetic orbit in conventional memory has two kinds of designs, and a kind of is two concavo-convex magnetic orbits arranged side by side, and another kind is a U-shaped concavo-convex magnetic orbit.Optionally, refer to Figure 14, in the embodiment of the present invention, a pair concavo-convex magnetic orbit 520 can also be connected U-shaped by magnetic material.
Need know, above-mentioned Fig. 6, Figure 13 and Figure 14 are wherein a kind of form of expression of the embodiment of the present invention, are not limited to this form of expression, and the another kind of form of expression of such as Figure 18, Figure 19 and Figure 20 also belongs to embodiment of the present invention protection range.
The embodiment of the present invention by etching at least one hole on stacked body, and then deposit forms two non-touching concavo-convex magnetic orbits in each hole, can realize producing and be with concavo-convex and concavo-convex that be evenly distributed and long and straight magnetic orbit, improve read-write precision.
One of ordinary skill in the art will appreciate that all or part of flow process realized in above-described embodiment method, that the hardware that can carry out instruction relevant by computer program has come, described program can be stored in a computer read/write memory medium, this program, when performing, can comprise the flow process of the embodiment as above-mentioned each side method.Wherein, described storage medium can be magnetic disc, CD, read-only store-memory body (Read-Only Memory, ROM) or random store-memory body (Random Access Memory, RAM) etc.
Above disclosedly be only present pre-ferred embodiments, certainly can not limit the interest field of the present invention with this, therefore according to the equivalent variations that the claims in the present invention are done, still belong to the scope that the present invention is contained.
Claims (14)
1. a manufacture method for the magnetic orbit in memory, is characterized in that, described method comprises:
Multiple positive separator and multiple negative separator are replaced stacking to produce stacked body;
Along stacking direction, at least one hole is etched to described stacked body;
At the inner surface of described hole along direction deposit two non-touching magnetic materials of described hole to form two concavo-convex magnetic orbits, wherein, described positive separator and described negative separator have different deposition rates for described magnetic material.
2. the method for claim 1, is characterized in that, describedly etches at least one hole along stacking direction to described stacked body, comprising:
Along stacking direction, non-selective etch is carried out to obtain at least one hole to described stacked body; Or
Along stacking direction, selective etch is carried out to obtain at least one hole to described stacked body.
3. the method for claim 1, is characterized in that, the described inner surface at described hole, also comprises along direction deposit two non-touching magnetic materials of described hole with after forming two concavo-convex magnetic orbits:
Isolated material is filled between described two concavo-convex magnetic orbits;
Polished in the surface of the described stacked body at the place, aperture of wherein one end of described hole;
Isolated material described in described surface coverage one deck after polishing.
4. method as claimed in claim 3, it is characterized in that, described isolated material comprises the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel.
5. the method as described in any one of claim 1-2, is characterized in that, the described inner surface at described hole, also comprises along direction deposit two non-touching magnetic materials of described hole with after forming two concavo-convex magnetic orbits:
Described magnetic material is used to connect described two magnetic orbits to form a U-shaped concavo-convex magnetic orbit.
6. a manufacturing installation for the magnetic orbit in memory, is characterized in that, described device comprises:
Stacked body produces module, for replacing stacking to produce stacked body by multiple positive separator and multiple negative separator;
Hole etch module, for etching at least one hole along stacking direction to described stacked body;
Magnetic orbit forms module, for the inner surface at described hole along direction deposit two non-touching magnetic materials of described hole to form two concavo-convex magnetic orbits, wherein, described positive separator and described negative separator have different deposition rates for described magnetic material.
7. device as claimed in claim 6, it is characterized in that, described hole etch module comprises:
Selective etch unit, for carrying out non-selective etch to obtain at least one hole along stacking direction to described stacked body; Or
Non-selective etch unit, for carrying out selective etch to obtain at least one hole along stacking direction to described stacked body.
8. device as claimed in claim 6, it is characterized in that, described device also comprises:
Isolated material packing module, for filling isolated material between described two concavo-convex magnetic orbits;
Surface finish module, polish in the surface for the described stacked body at the place, aperture to described hole;
Isolated material overlay module, for isolated material described in the described surface coverage one deck after polishing.
9. device as claimed in claim 8, it is characterized in that, described isolated material comprises the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel.
10. the device as described in any one of claim 8-9, is characterized in that, described device also comprises:
Magnetic orbit link block, connects described two magnetic orbits to form a U-shaped concavo-convex magnetic orbit for using described magnetic material.
The memory of 11. 1 kinds of carrying magnetic tracks, is characterized in that, described memory comprises stacked body and at least one pair of concavo-convex magnetic orbit, wherein:
Described stacked body replaces stacking forming by multiple positive separator and multiple negative separator, at least one is had along the hole of stacking direction etching in described stacked body, described concavo-convex magnetic orbit by magnetic material described hole inner surface along described hole direction deposit and formed, wherein, described positive separator and described negative separator have different deposition rates for described magnetic material.
12. memories as claimed in claim 11, it is characterized in that, described memory also comprises isolated material, the described isolated material of a part is filled between described a pair concavo-convex magnetic orbit, and the described isolated material of another part covers the surface of the described stacked body at the place, aperture of wherein one end of described hole.
13. memories as claimed in claim 11, is characterized in that, described a pair concavo-convex magnetic orbit is connected U-shaped by described magnetic material.
14. memories as claimed in claim 12, is characterized in that, described isolated material comprises the mixture of metal oxide and the described metal oxide be made up of any one or multiple element in iron, cobalt or nickel.
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| CN201410111552.XA CN104953025B (en) | 2014-03-24 | 2014-03-24 | A kind of manufacture method of the magnetic orbit in memory, device and a kind of memory |
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| CN201410111552.XA CN104953025B (en) | 2014-03-24 | 2014-03-24 | A kind of manufacture method of the magnetic orbit in memory, device and a kind of memory |
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| CN1373477A (en) * | 2001-01-16 | 2002-10-09 | 佳能株式会社 | Method for annealing magnetic domain wall moving type magnetooptic disc, and magnetooptical disc |
| US20050169116A1 (en) * | 2004-02-02 | 2005-08-04 | Canon Kabushiki Kaisha | Magnetic domain wall displacement magneto-optical recording medium |
| CN1691200A (en) * | 2004-02-25 | 2005-11-02 | 国际商业机器公司 | Method of fabricating data tracks for use in a magnetic shift register memory device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373477A (en) * | 2001-01-16 | 2002-10-09 | 佳能株式会社 | Method for annealing magnetic domain wall moving type magnetooptic disc, and magnetooptical disc |
| US20050169116A1 (en) * | 2004-02-02 | 2005-08-04 | Canon Kabushiki Kaisha | Magnetic domain wall displacement magneto-optical recording medium |
| CN1691200A (en) * | 2004-02-25 | 2005-11-02 | 国际商业机器公司 | Method of fabricating data tracks for use in a magnetic shift register memory device |
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