CN104928625A - 一种pvd制备半导体装备用抗高温蠕变接地基片的方法 - Google Patents

一种pvd制备半导体装备用抗高温蠕变接地基片的方法 Download PDF

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CN104928625A
CN104928625A CN201510268660.2A CN201510268660A CN104928625A CN 104928625 A CN104928625 A CN 104928625A CN 201510268660 A CN201510268660 A CN 201510268660A CN 104928625 A CN104928625 A CN 104928625A
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熊天英
吴杰
沈艳芳
崔新宇
金花子
吴敏杰
唐伟东
侯涛
李茂程
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Shenyang Fortune Precision Equipment Co Ltd
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Abstract

本发明涉及一种制备半导体装备用抗高温蠕变接地基片的方法，具体涉及一种PVD制备半导体装备用抗高温蠕变接地基片的方法。本发明的技术方案为，以不锈钢、镍合金或耐热钢材料作为半导体装备用抗高温蠕变接地基片的基体，采用PVD技术在所述基体表面制备无氧化纯铝涂层，制得半导体装备用抗高温蠕变接地基片。本发明一方面利用纯铝的导电性能及其与大规模集成电路工艺的相容性，另一方面利用基体的力学性能解决接地基片抗高温蠕变性不够的问题。

Description

一种PVD制备半导体装备用抗高温蠕变接地基片的方法
技术领域
本发明涉及一种制备半导体装备用抗高温蠕变接地基片的方法，具体涉及一种PVD制备半导体装备用抗高温蠕变接地基片的方法。
背景技术
半导体装备中的接地基片处于高温等离子辐射和氟化物气体共同作用环境，不仅要求其具有良好的导电性能，而且对其抗高温蠕变性也提出了越来越高的要求。纯铝材料是半导体装备、尤其是大规模集成电路装备中理想的导电材料，这主要是因为铝除了具有良好的导电性外，在集成电路刻蚀、光刻以及镀膜等工艺过程中对元器件的污染最小。但是铝的熔点较低，只能在较低温度下(300℃以下)使用，随着工艺优化设计的要求，接地基片所处腔室的温度不断提高，已超过350℃，且还在提高，甚至超过400℃，此时纯铝材料本身已无法满足使用要求。不锈钢、镍基合金等具备优异的高温性能，但是导电性较差，而且在强等离子辐射条件下释放铁、镍等有害金属离子，污染半导体工艺环境，导致刻蚀、光刻以及镀膜过程中元器件报废。
发明内容
本发明提供一种PVD(即物理气相沉积)制备半导体装备用抗高温蠕变接地基片的方法，以不锈钢、镍合金或耐热钢等高温力学性能较好的材料作为半导体装备用抗高温蠕变接地基片的基体，在其表面制备厚度均匀、结合力良好的无氧化纯铝涂层，一方面利用纯铝的导电性能及其与大规模集成电路工艺的相容性，另一方面利用基体的力学性能解决接地基片抗高温蠕变性不够的问题。
本发明的技术方案如下：
一种PVD制备半导体装备用抗高温蠕变接地基片的方法，以不锈钢、镍合金或耐热钢材料作为半导体装备用抗高温蠕变接地基片的基体，采用PVD技术在所述基体表面制备无氧化纯铝涂层，制得半导体装备用抗高温蠕变接地基片。
所述的PVD制备半导体装备用抗高温蠕变接地基片的方法，具体步骤如下：
(1)所述基体的前处理：将所述基体表面先进行纹理处理，纹理处理工艺参数为：320#砂纸抛光，去除基体表面积碳层，再用无水乙醇进行清洗；
(2)采用物理气相沉积工艺制备纯铝涂层，利用PVD真空镀膜系统，使气态的铝原子定向沉积于所述基体表面，形成无氧化纯铝涂层。
所述的PVD制备半导体装备用抗高温蠕变接地基片的方法，其物理气相沉积工艺参数如下：距离550mm，阴极电压20～40V，电流70～90A，真空度1×10-3～6×10-3Pa，辅助沉积电压800V，辅助沉积电流1A，纯铝涂层厚度1～50微米。
所述的PVD制备半导体装备用抗高温蠕变接地基片的方法，其中所述PVD真空镀膜系统包括：真空室、转架、金属阴极、聚焦线圈、电源、辅助阴极、阳极、电压表和偏转电磁线圈，两个转架对称设置于真空室中，转架用于放置所述基体，转架之间设置偏转电磁线圈，金属阴极与偏转电磁线圈相对应；转架与辅助阴极相对应，在辅助阴极与转架之间的通道两侧分别设置阳极，辅助阴极与转架上的基体之间设置电压表，金属阴极通过电源供电，金属阴极的两侧设置聚焦线圈。
所述的PVD制备半导体装备用抗高温蠕变接地基片的方法，其中所述转架的外部为环形带，环形带设置一处开口，开口处以弹簧连接。
本发明的有益效果如下：
1.本发明是用PVD法制备半导体装备用抗高温蠕变接地基片(1－50微米)，和冷喷涂方法(100微米以上)相比较所制备的涂层厚度薄、与基体结合良好、涂层致密，导电性能良好。
2.本发明采用PVD方法，纯铝涂层是在真空条件下气相沉积形成的，因此涂层致密没有氧化，从而提高接地基片的导电性能。
3.本发明还具有沉积效率高、安全、成本低和无环境污染等特点。
4、半导体装备中接地基片非常薄，处于柔软状态，因此称之为软基片。在软基片上制备导电涂层，要达到厚度均匀、结合力良好很难实现。本发明采用转架和偏转电磁线圈，减少了大颗粒铝的产生，通过PVD法制备铝涂层，能够实现喷涂的涂层厚度均匀、结合力良好，薄膜厚度控制在1-50微米范围，结合强度达10－15MP。
附图说明
图1为本发明的PVD真空镀膜系统结构图；
图2为本发明的转架结构图。
具体实施方式
如图1、2所示，PVD真空镀膜系统包括：真空室1、转架2、金属阴极3(纯铝靶)、聚焦线圈4、电源5、辅助阴极7、阳极8、电压表9和偏转电磁线圈6，两个转架2对称设置于真空室1中，转架2之间设置偏转电磁线圈6，金属阴极3与偏转电磁线圈6相对应；转架2与辅助阴极7相对应，在辅助阴极7与转架2之间的通道两侧分别设置阳极8，辅助阴极7与转架2上的半导体装备用抗高温蠕变接地基片的基体之间设置电压表9，金属阴极3通过电源5供电，金属阴极3的两侧设置聚焦线圈4。转架2的外部为环形带10，环形带10设置一处开口，开口处以弹簧11连接，半导体装备用抗高温蠕变接地基片的基体放置在环形带10上，两端予以固定，弹簧11的涨力使所述基体紧绷，可以减少基体在镀膜过程中由于温度的变化产生形变的影响，从而提高膜层质量。
具体步骤如下：
(1)所述基体的前处理：将所述基体表面先进行纹理处理，纹理处理工艺参数为：320#砂纸抛光，去除基体表面积碳层，再用无水乙醇进行清洗；
(2)采用物理气相沉积工艺制备纯铝涂层，利用PVD真空镀膜系统，使气态的铝原子定向沉积于所述基体表面，形成纯铝涂层，制得半导体装备用抗高温蠕变接地基片。其物理气相沉积工艺参数如下：距离550mm，阴极电压20～40V，电流70～90A，真空度1×10-3～6×10-3Pa，辅助沉积电压800V，辅助沉积电流1A，涂层厚度1～50微米。
本实施例中，采用特定的工艺可以实现真空状态下的金属铝涂层沉积，这种工艺过程能够在镍基合金等材料上形成均匀致密的Al涂层，而不影响基体材料的性能，为制备高性能无氧涂层提供一种重要的工艺方法，采用PVD方法在镍基合金表面成功地制备出性能良好的导电涂层。导电涂层的具体性能参数如下：导电性5-7×10-8欧姆/米，结合强度10-15MP，详见表1。
表1：冷喷涂和PVD法制备抗高温蠕变接地基片性能比较
制备方法 涂层厚度 结合强度MP 导电性
冷喷涂 100微米以上 10-20 4-8×10-8欧姆/米
PVD法 1-50微米 10-15 5-7×10-8欧姆/米
和冷喷涂制备的接地基片相比较，采用PVD法制备的半导体装备用抗高温蠕变接地基片具有涂层薄的特点。
以上是本发明的优选实施例，在不脱离本发明构思的前提下，采用其它的PVD技术制备的半导体工艺装备用抗高温蠕变接地基片，也应视为本发明的保护范围。

Claims (5)

1.一种PVD制备半导体装备用抗高温蠕变接地基片的方法，其特征在于，所述方法以不锈钢、镍合金或耐热钢材料作为半导体装备用抗高温蠕变接地基片的基体，采用PVD技术在所述基体表面制备无氧化纯铝涂层，制得半导体装备用抗高温蠕变接地基片。
2.根据权利要求1所述的PVD制备半导体装备用抗高温蠕变接地基片的方法，其特征在于，具体步骤如下：
(1)所述基体的前处理：将所述基体表面先进行纹理处理，纹理处理工艺参数为：320#砂纸抛光，去除基体表面积碳层，再用无水乙醇进行清洗；
(2)采用物理气相沉积工艺制备纯铝涂层，利用PVD真空镀膜系统，使气态的铝原子定向沉积于所述基体表面，形成无氧化纯铝涂层。
3.根据权利要求1或2所述的PVD制备半导体装备用抗高温蠕变接地基片的方法，其特征在于，物理气相沉积工艺参数如下：距离550mm，阴极电压20～40V，电流70～90A，真空度1×10-3～6×10-3Pa，辅助沉积电压800V，辅助沉积电流1A，纯铝涂层厚度1～50微米。
4.根据权利要求2所述的PVD制备半导体装备用抗高温蠕变接地基片的方法，其特征在于，所述PVD真空镀膜系统包括：真空室、转架、金属阴极、聚焦线圈、电源、辅助阴极、阳极、电压表和偏转电磁线圈，两个转架对称设置于真空室中，转架之间设置偏转电磁线圈，金属阴极与偏转电磁线圈相对应；转架与辅助阴极相对应，在辅助阴极与转架之间的通道两侧分别设置阳极，辅助阴极与转架上的所述基体之间设置电压表，金属阴极通过电源供电，金属阴极的两侧设置聚焦线圈。
5.根据权利要求4所述的PVD制备半导体装备用抗高温蠕变接地基片的方法，其特征在于，所述转架的外部为环形带，环形带设置一处开口，开口处以弹簧连接。
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