CN104916751A - III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法 - Google Patents

III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法 Download PDF

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Publication number
CN104916751A
CN104916751A CN201510102739.8A CN201510102739A CN104916751A CN 104916751 A CN104916751 A CN 104916751A CN 201510102739 A CN201510102739 A CN 201510102739A CN 104916751 A CN104916751 A CN 104916751A
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China
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nitride semiconductor
group iii
iii nitride
semiconductor layer
type
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CN201510102739.8A
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Chinese (zh)
Inventor
盐谷阳平
京野孝史
上野昌纪
中村孝夫
松浦尚
滨口达史
古岛裕司
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Sony Corp
Sumitomo Electric Industries Ltd
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Sony Corp
Sumitomo Electric Industries Ltd
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Publication of CN104916751A publication Critical patent/CN104916751A/zh
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201510102739.8A 2014-03-10 2015-03-09 III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法 Pending CN104916751A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-046342 2014-03-10
JP2014046342A JP2015170803A (ja) 2014-03-10 2014-03-10 ＩＩＩ族窒化物半導体素子、ｐ型コンタクト構造、ＩＩＩ族窒化物半導体素子を作製する方法

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CN104916751A true CN104916751A (zh) 2015-09-16

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US (1) US9379523B2 (enExample)
JP (1) JP2015170803A (enExample)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111279495A (zh) * 2017-10-16 2020-06-12 阿卜杜拉国王科技大学 具有氮化硼合金接触层的iii族氮化物半导体器件及其制造方法
US12588315B2 (en) 2018-10-15 2026-03-24 King Abdullah University Of Science And Technology III-nitride semiconuctor devices having a boron nitride alloy contact layer and method of production

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12349528B2 (en) * 2021-10-25 2025-07-01 Meta Platforms Technologies, Llc Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow

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CN1292934A (zh) * 1998-03-12 2001-04-25 日亚化学工业株式会社 氮化物半导体元件
US6479836B1 (en) * 1999-08-19 2002-11-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US20130009202A1 (en) * 2011-06-29 2013-01-10 Sony Corporation Group iii nitride semiconductor device, method of fabricating group iii nitride semiconductor device
CN103493316A (zh) * 2011-04-22 2014-01-01 住友电气工业株式会社 氮化物半导体激光器及外延基板

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JP3680558B2 (ja) * 1998-05-25 2005-08-10 日亜化学工業株式会社 窒化物半導体素子
JP4933130B2 (ja) * 2006-02-16 2012-05-16 昭和電工株式会社 ＧａＮ系半導体発光素子およびその製造方法
US8144743B2 (en) * 2008-03-05 2012-03-27 Rohm Co., Ltd. Nitride based semiconductor device and fabrication method for the same
JP4390007B2 (ja) * 2008-04-07 2009-12-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子及びエピタキシャルウエハ
JP4917585B2 (ja) * 2008-08-26 2012-04-18 住友電気工業株式会社 窒化物系半導体光素子を製造する方法、及びエピタキシャルウエハを製造する方法
EP2323180A1 (en) * 2008-09-11 2011-05-18 Sumitomo Electric Industries, Ltd. Nitride semiconductor optical device, epitaxial wafer for nitride semiconductor optical device, and method for manufacturing semiconductor light-emitting device
JP4793489B2 (ja) * 2009-12-01 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5054221B1 (ja) * 2011-08-26 2012-10-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子
JP5522147B2 (ja) * 2011-11-02 2014-06-18 住友電気工業株式会社 窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法

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Publication number Priority date Publication date Assignee Title
CN1292934A (zh) * 1998-03-12 2001-04-25 日亚化学工业株式会社 氮化物半导体元件
US6479836B1 (en) * 1999-08-19 2002-11-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN103493316A (zh) * 2011-04-22 2014-01-01 住友电气工业株式会社 氮化物半导体激光器及外延基板
US20130009202A1 (en) * 2011-06-29 2013-01-10 Sony Corporation Group iii nitride semiconductor device, method of fabricating group iii nitride semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111279495A (zh) * 2017-10-16 2020-06-12 阿卜杜拉国王科技大学 具有氮化硼合金接触层的iii族氮化物半导体器件及其制造方法
US12588315B2 (en) 2018-10-15 2026-03-24 King Abdullah University Of Science And Technology III-nitride semiconuctor devices having a boron nitride alloy contact layer and method of production

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US9379523B2 (en) 2016-06-28
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Application publication date: 20150916