CN104916751A - III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法 - Google Patents

III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法 Download PDF

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Publication number
CN104916751A
CN104916751A CN201510102739.8A CN201510102739A CN104916751A CN 104916751 A CN104916751 A CN 104916751A CN 201510102739 A CN201510102739 A CN 201510102739A CN 104916751 A CN104916751 A CN 104916751A
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China
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nitride semiconductor
group iii
iii nitride
semiconductor layer
type
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CN201510102739.8A
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English (en)
Chinese (zh)
Inventor
盐谷阳平
京野孝史
上野昌纪
中村孝夫
松浦尚
滨口达史
古岛裕司
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Sony Corp
Sumitomo Electric Industries Ltd
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Sony Corp
Sumitomo Electric Industries Ltd
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Publication of CN104916751A publication Critical patent/CN104916751A/zh
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201510102739.8A 2014-03-10 2015-03-09 III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法 Pending CN104916751A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-046342 2014-03-10
JP2014046342A JP2015170803A (ja) 2014-03-10 2014-03-10 ＩＩＩ族窒化物半導体素子、ｐ型コンタクト構造、ＩＩＩ族窒化物半導体素子を作製する方法

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CN104916751A true CN104916751A (zh) 2015-09-16

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US (1) US9379523B2 (enExample)
JP (1) JP2015170803A (enExample)
CN (1) CN104916751A (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN111279495A (zh) * 2017-10-16 2020-06-12 阿卜杜拉国王科技大学 具有氮化硼合金接触层的iii族氮化物半导体器件及其制造方法

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US12349528B2 (en) * 2021-10-25 2025-07-01 Meta Platforms Technologies, Llc Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow

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CN1292934A (zh) * 1998-03-12 2001-04-25 日亚化学工业株式会社 氮化物半导体元件
US6479836B1 (en) * 1999-08-19 2002-11-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US20130009202A1 (en) * 2011-06-29 2013-01-10 Sony Corporation Group iii nitride semiconductor device, method of fabricating group iii nitride semiconductor device
CN103493316A (zh) * 2011-04-22 2014-01-01 住友电气工业株式会社 氮化物半导体激光器及外延基板

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JP4933130B2 (ja) * 2006-02-16 2012-05-16 昭和電工株式会社 ＧａＮ系半導体発光素子およびその製造方法
US8144743B2 (en) * 2008-03-05 2012-03-27 Rohm Co., Ltd. Nitride based semiconductor device and fabrication method for the same
JP4390007B2 (ja) * 2008-04-07 2009-12-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子及びエピタキシャルウエハ
JP4917585B2 (ja) * 2008-08-26 2012-04-18 住友電気工業株式会社 窒化物系半導体光素子を製造する方法、及びエピタキシャルウエハを製造する方法
KR101142672B1 (ko) * 2008-09-11 2012-05-11 스미토모덴키고교가부시키가이샤 질화물계 반도체 광소자, 질화물계 반도체 광소자용의 에피택셜 웨이퍼, 및 반도체 발광 소자를 제조하는 방법
JP4793489B2 (ja) * 2009-12-01 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5054221B1 (ja) * 2011-08-26 2012-10-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子
JP5522147B2 (ja) * 2011-11-02 2014-06-18 住友電気工業株式会社 窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法

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CN1292934A (zh) * 1998-03-12 2001-04-25 日亚化学工业株式会社 氮化物半导体元件
US6479836B1 (en) * 1999-08-19 2002-11-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN103493316A (zh) * 2011-04-22 2014-01-01 住友电气工业株式会社 氮化物半导体激光器及外延基板
US20130009202A1 (en) * 2011-06-29 2013-01-10 Sony Corporation Group iii nitride semiconductor device, method of fabricating group iii nitride semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111279495A (zh) * 2017-10-16 2020-06-12 阿卜杜拉国王科技大学 具有氮化硼合金接触层的iii族氮化物半导体器件及其制造方法

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Application publication date: 20150916