CN104916751A - III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法 - Google Patents

III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法 Download PDF

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Publication number
CN104916751A
CN104916751A CN201510102739.8A CN201510102739A CN104916751A CN 104916751 A CN104916751 A CN 104916751A CN 201510102739 A CN201510102739 A CN 201510102739A CN 104916751 A CN104916751 A CN 104916751A
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China
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nitride semiconductor
group iii
iii nitride
semiconductor layer
type
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CN201510102739.8A
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Chinese (zh)
Inventor
盐谷阳平
京野孝史
上野昌纪
中村孝夫
松浦尚
滨口达史
古岛裕司
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Sony Corp
Sumitomo Electric Industries Ltd
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Sony Corp
Sumitomo Electric Industries Ltd
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Publication of CN104916751A publication Critical patent/CN104916751A/zh
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    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201510102739.8A 2014-03-10 2015-03-09 III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法 Pending CN104916751A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014046342A JP2015170803A (ja) 2014-03-10 2014-03-10 ＩＩＩ族窒化物半導体素子、ｐ型コンタクト構造、ＩＩＩ族窒化物半導体素子を作製する方法
JP2014-046342 2014-03-10

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CN104916751A true CN104916751A (zh) 2015-09-16

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US (1) US9379523B2 (cg-RX-API-DMAC10.html)
JP (1) JP2015170803A (cg-RX-API-DMAC10.html)
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CN111279495A (zh) * 2017-10-16 2020-06-12 阿卜杜拉国王科技大学 具有氮化硼合金接触层的iii族氮化物半导体器件及其制造方法

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US12349528B2 (en) * 2021-10-25 2025-07-01 Meta Platforms Technologies, Llc Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow

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US6479836B1 (en) * 1999-08-19 2002-11-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US20130009202A1 (en) * 2011-06-29 2013-01-10 Sony Corporation Group iii nitride semiconductor device, method of fabricating group iii nitride semiconductor device
CN103493316A (zh) * 2011-04-22 2014-01-01 住友电气工业株式会社 氮化物半导体激光器及外延基板

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JP4917585B2 (ja) * 2008-08-26 2012-04-18 住友電気工業株式会社 窒化物系半導体光素子を製造する方法、及びエピタキシャルウエハを製造する方法
CN101874309B (zh) * 2008-09-11 2013-01-30 住友电气工业株式会社 氮化物类半导体光元件、用于氮化物类半导体光元件的外延晶片及制造半导体发光元件的方法
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CN1292934A (zh) * 1998-03-12 2001-04-25 日亚化学工业株式会社 氮化物半导体元件
US6479836B1 (en) * 1999-08-19 2002-11-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN103493316A (zh) * 2011-04-22 2014-01-01 住友电气工业株式会社 氮化物半导体激光器及外延基板
US20130009202A1 (en) * 2011-06-29 2013-01-10 Sony Corporation Group iii nitride semiconductor device, method of fabricating group iii nitride semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111279495A (zh) * 2017-10-16 2020-06-12 阿卜杜拉国王科技大学 具有氮化硼合金接触层的iii族氮化物半导体器件及其制造方法
US12588315B2 (en) 2017-10-16 2026-03-24 King Abdullah University Of Science And Technology III-nitride semiconuctor devices having a boron nitride alloy contact layer and method of production

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