CN104916717B - 太阳能电池及其制造方法 - Google Patents
太阳能电池及其制造方法 Download PDFInfo
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- 238000010521 absorption reaction Methods 0.000 claims description 4
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 4
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- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
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- 238000005987 sulfurization reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明描述了一种太阳能电池及其制造方法。该太阳能电池包括衬底、位于衬底上方的背接触层、位于背接触层的上部的P1沟槽以及设置在P1沟槽中的绝缘体。该太阳能电池也可以包括位于背接触层和绝缘体上方的吸收层以及位于吸收层上方的前接触层。
Description
技术领域
本发明一般涉及半导体技术领域,更具体地,涉及光伏太阳能电池的制造。
背景技术
太阳能电池是用于通过光伏效应利用太阳光直接生成电流的电子器件。通过相应的互连结构串联连接多个太阳能电池以形成太阳能电池模块。可以通过单片集成连接太阳能电池。在该工艺期间,在太阳能电池材料中刻划用于互连结构的沟槽以隔离和连接太阳能电池。然而,由于器件中的串联电阻、分流路径和死区,太阳能电池的单片集成会导致转换效率损耗。
存在介于太阳能电池器件中的分流路径损耗和死区损耗之间折中。具体地,分流路径损耗通常会随着互连结构的宽度的增大而减小,而死区损耗通常会随着互连结构的宽度的增大而增大。由于改进分流路径损耗的方法通常会导致死区损耗恶化,反之亦然,所以这种折中限制了器件的效率。
发明内容
为了解决现有技术中所存在的缺陷,根据本发明的一方面,提供了一种太阳能电池子结构,包括:衬底;背接触层,位于所述衬底上方;P1沟槽,位于所述背接触层中;以及绝缘体,设置在所述P1沟槽中。
在该太阳能电池中,所述P1沟槽的宽度小于约30μm。
在该太阳能电池中,所述P1沟槽的宽度为约25μm或更小。
在该太阳能电池中,所述绝缘体填充所述P1沟槽。
在该太阳能电池中,所述绝缘体的宽度基本上等于所述P1沟槽的宽度。
在该太阳能电池中,所述绝缘体的厚度大于所述背接触层的厚度。
该太阳能电池还包括位于所述背接触层上方的吸收层,其中,所述绝缘体的厚度小于所述背接触层和所述吸收层的组合厚度。
根据本发明的另一方面,提供了一种太阳能电池,包括:衬底;背接触层,位于所述衬底上方;绝缘体,位于所述衬底上方并且延伸穿过所述背接触层;吸收层,位于所述背接触层和所述绝缘体上方,以及前接触层,位于所述吸收层上方。
在该太阳能电池中,所述绝缘体延伸穿过所述吸收层的一部分。
在该太阳能电池中,所述绝缘体的厚度小于所述背接触层和所述吸收层的组合厚度。
在该太阳能电池中,所述绝缘体的电阻率为约10000ohm-cm或更大。
在该太阳能电池中,所述绝缘体的电阻率为约15000ohm-cm或更大。
在该太阳能电池中,所述绝缘体包括二氧化硅。
在该太阳能电池中,所述P1沟槽的宽度小于25μm。
在该太阳能电池中,所述吸收层包括基于黄铜矿的材料。
根据本发明的又一方面,提供了一种用于制造太阳能电池的方法,包括:提供衬底;在其中嵌入有绝缘体的所述衬底上方提供背接触层;在所述背接触层和所述绝缘体上方沉积吸收层;以及在所述吸收层上方沉积前接触层。
在该方法中,提供所述背接触层的步骤包括:在所述衬底上方沉积所述背接触层;穿过所述背接触层刻划P1沟槽;以及在所述P1沟槽内形成所述绝缘体。
在该方法中,提供所述背接触层的步骤包括:在所述衬底上沉积所述背接触层;在所述背接触层上沉积光刻胶层,所述光刻胶层包括P1沟槽部分和剩余部分;利用遮挡掩模露出所述P1沟槽部分;消除所述光刻胶层的所述P1沟槽部分;在所述P1沟槽内沉积所述绝缘体;以及消除所述光刻胶层的所述剩余部分。
在该方法中,在所述吸收层沉积步骤之前实施所述嵌入步骤。
在该方法中,所述吸收层沉积步骤包括前体沉积和硒化。
附图说明
当结合附图进行阅读时,通过以下详细描述可以更好地理解本发明的各个方面。应该注意,根据工业中的标准实践,各个部件未按比例绘出。事实上,为了清楚的讨论,各个部件的尺寸可以任意地增大或减小。
图1是根据一些实施例的太阳能电池的示意性截面图。
图2A是根据一些实施例的太阳能电池子结构的示意性截面图。
图2B是根据一些实施例的太阳能电池子结构的示意性截面图。
图2C是根据一些实施例的太阳能电池子结构的示意性截面图。
图3是根据一些实施例的太阳能电池的示意性截面图。
图4是根据一些实施例制造太阳能电池的方法的流程图。
图5A是根据一些实施例的太阳能电池子结构的示意性截面图。
图5B是根据一些实施例的太阳能电池子结构的示意性截面图。
图5C是根据一些实施例的太阳能电池子结构的示意性截面图。
图5D是根据一些实施例的太阳能电池子结构的示意性截面图。
图5E是根据一些实施例的太阳能电池子结构的示意性截面图。
图5F是根据一些实施例的太阳能电池子结构的示意性截面图。
图5G是根据一些实施例的太阳能电池子结构的示意性截面图。
图6是在根据一些实施例的太阳能电池与其他太阳能电池器件相比较的情况下,仿真的效率与P1宽度的曲线图。
具体实施方式
以下公开内容提供了许多用于实现主题的不同特征的不同实施例或实例。下面描述了组件和布置的具体实例以简化本发明。当然,这些仅仅是实例,并不旨在限制本发明。例如,在以下描述中,在第二部件上方或者上形成第一部件可以包括以直接接触的方式形成第一部件和第二部件的实施例,并且也可以包括在第一部件和第二部件之间可以形成额外的部件,使得第一部件和第二部件可以不直接接触的实施例。此外,本发明可以在各个实例中重复参考标号和/或字母。该重复是为了简明和清楚的目的,而且其本身不指示所论述的各个实施例和/或结构之间的关系。
而且,为了便于描述,在此可以使用诸如“在...下面”、“在...下方”、“下部”、“在...之上”、“上部”等的空间相对术语以描述如图所示的一个元件或部件与另一个(或另一些)元件或部件的关系。除了图中示出的方位之外,空间相对术语旨在包括器件在使用或操作中的不同方位。装置可以以其他方式进行定向(旋转90度或在其他方位上),并且在此使用的空间相对描述符可以同样地进行相应的解释。
尽管下面描述了太阳能电池的具体实例,但是在此描述的结构和方法可以通过pn结、p-i-n结构、MIS结构、多结等应用于各种太阳能电池,包括Cu(In,Ga)Se2(CIGS)、CuInSe2(CIS)、CuGaSe2(CGS)、Cu(In,Ga)(Se,S)2(CIGSS)、非晶硅(α-Si)和碲化镉(CdTe)。
图1至图3示出了根据本发明的一些实施例的太阳能电池10和子结构。如图1所示,太阳能电池10包括衬底20和位于衬底20上方的背接触层31、位于衬底20上方的绝缘体35、位于背接触层31上方的吸收层40和位于吸收层40上方的前接触层50。绝缘体35在太阳能电池10中可以嵌入前接触层50下方,并且在一些实施例中,嵌入吸收层40的至少一部分下方。
图4示出了描述用于制造太阳能电池的主要方法100的流程图。在步骤120中,提供了衬底。衬底20包括任何合适的衬底材料。在一些实施例中,衬底20可以包括玻璃(例如,钠钙玻璃或无钠(高应变点)玻璃)、柔性金属箔(例如,不锈钢箔)、聚合物(例如,聚酰亚胺、聚对苯二甲酸乙二醇酯(PET)、聚乙烯奈(PEN))或其他合适的衬底材料。在一些实施例中,衬底20的厚度可以在约50nm到约2μm的范围内。
在步骤130中,将绝缘体嵌入到衬底上方的背接触层中。在一些实施例中,“绝缘体”包括电阻率大于吸收层40的电阻率的绝缘材料。在一些实施例中,绝缘体的电阻率可以为约10000ohm-cm或更大。例如,绝缘体的电阻率可以为大于10000ohm-cm或更大;或者约10500ohm-cm或更大;11000ohm-cm或更大;12500ohm-cm或更大;或者15000ohm-cm或更大。在一些实施例中,绝缘体35包括诸如SiO2的氧化硅(SiOx)、氮化硅等。在一些实施例中,穿过背接触层31的至少一部分沉积、形成或以其他方式设置绝缘体35,使得背接触层材料环绕绝缘体35的侧面的至少一部分。在一些实施例中,如图1所示,绝缘体35延伸穿过背接触层31的整个厚度。
在一些实施例中,根据如图4所示的子步骤131至子步骤135,可以将绝缘体35嵌入到背接触层31中。在子步骤131中,在衬底20上方沉积背接触层31。背接触层31包括诸如金属的任何合适的导电材料。在一些实施例中,背接触层31可以包括钼(Mo)、铂(Pt)、金(Au)、银(Ag)、镍(Ni)或铜(Cu)。可以基于薄膜太阳能电池器件的类型选择背接触层31。例如,在CIGS或其他基于CIS的太阳能电池器件10中,背接触层31可以是Mo。在一些实施例中,背接触层31的厚度可以在约50nm到约2μm的范围内。
在子步骤133中,在背接触层31中刻划P1沟槽71。如图2A所示,沟槽71可以延伸穿过背接触层31的整个厚度,或可以仅延伸穿过背接触层31的厚度的一部分。在一些实施例中,如图3所示,太阳能电池10也包括形成在背接触层31和吸收层40之间的界面层38。界面层38包括相应的材料,诸如用于Mo背接触层31的二硒化钼(MoSe2)界面层38。在具有界面层38的实施例中,也可以穿过界面层38刻划P1沟槽71。
可以使用激光刻划、机械图案化、光刻或其他合适的方法刻划P1沟槽71。在一些实施例中,P1沟槽71的宽度(在图2A中示出为WA)可以小于约50μm或更小。在其他实施例中,沟槽71的宽度WA可以为约30μm或更小、或者25μm或更小。优选地,宽度WA可以小于25μm。例如,沟槽71的宽度WA可以为约20μm或更小、或者15μm或更小、10μm或更小、或者5μm或更小。
在子步骤135中,将绝缘体35沉积在P1沟槽71内。在一些实施例中,例如,通过物理汽相沉积(PVD)、化学汽相沉积(CVD)、原子层沉积(ALD)等来实施该沉积。绝缘体的宽度(在图2B中示出为WB)可以调整为符合P1沟槽71。例如,宽度WB可以基本上等于沟槽宽度WA。在一些实施例中,如图2B所示,绝缘体35可以基本上填充P1沟槽,或绝缘体35可以仅填充P1沟槽71的一部分。在一些实施例中,绝缘体35的厚度大于背接触层31的厚度。在一些实施例中,绝缘体35的厚度小于吸收层40的厚度或小于背接触层31和吸收层40的组合厚度。也可以根据上述的任何组合调整绝缘体35的大小。例如,绝缘体35的厚度可以介于背接触层31的厚度和吸收层40的厚度之间。在另一实例中,绝缘体35的厚度可以大于背接触层31的厚度且其宽度WB基本上等于沟槽宽度WA。
在其他实施例中,子步骤也可以包括对太阳能电池子结构施加光刻胶。例如,如图5B所示,可以在图5A所示的子结构上方沉积光刻胶材料,该子结构包括位于衬底20上方的背接触层31和穿过背接触层刻划的P1沟槽71,以在子结构上方形成光刻胶层。光刻胶层80可以包括P1沟槽部分80a(即,内衬P1沟槽71的部分光刻胶层80)和剩余部分80b(即,在剩余的背接触层31上方沉积的光刻胶层80的剩余部分)。可以施加遮挡掩模(shadow mask)82以露出P1沟槽71(在图5C中,刻划的沟槽71的边界示出为线X1和X2),并且如图5C所示,可以消除(dissolve)光刻胶层80的P1沟槽部分80a,从而生成图5D中示出的子结构。如图5E所示,然后可以在P1沟槽71内沉积或形成绝缘体35,并且如图5F所示,可以消除光刻胶层80的剩余部分80b,从而生成图5G中示出的子结构。
在其他实施例中,在步骤130中可以使用不同的技术将绝缘体35嵌入到背接触层31中。例如,可以在衬底20上方沉积或形成绝缘体35,然后可以在衬底上并环绕绝缘体35沉积背接触层31。
在步骤140中,在背接触层31和绝缘体35上方沉积吸收层。在绝缘体35的厚度大于背接触层31的厚度的实施例中,绝缘体35可以延伸穿过吸收层40的至少一部分。在一些实施例中,如图2C所示,吸收层材料覆盖绝缘体35的上表面和绝缘体35的侧面的至少一部分。
吸收层40包括诸如p型半导体的任何合适的吸收材料。在一些实施例中,吸收层40包括基于黄铜矿的材料,并且可以是CIGS、CIGSS、CIS或CGS。根据诸如溅射、化学汽相沉积、电沉积等的方法可以在衬底20和背接触层31的上方形成吸收层40。例如,可以通过以下步骤来形成CIGS吸收层:沉积铜、铟和镓的金属前体,然后实施包括将气体状态的硒或含硒化学物质引入金属层中的硒化工艺。在一些实施例中,通过蒸发引入硒。也可以施加将气体状态的硫或含硫化学物质引入CIGS层的硫化工艺。在一些实施例中,吸收层40的厚度可以在约0.3μm到约10μm的范围内。
在一些实施例中,通过化学沉积(例如,化学浴沉积)、PVD、ALD或其他合适的技术在吸收层40上沉积缓冲层45。缓冲层45包括诸如n型半导体的任何合适的缓冲材料。在一些实施例中,缓冲层45可以包括硫化镉(CdS)、硫化锌(ZnS)、硒化锌(ZnSe)、硫化铟(Ⅲ)(In2S3)、硒化铟(In2Se3)或Zn1-xMgxO(例如,ZnO)。其他实施例还包括其他缓冲材料。在一些实施例中,缓冲层45的厚度在约1nm到约500nm的范围内。在形成缓冲层45之后(或在形成吸收层40之后(如果不包括缓冲层)),穿过缓冲层和吸收层40形成P2划线。
在步骤150中,在吸收层40上方沉积前接触层50。在一些实施例中,通过金属有机化学汽相沉积(MOCVD)来沉积前接触层50。在其他实施例中,通过溅射或ALD来沉积前接触层。前接触层50包括诸如金属氧化物(例如,氧化铟)的合适的前接触层材料。在一些实施例中,前接触层包括透明导电氧化物,诸如氧化铟锡(ITO)、掺氟氧化锡(FTO)、掺铝氧化锌(AZO)、掺镓ZnO(GZO)、共掺杂铝和镓ZnO(AGZO)、掺硼ZnO(BZO)、以及它们的组合。在形成前接触层50之后,穿过前接触层50、缓冲层45和吸收层40形成P3划线。
在一些实施例中,在步骤180中,太阳能电池可以经历额外的处理操作以完成器件和/或将器件连接至其他太阳能电池从而形成太阳能电池模块。例如,进一步处理可以包括EVA/丁基应用、层压、后道工序和模块形成。可以以串联或并联的方式将太阳能模块依次连接至其他太阳能模块以形成阵列。
图6是示出根据本发明的CIGS太阳能电池(S01)和没有绝缘体35的CIGS太阳能电池(S02)的仿真的器件效率相对于P1宽度的曲线图。对于S02器件,结果示出了在吸收层具有不同电阻率时的优化的P1宽度,该结果在图6中示出为三条曲线(S02)。数据示出了具有较高电阻率的吸收层的S02器件具有较高的优化的转换效率。该结果也说明了S01器件实现了比S02器件更高的整体转换效率,S02器件的转换效率限于P1宽度介于约25μm至100μm之间时的优化的S02效率。相反,S01器件使死区损耗最小化,同时使较小的P1宽度的优势最大化,从而实现效率的显著提高。在一些实施例中,太阳能电池10可以实现的转换效率为15.2%或更大、15.3%或更大以及15.4%或更大。
根据本发明的太阳能电池、太阳能电池子结构和方法提供了改进的太阳能电池性能。具体地,器件有效地打破了由于P1宽度所导致分流路径损耗和死区损耗之间的折中,提供了开路并阻断穿过P1互连件的分流路径。如图3所示,电流55围绕绝缘体35流动,消除了P1划线中的分流。因此,显著降低或避免了分流损耗,且同时通过使P1互连件的宽度变窄而最小化死区损耗。总之,在此公开的太阳能电池、子结构和用于制造太阳能电池的方法提高了太阳能电池模块的效率,且在现存的太阳能电池制造工艺过程中可以容易地实现该高效和有效的方法。例如,该方法易于与当前的CIGS生产线集成在一起。同样地,公开的方法可以以低附加成本提供显著改进的器件。
在一些实施例中,太阳能电池子结构包括衬底;位于衬底上方的背接触层;位于背接触层中的P1沟槽;以及设置在P1沟槽中的绝缘体。
在一些实施例中,P1沟槽的宽度小于约30μm。
在一些实施例中,P1沟槽的宽度为约25μm或更小。
在一些实施例中,绝缘体填充P1沟槽。
在一些实施例中,绝缘体的宽度基本上等于P1沟槽的宽度。
在一些实施例中,绝缘体的厚度大于背接触层的厚度。
在一些实施例中,太阳能电池子结构也包括位于背接触层上方的吸收层,并且绝缘体的厚度小于背接触层和吸收层的组合厚度。
在一些实施例中,太阳能电池包括衬底;位于衬底上方的背接触层;位于衬底上方且延伸穿过背接触层的绝缘体;位于背接触层和绝缘体上方的吸收层;以及位于吸收层上方的前接触层。
在一些实施例中,绝缘体延伸穿过吸收层的一部分。
在一些实施例中,绝缘体的厚度小于背接触层和吸收层的组合厚度。
在一些实施例中,绝缘体的电阻率为约10000ohm-cm或更大。
在一些实施例中,绝缘体的电阻率为约15000ohm-cm或更大。
在一些实施例中,绝缘体包括二氧化硅。
在一些实施例中,P1沟槽的宽度小于25μm。
在一些实施例中,吸收层包括基于黄铜矿的材料。
在一些实施例中,用于制造太阳能电池的方法包括提供衬底;在其中嵌入有绝缘体的衬底上方提供背接触层;在背接触层和绝缘体上方沉积吸收层;以及在吸收层上方沉积前接触层。
在一些实施例中,提供背接触层的步骤包括在衬底上方沉积背接触层,穿过背接触层刻划P1沟槽以及在P1沟槽中形成绝缘体。
在一些实施例中,提供背接触层的步骤包括在衬底上方沉积背接触层,在背接触层上方沉积光刻胶层,光刻胶层包括P1沟槽部分和剩余部分;利用遮挡掩模露出P1沟槽;消除光刻胶层的P1沟槽部分;在P1沟槽内沉积绝缘体;以及消除光刻胶层的剩余部分。
在一些实施例中,在吸收层沉积步骤之前实施嵌入步骤。
在一些实施例中,吸收层沉积步骤包括前体沉积和硒化。
上面概述了多个实施例的特征,使得本领域普通技术人员可以更好地理解本发明的各个方面。本领域普通技术人员应该理解,他们可以容易地使用本发明作为基础来设计或修改其他用于实施与在此所介绍的实施例相同的目的和/或实现相同优点的工艺和结构。本领域普通技术人员也应该意识到,这种等同构造并没有背离本发明的精神和范围,并且在不背离本发明的精神和范围的情况下,在此他们可以进行多种变化、替换以及改变。
Claims (18)
1.一种太阳能电池子结构,包括:
衬底;
背接触层,位于所述衬底上方;
P1沟槽,位于所述背接触层中;以及
绝缘体,设置在所述P1沟槽中,
其中,所述绝缘体的宽度等于所述P1沟槽的宽度,
所述太阳能电池子结构还包括位于所述背接触层上方的吸收层,其中,所述绝缘体部分地延伸穿入所述吸收层。
2.根据权利要求1所述的太阳能电池子结构,其中,所述P1沟槽的宽度小于30μm。
3.根据权利要求1所述的太阳能电池子结构,其中,所述P1沟槽的宽度为25μm或更小。
4.根据权利要求1所述的太阳能电池子结构,其中,所述绝缘体填充所述P1沟槽。
5.根据权利要求1所述的太阳能电池子结构,其中,所述绝缘体的厚度大于所述背接触层的厚度。
6.根据权利要求1所述的太阳能电池子结构,其中,所述绝缘体的厚度小于所述背接触层和所述吸收层的组合厚度。
7.一种太阳能电池,包括:
衬底;
背接触层,位于所述衬底上方;
绝缘体,位于所述衬底上方并且延伸穿过所述背接触层;
吸收层,位于所述背接触层和所述绝缘体上方,以及
前接触层,位于所述吸收层上方,
其中,所述绝缘体的宽度等于所述背接触层内的P1沟槽的宽度,
其中,所述绝缘体部分地延伸穿入所述吸收层。
8.根据权利要求7所述的太阳能电池,其中,所述绝缘体的厚度小于所述背接触层和所述吸收层的组合厚度。
9.根据权利要求7所述的太阳能电池,其中,所述绝缘体的电阻率为10000ohm-cm或更大。
10.根据权利要求7所述的太阳能电池,其中,所述绝缘体的电阻率为15000ohm-cm或更大。
11.根据权利要求7所述的太阳能电池,其中,所述绝缘体包括二氧化硅。
12.根据权利要求7所述的太阳能电池,其中,所述P1沟槽的宽度小于25μm。
13.根据权利要求7所述的太阳能电池,其中,所述吸收层包括基于黄铜矿的材料。
14.一种用于制造太阳能电池的方法,包括:
提供衬底;
在其中嵌入有绝缘体的所述衬底上方提供背接触层;
在所述背接触层和所述绝缘体上方沉积吸收层;以及
在所述吸收层上方沉积前接触层,
其中,所述绝缘体的宽度等于所述背接触层内的P1沟槽的宽度,
其中,所述绝缘体部分地延伸穿入所述吸收层。
15.根据权利要求14所述的方法,其中,提供所述背接触层的步骤包括:
在所述衬底上方沉积所述背接触层;
穿过所述背接触层刻划所述P1沟槽;以及
在所述P1沟槽内形成所述绝缘体。
16.根据权利要求14所述的方法,其中,提供所述背接触层的步骤包括:
在所述衬底上沉积所述背接触层;
在所述背接触层上沉积光刻胶层,所述光刻胶层包括所述P1沟槽部分和剩余部分;
利用遮挡掩模露出所述P1沟槽部分;
消除所述光刻胶层的所述P1沟槽部分;
在所述P1沟槽内沉积所述绝缘体;以及
消除所述光刻胶层的所述剩余部分。
17.根据权利要求14所述的方法,其中,在所述吸收层沉积步骤之前实施所述嵌入步骤。
18.根据权利要求14所述的方法,其中,所述吸收层沉积步骤包括前体沉积和硒化。
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