CN104914972A - DDR3 power supply device and method - Google Patents

DDR3 power supply device and method Download PDF

Info

Publication number
CN104914972A
CN104914972A CN201510298159.0A CN201510298159A CN104914972A CN 104914972 A CN104914972 A CN 104914972A CN 201510298159 A CN201510298159 A CN 201510298159A CN 104914972 A CN104914972 A CN 104914972A
Authority
CN
China
Prior art keywords
ddr3
power supply
signal
supply module
signal generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510298159.0A
Other languages
Chinese (zh)
Inventor
王振
崔铭航
翟西斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inspur Group Co Ltd
Original Assignee
Inspur Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inspur Group Co Ltd filed Critical Inspur Group Co Ltd
Priority to CN201510298159.0A priority Critical patent/CN104914972A/en
Publication of CN104914972A publication Critical patent/CN104914972A/en
Pending legal-status Critical Current

Links

Landscapes

  • Dc-Dc Converters (AREA)

Abstract

The invention relates to the technical field of power supply of DDR3 interfaces, in particular to a DDR3 power supply device and method. The structure of the power supply module comprises a power supply module PMU, wherein the power supply module PMU is respectively connected with a CA signal generator and a DQ signal generator through lines. According to the invention, through respectively supplying power to the DDR3 DQ group signal and the CA group signal, the jitter influence on DQS and CLK caused by power noise is reduced, and the accuracy of data when DQS samples DQ and CLK samples CA is ensured, so that the time sequence is optimized, and the purpose of increasing the DDR3 working rate is achieved.

Description

A kind of DDR3 power supply device and method
Technical field
The present invention relates to the Power supply technical field of DDR3 interface, particularly a kind of DDR3 power supply device and method.
Background technology
DDR3 is a kind of computer memory specification.It belongs to the memory article of SDRAM family, provide compared to the higher Operating ettectiveness of DDR2 SDRAM and lower voltage, DDR2 SDRAM(tetra-times of data rate SDRAM (Synchronous dynamic random access memory)) succession's (being increased to octuple), be also memory article popular now.
Present main flow DDR3 speed can reach 1600Mbps, the signal risk how changing down increases day by day, shortens the design cycle, is that Hardware Engineer has to problems faced.
Traditional method of supplying power to as shown in Figure 1, directly power to CA and the DQ signal of DDR3 from supply module PMU, such power source supply method, make when high speed data transfer, the jitter impact of power supply noise on CLK and QDS is very large, have impact on the accuracy to CLK and QDS data sampling.
CA:Command and Address, the order in DDR3 and address signal, one way signal.
DQ:Bidirectional data, the data-signal in DDR3, two-way signaling.
DQS:Bidirectional data strobe, the source synchronous clock in DDR3, two-way signaling, be used for sample DQ.
Clock signal in CLK:Clock, DDR3, be used for sample CA, one way signal.
Summary of the invention
In order to solve the problem of prior art, the invention provides a kind of DDR3 power supply device and method, the Power supply of its appropriate design and optimization DDR3 interface, forecasting risk, reduces design and production cost.
The technical solution adopted in the present invention is as follows:
A kind of DDR3 power supply device, comprise supply module PMU, described supply module PMU is respectively by connection CA signal generator and DQ signal generator.
A kind of DDR3 power source supply method draws duplex feeding circuit respectively from supply module PMU, supplies CA signal and DQ signal respectively.
Duplex feeding circuit is parallel with one another, and supply module PMU gives electricity according to the signal of CA signal generator or DQ signal generator respectively.
The beneficial effect that technical scheme provided by the invention is brought is:
The method can reduce the jitter on CLK and QDS brought because of power supply noise to be affected, and ensures that CLK and DQS is to the correctness of data sampling.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the power source supply method schematic diagram of DDR3 under prior art.
Fig. 2 is power source supply method schematic diagram of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Embodiment one
As shown in Figure 2, a kind of DDR3 power supply device of the present embodiment, comprises supply module PMU, and described supply module PMU is respectively by connection CA signal generator and DQ signal generator.
Embodiment two
A kind of DDR3 power source supply method draws duplex feeding circuit respectively from supply module PMU, supplies CA signal and DQ signal respectively.
The scheme of the present embodiment is by powering respectively to DDR3 DQ group signal and CA group signal, the jitter on DQS and CLK reduced because power supply noise brings affects, ensure the accuracy of data during DQS sampling DQ and CLK sampling CA, thus Improving Working Timing, reach the object improving DDR3 operating rate.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (3)

1. a DDR3 power supply device, comprises supply module PMU, and described supply module PMU is respectively by connection CA signal generator and DQ signal generator.
2. a DDR3 power source supply method draws duplex feeding circuit respectively from supply module PMU, supplies CA signal and DQ signal respectively.
3. a kind of DDR3 power source supply method according to claim 2, is characterized in that, described duplex feeding circuit is parallel with one another, and supply module PMU gives electricity according to the signal of CA signal generator or DQ signal generator respectively.
CN201510298159.0A 2015-06-03 2015-06-03 DDR3 power supply device and method Pending CN104914972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510298159.0A CN104914972A (en) 2015-06-03 2015-06-03 DDR3 power supply device and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510298159.0A CN104914972A (en) 2015-06-03 2015-06-03 DDR3 power supply device and method

Publications (1)

Publication Number Publication Date
CN104914972A true CN104914972A (en) 2015-09-16

Family

ID=54084117

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510298159.0A Pending CN104914972A (en) 2015-06-03 2015-06-03 DDR3 power supply device and method

Country Status (1)

Country Link
CN (1) CN104914972A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1487389A (en) * 2002-10-03 2004-04-07 ������������ʽ���� Magnetic disk array device and method for supplying electric power to magnetic disk array device
CN201204452Y (en) * 2008-06-19 2009-03-04 上海益侃微电子有限公司 Power supply structure capable of restraining power supply noise
US20100202123A1 (en) * 2009-02-09 2010-08-12 Sony Corporation Circuit board

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1487389A (en) * 2002-10-03 2004-04-07 ������������ʽ���� Magnetic disk array device and method for supplying electric power to magnetic disk array device
CN201204452Y (en) * 2008-06-19 2009-03-04 上海益侃微电子有限公司 Power supply structure capable of restraining power supply noise
US20100202123A1 (en) * 2009-02-09 2010-08-12 Sony Corporation Circuit board

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
VICHIE: "DDR3总线信号完整性测试需要关注4点", 《HTTPS://WENKU.BAIDU.COM/VIEW/E476B2FD910EF12D2AF9E7FD.HTML》 *

Similar Documents

Publication Publication Date Title
CN101960436B (en) Dual channel memory architecture having reduced interface pin requirements using a double data rate scheme for the address/control signals
CN207490762U (en) A kind of rapid pressure charge pump circuit
CN106970894A (en) A kind of FPGA isomery accelerator cards based on Arria10
CN101686041A (en) Gated clock circuit and gated clock signal generation method
CN104914972A (en) DDR3 power supply device and method
CN103886895B (en) A kind of static RAM sequential control circuit
CN206339931U (en) A kind of low-power consumption MCU core sheet devices based on FLASH
CN103576826B (en) Memory control methods, device and accumulator system
CN101727970B (en) Method for reducing radiation generated by synchronous dynamic random access memory (SDRAM)
CN108268416A (en) A kind of asynchronous interface turns sync cap control circuit
CN103678231A (en) Double-channel parallel signal processing module
CN102403996A (en) Shift circuit of semiconductor device
CN102723108A (en) Asynchronous FIFO memory for clocks
CN102081965B (en) Circuit for generating inner write clock of dynamic random access memory (DRAM)
US10056124B2 (en) Memory control device for repeating data during a preamble signal or a postamble signal and memory control method
CN203573315U (en) Two-channel VPX parallel signal processing module
CN201994074U (en) Circuit generating DRAM (dynamic random access memory) internal write clock
CN205540687U (en) Support synchronous three apparent, board year DDR ultra -low power consumption mainboards
CN204270295U (en) The portable type ground proving installation that a kind of multichannel data stores
CN202650546U (en) Asynchronous FIFO (First In First Out) storage for clock
CN104485930B (en) A kind of efficient clock input control circuit
JP5486812B2 (en) Memory control circuit
CN207008593U (en) A kind of server isomery memory device
CN203911798U (en) Photovoltaic inverter
CN207473595U (en) A kind of interface switching device based on Intel E680T processors

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150916