CN104914139A - Porous upper electrode and humidity sensing parallel-plate capacitance type humidity sensing element capable of performing rapid response - Google Patents
Porous upper electrode and humidity sensing parallel-plate capacitance type humidity sensing element capable of performing rapid response Download PDFInfo
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- CN104914139A CN104914139A CN201510335339.1A CN201510335339A CN104914139A CN 104914139 A CN104914139 A CN 104914139A CN 201510335339 A CN201510335339 A CN 201510335339A CN 104914139 A CN104914139 A CN 104914139A
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Abstract
The invention discloses a porous upper electrode and humidity sensing parallel-plate capacitance type humidity sensing element capable of performing rapid response. The humidity sensing element consists of a porous upper electrode, a porous PI humidity sensing film, a parallel-plate lower electrode, a SiO2 insulating layer and a Si substrate from top to bottom, wherein the porous upper electrode is provided with a plurality of upper electrode holes which are arranged in order, the porous PI humidity sensing film is provided with a plurality of humidity sensing film holes which are arranged in order, the PI humidity sensing film is provided with two lower electrode lead holes which are used for argon welding of lower electrode leads. Firstly, a silicon wafer is cleaned, and is oxidized to form an insulation layer, a lower electrode is subjected to evaporation deposition and is coated with polyimide acid to be subjected to imidization, an upper electrode is subjected to evaporation deposition, a porous upper electrode pattern is etched by phosphoric acid, a porous humidity sensing hole pattern is etched by plasma; the upper electrode is etched by phosphoric acid, a humidity sensing film is etched by plasma to form a scribing channel, a PI humidity sensing film is etched to form the lower electrode lead hole, and finally, the slicing, argon welding and packaging are implemented. The humidity sensing element has the beneficial effect that the responding time is improved to the maximum degree.
Description
Technical field
The invention belongs to moisture measurement and control technology field, relate to a kind of poroid top electrode of response and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element fast.
Background technology
Moisture measurement and control closely correlate to social life, industrial and agricultural production etc.Some field, as respiratory disease diagnosis and treatment, fuel cell car etc., not only needs humidity-sensitive element to have the static characteristicss such as accurate, reliable, also requires that humidity-sensitive element can the transient changing of response measurement ambient humidity fast.The static characteristics of existing humidity-sensitive element is relatively better, but the dynamic perfromance of its marketable product unsatisfactory (usual tens seconds).
Now widely used palisade top electrode parallel plate capacitor formula humidity-sensitive element is many based on Si substrate and polyimide humidity-sensitive film (PI).Polyimide (PI) macromolecule humidity-sensitive film is porous medium, can adsorbed gas, and specific inductive capacity is less, and the specific inductive capacity of aqueous vapor molecule is comparatively large, when after aqueous vapor molecule in humidity-sensitive film absorption soft air, and humidity-sensitive film DIELECTRIC CONSTANT ε
sremarkable linear change, and correspond to the different concentration of humidity-sensitive film absorption aqueous vapor molecule, its value ε
scan be described by Looyenga experimental formula.When ambient humidity becomes large suddenly, due to the reason of aqueous vapor molecular conecentration difference in environment and humidity-sensitive film, in environmental gas, aqueous vapor molecule enters humidity-sensitive film surface from the grid backlash of palisade top electrode, then the humidity-sensitive film region that top electrode grid tooth covers longitudinally is diffused to downwards with horizontal left and right, spread faster, the humidity-sensitive element response time is shorter.Can find out, under the same terms, palisade top electrode grid tooth narrower (overlay area is narrower) and humidity-sensitive film thinner, water vapor diffusion distance is shorter, then water vapor diffusion is faster, and the humidity-sensitive element response time is shorter; Vice versa.
In order to strengthen structure and the even charge distribution of palisade top electrode, palisade top electrode must arrange current-sharing bar, and current-sharing bar width is much larger than palisade top electrode grid facewidth degree, and area accounts for the palisade top electrode total area 40%.The existence of current-sharing bar adds the distance of water vapor diffusion, makes the effect improving humidity-sensitive element dynamic response time by pursuing too small palisade top electrode grid facewidth degree can not be obvious.So, the existence of palisade top electrode current-sharing bar constrains the further improvement of humidity-sensitive element dynamic response time.
Summary of the invention
The object of the present invention is to provide a kind of poroid top electrode of response and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element fast, without the need to current-sharing bar, solve existing palisade top electrode parallel plate capacitor formula humidity-sensitive element must arrange account for top electrode total area significant proportion, wider top electrode current-sharing bar causes water vapor diffusion path long, making to improve the effect of humidity-sensitive element response time by reducing palisade top electrode grid tooth width method can not obvious problem.
The technical solution adopted in the present invention is respectively poroid top electrode, poroid PI humidity-sensitive film, dull and stereotyped bottom electrode, SiO from top to bottom
2insulation course and Si substrate, wherein, poroid top electrode is provided with the top electrode hole of some marshallings, poroid PI humidity-sensitive film is provided with the humidity-sensitive film hole of some marshallings, the upper and lower one_to_one corresponding in humidity-sensitive film hole and top electrode hole forms the diffusion admittance of hydrone, and bottom electrode lead-in wire is connected with bottom electrode argon welding by the bottom electrode fairlead be located on PI humidity-sensitive film.
Further, silicon chip is selected in described Si substrate, and described poroid top electrode and dull and stereotyped bottom electrode are Mo-Al electrode.
Further, the aperture in described top electrode hole is 2 μm, and center, top electrode hole minimum spacing is 4 μm.
Further, described poroid PI humidity-sensitive film is applied through sol evenning machine silicon chip by the acid of pre-configured polyimide, then is formed through imidization, the poroid figure of plasma etching, and its thickness is 0.54 μm, and aperture is 2 μm, with top electrode hole one_to_one corresponding.
The method for making of the poroid top electrode of a kind of quick response and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element, first cleaning silicon chip, silicon chip forms insulation course, evaporation bottom electrode, the acid of bottom electrode coating polyimide, imidization, evaporation top electrode, the poroid figure phosphoric acid etching of top electrode, the poroid figure plasma etching of humidity-sensitive film, uses phosphoric acid etching top electrode, plasma etching humidity-sensitive film formation dicing lane, etching humidity-sensitive film forms bottom electrode fairlead, finally section, argon welding, encapsulation.
Under the invention has the beneficial effects as follows the same terms, poroid top electrode and humidity-sensitive film humidity-sensitive element are compared with palisade top electrode humidity-sensitive element, and the response time can farthest be improved.
Accompanying drawing explanation
The poroid top electrode of Fig. 1 and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element planimetric map;
The poroid top electrode of Fig. 2 and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element structural representation;
The poroid top electrode of Fig. 3 and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element fabrication processing figure;
The poroid top electrode of Fig. 4 and humidity-sensitive film wet sensitive unit top electrode pitch-row schematic diagram;
The poroid top electrode of Fig. 5 and humidity-sensitive film and palisade top electrode humidity-sensitive element dynamic perfromance comparison diagram.
Embodiment
Below in conjunction with embodiment, the present invention is described in detail.
The poroid top electrode of the present invention and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element as depicted in figs. 1 and 2, are respectively poroid top electrode 2, poroid PI humidity-sensitive film 4, dull and stereotyped bottom electrode 7, SiO from top to bottom
2insulation course 8 and Si substrate 9, Si substrate 9 can select silicon chip, poroid top electrode 2 and dull and stereotyped bottom electrode 7 are Mo-Al electrode, wherein, poroid top electrode 2 is provided with the top electrode hole 3 of some marshallings, and the aperture in top electrode hole 3 is preferably 2 μm, and 3, top electrode hole center minimum spacing is preferably 4 μm, poroid PI humidity-sensitive film 4 is provided with the humidity-sensitive film hole 6 of some marshallings, and humidity-sensitive film hole 6 and top electrode hole about 3 one_to_one corresponding form the diffusion admittance of hydrone 1.By etching 2 bottom electrode fairleads 5 that poroid PI humidity-sensitive film 4 is formed, go between for argon welding bottom electrode.
In the present invention, poroid PI humidity-sensitive film 4 is applied through sol evenning machine silicon chip by the acid of pre-configured polyimide, formed through imidization, the poroid figure of plasma etching, its thickness obtains by controlling polyimide acid concentration, coating consumption and sol evenning machine rotations per minute, and preferred thickness is 0.54 μm again.Adopt Mo-Al combination electrode to be the weldability being strengthened contact conductor by the molybdenum (Mo) that adhesiveness is stronger in the present invention, the use of aluminium electrode reduces humidity-sensitive element cost, and adds its life-span.
The manufacture craft of parallel plate capacitor formula humidity-sensitive element of the present invention as shown in Figure 3, first cleaning silicon chip, silicon chip forms insulation course, evaporation bottom electrode, the acid of bottom electrode coating polyimide, imidization, evaporation top electrode, the poroid figure phosphoric acid etching of top electrode, the poroid figure plasma etching of humidity-sensitive film, uses phosphoric acid etching top electrode, plasma etching humidity-sensitive film formation dicing lane, etching humidity-sensitive film forms bottom electrode fairlead, finally section, argon welding, encapsulation.
The poroid top electrode of the present invention and humidity-sensitive film hole avoid palisade top electrode and consider the current-sharing bar that area ratio is large, width is wide that the narrow easy fracture of grid tooth and even charge distribute and arrange, make aqueous vapor molecule directly diffuse to top electrode by top electrode hole and humidity-sensitive film hole and cover humidity-sensitive film region, the evolving path shortens dramatically, and effectively can improve the response time of humidity-sensitive element.
A kind of poroid top electrode of the present invention and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element, area 3mm × 3mm, top electrode active region area 2mm × 2mm, its median pore diameter 2 μm, Fig. 4 illustrates hole center distance S1=S2=4 μm, top electrode area 2.5mm
2; Through verification experimental verification, under all the other the same terms, the dynamic response time of the poroid top electrode of the present invention and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element improves about 40% than existing palisade top electrode parallel plate capacitor formula humidity-sensitive element.
Fig. 5 shows existing palisade top electrode humidity-sensitive element (area 3mm × 3mm, top electrode active region area 2mm × 2mm, wherein grid facewidth degree 2 μm, grid backlash width 2 μm, top electrode area 2.5mm
2, current-sharing bar width 50 μm, accounts for top electrode area ratio 40%) and humidity-sensitive element dynamic perfromance of the present invention compare, wherein, it is 33.2%RH (MgCl that the dynamic Characteristic Data of palisade top electrode humidity-sensitive element derives from 25 DEG C from relative humidity
2saturated salt solution) to wet response test result to the relative humidity liter that is 75.8%RH (NaCl saturated salt solution), dynamic characteristic test is based on saturated salt solution method, equilibration time is 5s, test duration is less than 10s, the dynamic Characteristic Data of poroid top electrode humidity-sensitive element derives from numerical simulation, in figure, ordinate is dimensionless capacitance, and horizontal ordinate is the time.
As seen from Figure 5, the response time of poroid top electrode and humidity-sensitive film humidity-sensitive element is obviously better than palisade top electrode humidity-sensitive element, especially later stage.
The above is only to better embodiment of the present invention, not any pro forma restriction is done to the present invention, every any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong in the scope of technical solution of the present invention.
Claims (5)
1. respond poroid top electrode and a humidity-sensitive film parallel plate capacitor formula humidity-sensitive element fast, it is characterized in that: be respectively poroid top electrode, poroid PI humidity-sensitive film, dull and stereotyped bottom electrode, SiO from top to bottom
2insulation course and Si substrate, wherein, poroid top electrode is provided with the top electrode hole of some marshallings, poroid PI humidity-sensitive film is provided with the humidity-sensitive film hole of some marshallings, the upper and lower one_to_one corresponding in humidity-sensitive film hole and top electrode hole forms the diffusion admittance of aqueous vapor molecule, PI humidity-sensitive film is provided with 2 bottom electrode fairleads, goes between for argon welding bottom electrode.
2., according to a kind of described in the claim 1 poroid top electrode of response and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element fast, it is characterized in that: silicon chip is selected in described Si substrate, described poroid top electrode and dull and stereotyped bottom electrode are Mo-Al electrode.
3., according to a kind of described in the claim 1 poroid top electrode of response and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element fast, it is characterized in that: the aperture in described top electrode hole is 2 μm, center, top electrode hole minimum spacing is 4 μm.
4. according to a kind of described in the claim 1 poroid top electrode of response and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element fast, it is characterized in that: described poroid PI humidity-sensitive film is applied through sol evenning machine silicon chip by the acid of pre-configured polyimide, formed through imidization, the poroid figure of plasma etching, its thickness is 0.54 μm again.
5. according to the method for making of the poroid top electrode of a kind of quick response described in claim 1 and humidity-sensitive film parallel plate capacitor formula humidity-sensitive element, it is characterized in that: first cleaning silicon chip, silicon chip forms insulation course, evaporation bottom electrode, the acid of bottom electrode coating polyimide, imidization, evaporation top electrode, the poroid figure phosphoric acid etching of top electrode, the poroid figure plasma etching of PI humidity-sensitive film, use phosphoric acid etching top electrode, plasma etching humidity-sensitive film formation dicing lane, etching humidity-sensitive film forms bottom electrode fairlead, finally section, argon welding, encapsulation.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3401674A1 (en) * | 2017-05-09 | 2018-11-14 | ams International AG | Capacitive-type humidity sensor and corresponding fabrication method |
| CN110494744A (en) * | 2017-03-31 | 2019-11-22 | 三美电机株式会社 | Humidity sensor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110494744A (en) * | 2017-03-31 | 2019-11-22 | 三美电机株式会社 | Humidity sensor |
| EP3401674A1 (en) * | 2017-05-09 | 2018-11-14 | ams International AG | Capacitive-type humidity sensor and corresponding fabrication method |
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| US11262325B2 (en) | 2017-05-09 | 2022-03-01 | Sciosense B.V. | Sensor semiconductor device |
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