CN104931546A - Rapid responding miniature capacitance type humidity-sensitive element with porous upper electrode and parallel board electrode - Google Patents
Rapid responding miniature capacitance type humidity-sensitive element with porous upper electrode and parallel board electrode Download PDFInfo
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- CN104931546A CN104931546A CN201510329286.2A CN201510329286A CN104931546A CN 104931546 A CN104931546 A CN 104931546A CN 201510329286 A CN201510329286 A CN 201510329286A CN 104931546 A CN104931546 A CN 104931546A
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Abstract
The invention discloses a rapid responding miniature capacitance type humidity-sensitive element with a porous upper electrode and a parallel board electrode. The porous upper electrode, a PI humidity sensing film, the board lower electrode, an SiO2 insulation layer and an Si substrate are arranged from top to bottom, wherein the upper electrode is provided with a plurality of upper electrode pores formed neatly, and a lower electrode lead hole is formed in the PI humidity sensing film. During manufacturing, a wafer is cleaned first, the wafer is oxidized to form the insulation layer, vapor deposition is carried out on the lower electrode, the lower electrode is coated with polyimide acid and subjected to imidization, vapor deposition is carried out on the upper electrode, porous patterns of the upper electrode are etched through phosphoric acid, the phosphoric acid is used to etch the electrode, plasma is used to etch the humidity sensing film to form wafer sliding channels, the plasma is used to etch the humidity sensing film to form the lower electrode lead hole, and slicing, argon welding and packaging are carried out finally. The rapid responding miniature capacitance type humidity-sensitive element with the porous upper electrode and the parallel board electrode has the advantages that the responding time of the humidity-sensitive element with the porous upper electrode can be improved to the largest extent compared with a grid-shaped upper electrode under the same condition.
Description
Technical field
The invention belongs to moisture measurement and control technology field, relate to a kind of miniature quick response poroid top electrode parallel plate capacitor formula humidity-sensitive element.
Background technology
Moisture measurement and control closely correlate to social life, industrial and agricultural production etc.Some field, as respiratory disease diagnosis and treatment, fuel cell car etc., not only needs humidity-sensitive element to have the static characteristicss such as accurate, reliable, also requires that humidity-sensitive element can the transient changing of response measurement ambient humidity fast.The static characteristics of existing humidity-sensitive element is relatively better, but the dynamic perfromance of its marketable product unsatisfactory (usual tens seconds).
Now widely used palisade top electrode parallel plate capacitor formula humidity-sensitive element is many based on Si substrate and polyimide humidity-sensitive film (PI), polyimide (PI) macromolecule humidity-sensitive film is porous medium, can adsorbed gas, and specific inductive capacity is less, and the specific inductive capacity of aqueous vapor molecule is larger, when after aqueous vapor molecule in humidity-sensitive film absorption soft air, humidity-sensitive film DIELECTRIC CONSTANT ε
sremarkable linear change, and correspond to the different concentration of humidity-sensitive film absorption aqueous vapor molecule.When ambient humidity becomes large suddenly, due to the reason of aqueous vapor molecular conecentration difference in environment and humidity-sensitive film, in environmental gas, aqueous vapor molecule enters humidity-sensitive film surface from the grid backlash of palisade top electrode, then the humidity-sensitive film region that top electrode grid tooth covers longitudinally is diffused to downwards with horizontal left and right, spread faster, the humidity-sensitive element response time is shorter.Can find out, under the same terms, palisade top electrode grid tooth narrower (overlay area is narrower) and humidity-sensitive film thinner, water vapor diffusion distance is shorter, then water vapor diffusion is faster, and the humidity-sensitive element response time is shorter; Vice versa.
In order to strengthen structure and the even charge distribution of palisade top electrode, palisade top electrode must arrange current-sharing bar, and current-sharing bar width is much larger than palisade top electrode grid facewidth degree, and area accounts for palisade top electrode total area 30%-40%.The existence of current-sharing bar adds the distance of water vapor diffusion, makes the effect improving humidity-sensitive element dynamic response time by pursuing too small palisade top electrode grid facewidth degree can not be obvious.So, the existence of palisade top electrode current-sharing bar constrains the further improvement of humidity-sensitive element dynamic response time.
Summary of the invention
The object of the present invention is to provide a kind of miniature quick response poroid top electrode parallel plate capacitor formula humidity-sensitive element, without the need to current-sharing bar, solve existing palisade top electrode parallel plate capacitor formula humidity-sensitive element must arrange account for top electrode total area significant proportion, wider top electrode current-sharing bar causes water vapor diffusion path long, making to improve the effect of humidity-sensitive element response time by reducing palisade top electrode grid tooth width method can not obvious problem.
The technical solution adopted in the present invention is respectively poroid top electrode, PI humidity-sensitive film, dull and stereotyped bottom electrode, SiO from top to bottom
2insulation course and Si substrate, wherein, top electrode is provided with the top electrode hole of some marshallings, and PI humidity-sensitive film is provided with 2 bottom electrode fairleads.
Further, silicon chip is selected in described Si substrate, and described top electrode and bottom electrode are Mo-Al electrode.
Further, the aperture in described top electrode hole is 2 μm, and top electrode Kong Jian center minimum spacing is 4 μm.
Further, PI humidity-sensitive film is applied through sol evenning machine silicon chip by the acid of pre-configured polyimide, then is formed through imidization, and its thickness is 0.54 μm.
The manufacture craft of a kind of miniature quick response poroid top electrode parallel plate capacitor formula humidity-sensitive element, first cleaning silicon chip, silicon chip forms insulation course, evaporation bottom electrode, the acid of bottom electrode coating polyimide, imidization, evaporation top electrode, the poroid figure phosphoric acid etching of top electrode, use phosphoric acid etching electrode, plasma etching humidity-sensitive film formation dicing lane, plasma etching PI humidity-sensitive film forms bottom electrode fairlead, finally section, argon welding, encapsulation.
The invention has the beneficial effects as follows and adopt poroid top electrode to substitute existing humidity-sensitive element palisade top electrode, without the need to upper electrode arrangement strengthening and the current-sharing bar of even charge distribution effect, make the diffusion path approximately equal of the aqueous vapor molecule being entered humidity-sensitive film by each hole of top electrode, and can reduce with the minimizing of pitch of holes, under the same terms, poroid top electrode humidity-sensitive element is compared with palisade top electrode humidity-sensitive element, and the response time can farthest be improved.
Accompanying drawing explanation
Fig. 1 poroid top electrode parallel plate capacitor formula humidity-sensitive element planimetric map;
Fig. 2 poroid top electrode parallel plate capacitor formula humidity-sensitive element structural representation;
Fig. 3 poroid top electrode parallel plate capacitor formula humidity-sensitive element fabrication processing figure;
Fig. 4 poroid top electrode parallel plate capacitor formula humidity-sensitive element top electrode pitch-row schematic diagram;
The poroid top electrode of Fig. 5 and palisade top electrode humidity-sensitive element dynamic perfromance comparison diagram.
Embodiment
Below in conjunction with embodiment, the present invention is described in detail.
The present invention's poroid top electrode parallel plate capacitor formula humidity-sensitive element as depicted in figs. 1 and 2, is respectively poroid top electrode 2, PI humidity-sensitive film 4, dull and stereotyped bottom electrode 6, SiO from top to bottom
2insulation course 7 and Si substrate 8, Si substrate 8 can select silicon chip, top electrode 2 and bottom electrode 6 are Mo-Al electrode, wherein, poroid top electrode 2 is provided with the top electrode hole 3 of some marshallings, and the aperture in top electrode hole 3 is preferably 2 μm, and 3, top electrode hole center minimum spacing is preferably 4 μm, by the bottom electrode fairlead 5 that etching PI humidity-sensitive film 4 is formed, go between for argon welding bottom electrode.In the present invention, PI humidity-sensitive film 4 is applied through sol evenning machine silicon chip by the acid of pre-configured polyimide, then is formed through imidization, and its thickness obtains by controlling polyimide acid concentration, coating consumption and sol evenning machine rotations per minute, and preferred thickness is 0.54 μm.Adopt Mo-Al combination electrode to be the weldability being strengthened contact conductor by the molybdenum (Mo) that adhesiveness is stronger in the present invention, the use of aluminium electrode reduces humidity-sensitive element cost, and adds its life-span.When ambient humidity raises, aqueous vapor molecule 1 diffuses into PI humidity-sensitive film 4 through top electrode hole 3, and when ambient humidity reduces, aqueous vapor molecule 1 diffuses into environment from PI humidity-sensitive film 4 through top electrode hole 3.
The manufacture craft of parallel plate capacitor formula humidity-sensitive element of the present invention as shown in Figure 3, first cleaning silicon chip, silicon chip forms insulation course, evaporation bottom electrode, the acid of bottom electrode coating polyimide, imidization, evaporation top electrode, the poroid figure phosphoric acid etching of top electrode, etch electrode by phosphoric acid, plasma etching humidity-sensitive film forms dicing lane, plasma etching PI humidity-sensitive film forms bottom electrode fairlead, finally section, argon welding, encapsulation.
The poroid top electrode of the present invention avoids palisade top electrode and considers the current-sharing bar that area ratio is large, width is wide that the narrow easy fracture of grid tooth and even charge distribute and arrange, each hole is made to enter the water diffusion path of humidity-sensitive film equal, under the prerequisite not increasing cost and process complexity, effectively can improve the response time of humidity-sensitive element.
A kind of poroid top electrode parallel plate capacitor formula humidity-sensitive element of the present invention, area 3mm × 3mm, top electrode active region area 2mm × 2mm, pitch-row as shown in Figure 4, its median pore diameter 2 μm, hole center distance S1=S2=4 μm, top electrode area 2.5mm
2; Through verification experimental verification, under all the other the same terms, the dynamic response time of the present invention's poroid top electrode parallel plate capacitor formula humidity-sensitive element improves at least 30% than existing palisade top electrode parallel plate capacitor formula humidity-sensitive element.
Fig. 5 shows existing palisade top electrode humidity-sensitive element (area 3mm × 3mm, top electrode active region area 2mm × 2mm, wherein grid facewidth degree 2 μm, grid backlash width 2 μm, top electrode area 2.5mm
2, current-sharing bar width 50 μm, accounts for top electrode area ratio 40%) and humidity-sensitive element dynamic perfromance of the present invention compare, wherein, it is 33.2%RH (MgCl that the dynamic Characteristic Data of palisade top electrode humidity-sensitive element derives from 25 DEG C from relative humidity
2saturated salt solution) to wet response test result to the relative humidity liter that is 75.8%RH (NaCl saturated salt solution), dynamic characteristic test is based on saturated salt solution method, equilibration time is 5s, test duration is less than 10s, the dynamic Characteristic Data of poroid top electrode humidity-sensitive element derives from numerical simulation, in figure, ordinate is dimensionless capacitance, and horizontal ordinate is the time.
As seen from Figure 5, the response time of poroid top electrode humidity-sensitive element is obviously better than palisade top electrode humidity-sensitive element, especially later stage.
The above is only to better embodiment of the present invention, not any pro forma restriction is done to the present invention, every any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong in the scope of technical solution of the present invention.
Claims (5)
1. a miniature quick response poroid top electrode parallel plate capacitor formula humidity-sensitive element, is characterized in that: be respectively poroid top electrode, PI humidity-sensitive film, dull and stereotyped bottom electrode, SiO from top to bottom
2insulation course and Si substrate, wherein, top electrode is provided with the top electrode hole of some marshallings, and PI humidity-sensitive film is provided with 2 bottom electrode fairleads.
2., according to a kind of miniature quick response poroid top electrode parallel plate capacitor formula humidity-sensitive element described in claim 1, it is characterized in that: silicon chip is selected in described Si substrate, described top electrode and bottom electrode are Mo-Al electrode.
3., according to a kind of miniature quick response poroid top electrode parallel plate capacitor formula humidity-sensitive element described in claim 1, it is characterized in that: the aperture in described top electrode hole is 2 μm, top electrode Kong Jian center minimum spacing is 4 μm.
4., according to a kind of miniature quick response poroid top electrode parallel plate capacitor formula humidity-sensitive element described in claim 1, it is characterized in that: PI humidity-sensitive film is applied through sol evenning machine silicon chip by the acid of pre-configured polyimide, then is formed through imidization, and its thickness is 0.54 μm.
5. according to the manufacture craft of a kind of miniature quick response poroid top electrode parallel plate capacitor formula humidity-sensitive element described in claim 1, it is characterized in that: first cleaning silicon chip, silicon chip forms insulation course, evaporation bottom electrode, the acid of bottom electrode coating polyimide, imidization, evaporation top electrode, the poroid figure phosphoric acid etching of top electrode, etch electrode by phosphoric acid, plasma etching humidity-sensitive film forms dicing lane, plasma etching PI humidity-sensitive film forms bottom electrode fairlead, finally section, argon welding, encapsulation.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110494744A (en) * | 2017-03-31 | 2019-11-22 | 三美电机株式会社 | Humidity sensor |
| CN112710706A (en) * | 2020-12-08 | 2021-04-27 | 北京智芯微电子科技有限公司 | Humidity sensor |
| CN113390931A (en) * | 2021-05-28 | 2021-09-14 | 苏州锐光科技有限公司 | Upper electrode material for capacitive humidity sensor and preparation method thereof |
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| CN101629927A (en) * | 2009-08-13 | 2010-01-20 | 上海交通大学 | Porous aluminum oxide film humidity-dependent sensor preparation method |
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| CN103134837A (en) * | 2011-12-02 | 2013-06-05 | 意法半导体亚太私人有限公司 | Tunable humidity sensor with integrated heater |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110494744A (en) * | 2017-03-31 | 2019-11-22 | 三美电机株式会社 | Humidity sensor |
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