CN103076372A - Capacitive-type humidity sensor - Google Patents
Capacitive-type humidity sensor Download PDFInfo
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- CN103076372A CN103076372A CN2012105898943A CN201210589894A CN103076372A CN 103076372 A CN103076372 A CN 103076372A CN 2012105898943 A CN2012105898943 A CN 2012105898943A CN 201210589894 A CN201210589894 A CN 201210589894A CN 103076372 A CN103076372 A CN 103076372A
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Abstract
The invention discloses a capacitive-type humidity sensor which comprises a lower silicon wafer, lower heaters, lower metal layers, a lower passivation layer, a lower humidity sensing material layer, an upper humidity sensing material layer, an upper passivation layer, upper metal layers and an upper silicon wafer, wherein a lower silicon wafer insulating layer is arranged on the lower silicon wafer; the lower heaters are arranged on the lower silicon wafer insulating layer; a lower heater insulating layer is arranged among the lower heaters and above the lower heaters; the lower heater insulating layer, the lower metal layers, the lower passivation layer and the lower humidity sensing material layer are connected in sequence from bottom to top; an upper silicon wafer insulating layer is arranged on the upper silicon wafer; the upper silicon wafer insulating layer, the upper metal layers, the upper passivation layer and the upper humidity sensing material layer are connected in sequence from top to bottom; an air gap is formed between the lower humidity sensing material layer and the upper humidity sensing material layer; and the lower metal layer and the upper metal layer are bonded by an indium salient point. The capacitive-type humidity sensor, provided by the invention, has the advantages that the heating is uniform, the temperature ununiformity, caused by the longitudinal temperature gradient, can be overcome, the temperature distribution is easy to control, and the response speed is high.
Description
Technical field
The present invention relates to micro electronmechanical field, relate in particular to a kind of capacitance type humidity sensor.
Background technology
Silicon microelectromechanicgyroscope system (MEMS) grows up on the microelectric technique basis, ability with low cost, high precision, mass manufacturing microsensor, and microminiaturization has brought the serial advantages such as low in energy consumption, that inertia is little, thermal response time is short, for the humidity sensor development that is applied to sonde provides opportunity.But, the low temperature rugged surroundings that face in the atmospheric envelope, and cloudy layer passes through the quick environment that causes and changes and still brought huge challenge for the development of MEMS sounding humidity sensor.
Vaisala company has developed a kind of capacitance type humidity sensor with heating arrangement, with the reply Low Temperature Problems; And in order to improve response speed, 2000, the people such as UKsong Kang proposed a kind of high speed sandwich structure humidity sensor by optimized medium layer structure; The people such as Ji-Hong Kim also by optimizing upper electrode arrangement and dielectric layer structure, have proposed a kind of humidity sensor structure of quick response.But, existing humidity sensor still exist the heating inhomogeneous, longitudinal temperature gradient is large, Temperature Distribution is wayward and response speed waits defective slowly.
Summary of the invention
The technical problem to be solved in the present invention is, have for humidity sensor in the prior art that heating is inhomogeneous, longitudinal temperature gradient is large, Temperature Distribution is wayward and response speed waits defects slowly, a kind of homogeneous heating is provided, can overcomes the capacitance type humidity sensor of the easy to control and fast response time of temperature non, Temperature Distribution that longitudinal temperature gradient brings.
The technical solution adopted for the present invention to solve the technical problems is: a kind of capacitance type humidity sensor comprises bottom silicon chip, lower well heater, lower metal layer, lower passivation layer, lower wet sensory material layer, upper wet sensory material layer, upper passivation layer, upper metal level and top silicon chip from top to bottom successively;
The bottom silicon chip is provided with the lower silicon slice insulation course, and lower well heater is located on the lower silicon slice insulation course, and between the lower well heater and above be provided with lower heater insulation layer; Lower heater insulation layer, lower metal layer, lower passivation layer and lower wet sensory material layer link to each other from bottom to up successively;
The top silicon chip is provided with the silicon chip insulation course, and upward silicon chip insulation course, upper metal level, upper passivation layer link to each other from top to bottom successively with upper wet sensory material layer;
Be provided with air-gap between lower wet sensory material layer and the upper wet sensory material layer;
Between lower metal layer and the upper metal level by the indium bump bonding;
Be provided with the first through hole and the second through hole on the silicon chip of top.
In technical scheme of the present invention, lower passivation layer, lower wet sensory material layer, upper wet sensory material layer and upper passivation layer form compound medium layer, wherein, upper passivation layer links to each other with upper metal level, lower passivation layer links to each other with lower metal layer, and be provided with air-gap between lower wet sensory material layer and the upper wet sensory material layer, thus lower metal layer, compound medium layer and the common composition of upper metal level can two-sided sense wet capacity plate antenna structure; When air enters air-gap, all contact with lower wet sensory material layer with upper wet sensory material layer, vapour molecule contained in the air spreads in wet sensory material from two simultaneously, the wet sensory material specific inductive capacity changes, the specific inductive capacity that causes whole compound medium layer changes, and then cause the electric capacity of the wet capacity plate antenna structure of two-sided sense to change, by the measurement to electric capacity, just can obtain humidity.Therefore, the wet capacity plate antenna structure of two-sided sense has also been accelerated the response speed of described capacitance type humidity sensor in the technical scheme of the present invention when guaranteeing device sensitivity.
In technical scheme of the present invention, the lower metal layer of described capacitance type humidity sensor and upper metal level form by top silicon chip and bottom wafer bonding, adopt low temperature aluminium-indium eutectic bonding technology during bonding, utilize the indium salient point to finish, when guaranteeing processing compatibility, also realized the wafer level packaging of sensor construction and device like this.
In addition, in technical scheme of the present invention, be provided with the first through hole and the second through hole on the silicon chip of top, be convenient to like this from the first through hole, draw the top crown electrode, from the second through hole, draw the bottom crown electrode.
As a kind of improvement to technical scheme of the present invention, also be provided with upper heater on the upper silicon chip insulation course, and between the upper heater and top is provided with the upper heater insulation course; The upper heater insulation course is located on the metal level.Hence one can see that, lower silicon slice insulation course and upper silicon chip insulation course are respectively equipped with lower well heater and upper heater in capacitance type humidity sensor of the present invention, lower well heater and upper heater form three-dimensional heater structure, spot heating by this three-dimensional heater structure, so that the diffusion motion of hydrone accelerates, therefore compare with plane heating structure of the prior art, the heating of capacitance type humidity sensor of the present invention is more even, and can overcome the temperature non that longitudinal temperature gradient brings, and Temperature Distribution more easy to control.
As a kind of improvement to technical scheme of the present invention, lower passivation layer is silicon nitride layer.
As a kind of improvement to technical scheme of the present invention, upper passivation layer is silicon nitride layer.
In technical scheme of the present invention; upper passivation layer and lower passivation layer all are coated on respectively the surface of metal level and lower metal layer; upper passivation layer and lower passivation layer are silicon nitride layer; and silicon nitride has high strength and resistant to elevated temperatures advantage; and its antioxygenic property and fine corrosion resistance; therefore energy get up the top crown electrode on upper metal level and the lower metal layer and bottom crown electrode protection, thereby can prolong to a certain extent the serviceable life of described capacitance type humidity sensor.
In technical scheme of the present invention, adopt conventional in the art silicon chip, well heater and the wet sensory material can to realize the technical program, and other are not specifically noted, be prior art.
Therefore, beneficial effect of the present invention is for providing a kind of capacitance type humidity sensor, and this sensor homogeneous heating can overcome the temperature non that longitudinal temperature gradient brings, and Temperature Distribution is easy to control, and its fast response time.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the structural representation of capacitance type humidity sensor of the present invention;
Now that the label declaration in the accompanying drawing is as follows: 1 is the bottom silicon chip, and 2 is the lower silicon slice insulation course, and 3 is lower well heater, 4 is lower heater insulation layer, and 5 is lower metal layer, and 6 is lower passivation layer, 7 is lower wet sensory material layer, and 8 is upper wet sensory material layer, and 9 is upper passivation layer, 10 is upper metal level, and 11 is the upper heater insulation course, and 12 is upper heater, 13 is upper silicon chip insulation course, and 14 is the top silicon chip, and 15 is the indium salient point, 16 is air-gap, and 17 is the first through hole, and 18 is the second through hole.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
The preferred embodiment of the present invention is as follows:
As shown in Figure 1, described capacitance type humidity sensor comprises bottom silicon chip 1, lower silicon slice insulation course 2, lower well heater 3, lower heater insulation layer 4, lower metal layer 5, lower passivation layer 6, lower wet sensory material layer 7, upper wet sensory material layer 8, upper passivation layer 9, upper metal level 10, upper heater insulation course 11, upper heater 12, upper silicon chip insulation course 13 and top silicon chip 14 from top to bottom successively; Wherein, lower silicon slice insulation course 2 is located on the bottom silicon chip 1, and lower well heater 3 is located on the lower silicon slice insulation course 2, and lower heater insulation layer 2 be located between the lower well heater 3 with and the top; In addition, lower heater insulation layer 4, lower metal layer 5, lower passivation layer 6 and lower wet sensory material layer 7 link to each other from bottom to up successively.
Upper silicon chip insulation course 13 is located on the top silicon chip 14, and upper heater 12 is positioned on the silicon chip insulation course 13, and upper heater insulation course 11 is located between the upper heater 12 and the top of upper heater 12; Upper heater insulation course 11, upper metal level 10, upper passivation layer 9 and upper wet sensory material layer 8 link to each other from top to bottom successively.
Leave air-gap 16 between upper wet sensory material layer 8 and the lower wet sensory material layer 7, upper metal level 10 and lower metal layer 5 adopt low temperature aluminium-indium eutectic bonding technology and utilize indium salient point 15 bondings by top silicon chip 14 and bottom silicon chip 1; In addition, top silicon chip 14 is provided be used to first through hole 17 and the second through hole 18 that causes the bottom crown electrode of drawing the top crown electrode.
In the present embodiment, lower passivation layer 6 and upper passivation layer 9 are silicon nitride layer.
At last, the manufacturing process of the described capacitance type humidity sensor of the present embodiment is: at first make bottom silicon chip 1: choose silicon chip and do bottom silicon chip 1 as backing material, grow layer of oxide layer as lower silicon slice insulation course 2 at bottom silicon chip 1, and on lower silicon slice insulation course 2 depositing polysilicon, photoetching, corrosion form lower well heater 3, then be deposited on the surface deposition dielectric layer by chemical meteorology, form lower heater insulation layer 4; Next form lower metal layer 5 by evaporation or splash-proofing sputtering metal and photoetching, corrosion, deposit silicon nitride again, photoetching, corrosion form lower passivation layer 6, form lower wet sensory material layer 7 by spin coating, photoetching, corrosion again.Then make top silicon chip 14: choose silicon chip and do top silicon chip 14 as backing material, silicon chip insulation course 13 in the 14 growth layer of oxide layer conducts of top silicon chip, and on upper silicon chip insulation course 13 depositing polysilicon, photoetching, corrosion forms upper heater 12, then be deposited on the surface deposition dielectric layer by chemical meteorology, form upper heater insulation course 11, next by evaporation or splash-proofing sputtering metal and photoetching, erode away metal level 10, pass through deposit silicon nitride, photoetching, corrosion forms upper passivation layer 9, again by spin coating, photoetching, corrosion forms upper wet sensory material layer 8, then by back side photoetching, anisotropic etch goes out the first through hole 17, the second through hole 18; By aluminium-indium eutectic bonding technology, with indium salient point 15 bonding top silicon chip 14 and bottom silicon chips 1, and between lower wet sensory material layer 7 and upper wet sensory material layer 8, form air-gap 16 at last.
Should be understood that, for those of ordinary skills, can be improved according to the above description or conversion, and all these improvement and conversion all should belong to the protection domain of claims of the present invention.
Claims (4)
1. capacitance type humidity sensor, it is characterized in that, comprise successively from top to bottom bottom silicon chip (1), lower well heater (3), lower metal layer (5), lower passivation layer (6), lower wet sensory material layer (7), upper wet sensory material layer (8), upper passivation layer (9), upper metal level (10) and top silicon chip (14);
Described bottom silicon chip (1) is provided with lower silicon slice insulation course (2), and described lower well heater (3) is located on the lower silicon slice insulation course (2), and between lower well heater (3) and the top be provided with lower heater insulation layer (4); Described lower heater insulation layer (4), lower metal layer (5), lower passivation layer (6) and lower wet sensory material layer (7) link to each other from bottom to up successively;
Described top silicon chip (14) is provided with silicon chip insulation course (13), and upward silicon chip insulation course (13), upper metal level (10), upper passivation layer (9) link to each other from top to bottom successively with upper wet sensory material layer (8);
Be provided with air-gap (16) between described lower wet sensory material layer (7) and the upper wet sensory material layer (8);
Between described lower metal layer (5) and the upper metal level (10) by indium salient point (15) bonding;
Be provided with the first through hole (17) and the second through hole (18) on the described top silicon chip (14).
2. capacitance type humidity sensor according to claim 1 is characterized in that, also is provided with upper heater (12) on the described upper silicon chip insulation course (13), and between the upper heater (12) and top is provided with upper heater insulation course (11); Described upper heater insulation course (11) is located on the metal level (10).
3. capacitance type humidity sensor according to claim 1 is characterized in that, described lower passivation layer (6) is silicon nitride layer.
4. according to claim 1 or 3 described capacitance type humidity sensors, it is characterized in that, described upper passivation layer (9) is silicon nitride layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210589894.3A CN103076372B (en) | 2012-12-29 | 2012-12-29 | Capacitive-type humidity sensor |
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| CN201210589894.3A CN103076372B (en) | 2012-12-29 | 2012-12-29 | Capacitive-type humidity sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104634833A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS capacitance-type relative humidity sensor and preparation method thereof |
| CN106872536A (en) * | 2017-01-19 | 2017-06-20 | 陕西科技大学 | A kind of capacitive moisture sensor based on porous humidity-sensitive film and preparation method thereof |
| CN107257923A (en) * | 2015-02-27 | 2017-10-17 | Em微电子-马林有限公司 | Humidity sensor with thermal modules |
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| CN1357759A (en) * | 2002-01-11 | 2002-07-10 | 东南大学 | Capacity humidometer |
| CN101308110A (en) * | 2008-07-11 | 2008-11-19 | 中国电子科技集团公司第四十九研究所 | Low-power consumption double module integrated humidity sensitive chip with heating function and its manufacture method |
| CN101398402A (en) * | 2004-09-08 | 2009-04-01 | 株式会社日本自动车部品综合研究所 | Physical quantity sensor and method for manufacturing the same |
| CN102253091A (en) * | 2011-04-19 | 2011-11-23 | 东南大学 | Capacitive relative humidity sensor based on graphene oxide |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1357759A (en) * | 2002-01-11 | 2002-07-10 | 东南大学 | Capacity humidometer |
| CN101398402A (en) * | 2004-09-08 | 2009-04-01 | 株式会社日本自动车部品综合研究所 | Physical quantity sensor and method for manufacturing the same |
| CN101308110A (en) * | 2008-07-11 | 2008-11-19 | 中国电子科技集团公司第四十九研究所 | Low-power consumption double module integrated humidity sensitive chip with heating function and its manufacture method |
| CN102253091A (en) * | 2011-04-19 | 2011-11-23 | 东南大学 | Capacitive relative humidity sensor based on graphene oxide |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107257923A (en) * | 2015-02-27 | 2017-10-17 | Em微电子-马林有限公司 | Humidity sensor with thermal modules |
| CN104634833A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS capacitance-type relative humidity sensor and preparation method thereof |
| CN104634833B (en) * | 2015-02-28 | 2017-09-26 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS capacitive relative humidity sensor and preparation method thereof |
| CN106872536A (en) * | 2017-01-19 | 2017-06-20 | 陕西科技大学 | A kind of capacitive moisture sensor based on porous humidity-sensitive film and preparation method thereof |
| CN106872536B (en) * | 2017-01-19 | 2019-04-23 | 陕西科技大学 | A kind of capacitive moisture sensor and preparation method thereof based on porous humidity-sensitive film |
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