CN1049019C - γ射线辐照制备金属镍薄膜的方法 - Google Patents
γ射线辐照制备金属镍薄膜的方法 Download PDFInfo
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- CN1049019C CN1049019C CN96101060A CN96101060A CN1049019C CN 1049019 C CN1049019 C CN 1049019C CN 96101060 A CN96101060 A CN 96101060A CN 96101060 A CN96101060 A CN 96101060A CN 1049019 C CN1049019 C CN 1049019C
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- nickel film
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- aqueous solution
- metal nickel
- gamma ray
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000002184 metal Substances 0.000 title claims description 20
- 229910052751 metal Inorganic materials 0.000 title claims description 20
- 229910052759 nickel Inorganic materials 0.000 title claims description 19
- 230000005251 gamma ray Effects 0.000 title abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 23
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 235000019257 ammonium acetate Nutrition 0.000 claims abstract description 8
- 239000005695 Ammonium acetate Substances 0.000 claims abstract description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229940043376 ammonium acetate Drugs 0.000 claims abstract description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000007864 aqueous solution Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001453 nickel ion Inorganic materials 0.000 claims description 4
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 3
- 229940078494 nickel acetate Drugs 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010437 gem Substances 0.000 claims description 2
- 229910001751 gemstone Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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Abstract
本发明制备金属镍薄膜的方法,是把衬底浸在含有一定浓度醋酸镍、异丙醇、醋酸铵和氨水的水溶液中,置于γ射线源中辐照3×104-5×105Gy,能获得膜厚可控的镜面状金属镍薄膜,该方法可在常温常压下操作,工艺简单易行,无论是导电或不导电的衬底,均可一步完成金属镍薄膜的生长。
Description
本发明涉及金属镍薄膜制备方法和γ射线辐照应用技术。
现有制备金属镍薄膜的方法一般采用真空蒸发、真空溅射或电镀,但真空蒸发和真空溅射的设备要求较高,可使用的衬底尺寸有限,形状不能复杂;电镀虽然设备简单但要求衬底必须导电。为了用电镀法在绝缘的高聚物或玻璃衬底上生长镍薄膜,必须先采用化学镀方法在相应衬底上镀上一层导电涂层,然后再进行电镀,工艺麻烦,不能一步完成,且镀层质量难以保证。目前尚未见到将γ射线辐照用于金属成膜的报导。
本发明的目的是,提出一种采用γ射线辐照法、在含镍离子的液相环境中、在导电或不导电的衬底上一步完成生长金属镍薄膜的方法。
这种γ射线辐照制备金属镍薄膜的方法,其特征是在液相环境中用水合电子作还原剂,该方法包括以下步骤:
(1)配制如下组成的含镍盐水溶液(单位为摩尔/升):
醋酸镍 0.01-0.10
异丙醇 1-2
醋酸铵 0.05-0.10
氨 水 0.5-1.0
(2)把欲生长金属镍薄膜的衬底放入上述含镍水溶液中;
(3)将放置有衬底的含镍水溶液置于γ射线源中辐照,控制辐照剂量为3×104-5×105Gy。
由于含有镍离子的水溶液在受到γ射线辐照时,产生强还原剂即水合电子,它将镍离子逐级还原成镍原子,在生成金属镍团簇粒子的同时在衬底上沉积形成金属镍薄膜。采用本发明γ射线辐照制备金属镍薄膜的方法,不论衬底导电与否,均可一步生成金属镍薄膜,适用的衬底材料包括玻璃、高聚物、陶瓷、宝石、半导体硅、二氧化硅和金属等。本发明方法可在常温常压下操作,工艺简单易行,生成的金属镍薄膜厚度一般可控制在几百至几千埃范围内,根据需要,可通过调节溶液浓度和辐照剂量使膜厚增加,膜层表面光亮呈镜面状。本发明可适合于任何衬底形状在其表面成膜,特别是复杂形状的衬底。经X-射线衍射慢扫描测定,镍膜的晶粒度可在20--100nm之间变化。
以下给出本发明方法的几个实施例:
实施例1:
取3.5克醋酸镍、40毫升异丙醇、3.1克醋酸铵和38毫升浓氨水,配制成400毫升含镍水溶液。将尺寸为26mm×76mm×1mm双面洁净的载玻片作为衬底,置于上述含镍水溶液中,放置于7×104居里的60Co γ射线源近中心区(剂量率为70Gy/分)辐照,辐照剂量为7×104Gy。可获得均匀的镜面金属镍薄膜。
实施例2:
取7.0克醋酸镍、40毫升异丙醇、3.1克醋酸铵和38毫升浓氨水,配制成400毫升含镍水溶液。以尺寸为30mm×80mm×0.1mm表面洁净的聚乙烯带作为衬底,浸于上述含镍水溶液中,置于7×104居里的60Co γ射线源近中心区(剂量率为70Gy/分)辐照,辐照剂量为7×104Gy,可获得均匀的镜面金属镍薄膜。
实施例3:
取0.75克醋酸镍、40毫升异丙醇、3.1克醋酸铵和50毫升浓氨水,配制成400毫升含镍水溶液。以26mm×76mm×1mm双面洁净的载玻片作为衬底,放入上述含镍水溶液中,置于7×104居里的60Co γ射线源近中心区(剂量率为70Gy/分)辐照,辐照剂量为3×105Gy,可获得均匀的镜面金属镍薄膜。
实施例4:
取4.4克醋酸镍、40毫升异丙醇、1.9克醋酸铵和40毫升浓氨水配制成500毫升含镍水溶液。分别以直径为15mm经过抛光的白宝石和20mm×30mm×1.5mm的洁净不锈钢作衬底,放入上述含镍水溶液中,置于7×104居里的60Coγ射线源近中心区(剂量率为70Gy/分)辐照,辐照剂量为5×106Gy,可获得均匀的镜面金属镍薄膜。
实施例5:
取8.8克醋酸镍、40毫升异丙醇、3.8克醋酸铵和60毫升浓氨水配制成500毫升含镍水溶液。以直径为40mm的硅片作衬底,放入上述含镍水溶液中,置于7×104居里的60Co γ射线源近中心区(剂量率为70Gy/分)辐照,辐照剂量为5×105Gy,可获得均匀的镜面金属镍薄膜。
Claims (2)
1.一种金属镍薄膜的制备方法,其特征在于将衬底置于含有镍离子的水溶液中,以γ射线辐照3×104-5×105Gy,所述含镍离子的水溶液中含有摩尔/升的下列物质:
醋酸镍 0.01-0.10
异丙醇 1-2
醋酸铵 0.05-0.10
氨 水 0.5-1.0。
2.如权利要求1所述金属镍薄膜的制备方法,特征在于所述衬底材料包括玻璃、高聚物、陶瓷、宝石、半导体硅、二氧化硅和金属。
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CN1053713C (zh) * | 1997-12-08 | 2000-06-21 | 中国科学院感光化学研究所 | 光诱导绝缘体表面金属化方法 |
CN101684551B (zh) * | 2008-09-27 | 2012-10-17 | 比亚迪股份有限公司 | 一种表面金属化的非金属件及其制造方法 |
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CN1040398A (zh) * | 1989-06-15 | 1990-03-14 | 机械电子工业部武汉材料保护研究所 | 化学镀覆高耐蚀性非晶态镍磷合金的溶液及方法 |
CN1094456A (zh) * | 1993-04-26 | 1994-11-02 | 机械电子工业部北方设计研究院 | 一种镍磷合金非晶镀方法 |
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CN1040398A (zh) * | 1989-06-15 | 1990-03-14 | 机械电子工业部武汉材料保护研究所 | 化学镀覆高耐蚀性非晶态镍磷合金的溶液及方法 |
CN1094456A (zh) * | 1993-04-26 | 1994-11-02 | 机械电子工业部北方设计研究院 | 一种镍磷合金非晶镀方法 |
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