CN104900621A - Chip soldering structure of plastic-package IPM - Google Patents
Chip soldering structure of plastic-package IPM Download PDFInfo
- Publication number
- CN104900621A CN104900621A CN201410076944.7A CN201410076944A CN104900621A CN 104900621 A CN104900621 A CN 104900621A CN 201410076944 A CN201410076944 A CN 201410076944A CN 104900621 A CN104900621 A CN 104900621A
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- CN
- China
- Prior art keywords
- chip
- lead frame
- solder
- solder side
- soldering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Provided is a chip soldering structure of a plastic-package IPM. The chip soldering structure comprises chips and a lead frame connected with both sides of the chips. The lead frame is equipped with a soldering surface on which the chips are soldered. The chips are soldered on the soldering surface of the lead frame through solder. The soldering surface is a non-planar surface and continuous multi-point contact is formed in the cross section of a contact surface of the soldering surface and the solder. According to the chip soldering structure of the plastic-package IPM, the soldering surface of the lead frame is designed as the non-planar surface such that the continuous multi-point contact is formed in the cross section of the contact surface of the soldering surface and the solder. As a result, in a soldering process, the solder melts under the effect of high temperature so as to fully fill a groove on the soldering surface of the lead frame, thereby increasing contact area between the chips and the lead frame and improving a chip soldering effect.
Description
Technical field
The present invention relates to power semiconductor device, particularly relate to the chip welded structure of a kind of plastic sealed IPM.
Background technology
Plastic sealed IPM(Intelligent Power Module, Intelligent Power Module), be the Novel control module that igbt chip and drive circuit, control circuit and overcurrent, under-voltage, short circuit, the protective circuit such as overheated are integrated in one.It is a kind of complexity, advanced power model, automatically can realize overcurrent, under-voltage, short circuit and the complicated protection function such as overheated, thus have intelligent characteristic.Simultaneously it has the advantages such as low cost, miniaturization, highly reliable, easy use, and be widely used in the fields such as frequency-conversion domestic electric appliances, inverter, Industry Control, Social benefit and economic benefit is very considerable.
But, existing plastic sealed IPM, as shown in Figure 1, the igbt chip 1 ' of its inside and diode chip for backlight unit 2 ' are all welded on lead frame 3 ', consider for heat radiation, the surface planarity of lead frame 3 ' is very high, but, consequently leads to igbt chip 1 ' and diode chip for backlight unit 2 ' when welding with lead frame 3 ', its bonding area is only confined to the size of chip, and the chip in plastic sealed IPM is very little (being generally approximately 3mm × 3mm), therefore, chip is probably fixed insecure on this limited area, destroyed in the technique in later stage, thus affect product quality.
In sum, the chip welded structure designing a kind of safer reliable plastic sealed IPM is needed.
Summary of the invention
The problem that the present invention solves is to provide the chip welded structure of a kind of safe and reliable plastic sealed IPM.
For solving the problem, present invention is disclosed the chip welded structure of a kind of plastic sealed IPM, comprise chip and lead frame, described lead frame is connected to the both sides of described chip, described lead frame has for carrying out with described chip the solder side that welds, described chip is welded on the solder side of described lead frame by solder, and described solder side is on-plane surface, and the cross section of the contact-making surface of described solder side and described solder is continuous print Multi-contact.
Preferably, the cross section of described solder side is wavy.
Preferably, the cross section of described solder side is continuous print dentation.
Preferably, the cross section of described solder side is the oval dome-shaped of continuous print.
Preferably, described chip is igbt chip, diode chip for backlight unit.
Compared with prior art, the present invention has the following advantages: the chip welded structure of disclosed plastic sealed IPM, comprise chip and lead frame, described lead frame is connected to the both sides of described chip, described lead frame has for carrying out with described chip the solder side that welds, described chip is welded on the solder side of described lead frame by solder, and described solder side is on-plane surface, and the cross section of the contact-making surface of described solder side and described solder is continuous print Multi-contact.The chip welded structure of disclosed plastic sealed IPM, by the solder side of described lead frame is designed to on-plane surface, the cross section of the contact-making surface of described solder side and described solder is made to form continuous print Multi-contact, setting like this, in welding process, solder melts by the impact of high temperature, thus fills up in the solder side upper groove of described lead frame, increase the contact area between described chip and described lead frame, improve the welding effect of described chip.
Accompanying drawing explanation
Fig. 1 is the chip welded structure schematic diagram of existing plastic sealed IPM;
Fig. 2 is the cross section of the solder side of lead frame in the preferred embodiment of the present invention is wavy structural representation;
The structural representation of Fig. 3 to be the cross section of the solder side of lead frame in the preferred embodiment of the present invention be continuous print dentation.
Embodiment
Existing plastic sealed IPM, as shown in Figure 1, the igbt chip 1 ' of its inside and diode chip for backlight unit 2 ' are all welded on lead frame 3 ', and in figure, dash area is solder.Consider for heat radiation, the surface planarity of lead frame 3 ' is very high, but, consequently leads to igbt chip 1 ' and diode chip for backlight unit 2 ' when welding with lead frame 3 ', its bonding area is only confined to the size of chip, and the chip in plastic sealed IPM is very little (being generally approximately 3mm × 3mm), therefore, chip is probably fixed insecure on this limited area, destroyed in the technique in later stage, thus affects product quality.
In view of the above-mentioned problems in the prior art, present invention is disclosed the chip welded structure of a kind of plastic sealed IPM, comprise chip and lead frame, described lead frame is connected to the both sides of described chip, described lead frame has for carrying out with described chip the solder side that welds, described chip is welded on the solder side of described lead frame by solder, and described solder side is on-plane surface, and the cross section of the contact-making surface of described solder side and described solder is continuous print Multi-contact.
Preferably, the cross section of described solder side is wavy.
Preferably, the cross section of described solder side is continuous print dentation.
Preferably, the cross section of described solder side is the oval dome-shaped of continuous print.
Preferably, described chip is igbt chip, diode chip for backlight unit.
The chip welded structure of disclosed plastic sealed IPM, by the solder side of described lead frame is designed to on-plane surface, the cross section of the contact-making surface of described solder side and described solder is made to form continuous print Multi-contact, setting like this, in welding process, solder melts by the impact of high temperature, thus fills up in the solder side upper groove of described lead frame, increase the contact area between described chip and described lead frame, improve the welding effect of described chip.
Below in conjunction with accompanying drawing, the technical scheme in the embodiment of the present invention is described in detail.
As shown in Figure 2, present invention is disclosed the chip welded structure of a kind of plastic sealed IPM, comprise igbt chip 1, diode chip for backlight unit 2 and lead frame 3, lead frame 3 is connected to the both sides of igbt chip 1, diode chip for backlight unit 2, lead frame 3 has for carrying out with igbt chip 1, diode chip for backlight unit 2 solder side 31 that welds, igbt chip 1, diode chip for backlight unit 2 are welded on the solder side 31 of lead frame 3 by solder, and in figure, dash area is solder.In a preferred embodiment of the invention, solder side 31 is on-plane surface, and solder side 31 is continuous print Multi-contact with the cross section of the contact-making surface of solder.
Particularly, the cross section of solder side 31 is wavy.Setting like this, multiple groove is formed between solder side 31 and igbt chip 1, diode chip for backlight unit 2, in welding process, solder melts by the impact of high temperature, thus fill up in the groove on solder side 31, increase igbt chip 1, contact area between diode chip for backlight unit 2 and lead frame 3, improve the welding effect of igbt chip 1, diode chip for backlight unit 2, increase the firmness of chip.
In like manner, as shown in Figure 3, the cross section of solder side 31 is continuous print dentation, and welding effect is identical with the welding effect when the cross section of solder side 31 is wavy.Certainly, the cross section of solder side 31 can also be the oval dome-shaped of continuous print, or be deformed into continuous print trapezoidal shape or continuous print rectangular-shaped, all can reach same technique effect, not repeat them here.
The chip welded structure of disclosed plastic sealed IPM, by the solder side 31 of lead frame 3 is designed to on-plane surface, solder side 31 is made to form continuous print Multi-contact with the cross section of the contact-making surface of solder, setting like this, in welding process, solder melts by the impact of high temperature, thus fill up in solder side 31 upper groove of lead frame 3, increase the contact area between chip and lead frame 3, improve the welding effect of chip, increase the firmness of welding, improve the reliability and stability of product.Meanwhile, the chip welded structure of disclosed plastic sealed IPM, structure and processing technology are simple, without the need to increasing product cost.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (5)
1. the chip welded structure of a plastic sealed IPM, comprise chip and lead frame, described lead frame is connected to the both sides of described chip, described lead frame has for carrying out with described chip the solder side that welds, described chip is welded on the solder side of described lead frame by solder, it is characterized in that: described solder side is on-plane surface, the cross section of the contact-making surface of described solder side and described solder is continuous print Multi-contact.
2. the chip welded structure of plastic sealed IPM according to claim 1, is characterized in that: the cross section of described solder side is wavy.
3. the chip welded structure of plastic sealed IPM according to claim 1, is characterized in that: the cross section of described solder side is continuous print dentation.
4. the chip welded structure of plastic sealed IPM according to claim 1, is characterized in that: the cross section of described solder side is the oval dome-shaped of continuous print.
5. the chip welded structure of the plastic sealed IPM according to 1 to 4 arbitrary claim, is characterized in that: described chip is igbt chip, diode chip for backlight unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410076944.7A CN104900621A (en) | 2014-03-04 | 2014-03-04 | Chip soldering structure of plastic-package IPM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410076944.7A CN104900621A (en) | 2014-03-04 | 2014-03-04 | Chip soldering structure of plastic-package IPM |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104900621A true CN104900621A (en) | 2015-09-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410076944.7A Pending CN104900621A (en) | 2014-03-04 | 2014-03-04 | Chip soldering structure of plastic-package IPM |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107808879A (en) * | 2017-11-20 | 2018-03-16 | 深圳顺络电子股份有限公司 | A kind of Switching Power Supply module and its method for packing |
| CN110190068A (en) * | 2019-05-21 | 2019-08-30 | 深圳市华星光电半导体显示技术有限公司 | The manufacturing method of display panel and display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0468528U (en) * | 1990-10-25 | 1992-06-17 | ||
| JPH09275170A (en) * | 1996-04-03 | 1997-10-21 | Fuji Electric Co Ltd | Semiconductor device |
| JP2009111154A (en) * | 2007-10-30 | 2009-05-21 | Mitsubishi Electric Corp | Power semiconductor module |
| CN103165588A (en) * | 2013-02-27 | 2013-06-19 | 西安永电电气有限责任公司 | Insulated gate bipolar transistor (IGBT) module |
-
2014
- 2014-03-04 CN CN201410076944.7A patent/CN104900621A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0468528U (en) * | 1990-10-25 | 1992-06-17 | ||
| JPH09275170A (en) * | 1996-04-03 | 1997-10-21 | Fuji Electric Co Ltd | Semiconductor device |
| JP2009111154A (en) * | 2007-10-30 | 2009-05-21 | Mitsubishi Electric Corp | Power semiconductor module |
| CN103165588A (en) * | 2013-02-27 | 2013-06-19 | 西安永电电气有限责任公司 | Insulated gate bipolar transistor (IGBT) module |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107808879A (en) * | 2017-11-20 | 2018-03-16 | 深圳顺络电子股份有限公司 | A kind of Switching Power Supply module and its method for packing |
| CN110190068A (en) * | 2019-05-21 | 2019-08-30 | 深圳市华星光电半导体显示技术有限公司 | The manufacturing method of display panel and display panel |
| WO2020232835A1 (en) * | 2019-05-21 | 2020-11-26 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor |
| US11302852B2 (en) | 2019-05-21 | 2022-04-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and method of manufacturing display panel |
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Application publication date: 20150909 |
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| RJ01 | Rejection of invention patent application after publication |