CN104883787A - Novel power amplification logic control system based on constant-current circuit - Google Patents
Novel power amplification logic control system based on constant-current circuit Download PDFInfo
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- CN104883787A CN104883787A CN201510293028.3A CN201510293028A CN104883787A CN 104883787 A CN104883787 A CN 104883787A CN 201510293028 A CN201510293028 A CN 201510293028A CN 104883787 A CN104883787 A CN 104883787A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
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Abstract
The invention discloses a novel power amplification logic control system based on a constant-current circuit. The novel power amplification logic control system is composed of a switching power amplification circuit and a logic amplification circuit connected with the switching power amplification circuit. The novel power amplification logic control system is characterized in that a constant-current circuit is connected in series between the switching power amplification circuit and the logic amplification circuit. The stability of the switching power amplification circuit is fully utilized, the stability of logic control signals can be ensured, and the system is applicable to different occasions. Meanwhile, through the function of the constant-current circuit, the system of the invention can maintain constant output current when a power grid fluctuates, and LED lamp damage due to current fluctuation is avoided.
Description
Technical field
The present invention relates to a kind of logic control system, specifically refer to a kind of new power amplifying type logic control system based on constant-current circuit.
Background technology
At present, because LED has, energy consumption is low, the feature such as long service life and safety and environmental protection, and it has become one of main product of people's life lighting.Because LED is different from traditional incandescent lamp, its needs are driven by special drive circuit, have therefore just occurred the protection system for preventing drive system from disturbing from inner or outside unfavorable factor miscellaneous on the market.
Logic control circuit is an important control section in LED protection system, and whether the speed of its speed of service and stable performance directly determine the scope of application and the performance quality of LED protection system.But these logic control circuits are when fluctuation appears in electrical network at present, its output current is also unstable, have impact on the normal work of LED to a great extent.
Summary of the invention
The object of the invention is to overcome current logic control system when fluctuation appears in electrical network, the defect that its output current is also unstable, a kind of new power amplifying type logic control system based on constant-current circuit is provided.
Object of the present invention is achieved through the following technical solutions: a kind of new power amplifying type logic control system based on constant-current circuit, it is by switch power amplifying circuit, and the logic amplifying circuit to be connected with this switch power amplifying circuit forms, in order to reach object of the present invention, the present invention is also serially connected with constant-current circuit between switch power amplifying circuit and logic amplifying circuit.
Further, described constant-current circuit is by operational amplifier P5, operational amplifier P6, field effect transistor MOS1, field effect transistor MOS2, field effect transistor MOS3, triode Q4, triode Q5, one end is connected with the drain electrode of field effect transistor MOS1, the resistance R18 of other end ground connection, P pole is connected with the source electrode of field effect transistor MOS1, N pole is then in turn through diode D4 that resistance R17 is connected with the drain electrode of field effect transistor MOS2 after resistance R19, positive pole is connected with the tie point of resistance R19 with resistance R17, the polar capacitor C8 of minus earth, one end is connected with the positive pole of polar capacitor C8, the resistance R20 that the other end is then connected with the drain electrode of field effect transistor MOS3, positive pole is connected with the P pole of diode D4, the polar capacitor C9 that negative pole is then connected with the base stage of triode Q5, and one end is connected with the collector electrode of triode Q5, the resistance R21 of other end ground connection forms, the grid of described field effect transistor MOS1 is connected with logic amplifying circuit, its source electrode is then connected with the positive pole of operational amplifier P5, the negative pole of operational amplifier P5 is connected with the drain electrode of field effect transistor MOS2, its positive pole is then connected with the positive pole of operational amplifier P6, its output is then connected with the grid of field effect transistor MOS2, the base stage of described triode Q4 is respectively with the source electrode of field effect transistor MOS2 and the emitter of triode Q5 is connected, its emitter is then connected with the source electrode of field effect transistor MOS3, its grounded collector, the described output of operational amplifier P6 is connected with the grid of field effect transistor MOS3, its negative pole is then connected with the drain electrode of field effect transistor MOS3 and switch power amplifying circuit respectively.
Described logic amplifying circuit is by power amplifier P4, NAND gate IC1, NAND gate IC2, NAND gate IC3, NAND gate IC4, one end is connected with the in-phase end of power amplifier P4, the other end is in turn through resistance R11 that diode D3 is connected with the output of NAND gate IC4 after resistance R16, one end is connected with the output of NAND gate IC3, the resistance R15 that the other end is connected with the tie point of resistance R16 with diode D3, N pole is connected with the in-phase end of power amplifier P4, P pole is in turn through diode D2 that resistance R10 is connected with the in-phase end of power amplifier P4 after electric capacity C6, the resistance R9 be in parallel with diode D2, one end is connected with the end of oppisite phase of power amplifier P4, the resistance R12 that the other end is connected with second input of NAND gate IC1, one end is connected with the first input end of NAND gate IC1, the resistance R13 that the other end is connected with second input of NAND gate IC4, one end is connected with the output of NAND gate IC1, the resistance R14 that the other end is connected with second input of NAND gate IC4, and positive pole is connected with the output of NAND gate IC2, the electric capacity C7 that negative pole is connected with second input of NAND gate IC4 forms, the output of described NAND gate IC1 is connected with the first input end of NAND gate IC2, and second input of NAND gate IC2 is also connected with the end of oppisite phase of power amplifier P4, the first input end of NAND gate IC3 is connected with the output of power amplifier P4, and its second input is then connected with the first input end of NAND gate IC4, the N pole of described diode D3 is extremely all connected with switch power amplifying circuit with its P, and the output of NAND gate IC2 is also connected with the grid of field effect transistor MOS1.
Described switch power amplifying circuit is primarily of power amplifier P1, power amplifier P2, power amplifier P3, be serially connected in the resistance R1 between the output of power amplifier P1 and end of oppisite phase and electric capacity C1, be serially connected in the resistance R2 between the output of power amplifier P2 and in-phase end and electric capacity C2, base stage is connected with the output of power amplifier P1, the triode Q1 that collector electrode is connected with the in-phase end of power amplifier P3 after resistance R3, base stage is connected with the emitter of triode Q1, the triode Q2 that collector electrode is connected with the end of oppisite phase of power amplifier P3 after resistance R4, base stage is connected with the output of power amplifier P2 after resistance R6, the triode Q3 that collector electrode is connected with the base stage of triode Q2 after resistance R5, positive pole is connected with the end of oppisite phase of power amplifier P3, and negative pole is connected with the emitter of triode Q2 and the electric capacity C4 of ground connection, the electric capacity C3 be in parallel with resistance R6, one end is connected with the base stage of triode Q3, the resistance R7 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q3, the resistance R8 of the external-4V voltage of the other end, the electric capacity C5 be in parallel with resistance R8, and N pole is connected with the collector electrode of triode Q1, the diode D1 of the extremely external-4V voltage of P forms, the in-phase end of described power amplifier P1 is connected with the tie point of diode D3 with resistance R11, and its end of oppisite phase is then connected with the in-phase end of power amplifier P2, and the end of oppisite phase of power amplifier P2 is then connected with the tie point of resistance R16 with resistance R15, the negative pole of described operational amplifier P6 is then connected with the emitter of triode Q3 after electric capacity C5.
Described electric capacity C1, electric capacity C2, electric capacity C6 and electric capacity C7 are patch capacitor; Described electric capacity C3, electric capacity C4 and electric capacity C5 are electrochemical capacitor.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) overall structure of the present invention is simple, and it makes and very easy to use.
(2) the present invention adopts logic electronic components to realize its logic control function completely, and therefore its energy consumption is very low, fast operation.
(3) the present invention make use of the stability characteristic (quality) of switch power amplifying circuit fully, can guarantee the stability of logic control signal, goes for different field settings.
(4) the present invention is by the effect of constant-current circuit, and when fluctuation appears in electrical network, the present invention still can keep constant output current, avoids LED to damage because of current fluctuation.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention is by switch power amplifying circuit, and the logic amplifying circuit to be connected with this switch power amplifying circuit forms, in order to reach object of the present invention, the present invention is also serially connected with constant-current circuit between switch power amplifying circuit and logic amplifying circuit.
Wherein, constant-current circuit by operational amplifier P5, operational amplifier P6, field effect transistor MOS1, field effect transistor MOS2, field effect transistor MOS3, triode Q4, triode Q5, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, diode D4, polar capacitor C8 and polar capacitor C9 form.
During connection, one end of resistance R18 is connected with the drain electrode of field effect transistor MOS1, its other end ground connection, the P pole of diode D4 is connected with the source electrode of field effect transistor MOS1, its N pole is then connected with the drain electrode of field effect transistor MOS2 after resistance R19 through resistance R17 in turn, the positive pole of polar capacitor C8 is connected with the tie point of resistance R19 with resistance R17, its minus earth, one end of resistance R20 is connected with the positive pole of polar capacitor C8, its other end is then connected with the drain electrode of field effect transistor MOS3, the positive pole of polar capacitor C9 is connected with the P pole of diode D4, its negative pole is then connected with the base stage of triode Q5, one end of resistance R21 is connected with the collector electrode of triode Q5, its other end ground connection.
Meanwhile, the grid of the effect pipe MOS1 of described field is connected with logic amplifying circuit, its source electrode is then connected with the positive pole of operational amplifier P5.The negative pole of operational amplifier P5 is connected with the drain electrode of field effect transistor MOS2, its positive pole is then connected with the positive pole of operational amplifier P6, its output is then connected with the grid of field effect transistor MOS2.The base stage of described triode Q4 is respectively with the source electrode of field effect transistor MOS2 and the emitter of triode Q5 is connected, its emitter is then connected with the source electrode of field effect transistor MOS3, its grounded collector.The described output of operational amplifier P6 is connected with the grid of field effect transistor MOS3, its negative pole is then connected with the drain electrode of field effect transistor MOS3 and switch power amplifying circuit respectively.
Wherein, operational amplifier P5, operational amplifier P6, field effect transistor MOS2 and field effect transistor MOS3 form a stable galvanostat.And the resistance of resistance R19 and resistance R20 is set to equal, the present embodiment is set to 1K Ω because the resistance of resistance R19 and resistance R20 is equal, so its to be input to the electric current of field effect transistor MOS2 and field effect transistor MOS3 equal.Meanwhile, due to the pressure stabilization function of field effect transistor MOS1 and polar capacitor C9, the voltage being input to triode Q5 is made to become stable.In addition, because the emitter of triode Q5 and triode Q4 exports Low ESR, therefore galvanostat is not by the impact of power network fluctuation, can export constant electric current, with the work ensureing that LED can be stable.
Wherein, described logic amplifying circuit is by power amplifier P4, NAND gate IC1, NAND gate IC2, NAND gate IC3, NAND gate IC4, and diode D2, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, electric capacity C6 and electric capacity C7 form.
During connection, one end of resistance R11 is connected with the in-phase end of power amplifier P4, and its other end is connected with the output of NAND gate IC4 after resistance R16 through diode D3 in turn.One end of resistance R15 is connected with the output of NAND gate IC3, and its other end is connected with the tie point of resistance R16 with diode D3.The N pole of described diode D2 is connected with the in-phase end of power amplifier P4, and its P pole is connected with the in-phase end of power amplifier P4 after electric capacity C6 through resistance R10 in turn; Resistance R9 and diode D2 is in parallel.
One end of described resistance R12 is connected with the end of oppisite phase of power amplifier P4, and its other end is connected with second input of NAND gate IC1; One end of resistance R13 is connected with the first input end of NAND gate IC1, and its other end is connected with second input of NAND gate IC4.One end of resistance R14 is connected with the output of NAND gate IC1, and its other end is connected with second input of NAND gate IC4; The described positive pole of electric capacity C7 is connected with the output of NAND gate IC2, and its negative pole is connected with second input of NAND gate IC4.
Meanwhile, the output of NAND gate IC1 is connected with the first input end of NAND gate IC2, and second input of NAND gate IC2 is also connected with the end of oppisite phase of power amplifier P4; The first input end of NAND gate IC3 is connected with the output of power amplifier P4, and its second input is then connected with the first input end of NAND gate IC4.
In addition, the N pole of this diode D3 is extremely all connected with switch power amplifying circuit with its P, and the output of NAND gate IC2 is also connected with the grid of field effect transistor MOS1.
Described switch power amplifying circuit is primarily of power amplifier P1, power amplifier P2, power amplifier P3, be serially connected in the resistance R1 between the output of power amplifier P1 and end of oppisite phase and electric capacity C1, be serially connected in the resistance R2 between the output of power amplifier P2 and in-phase end and electric capacity C2, base stage is connected with the output of power amplifier P1, the triode Q1 that collector electrode is connected with the in-phase end of power amplifier P3 after resistance R3, base stage is connected with the emitter of triode Q1, the triode Q2 that collector electrode is connected with the end of oppisite phase of power amplifier P3 after resistance R4, base stage is connected with the output of power amplifier P2 after resistance R6, the triode Q3 that collector electrode is connected with the base stage of triode Q2 after resistance R5, positive pole is connected with the end of oppisite phase of power amplifier P3, and negative pole is connected with the emitter of triode Q2 and the electric capacity C4 of ground connection, the electric capacity C3 be in parallel with resistance R6, one end is connected with the base stage of triode Q3, the resistance R7 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q3, the resistance R8 of the external-4V voltage of the other end, the electric capacity C5 be in parallel with resistance R8, and N pole is connected with the collector electrode of triode Q1, the diode D1 of the extremely external-4V voltage of P forms.
During connection, the in-phase end of described power amplifier P1 is connected with the tie point of diode D3 with resistance R11, its end of oppisite phase is then connected with the in-phase end of power amplifier P2, and the end of oppisite phase of power amplifier P2 is then connected with the tie point of resistance R16 with resistance R15.Meanwhile, the negative pole of operational amplifier P6 is then connected with the emitter of triode Q3 after electric capacity C5.
For guaranteeing practical function, described electric capacity C1, electric capacity C2, electric capacity C6 and electric capacity C7 are patch capacitor; Described electric capacity C3, electric capacity C4 and electric capacity C5 are electrochemical capacitor.
As mentioned above, just the present invention can well be realized.
Claims (4)
1. based on a new power amplifying type logic control system for constant-current circuit, it is by switch power amplifying circuit, and the logic amplifying circuit be connected with this switch power amplifying circuit forms, it is characterized in that: between switch power amplifying circuit and logic amplifying circuit, be also serially connected with constant-current circuit, described constant-current circuit is by operational amplifier P5, operational amplifier P6, field effect transistor MOS1, field effect transistor MOS2, field effect transistor MOS3, triode Q4, triode Q5, one end is connected with the drain electrode of field effect transistor MOS1, the resistance R18 of other end ground connection, P pole is connected with the source electrode of field effect transistor MOS1, N pole is then in turn through diode D4 that resistance R17 is connected with the drain electrode of field effect transistor MOS2 after resistance R19, positive pole is connected with the tie point of resistance R19 with resistance R17, the polar capacitor C8 of minus earth, one end is connected with the positive pole of polar capacitor C8, the resistance R20 that the other end is then connected with the drain electrode of field effect transistor MOS3, positive pole is connected with the P pole of diode D4, the polar capacitor C9 that negative pole is then connected with the base stage of triode Q5, and one end is connected with the collector electrode of triode Q5, the resistance R21 of other end ground connection forms, the grid of described field effect transistor MOS1 is connected with logic amplifying circuit, its source electrode is then connected with the positive pole of operational amplifier P5, the negative pole of operational amplifier P5 is connected with the drain electrode of field effect transistor MOS2, its positive pole is then connected with the positive pole of operational amplifier P6, its output is then connected with the grid of field effect transistor MOS2, the base stage of described triode Q4 is respectively with the source electrode of field effect transistor MOS2 and the emitter of triode Q5 is connected, its emitter is then connected with the source electrode of field effect transistor MOS3, its grounded collector, the described output of operational amplifier P6 is connected with the grid of field effect transistor MOS3, its negative pole is then connected with the drain electrode of field effect transistor MOS3 and switch power amplifying circuit respectively.
2. a kind of new power amplifying type logic control system based on constant-current circuit according to claim 1, it is characterized in that, described logic amplifying circuit is by power amplifier P4, NAND gate IC1, NAND gate IC2, NAND gate IC3, NAND gate IC4, one end is connected with the in-phase end of power amplifier P4, the other end is in turn through resistance R11 that diode D3 is connected with the output of NAND gate IC4 after resistance R16, one end is connected with the output of NAND gate IC3, the resistance R15 that the other end is connected with the tie point of resistance R16 with diode D3, N pole is connected with the in-phase end of power amplifier P4, P pole is in turn through diode D2 that resistance R10 is connected with the in-phase end of power amplifier P4 after electric capacity C6, the resistance R9 be in parallel with diode D2, one end is connected with the end of oppisite phase of power amplifier P4, the resistance R12 that the other end is connected with second input of NAND gate IC1, one end is connected with the first input end of NAND gate IC1, the resistance R13 that the other end is connected with second input of NAND gate IC4, one end is connected with the output of NAND gate IC1, the resistance R14 that the other end is connected with second input of NAND gate IC4, and positive pole is connected with the output of NAND gate IC2, the electric capacity C7 that negative pole is connected with second input of NAND gate IC4 forms, the output of described NAND gate IC1 is connected with the first input end of NAND gate IC2, and second input of NAND gate IC2 is also connected with the end of oppisite phase of power amplifier P4, the first input end of NAND gate IC3 is connected with the output of power amplifier P4, and its second input is then connected with the first input end of NAND gate IC4, the N pole of described diode D3 is extremely all connected with switch power amplifying circuit with its P, and the output of NAND gate IC2 is also connected with the grid of field effect transistor MOS1.
3. a kind of new power amplifying type logic control system based on constant-current circuit according to claim 2, it is characterized in that, described switch power amplifying circuit is primarily of power amplifier P1, power amplifier P2, power amplifier P3, be serially connected in the resistance R1 between the output of power amplifier P1 and end of oppisite phase and electric capacity C1, be serially connected in the resistance R2 between the output of power amplifier P2 and in-phase end and electric capacity C2, base stage is connected with the output of power amplifier P1, the triode Q1 that collector electrode is connected with the in-phase end of power amplifier P3 after resistance R3, base stage is connected with the emitter of triode Q1, the triode Q2 that collector electrode is connected with the end of oppisite phase of power amplifier P3 after resistance R4, base stage is connected with the output of power amplifier P2 after resistance R6, the triode Q3 that collector electrode is connected with the base stage of triode Q2 after resistance R5, positive pole is connected with the end of oppisite phase of power amplifier P3, and negative pole is connected with the emitter of triode Q2 and the electric capacity C4 of ground connection, the electric capacity C3 be in parallel with resistance R6, one end is connected with the base stage of triode Q3, the resistance R7 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q3, the resistance R8 of the external-4V voltage of the other end, the electric capacity C5 be in parallel with resistance R8, and N pole is connected with the collector electrode of triode Q1, the diode D1 of the extremely external-4V voltage of P forms, the in-phase end of described power amplifier P1 is connected with the tie point of diode D3 with resistance R11, and its end of oppisite phase is then connected with the in-phase end of power amplifier P2, and the end of oppisite phase of power amplifier P2 is then connected with the tie point of resistance R16 with resistance R15, the negative pole of described operational amplifier P6 is then connected with the emitter of triode Q3 after electric capacity C5.
4. a kind of new power amplifying type logic control system based on constant-current circuit according to claim 3, it is characterized in that, described electric capacity C1, electric capacity C2, electric capacity C6 and electric capacity C7 are patch capacitor; Described electric capacity C3, electric capacity C4 and electric capacity C5 are electrochemical capacitor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510293028.3A CN104883787A (en) | 2014-11-23 | 2015-06-01 | Novel power amplification logic control system based on constant-current circuit |
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| CN201410676698.9A CN104411045A (en) | 2014-11-23 | 2014-11-23 | Novel power amplification type logic control system |
| CN2014106766989 | 2014-11-23 | ||
| CN201510293028.3A CN104883787A (en) | 2014-11-23 | 2015-06-01 | Novel power amplification logic control system based on constant-current circuit |
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| CN201510293028.3A Pending CN104883787A (en) | 2014-11-23 | 2015-06-01 | Novel power amplification logic control system based on constant-current circuit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201365228Y (en) * | 2009-02-25 | 2009-12-16 | 陈红敏 | Pure post power amplifier with high fidelity, high linearity and broad frequency band |
| EP2180763A1 (en) * | 2008-10-23 | 2010-04-28 | Hui-Lung Kao | Energy-saving drive device for controlling an led heat dissipation temperature |
| KR20120110700A (en) * | 2011-03-30 | 2012-10-10 | 에프씨산업 주식회사 | Pvled streetlamp system |
| CN202798667U (en) * | 2012-08-25 | 2013-03-13 | 成都方拓科技有限公司 | Exclusive-OR (XOR) gate circuit structure based on resonance protection |
-
2014
- 2014-11-23 CN CN201410676698.9A patent/CN104411045A/en active Pending
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2015
- 2015-06-01 CN CN201510293028.3A patent/CN104883787A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2180763A1 (en) * | 2008-10-23 | 2010-04-28 | Hui-Lung Kao | Energy-saving drive device for controlling an led heat dissipation temperature |
| CN201365228Y (en) * | 2009-02-25 | 2009-12-16 | 陈红敏 | Pure post power amplifier with high fidelity, high linearity and broad frequency band |
| KR20120110700A (en) * | 2011-03-30 | 2012-10-10 | 에프씨산업 주식회사 | Pvled streetlamp system |
| CN202798667U (en) * | 2012-08-25 | 2013-03-13 | 成都方拓科技有限公司 | Exclusive-OR (XOR) gate circuit structure based on resonance protection |
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