CN202798667U - Exclusive-OR (XOR) gate circuit structure based on resonance protection - Google Patents
Exclusive-OR (XOR) gate circuit structure based on resonance protection Download PDFInfo
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- CN202798667U CN202798667U CN 201220424254 CN201220424254U CN202798667U CN 202798667 U CN202798667 U CN 202798667U CN 201220424254 CN201220424254 CN 201220424254 CN 201220424254 U CN201220424254 U CN 201220424254U CN 202798667 U CN202798667 U CN 202798667U
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Abstract
The utility model discloses an XOR gate circuit structure based on resonance protection. The circuit structure is characterized by mainly comprising an XOR gate integrated chip U1, an XOR gate integrated chip U2, a resistor R and a resonance protection circuit, wherein the XOR gate integrated chip U1 and the XOR gate integrated chip U2 are mutually connected; the resistor R is connected with the input ends of the XOR gate integrated chip U1 and the XOR gate integrated chip U2; and the resonance protection circuit is connected with the output ends of the XOR gate integrated chip U1 and the XOR gate integrated chip U2. The XOR gate circuit structure can not only completely overcome the defect that the existing XOR gate circuits are not provided with the resonance protection function, but also the performances are stable, the power consumption is low, and popularization and utilization are facilitated.
Description
Technical field
The utility model relates to a kind of circuit structure, specifically refers to a kind of NOR gate circuit structure based on resonance protection.
Background technology
At present, people can use various electronic equipments in life, and all have NOR gate circuit in the most electronic equipment, with by identify height, end level comes electronic equipment is controlled.But present NOR gate circuit does not on the market all have the resonance protection function, therefore when a large amount of electrophoresis appears in the voltage of input, not only can have influence on greatly the normal use of NOR gate circuit, but also can reduce the useful life of NOR gate circuit.
The utility model content
The purpose of this utility model is to overcome the defective that present NOR gate circuit does not have the resonance protection function, and a kind of NOR gate circuit structure based on resonance protection is provided.
The utility model is achieved through the following technical solutions: a kind of NOR gate circuit structure based on resonance protection; mainly by two interconnective XOR gate integrated chip U1 and XOR gate integrated chip U2; the resistance R that all is connected with the input of XOR gate integrated chip U1 and XOR gate integrated chip U2, and the resonant protection circuit that is connected with the output of XOR gate integrated chip U1 and XOR gate integrated chip U2 forms.
Described resonant protection circuit is by field-effect transistor Q; the capacitor C 1 that one end is connected with the grid of field-effect transistor Q, the other end is connected with the drain electrode of field-effect transistor Q after capacitor C 2, capacitor C 4 successively; be serially connected in the capacitor C 3 between the drain electrode of the tie point of capacitor C 1 and capacitor C 2 and field-effect transistor Q, and form with inductance L that capacitor C 4 is in parallel.The output of described XOR gate integrated chip U1 is connected with the tie point of capacitor C 1 with capacitor C 2, and the output of XOR gate integrated chip U2 then is connected with the tie point of capacitor C 2 with capacitor C 4.
In order to realize preferably the utility model, the resistance of described resistance R is 4.7 K Ω, and described capacitor C 1, capacitor C 2, capacitor C 3 and capacitor C 4 are the high pressure patch capacitor.
The utility model compared with prior art has the following advantages and beneficial effect:
(1) the utility model can thoroughly solve the defective that traditional NOR gate circuit does not have the resonance protection function.
(2) the utility model overall performance is highly stable, and power consumption is lower, is beneficial to promote and use.
(3) not only cost of manufacture is comparatively cheap for the utility model, and its volume is very little.
Description of drawings
Fig. 1 is electrical block diagram of the present utility model.
Embodiment
Below in conjunction with embodiment the utility model is described in further detail, but execution mode of the present utility model is not limited to this.
Embodiment
As shown in Figure 1, circuit structure of the present utility model comprises XOR gate integrated chip U1, XOR gate integrated chip U2, resistance R and resonant protection circuit.Wherein, resistance R is connected with any input of XOR gate integrated chip U2 with XOR gate integrated chip U1 respectively, and resonant protection circuit then is connected with the output of XOR gate integrated chip U2 with XOR gate integrated chip U1 respectively.
Described resonant protection circuit is by field-effect transistor Q; the capacitor C 1 that one end is connected with the grid of field-effect transistor Q, the other end is connected with the drain electrode of field-effect transistor Q after capacitor C 2, capacitor C 4 successively; be serially connected in the capacitor C 3 between the drain electrode of the tie point of capacitor C 1 and capacitor C 2 and field-effect transistor Q, and form with inductance L that capacitor C 4 is in parallel.
Wherein, the output of XOR gate integrated chip U1 is connected with the tie point of capacitor C 1 with capacitor C 2, and the output of XOR gate integrated chip U2 then is connected with the tie point of capacitor C 2 with capacitor C 4.Consider actual ruuning situation, the resistance of the resistance R in the present embodiment is preferably 4.7 K Ω, and capacitor C 1, capacitor C 2, capacitor C 3 and capacitor C 4 all adopt the high pressure patch capacitor, to guarantee its result of use.
As mentioned above, just can realize preferably the utility model.
Claims (4)
1. NOR gate circuit structure based on resonance protection; it is characterized in that; mainly by two interconnective XOR gate integrated chip U1 and XOR gate integrated chip U2; the resistance R that all is connected with the input of XOR gate integrated chip U1 and XOR gate integrated chip U2, and the resonant protection circuit that is connected with the output of XOR gate integrated chip U1 and XOR gate integrated chip U2 forms.
2. a kind of NOR gate circuit structure based on resonance protection according to claim 1, it is characterized in that: described resonant protection circuit is by field-effect transistor Q, the capacitor C 1 that one end is connected with the grid of field-effect transistor Q, the other end is connected with the drain electrode of field-effect transistor Q after capacitor C 2, capacitor C 4 successively, be serially connected in the capacitor C 3 between the drain electrode of the tie point of capacitor C 1 and capacitor C 2 and field-effect transistor Q, and form with inductance L that capacitor C 4 is in parallel; The output of described XOR gate integrated chip U1 is connected with the tie point of capacitor C 1 with capacitor C 2, and the output of XOR gate integrated chip U2 then is connected with the tie point of capacitor C 2 with capacitor C 4.
3. a kind of NOR gate circuit structure based on resonance protection according to claim 1 and 2, it is characterized in that: the resistance of described resistance R is 4.7 K Ω.
4. a kind of NOR gate circuit structure based on resonance protection according to claim 3, it is characterized in that: described capacitor C 1, capacitor C 2, capacitor C 3 and capacitor C 4 are the high pressure patch capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220424254 CN202798667U (en) | 2012-08-25 | 2012-08-25 | Exclusive-OR (XOR) gate circuit structure based on resonance protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220424254 CN202798667U (en) | 2012-08-25 | 2012-08-25 | Exclusive-OR (XOR) gate circuit structure based on resonance protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202798667U true CN202798667U (en) | 2013-03-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220424254 Expired - Fee Related CN202798667U (en) | 2012-08-25 | 2012-08-25 | Exclusive-OR (XOR) gate circuit structure based on resonance protection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202798667U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104883182A (en) * | 2015-05-26 | 2015-09-02 | 孙景春 | Boost exclusive OR circuit structure |
| CN104883787A (en) * | 2014-11-23 | 2015-09-02 | 成都冠深科技有限公司 | Novel power amplification logic control system based on constant-current circuit |
| CN110676820A (en) * | 2019-09-19 | 2020-01-10 | 北京四方继保自动化股份有限公司 | High-frequency resonance backup protection method for flexible direct-current power transmission system |
-
2012
- 2012-08-25 CN CN 201220424254 patent/CN202798667U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104883787A (en) * | 2014-11-23 | 2015-09-02 | 成都冠深科技有限公司 | Novel power amplification logic control system based on constant-current circuit |
| CN104883182A (en) * | 2015-05-26 | 2015-09-02 | 孙景春 | Boost exclusive OR circuit structure |
| CN110676820A (en) * | 2019-09-19 | 2020-01-10 | 北京四方继保自动化股份有限公司 | High-frequency resonance backup protection method for flexible direct-current power transmission system |
| CN110676820B (en) * | 2019-09-19 | 2021-07-27 | 北京四方继保自动化股份有限公司 | High-frequency resonance backup protection method for flexible direct-current power transmission system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130313 Termination date: 20130825 |