CN202798666U - Boosted exclusive OR circuit structure - Google Patents

Boosted exclusive OR circuit structure Download PDF

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Publication number
CN202798666U
CN202798666U CN 201220424264 CN201220424264U CN202798666U CN 202798666 U CN202798666 U CN 202798666U CN 201220424264 CN201220424264 CN 201220424264 CN 201220424264 U CN201220424264 U CN 201220424264U CN 202798666 U CN202798666 U CN 202798666U
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CN
China
Prior art keywords
integrated chip
gate integrated
xor gate
exclusive
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201220424264
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Chinese (zh)
Inventor
王艳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHENGDU FANGTA TECHNOLOGY CO LTD
Original Assignee
CHENGDU FANGTA TECHNOLOGY CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Priority to CN 201220424264 priority Critical patent/CN202798666U/en
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Publication of CN202798666U publication Critical patent/CN202798666U/en
Anticipated expiration legal-status Critical
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Abstract

The utility model discloses a boosted exclusive OR circuit structure. The structure is characterized by comprising an exclusive-OR gate integrated chip U1, an exclusive-OR gate integrated chip U2, a resistor R1, a backing protective circuit and a boosted circuit, wherein the exclusive-OR gate integrated chip U1 and the exclusive-OR gate integrated chip U2 are connected mutually, the resistor R1 is connected to input ends of the exclusive-OR gate integrated chip U1 and the exclusive-OR gate integrated chip U2, the backing protective circuit is connected to the exclusive-OR gate integrated chip U1 in parallel, and the boosted circuit is connected to output ends of the exclusive-OR gate integrated chip U1 and the exclusive-OR gate integrated chip U2. The structure is simple, low in production cost and maintenance cost and capable of solving the defect that a traditional exclusive OR circuit does not have a backing protection function.

Description

A kind of XOR circuit structure of boosting
Technical field
The utility model relates to a kind of circuit structure, specifically refers to a kind of XOR circuit structure of boosting.
Background technology
At present, people can use various electronic equipments in life, and all have NOR gate circuit in the most electronic equipment, with by identify height, end level comes electronic equipment is controlled.But present NOR gate circuit does not on the market all have reversal connection protection function and boost function, and therefore when the unexpected appearance of external power supply level conversion of the high end, its peak value can produce larger impact to NOR gate circuit, and then affects its recognition effect.
The utility model content
The purpose of this utility model is to overcome the defective that present NOR gate circuit does not have reversal connection protection function and boost function, provides a kind of simple in structure, has a kind of XOR circuit structure of boosting of good reversal connection protection function and boost function.
The utility model is achieved through the following technical solutions: a kind of XOR circuit structure of boosting; mainly by two interconnective XOR gate integrated chip U1 and XOR gate integrated chip U2; the resistance R 1 that all is connected with the input of XOR gate integrated chip U1 and XOR gate integrated chip U2; the reverse-connection protection circuit that is in parallel with XOR gate integrated chip U1, and the booster circuit that is connected with the output of XOR gate integrated chip U1 and XOR gate integrated chip U2 forms.
Further; described reverse-connection protection circuit is by an end and the input of XOR gate integrated chip U1 is connected, the other end is connected with the output of XOR gate integrated chip U1 after diode D3, relay K fuse F; and the diode D4 that is in parallel with relay K forms, and the normally opened contact of described relay K then is connected in series mutually with resistance R 1.
Described booster circuit is by resistance R 2 and the storage capacitor C of mutual serial connection, and one end be connected to bidirectional trigger diode DB between resistance R 2 and the storage capacitor C and diode D2 forms, the output of described XOR gate integrated chip U1 and XOR gate integrated chip U2 then is connected with the two ends of resistance R 2 respectively.
In order to realize preferably the utility model, the impedance of described resistance R 1 equates with the impedance of resistance R 2.
The utility model compared with prior art has the following advantages and beneficial effect:
(1) not only overall structure is very simple for the utility model, and its cost of manufacture and maintenance cost are very cheap, and the utility model can also thoroughly solve the ubiquitous defective that does not have reversal connection protection function of traditional NOR gate circuit.
(2) the utlity model has boost function, can guarantee when voltage is not high, also can normally use, thereby enlarge the scope of application.
Description of drawings
Fig. 1 is electrical block diagram of the present utility model.
Embodiment
Below in conjunction with embodiment the utility model is described in further detail, but execution mode of the present utility model is not limited to this.
Embodiment
As shown in Figure 1; the XOR circuit structure of boosting of the present utility model is mainly by two interconnective XOR gate integrated chip U1 and XOR gate integrated chip U2; the resistance R 1 that all is connected with the input of XOR gate integrated chip U1 and XOR gate integrated chip U2; the reverse-connection protection circuit that is in parallel with XOR gate integrated chip U1, and the booster circuit that is connected with the output of XOR gate integrated chip U1 and XOR gate integrated chip U2 forms.
As shown in the figure, this reverse-connection protection circuit is by an end and the input of XOR gate integrated chip U1 is connected, the other end is connected with the output of XOR gate integrated chip U1 after diode D3, relay K fuse F, and the diode D4 that is in parallel with relay K forms, and the normally opened contact of described relay K then is connected in series mutually with resistance R 1; This booster circuit is then by resistance R 2 and the storage capacitor C of mutual serial connection, and bidirectional trigger diode DB and diode D2 that an end is connected between resistance R 2 and the storage capacitor C form.
During connection, the output of XOR gate integrated chip U1 and XOR gate integrated chip U2 is connected with the two ends of resistance R 2 respectively, and namely resistance R 2 is between the output of XOR gate integrated chip U1 and XOR gate integrated chip U2.In order to ensure result of use, the impedance of this resistance R 1 equates that with the impedance of resistance R 2 its optimum impedance is 5.6K Ω.
As mentioned above, just can realize preferably the utility model.

Claims (4)

1. XOR circuit structure of boosting; it is characterized in that; mainly by two interconnective XOR gate integrated chip U1 and XOR gate integrated chip U2; the resistance R 1 that all is connected with the input of XOR gate integrated chip U1 and XOR gate integrated chip U2; the reverse-connection protection circuit that is in parallel with XOR gate integrated chip U1, and the booster circuit that is connected with the output of XOR gate integrated chip U1 and XOR gate integrated chip U2 forms.
2. a kind of XOR circuit structure of boosting according to claim 1; it is characterized in that; described reverse-connection protection circuit is by an end and the input of XOR gate integrated chip U1 is connected, the other end is connected with the output of XOR gate integrated chip U1 after diode D3, relay K fuse F; and the diode D4 that is in parallel with relay K forms, and the normally opened contact of described relay K then is connected in series mutually with resistance R 1.
3. a kind of XOR circuit structure of boosting according to claim 2, it is characterized in that, described booster circuit is by resistance R 2 and the storage capacitor C of mutual serial connection, and one end be connected to bidirectional trigger diode DB between resistance R 2 and the storage capacitor C and diode D2 forms, the output of described XOR gate integrated chip U1 and XOR gate integrated chip U2 then is connected with the two ends of resistance R 2 respectively.
4. a kind of XOR circuit structure of boosting according to claim 3 is characterized in that the impedance of described resistance R 1 equates with the impedance of resistance R 2.
CN 201220424264 2012-08-25 2012-08-25 Boosted exclusive OR circuit structure Expired - Fee Related CN202798666U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220424264 CN202798666U (en) 2012-08-25 2012-08-25 Boosted exclusive OR circuit structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220424264 CN202798666U (en) 2012-08-25 2012-08-25 Boosted exclusive OR circuit structure

Publications (1)

Publication Number Publication Date
CN202798666U true CN202798666U (en) 2013-03-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220424264 Expired - Fee Related CN202798666U (en) 2012-08-25 2012-08-25 Boosted exclusive OR circuit structure

Country Status (1)

Country Link
CN (1) CN202798666U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104883182A (en) * 2015-05-26 2015-09-02 孙景春 Boost exclusive OR circuit structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104883182A (en) * 2015-05-26 2015-09-02 孙景春 Boost exclusive OR circuit structure

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130313

Termination date: 20130825