CN104883145A - Power amplified logic system based on constant current circuit - Google Patents
Power amplified logic system based on constant current circuit Download PDFInfo
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- CN104883145A CN104883145A CN201510290573.7A CN201510290573A CN104883145A CN 104883145 A CN104883145 A CN 104883145A CN 201510290573 A CN201510290573 A CN 201510290573A CN 104883145 A CN104883145 A CN 104883145A
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- resistance
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- nand gate
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- field effect
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2178—Class D power amplifiers; Switching amplifiers using more than one switch or switching amplifier in parallel or in series
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/114—Indexing scheme relating to amplifiers the amplifier comprising means for electro-magnetic interference [EMI] protection
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
Abstract
The invention discloses a power amplified logic system based on a constant current circuit. The power amplified logic system is composed of a power logic amplification circuit, a switching power amplification circuit and a logic switching circuit, wherein the switching power amplification circuit is connected with the power logic amplification circuit, and the logic switching circuit is serially connected between the power logic amplification circuit and the switching power amplification circuit. The power amplified logic system based on the constant current circuit is characterized in that the output end of the switching power amplification circuit is connected with the constant current circuit; the power amplified logic system is simple in integral structure and is convenient to produce, popularize and use. Meanwhile, the power amplified logic system can effectively reduce the attenuation amplitude of amplified signals, so that the performance of the amplified signals can be ensured. In addition, the power amplified logic system can keep constant current output after conducting power drive amplification, so that the application range of the power amplified logic system is greatly enlarged.
Description
Technical field
The present invention relates to a kind of amplifying circuit, specifically refer to a kind of power amplification formula logic system based on constant-current circuit.
Background technology
At present, widely, relevant voltage signal, current signal and other pulse signals are mainly carried out power amplification by according to demand in the utilization of power amplification circuit.But traditional power amplification circuit is after carrying out power drive amplification, and its electric current then cannot keep steady state value, therefore to a great extent in constrain its scope of application.
Summary of the invention
The object of the invention is to overcome traditional power amplification circuit after carrying out power drive amplification, its electric current then cannot keep constant defect, provides a kind of power amplification formula logic system based on constant-current circuit.
Object of the present invention is achieved through the following technical solutions: a kind of power amplification formula logic system based on constant-current circuit, it is by logical power amplifying circuit, the switch power amplifying circuit be connected with this logical power amplifying circuit, and the logic switching circuit be serially connected between logical power amplifying circuit and switch power amplifying circuit forms, in order to reach object of the present invention, the present invention is also connected with constant-current circuit at the output of switch power amplifying circuit.
Described constant-current circuit is by operational amplifier P3, operational amplifier P4, field effect transistor MOS1, field effect transistor MOS2, field effect transistor MOS3, triode Q4, triode Q5, one end is connected with the drain electrode of field effect transistor MOS1, the resistance R15 of other end ground connection, P pole is connected with the source electrode of field effect transistor MOS1, N pole is then in turn through diode D3 that resistance R14 is connected with the drain electrode of field effect transistor MOS2 after resistance R16, positive pole is connected with the tie point of resistance R16 with resistance R14, the polar capacitor C6 of minus earth, one end is connected with the positive pole of polar capacitor C6, the resistance R17 that the other end is then connected with the drain electrode of field effect transistor MOS3, positive pole is connected with the P pole of diode D3, the polar capacitor C7 that negative pole is then connected with the base stage of triode Q5, and one end is connected with the collector electrode of triode Q5, the resistance R18 of other end ground connection forms, the grid of described field effect transistor MOS1 is connected with switch power amplifying circuit, its source electrode is then connected with the positive pole of operational amplifier P3, the negative pole of operational amplifier P3 is connected with the drain electrode of field effect transistor MOS2, its positive pole is then connected with the positive pole of operational amplifier P4, its output is then connected with the grid of field effect transistor MOS2, the base stage of described triode Q4 is respectively with the source electrode of field effect transistor MOS2 and the emitter of triode Q5 is connected, its emitter is then connected with the source electrode of field effect transistor MOS3, its grounded collector, the described output of operational amplifier P4 is connected with the grid of field effect transistor MOS3, its negative pole is then connected with the drain electrode of field effect transistor MOS3, the positive pole of described polar capacitor C6 is also connected with switch power amplifying circuit.
Described logical power amplifying circuit is by power amplifier P1, NAND gate IC1, NAND gate IC2, N pole is connected with the output of power amplifier P1, the diode D2 that P pole is connected with the negative input of NAND gate IC1 after resistance R12, one end is connected with the electrode input end of NAND gate IC1, the resistance R13 that the other end is connected with the output of NAND gate IC2 after electric capacity C2, one end is connected with the output of NAND gate IC1, the resistance R10 that the other end is connected with the tie point of electric capacity C2 with resistance R13, and one end is connected with the negative input of power amplifier P1, the resistance R11 of other end ground connection forms, the output of described power amplifier P1 is connected with switch power amplifying circuit, the output of NAND gate IC2 is then connected with logic switching circuit, simultaneously, the output of NAND gate IC1 is also connected with the electrode input end of NAND gate IC2, and the negative input of NAND gate IC2 forms total input together with the electrode input end of power amplifier P1.
Described switch power amplifying circuit is by power amplifier P2, power amplifier P3, be serially connected in the resistance R1 between the output of power amplifier P2 and negative input and electric capacity C1, base stage is connected with the output of power amplifier P2, the triode Q1 that collector electrode is connected with the electrode input end of power amplifier P3 after resistance R3, base stage is connected with the emitter of triode Q1, the triode Q2 that collector electrode is connected with the negative input of power amplifier P3 after resistance R4, positive pole is connected with the negative input of power amplifier P3, and negative pole is connected with the emitter of triode Q2 and the electric capacity C3 of ground connection, and N pole is connected with the collector electrode of triode Q1, the diode D1 of the extremely external-4V voltage of P forms, the electrode input end of described power amplifier P2 is connected with the output of power amplifier P1, the base stage of triode Q2 is also connected with logic switching circuit, its emitter is then connected with the grid of field effect transistor MOS1, and the output of power amplifier P3 is then connected with the positive pole of polar capacitor C6.
Described logic switching circuit is by NAND gate IC3, NAND gate IC4, triode Q3, one end is connected with the output of NAND gate IC3, the resistance R2 that the other end is connected with the collector electrode of triode Q3 after resistance R5, one end is connected with the output of NAND gate IC4, the resistance R9 that the other end is connected with the base stage of triode Q3 after resistance R6, the electric capacity C5 be in parallel with resistance R6, one end is connected with the base stage of triode Q3, the resistance R7 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q3, the resistance R8 of the external-4V voltage of the other end, and form with the electric capacity C4 that resistance R8 is in parallel, the output of described NAND gate IC2 is then connected with the negative input of NAND gate IC4 with the electrode input end of NAND gate IC3 respectively, and the negative input of NAND gate IC3 is connected with the electrode input end of NAND gate IC4, the base stage of described triode Q2 is then connected with the tie point of resistance R5 with resistance R2.
Described electric capacity C1 and electric capacity C2 is patch capacitor, and electric capacity C3, electric capacity C4 and electric capacity C5 are then electrochemical capacitor.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) overall structure of the present invention is comparatively simple, is convenient to make and apply.
(2) the present invention can effectively reduce the attenuation amplitude of amplifying signal, thus guarantees the performance of amplifying signal.
(3) the present invention can effectively reduce the interference of external electromagnetic environment, thus avoids amplifying signal to mix remaining electromagnetic wave, ensures the purity of amplifying signal.
(4) the present invention can also keep constant electric current to export after carrying out power drive amplification, then substantially increases range of application of the present invention thus.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention is by logical power amplifying circuit, the switch power amplifying circuit be connected with this logical power amplifying circuit, and the logic switching circuit be serially connected between logical power amplifying circuit and switch power amplifying circuit forms, in order to reach object of the present invention, the present invention is also connected with constant-current circuit at the output of switch power amplifying circuit.
Wherein, constant-current circuit is emphasis place of the present invention, and it comprises operational amplifier P3, operational amplifier P4, field effect transistor MOS1, field effect transistor MOS2, field effect transistor MOS3, triode Q4, triode Q5.
In order to get a desired effect, this constant-current circuit also includes one end and is connected with the drain electrode of field effect transistor MOS1, the resistance R15 of other end ground connection, P pole is connected with the source electrode of field effect transistor MOS1, N pole is then in turn through diode D3 that resistance R14 is connected with the drain electrode of field effect transistor MOS2 after resistance R16, positive pole is connected with the tie point of resistance R16 with resistance R14, the polar capacitor C6 of minus earth, one end is connected with the positive pole of polar capacitor C6, the resistance R17 that the other end is then connected with the drain electrode of field effect transistor MOS3, positive pole is connected with the P pole of diode D3, the polar capacitor C7 that negative pole is then connected with the base stage of triode Q5, and one end is connected with the collector electrode of triode Q5, the resistance R18 of other end ground connection.
It is when connecting, and the grid of this field effect transistor MOS1 is connected with switch power amplifying circuit, its source electrode is then connected with the positive pole of operational amplifier P3.The negative pole of operational amplifier P3 is connected with the drain electrode of field effect transistor MOS2, its positive pole is then connected with the positive pole of operational amplifier P4, its output is then connected with the grid of field effect transistor MOS2.The base stage of described triode Q4 is respectively with the source electrode of field effect transistor MOS2 and the emitter of triode Q5 is connected, its emitter is then connected with the source electrode of field effect transistor MOS3, its grounded collector; The described output of operational amplifier P4 is connected with the grid of field effect transistor MOS3, its negative pole is then connected with the drain electrode of field effect transistor MOS3.The positive pole of described polar capacitor C6 is also connected with switch power amplifying circuit, then forms complete constant-current circuit thus.
Wherein, operational amplifier P3, operational amplifier P4, field effect transistor MOS2 and field effect transistor MOS3 form a stable galvanostat.And the resistance of resistance R16 and resistance R17 is set to equal, the present embodiment is set to 1K Ω because the resistance of resistance R16 and resistance R17 is equal, so its to be input to the electric current of field effect transistor MOS2 and field effect transistor MOS3 equal.Meanwhile, due to the pressure stabilization function of field effect transistor MOS1 and polar capacitor C7, the voltage being input to triode Q5 is made to become stable.In addition, because the emitter of triode Q5 and triode Q4 exports Low ESR, therefore galvanostat do not amplified after Electromagnetic Interference, thus constant electric current can be exported, to ensure the normal operation of post facility, and improve the scope of application of the present invention.
Wherein, described logical power amplifying circuit is by power amplifier P1, NAND gate IC1, NAND gate IC2, N pole is connected with the output of power amplifier P1, the diode D2 that P pole is connected with the negative input of NAND gate IC1 after resistance R12, one end is connected with the electrode input end of NAND gate IC1, the resistance R13 that the other end is connected with the output of NAND gate IC2 after electric capacity C2, one end is connected with the output of NAND gate IC1, the resistance R10 that the other end is connected with the tie point of electric capacity C2 with resistance R13, and one end is connected with the negative input of power amplifier P1, the resistance R11 of other end ground connection forms, the output of described power amplifier P1 is connected with switch power amplifying circuit, the output of NAND gate IC2 is then connected with logic switching circuit, simultaneously, the output of NAND gate IC1 is also connected with the electrode input end of NAND gate IC2, and the negative input of NAND gate IC2 forms total input together with the electrode input end of power amplifier P1.
Described switch power amplifying circuit is by power amplifier P2, power amplifier P3, be serially connected in the resistance R1 between the output of power amplifier P2 and negative input and electric capacity C1, base stage is connected with the output of power amplifier P2, the triode Q1 that collector electrode is connected with the electrode input end of power amplifier P3 after resistance R3, base stage is connected with the emitter of triode Q1, the triode Q2 that collector electrode is connected with the negative input of power amplifier P3 after resistance R4, positive pole is connected with the negative input of power amplifier P3, and negative pole is connected with the emitter of triode Q2 and the electric capacity C3 of ground connection, and N pole is connected with the collector electrode of triode Q1, the diode D1 of the extremely external-4V voltage of P forms.
In order to better implement the present invention, the electrode input end of described power amplifier P2 is connected with the output of power amplifier P1, the base stage of triode Q2 is also connected with logic switching circuit, its emitter is then connected with the grid of field effect transistor MOS1, and the output of power amplifier P3 is then connected with the positive pole of polar capacitor C6.
Described logic switching circuit is by NAND gate IC3, NAND gate IC4, triode Q3, one end is connected with the output of NAND gate IC3, the resistance R2 that the other end is connected with the collector electrode of triode Q3 after resistance R5, one end is connected with the output of NAND gate IC4, the resistance R9 that the other end is connected with the base stage of triode Q3 after resistance R6, the electric capacity C5 be in parallel with resistance R6, one end is connected with the base stage of triode Q3, the resistance R7 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q3, the resistance R8 of the external-4V voltage of the other end, and form with the electric capacity C4 that resistance R8 is in parallel.
During connection, the output of this NAND gate IC2 needs to be connected with the negative input of NAND gate IC4 with the electrode input end of NAND gate IC3 respectively, and the negative input of NAND gate IC3 is connected with the electrode input end of NAND gate IC4; The base stage of described triode Q2 is then connected with the tie point of resistance R5 with resistance R2.
For guaranteeing result of use, electric capacity C1 of the present invention and electric capacity C2 all preferentially adopts patch capacitor to realize, and electric capacity C3, electric capacity C4 and electric capacity C5 then all preferentially adopt electrochemical capacitor to realize.
As mentioned above, just the present invention can well be realized.
Claims (5)
1. the power amplification formula logic system based on constant-current circuit, it is by logical power amplifying circuit, the switch power amplifying circuit be connected with this logical power amplifying circuit, and the logic switching circuit be serially connected between logical power amplifying circuit and switch power amplifying circuit forms, it is characterized in that: be also connected with constant-current circuit at the output of switch power amplifying circuit, described constant-current circuit is by operational amplifier P3, operational amplifier P4, field effect transistor MOS1, field effect transistor MOS2, field effect transistor MOS3, triode Q4, triode Q5, one end is connected with the drain electrode of field effect transistor MOS1, the resistance R15 of other end ground connection, P pole is connected with the source electrode of field effect transistor MOS1, N pole is then in turn through diode D3 that resistance R14 is connected with the drain electrode of field effect transistor MOS2 after resistance R16, positive pole is connected with the tie point of resistance R16 with resistance R14, the polar capacitor C6 of minus earth, one end is connected with the positive pole of polar capacitor C6, the resistance R17 that the other end is then connected with the drain electrode of field effect transistor MOS3, positive pole is connected with the P pole of diode D3, the polar capacitor C7 that negative pole is then connected with the base stage of triode Q5, and one end is connected with the collector electrode of triode Q5, the resistance R18 of other end ground connection forms, the grid of described field effect transistor MOS1 is connected with switch power amplifying circuit, its source electrode is then connected with the positive pole of operational amplifier P3, the negative pole of operational amplifier P3 is connected with the drain electrode of field effect transistor MOS2, its positive pole is then connected with the positive pole of operational amplifier P4, its output is then connected with the grid of field effect transistor MOS2, the base stage of described triode Q4 is respectively with the source electrode of field effect transistor MOS2 and the emitter of triode Q5 is connected, its emitter is then connected with the source electrode of field effect transistor MOS3, its grounded collector, the described output of operational amplifier P4 is connected with the grid of field effect transistor MOS3, its negative pole is then connected with the drain electrode of field effect transistor MOS3, the positive pole of described polar capacitor C6 is also connected with switch power amplifying circuit.
2. a kind of power amplification formula logic system based on constant-current circuit according to claim 1, it is characterized in that, described logical power amplifying circuit is by power amplifier P1, NAND gate IC1, NAND gate IC2, N pole is connected with the output of power amplifier P1, the diode D2 that P pole is connected with the negative input of NAND gate IC1 after resistance R12, one end is connected with the electrode input end of NAND gate IC1, the resistance R13 that the other end is connected with the output of NAND gate IC2 after electric capacity C2, one end is connected with the output of NAND gate IC1, the resistance R10 that the other end is connected with the tie point of electric capacity C2 with resistance R13, and one end is connected with the negative input of power amplifier P1, the resistance R11 of other end ground connection forms, the output of described power amplifier P1 is connected with switch power amplifying circuit, the output of NAND gate IC2 is then connected with logic switching circuit, simultaneously, the output of NAND gate IC1 is also connected with the electrode input end of NAND gate IC2, and the negative input of NAND gate IC2 forms total input together with the electrode input end of power amplifier P1.
3. a kind of power amplification formula logic system based on constant-current circuit according to claim 2, it is characterized in that, described switch power amplifying circuit is by power amplifier P2, power amplifier P3, be serially connected in the resistance R1 between the output of power amplifier P2 and negative input and electric capacity C1, base stage is connected with the output of power amplifier P2, the triode Q1 that collector electrode is connected with the electrode input end of power amplifier P3 after resistance R3, base stage is connected with the emitter of triode Q1, the triode Q2 that collector electrode is connected with the negative input of power amplifier P3 after resistance R4, positive pole is connected with the negative input of power amplifier P3, and negative pole is connected with the emitter of triode Q2 and the electric capacity C3 of ground connection, and N pole is connected with the collector electrode of triode Q1, the diode D1 of the extremely external-4V voltage of P forms, the electrode input end of described power amplifier P2 is connected with the output of power amplifier P1, the base stage of triode Q2 is also connected with logic switching circuit, its emitter is then connected with the grid of field effect transistor MOS1, and the output of power amplifier P3 is then connected with the positive pole of polar capacitor C6.
4. a kind of power amplification formula logic system based on constant-current circuit according to claim 3, it is characterized in that, described logic switching circuit is by NAND gate IC3, NAND gate IC4, triode Q3, one end is connected with the output of NAND gate IC3, the resistance R2 that the other end is connected with the collector electrode of triode Q3 after resistance R5, one end is connected with the output of NAND gate IC4, the resistance R9 that the other end is connected with the base stage of triode Q3 after resistance R6, the electric capacity C5 be in parallel with resistance R6, one end is connected with the base stage of triode Q3, the resistance R7 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q3, the resistance R8 of the external-4V voltage of the other end, and form with the electric capacity C4 that resistance R8 is in parallel, the output of described NAND gate IC2 is then connected with the negative input of NAND gate IC4 with the electrode input end of NAND gate IC3 respectively, and the negative input of NAND gate IC3 is connected with the electrode input end of NAND gate IC4, the base stage of described triode Q2 is then connected with the tie point of resistance R5 with resistance R2.
5. a kind of power amplification formula logic system based on constant-current circuit according to claim 4, it is characterized in that, described electric capacity C1 and electric capacity C2 is patch capacitor, and electric capacity C3, electric capacity C4 and electric capacity C5 are then electrochemical capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510290573.7A CN104883145A (en) | 2014-11-23 | 2015-06-01 | Power amplified logic system based on constant current circuit |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410676618X | 2014-11-23 | ||
| CN201410676618.XA CN104410375A (en) | 2014-11-23 | 2014-11-23 | Power amplifying logical circuit |
| CN201510290573.7A CN104883145A (en) | 2014-11-23 | 2015-06-01 | Power amplified logic system based on constant current circuit |
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| Publication Number | Publication Date |
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| CN104883145A true CN104883145A (en) | 2015-09-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410676618.XA Pending CN104410375A (en) | 2014-11-23 | 2014-11-23 | Power amplifying logical circuit |
| CN201510290573.7A Withdrawn CN104883145A (en) | 2014-11-23 | 2015-06-01 | Power amplified logic system based on constant current circuit |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410676618.XA Pending CN104410375A (en) | 2014-11-23 | 2014-11-23 | Power amplifying logical circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104410375A (en) * | 2014-11-23 | 2015-03-11 | 成都创图科技有限公司 | Power amplifying logical circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6123411A (en) * | 1984-07-11 | 1986-01-31 | Nippon Telegr & Teleph Corp <Ntt> | Logical signal detecting and amplifying circuit |
| CN104410375A (en) * | 2014-11-23 | 2015-03-11 | 成都创图科技有限公司 | Power amplifying logical circuit |
| CN204304934U (en) * | 2014-11-23 | 2015-04-29 | 成都创图科技有限公司 | A kind of power amplification formula logical circuit |
-
2014
- 2014-11-23 CN CN201410676618.XA patent/CN104410375A/en active Pending
-
2015
- 2015-06-01 CN CN201510290573.7A patent/CN104883145A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6123411A (en) * | 1984-07-11 | 1986-01-31 | Nippon Telegr & Teleph Corp <Ntt> | Logical signal detecting and amplifying circuit |
| CN104410375A (en) * | 2014-11-23 | 2015-03-11 | 成都创图科技有限公司 | Power amplifying logical circuit |
| CN204304934U (en) * | 2014-11-23 | 2015-04-29 | 成都创图科技有限公司 | A kind of power amplification formula logical circuit |
Non-Patent Citations (1)
| Title |
|---|
| 精通维修下载: "精通维修下载", 《HTTP://WWW.GZWEIX.COM/ARTICLE/SORT0250/SORT0251/SORT0288/INFO-293943.HTML》 * |
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Application publication date: 20150902 |
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