CN104410375A - Power amplifying logical circuit - Google Patents
Power amplifying logical circuit Download PDFInfo
- Publication number
- CN104410375A CN104410375A CN201410676618.XA CN201410676618A CN104410375A CN 104410375 A CN104410375 A CN 104410375A CN 201410676618 A CN201410676618 A CN 201410676618A CN 104410375 A CN104410375 A CN 104410375A
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- China
- Prior art keywords
- nand gate
- resistance
- power amplifier
- output
- power
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a power amplifying logical circuit. The power amplifying logical circuit is characterized by mainly comprising a power logical amplify circuit, a switching power amplifying circuit and a logical switching circuit, wherein the switching power amplifying circuit is connected with the power logical amplifying circuit; the logical switching circuit is connected in series between the power logical amplifying circuit and the switching power amplifying circuit; the power logical amplifying circuit consists of a power amplifier P1, a NAND gate IC1, a NAND gate IC2, a diode D2 of which the pole N is connected with the output end of the power amplifier P1 and the pole P is connected with the cathode input end of the NAND gate IC1 after passing through a resistor R12, a resistor R13 of which one end is connected with the anode input end of the NAND gate IC1, and the like. The power amplifying logical circuit is simple in overall structure, and is convenient to manufacture and popularize. Meanwhile, the damping amplitude of an amplifying signal can be effectively lowered, so that the performance of the amplifying signal is ensured.
Description
Technical field
The present invention relates to a kind of amplifying circuit, specifically refer to a kind of power amplification formula logical circuit.
Background technology
At present, widely, relevant voltage signal, current signal and other pulse signals are mainly carried out power amplification by according to demand in the utilization of power amplification circuit.But, traditional power amplification circuit is after carrying out power drive amplification, and not only the attenuation amplitude of its amplifying signal is comparatively large, but also can be subject to outside electromagnetic interference, and then make amplifying signal performance comparatively unstable, serious constrains using and promoting of its profound level.
Summary of the invention
The object of the invention is to overcome the defect of the comparatively large and amplified signal unstable properties of signal attenuation amplitude after the amplification that current power amplification circuit exists, a kind of power amplification formula logical circuit is provided.
Object of the present invention is achieved through the following technical solutions: a kind of power amplification formula logical circuit, primarily of logical power amplifying circuit, the switch power amplifying circuit be connected with this logical power amplifying circuit, and the logic switching circuit be serially connected between logical power amplifying circuit and switch power amplifying circuit forms, described logical power amplifying circuit is by power amplifier P1, NAND gate IC1, NAND gate IC2, N pole is connected with the output of power amplifier P1, the diode D2 that P pole is connected with the negative input of NAND gate IC1 after resistance R12, one end is connected with the electrode input end of NAND gate IC1, the resistance R13 that the other end is connected with the output of NAND gate IC2 after electric capacity C2, one end is connected with the output of NAND gate IC1, the resistance R10 that the other end is connected with the tie point of electric capacity C2 with resistance R13, and one end is connected with the negative input of power amplifier P1, the resistance R11 of other end ground connection forms, the output of described power amplifier P1 is connected with switch power amplifying circuit, the output of NAND gate IC2 is then connected with logic switching circuit, simultaneously, the output of NAND gate IC1 is also connected with the electrode input end of NAND gate IC2, and the negative input of NAND gate IC2 forms total input together with the electrode input end of power amplifier P1.
Described switch power amplifying circuit is by power amplifier P2, power amplifier P3, be serially connected in the resistance R1 between the output of power amplifier P2 and negative input and electric capacity C1, base stage is connected with the output of power amplifier P2, the triode Q1 that collector electrode is connected with the electrode input end of power amplifier P3 after resistance R3, base stage is connected with the emitter of triode Q1, the triode Q2 that collector electrode is connected with the negative input of power amplifier P3 after resistance R4, positive pole is connected with the negative input of power amplifier P3, and negative pole is connected with the emitter of triode Q2 and the electric capacity C3 of ground connection, and N pole is connected with the collector electrode of triode Q1, the diode D1 of the extremely external-4V voltage of P forms, the electrode input end of described power amplifier P2 is connected with the output of power amplifier P1, and the base stage of triode Q2 is also connected with logic switching circuit, and the output of power amplifier P3 then forms total output.
Described logic switching circuit is by NAND gate IC3, NAND gate IC4, triode Q3, one end is connected with the output of NAND gate IC3, the resistance R2 that the other end is connected with the collector electrode of triode Q3 after resistance R5, one end is connected with the output of NAND gate IC4, the resistance R9 that the other end is connected with the base stage of triode Q3 after resistance R6, the electric capacity C5 be in parallel with resistance R6, one end is connected with the base stage of triode Q3, the resistance R7 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q3, the resistance R8 of the external-4V voltage of the other end, and form with the electric capacity C4 that resistance R8 is in parallel, the output of described NAND gate IC2 is then connected with the negative input of NAND gate IC4 with the electrode input end of NAND gate IC3 respectively, and the negative input of NAND gate IC3 is connected with the electrode input end of NAND gate IC4, the base stage of described triode Q2 is then connected with the tie point of resistance R5 with resistance R2.
Described electric capacity C1 and electric capacity C2 is patch capacitor, and electric capacity C3, electric capacity C4 and electric capacity C5 are then electrochemical capacitor.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) overall structure of the present invention is comparatively simple, is convenient to make and apply.
(2) the present invention can effectively reduce the attenuation amplitude of amplifying signal, thus guarantees the performance of amplifying signal.
(3) the present invention can effectively reduce the interference of external electromagnetic environment, thus avoids amplifying signal to mix remaining electromagnetic wave, ensures the purity of amplifying signal.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, power amplification formula logical circuit of the present invention is primarily of logical power amplifying circuit, the switch power amplifying circuit be connected with this logical power amplifying circuit, and the logic switching circuit be serially connected between logical power amplifying circuit and switch power amplifying circuit forms.
Wherein, described logical power amplifying circuit is by power amplifier P1, NAND gate IC1, NAND gate IC2, N pole is connected with the output of power amplifier P1, the diode D2 that P pole is connected with the negative input of NAND gate IC1 after resistance R12, one end is connected with the electrode input end of NAND gate IC1, the resistance R13 that the other end is connected with the output of NAND gate IC2 after electric capacity C2, one end is connected with the output of NAND gate IC1, the resistance R10 that the other end is connected with the tie point of electric capacity C2 with resistance R13, and one end is connected with the negative input of power amplifier P1, the resistance R11 of other end ground connection forms, the output of described power amplifier P1 is connected with switch power amplifying circuit, the output of NAND gate IC2 is then connected with logic switching circuit, simultaneously, the output of NAND gate IC1 is also connected with the electrode input end of NAND gate IC2, and the negative input of NAND gate IC2 forms total input together with the electrode input end of power amplifier P1.
Described switch power amplifying circuit is by power amplifier P2, power amplifier P3, be serially connected in the resistance R1 between the output of power amplifier P2 and negative input and electric capacity C1, base stage is connected with the output of power amplifier P2, the triode Q1 that collector electrode is connected with the electrode input end of power amplifier P3 after resistance R3, base stage is connected with the emitter of triode Q1, the triode Q2 that collector electrode is connected with the negative input of power amplifier P3 after resistance R4, positive pole is connected with the negative input of power amplifier P3, and negative pole is connected with the emitter of triode Q2 and the electric capacity C3 of ground connection, and N pole is connected with the collector electrode of triode Q1, the diode D1 of the extremely external-4V voltage of P forms, the electrode input end of described power amplifier P2 is connected with the output of power amplifier P1, and the base stage of triode Q2 is also connected with logic switching circuit, and the output of power amplifier P3 then forms total output.
Described logic switching circuit is by NAND gate IC3, NAND gate IC4, triode Q3, one end is connected with the output of NAND gate IC3, the resistance R2 that the other end is connected with the collector electrode of triode Q3 after resistance R5, one end is connected with the output of NAND gate IC4, the resistance R9 that the other end is connected with the base stage of triode Q3 after resistance R6, the electric capacity C5 be in parallel with resistance R6, one end is connected with the base stage of triode Q3, the resistance R7 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q3, the resistance R8 of the external-4V voltage of the other end, and form with the electric capacity C4 that resistance R8 is in parallel, the output of described NAND gate IC2 is then connected with the negative input of NAND gate IC4 with the electrode input end of NAND gate IC3 respectively, and the negative input of NAND gate IC3 is connected with the electrode input end of NAND gate IC4, the base stage of described triode Q2 is then connected with the tie point of resistance R5 with resistance R2.
For guaranteeing result of use, electric capacity C1 of the present invention and electric capacity C2 all preferentially adopts patch capacitor to realize, and electric capacity C3, electric capacity C4 and electric capacity C5 then all preferentially adopt electrochemical capacitor to realize.
As mentioned above, just the present invention can well be realized.
Claims (4)
1. a power amplification formula logical circuit, it is characterized in that, primarily of logical power amplifying circuit, the switch power amplifying circuit be connected with this logical power amplifying circuit, and the logic switching circuit be serially connected between logical power amplifying circuit and switch power amplifying circuit forms, described logical power amplifying circuit is by power amplifier P1, NAND gate IC1, NAND gate IC2, N pole is connected with the output of power amplifier P1, the diode D2 that P pole is connected with the negative input of NAND gate IC1 after resistance R12, one end is connected with the electrode input end of NAND gate IC1, the resistance R13 that the other end is connected with the output of NAND gate IC2 after electric capacity C2, one end is connected with the output of NAND gate IC1, the resistance R10 that the other end is connected with the tie point of electric capacity C2 with resistance R13, and one end is connected with the negative input of power amplifier P1, the resistance R11 of other end ground connection forms, the output of described power amplifier P1 is connected with switch power amplifying circuit, the output of NAND gate IC2 is then connected with logic switching circuit, simultaneously, the output of NAND gate IC1 is also connected with the electrode input end of NAND gate IC2, and the negative input of NAND gate IC2 forms total input together with the electrode input end of power amplifier P1.
2. a kind of power amplification formula logical circuit according to claim 1, it is characterized in that, described switch power amplifying circuit is by power amplifier P2, power amplifier P3, be serially connected in the resistance R1 between the output of power amplifier P2 and negative input and electric capacity C1, base stage is connected with the output of power amplifier P2, the triode Q1 that collector electrode is connected with the electrode input end of power amplifier P3 after resistance R3, base stage is connected with the emitter of triode Q1, the triode Q2 that collector electrode is connected with the negative input of power amplifier P3 after resistance R4, positive pole is connected with the negative input of power amplifier P3, and negative pole is connected with the emitter of triode Q2 and the electric capacity C3 of ground connection, and N pole is connected with the collector electrode of triode Q1, the diode D1 of the extremely external-4V voltage of P forms, the electrode input end of described power amplifier P2 is connected with the output of power amplifier P1, and the base stage of triode Q2 is also connected with logic switching circuit, and the output of power amplifier P3 then forms total output.
3. a kind of power amplification formula logical circuit according to claim 2, it is characterized in that, described logic switching circuit is by NAND gate IC3, NAND gate IC4, triode Q3, one end is connected with the output of NAND gate IC3, the resistance R2 that the other end is connected with the collector electrode of triode Q3 after resistance R5, one end is connected with the output of NAND gate IC4, the resistance R9 that the other end is connected with the base stage of triode Q3 after resistance R6, the electric capacity C5 be in parallel with resistance R6, one end is connected with the base stage of triode Q3, the resistance R7 of the external-4V voltage of the other end, one end is connected with the emitter of triode Q3, the resistance R8 of the external-4V voltage of the other end, and form with the electric capacity C4 that resistance R8 is in parallel, the output of described NAND gate IC2 is then connected with the negative input of NAND gate IC4 with the electrode input end of NAND gate IC3 respectively, and the negative input of NAND gate IC3 is connected with the electrode input end of NAND gate IC4, the base stage of described triode Q2 is then connected with the tie point of resistance R5 with resistance R2.
4. a kind of power amplification formula logical circuit according to claim 3, it is characterized in that, described electric capacity C1 and electric capacity C2 is patch capacitor, and electric capacity C3, electric capacity C4 and electric capacity C5 are then electrochemical capacitor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410676618.XA CN104410375A (en) | 2014-11-23 | 2014-11-23 | Power amplifying logical circuit |
| CN201510290573.7A CN104883145A (en) | 2014-11-23 | 2015-06-01 | Power amplified logic system based on constant current circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410676618.XA CN104410375A (en) | 2014-11-23 | 2014-11-23 | Power amplifying logical circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104410375A true CN104410375A (en) | 2015-03-11 |
Family
ID=52647977
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410676618.XA Pending CN104410375A (en) | 2014-11-23 | 2014-11-23 | Power amplifying logical circuit |
| CN201510290573.7A Withdrawn CN104883145A (en) | 2014-11-23 | 2015-06-01 | Power amplified logic system based on constant current circuit |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510290573.7A Withdrawn CN104883145A (en) | 2014-11-23 | 2015-06-01 | Power amplified logic system based on constant current circuit |
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| Country | Link |
|---|---|
| CN (2) | CN104410375A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104883145A (en) * | 2014-11-23 | 2015-09-02 | 成都冠深科技有限公司 | Power amplified logic system based on constant current circuit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6123411A (en) * | 1984-07-11 | 1986-01-31 | Nippon Telegr & Teleph Corp <Ntt> | Logical signal detecting and amplifying circuit |
| CN104410375A (en) * | 2014-11-23 | 2015-03-11 | 成都创图科技有限公司 | Power amplifying logical circuit |
| CN204304934U (en) * | 2014-11-23 | 2015-04-29 | 成都创图科技有限公司 | A kind of power amplification formula logical circuit |
-
2014
- 2014-11-23 CN CN201410676618.XA patent/CN104410375A/en active Pending
-
2015
- 2015-06-01 CN CN201510290573.7A patent/CN104883145A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104883145A (en) * | 2014-11-23 | 2015-09-02 | 成都冠深科技有限公司 | Power amplified logic system based on constant current circuit |
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| Publication number | Publication date |
|---|---|
| CN104883145A (en) | 2015-09-02 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150311 |