CN104882517B - The manufacture method of light emitting diode (LED) chip with vertical structure - Google Patents
The manufacture method of light emitting diode (LED) chip with vertical structure Download PDFInfo
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- CN104882517B CN104882517B CN201510145435.XA CN201510145435A CN104882517B CN 104882517 B CN104882517 B CN 104882517B CN 201510145435 A CN201510145435 A CN 201510145435A CN 104882517 B CN104882517 B CN 104882517B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract
Present invention is disclosed a kind of manufacture method of light emitting diode (LED) chip with vertical structure.Including：Front-end architecture is provided, the front-end architecture includes the first substrate, is formed at the functional layer in first substrate face；Second substrate is provided, is mutually bonded with the front-end architecture by the functional layer；The laser beam for being less than or equal to 150 μm of square using hot spot is irradiated to the front-end architecture, to peel off first substrate.Because the hot spot of use is smaller, the damage to front-end architecture in stripping process is reduced, so as to be conducive to being lifted the yield of obtained light emitting diode (LED) chip with vertical structure.In addition, the limitation being aligned when also eliminating stripping to Cutting Road, improves the operability of laser lift-off.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of manufacture method of light emitting diode (LED) chip with vertical structure.
Background technology
It is well known that traditional formal dress structure LED chip is due to the restriction that Sapphire Substrate is non-conductive, thermal conductivity is poor,
There is the birth defects such as the uneven, poor radiation of CURRENT DISTRIBUTION.In order to overcome these deficiencies of formal dress structure LED chip, in the industry
All at active development vertical structure LED (hereinafter referred to as V-LED).V-LED is using high conductivity, radiating good Si or metal
Substrate, so that substrate heat conduction is good, PN junction heat dissipation problem is resolved, and large scale power cake core is achieved.
V-LED as luminous semiconductor device study hotspot, by exploitation for many years, the preparation skill of current comparative maturity
Art is substrate transfer technology：It is first using metal co-melting crystal technique that the epitaxial wafer of Sapphire Substrate and conductive, heat conductivility is excellent
Bonded substrate bonding get up, the characteristics of sapphire is different from the energy gap of gallium nitride are recycled, from the sharp of specific wavelength
Light, makes to decompose with the gallium nitride near sapphire contact face, reaches the purpose for peeling off original Sapphire Substrate, epitaxial layer
It is transferred in thermal conductivity and the good good bonded substrate of electric conductivity.
Sapphire Substrate common at present, which is peeled off, uses following principle：Gallium nitride absorbs energy under laser irradiation, decomposes
For gallium and nitrogen, so that Sapphire Substrate is separated with gallium nitride layer.In the moment of separation, the nitrogen abrupt release of generation,
Gas shock is produced, simultaneously because thermal expansion factor is different between the HTHP and each material that are subjected to during early stage wafer bonding
Etc. reason, a large amount of stress accumulated in wafer can also discharge at this moment.Evil can be produced to epitaxy of gallium nitride Rotating fields and performance
Bad Micro influence, causes serious drain, and this is also the reason for current V-LED overall yields of limitation are difficult to lifting.
As shown in figure 1, the influence in order to reduce gas shock and stress release as far as possible, a kind of current preferred approach
It is irradiated for the laser using the area of hot spot 2 slightly larger than a unit (die) 1 in wafer, and each hot spot 2 is existed
Cutting Road 3 produce it is overlapping, to reduce the influence to epitaxial layer of gallium nitride as far as possible.But, this method operation is simultaneously inconvenient,
And the variation, size with LED structure are also varied, cause the limitation of this method increasing, it is difficult to meet
Production requirement.
The content of the invention
It is an object of the present invention to provide a kind of manufacture method of light emitting diode (LED) chip with vertical structure so that when removing substrate more
For facility, while influence of the reduction to chip performance.
In order to solve the above technical problems, the present invention provides a kind of manufacture method of light emitting diode (LED) chip with vertical structure, including：
Front-end architecture is provided, the front-end architecture includes the first substrate, is formed at the function in first substrate face
Layer；
Second substrate is provided, is mutually bonded with the front-end architecture by the functional layer；
The laser beam for being less than or equal to 150 μm of square using hot spot is irradiated to the front-end architecture, to peel off described the
One substrate.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, the wavelength of the laser beam is less than or equal to
355nm。
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, the uniformity of the hot spot is less than or equal to
5%.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, the functional layer includes stacking gradually to be formed
Expand in the undoped gallium nitride layer in first substrate face, n type gallium nitride layer, quantum well layer, p-type gallium nitride layer, electric current
Open up layer, speculum and metal bonding layer.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, second substrate passes through metal bonding layer
Mutually it is bonded with the front-end architecture.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, after the second substrate bonding, the is being peeled off
Before one substrate, in addition to：
First substrate back is polished to smooth no marking.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, after the first substrate is peeled off, in addition to：
Remove the gallium produced after the first substrate desquamation；
Undoped gallium nitride layer is etched, n type gallium nitride layer is exposed；
Surface coarsening processing is carried out to the n type gallium nitride layer exposed；
N electrode is formed, and passivation layer is deposited.
There is provided the front-end architecture for including the first substrate in the manufacture method for the light emitting diode (LED) chip with vertical structure that the present invention is provided,
After front-end architecture and the second substrate bonding, the laser beam for being less than or equal to 150 μm of square using hot spot is carried out to the front-end architecture
Irradiation, to peel off first substrate.Compared with prior art, because the hot spot of use is smaller, reduce in stripping process to preceding
The damage of end structure, so as to be conducive to being lifted the yield of obtained light emitting diode (LED) chip with vertical structure.In addition, when also eliminating stripping pair
The limitation of Cutting Road alignment, improves the operability of laser lift-off.
Brief description of the drawings
Fig. 1 is schematic diagram of the light emitting diode (LED) chip with vertical structure of the prior art in substrate desquamation；
Fig. 2 is the flow chart of the manufacture method of light emitting diode (LED) chip with vertical structure in the embodiment of the present invention；
Fig. 3-Fig. 8 be light emitting diode (LED) chip with vertical structure in the embodiment of the present invention manufacture method during device architecture show
It is intended to.
Embodiment
The manufacture method of the light emitting diode (LED) chip with vertical structure of the present invention is described in more detail below in conjunction with schematic diagram,
Which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change invention described herein,
And still realize the advantageous effects of the present invention.Therefore, description below is appreciated that for the extensive of those skilled in the art
Know, and be not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to relevant system or relevant business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
The present invention core concept be there is provided a kind of manufacture method of light emitting diode (LED) chip with vertical structure, including：
Step S101 is there is provided front-end architecture, and the front-end architecture includes the first substrate, is formed at first substrate face
On functional layer；
Step S102 is mutually bonded there is provided the second substrate by the functional layer with the front-end architecture；
Step S103, the laser beam for being less than or equal to 150 μm of square using hot spot is irradiated to the front-end architecture, to shell
From first substrate.
The preferred embodiment of the manufacture method of the light emitting diode (LED) chip with vertical structure is exemplified below, with the clear explanation present invention's
Content, it is understood that, present disclosure is not restricted to following examples, and other pass through those of ordinary skill in the art
Conventional technical means improvement also the present invention thought range within.
Fig. 2 is refer to, and combines Fig. 3-Fig. 8, wherein Fig. 2 is the manufacture of light emitting diode (LED) chip with vertical structure in the embodiment of the present invention
The flow chart of method；Fig. 3~Fig. 8 be the embodiment of the present invention in light emitting diode (LED) chip with vertical structure manufacture method during device junction
The schematic diagram of structure.
As shown in Fig. 2 the manufacture method of the light emitting diode (LED) chip with vertical structure includes：
First, Fig. 3 is refer to, step S101 is performed there is provided front-end architecture, the front-end architecture includes the first substrate 10,
It is formed at the functional layer 11 on the front of the first substrate 10；Preferably, the first substrate 10 can select as Sapphire Substrate,
Sapphire Substrate is used in silicon substrate, silicon-carbon substrate or patterned substrate, the present embodiment.Functional layer 11 includes sequentially forming
In the undoped gallium nitride layer (U-GaN) 110 on the front of the first substrate 10, n type gallium nitride layer (N-GaN) 111, quantum well layer
(MQW) 112, P types gallium nitride layer (P-GaN) 113, current extending 114, speculum 115 and metal bonding layer 116.Specifically
, the undoped gallium nitride layer 110, n type gallium nitride layer 111, quantum well layer 112 and p-type gallium nitride layer 113 can be used
The growing methods such as MOCVD/MBE molecular beam epitaxies are sequentially formed, and the material of the current extending 114 for example can be that ITO (mixes
Tin indium oxide), low resistance, the thin-films Oxygen compound of high transmission rate such as zinc oxide (ZnO) or AZO (Al-Doped ZnO), can pass through
Sputtering (Sputter) mode or plasma assisted deposition (RPD) mode are formed.The material of the speculum 115 for example can be with
It is aluminium (Al), silver-colored (Ag), can be formed by being deposited.Or the selection of speculum 115 is distributed bragg reflector mirror (DBR).
The material of the metal bonding layer 116 for example can be golden (Au), tin (Sn) or gold-tin alloy.
Then, Fig. 4 is refer to, step S102 is performed there is provided the second substrate 12, passes through the functional layer 11 and the front end
Structure is mutually bonded；Specifically, the material of second substrate 12 can include silicon (Si), copper (Cu), tungsten (W) or molybdenum (Mo)
Deng so as to possess preferable heat conduction and electric conductivity.Second substrate 12 is especially by metal bonding layer 116 and the front-end architecture key
It is combined.
Then, it refer to Fig. 5, perform step S103, the laser beam of 150 μm of square is less than or equal to before described using hot spot
End structure is irradiated, to peel off first substrate.Preferably, before first substrate is peeled off, first by described first
Substrate back is polished to smooth no marking, prevents from influenceing the hot spot of laser beam due to rough surface.Wherein figure 5 show vertical
The top view of structure LED chip, including multiple units (Die) 13, in the present invention, the laser beam spot 15 of use are less than or equal to
150 μm of square, therefore, the area very little of hot spot 15, then after being irradiated between the first substrate and gallium nitride so that gallium nitride point
Solution, the amount of the gas (nitrogen) discharged is just seldom, so as to ensure impulsive force very little, and make it that stress release is more slow
With, also just reduce the damage to gallium nitride material, reached reduction electric leakage risk purpose.Due to the small light spot pair of the present invention
The influence very little of gallium nitride, therefore, unlike as needing to overlap hot spot on Cutting Road 14 in the prior art, but can be with
Directly one unit 13 is irradiated successively using laser beam, therefore greatly reduces Operating Complexity, operability is improved.It is preferred that
, in the present invention, the wavelength of the laser beam of use is less than or equal to 355nm, such as selection is 248nm, 355nm, and causes
The uniformity of the hot spot 15 is less than or equal to 5%, so as to obtain more preferably peeling effect.As shown in fig. 6, first substrate
Be stripped, second substrate 12 as light emitting diode (LED) chip with vertical structure substrate.
After the first substrate is peeled off, in addition to：Remove the gallium (Ga) produced after the first substrate desquamation.Wet method can be used
Process is removed, and is related to solution gallium and the acid or alkali of reaction such as including HCL also possible.
Afterwards, as shown in fig. 7, etching the undoped gallium nitride layer, n type gallium nitride layer 111 is exposed.This is etched
Journey can be whole face etching, or graphically etch, and whole face etching is used in the embodiment of the present invention.Treat n type gallium nitride layer
After 111 expose, surface coarsening processing is carried out to the n type gallium nitride layer 111 exposed.For example with potassium hydroxide (KOH)
Solution, sulfuric acid (H2SO4) solution etc., rough surface 16 is obtained, to improve light emission rate.
Finally, as shown in figure 8, forming N electrode 17 on n type gallium nitride layer 111 after surface coarsening, its material for example may be used
To be nickel (Ni)/gold (Au), aluminium (Al)/titanium (Ti)/platinum (Pt)/gold (Au), chromium (Cr)/platinum (Pt)/gold (Au) etc..And be deposited blunt
Change the n type gallium nitride layer 111 after layer 18, covering surface coarsening, the material of the passivation layer 18 for example can be silica.
Thus, light emitting diode (LED) chip with vertical structure manufacture of the invention is completed, and is less than or equal to 150 μm of square by using hot spot
Laser beam is irradiated to the front-end architecture, to peel off first substrate.Compared with prior art, due to use hot spot compared with
It is small, the damage to front-end architecture in stripping process is reduced, so as to be conducive to lifting the good of obtained light emitting diode (LED) chip with vertical structure
Rate.In addition, the limitation being aligned when also eliminating stripping to Cutting Road, improves the operability of laser lift-off.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (6)
1. a kind of manufacture method of light emitting diode (LED) chip with vertical structure, including：
Front-end architecture is provided, the front-end architecture includes the first substrate, is formed at the functional layer in first substrate face；
Second substrate is provided, is mutually bonded with the front-end architecture by the functional layer；
The laser beam for being less than or equal to 150 μm of square using hot spot is irradiated to the front-end architecture, to peel off first lining
Bottom, the uniformity of the hot spot is less than or equal to 5%.
2. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 1, it is characterised in that the wavelength of the laser beam
Less than or equal to 355nm.
3. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 1, it is characterised in that the functional layer include according to
Secondary stacking is formed at undoped gallium nitride layer, n type gallium nitride layer, quantum well layer, p-type gallium nitride in first substrate face
Layer, current extending, speculum and metal bonding layer.
4. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 3, it is characterised in that second substrate passes through
Metal bonding layer is mutually bonded with the front-end architecture.
5. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 1, it is characterised in that after the second substrate bonding,
Before the first substrate is peeled off, in addition to：
First substrate back is polished to smooth no marking.
6. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 1, it is characterised in that peel off the first substrate it
Afterwards, in addition to：
Remove the gallium produced after the first substrate desquamation；
Undoped gallium nitride layer is etched, n type gallium nitride layer is exposed；
Surface coarsening processing is carried out to the n type gallium nitride layer exposed；
N electrode is formed, and passivation layer is deposited.
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| CN201510145435.XA CN104882517B (en) | 2015-03-30 | 2015-03-30 | The manufacture method of light emitting diode (LED) chip with vertical structure |
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| CN104882517B true CN104882517B (en) | 2017-10-31 |
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| CN106328776B (en) * | 2016-08-31 | 2019-04-09 | 中联西北工程设计研究院有限公司 | A kind of preparation method of vertical structure purple LED chip |
| CN106449899B (en) * | 2016-08-31 | 2019-07-02 | 中联西北工程设计研究院有限公司 | A kind of preparation method of vertical structure blue-light LED chip |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740331A (en) * | 2008-11-07 | 2010-06-16 | 东莞市中镓半导体科技有限公司 | Method for nondestructively peeling GaN and sapphire substrate by solid laser |
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| JP2003168820A (en) * | 2001-12-03 | 2003-06-13 | Sony Corp | Stripping method, laser light irradiating method, and method for fabricating element using these method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740331A (en) * | 2008-11-07 | 2010-06-16 | 东莞市中镓半导体科技有限公司 | Method for nondestructively peeling GaN and sapphire substrate by solid laser |
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