CN110993760A - High-power flip LED chip with temperature monitoring function and preparation method thereof - Google Patents
High-power flip LED chip with temperature monitoring function and preparation method thereof Download PDFInfo
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- CN110993760A CN110993760A CN201911385775.4A CN201911385775A CN110993760A CN 110993760 A CN110993760 A CN 110993760A CN 201911385775 A CN201911385775 A CN 201911385775A CN 110993760 A CN110993760 A CN 110993760A
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention provides a high-power flip LED chip with temperature monitoring function, which comprises a substrate layer; an N-GaN layer, a quantum well layer and a P-GaN layer are sequentially grown on the substrate layer; a reflecting layer is arranged on the P-GaN layer; the quantum well layer, the P-GaN layer and the reflecting layer are coated by the first insulating layer; an interconnection electrode layer is arranged on the first insulating layer; the interconnection electrode layer penetrates through the first insulating layer and is respectively connected with the reflecting layer and the N-GaN layer; the interconnection electrode layer is coated by the second insulating layer; the second insulating layer is provided with an extraction electrode layer; the extraction electrode layer comprises two pad electrodes which penetrate through the second insulating layer and are respectively connected with the interconnection electrode layer, and two thermal resistance monitoring electrodes which penetrate through the second insulating layer, the interconnection electrode layer, the first insulating layer, the reflecting layer, the P-GaN layer, the quantum well layer and the N-GaN layer and are respectively connected with the quantum well layer and the N-GaN layer; and a temperature detecting joint is formed at the joint of the two thermal resistance monitoring electrodes and the N-GaN layer. The invention realizes the real-time monitoring of the junction temperature of the LED chip.
Description
Technical Field
The invention relates to an LED chip, in particular to a high-power flip LED chip with temperature monitoring and a preparation method thereof.
Background
Under the application scene of the ultra-high power LED light source, because of the high-density integration characteristic, the temperature of the light source substrate and the lamp shell is only monitored, and whether the local overheating problem exists or not can not be effectively judged.
Local overheating often results in failure of one or more LED chips.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a high-power flip LED chip with temperature monitoring function and a preparation method thereof. The technical scheme adopted by the invention is as follows:
the embodiment of the invention provides a high-power flip LED chip with temperature monitoring function, which comprises a substrate layer;
an N-GaN layer, a quantum well layer and a P-GaN layer are sequentially grown on the substrate layer;
a reflecting layer is arranged on the P-GaN layer; the quantum well layer, the P-GaN layer and the reflecting layer are coated by a first insulating layer;
an interconnection electrode layer is arranged on the first insulating layer; the interconnection electrode layer penetrates through the first insulating layer and is respectively connected with the reflecting layer and the N-GaN layer;
the interconnection electrode layer is coated by a second insulating layer;
an extraction electrode layer is arranged on the second insulating layer; the extraction electrode layer comprises two pad electrodes which penetrate through the second insulating layer and are respectively connected with the interconnection electrode layer, and two thermal resistance monitoring electrodes which penetrate through the second insulating layer, the interconnection electrode layer, the first insulating layer, the reflecting layer, the P-GaN layer, the quantum well layer and the N-GaN layer and are respectively connected with the quantum well layer and the N-GaN layer;
and a temperature detecting joint is formed at the joint of the two thermal resistance monitoring electrodes and the N-GaN layer.
Further, the connection position of the thermal resistance monitoring electrode and the N-GaN layer is positioned in the central area of the N-GaN layer.
Further, the metal layer of the interconnection electrode layer is Cr/Al/Ti/Pt/Au/Pt in sequence, wherein the thickness of Au is not less than 1 μm.
Furthermore, the metal layer of the extraction electrode layer is Cr/Al/Ti/Pt/Ni/Au/, wherein the thickness of Ni is not less than 300 nm.
The embodiment of the invention also provides a preparation method of the high-power flip LED chip with temperature monitoring, which is characterized in that,
step 1, sequentially growing an N-GaN layer, a quantum well layer and a P-GaN layer on a substrate layer by using MOCVD equipment to form a complete LED epitaxial structure;
step 3, manufacturing a reflection layer graph by using a negative photoresist mask method, and manufacturing a reflection layer by using a magnetron sputtering process, wherein the reflection layer is provided with a channel for going to the N-GaN layer;
step 4, preparing a first insulating layer on the surface of the wafer by utilizing a PECVD (plasma enhanced chemical vapor deposition) process, manufacturing a corrosion pattern by a positive photoresist mask method, and then carrying out through hole corrosion on the first insulating layer to form a channel for going to the N-GaN layer and a channel for going to the reflecting layer;
the extraction electrode layer comprises two pad electrodes and two thermal resistance monitoring electrodes; wherein the two pad electrodes penetrate through the second insulating layer and are respectively connected with the interconnection electrode layer; the two thermal resistance monitoring electrodes penetrate through the second insulating layer, the interconnection electrode layer, the first insulating layer, the reflecting layer, the P-GaN layer and the quantum well layer and are respectively connected with the N-GaN layer.
Further, the metal of the reflecting layer is Ag/TiW.
Further, the first insulating layer is a SiO2/SiNx insulating layer.
Further, the metal layer of the interconnection electrode layer is Cr/Al/Ti/Pt/Au/Pt in sequence, wherein the thickness of Au is not less than 1 μm.
Further, the second insulating layer is an SiO2/SiNx insulating layer.
Furthermore, the metal layer of the extraction electrode layer is Cr/Al/Ti/Pt/Ni/Au/, wherein the thickness of Ni is not less than 300 nm.
The invention has the advantages that: according to the invention, by utilizing the negative temperature characteristic of the N-GaN impedance, the temperature detecting joint for monitoring the junction temperature of the LED chip is arranged at the center of the high-power flip LED chip, so that the real-time monitoring of the junction temperature of the LED chip is realized, and the design of the driving circuit is matched, so that the driving current can be adjusted while the junction temperature of the chip is monitored in real time, and the problem of local overheating and failure of a high-power light source is solved.
Drawings
Fig. 1 is one of the cross-sectional views of the present invention.
Fig. 2 is a second cross-sectional view of the present invention.
FIG. 3 is a schematic diagram of the present invention etching and exposing the N-GaN layer.
FIG. 4 is a schematic diagram of fabricating a reflective layer according to the present invention.
FIG. 5 is a schematic diagram of fabricating a first insulating layer according to the present invention.
FIG. 6 is a schematic diagram of fabricating an interconnect electrode layer according to the present invention.
FIG. 7 is a schematic diagram of preparing a second insulating layer according to the present invention.
FIG. 8 is a schematic diagram of fabricating an extraction electrode layer according to the present invention.
Detailed Description
The invention is further illustrated by the following specific figures and examples.
The embodiment of the invention provides a preparation method of a high-power flip LED chip with temperature monitoring, wherein in the following method, a wafer refers to a structure of an intermediate step before an LED chip is not finished;
the method comprises the following steps:
step 1, sequentially growing an N-GaN layer 2, a quantum well layer 3 and a P-GaN layer 4 on a sapphire substrate layer 1 by using MOCVD equipment to form a complete LED epitaxial structure;
the light emitting wavelength can be changed by changing the temperature and the In and Al compositions In the growth process of the quantum well layer 3;
FIG. 3 shows the mask pattern of this step with blank regions 13;
step 3, utilizing a negative photoresist mask method to manufacture a reflection layer pattern, and manufacturing a reflection layer 5 through a magnetron sputtering process, wherein a channel for going to the N-GaN layer 2 is arranged on the reflection layer 5;
the metal of the reflecting layer is generally Ag/TiW, and a channel 501 leading to the N-GaN layer 2 is formed on the reflecting layer 5 in FIG. 4;
step 4, preparing a first insulating layer 6 on the surface of the wafer by utilizing a PECVD (plasma enhanced chemical vapor deposition) process, manufacturing a corrosion pattern by a positive photoresist mask method, and performing through hole corrosion on the first insulating layer 6 by using a BOE (biaxially oriented film) solution to form a channel 601 for going to the N-GaN layer 2 and a channel 602 for going to the reflecting layer 5; as shown in fig. 5;
the first insulating layer 6 is a SiO2/SiNx insulating layer;
the metal layer of the interconnection electrode layer 7 is sequentially Cr/Al/Ti/Pt/Au/Pt, wherein the thickness of Au is not less than 1 μm;
the second insulating layer 8 is a SiO2/SiNx insulating layer;
the extraction electrode layer comprises two pad electrodes 9 and 10 and two thermal resistance monitoring electrodes 11 and 12; two pad electrodes 9 and 10 penetrate through the second insulating layer 8 and are respectively connected with the interconnection electrode layer 7; the two thermal resistance monitoring electrodes 11 and 12 penetrate through the second insulating layer 8, the interconnection electrode layer 7, the first insulating layer 6, the reflecting layer 5, the P-GaN layer 4 and the quantum well layer 3 and are respectively connected with the N-GaN layer 2;
the metal layer of the leading-out electrode layer is sequentially Cr/Al/Ti/Pt/Ni/Au/, wherein the thickness of Ni is not less than 300 nm;
the subsequent steps may further include:
and 9, cutting the wafer to separate to obtain a single LED chip.
Through the process steps of the embodiment, the high-power flip LED chip with the temperature monitoring function is obtained, and comprises a substrate layer 1, wherein an N-GaN layer 2, a quantum well layer 3 and a P-GaN layer 4 are sequentially grown on the substrate layer 1;
a reflecting layer 5 is arranged on the P-GaN layer 4; the quantum well layer 3, the P-GaN layer 4 and the reflecting layer 5 are coated by a first insulating layer 6;
an interconnection electrode layer 7 is arranged on the first insulating layer 6; the interconnection electrode layer 7 penetrates through the first insulating layer 6 and is respectively connected with the reflecting layer 5 and the N-GaN layer 2;
the interconnection electrode layer 7 is coated by a second insulating layer 8;
an extraction electrode layer is arranged on the second insulating layer 8; the extraction electrode layer comprises two pad electrodes 9 and 10 which penetrate through the second insulating layer 8 and are respectively connected with the interconnection electrode layer 7, and two thermal resistance monitoring electrodes 11 and 12 which penetrate through the second insulating layer 8, the interconnection electrode layer 7, the first insulating layer 6, the reflecting layer 5, the P-GaN layer 4, the quantum well layer 3 and the N-GaN layer 2 and are respectively connected;
and a temperature detecting joint is formed at the joint of the two thermal resistance monitoring electrodes 11 and 12 and the N-GaN layer.
More preferably, the thermal resistance monitor electrodes 11, 12 are connected to the N-GaN layer at positions in the central region of the N-GaN layer.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (10)
1. A high-power flip-chip LED chip with temperature monitoring comprises a substrate layer (1) and is characterized in that,
an N-GaN layer (2), a quantum well layer (3) and a P-GaN layer (4) are sequentially grown on the substrate layer (1);
a reflecting layer (5) is arranged on the P-GaN layer (4); the quantum well layer (3), the P-GaN layer (4) and the reflecting layer (5) are coated by a first insulating layer (6);
an interconnection electrode layer (7) is arranged on the first insulating layer (6); the interconnection electrode layer (7) penetrates through the first insulating layer (6) and is respectively connected with the reflecting layer (5) and the N-GaN layer (2);
the interconnection electrode layer (7) is coated by a second insulating layer (8);
an extraction electrode layer is arranged on the second insulating layer (8); the extraction electrode layer comprises two pad electrodes (9 and 10) which penetrate through the second insulating layer (8) and are respectively connected with the interconnection electrode layer (7), and two thermal resistance monitoring electrodes (11 and 12) which penetrate through the second insulating layer (8), the interconnection electrode layer (7), the first insulating layer (6), the reflecting layer (5), the P-GaN layer (4) and the quantum well layer (3) and are respectively connected with the N-GaN layer (2);
the two thermal resistance monitoring electrodes (11, 12) are connected with the N-GaN layer to form a temperature detecting node.
2. The high power flip LED chip with temperature monitoring of claim 1,
the thermal resistance monitoring electrode is connected with the N-GaN layer at the position of the central region of the N-GaN layer.
3. The high power flip LED chip with temperature monitoring of claim 1,
the metal layer of the interconnection electrode layer (7) is Cr/Al/Ti/Pt/Au/Pt in sequence, wherein the thickness of Au is not less than 1 μm.
4. The high power flip LED chip with temperature monitoring of claim 1,
the metal layer of the extraction electrode layer is Cr/Al/Ti/Pt/Ni/Au/, wherein the thickness of Ni is not less than 300 nm.
5. A method for preparing a high-power flip LED chip with temperature monitoring is characterized in that,
the method comprises the following steps that 1, an N-GaN layer (2), a quantum well layer (3) and a P-GaN layer (4) are sequentially grown on a substrate layer (1) by using MOCVD equipment to form a complete LED epitaxial structure;
step 2, making a mask pattern by using a positive photoresist mask method, wherein the blank area on the mask pattern corresponds to the channel of the N-GaN layer (2), and the N-GaN layer (2) corresponding to the blank area of the mask pattern is exposed;
step 3, manufacturing a reflection layer pattern by using a negative photoresist mask method, manufacturing a reflection layer (5) by using a magnetron sputtering process, wherein a channel for going to the N-GaN layer (2) is arranged on the reflection layer (5);
step 4, preparing a first insulating layer (6) on the surface of the wafer by utilizing a PECVD (plasma enhanced chemical vapor deposition) process, manufacturing a corrosion pattern by a positive photoresist mask method, and then carrying out through hole corrosion on the first insulating layer (6) to form a channel for going to the N-GaN layer (2) and a channel for going to the reflecting layer (5);
step 5, manufacturing an interconnection electrode pattern by using a negative photoresist masking method, and manufacturing an interconnection electrode layer (7) by using electron beam evaporation equipment, wherein the interconnection electrode layer (7) penetrates through the first insulating layer (6) and is respectively connected with the reflecting layer (5) and the N-GaN layer (2); a channel going to the N-GaN layer (2) is reserved on the interconnection electrode layer (7);
step 6, preparing a second insulating layer (8) on the surface of the wafer by utilizing the PECVD process again, manufacturing a corrosion pattern by a positive photoresist mask method, and then carrying out through hole corrosion on the second insulating layer (8) to form a channel for going to the N-GaN layer (2) and a channel for going to the interconnection electrode layer (7);
step 7, manufacturing an extraction electrode pattern by using a negative photoresist mask method again, and extracting an electrode layer by using electron beam evaporation equipment;
the extraction electrode layer comprises two pad electrodes (9, 10) and two thermal resistance monitoring electrodes (11, 12); wherein the two pad electrodes (9, 10) penetrate through the second insulating layer (8) and are respectively connected with the interconnection electrode layer (7); the two thermal resistance monitoring electrodes (11, 12) penetrate through the second insulating layer (8), the interconnection electrode layer (7), the first insulating layer (6), the reflecting layer (5), the P-GaN layer (4) and the quantum well layer (3) and are respectively connected with the N-GaN layer (2).
6. The method for manufacturing a high power flip LED chip with temperature monitoring as claimed in claim 5,
the metal of the reflecting layer is Ag/TiW.
7. The method for manufacturing a high power flip LED chip with temperature monitoring as claimed in claim 5,
the first insulating layer (6) is an SiO2/SiNx insulating layer.
8. The method for manufacturing a high power flip LED chip with temperature monitoring as claimed in claim 5,
the metal layer of the interconnection electrode layer (7) is Cr/Al/Ti/Pt/Au/Pt in sequence, wherein the thickness of Au is not less than 1 μm.
9. The method for manufacturing a high power flip LED chip with temperature monitoring as claimed in claim 5,
the second insulating layer (8) is an SiO2/SiNx insulating layer.
10. The method for manufacturing a high power flip LED chip with temperature monitoring as claimed in claim 5,
the metal layer of the extraction electrode layer is Cr/Al/Ti/Pt/Ni/Au/, wherein the thickness of Ni is not less than 300 nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111463336A (en) * | 2020-05-11 | 2020-07-28 | 福建省信达光电科技有限公司 | Preparation method of L ED lamp |
| CN111799354A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of MiniLED chip with high thrust value |
| CN111799353A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Method for preparing MiniLED chip |
| CN113670463A (en) * | 2021-08-03 | 2021-11-19 | 西华大学 | White light LED junction temperature and fluorescent glue temperature measuring device |
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2019
- 2019-12-29 CN CN201911385775.4A patent/CN110993760A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111463336A (en) * | 2020-05-11 | 2020-07-28 | 福建省信达光电科技有限公司 | Preparation method of L ED lamp |
| CN111463336B (en) * | 2020-05-11 | 2021-06-22 | 福建省信达光电科技有限公司 | Preparation method of LED lamp |
| CN111799354A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of MiniLED chip with high thrust value |
| CN111799353A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Method for preparing MiniLED chip |
| CN113670463A (en) * | 2021-08-03 | 2021-11-19 | 西华大学 | White light LED junction temperature and fluorescent glue temperature measuring device |
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