CN111463336A - Preparation method of L ED lamp - Google Patents
Preparation method of L ED lamp Download PDFInfo
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- CN111463336A CN111463336A CN202010389862.3A CN202010389862A CN111463336A CN 111463336 A CN111463336 A CN 111463336A CN 202010389862 A CN202010389862 A CN 202010389862A CN 111463336 A CN111463336 A CN 111463336A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000004020 conductor Substances 0.000 claims abstract description 52
- 239000011324 bead Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910001120 nichrome Inorganic materials 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 229910000570 Cupronickel Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical group [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims 2
- 229910003336 CuNi Inorganic materials 0.000 claims 1
- 229910005883 NiSi Inorganic materials 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 13
- 239000012790 adhesive layer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000009529 body temperature measurement Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- DBUTVDSHVUGWOZ-UHFFFAOYSA-N [Si].[Ni].[Cr].[Ni] Chemical compound [Si].[Ni].[Cr].[Ni] DBUTVDSHVUGWOZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The invention provides a preparation method of an L ED lamp, which comprises the following steps of A1, providing a L ED support, wherein the L ED support is provided with a first electrode for fixing a L ED chip, the first electrode is an electrode plate which is spliced by a first conductor and a second conductor in a side-by-side mode and can generate thermoelectromotive force in a closed loop, A2 is used for fixing a L ED chip on the first electrode of an L ED support, A3 is provided with a packaging substrate, a driving power supply and a temperature processor, the first electrode pad and the second electrode pad of the packaging substrate are respectively and electrically connected with the driving power supply, the third electrode pad and the fourth electrode pad of the packaging substrate are connected with the temperature processor, the P electrode of the L ED chip is electrically connected with the first electrode pad, the N electrode of the packaging substrate is electrically connected with the second electrode pad, the first pin part of the L ED lamp bead is electrically connected with the third electrode pad, and the second pin part is electrically connected with the fourth electrode pad.
Description
Technical Field
The invention relates to the field of L ED lighting, in particular to a preparation method of a L ED lamp.
Background
At present, L ED supports in the market are in many varieties and models, most supports are packaged by two metal electrodes, or three or more metal electrodes in a thermoelectric separation mode are adopted, when crystal fixing is carried out, a L ED chip is fixed on the corresponding metal support, and then a series of processes such as wire bonding, dispensing, baking, screening and packaging are carried out to obtain a finished product L ED lamp bead.
However, L ED beads are very sensitive to temperature, such as for chips of about 10mil by 30mil, the brightness of the whole lamp will decrease by 1% every 4.73 ℃ of the temperature of the lamp when the current is 100mA, and the sensitivity to temperature will further increase and the brightness will decrease with the increase of the current, so it is an extremely important issue for temperature tracking of L ED.
For the temperature detection of L ED lamps in the prior art, an external thermal sensor (such as a thermistor, a thermocouple and the like) is generally used to contact the surface of a L ED lamp bead or a packaging substrate to monitor the heat of a L ED chip, for example, a L ED lighting lamp with temperature feedback disclosed in the Chinese utility model application No. 202679739, however, since a L ED chip is a heat source, the heat emitted by an L ED chip serving as the heat source is transferred outwards, the farther the distance and the lower the temperature are, even if temperature compensation is made, the true temperature of the L ED chip cannot be accurately reflected, and after the temperature of the L ED chip is changed, the outside (the surface of the L ED lamp bead or the packaging substrate) often needs a certain time to be reflected, and the difference of the transfer time is large, so that timely monitoring cannot be realized.
Disclosure of Invention
Therefore, the invention provides a preparation method of an L ED lamp, the L ED lamp prepared by the preparation method can accurately monitor the heating temperature of a L ED chip, and the layout structure is simple.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a preparation method of an L ED lamp comprises the following steps:
a1, providing a L ED bracket, wherein the L ED bracket comprises an insulated bracket body, the surface of the bracket body is provided with a crystal fixing area, the crystal fixing area of the bracket body is provided with a first electrode for fixing a L ED chip, the first electrode is an electrode sheet which is spliced by a first conductor and a second conductor in a side-by-side mode and can generate thermoelectromotive force in a closed loop, the first conductor extends to the bottom surface or the side surface of the bracket body and is exposed to form a first lead part, and the second conductor extends to the bottom surface or the side surface of the bracket body and is exposed to form a second lead part;
a2, providing a L ED chip, and fixing a L ED chip on a first electrode of a L ED bracket to obtain a L ED lamp bead;
a3, providing a package substrate, wherein the package group comprises a first electrode pad, a second electrode pad, a third electrode pad and a fourth electrode pad which are arranged at intervals, the first electrode pad and the second electrode pad are respectively and electrically connected with a driving power supply, the third electrode pad and the fourth electrode pad are connected with a temperature processor, a P electrode of a L ED chip of a L ED lamp bead is electrically connected with the first electrode pad, an N electrode of the L ED lamp bead is electrically connected with the second electrode pad to form a power supply loop of the L ED chip, a first pin part of the L ED lamp bead is electrically connected with the third electrode pad, a second pin part of the L ED lamp bead is electrically connected with the fourth electrode pad, and therefore a first conductor and a second conductor of the first electrode are located in a closed loop.
Preferably, the first conductor is made of nichrome, and the second conductor is made of nickel-silicon alloy.
Preferably, the first conductor is made of nichrome, and the second conductor is made of cupronickel.
Preferably, the first conductor is made of copper, and the second conductor is made of a copper-nickel alloy.
Preferably, in step a1, the die attach region of the bracket body is further provided with a second electrode and a third electrode as a positive electrode and a negative electrode, the second electrode extends to the bottom surface or the side surface of the bracket body and is exposed to form a third lead portion, the third electrode extends to the bottom surface or the side surface of the bracket body and is exposed to form a fourth lead portion, in step a2, the P electrode of the L ED chip is electrically connected to the second electrode through a metal bonding wire, the N electrode of the L ED chip is electrically connected to the third electrode through another metal bonding wire, in step A3, the third lead portion of the L ED lamp bead is electrically connected to the first electrode pad, and the fourth lead portion is electrically connected to the second electrode pad, thereby forming a power supply loop of the L ED chip.
Preferably, in step a1, the die attach region of the bracket body is further provided with a second electrode, the first electrode is further used as a positive electrode for connecting with a driving power supply, the second electrode is used as a negative electrode with opposite polarity, the second electrode extends towards the bottom surface or the side surface of the bracket body and is exposed to form a third pin portion, in step a2, the P electrode of the L ED chip is electrically connected with the first electrode through a metal bonding wire, the N electrode of the L ED chip is electrically connected with the second electrode through another metal bonding wire, in step A3, the first pin portion or the second pin portion of the first electrode of the L ED lamp bead is electrically connected with the first electrode pad, and the third pin portion is electrically connected with the second electrode pad, thereby forming a power supply loop of the L ED chip.
Further preferably, a step a4 is further included, in which a controller is provided, an output terminal of the temperature processor is connected to an input terminal of the controller, and an output terminal of the controller is connected to an input terminal of the driving power supply.
Through the technical scheme provided by the invention, the method has the following beneficial effects:
according to the L ED lamp prepared by the method, the first electrode for directly fixing the L ED chip is arranged to be a hot electrode capable of generating thermoelectromotive force, so that the temperature of the L ED chip is directly received, the thermoelectromotive force is generated in a loop, the generated thermoelectromotive force is converted into temperature, the temperature of the L ED chip can be timely and accurately monitored, the subsequent control on the temperature of the L ED chip is facilitated, and the long service life of the L ED chip is ensured.
Simultaneously, the structure that realizes monitoring L ED chip temperature adopts the setting of integrating, simplifies the structure overall arrangement, does not influence the light path of L ED chip.
Drawings
Fig. 1 is a flow chart of a manufacturing method of an L ED lamp according to a first embodiment;
FIG. 2 is a schematic structural view of an L ED stent in the first embodiment;
FIG. 3 is a top view of the first electrode according to the first embodiment;
fig. 4 is a schematic structural diagram of an L ED lamp bead in the first embodiment;
fig. 5 is a schematic structural view of an L ED lamp according to the first embodiment after L ED beads are hidden;
fig. 6 is a schematic structural diagram of an L ED lamp according to a first embodiment.
FIG. 7 is a schematic structural view of an L ED stent in the second embodiment;
fig. 8 is a schematic structural view of an L ED lamp bead in the second embodiment;
fig. 9 is a schematic structural view of an L ED lamp according to the second embodiment after L ED beads are hidden;
fig. 10 is a schematic structural view of an L ED lamp in the second embodiment.
Detailed Description
To further illustrate the various embodiments, the invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. Those skilled in the art will appreciate still other possible embodiments and advantages of the present invention with reference to these figures. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.
The invention will now be further described with reference to the accompanying drawings and detailed description.
Example one
Referring to fig. 1, a method for manufacturing an L ED lamp includes the following steps:
a1, providing a L ED stent, and referring to fig. 2 and 3, the L ED stent includes an insulating stent body, the surface of the stent body has a die bonding region, the die bonding region of the stent body is provided with a first electrode for fixing a L ED chip, the first electrode is an electrode sheet spliced by a first conductor and a second conductor in a side-by-side manner and capable of generating thermoelectromotive force in a closed loop, the first conductor extends to and exposes the bottom surface (or the side surface in other embodiments) of the stent body to form a first lead part, and the second conductor extends to and exposes the bottom surface (or the side surface in other embodiments) of the stent body to form a second lead part.
Specifically, the die bonding region in this step is further provided with a second electrode, the first electrode 11 is used for fixing L ED chips and for connecting a driving power source (as a positive electrode connected to a positive electrode of the driving power source in this embodiment), and the second electrode 12 is used as a negative electrode connected to the driving power source and having a polarity opposite to that of the first electrode 11.
The second electrode 12 extends toward the bottom surface (or the side surface in other embodiments) of the holder body 101 and is exposed to form a third lead portion 121.
Specifically, the support body 101 is made of plastic, a reflection bowl 1011 is formed on the surface of the support body, the bottom surface of the reflection bowl 1011 is a solid crystal area, the structure of the reflection bowl 1011 is adopted to facilitate the subsequent packaging of packaging glue, and the wall of the reflection bowl 1011 can reflect light emitted by the L ED chip to improve the light output.
More specifically, the first conductor 111 is nichrome, and the second conductor 112 is nickel-silicon alloy. The first conductor 111 and the second conductor 112 are arranged side by side, i.e. in the same plane, and are fixedly connected by means of arc welding. Specifically, the arc welding mode is adopted, the technology is mature, the cost is low, and mass production can be realized. Of course, in other embodiments, other processes may be used to fixedly connect the first conductor 111 and the second conductor 112, as long as the thermoelectric force can be generated in the closed loop.
Step a2, referring to fig. 4, providing L ED chips, and fixing L ED chips on the first electrode of L ED scaffold to obtain L ED beads.
Specifically, the L ED chip 21 is fixed by the conventional die bonding method, i.e., fixed on the first electrode 11 by silver paste or solder paste, the L ED chip 21 fixed on the first electrode 11 has a P electrode electrically connected to the first electrode 11 through a metal bonding wire, and an N electrode electrically connected to the second electrode 12 through another metal bonding wire, so as to form an electrical connection with the first electrode 11 and the second electrode 12 of the L ED holder 10.
Still further, step a2 further includes filling a packaging adhesive layer 22, where the packaging adhesive layer 22 is filled in the reflective bowl 1011 and covers the L ED chip 21 and the metal bonding wires to realize solid sealing, so as to isolate and protect the L ED chip 21 and the metal bonding wires, and more specifically, the L ED chip 21 is a blue light L ED chip, and the packaging adhesive layer 22 is a fluorescent adhesive layer, thereby forming L ED beads emitting white light.
Step a3, with continued reference to fig. 5 and 6, providing a package substrate 31, a driving power supply 33, and a temperature processor 32, where at least one package group is disposed on the package substrate 31, as shown in fig. 5, a group of package groups is taken as an example in the illustration, and the package group includes a first electrode pad 311, a second electrode pad 312, a third electrode pad 313, and a fourth electrode pad 314 disposed at intervals, that is, the first electrode pad 311, the second electrode pad 312, the third electrode pad 313, and the fourth electrode pad 314 are insulated from each other. The first electrode pad 311 and the second electrode pad 312 are electrically connected to the driving power source 33, specifically, in this embodiment, the first electrode pad 311 is electrically connected to a positive electrode of the driving power source 33, and the second electrode pad 312 is electrically connected to a negative electrode of the driving power source 33. The third electrode pad 313 and the fourth electrode pad 314 are connected to the temperature processor 32, and specifically, the third electrode pad 313 and the fourth electrode pad 314 are respectively connected to the temperature processor 32 through a temperature signal line 352.
A P electrode of the L ED chip 21 of the L ED lamp bead 20 is electrically connected to the first electrode pad 311, and an N electrode thereof is electrically connected to the second electrode pad 312 to form a power supply loop of the L ED chip 21, specifically, the first pin portion 1111 (any one pin portion of the first electrode 11, or the second pin portion 1121 in other embodiments) of the first electrode 11 of the L ED lamp bead 20 is electrically connected to the first electrode pad 311, and the third pin portion 121 is electrically connected to the second electrode pad 312 to form a power supply loop of the L ED chip 21.
The L ED lamp bead 20 has a first lead 1111 of the first electrode 11 electrically connected to the third electrode pad 313, and a second lead 1121 electrically connected to the fourth electrode pad 314, so that the first conductor 111 and the second conductor 112 of the first electrode 11 are in a closed loop, the closed loop is a closed loop of a thermocouple, and the thermal electromotive force is generated in the loop as long as the temperatures of two junctions (one end is T, called as a working end or a hot end, and the other end is T0, called as a free end or a cold end) are different.
After the power supply is connected, the driving power supply 33 drives the L ED chip 21 of the L ED lamp bead 20 to emit light, and meanwhile, the L ED chip 21 also generates heat and emits the heat to the outside, wherein the heat conductivity of the bracket body 101 and the packaging adhesive layer 22 which are in direct contact with the L ED chip 21 is poor, most of the heat can be transferred to the first electrode 11 which is in direct contact with the L ED chip 21 at the first time, so that the temperature of the first electrode 11 can reflect the actual temperature of the L ED chip most, after the first electrode 11 is heated, a closed loop where the first conductor 111 and the second conductor 112 are located generates a thermal electromotive force, and the temperature processor 32 obtains the temperature value of the first electrode 11 according to the corresponding relationship between the generated thermal electromotive force and the temperature, the temperature measuring principle is the same as that of an existing thermocouple, and the temperature processor 32 can adopt a thermocouple thermometer in the prior art.
In this scheme, first electrode 11 that will be used for direct fixation L ED chip 21 sets to the hot electrode, and make return circuit (temperature measurement return circuit) produce the thermal electromotive force with the temperature of direct receipt L ED chip 21, convert the thermal electromotive force that produces into the temperature again, and then can be timely, accurate monitoring L ED chip 21's temperature, be convenient for follow-up management and control to L ED chip 21 temperature, thereby guarantee L ED chip 21's life is permanent, simultaneously, the structure that realizes monitoring L ED chip 21 temperature adopts the integrated setting, simplify the structural layout, do not influence L ED chip 21's light path.
In this embodiment, the first electrode 11 also serves as a positive electrode for connecting with the driving power supply 33, i.e. an improvement on the basis of the original L ED bracket with only two electrodes, and the power supply circuit and the temperature measurement circuit of the L ED chip 21 are independent and do not affect each other.
Specifically, in this embodiment, the material of the first conductor 111 is nichrome, and the second conductor 112 is nickel-silicon alloy. The resistance temperature coefficient of the nickel-chromium-nickel-silicon is small, the conductivity is high, the specific heat is small, the thermoelectric potential generated in temperature measurement is large, and the thermoelectric potential and the temperature are in a linear or nearly linear single-value function relationship, so that the requirement of the scheme can be well met. Meanwhile, the material has the characteristics of good material reproducibility, high mechanical strength, simple manufacturing process, low price and the like.
Specifically, in this embodiment, the first electrode pad 311 is electrically connected to the positive electrode of the driving power supply 33, the second electrode pad 312 is electrically connected to the negative electrode of the driving power supply 33, specifically, both the first electrode pad 311 and the second electrode pad 312 are electrically connected to the driving power supply 33 through the power line 351, of course, in other embodiments, the first electrode pad 311 may be electrically connected to the negative electrode of the driving power supply 33, and the second electrode pad 312 may be electrically connected to the positive electrode of the driving power supply 33, as long as the positive electrode of the L ED lamp bead 20 is connected to the pad serving as the positive electrode and the negative electrode of the L ED lamp bead 20 is connected to the pad serving as the negative electrode when the L ED lamp bead 20 is assembled.
Further, in this embodiment, the first electrode pad 311, the second electrode pad 312, the third electrode pad 313 and the fourth electrode pad 314 are all copper foil layers, and the copper foil layers have good electrical conductivity and low cost. Meanwhile, when other metal materials (such as aluminum of the third electrode pad 313 and the fourth electrode pad 314 and the temperature signal line 352 in this embodiment) are connected to the temperature measuring circuit, as long as the temperatures of the two junctions are the same, the generated thermal electromotive force will remain unchanged, i.e., will not be affected by the connection of other metals to the circuit, and therefore, the arrangement of the copper foil layers of the third electrode pad 313 and the fourth electrode pad 314 and the temperature signal line 352 will not affect the temperature testing accuracy. The electrode pads (third electrode pad 313 and fourth electrode pad 314) and the connected temperature signal line 352 are used as extension lines.
Still further, in this embodiment, a step a4 is further included, a controller 34 is provided, an output end of the temperature processor 32 is connected to an input end of the controller 34 to output temperature information to the controller 34, an output end of the controller 34 is connected to an input end of the driving power supply 33, the controller 34 controls an output current of the driving power supply 33 according to a real-time temperature of the L ED chip 21, and if the temperature exceeds a certain threshold value, the driving power supply 33 is controlled to reduce the output current to the L ED lamp bead 20, and the like.
Still further, in this embodiment, a plurality of groups of package groups are disposed on the package substrate 31, a plurality of L ED lamp beads 20 are also disposed on the plurality of groups of package groups, and the plurality of L ED lamp beads 20 are preferably disposed in series, and have the same current, so as to facilitate uniform control.
Example two
The preparation method of the L ED lamp provided by this embodiment is substantially the same as the preparation method of the first embodiment, except that:
in step a1, referring to fig. 7, the die bonding region of the holder body 101 is provided with a second electrode 12 and a third electrode 13 as positive and negative electrodes, the second electrode 12 extends and exposes toward the bottom surface (or the side surface in other embodiments) of the holder body 101 to form a third lead portion 121, the third electrode 13 extends and exposes toward the bottom surface (or the side surface in other embodiments) of the holder body 101 to form a fourth lead portion 131, and the first electrode 11 is only used as an electrode for fixing the L ED chip 21.
Meanwhile, the first conductor 111 of the first electrode 11 is nichrome, and the second conductor 112 is cupronickel. When the first conductor 111 and the second conductor 112 are brought into contact with each other, a thermoelectromotive force can be generated even in a closed circuit.
In step a2, with reference to fig. 8, the L ED chip 21 is fixed on the first electrode 11 by die bonding, the P electrode thereof is electrically connected to the second electrode 12 through a metal bonding wire, and the N electrode thereof is electrically connected to the third electrode 13 through another metal bonding wire.
In step a3, as shown in fig. 9 and 10, the third lead portion 121 of the L ED lamp bead 20 is electrically connected to the first electrode pad 311, the fourth lead portion 131 is electrically connected to the second electrode pad 312, so as to form a power supply loop of the L ED chip 21, the first lead portion 1111 of the L ED lamp bead 20 is electrically connected to the third electrode pad 313, the second lead portion 1121 is electrically connected to the fourth electrode pad 314, so that the first conductor 111 and the second conductor 121 of the first electrode 11 are in a closed loop, and thus, the power supply loop and the temperature measurement loop of the L ED chip 21 are physically completely isolated.
The L ED lamp prepared by the preparation method of the L ED lamp provided by the embodiment can also achieve the same technical effect as the embodiment one.
Of course, in other embodiments, the materials of the first conductor 111 and the second conductor 112 of the first electrode 11 are not limited to the above, and the material of the first conductor 111 may be copper, and the second conductor 112 may be a copper-nickel alloy or the like, as long as the thermoelectromotive force can be generated in the closed circuit.
The L ED frame 10 is not limited in the number of electrodes, and the frame body 101 may also be provided with a plurality of electrode sets (each electrode set includes the first electrode 11 and the second electrode 12 in the first embodiment, or includes the first electrode 11, the second electrode 12, and the third electrode 13 in the second embodiment, etc.), or the frame body 10 is directly provided with a first electrode 11 capable of generating thermal electromotive force, and in the subsequent package, the P electrode of the L ED chip 21 is electrically connected to the first electrode pad 311 as the positive electrode on the package substrate 31 through a metal bonding wire, and the N electrode thereof is electrically connected to the second electrode pad 312 as the negative electrode on the package substrate 31 through a metal bonding wire.
While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (7)
1. A preparation method of an L ED lamp is characterized by comprising the following steps:
a1, providing a L ED bracket, wherein the L ED bracket comprises an insulated bracket body, the surface of the bracket body is provided with a crystal fixing area, the crystal fixing area of the bracket body is provided with a first electrode for fixing a L ED chip, the first electrode is an electrode sheet which is spliced by a first conductor and a second conductor in a side-by-side mode and can generate thermoelectromotive force in a closed loop, the first conductor extends to the bottom surface or the side surface of the bracket body and is exposed to form a first lead part, and the second conductor extends to the bottom surface or the side surface of the bracket body and is exposed to form a second lead part;
a2, providing a L ED chip, and fixing a L ED chip on a first electrode of a L ED bracket to obtain a L ED lamp bead;
a3 provides a package substrate, a driving power supply and a temperature processor, the package group comprises a first electrode pad, a second electrode pad, a third electrode pad and a fourth electrode pad which are arranged at intervals, the first electrode pad and the second electrode pad are respectively and electrically connected with the driving power supply, the third electrode pad and the fourth electrode pad are connected with the temperature processor, a P electrode of a L ED chip of a L ED lamp bead is electrically connected with the first electrode pad, an N electrode of the L ED lamp bead is electrically connected with the second electrode pad to form a power supply loop of the L ED chip, a first pin part of the L ED lamp bead is electrically connected with the third electrode pad, a second pin part of the L ED lamp bead is electrically connected with the fourth electrode pad, and therefore a first conductor and a second conductor of the first electrode are in a closed loop.
2. The L ED lamp manufacturing method of claim 1, wherein the first conductor is made of NiCr alloy, and the second conductor is made of NiSi alloy.
3. The L ED lamp manufacturing method of claim 1, wherein the first conductor is made of NiCr alloy, and the second conductor is made of CuNi alloy.
4. The method of claim 1, wherein the first conductor is copper and the second conductor is a copper-nickel alloy.
5. The L ED lamp manufacturing method according to claim 1, wherein in step A1, the die attach region of the frame body is further provided with a second electrode and a third electrode as a positive electrode and a negative electrode, the second electrode extends to the bottom surface or the side surface of the frame body and is exposed to form a third lead portion, the third electrode extends to the bottom surface or the side surface of the frame body and is exposed to form a fourth lead portion, in step A2, the P electrode of the L ED chip is electrically connected to the second electrode through a metal bonding wire, the N electrode of the L ED chip is electrically connected to the third electrode through another metal bonding wire, in step A3, the third lead portion of the L ED lamp bead is electrically connected to the first electrode pad, and the fourth lead portion is electrically connected to the second electrode pad, thereby forming a power supply loop of the L ED chip.
6. The L ED lamp manufacturing method of claim 1, wherein in step A1, the die attach region of the holder body is further provided with a second electrode, the first electrode is further used as a positive electrode for connecting with a driving power supply, the second electrode is used as a negative electrode with opposite polarity, the second electrode extends to the bottom surface or the side surface of the holder body and is exposed to form a third lead portion, in step A2, the P electrode of the L ED chip is electrically connected with the first electrode through a metal bonding wire, the N electrode of the L ED chip is electrically connected with the second electrode through another metal bonding wire, in step A3, the first lead portion or the second lead portion of the first electrode of the L ED lamp bead is electrically connected with the first electrode pad, and the third lead portion is electrically connected with the second electrode pad, thereby forming a power supply loop of the L ED chip.
7. The method for manufacturing L ED light fixture as claimed in claim 1, further comprising step A4, wherein a controller is provided, an output of the temperature processor is connected to an input of the controller, and an output of the controller is connected to an input of the driving power supply.
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Cited By (1)
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| CN112993141A (en) * | 2021-02-04 | 2021-06-18 | 深圳市聚飞光电股份有限公司 | LED bracket component, light-emitting device and light-emitting device |
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