CN104882365A - Silicon carbide surface processing method - Google Patents
Silicon carbide surface processing method Download PDFInfo
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- CN104882365A CN104882365A CN201410072719.6A CN201410072719A CN104882365A CN 104882365 A CN104882365 A CN 104882365A CN 201410072719 A CN201410072719 A CN 201410072719A CN 104882365 A CN104882365 A CN 104882365A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 137
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 126
- 238000003672 processing method Methods 0.000 title abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 48
- 238000004381 surface treatment Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 11
- 229910002804 graphite Inorganic materials 0.000 description 11
- 239000010439 graphite Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 8
- 238000004506 ultrasonic cleaning Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000010792 warming Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention provides a silicon carbide surface processing method, comprising: placing silicon carbide powder and a silicon carbide crystal with surfaces to be processed in a vacuum cavity; and heating the silicon carbide powder to a first temperature in order to decompose the powder so as to form Si atmosphere, at least locating the surfaces to be processed of the silicon carbide crystal in the Si atmosphere, and heating the silicon carbide crystal to a second temperature so that the surfaces to be processed of the silicon carbide crystal and the Si atmosphere generate etching reaction.
Description
Technical field
The present invention relates to a kind of silicon carbide processing method, particularly relate to a kind of method for etching silicon carbide wafer surface.
Background technology
Carborundum is one of wide bandgap semiconductor materials being subject to extensive concern, there is density low, energy gap is large, puncture voltage is high, Heat stability is good, frequency response characteristic is excellent, good chemical stability, is the desirable backing material making high frequency, high pressure, high-power component and blue light-emitting diode.In recent years, along with the rise of Graphene research, utilize silicon carbide epitaxy Graphene to become and be hopeful one of method realizing graphene electronic device application most.
Silicon carbide wafer as homogeneity or heteroepitaxy substrate adopts Mechanical Method to cut crystal usually, and forms through machinery and chemical polishing, and as shown in Figure 1, the surface of silicon carbide wafer is damaged usually, spreads all over the cut caused by mechanical polishing.And the epitaxial material with premium properties to be prepared on the surface at silicon carbide wafer, then need etching silicon carbide wafer surface, to remove these cuts on surface, make surface have the orderly surface topography of atom level, this is conducive to the growth of high-quality epitaxial material.But due to physics, the chemical stability of carborundum excellence, it only has and could effectively be etched under the high temperature conditions, and the wafer engraving technology therefore accumulated in silicon materials is difficult to be applied to carborundum.
Conventional silicon carbide wafer lithographic technique comprises: 1. wet etching, is being less than carborundum eroding (J.Vac.Sci.Technol.A4,590 (1986)) in the molten caustic soda of 1000 DEG C or salt; 2. dry etching, uses hydrogen, at higher than 1000 DEG C, etches (Surf.Sci.602,2936 (2008), Phys.Rev.Lett.76,3412 (2000)) containing halogen family elemental gas or mist; Or use silane etc. to contain the atmosphere of Si in 1600 ~ 2200 DEG C of etching silicon carbide (Mater.Sci.Forum717-720,573 (2012), J.Cryst.Growth380,61 (2013)).
Wherein to have removal efficiency high, simple to operate for wet etching, the advantage that cost is low, but poor controllability, can produce etch pit and be difficult to the impurity removed on surface.And although general dry etching controllability is good, substrate surface cleans, use cost is high, gas attack is strong, high to equipment requirement.Above-mentioned two kinds of technology are to the etching of C face carborundum simultaneously, and in large scale scope, effect is not fully up to expectations.
Summary of the invention
Therefore, the object of the invention is to the defect overcoming above-mentioned prior art, a kind of surface treatment method for carborundum is provided.
The invention provides a kind of surface treatment method for carborundum, comprising:
1) by silicon carbide powder and have pending surface carborundum crystals place in the vacuum chamber;
2) described silicon carbide powder is made to be heated to the first temperature to make it decompose thus to form rich Si atmosphere, the described pending surface of described carborundum crystals is at least made to be arranged in described rich Si atmosphere, and make described carborundum crystals be heated to the second temperature, to make the described pending surface of described carborundum crystals and described rich Si atmosphere generation etching reaction.
According to method provided by the invention, wherein said first temperature is between 1000 DEG C and 2000 DEG C, and described second temperature is between 1000 DEG C and 2000 DEG C.
According to method provided by the invention, wherein said first temperature is more than or equal to described second temperature, and the difference between described first temperature and described second temperature is less than 500 DEG C.
According to method provided by the invention, when wherein there is etching reaction, the air pressure in described vacuum chamber is less than 10
4pa.
According to method provided by the invention, when wherein there is etching reaction, the air pressure of described vacuum chamber is 10
-4between Pa to 10Pa.
According to method provided by the invention, the average grain diameter of wherein said silicon carbide powder is less than 1 millimeter.
According to method provided by the invention, wherein completed by primary heater the heating of described silicon carbide powder, completed the heating of described carborundum crystals by secondary heater, the temperature of first, second heater described can control independently of each other.
According to method provided by the invention, wherein to the heating of described silicon carbide powder with completed by same heater the heating of described carborundum crystals, described silicon carbide powder and described carborundum crystals are placed in the identical or different warm area of two temperature of described heater.
Method provided by the invention to the silicon carbide wafer of arbitrary orientation all can etch large area, close to perfectly, arrange orderly step appearance, and simple, cost is low, controllability good, can not introduce the pollution of exogenous impurity.
Accompanying drawing explanation
Referring to accompanying drawing, embodiments of the present invention is further illustrated, wherein:
Fig. 1 shows the mechanical mark on silicon carbide wafer surface;
Fig. 2 shows the process schematic of the method provided according to embodiments of the invention 1;
Fig. 3 shows the AFM X rays topographs of the wafer surface handled by method provided according to embodiments of the invention 1;
Fig. 4 shows the AFM X rays topographs of the wafer surface handled by method provided according to embodiments of the invention 2;
Fig. 5 shows the process schematic of the method provided according to embodiments of the invention 3;
Fig. 6 shows the AFM X rays topographs of the wafer surface handled by method provided according to embodiments of the invention 3;
Fig. 7 shows the process schematic of the method provided according to embodiments of the invention 4;
Fig. 8 shows the AFM X rays topographs of the wafer surface handled by method provided according to embodiments of the invention 4.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with specific embodiment, the present invention is described in more detail.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Embodiment 1
The present embodiment provides a kind of silicon carbide processing method, is described in detail the method referring to Fig. 2.The silicon carbide processing method that the present embodiment provides comprises the following steps:
1) 6H-SiC (000-1) silicon carbide wafer 1 of 2 × 2 square centimeters is provided, under normal temperature, normal pressure, adopt acetone, this silicon carbide wafer 1 of absolute ethyl alcohol ultrasonic cleaning successively, and clean by washed with de-ionized water, to remove the organic substance on silicon carbide wafer 1 surface.Then the further ultrasonic cleaning of watery hydrochloric acid, diluted hydrofluoric acid is used, and clean by washed with de-ionized water, to remove metal impurities and the silicon dioxide oxide layer on silicon carbide wafer 1 surface.Finally the silicon carbide wafer 1 after cleaning is dried up with nitrogen.
2) be that the silicon carbide powder 2 of 5 microns evenly loads in TaC crucible 3 by average grain diameter, guarantee that the filling thickness of silicon carbide powder 2 in TaC crucible 3 is more than 1 millimeter, then TaC crucible 3 is put into graphite crucible 4.
3) silicon carbide wafer 1 is placed in above silicon carbide powder 2, and by surface to be etched upward, avoids contacting with silicon carbide powder 2.
4) graphite crucible 4 is put into the heating in vacuum chamber 5 with heater, with high-purity argon gas by this heating in vacuum chamber 5 gas washing 2 times, then vacuumize and make air pressure reach 10
-2pa, utilizes heater that graphite crucible 4 is warming up to 1400 DEG C simultaneously, and this temperature 30 minutes, Temperature fall was to room temperature afterwards, obtains etched silicon carbide wafer.
Because dusty material is easier to decompose than block materials, therefore silicon carbide powder is easier to decompose than silicon carbide wafer.After silicon carbide powder decomposes, (this is because the saturated vapor pressure ratio of Si/C atom is very big, is about 10 to produce the atmosphere of a large amount of rich Si
6).This rich Si atmosphere destroys the equilibrium gas atmosphere on silicon carbide wafer surface, and the C atom on the atmosphere of rich Si and silicon carbide wafer surface and Si atom are reacted, and forms SiC
2or, Si
2the gaseous moleculars such as C, thus reach the function that silicon carbide wafer surface is etched.Because wafer surface blemish place has higher surface energy, therefore above-mentioned corrasion is preferentially carried out at the fault location of wafer surface, and progressively etching forms complete table top and step appearance.The height of its step is about half or a structure cell height (final mesa width is determined by the drift angle that wafer is intrinsic).
The AFM X rays topographs of the C face 6H-SiC wafer surface that the method that the present embodiment provides obtains as shown in Figure 3.Because the cutting angle of the commercial silicon carbide wafer buied inevitably exists certain error, the C face of the surperficial also non-critical of silicon carbide wafer, the wafer surface therefore after etching can form step appearance.In the present embodiment, the mesa width of this wafer surface is about 300 nanometers, and shoulder height is about 1.5 nanometers.As can be seen from the figure, the silicon carbide that the silicon carbide processing method that the present embodiment provides obtains have on a large scale smooth, arrange orderly step appearance, step is continuous and straight, and effectively removes the damage on silicon carbide wafer surface.In addition, the method that the present embodiment provides uses the silicon carbide powder of identical chemical composition, can not introduce the pollution of exogenous impurity.
Embodiment 2
The present embodiment provides a kind of silicon carbide processing method, comprises the following steps:
1) 4H-SiC (000-1) silicon carbide wafer 1 of 3 × 3 square centimeters is provided, under normal temperature, normal pressure, adopt acetone, this silicon carbide wafer 1 of absolute ethyl alcohol ultrasonic cleaning successively, and clean by washed with de-ionized water, to remove the organic substance on silicon carbide wafer 1 surface.Then the further ultrasonic cleaning of watery hydrochloric acid, diluted hydrofluoric acid is used, and clean by washed with de-ionized water, to remove metal impurities and the silicon dioxide oxide layer on silicon carbide wafer 1 surface.Finally the silicon carbide wafer 1 after cleaning is dried up with nitrogen.
2) be that the silicon carbide powder 2 of 10 microns evenly loads in WC crucible 3 by average grain diameter, guarantee that the filling thickness of silicon carbide powder 2 in WC crucible 3 is more than 1 millimeter, then WC crucible 3 is put into graphite crucible 4.
3) silicon carbide wafer 1 is placed in above silicon carbide powder 2, and by surface to be etched upward.
4) graphite crucible 4 is put into the heating in vacuum chamber 5 with heater, with high-purity argon gas by this heating in vacuum chamber 5 gas washing 2 times, then vacuumize and make air pressure reach 10
-3pa, utilizes heater that graphite crucible 4 is warming up to 1450 DEG C simultaneously, and this temperature 25 minutes, Temperature fall was to room temperature afterwards, obtains etched silicon carbide wafer.
As shown in Figure 4, its mesa width is about 200 nanometers to the AFM X rays topographs of the C face 4H-SiC wafer surface that the method that the present embodiment provides obtains, and shoulder height is about 1 nanometer.As can be seen from the figure, the silicon carbide that the silicon carbide processing method that the present embodiment provides obtains have on a large scale smooth, arrange orderly step appearance, step is continuous and straight, and effectively removes the damage on silicon carbide wafer surface.In addition, the method that the present embodiment provides uses the silicon carbide powder of identical chemical composition, can not introduce the pollution of exogenous impurity.
Embodiment 3
The present embodiment provides a kind of silicon carbide processing method, is described in detail the method referring to Fig. 5.The silicon carbide processing method that the present embodiment provides comprises the following steps:
1) 6H-SiC (0001) silicon carbide wafer 21 of 2 inches is provided, under normal temperature, normal pressure, adopt acetone, this silicon carbide wafer 21 of absolute ethyl alcohol ultrasonic cleaning successively, and clean by washed with de-ionized water, to remove the organic substance on silicon carbide wafer 21 surface.Then the further ultrasonic cleaning of watery hydrochloric acid, diluted hydrofluoric acid is used, and clean by washed with de-ionized water, to remove metal impurities and the silicon dioxide oxide layer on silicon carbide wafer 21 surface.Finally the silicon carbide wafer 21 after cleaning is dried up with nitrogen.
2) be that the silicon carbide powder 22 of 20 microns evenly loads in graphite crucible 24 by average grain diameter, guarantee that the filling thickness of silicon carbide powder 22 in graphite crucible 24 is more than 1 millimeter.
3) silicon carbide wafer 21 supported with graphite frame and be placed in three centimeters above silicon carbide powder 22, and by surface to be etched down.
4) graphite crucible 24 is put into the heating in vacuum chamber 25 with heater, with high-purity argon gas by this heating in vacuum chamber 25 gas washing 2 times, then vacuumize and make air pressure reach 5 × 10
-3pa, utilizes heater that graphite crucible 24 is warming up to 1300 DEG C simultaneously, and this temperature 40 minutes, Temperature fall was to room temperature afterwards, obtains etched silicon carbide wafer.
As shown in Figure 6, its mesa width is about 200 nanometers to the AFM X rays topographs of the Si face 6H-SiC wafer surface that the method that the present embodiment provides obtains, and shoulder height is about 1.5 nanometers.As can be seen from the figure, the silicon carbide that the silicon carbide processing method that the present embodiment provides obtains have on a large scale smooth, arrange orderly step appearance, step is continuous and straight, and effectively removes the damage on silicon carbide wafer surface.In addition, the method that the present embodiment provides uses the silicon carbide powder of identical chemical composition, can not introduce the pollution of exogenous impurity.
Embodiment 4
The present embodiment provides a kind of silicon carbide processing method, is described in detail the method referring to Fig. 7.The silicon carbide processing method that the present embodiment provides comprises the following steps:
1) 6H-SiC (0001) silicon carbide wafer 31 of 2 inches is provided, under normal temperature, normal pressure, adopt acetone, this silicon carbide wafer 31 of absolute ethyl alcohol ultrasonic cleaning successively, and clean by washed with de-ionized water, to remove the organic substance on silicon carbide wafer 31 surface.Then the further ultrasonic cleaning of watery hydrochloric acid, diluted hydrofluoric acid is used, and clean by washed with de-ionized water, to remove metal impurities and the silicon dioxide oxide layer on silicon carbide wafer 31 surface.Finally the silicon carbide wafer 31 after cleaning is dried up with nitrogen.
2) be that the silicon carbide powder 32 of 100 ran evenly loads in TaC crucible 33 by average grain diameter, guarantee that the filling thickness of silicon carbide powder 32 in TaC crucible 33 is more than 1 millimeter.
3) TaC crucible 33 is put into heating in vacuum chamber 35, wherein this heating in vacuum chamber 35 have can independent temperature control, primary heater 361 and secondary heater 362.TaC crucible 33 is placed in the heating region of primary heater 361, Si face 6H-SiC (0001) silicon carbide wafer 31 is positioned on the heating region of secondary heater 362.
4) with high-purity argon gas by this heating in vacuum chamber 35 gas washing 2 times, then vacuumize and make air pressure reach 0.1Pa, primary heater 361 is warming up to 1500 DEG C simultaneously, secondary heater 362 is warming up to 1300 DEG C, this temperature 45 minutes, Temperature fall is to room temperature afterwards, obtains etched silicon carbide wafer.
As shown in Figure 8, its mesa width is about 200 nanometers to the AFM X rays topographs of the Si face 6H-SiC wafer surface that the method that the present embodiment provides obtains, and shoulder height is about 1.5 nanometers.As can be seen from the figure, the silicon carbide that the silicon carbide processing method that the present embodiment provides obtains have on a large scale smooth, arrange orderly step appearance, step is continuous and straight, and effectively removes the damage on silicon carbide wafer surface.In addition, due to the heating-up temperature of silicon carbide powder higher than the heating-up temperature to silicon carbide wafer, make silicon carbide powder be easier to decompose.
In the method that the present embodiment provides, have employed two heaters that can independently control to heat silicon carbide powder and silicon carbide wafer respectively, therefore can regulate and control the heating-up temperature of silicon carbide wafer and silicon carbide powder respectively neatly, thus silicon carbide powder can be made to be heated to be suitable for producing the temperature of rich Si atmosphere, and make silicon carbide wafer be heated to temperature that is suitable and rich Si atmosphere generation etching reaction, thus improve speed and the effect of wafer surface process.
According to other embodiments of the invention, the temperature of the primary heater 361 of silicon carbide powder heating is preferably greater than or equal to the temperature of the secondary heater 362 to silicon carbide wafer heating, both temperature differences are preferably less than 500 DEG C.
According to other embodiments of the invention, other mode formation temperature between silicon carbide powder and silicon carbide wafer can also be utilized poor.Such as by making silicon carbide powder and silicon carbide wafer lay respectively in two different warm areas of the temperature of heater.
According to other embodiments of the invention, wherein when etching silicon carbide wafer, the operating air pressure of the vacuum chamber at its place is less than 10
4pa, is preferably 10
-4pa-10Pa.During etching, 1000-2000 DEG C is preferably to the heating-up temperature of silicon carbide powder, is more preferably 1300-1500 DEG C.1000-2000 DEG C is preferably to the heating-up temperature of silicon carbide wafer, is more preferably 1300-1500 DEG C.Heating-up temperature to silicon carbide powder is preferably 0-500 DEG C with the difference of the heating-up temperature to silicon carbide wafer.Etch period is preferably 10-360 minute, and the preferred time is 20-45 minute.
According to other embodiments of the invention, wherein the crystal formation of silicon carbide powder is not particularly limited, and can adopt business single-crystal silicon carbide powder etc.The average grain diameter of silicon carbide powder is preferably less than 1 millimeter, is more preferably less than 50 microns.
According to other embodiments of the invention, wherein during etching, silicon carbide powder also can be placed in other high-temperature resistant container, or in the high-temperature crucible of other material, such as Ta, W etc.
Method provided by the invention is applicable to the surface etch of the silicon carbide wafer in any crystal orientation, such as C face carborundum (SiC(000-1)) wafer, Si face carborundum (SiC(0001)) wafer etc.In addition, method provided by the invention can also etch the surface of the carborundum bulk of other type.
In method provided by the invention, silicon carbide powder consumes few in etching reaction, and remaining silicon carbide powder can also be reused, and therefore etches with low cost.
Method provided by the invention to the silicon carbide wafer of arbitrary orientation all can etch large area, close to perfectly, arrange orderly step appearance, and simple, cost is low, controllability good, can not introduce the pollution of exogenous impurity.
For silicon carbide wafer, silicon carbide processing method according to the present invention is illustrated in above-described embodiment, it will be understood by those skilled in the art that, method provided by the invention not only may be used for silicon carbide wafer, also may be used for carrying out surface treatment to the carborundum crystals of other type, such as carborundum block etc.
Above with reference to specific embodiment, technical scheme of the present invention is described, it will be understood by those skilled in the art that, various parameters in above-described embodiment are only exemplary, but not determinate, those skilled in the art can make various distortion according to technical scheme provided by the invention.
It should be noted last that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted.Although with reference to embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, modify to technical scheme of the present invention or equivalent replacement, do not depart from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (8)
1., for a surface treatment method for carborundum, comprising:
1) by silicon carbide powder and have pending surface carborundum crystals place in the vacuum chamber;
2) described silicon carbide powder is made to be heated to the first temperature to make it decompose thus to form rich Si atmosphere, the described pending surface of described carborundum crystals is at least made to be arranged in described rich Si atmosphere, and make described carborundum crystals be heated to the second temperature, to make the described pending surface of described carborundum crystals and described rich Si atmosphere generation etching reaction.
2. method according to claim 1, wherein said first temperature is between 1000 DEG C and 2000 DEG C, and described second temperature is between 1000 DEG C and 2000 DEG C.
3. method according to claim 1, wherein said first temperature is more than or equal to described second temperature, and the difference between described first temperature and described second temperature is less than 500 DEG C.
4. method according to claim 1, when wherein there is etching reaction, the air pressure in described vacuum chamber is less than 10
4pa.
5. method according to claim 4, when wherein there is etching reaction, the air pressure of described vacuum chamber is 10
-4between Pa to 10Pa.
6. method according to claim 1, the average grain diameter of wherein said silicon carbide powder is less than 1 millimeter.
7. method according to claim 1, is wherein completed by primary heater the heating of described silicon carbide powder, is completed by secondary heater the heating of described carborundum crystals, and the temperature of first, second heater described can control independently of each other.
8. method according to claim 1, wherein to the heating of described silicon carbide powder with completed by same heater the heating of described carborundum crystals, described silicon carbide powder and described carborundum crystals are placed in the identical or different warm area of two temperature of described heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410072719.6A CN104882365B (en) | 2014-02-28 | 2014-02-28 | A kind of silicon carbide processing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410072719.6A CN104882365B (en) | 2014-02-28 | 2014-02-28 | A kind of silicon carbide processing method |
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| Publication Number | Publication Date |
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| CN104882365A true CN104882365A (en) | 2015-09-02 |
| CN104882365B CN104882365B (en) | 2017-11-14 |
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| CN113463191A (en) * | 2021-07-23 | 2021-10-01 | 上海天岳半导体材料有限公司 | Wafer with few surface particles and processing method thereof |
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| CN104882365B (en) | 2017-11-14 |
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Effective date of registration: 20191227 Address after: Room 301, Building 9, Tianrong Street, Daxing Biomedical Industry Base, Zhongguancun Science and Technology Park, Daxing District, Beijing 102600 Patentee after: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Address before: 100190 No. 8, South Third Street, Haidian District, Beijing, Zhongguancun Patentee before: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES |
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Application publication date: 20150902 Assignee: Shenzhen Reinvested Tianke Semiconductor Co.,Ltd. Assignor: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Contract record no.: X2023990000682 Denomination of invention: A Surface Treatment Method for Silicon Carbide Granted publication date: 20171114 License type: Common License Record date: 20230725 |