CN106783540B - The method for reducing epitaxial wafer surface scratch - Google Patents
The method for reducing epitaxial wafer surface scratch Download PDFInfo
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- CN106783540B CN106783540B CN201611159109.5A CN201611159109A CN106783540B CN 106783540 B CN106783540 B CN 106783540B CN 201611159109 A CN201611159109 A CN 201611159109A CN 106783540 B CN106783540 B CN 106783540B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
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Abstract
The invention discloses a kind of methods for reducing epitaxial wafer surface scratch, comprising the following steps: (1) silicon carbide substrates is placed on the indoor graphite base of silicon carbide epitaxy system response；(2) reaction indoor gas is repeatedly replaced using argon gas, is then passed through hydrogen to reaction chamber, be gradually increased hydrogen flowing quantity to 20~40L/min, the pressure that reaction chamber is arranged is 700~1000mbar, and reaction chamber is gradually heated to 1400~1500 DEG C；(3) after reaching set temperature, all parameter constants are kept, 10~60 minutes hydrogen etching processings in situ are carried out to silicon carbide substrates.Method of the invention utilizes under lower temperature, high chamber pressure and small flow hydrogen atmosphere, using at a slow speed and tend to isotropic hydrogen etching substrate is handled, it can effectively reduce and weaken the scratch of substrate surface, and reduce other epitaxy defects as derived from scratch in epitaxial layer, the compatible existing epitaxy technique of this method, does not need to modify to core process parameter.
Description
Technical field
The present invention relates to a kind of growing method of epitaxial wafer more particularly to a kind of methods for reducing epitaxial wafer surface scratch.
Background technique
SiC be it is a kind of suitable for high temperature, high-power, high-frequency electron device development wide bandgap semiconductor materials, and it is raw
The high-quality substrate of growth of III-V I compound semiconductor.Current commercialized SiC substrate full-size has had reached 6 inches,
But since SiC material high mechanical strength itself, chemical stability are good, it is caused to be difficult to carry out as silicon materials mechanical or change
Optical polishing.The diamond abrasive processing of standard will cause invisible mechanical damage, and the study of surfaces of SiC substrate finds quotient
Industry SiC substrate surface is frequently present of many thin scratches, while there are the damaging layers of 10 rans below substrate.
Chemically mechanical polishing (CMP) technique is the method for optimal removal SiC substrate surface scratch and subdamage layer at present,
Many SiC substrate supplies commercial city, which has, develops its unique CMP process, but the CMP process of most of SiC substrate supplier is not
The Micro scratching on SiC substrate surface can be completely removed.In epitaxial process, these Micro scratchings can be amplified, and part scratch can also derive
New epitaxy defect out.Therefore SiC substrate is effectively handled, the scratch for reducing and weakening substrate surface is outer to improving
Prolong quality to have very important significance.
In conventional SiC epitaxy technique, substrate is usually warming up under conditions of low reaction chamber pressure, big flow hydrogen
Epitaxial growth temperature, and keep being passed through hydrogen progress etching processing in situ under growth temperature.Actually quarter of the hydrogen to substrate
It loses rate and hydrogen flowing quantity and temperature is proportional, inversely with chamber pressure.In high temperature, low reaction chamber pressure
Under big flow hydrogen atmosphere, hydrogen is fast to the etch rate of substrate, and tends to anisotropic etching, the hydrogen etching of fault location
Rate can increase, and be easy the scratch of amplification substrate surface.On the contrary, in lower temperature, high chamber pressure and small flow hydrogen item
Under part, hydrogen is slow to the etch rate of substrate, tends to isotropic, can effectively reduce and weaken the scratch of substrate surface.
Summary of the invention
Goal of the invention: in view of the above problems, the present invention proposes a kind of method for reducing epitaxial wafer surface scratch.
Technical solution: to achieve the purpose of the present invention, the technical scheme adopted by the invention is that: a kind of reduction epitaxial wafer table
The method of face scratch, comprising the following steps:
(1) silicon carbide substrates are placed on the indoor graphite base of silicon carbide epitaxy system response；
(2) reaction indoor gas is repeatedly replaced using argon gas, is then passed through hydrogen to reaction chamber, is gradually increased hydrogen
For throughput to 20~40L/min, the pressure that reaction chamber is arranged is 700~1000mbar, and reaction chamber is gradually heated to 1400
~1500 DEG C；
(3) after reaching set temperature, all parameter constants are kept, 10~60 minutes hydrogen in situ is carried out to silicon carbide substrates
Etching processing；
(4) after the completion of hydrogen etching processing in situ, it is gradually increased hydrogen flowing quantity in 5 minutes to 60~120L/min, and
Chamber pressure is reduced to 80~200mbar, and reaction chamber temperature is risen to 1550~1650 DEG C of growth temperature；
(5) after reaching growth temperature, it is passed through the silicon source and carbon source of small flow to reaction chamber, controls the flow of silicon source and hydrogen
Than less than 0.03%, and it is passed through doped source, grown with a thickness of 0.5-2 μm, doping concentration~1E18cm-3Highly doped buffer layer；
(6) using it is linear it is gradual by the way of the flow in growth source and doped source changed to needed for growth epitaxial structure set
Definite value grows epitaxial structure according to common process program；
(7) after the completion of epitaxial structures growth, growth source and doped source is closed, is down to reaction chamber temperature in atmosphere of hydrogen
Then room temperature hydrogen is discharged, and be passed through argon gas and repeatedly replaced to reaction chamber gas, and utilizes argon gas by chamber pressure
It improves to atmospheric pressure, finally begins to speak to take piece.
The utility model has the advantages that method of the invention can reduce silicon carbide substrates in high temperature, low reaction chamber pressure and big flow hydrogen
The processing time under the conditions of gas avoids high speed and tends to scratch amplification of the hydrogen etching by substrate surface of anisotropic, separately
On the one hand using under lower temperature, high chamber pressure and small flow hydrogen atmosphere, using at a slow speed and tending to isotropic
Hydrogen etching substrate is handled, can effectively reduce and weaken the scratch of substrate surface, and reduce in epitaxial layer by draw
Other epitaxy defects derived from trace, the compatible existing epitaxy technique of this method, do not need to modify to core process parameter.
Detailed description of the invention
Fig. 1 is SiC epitaxial wafer surface deficiency analysis result；
Fig. 2 is SiC epitaxial wafer Analysis of Surface Topography result.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawings and examples.
The method of the present invention for reducing epitaxial wafer surface scratch, is suitable for one chip epitaxial furnace and planetary multi-disc
Carbide epitaxial furnace, can effectively reduce the scratch quantity on epitaxial wafer surface, and reduce in epitaxial layer as derived from scratch it
His epitaxy defect, this method are compatible with existing epitaxy technique, specifically includes the following steps:
(1) silicon carbide substrates are placed in SiC epitaxial system reaction chamber, are placed on graphite base, have on graphite base
There is tantalum carbide coating, silicon carbide substrates can choose the silicon face silicon carbide substrates in 4 ° or 8 ° of direction deviation<11-20>；
(2) reaction chamber gas is repeatedly replaced using argon gas, is then passed through hydrogen to reaction chamber, is gradually increased hydrogen
For flow to 20~40L/min, the pressure that reaction chamber is arranged is 700~1000mbar, and reaction chamber is gradually heated to 1400~
1500℃；
(3) after reaching set temperature, all parameter constants are kept, 10~60 minutes hydrogen in situ is carried out to silicon carbide substrates
Etching processing, at a slow speed, substrate surface Micro scratching is effectively removed under the etching technics of isotropic；
(4) after the completion of hydrogen etching processing in situ, it is gradually increased hydrogen flowing quantity in 5 minutes to 60~120L/min, uses up
Amount reduces hydrogen under high temperature, low reaction chamber pressure and big flow hydrogen atmosphere to the etch period of substrate, and hydrogen flowing quantity is best
It is 3 times of hydrogen flowing quantity in step (2), and reduces chamber pressure to normal process 80~200mbar of growth pressure, and will be anti-
Room temperature is answered to rise to 1550~1650 DEG C of growth temperature；
(5) after reaching growth temperature, the silicon source and carbon source of small flow are passed through to reaction chamber, wherein silicon source can be silane,
Dichloro hydrogen silicon, trichlorosilane, tetrachloro hydrogen silicon etc., carbon source can be methane, ethylene, acetylene, propane etc., control silicon source and hydrogen
Flow-rate ratio adjusts carbon source flow less than 0.03%, and control inlet end C/Si ratio is 1.05, and is passed through hydrogen chloride (HCl) gas, is controlled
Cl/Si ratio processed is 2.5, and is passed through n-shaped doped source high pure nitrogen (N2), or it is passed through p-type doped source trimethyl aluminium (TMA), it is raw
It grows with a thickness of 0.5-2 μm, doping concentration~1E18cm-3Highly doped buffer layer；
(6) flow for changing growth source and doped source by the way of linear gradual (ramping), controls silane and ethylene
Flow, set SiH4/H2Flow-rate ratio is 0.2%, and inlet end C/Si ratio is 1.05, and is passed through hydrogen chloride (HCl) gas, is set
Inlet end Cl/Si ratio is 2.5, and is passed through the nitrogen of 5sccm, and the extension time is set as 30 minutes, is set as growing epitaxy junction
Setting value needed for structure, according to common process program grow epitaxial structure, such as JBS structure, PiN structure, JFET structure,
MOSFET structure and SIT structure etc.；
(7) after the completion of growing epitaxial structure, growth source and doped source is closed, is down to reaction chamber temperature in atmosphere of hydrogen
Room temperature, reaction chamber temperature are cooled to room temperature, and hydrogen is discharged, and are passed through argon gas and are repeatedly replaced to reaction chamber gas, and benefit
Chamber pressure is improved to atmospheric pressure with argon gas, finally begins to speak to take piece.
The setting of hydrogen flowing quantity is suitable for large-scale silicon carbide epitaxy equipment in the present invention, can be with when for small-sized epitaxial furnace
Hydrogen flowing quantity is set according to actual conditions.
The Candela surface defect scanning analysis result of SiC epitaxial wafer is as shown in Figure 1, specific surface in the embodiment
Morphology analysis result is as shown in Fig. 2, can be seen that the method provided using this patent by data, it is possible to reduce outside silicon carbide
Prolong piece surface scratch.
Claims (5)
1. a kind of method for reducing epitaxial wafer surface scratch, it is characterised in that: the following steps are included:
(1) silicon carbide substrates are placed on the indoor graphite base of silicon carbide epitaxy system response；
(2) reaction indoor gas is repeatedly replaced using argon gas, is then passed through hydrogen to reaction chamber, is gradually increased hydrogen stream
For amount to 20~40L/min, the pressure that reaction chamber is arranged is 700~1000mbar, and reaction chamber is gradually heated to 1400~
1500℃；
(3) after reaching set temperature, all parameter constants are kept, 10~60 minutes hydrogen etchings in situ are carried out to silicon carbide substrates
Processing；
(4) after the completion of hydrogen etching processing in situ, it is gradually increased hydrogen flowing quantity in 5 minutes to 60~120L/min, and reduce
Reaction chamber temperature is risen to 1550~1650 DEG C of growth temperature to 80~200mbar by chamber pressure；
(5) after reaching growth temperature, the silicon source and carbon source of small flow are passed through to reaction chamber, control inlet end C/Si ratio is 1.05,
And it is passed through HCl gas, control Cl/Si ratio is 2.5；The flow-rate ratio of silicon source and hydrogen is controlled less than 0.03%, and is passed through doped source,
It grows with a thickness of 0.5-2 μm, doping concentration~1E18cm-3Highly doped buffer layer；
(6) using it is linear it is gradual by the way of the flow in growth source and doped source changed to setting needed for growth epitaxial structure
Value grows epitaxial structure according to common process program；
(7) after the completion of epitaxial structures growth, growth source and doped source is closed, reaction chamber temperature is down to room in atmosphere of hydrogen
Then temperature hydrogen is discharged, and be passed through argon gas and repeatedly replaced to reaction chamber gas, and mentioned chamber pressure using argon gas
Up to atmospheric pressure finally begins to speak to take piece.
2. the method according to claim 1 for reducing epitaxial wafer surface scratch, it is characterised in that: the doping in step (5)
Source is n-shaped doped source nitrogen or p-type doped source trimethyl aluminium.
3. the method according to claim 1 for reducing epitaxial wafer surface scratch, it is characterised in that: silicon source is silane, dichloro
Hydrogen silicon, trichlorosilane or tetrachloro hydrogen silicon, carbon source are methane, ethylene, acetylene or propane.
4. the method according to claim 1 for reducing epitaxial wafer surface scratch, it is characterised in that: outer described in step (6)
Prolonging structure is JBS structure, PIN structural, JFET structure, MOSFET structure or SIT structure.
5. the method according to claim 1 for reducing epitaxial wafer surface scratch, it is characterised in that: hydrogen stream in step (4)
Amount is 3 times of hydrogen flowing quantity in step (2).
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109518271A (en) * | 2017-09-18 | 2019-03-26 | 上海新昇半导体科技有限公司 | A kind of pretreatment of SiC epitaxial surface and epitaxial growth method |
| CN108166056A (en) * | 2018-01-16 | 2018-06-15 | 李哲洋 | A kind of growing method that can effectively reduce silicon carbide epitaxy surface defect |
| CN108878257B (en) * | 2018-05-04 | 2020-09-22 | 中国电子科技集团公司第五十五研究所 | Method for reducing defect density of silicon carbide epitaxial surface |
| JP6874737B2 (en) * | 2018-05-21 | 2021-05-19 | 三菱電機株式会社 | Method of manufacturing SiC substrate |
| CN112038213B (en) * | 2020-04-29 | 2022-06-14 | 厦门市三安集成电路有限公司 | Method for growing SiC epitaxial layers on two sides of SiC substrate and application |
| CN112490117B (en) * | 2020-12-08 | 2021-08-10 | 瀚天天成电子科技（厦门）有限公司 | Method for improving growth quality of silicon carbide epitaxial film |
| CN114232096A (en) * | 2021-11-22 | 2022-03-25 | 山东大学 | Method and device for quickly removing scratches and damages on surface of silicon carbide wafer |
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| CN105951179A (en) * | 2016-04-28 | 2016-09-21 | 山东大学 | Method for selectable single-side growth of graphene on SiC substrate |
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| CN105951179A (en) * | 2016-04-28 | 2016-09-21 | 山东大学 | Method for selectable single-side growth of graphene on SiC substrate |
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