CN104882365B - A kind of silicon carbide processing method - Google Patents
A kind of silicon carbide processing method Download PDFInfo
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- CN104882365B CN104882365B CN201410072719.6A CN201410072719A CN104882365B CN 104882365 B CN104882365 B CN 104882365B CN 201410072719 A CN201410072719 A CN 201410072719A CN 104882365 B CN104882365 B CN 104882365B
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 126
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 119
- 238000003672 processing method Methods 0.000 title description 15
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 238000004381 surface treatment Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910003978 SiClx Inorganic materials 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 13
- 229910002804 graphite Inorganic materials 0.000 description 11
- 239000010439 graphite Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000010792 warming Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
A kind of surface treatment method for carborundum of present invention offer, a kind of surface treatment method for carborundum, including：Silicon carbide powder and the carborundum crystals with surface to be treated are placed in the vacuum chamber；The silicon carbide powder is set to be heated to the first temperature so that it is decomposed so as to form rich Si atmosphere, the surface to be treated of the carborundum crystals is at least set to be located in the rich Si atmosphere, and the carborundum crystals is heated to second temperature, so that with the rich Si atmosphere etching reaction occurs for the surface to be treated of the carborundum crystals.
Description
Technical field
The present invention relates to a kind of silicon carbide processing method, more particularly to it is a kind of for etching silicon carbide wafer surface
Method.
Background technology
Carborundum is one of wide bandgap semiconductor materials received significant attention, and low with density, energy gap is big, breakdown
Voltage is high, and heat endurance is good, and frequency response characteristic is excellent, good chemical stability, is to make high frequency, high pressure, high power
The ideal substrate material of device and blue light-emitting diode.In recent years, with the rise that graphene is studied, silicon carbide epitaxy is utilized
Graphene turns into one of method for being most hopeful to realize graphene electronic device application.
Silicon carbide wafer generally use Mechanical Method as homogeneity or hetero-epitaxy substrate is cut to crystal, and is passed through
Mechanically and chemically polishing forms, as shown in figure 1, the surface of silicon carbide wafer is generally damaged, spreads all over as caused by mechanical polishing
Cut.And the epitaxial material with premium properties is prepared on silicon carbide wafer surface, then need etching silicon carbide chip
Surface, to remove these cuts on surface, make surface that there is the orderly surface topography of atom level, this is advantageous to high quality extension
The growth of material.But due to the excellent physics of carborundum, chemical stability, it only could effectively be carved under the high temperature conditions
Erosion, therefore the wafer engraving technology accumulated in silicon materials is dfficult to apply to carborundum.
Conventional silicon carbide wafer lithographic technique includes：1. wet etching, rotten in the molten caustic soda or salt less than 1000 DEG C
Lose carborundum（J.Vac.Sci.Technol.A4,590(1986)）；2. dry etching, using hydrogen, elemental gas containing halogen family or
Mixed gas etches at higher than 1000 DEG C（Surf.Sci.602,2936(2008),Phys.Rev.Lett.76,3412
(2000)）；Or using atmosphere containing Si such as silane in 1600~2200 DEG C of etching silicon carbides（Mater.Sci.Forum717-
720,573 (2012), J.Cryst.Growth380,61 (2013)）.
Wherein wet etching has removal efficiency height, simple to operate, the low advantage of cost, but poor controllability, can be on surface
Produce etch pit and be difficult to the impurity removed.And although in general dry etching controllability is good, substrate surface cleaning, use
Cost is high, gas attack is strong, to equipment requirement height.Above two technology is to the etching of C faces carborundum simultaneously, in large scale model
It is not fully up to expectations to place effect.
The content of the invention
Therefore, a kind of it is an object of the invention to overcome above-mentioned prior art the defects of, there is provided surface for carborundum
Processing method.
The invention provides a kind of surface treatment method for carborundum, including：
1）Silicon carbide powder and the carborundum crystals with surface to be treated are placed in the vacuum chamber；
2）The silicon carbide powder is set to be heated to the first temperature so that its decomposition at least makes institute so as to form rich Si atmosphere
The surface to be treated for stating carborundum crystals is located in the rich Si atmosphere, and the carborundum crystals is heated to second
Temperature, so that with the rich Si atmosphere etching reaction occurs for the surface to be treated of the carborundum crystals.
According to method provided by the invention, wherein first temperature, between 1000 DEG C and 2000 DEG C, described second is warm
Degree is between 1000 DEG C and 2000 DEG C.
According to method provided by the invention, wherein first temperature is more than or equal to the second temperature, first temperature
Difference between degree and the second temperature is less than 500 DEG C.
According to method provided by the invention, wherein when etching reaction occurs, the air pressure in the vacuum chamber is less than 104Pa。
According to method provided by the invention, wherein when etching reaction occurs, the air pressure of the vacuum chamber is 10-4Pa to 10Pa
Between.
According to method provided by the invention, wherein the average grain diameter of the silicon carbide powder is less than 1 millimeter.
According to method provided by the invention, wherein the heating to the silicon carbide powder is completed by primary heater, to institute
The heating for stating carborundum crystals is completed by secondary heater, and the temperature of first, second heater can control independently of each other.
According to method provided by the invention, wherein heating to the silicon carbide powder and adding to the carborundum crystals
Heat is completed by same heater, and the silicon carbide powder is placed on two temperature phases of the heater with the carborundum crystals
In same or different warm area.
Method provided by the invention can etch large area, close perfect, row to the silicon carbide wafer of arbitrary orientation
Show the step appearance of sequence, and it is simple and easy, cost is low, controllability is good, the pollution of exogenous impurity will not be introduced.
Brief description of the drawings
Embodiments of the present invention is further illustrated referring to the drawings, wherein：
Fig. 1 shows the mechanical scratch on silicon carbide wafer surface；
Fig. 2 shows the process schematic of 1 method provided according to an embodiment of the invention；
Fig. 3 shows the AFM X rays topographs of the wafer surface handled by 1 method provided according to an embodiment of the invention；
Fig. 4 shows the AFM X rays topographs of the wafer surface handled by 2 methods provided according to an embodiment of the invention；
Fig. 5 shows the process schematic of 3 methods provided according to an embodiment of the invention；
Fig. 6 shows the AFM X rays topographs of the wafer surface handled by 3 methods provided according to an embodiment of the invention；
Fig. 7 shows the process schematic of 4 methods provided according to an embodiment of the invention；
Fig. 8 shows the AFM X rays topographs of the wafer surface handled by 4 methods provided according to an embodiment of the invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with specific embodiment, to this
Invention is further described.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
Embodiment 1
The present embodiment provides a kind of silicon carbide processing method, and this method is described in detail referring to Fig. 2.This
The silicon carbide processing method that embodiment provides comprises the following steps：
1）2 × 2 square centimeters 6H-SiC (000-1) silicon carbide wafer 1 is provided, under normal temperature, normal pressure, successively using third
Ketone, absolute ethyl alcohol are cleaned by ultrasonic the silicon carbide wafer 1, and are cleaned up with deionized water, to remove the surface of silicon carbide wafer 1
Organic matter.Then further it is cleaned by ultrasonic with watery hydrochloric acid, diluted hydrofluoric acid, and is cleaned up with deionized water, removes carborundum
The metal impurities and silica oxide layer on the surface of chip 1.Finally the silicon carbide wafer 1 after cleaning is dried up with nitrogen.
2）Average grain diameter is uniformly fitted into TaC crucibles 3 for the silicon carbide powder 2 of 5 microns, it is ensured that silicon carbide powder
2 filling thickness in TaC crucibles 3 is put into graphite crucible 4 more than 1 millimeter, then by TaC crucibles 3.
3）Silicon carbide wafer 1 is placed in the top of silicon carbide powder 2, and by surface to be etched upward, avoided and carborundum
Powder 2 is in contact.
4）Graphite crucible 4 is put into the heating in vacuum chamber 5 with heater, with high-purity argon gas by the heating in vacuum chamber 5
Gas washing 2 times, then vacuumizing makes air pressure reach 10-2Pa, while graphite crucible 4 is warming up to 1400 DEG C using heater, herein
Temperature 30 minutes, Temperature fall to room temperature, obtains etched silicon carbide wafer afterwards.
Because dusty material than block materials is easier to decompose, therefore silicon carbide powder is easier to point than silicon carbide wafer
Solution.After silicon carbide powder decomposes, produce a large amount of rich Si atmosphere (this is due to that the saturated vapor pressure ratio of Si/C atoms is very big,
About 106).The rich Si atmosphere destroys the equilibrium gas atmosphere on silicon carbide wafer surface, makes rich Si atmosphere and silicon carbide wafer table
The C atoms and Si atoms in face are reacted, and form SiC2Or, Si2The gaseous moleculars such as C, silicon carbide wafer surface is entered so as to reach
The function of row etching.Because there is higher surface energy, therefore above-mentioned corrasion is preferentially in chip table at wafer surface blemish
Carried out at the defects of face, and progressively etching forms complete table top and step appearance.The height of its step is about half or one
Structure cell height（Final mesa width is determined by the intrinsic drift angle of chip）.
The AFM X rays topographs for the C faces 6H-SiC wafer surfaces that the method that the present embodiment provides is obtained are as shown in Figure 3.Due to
The cutting angle of the commercial silicon carbide wafer bought is inevitably present certain error, and silicon carbide wafer surface is not tight
The C faces of lattice, therefore the wafer surface after etching can form step appearance.In the present embodiment, the mesa width of the wafer surface is about
For 300 nanometers, shoulder height is about 1.5 nanometers.It can be seen that the silicon carbide processing method that the present embodiment provides
The silicon carbide obtained has a wide range of smooth, aligned orderly step appearance, and step is continuous and straight, and effectively goes
Except the damage on silicon carbide wafer surface.In addition, the method that the present embodiment provides uses the silicon carbide powder of identical chemical composition,
The pollution of exogenous impurity will not be introduced.
Embodiment 2
The present embodiment provides a kind of silicon carbide processing method, comprises the following steps：
1）3 × 3 square centimeters 4H-SiC (000-1) silicon carbide wafer 1 is provided, under normal temperature, normal pressure, successively using third
Ketone, absolute ethyl alcohol are cleaned by ultrasonic the silicon carbide wafer 1, and are cleaned up with deionized water, to remove the surface of silicon carbide wafer 1
Organic matter.Then further it is cleaned by ultrasonic with watery hydrochloric acid, diluted hydrofluoric acid, and is cleaned up with deionized water, removes carborundum
The metal impurities and silica oxide layer on the surface of chip 1.Finally the silicon carbide wafer 1 after cleaning is dried up with nitrogen.
2）Average grain diameter is uniformly fitted into WC crucibles 3 for the silicon carbide powder 2 of 10 microns, it is ensured that silicon carbide powder
2 filling thickness in WC crucibles 3 is put into graphite crucible 4 more than 1 millimeter, then by WC crucibles 3.
3）Silicon carbide wafer 1 is placed in the top of silicon carbide powder 2, and by surface to be etched upward.
4）Graphite crucible 4 is put into the heating in vacuum chamber 5 with heater, with high-purity argon gas by the heating in vacuum chamber 5
Gas washing 2 times, then vacuumizing makes air pressure reach 10-3Pa, while graphite crucible 4 is warming up to 1450 DEG C using heater, herein
Temperature 25 minutes, Temperature fall to room temperature, obtains etched silicon carbide wafer afterwards.
The AFM X rays topographs of C faces 4H-SiC wafer surfaces that the method that the present embodiment provides is obtained as shown in figure 4, its
Face width is about 200 nanometers, and shoulder height is about 1 nanometer.It can be seen that at the silicon carbide that the present embodiment provides
The silicon carbide that reason method is obtained has a wide range of smooth, aligned orderly step appearance, and step is continuous and straight, and has
Eliminate to effect the damage on silicon carbide wafer surface.In addition, the method that the present embodiment provides uses the carbonization of identical chemical composition
Si powder, the pollution of exogenous impurity will not be introduced.
Embodiment 3
The present embodiment provides a kind of silicon carbide processing method, and this method is described in detail referring to Fig. 5.This
The silicon carbide processing method that embodiment provides comprises the following steps：
1）2 inches 6H-SiC (0001) silicon carbide wafer 21 is provided, under normal temperature, normal pressure, successively using acetone, anhydrous
EtOH Sonicate cleans the silicon carbide wafer 21, and is cleaned up with deionized water, to remove the organic of the surface of silicon carbide wafer 21
Thing.Then further it is cleaned by ultrasonic with watery hydrochloric acid, diluted hydrofluoric acid, and is cleaned up with deionized water, removes silicon carbide wafer
The metal impurities and silica oxide layer on 21 surfaces.Finally the silicon carbide wafer 21 after cleaning is dried up with nitrogen.
2）Average grain diameter is uniformly fitted into graphite crucible 24 for the silicon carbide powder 22 of 20 microns, it is ensured that carborundum
Filling thickness of the powder 22 in graphite crucible 24 is more than 1 millimeter.
3）Silicon carbide wafer 21 is supported with being placed in three centimeters of the top of silicon carbide powder 22 with graphite frame, and will be to be etched
Surface down.
4）Graphite crucible 24 is put into the heating in vacuum chamber 25 with heater, with high-purity argon gas by the heating in vacuum chamber
25 gas washings 2 times, then vacuumizing makes air pressure reach 5 × 10-3Pa, while graphite crucible 24 is warming up to 1300 using heater
DEG C, in this temperature 40 minutes, Temperature fall to room temperature, obtained etched silicon carbide wafer afterwards.
The AFM X rays topographs of Si faces 6H-SiC wafer surfaces that the method that the present embodiment provides is obtained as shown in fig. 6, its
Face width is about 200 nanometers, and shoulder height is about 1.5 nanometers.It can be seen that the silicon carbide that the present embodiment provides
The silicon carbide that processing method is obtained has a wide range of smooth, aligned orderly step appearance, and step is continuous and straight, and
It effectively removes the damage on silicon carbide wafer surface.In addition, the method that the present embodiment provides uses the carbon of identical chemical composition
SiClx powder, the pollution of exogenous impurity will not be introduced.
Embodiment 4
The present embodiment provides a kind of silicon carbide processing method, and this method is described in detail referring to Fig. 7.This
The silicon carbide processing method that embodiment provides comprises the following steps：
1）2 inches 6H-SiC (0001) silicon carbide wafer 31 is provided, under normal temperature, normal pressure, successively using acetone, anhydrous
EtOH Sonicate cleans the silicon carbide wafer 31, and is cleaned up with deionized water, to remove the organic of the surface of silicon carbide wafer 31
Thing.Then further it is cleaned by ultrasonic with watery hydrochloric acid, diluted hydrofluoric acid, and is cleaned up with deionized water, removes silicon carbide wafer
The metal impurities and silica oxide layer on 31 surfaces.Finally the silicon carbide wafer 31 after cleaning is dried up with nitrogen.
2）Average grain diameter is uniformly fitted into TaC crucibles 33 for the silicon carbide powder 32 of 100 rans, it is ensured that carborundum
Filling thickness of the powder 32 in TaC crucibles 33 is more than 1 millimeter.
3）TaC crucibles 33 are put into heating in vacuum chamber 35, wherein the heating in vacuum chamber 35 have can independent temperature control, the
One heater 361 and secondary heater 362.TaC crucibles 33 are placed in the heating region of primary heater 361, by Si faces
6H-SiC (0001) silicon carbide wafer 31 is positioned on the heating region of secondary heater 362.
4）With high-purity argon gas by 35 gas washing of heating in vacuum chamber 2 times, then vacuumizing makes air pressure reach 0.1Pa, simultaneously will
Primary heater 361 is warming up to 1500 DEG C, and secondary heater 362 is warming up into 1300 DEG C, in this temperature 45 minutes, afterwards
Temperature fall obtains etched silicon carbide wafer to room temperature.
The AFM X rays topographs of Si faces 6H-SiC wafer surfaces that the method that the present embodiment provides is obtained as shown in figure 8, its
Face width is about 200 nanometers, and shoulder height is about 1.5 nanometers.It can be seen that the silicon carbide that the present embodiment provides
The silicon carbide that processing method is obtained has a wide range of smooth, aligned orderly step appearance, and step is continuous and straight, and
It effectively removes the damage on silicon carbide wafer surface.Further, since the heating-up temperature of silicon carbide powder is higher than to carborundum
The heating-up temperature of chip, silicon carbide powder is set to be easier to decompose.
The present embodiment provide method in, employ can independent control two heaters respectively to silicon carbide powder and carbon
SiClx chip is heated, therefore neatly the heating-up temperature of silicon carbide wafer and silicon carbide powder can be regulated and controled respectively, so as to
Silicon carbide powder can be made to be heated to the temperature for suitably producing rich Si atmosphere, and make silicon carbide wafer be heated to it is suitable with it is rich
The temperature of etching reaction occurs for Si atmosphere, so as to improve the speed and effect of wafer surface processing.
According to other embodiments of the invention, the temperature of the primary heater 361 of silicon carbide powder heating is preferably greater than
Equal to the temperature of the secondary heater 362 heated to silicon carbide wafer, both temperature differences are preferably smaller than 500 DEG C.
According to other embodiments of the invention, can also utilize other modes silicon carbide powder and silicon carbide wafer it
Between form temperature difference.Such as by making silicon carbide powder and silicon carbide wafer respectively positioned at two different temperature of the temperature of heater
Qu Zhong.
According to other embodiments of the invention, wherein in etching silicon carbide chip, the work gas of the vacuum chamber where it
Pressure is less than 104Pa, preferably 10-4Pa-10Pa.During etching, the heating-up temperature to silicon carbide powder is preferably 1000-2000 DEG C,
More preferably 1300-1500 DEG C.Heating-up temperature to silicon carbide wafer is preferably 1000-2000 DEG C, more preferably 1300-1500
℃.The difference of heating-up temperature and the heating-up temperature to silicon carbide wafer to silicon carbide powder is preferably 0-500 DEG C.Etch period is excellent
Elect 10-360 minutes as, the preferably time is 20-45 minutes.
According to other embodiments of the invention, the crystal formation of wherein silicon carbide powder is not particularly limited, and can use business carbon
SiClx monocrystal etc..The average grain diameter of silicon carbide powder is preferably smaller than 1 millimeter, more preferably less than 50 microns.
According to other embodiments of the invention, wherein silicon carbide powder can also be placed on other high-temperature resistant containers during etching
In, or in the high-temperature crucible of other materials, such as Ta, W etc..
Method provided by the invention is applicable to the surface etch of the silicon carbide wafer of any crystal orientation, such as C faces carborundum
（SiC（000-1））Chip, Si faces carborundum（SiC（0001））Chip etc..In addition, method provided by the invention can also be to it
The surface of the carborundum bulk of its type performs etching.
In method provided by the invention, silicon carbide powder is consumed less in etching reaction, and remaining silicon carbide powder may be used also
To reuse, therefore it is cheap to etch cost.
Method provided by the invention can etch large area, close perfect, row to the silicon carbide wafer of arbitrary orientation
Show the step appearance of sequence, and it is simple and easy, cost is low, controllability is good, the pollution of exogenous impurity will not be introduced.
To being said according to the silicon carbide processing method of the present invention by taking silicon carbide wafer as an example in above-described embodiment
It is bright, it will be appreciated by persons skilled in the art that method provided by the invention can be not only used for silicon carbide wafer, can also use
It is surface-treated in other types of carborundum crystals, such as carborundum block etc..
Technical scheme is described above with reference to specific embodiment, it will be appreciated by those skilled in the art that
, the various parameters in above-described embodiment are exemplary only, and non-limiting, and those skilled in the art can be according to this
The technical scheme provided is provided and makes various modifications.
It should be noted last that the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted.Although ginseng
The present invention is described in detail according to embodiment, it will be understood by those within the art that, to the technical side of the present invention
Case is modified or equivalent substitution, and without departure from the spirit and scope of technical solution of the present invention, it all should cover in the present invention
Right among.
Claims (8)
1. a kind of surface treatment method for carborundum, including：
1) silicon carbide powder and the carborundum crystals with surface to be treated are placed in the vacuum chamber；
2) silicon carbide powder is made to be heated to the first temperature so that its decomposition at least makes the carbon so as to form rich Si atmosphere
The surface to be treated of SiClx crystal is located in the rich Si atmosphere, and the carborundum crystals is heated to the second temperature
Degree, so that with the rich Si atmosphere etching reaction occurs for the surface to be treated of the carborundum crystals.
2. according to the method for claim 1, wherein first temperature is between 1000 DEG C and 2000 DEG C, second temperature
Degree is between 1000 DEG C and 2000 DEG C.
3. according to the method for claim 1, wherein first temperature is more than or equal to the second temperature, first temperature
Difference between degree and the second temperature is less than 500 DEG C.
4. according to the method for claim 1, wherein when etching reaction occurs, the air pressure in the vacuum chamber is less than 104Pa。
5. according to the method for claim 4, wherein when etching reaction occurs, the air pressure of the vacuum chamber is 10-4Pa is extremely
Between 10Pa.
6. according to the method for claim 1, wherein the average grain diameter of the silicon carbide powder is less than 1 millimeter.
7. according to the method for claim 1, wherein the heating to the silicon carbide powder is completed by primary heater, to institute
The heating for stating carborundum crystals is completed by secondary heater, and the temperature of first, second heater can control independently of each other.
8. according to the method for claim 1, wherein heating to the silicon carbide powder and to the carborundum crystals
Heating is completed by same heater, and the silicon carbide powder is individually positioned in two of the heater with the carborundum crystals
In the warm area that temperature is identical or two temperature are different.
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