CN104835729A - Template thermal field induction forming method for flexibly reducing grapheme patterned electrode - Google Patents
Template thermal field induction forming method for flexibly reducing grapheme patterned electrode Download PDFInfo
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- CN104835729A CN104835729A CN201510159274.XA CN201510159274A CN104835729A CN 104835729 A CN104835729 A CN 104835729A CN 201510159274 A CN201510159274 A CN 201510159274A CN 104835729 A CN104835729 A CN 104835729A
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- 230000006698 induction Effects 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 60
- 229910021389 graphene Inorganic materials 0.000 claims description 58
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229920002799 BoPET Polymers 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229920000742 Cotton Polymers 0.000 claims description 3
- 229920002678 cellulose Polymers 0.000 claims description 3
- 239000001913 cellulose Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920006267 polyester film Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000004146 energy storage Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012983 electrochemical energy storage Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Provided is a template thermal field induction forming method for flexibly reducing grapheme patterned electrodes. The method comprises: firstly, processing a microstructure with corresponding patterns on the surface of a metal template, heating the metal template by using a heat source, and then using mechanical pressure to make the metal template contact with the oxidized grapheme film coated on the surface of a flexible substrate, and finally using mechanical pressure to move the metal template away from the surface of the oxidized grapheme film, so as to obtain patterned reduced grapheme on the surface of the flexible substrate, wherein the patterns of the patterned reduced grapheme are consistent with the microstructure of the high-temperature metal template. The method can manufacture high-resolution grapheme patterns in high efficiency, low cost, and large scale, and the method provides technical support for large-scale manufacturing of flexible electronic devices, flexible display devices, wearable electronic device, and flexible energy storage devices.
Description
Technical field
The invention belongs to micro-fabrication technology field, be specifically related to a kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes.
Background technology
The appearance of grapheme material makes flexible electronic in recent years obtain the development of explosion type.Grapheme material has outstanding electricity, mechanics, chemical property, patterned Flexible graphene electrode has and wide potential using value in fields such as flexible microelectronics, photoelectron, electrochemical energy storages, and the concrete devices field such as such as current flexible field-effect transistor, flexible thin-film solar cell, flexible electrochemical memory, flexible display competitively utilize patterned Graphene electrodes to replace traditional electrode pattern.For this reason, realizing the high efficiency of Graphene figure, low cost, manufacture on a large scale, is the matter of utmost importance of development graphene-based flexible electronics/photonic device.
In order to manufacture patterned Graphene electrodes, Chinese scholars has developed multiple different manufacturing process, such as, use inkjet technology the pointwise of Graphene ink to be sprayed can be linked to be certain Graphene figure on substrate, utilize the contact scanning on graphene oxide film of high temperature atomic force probe can realize reduced graphene figure on track while scan, utilize laser directly can write at graphene oxide film surface scan to obtain reduced graphene pattern.But above-mentioned ink jet printing process, thermal probe scanning process, laser direct-writing process etc. are all processing methods of serial; be difficult to realize the low cost of patterned graphene electrode, high efficiency, scale manufacture; become the key technology bottleneck of the development such as restriction graphene-based flexible electronic device, photonic device, electrochemical device; need to develop a kind of new manufacture method from principle, realize the low cost of patterned graphene electrode, high efficiency, scale manufacture.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes, there is the manufacturing capacity of high efficiency, low cost, scale.
In order to achieve the above object, the technical scheme that the present invention takes is:
A template thermal field induction manufacturing process for flexible reduced graphene patterned electrodes, comprises the following steps:
1) there is the micro-structural of corresponding pattern in metal form 1 Surface Machining, utilize thermal source 2 pairs of metal forms 1 to heat, make the temperature of metal form 1 at 200 DEG C ~ 800 DEG C;
2) then utilize mechanical pressure 3 that metal form 1 is touched to be coated in the graphene oxide film 4 on flexible substrate 5 surface, wherein applied mechanical pressure 3 is to ensure that metal form 1 and graphene oxide film 4 close contact are limited, and time of contact is between 1 millisecond to 1 minute;
3) finally utilize mechanical force 6 to be removed from graphene oxide film 4 surface by metal form 1, namely obtain patterned reduced graphene 7 on flexible substrate 5 surface, wherein the pattern of patterned reduced graphene 7 is consistent with the micro-structural of high-temperature metal template 1.
Described metal form 1, for having the metal of high thermal conductivity coefficient, comprises copper, stainless steel, nickel or chromium.
The thickness of described graphene oxide film 4 is 0.1 micron to 100 microns.
Described flexible substrate 5 is cellulose paper, cotton, polyimide film (PI film) or high temperature resistance polyester film (PET film),
The present invention can high efficiency, low cost, produce high-resolution graphene pattern on a large scale, for the scale manufactures such as flexible electronic, Flexible Displays, wearable electronic, flexible energy storage device provide technical support.
Accompanying drawing explanation
Fig. 1 is the temperature-rise period figure of metal form.
Fig. 2 is template thermal field Induction Process figure.
Fig. 3 is that the shaping of reduced graphene electrode is separated schematic diagram.
Fig. 4 a is embodiment metal form pictorial diagram; Fig. 4 b is the graphical reduced graphene electrode figure on photo paper surface; Fig. 4 c is the scanning electron microscopy phenogram of reduced graphene electrode pattern, and Fig. 4 d is the partial enlarged drawing of Fig. 4 c, and Fig. 4 e is the light microscope enlarged drawing of reduced graphene electrode pattern.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further details.
A template thermal field induction manufacturing process for flexible reduced graphene patterned electrodes, comprises the following steps:
1) with reference to Fig. 1, embossment structure is had in metal form 1 Surface Machining, the material of metal form 1 is the metal that copper, stainless steel, nickel, chromium etc. have high thermal conductivity coefficient, utilizes thermal source 2 pairs of metal forms 1 to heat, makes the temperature of metal form 1 at 200 DEG C ~ 800 DEG C;
2) with reference to Fig. 2, then utilize mechanical pressure 3 that metal form 1 is touched to be coated in the graphene oxide film 4 on flexible substrate 5 surface, flexible substrate 5 is cellulose paper, cotton, polyimide film (PI film) or high temperature resistance polyester film (PET film), the thickness of graphene oxide film 4 is 0.1 micron to 100 microns, the size of mechanical pressure 3 is advisable can make metal form 1 close contact graphene oxide film 4, time of contact is between 1 millisecond to 1 minute
3) with reference to Fig. 3, mechanical force 6 is finally utilized to be removed from graphene oxide film 4 surface by metal form 1, namely obtain patterned reduced graphene 7 on flexible substrate 5 surface, wherein the pattern of patterned reduced graphene 7 is consistent with the micro-structural of metal form 1.
Below in conjunction with embodiment, the present invention is described in detail.
In order to show the feasibility that flexible reduced graphene patterned electrodes template thermal field is induced and high efficiency, the present embodiment employs high temperature stainless steel template and carries out graphical thermal induction reduction to graphene oxide, with reference to Fig. 4, GO in figure is the english abbreviation of graphene oxide (Graphene Oxide), and rGO is the english abbreviation of reduced graphene (reduced Graphene Oxide).In an embodiment, first utilize milling method to mill out the micro-structural of interdigital figure on stainless steel bulk surface, obtain metal form, with reference to Fig. 4 a, utilize electric heater to heat metal form, heating-up temperature is 650 DEG C; Go out one deck graphene oxide film by the method for spray application at photo paper surface spraying, with reference to Fig. 4 b, the thickness of graphene oxide film is 2 microns; Metal form catalytic oxidation graphene film is speeded away, interdigital patterned reduced graphene patterned electrodes can be obtained on photo paper surface, Fig. 4 c and Fig. 4 d is the scanning electron microscopy phenogram of reduced graphene electrode pattern, and Fig. 4 e is the light microscope enlarged drawing of reduced graphene electrode pattern.
Claims (4)
1. a template thermal field induction manufacturing process for flexible reduced graphene patterned electrodes, is characterized in that, comprise the following steps:
1) there is the micro-structural of corresponding pattern in metal form (1) Surface Machining, utilize thermal source (2) to heat metal form (1), make the temperature of metal form (1) at 200 DEG C ~ 800 DEG C;
2) then utilize mechanical pressure (3) that metal form (1) is touched and be coated in the surperficial graphene oxide film (4) of flexible substrate (5), wherein applied mechanical pressure (3) is to ensure that metal form (1) and graphene oxide film (4) close contact are limited, and time of contact is between 1 millisecond to 1 minute;
3) mechanical force (6) is finally utilized to be removed from graphene oxide film (4) surface by metal form (1), namely obtain patterned reduced graphene (7) on flexible substrate (5) surface, wherein the pattern of patterned reduced graphene (7) is consistent with the micro-structural of high-temperature metal template (1).
2. the template thermal field induction manufacturing process of a kind of flexible reduced graphene patterned electrodes according to claim 1, is characterized in that: described metal form (1), for having the metal of high thermal conductivity coefficient, comprises copper, stainless steel, nickel or chromium.
3. the template thermal field induction manufacturing process of a kind of flexible reduced graphene patterned electrodes according to claim 1, is characterized in that: the thickness of described graphene oxide film (4) is 0.1 micron to 100 microns.
4. the template thermal field induction manufacturing process of a kind of flexible reduced graphene patterned electrodes according to claim 1, is characterized in that: described flexible substrate (5) is cellulose paper, cotton, polyimide film (PI film) or high temperature resistance polyester film (PET film).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510159274.XA CN104835729B (en) | 2015-04-03 | 2015-04-03 | A kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510159274.XA CN104835729B (en) | 2015-04-03 | 2015-04-03 | A kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes |
Publications (2)
| Publication Number | Publication Date |
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| CN104835729A true CN104835729A (en) | 2015-08-12 |
| CN104835729B CN104835729B (en) | 2017-12-26 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789425A (en) * | 2016-01-05 | 2016-07-20 | 中国科学院金属研究所 | Cellulose paper/Bi2Te3 thermoelectric thin-film composite material and preparation method thereof |
| CN107024806A (en) * | 2017-04-20 | 2017-08-08 | 深圳市华星光电技术有限公司 | Preparation method, display base plate and the liquid crystal display panel of display base plate |
| CN107146770A (en) * | 2017-05-10 | 2017-09-08 | 京东方科技集团股份有限公司 | A kind of preparation method of array base palte, array base palte and display device |
| CN107422546A (en) * | 2017-04-21 | 2017-12-01 | 深圳市华星光电技术有限公司 | The preparation method and substrate of Graphene electrodes, display |
| CN108447695A (en) * | 2018-02-02 | 2018-08-24 | 北京理工大学 | A kind of preparation method of folding paper substrate micro super capacitor |
| CN109411149A (en) * | 2017-08-18 | 2019-03-01 | 京东方科技集团股份有限公司 | Graphene circuit pattern and preparation method thereof, electronic product |
| CN109580739A (en) * | 2018-12-17 | 2019-04-05 | 电子科技大学 | A kind of flexible exhalation ammonia gas sensor and preparation method thereof based on porous-substrates |
| CN109725177A (en) * | 2019-03-05 | 2019-05-07 | 西安交通大学 | A kind of measurement method of monodimension nanometer material interface bonding energy |
| CN110944414A (en) * | 2019-10-21 | 2020-03-31 | 珠海烯蟀科技有限公司 | Microcrystalline glass or mica sheet heating device and electrode connection method thereof |
| CN114628156A (en) * | 2020-12-11 | 2022-06-14 | 中国科学院大连化学物理研究所 | Preparation method of flexible planar micro energy storage device |
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Cited By (16)
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| CN105789425B (en) * | 2016-01-05 | 2019-01-18 | 中国科学院金属研究所 | A kind of cellulose paper/Bi2Te3Thermal electric film composite material and preparation method |
| CN105789425A (en) * | 2016-01-05 | 2016-07-20 | 中国科学院金属研究所 | Cellulose paper/Bi2Te3 thermoelectric thin-film composite material and preparation method thereof |
| CN107024806A (en) * | 2017-04-20 | 2017-08-08 | 深圳市华星光电技术有限公司 | Preparation method, display base plate and the liquid crystal display panel of display base plate |
| WO2018192019A1 (en) * | 2017-04-20 | 2018-10-25 | 深圳市华星光电技术有限公司 | Manufacturing method of display substrate, display substrate, and liquid crystal display panel |
| CN107422546A (en) * | 2017-04-21 | 2017-12-01 | 深圳市华星光电技术有限公司 | The preparation method and substrate of Graphene electrodes, display |
| CN107146770A (en) * | 2017-05-10 | 2017-09-08 | 京东方科技集团股份有限公司 | A kind of preparation method of array base palte, array base palte and display device |
| US10551695B2 (en) | 2017-05-10 | 2020-02-04 | Boe Technology Group Co., Ltd. | Manufacturing method of array substrate, array substrate and display apparatus |
| CN109411149B (en) * | 2017-08-18 | 2021-01-22 | 京东方科技集团股份有限公司 | Graphene circuit pattern, preparation method thereof and electronic product |
| CN109411149A (en) * | 2017-08-18 | 2019-03-01 | 京东方科技集团股份有限公司 | Graphene circuit pattern and preparation method thereof, electronic product |
| US11372300B2 (en) | 2017-08-18 | 2022-06-28 | Boe Technology Group Co., Ltd. | Method of preparing graphene circuit pattern |
| CN108447695A (en) * | 2018-02-02 | 2018-08-24 | 北京理工大学 | A kind of preparation method of folding paper substrate micro super capacitor |
| CN109580739A (en) * | 2018-12-17 | 2019-04-05 | 电子科技大学 | A kind of flexible exhalation ammonia gas sensor and preparation method thereof based on porous-substrates |
| CN109725177B (en) * | 2019-03-05 | 2020-05-22 | 西安交通大学 | Method for measuring one-dimensional nano material interface binding energy |
| CN109725177A (en) * | 2019-03-05 | 2019-05-07 | 西安交通大学 | A kind of measurement method of monodimension nanometer material interface bonding energy |
| CN110944414A (en) * | 2019-10-21 | 2020-03-31 | 珠海烯蟀科技有限公司 | Microcrystalline glass or mica sheet heating device and electrode connection method thereof |
| CN114628156A (en) * | 2020-12-11 | 2022-06-14 | 中国科学院大连化学物理研究所 | Preparation method of flexible planar micro energy storage device |
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