CN105741980A - Flexible self-support graphene conductive thin film with microstructure pattern on surface and preparation method of flexible self-support graphene conductive thin film - Google Patents
Flexible self-support graphene conductive thin film with microstructure pattern on surface and preparation method of flexible self-support graphene conductive thin film Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 106
- 238000002360 preparation method Methods 0.000 title claims abstract description 39
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000243 solution Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 24
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000020 Nitrocellulose Substances 0.000 claims abstract description 14
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 claims abstract description 14
- 229920001220 nitrocellulos Polymers 0.000 claims abstract description 14
- 229940071870 hydroiodic acid Drugs 0.000 claims abstract description 12
- 239000007864 aqueous solution Substances 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 10
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 238000004146 energy storage Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229940079938 nitrocellulose Drugs 0.000 claims description 11
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 238000001291 vacuum drying Methods 0.000 claims description 10
- 238000006722 reduction reaction Methods 0.000 claims description 8
- 238000004381 surface treatment Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 238000009776 industrial production Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a flexible self-support graphene conductive thin film with a microstructure pattern on the surface and a preparation method of the flexible self-support graphene conductive thin film. The preparation method comprises the following steps of filling a cellulose nitrate solution in a female template with the microstructure patter on the surface, drying and stripping the female template to obtain a cellulose nitrate thin film with a reverse microstructure as a substrate; carrying out plasma surface processing on the substrate; filling a graphene oxide solution in the substrate and drying graphene oxide solution to form a film; placing the obtained graphene oxide thin film in hydroiodic acid aqueous solution for heating and reduction; and removing the cellulose nitrate thin film to obtain the flexible self-support graphene conductive thin film with the same microstructure pattern as the female template. The method has the advantages of simplicity in preparation, convenience in operation, simplicity in device and process requirements, cheap raw material and low cost, and industrial production at a large scale can be achieved. The prepared self-support graphene film is high in toughness and high in conductivity, the microstructure pattern on the surface is adjustable, and the self-support graphene film is expected to be used for aspects such as flexible electronics, flexible display, a wearable sensing device and an energy storage device.
Description
Technical field
The invention belongs to grapheme material preparing technical field, the preparation method particularly to a kind of surface with the flexible self-supporting graphene conductive film of micro structured pattern.
Background technology
Grapheme material has outstanding electricity, mechanics, chemical property, and the Flexible graphene conductive film of micro structured pattern has and wide potential using value in fields such as flexible microelectronics, photoelectron, sensing, energy storages.The Flexible graphene conductive film such as utilizing micro structured pattern can be effectively improved the detection sensitivity of Graphene flexible sensing.The concrete devices field such as current flexible thin-film solar cell, flexible electrochemical memorizer, flexible display competitively utilize the Flexible graphene electrode of patterning to replace traditional electrode pattern.Therefore, it is achieved the high efficiency of the graphene film of micro structured pattern, low cost, manufacture on a large scale, it is the key issue of development graphene-based flexible electronic device.
In order to prepare the Flexible graphene conductive film of micro structured pattern, Chinese scholars has been developed in multiple different manufacturing process.Such as Chen et al. utilizes " expiration pattern method " to be prepared for the self-supporting graphene film (Adv.Funct.Mater.2013 with orderly hole array, 23,2972 2978), the method mainly utilizes the globule of the ordered arrangement that water vapor condensation formed to carry out the preparation of the cellular porous graphene film of implementation rule for template.The size that its shortcoming is the thin film Hole prepared in micron dimension, and can only be difficulty with the preparation of large area film material.Utilize inkjet technology Graphene ink pointwise to be sprayed and can be linked to be certain Graphene figure (Adv.Mater.2011 on substrate, 23,2113 2118) contact scanning on graphene oxide film of high temperature atomic force probe, is utilized can to realize reduced graphene figure (AppliedPhysicsLetters2010 on scanning track, 29,133301) laser, is utilized can to obtain reduced graphene pattern (Adv.Mater. in graphene oxide film surface scan direct write, 2010,22,67).But these methods are all the processing methods of serial; it is difficult to the low cost of patterned graphene thin film, high efficiency, scale manufacture; and the graphene film of preparation is required in certain substrate, it is impossible to realize the preparation of the Flexible graphene conductive film of the patterning of self-supporting.Accordingly, it would be desirable to develop a kind of new manufacture method, it is achieved the low cost of self-supporting graphene conductive film of patterning, high efficiency, scale manufacture.
Summary of the invention
The present invention overcomes preparation patterned Graphene conductive film Problems existing in prior art, it is provided that a kind of surface flexible self-supporting graphene conductive film with micro structured pattern and preparation method thereof.The method preparation is simple, easy to operate, and to equipment, technological requirement simply, raw material availability is high, and cost is low, it may be achieved large-scale industrial production.The self-supporting graphene film pliability of preparation is good, electric conductivity is high, and surface micro-structure pattern is adjustable.
The technical scheme is that a kind of surface has the flexible self-supporting graphene conductive film of micro structured pattern, surface has micro structured pattern, and thickness is 100nm～1mm, and electrical conductivity is 1x104～1x105S/m, it is possible to carry out the bending of 0～180 °；Prepare by the following method: by having filling nitro-cellulose solution in the caster of micro structured pattern on surface, peel off after drying, obtain the NC Nitroncellulose thin film with opposite microstructures as substrate；NC Nitroncellulose substrate is carried out plasma surface treatment, and it is filled in the NC Nitroncellulose substrate with micro structure by graphene oxide solution drying and forming-film, the graphene oxide film obtained is put into heat reduction in hydriodic acid aqueous solution, remove NC Nitroncellulose substrate simultaneously, obtain, with caster, there is the flexible self-supporting graphene conductive film of same microstructure pattern.
Surface described in preparation has the method for the flexible self-supporting graphene conductive film of micro structured pattern, specifically includes following steps:
(1) there is on surface filling nitro-cellulose solution in the caster of micro structured pattern, after drying and forming-film, NC Nitroncellulose is peeled off from caster, obtains the NC Nitroncellulose thin film with opposite microstructures as substrate；
(2) the NC Nitroncellulose substrate with micro structure carrying out plasma surface treatment, and graphene oxide solution is filled into the NC Nitroncellulose substrate processed, vacuum drying obtains graphene oxide film；
(3) graphene oxide film is put in hydriodic acid aqueous solution together with substrate, then airtight when, heating carries out reduction reaction, remove NC Nitroncellulose substrate simultaneously, obtain being suspended in having and the self-supporting grapheme conductive film of caster same microstructure pattern of hydroiodic acid solution surface, clean and dry, get product.
Micro structure on caster is orderly or unordered micro structured pattern, and micro structured pattern horizontal direction physical dimension is 5 μm～1mm, and vertical direction physical dimension is 5 μm～1mm.
The material of caster is inorganic material or organic material.
Described nitro-cellulose solution concentration is 3～12wt%.
Described graphene oxide water solution is according to the Hummers method improved, with graphite for raw material, the graphene oxide water solution prepared, the concentration of described graphene oxide water solution is 0.2～5mg/ml, and wherein said graphene oxide size is in 100nm～5 μm.
In step (1), vacuum drying temperature is 50～100 DEG C, and the time is 2～6h.
Described hydriodic acid aqueous solution concentration is 47～80wt.%.
Step (2) reduction reaction temperature is 50～200 DEG C, time 1～5h, and the mass ratio of hydroiodic acid and graphite oxide film is 5～30:1.
Surface has the application in flexible electronic, Flexible Displays, wearable sensing, energy storage device of the flexible self-supporting graphene conductive film of micro structured pattern.
Beneficial effect:
(1) present invention utilizes the NC Nitroncellulose thin film with micro structured pattern as substrate, removes NC Nitroncellulose thin film, it is achieved have the preparation of the flexible self-supporting grapheme conductive film of micro structured pattern while utilizing hydroiodic acid oxidation graphene film.Simple to operate, experimental procedure is few, not high to equipment, technological requirement, cost is low, it may be achieved large area is produced in batches.
(2) micro structured pattern of grapheme conductive film prepared by the present invention can pass through NC Nitroncellulose substrate, and namely the micro structured pattern of caster controls.By processing the caster of different micro structured pattern, the self-supporting grapheme conductive film with different micro structured pattern that can make.
(3) the big I of grapheme conductive film prepared by the present invention controls by controlling the size of solid substrate, can control the thickness of graphene film by controlling the consumption of graphene oxide, and the thickness of the self-supporting graphene film of preparation is at 100nm～1mm；
(4) the self-supporting graphene film pliability with micro structured pattern good (can realize the bending of graphene film 0～180 degree) prepared, electric conductivity are high, and (electrical conductivity of graphene film is 1x104～1x105S/m), it is expected to for aspects such as flexible electronic, super capacitor, wearable sensings.
Accompanying drawing explanation
The preparation technology flow chart of the flexible self-supporting graphene conductive film of Fig. 1 patterning.
The scanning electron microscope diagram of the flexible self-supporting graphene conductive film of the surface holes array of Fig. 2 embodiment 1 preparation.
The IV curve of the flexible self-supporting graphene conductive film of the surface holes array of Fig. 3 embodiment 1 preparation.
The flexible self-supporting graphene conductive film of the surface holes array of Fig. 4 embodiment 1 preparation bends the photo of 180 degree.
Detailed description of the invention
The feature that the invention is further illustrated by the following examples, but the invention is not limited in following example.According to technology disclosed by the invention, it will be clear to the skilled person that the preparation of the flexible self-supporting graphene film of high connductivity can be realized completely in conjunction with prior art.
A kind of surface has the flexible self-supporting graphene conductive film of micro structured pattern, by having filling nitro-cellulose solution in the caster of micro structured pattern on surface, peels off after drying, obtains the NC Nitroncellulose thin film with opposite microstructures as substrate.NC Nitroncellulose substrate is carried out plasma surface treatment, and it is filled in the NC Nitroncellulose substrate with micro structure by graphene oxide solution drying and forming-film, the graphene oxide film obtained is put into heat reduction in hydriodic acid aqueous solution, remove NC Nitroncellulose substrate simultaneously, obtain, with caster, there is the flexible self-supporting graphene conductive film of same microstructure pattern.Described self-supporting graphene film surface has micro structured pattern, and thickness is 100nm～1mm, and electrical conductivity is 1x104～1x105S/m。
The method of the flexible self-supporting graphene film of the high conductivity that preparation is described, specifically includes following steps:
(1) according to the Hummers method improved, with graphite for raw material, preparation concentration is the graphene oxide water solution of 0.2～5mg/ml, and wherein the size of graphene oxide is in 100nm～5 μm；Preparation concentration is the nitro-cellulose solution of 3～12wt%；
(2) by having filling nitro-cellulose solution in the caster of micro structured pattern on surface, and further at 50～100 degrees Celsius of lower vacuum drying 2～6h, obtain NC Nitroncellulose thin film, NC Nitroncellulose is peeled off from caster, obtains the NC Nitroncellulose thin film with opposite microstructures as substrate.
(3) the NC Nitroncellulose substrate with micro structure is carried out plasma surface treatment, and graphene oxide solution is filled into the NC Nitroncellulose substrate processed, and further at 50～100 degrees Celsius of lower vacuum drying 2～6h, obtain graphene oxide film；
(4) suprabasil graphene oxide film is put in the hydriodic acid aqueous solution that concentration is 47～80wt.%, then airtight when, 50～200 degrees Celsius of oil baths carry out reduction reaction 1～5h, remove NC Nitroncellulose substrate simultaneously, obtain being suspended in having and the self-supporting grapheme conductive film of caster same microstructure pattern of hydroiodic acid solution surface, clean and dry, get product.The mass ratio of hydroiodic acid and graphite oxide film is 5～30:1.
Described caster micro structure can be ordered micro structure pattern, such as array structures such as hole, pillar, striped, tapers, it is also possible to for unordered micro structured pattern such as circuit.Caster micro structured pattern horizontal direction physical dimension is 5 μm～1mm, and vertical direction physical dimension is 5 μm～1mm.
Described caster material is inorganic material or organic material, such as materials such as aluminium oxide, silicon, organosilicon and epoxy resin.
Embodiment 1: the preparation of the flexible self-supporting graphene conductive film of hole array pattern
(1) according to the Hummers method (document ACSNano4 (8): 4806 (2010) improved, Improvedsynthesisofgrapheneoxide), with graphite for raw material, preparation concentration is the graphene oxide water solution of 1.5mg/ml, and wherein the size of graphene oxide is at 100nm～5um；Preparation concentration is the DMF solution of the NC Nitroncellulose of 5wt%
(2) with the silicon chip with hole array pattern, for caster, (its median pore diameter is for 30um, hole depth 30um, pitch of holes 30um), nitro-cellulose solution is filled in caster, and further at 65 degrees Celsius of lower vacuum drying 3h, obtain NC Nitroncellulose thin film；NC Nitroncellulose is peeled off from caster, obtains the NC Nitroncellulose thin film with pillar micro structure as substrate.
(3) the NC Nitroncellulose substrate with micro structure is carried out plasma surface treatment, and graphene oxide solution is uniformly titrated in the NC Nitroncellulose substrate processed, and further at 65 degrees Celsius of lower vacuum drying 3h, obtain graphene oxide film；
(4) suprabasil graphene oxide film is put in the hydriodic acid aqueous solution that concentration is 55wt.%, then airtight when, 100 degrees Celsius of oil baths react 2h, obtain being suspended in hydroiodic acid solution surface and there is the self-supporting grapheme conductive film of sky array pattern.The mass ratio of hydroiodic acid and graphite oxide film is 5:1.
(5) self-supporting graphene film being transferred to pure water soak, rinse, room temperature is dried, and namely prepares surface and has the flexible self-supporting graphene conductive film of hole array pattern.
Embodiment 2: the preparation of the flexible self-supporting graphene film of striped array
(1) according to the Hummers method (document ACSNano4 (8): 4806 (2010) improved, Improvedsynthesisofgrapheneoxide), with graphite for raw material, preparation concentration is the graphene oxide water solution of 3mg/ml, and wherein the size of graphene oxide is at 100nm～5um；Preparation concentration is the DMF solution of the NC Nitroncellulose of 7.5wt%
(2) have with surface the PDMS film of striped array structure for caster (wherein bottom striped wide for 300um, high 100um, spacing 300um), nitro-cellulose solution is filled in caster, and further at 90 degrees Celsius of lower vacuum drying 2.5h, obtain NC Nitroncellulose thin film；NC Nitroncellulose is peeled off from caster, obtains the NC Nitroncellulose thin film with porose array as substrate.
(3) the NC Nitroncellulose substrate with micro structure is carried out plasma surface treatment, and graphene oxide solution is uniformly spun in the NC Nitroncellulose substrate processed, and vacuum drying 2.5h at 80 degrees celsius further, obtain graphene oxide film；
(4) suprabasil graphene oxide film is put in the hydriodic acid aqueous solution that concentration is 65wt.%, then airtight when, 150 degrees Celsius of oil baths react 1.5h, obtain being suspended in hydroiodic acid solution surface and there is the self-supporting grapheme conductive film of striped array pattern.The mass ratio of hydroiodic acid and graphite oxide film is 8:1.
(5) self-supporting graphene film being transferred to pure water soak, rinse, room temperature is dried, and namely prepares surface and has the flexible self-supporting graphene conductive film of striped array pattern.
Claims (10)
1. a surface has the flexible self-supporting graphene conductive film of micro structured pattern, it is characterised in that surface has micro structured pattern, and thickness is 100nm～1mm, and electrical conductivity is 1x104～1x105S/m, it is possible to carry out the bending of 0～180 °；Prepare by the following method: by having filling nitro-cellulose solution in the caster of micro structured pattern on surface, peel off after drying, obtain the NC Nitroncellulose thin film with opposite microstructures as substrate；NC Nitroncellulose substrate is carried out plasma surface treatment, and it is filled in the NC Nitroncellulose substrate with micro structure by graphene oxide solution drying and forming-film, the graphene oxide film obtained is put into heat reduction in hydriodic acid aqueous solution, remove NC Nitroncellulose substrate simultaneously, obtain, with caster, there is the flexible self-supporting graphene conductive film of same microstructure pattern.
2. the method that preparation surface described in claim 1 has the flexible self-supporting graphene conductive film of micro structured pattern, it is characterised in that specifically include following steps:
(1) there is on surface filling nitro-cellulose solution in the caster of micro structured pattern, after drying and forming-film, NC Nitroncellulose is peeled off from caster, obtains the NC Nitroncellulose thin film with opposite microstructures as substrate；
(2) the NC Nitroncellulose substrate with micro structure carrying out plasma surface treatment, and graphene oxide solution is filled into the NC Nitroncellulose substrate processed, vacuum drying obtains graphene oxide film；
(3) graphene oxide film is put in hydriodic acid aqueous solution together with substrate, then airtight when, heating carries out reduction reaction, remove NC Nitroncellulose substrate simultaneously, obtain being suspended in having and the self-supporting grapheme conductive film of caster same microstructure pattern of hydroiodic acid solution surface, clean and dry, get product.
3. the method that preparation surface according to claim 2 has the flexible self-supporting graphene conductive film of micro structured pattern, it is characterized in that, micro structure on caster is orderly or unordered micro structured pattern, micro structured pattern horizontal direction physical dimension is 5 μm～1mm, and vertical direction physical dimension is 5 μm～1mm.
4. the method that preparation surface according to claim 2 has the flexible self-supporting graphene conductive film of micro structured pattern, it is characterised in that the material of caster is inorganic material or organic material.
5. the method that preparation surface according to claim 2 has the flexible self-supporting graphene conductive film of micro structured pattern, it is characterised in that described nitro-cellulose solution concentration is 3～12wt%.
6. the method that preparation surface according to claim 2 has the flexible self-supporting graphene conductive film of micro structured pattern, it is characterized in that, described graphene oxide water solution is according to the Hummers method improved, with graphite for raw material, the graphene oxide water solution prepared, the concentration of described graphene oxide water solution is 0.2～5mg/ml, and wherein said graphene oxide size is in 100nm～5 μm.
7. preparation surface according to claim 2 have micro structured pattern the method for flexible self-supporting graphene conductive film, it is characterised in that in step (1), vacuum drying temperature is 50～100 DEG C, and the time is 2～6h.
8. preparation surface according to claim 2 have micro structured pattern the method for flexible self-supporting graphene conductive film, it is characterised in that described hydriodic acid aqueous solution concentration is 47～80wt.%.
9. preparation surface according to claim 2 have micro structured pattern the method for flexible self-supporting graphene conductive film, it is characterized in that: step (2) reduction reaction temperature is 50～200 DEG C, the mass ratio of time 1～5h, hydroiodic acid and graphite oxide film is 5～30:1.
10. the surface described in claim 1 has the application in flexible electronic, Flexible Displays, wearable sensing, energy storage device of the flexible self-supporting graphene conductive film of micro structured pattern.
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| WO2018076232A1 (en) * | 2016-10-27 | 2018-05-03 | City University Of Hong Kong | System, device and sensor for monitoring circulatory conditions and method for manufacturing the same |
| CN108195491A (en) * | 2017-12-14 | 2018-06-22 | 中国科学院深圳先进技术研究院 | Pliable pressure sensor and preparation method thereof |
| CN108517696A (en) * | 2018-05-14 | 2018-09-11 | 东南大学 | A kind of preparation method of patterned flexible conductive graphene cloth |
| CN109163653A (en) * | 2018-09-10 | 2019-01-08 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of patterned Graphene flexibility strain transducer |
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| CN108517696A (en) * | 2018-05-14 | 2018-09-11 | 东南大学 | A kind of preparation method of patterned flexible conductive graphene cloth |
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| CN111151872A (en) * | 2020-01-16 | 2020-05-15 | 吉林大学 | Method for preparing graphene conformal power supply based on femtosecond laser and application thereof |
| CN113314266A (en) * | 2020-02-26 | 2021-08-27 | 中国科学院长春光学精密机械与物理研究所 | Preparation method of natural bionic pulse net-shaped electrode with high conductivity efficiency |
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