CN104576394B - A kind of large area prints the preparation method of independent carbon nano-tube film transistor - Google Patents
A kind of large area prints the preparation method of independent carbon nano-tube film transistor Download PDFInfo
- Publication number
- CN104576394B CN104576394B CN201310500659.9A CN201310500659A CN104576394B CN 104576394 B CN104576394 B CN 104576394B CN 201310500659 A CN201310500659 A CN 201310500659A CN 104576394 B CN104576394 B CN 104576394B
- Authority
- CN
- China
- Prior art keywords
- prepared
- typography
- cnt
- film transistor
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Thin Film Transistor (AREA)
Abstract
The invention discloses the preparation method that a kind of large area prints independent carbon nano-tube film transistor, including step：（a）One substrate is provided；（b）Prepare gate electrode array on the substrate using typography；（c）Using atomic layer deposition process, spin coating proceeding either typography a dielectric layer is prepared on the gate electrode array；（d1）Source electrode and drain electrode are prepared on the dielectric layer using typography first, a raceway groove is formed between the source electrode and drain electrode, the width of the raceway groove is 10~200 microns；Then CNT active layer is prepared in the raceway groove using typography；Either：（d2）CNT active layer is prepared on the dielectric layer using typography first, the width of the active layer is 10~200 microns；Then source electrode and drain electrode are prepared respectively in the both sides of the active layer.The preparation method technique that the present invention is provided is simple, environment-friendly, easy to operate, with low cost.
Description
Technical field
The present invention relates to a kind of preparation method of thin film transistor (TFT), a kind of big face in nanoelectronic field is more particularly to printed
The preparation method of the independent carbon nano-tube film transistor of product printing, belongs to printing nanoelectronic field.
Background technology
Emerging technology and industrial field that printed electronics are recent five years just to flourish in the world, according to
Scholarly forecast whole world printed electronic product total value in 2017 is up to 330,000,000,000 dollars, thus printed electronics development
By the extensive concern of whole world people, the forward position study hotspot as current multi-crossed disciplines, synthesis.Though printed electronic device
So it is not so good as silicon-based semiconductor microelectronic component in performance, but due to its simple printing manufacture craft and the nothing to base material
Selectivity, make its large area, flexibility, inexpensive electronic device application field have silicon-based semiconductor microelectronics electronic device without
The advantage of method analogy.In order to realize large area, high-volume, low-cost production, printing making is a key technology.Traditional printing
Technology such as silk-screen printing, inkjet printing, roller intaglio printing are being modified and are being applied in the processing of electronic device, these
Technology is once succeeded in developing, and afterwards on the direction of business application, then can be produced on a large scale.However, by the country
The investigation of present Research, it is seen that the research in this domestic field is carried out mainly in terms of organic material in chemical field
, still there is larger gap compared with external in terms of the research of Large area electronics is prepared using printing technology.
In order to build printed electronic component and develop its related application, the development of high-performance novel printed electronic ink
One of technology as printed electronics most critical so that the preparation of printing ink and the exploitation of new technology turn into the modern times
The focus and difficult point in printed electronic field.Semiconductor carbon nanometer tube has many superior performances, with other semi-conducting material phases
Than not only size is small, electric property is excellent, physics and chemical property stability are good, and the electricity such as transistor that CNT is built
Subcomponent has the advantages that caloric value is less and running frequency is higher, while CNT easily realizes solution, separates pure
Semiconductor carbon nanometer tube printing ink after change can construct high performance printed carbon nanotube film transistor device, therefore
Semiconductor carbon nanometer tube is considered as to build one of optimal semi-conducting material of high performance thin film transistor device, and this causes carbon
Nano-tube film transistor device is built and its research in fields such as electronics, biology, medical science, material and environmental monitorings is obtained
The extensive concern of scientists from all over the world, it has also become the focus of current scientific circles' research.In addition, in recent years, the conduct of CNT can
Solution semi-conducting material is because it can realize the preparation of electronic device using printing process and is paid close attention to by industrial circle,
As a rising industry emerging, with huge commercial promise.
The content of the invention
It is an object of the invention to provide a kind of quick, effective, low cost, large area printed carbon nanotube can be constructed thin
The method of film transistor, so as to overcome deficiency of the prior art.
For achieving the above object, present invention employs following technical scheme：
A kind of large area prints the preparation method of independent carbon nano-tube film transistor, including step：
（a）One flexible or rigid substrate is provided；
（b）Prepare gate electrode array on the substrate using typography；
（c）Jie is prepared on the gate electrode array using atomic layer deposition process, spin coating proceeding either typography
Electric layer；
（d1）Source electrode and drain electrode, the source electrode and electric leakage are prepared on the dielectric layer using typography first
A raceway groove is formed between pole, the width of the raceway groove is 10~200 microns；Then using typography or soaking technology described
CNT active layer is prepared in raceway groove；Either：
（d2）CNT active layer, the width of the active layer are prepared on the dielectric layer using typography first
For 10~200 microns；Then source electrode and drain electrode are prepared respectively in the both sides of the active layer；
The large area refers to that the area of the thin film transistor (TFT) array prepared is 400~800cm2。
Preferably, the on-off ratio for the thin film transistor (TFT) that this method is prepared is 104~107, mobility be 0.5~
35cm2/Vs。
Preferably, this method also includes step, the step of carrying out annealing process to the CNT active layer.
Preferably, the typography is silk-screen printing technique, InkJet printing processes, roller gravure printing technique and turned
Move any one in typography.
Preferably, the CNT is single wall semiconductor carbon nanometer tube；The CNT be CoMoCat65,
Any one in CoMoCat76, CG200, HiPCO, P2 and CG100；The caliber scope of the CNT is 0.6~
2nm。
Preferably, the CNT is to be received by the semiconductor carbon that chemically or physically Selective Separation is obtained
Mitron.
Preferably, the flexible substrates are PET or PI, and the rigid basement is glass, silicon chip or quartz.
Preferably, the material of the gate electrode, source electrode and drain electrode is in metal, CNT, ITO and PEDOT
Any one；The metal is any one in gold, silver, copper, nickel, titanium, palladium, aluminium.
Preferably, this method also includes step, and laser sintered or infrared heating technique step is carried out to source metal, drain electrode
Suddenly.
Preferably, the material of the dielectric layer is aluminum oxide, hafnium oxide, silica, titanium oxide/alumina composite material
Material, ion glue dielectric material, barium titanate-PMMA hybrid materials, halogenated graphite-PMMA hybrid materials and electrolyte dielectric material
In any one.
Compared with prior art, a kind of large area proposed by the present invention prints the preparation of independent carbon nano-tube film transistor
Method, active layer, insulating barrier, electrode are made using typography in rigidity or flexible substrates, finally realize the big face of high-performance
The development of product tft array, its preparation method technique is simple, environment-friendly, easy to operate, with low cost, therefore is expected to be applied to
Large-scale commercial production high-performance printable semiconductor carbon nanotube ink and large area print independent CNT crystal
Tube device, the carbon nano tube device prepared is the device that can be worked independently（Do not share gate electrode）, can be directly used for structure
Build phase inverter, oscillator and simple logic circuit etc..It is based particularly on the Large Diameter Pipeline semiconductor carbon nanometer tube that Selective Separation goes out
Printing film transistor show superior electrical property, its mobility and on-off ratio can reach 0.5~35cm respectively2/
Vs and 104~107。
Brief description of the drawings
Fig. 1 is the structural representation for the thin film transistor (TFT) that the embodiment of the present invention is prepared.
Fig. 2 is the electromicroscopic photograph for the single thin film transistor (TFT) that the embodiment of the present invention 1 is prepared.
Fig. 3 is the electric performance test figure of thin film transistor (TFT) as shown in Figure 2.
Fig. 4 is the optical photograph for the large area film transistor array that inventive embodiments 1 are prepared.
Embodiment
As it was previously stated, it is an object of the invention to provide a kind of preparation method of large area carbon nano-tube film transistor,
The structure of its thin film transistor (TFT) prepared is as shown in figure 1, the method comprising the steps of：（a）One flexible or rigid substrate is provided
1；（b）Using typography gate electrode array 2 is prepared in the substrate 1；（c）Using atomic layer deposition process, spin coating proceeding or
Person is that typography prepares a dielectric layer 3 on the gate electrode array 2；（d1）First using typography in the dielectric layer
Source electrode 4 and drain electrode 5 are prepared on 3, a raceway groove is formed between the source electrode 4 and drain electrode 5, the width of the raceway groove is 10
~200 microns；Then CNT active layer 6 is prepared in the raceway groove using typography；Either：（d2）Apply first
Typography prepares CNT active layer 6 on the dielectric layer 3, and the width of the active layer 6 is 10~200 microns；So
Source electrode 4 and drain electrode 5 are prepared respectively in the both sides of the active layer 6 afterwards.It should be noted that the large area in the present invention is
The area for referring to the thin film transistor (TFT) array prepared is 400~800cm2；It is single in the thin film transistor (TFT) array prepared
Only thin film transistor (TFT) can be independent work, i.e., single transistor be the device that can work independently without sharing gate electrode,
It can be directly used for building phase inverter, oscillator and simple logic circuit etc..The present invention provide can quickly, effectively, inexpensive, energy
The method of large area printed carbon nanotube film transistor is constructed, so as to overcome deficiency of the prior art.Below in conjunction with
The present invention will be further described for specific embodiment.
Embodiment 1
Substrate of glass is chosen cleaned clean rear with nitrogen or air blow drying, first using aerosol spray ink print in glass
Large area ITO electrode array is printed in substrate, after drying, in order that ITO electrode is conductive, the ITO electrode of printing is placed in air
In under conditions of 500 DEG C anneal 30 minutes；Then one layer of aluminum oxide is deposited in ITO electrode surface by atomic layer deposition method to be situated between
Electric layer, then a pair of ITO sources, drain electrodes, source electrode and drain electrode are printed above ITO electrode by aerosol inkjet printing methods
Between formed one 200 microns of wide raceway grooves, and by ITO sources, drain electrode be placed in air under conditions of 500 DEG C anneal 30 points
Clock, ultrasonic 5 minutes respectively in ethanol, acetone and pure water successively, drying；Whole substrate of glass is finally immersed in P3DDT-P2
Toluene solution in, soak 6~12 hours, take out electrode, with toluene rinse 2 times, measure electrical property.
The electromicroscopic photograph for the thin film transistor (TFT) that the present embodiment is prepared is as shown in Fig. 2 wherein G is gate electrode, and S is source electricity
Pole, D is drain electrode；Fig. 3 is the electric performance test figure of thin film transistor (TFT) as shown in Figure 2, can be drawn from test chart, this reality
2cm can be reached respectively by applying the mobility and on-off ratio of the thin film transistor (TFT) prepared2/ Vs and 107；Fig. 4 is the present embodiment system
The optical photograph of standby obtained thin film transistor (TFT) array, the area for the thin film transistor (TFT) array that the present embodiment is prepared can reach
To 600cm2Left and right.
Embodiment 2
Choose polymer flexibility substrate such as PI substrates（It is resistant to 280 degree of high temperature）, nitrogen or air blow drying are used after cleaning up,
Large area silver electrode array is printed in PI substrates using aerosol spray ink print first, after drying, in order that silver electrode is conductive,
The silver electrode of printing is placed in air and annealed 30 minutes under conditions of 200 DEG C；Then by atomic layer deposition method in silver-colored electricity
Pole surface deposits one layer of hafnium oxide, then a pair of silver medal sources, drain electrodes are printed above silver electrode by aerosol inkjet printing methods,
One 150 microns of wide raceway grooves are formed between source electrode and drain electrode, and silver-colored source, drain electrode are placed in air in 200 DEG C of bar
Annealed 30 minutes under part；Finally whole flexible PI substrates are immersed in PFO-CG200 toluene solution, soaked 6~12 hours,
Electrode is taken out, with toluene rinse 2 times, electrical property is measured.The mobility and on-off ratio for the thin film transistor (TFT) that this implementation is prepared
3cm can be reached respectively2/ Vs and 106；The area for the thin film transistor (TFT) array that the present embodiment is prepared can reach 800cm2
Left and right.
Embodiment 3
Polymer flexibility substrate such as PET base is chosen, nitrogen or air blow drying are used after cleaning up, transfer side is applied first
Method aerosol spray ink print prints large area silver electrode array on the pet substrate, after drying, in order that silver electrode is conductive, will print
The silver electrode of system is placed in air anneals 30 minutes under conditions of 200 DEG C；Then by atomic layer deposition method in silver electrode table
Face deposits one layer of aluminum oxide, then a pair of silver medal sources, drain electrodes, source electricity are printed above silver electrode by aerosol inkjet printing methods
One 100 microns of wide raceway grooves are formed between pole and drain electrode, and silver-colored source, drain electrode are placed in air under conditions of 200 DEG C
Annealing 30 minutes；Finally whole sheet glass is immersed in F8T2-P2 meta-xylene solution, soaked 6~12 hours, electricity is taken out
Pole, is rinsed 2 times with meta-xylene, measures electrical property.The mobility for the thin film transistor (TFT) that this implementation is prepared and switch score
0.5cm can not reached2/ Vs and 104；The area for the thin film transistor (TFT) array that the present embodiment is prepared can reach 700cm2
Left and right.
Embodiment 4
Substrate of glass is chosen cleaned clean rear with nitrogen or air blow drying, by aerosol spray ink print in glass basis
Upper printing large area ITO electrode array, after drying, in order that ITO electrode is conductive, the ITO electrode of printing is placed in air
Annealed 30 minutes under conditions of 500 DEG C；Then one layer of aluminum oxide dielectric is deposited in ITO electrode surface by atomic layer deposition method
Layer, then 5~10 semiconductor carbon nanometer tubes are printed in aluminum oxide dielectric layer by inkjet printing methods, form width micro- for 50
The active layer of rice, is rinsed well with water, is dried up；Printed a pair in the both sides of active layer finally by aerosol inkjet printing methods
ITO sources, drain electrode, and ITO sources, drain electrode are placed in air annealing 30 minutes under conditions of 500 DEG C, in ethanol, acetone
With ultrasound 5 minutes, drying respectively in pure water, electrical property is measured.The mobility for the thin film transistor (TFT) that this implementation is prepared and open
12cm can be reached respectively by closing ratio2/ Vs and 106；The area for the thin film transistor (TFT) array that the present embodiment is prepared can reach
500cm2Left and right.
Embodiment 5
Choose polymer flexibility substrate such as PI substrates（It is resistant to 280 degree of high temperature）, nitrogen or air blow drying are used after cleaning up,
Large area gold electrode array is printed in PI substrates using aerosol spray ink print first, after drying, in order that gold electrode is conductive,
The gold electrode of printing is solidified into conductive gold ink using laser sintering process moment, is allowed to conductive；Then beaten in gold electrode surfaces
The sub- glue material dielectric layer of a leafing is printed, then a pair of Jin Yuan, electric leakages are printed above silver electrode by aerosol inkjet printing methods
Pole, forms one 10 microns of wide raceway grooves, and Jin Yuan, drain electrode are carried out using laser sintering process between source electrode and drain electrode
Processing；Then 5~10 semiconductor carbon nanometer tubes are printed in source, drain electrode raceway groove by inkjet printing methods, is rinsed with water
Totally, dry up, measure electrical property.The mobility and on-off ratio for the thin film transistor (TFT) that this implementation is prepared can be reached respectively
23cm2/ Vs and 105；The area for the thin film transistor (TFT) array that the present embodiment is prepared can reach 400cm2Left and right.
Embodiment 6
Polymer flexibility substrate such as PET base is chosen, nitrogen or air blow drying are used after cleaning up, transfer side is applied first
Method aerosol spray ink print prints larger areas of copper electrod-array on the pet substrate, after drying, in order that copper electrode is conductive, will print
The copper electrode of system is placed in air anneals 30 minutes under conditions of 200 DEG C；Then in one layer of electrolyte of copper electrode printout surface
Dielectric material dielectric layer, then a pair of bronze medal sources, drain electrodes, source electrode are printed above silver electrode by aerosol inkjet printing methods
One 150 microns of wide raceway grooves are formed between drain electrode, and copper source, drain electrode are handled using infrared heating technique；So
5~10 semiconductor carbon nanometer tubes are printed in source, drain electrode raceway groove by aerosol inkjet printing methods afterwards, rinse dry with water
Only, dry up, measure electrical property.The mobility and on-off ratio for the thin film transistor (TFT) that this implementation is prepared can be reached respectively
19cm2/ Vs and 105；The area for the thin film transistor (TFT) array that the present embodiment is prepared can reach 600cm2Left and right.
In the present embodiment, the material electrolyte dielectric material of dielectric layer is used into barium titanate-PMMA hybrid materials or halogen
Graphite-PMMA hybrid materials are replaced, and can reach identical effect.
Embodiment 7
Substrate of glass is chosen cleaned clean rear with nitrogen or air blow drying, first by aerosol spray ink print in glass
Large area ITO electrode array is printed on matrix, after drying, in order that ITO electrode is conductive, the ITO electrode of printing is placed in air
In under conditions of 500 DEG C anneal 30 minutes；Then layer of titanium dioxide is deposited in ITO electrode surface by spin coating method,
Made annealing treatment 5 minutes under conditions of 200 DEG C, then one layer of aluminum oxide of spin coating, made annealing treatment 5 minutes under conditions of 200 DEG C, then lead to
Cross aerosol inkjet printing methods and a pair of ITO sources, drain electrodes are printed above ITO electrode, formed between source electrode and drain electrode
One 100 microns of wide raceway grooves, and by ITO sources, drain electrode be placed in air under conditions of 500 DEG C anneal 30 minutes, ethanol,
Ultrasound 5 minutes, drying respectively in acetone and pure water, then the drop coating PFO-DBT-P2 solution between the raceway groove, uses tetrahydrofuran
Rinse 2 times, drying measures electrical property.The mobility and on-off ratio for the thin film transistor (TFT) that this implementation is prepared can be arrived respectively
Up to 35cm2/ Vs and 106；The area for the thin film transistor (TFT) array that the present embodiment is prepared can reach 500cm2Left and right.
It should be noted that in thin film transistor (TFT) prepared by above-described embodiment, material used in each structure sheaf, only
It is to be illustrated as specific example.In the present invention, the substrate can be selected as PET, PI, glass, silicon chip or quartz；Institute
State the material of gate electrode, source electrode and drain electrode and can select for gold, silver, copper, nickel, titanium, palladium, aluminium, CNT, ITO and
Any one in PEDOT；The material of the dielectric layer can be selected as aluminum oxide, hafnium oxide, silica, titanium oxide/oxygen
Change aluminium composite material, ion glue dielectric material, barium titanate-PMMA hybrid materials, halogenated graphite-PMMA hybrid materials and electrolysis
Any one in matter dielectric material；The CNT can select for CoMoCat65, CoMoCat76, CG200, HiPCO,
Any one in P2 and CG100.
In summary, compared with prior art, a kind of large area proposed by the present invention prints independent carbon nano-tube film crystalline substance
The preparation method of body pipe, active layer, insulating barrier, electrode are made using typography in rigidity or flexible substrates, final to realize
The development of high-performance large area tft array, its preparation method technique is simple, environment-friendly, easy to operate, with low cost, therefore
It is expected to be applied to large-scale commercial production high-performance printable semiconductor carbon nanotube ink and large area prints independent carbon
Nanotube crystal tube device；In the transistor array, the spaced independence of each grid, and directly in the upper of the grid
It is the device that can be worked independently that side, which prepares source, drain electrode, therefore the carbon nanometer transistor prepared, can be directly used for structure
Build phase inverter, oscillator and simple logic circuit etc..It is based particularly on the Large Diameter Pipeline semiconductor carbon nanometer tube that Selective Separation goes out
Printing film transistor show superior electrical property, its mobility and on-off ratio can reach 35cm respectively2/ Vs and
107。
Described above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (6)
1. a kind of large area prints the preparation method of independent carbon nano-tube film transistor, it is characterised in that including step：
(a) a flexible or rigid substrate is provided；
(b) gate electrode array is prepared on the substrate using typography；
(c) dielectric layer is prepared on the gate electrode array using atomic layer deposition process, spin coating proceeding either typography；
(d1) source electrode and drain electrode are prepared using typography on the dielectric layer first, the source electrode and drain electrode it
Between form a raceway groove, the width of the raceway groove is 10~200 microns；Then using typography or soaking technology in the raceway groove
In prepare CNT active layer；Either：
(d2) CNT active layer is prepared on the dielectric layer using typography first, the width of the active layer is 10
~200 microns；Then source electrode and drain electrode are prepared respectively in the both sides of the active layer；
The large area refers to that the area of the thin film transistor (TFT) array prepared is 400~800cm2；
Wherein, this method also include to the CNT active layer carry out annealing process the step of, the annealing process be
Carried out in air and under conditions of temperature is 200 DEG C~500 DEG C；
Wherein, this method also include source metal, drain electrode are annealed, laser sintered or infrared heating processing step；
Wherein, the typography is silk-screen printing technique, InkJet printing processes, roller gravure printing technique and trans-printing
Any one in technique；
Wherein, the on-off ratio for the thin film transistor (TFT) that this method is prepared is 104~107, mobility is 0.5~35cm2/Vs。
2. preparation method according to claim 1, it is characterised in that the CNT is single wall semiconductor carbon nanometer
Pipe；The CNT is any one in CoMoCat 65, CoMoCat76, CG200, HiPCO, P2 and CG100；It is described
The caliber scope of the CNT is 0.6~2nm.
3. preparation method according to claim 2, it is characterised in that the CNT is to pass through chemical method or physics
The isolated semiconductor carbon nanometer tube of method choice.
4. preparation method according to claim 1, it is characterised in that the flexible substrates are PET or PI, the rigid base
Bottom is glass, silicon chip or quartz.
5. preparation method according to claim 1, it is characterised in that the material of the gate electrode, source electrode and drain electrode
For any one in metal, CNT, ITO and PEDOT；The metal is times in gold, silver, copper, nickel, titanium, palladium, aluminium
Meaning is a kind of.
6. preparation method according to claim 1, it is characterised in that the material of the dielectric layer be aluminum oxide, hafnium oxide,
Silica, titanium oxide/alumina composite material, ion glue dielectric material, barium titanate-PMMA hybrid materials, halogenated graphite-
Any one in PMMA hybrid materials and electrolyte dielectric material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310500659.9A CN104576394B (en) | 2013-10-22 | 2013-10-22 | A kind of large area prints the preparation method of independent carbon nano-tube film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310500659.9A CN104576394B (en) | 2013-10-22 | 2013-10-22 | A kind of large area prints the preparation method of independent carbon nano-tube film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104576394A CN104576394A (en) | 2015-04-29 |
| CN104576394B true CN104576394B (en) | 2017-08-08 |
Family
ID=53092155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310500659.9A Active CN104576394B (en) | 2013-10-22 | 2013-10-22 | A kind of large area prints the preparation method of independent carbon nano-tube film transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576394B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108023016B (en) * | 2016-10-31 | 2020-07-10 | 清华大学 | Preparation method of thin film transistor |
| CN106654013B (en) * | 2016-12-22 | 2019-01-15 | 华中科技大学 | A kind of preparation method and applications of the fine mask plate of thin film transistor (TFT) |
| CN108417714A (en) * | 2017-05-03 | 2018-08-17 | 上海幂方电子科技有限公司 | A method of preparing carbon nanotube field-effect transistor |
| US10777662B2 (en) | 2017-11-22 | 2020-09-15 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Thin film transistor and manufacturing method thereof |
| CN107946189B (en) * | 2017-11-22 | 2020-07-31 | 深圳市华星光电半导体显示技术有限公司 | Thin film transistor and preparation method thereof |
| CN109030564B (en) * | 2018-06-04 | 2021-05-11 | 深圳大学 | Transistor type formaldehyde sensor and manufacturing method thereof |
| CN108831904B (en) * | 2018-06-22 | 2021-06-22 | 福州大学 | Organic thin film transistor array with vertical structure and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101091266A (en) * | 2004-08-27 | 2007-12-19 | 杜邦公司 | Semiconductive percolating networks |
| WO2007089322A2 (en) * | 2005-11-23 | 2007-08-09 | William Marsh Rice University | PREPARATION OF THIN FILM TRANSISTORS (TFTs) OR RADIO FREQUENCY IDENTIFICATION (RFID) TAGS OR OTHER PRINTABLE ELECTRONICS USING INK-JET PRINTER AND CARBON NANOTUBE INKS |
| CN102723276A (en) * | 2012-04-06 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of printed flexible carbon nanotubes thin film transistor |
-
2013
- 2013-10-22 CN CN201310500659.9A patent/CN104576394B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576394A (en) | 2015-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104576394B (en) | A kind of large area prints the preparation method of independent carbon nano-tube film transistor | |
| Wang et al. | Based inkjet-printed flexible electronic circuits | |
| Park et al. | Fully laser-patterned stretchable microsupercapacitors integrated with soft electronic circuit components | |
| Fukaya et al. | One-step sub-10 μm patterning of carbon-nanotube thin films for transparent conductor applications | |
| Sui et al. | Flexible and transparent electrothermal film heaters based on graphene materials | |
| Cao et al. | Effect of graphene-EC on Ag NW-based transparent film heaters: optimizing the stability and heat dispersion of films | |
| CN103296991B (en) | Graphene high frequency based on flexible base board receives electromechanical resonator and preparation technology thereof | |
| CN105883781B (en) | A kind of preparation method of large area redox graphene film | |
| Xiao et al. | Interconnected graphene networks with uniform geometry for flexible conductors | |
| JP2017524636A (en) | Method for the production and transfer of graphene | |
| TWI544645B (en) | Thin film transistor and method of making the same | |
| Chandrashekar et al. | A universal stamping method of graphene transfer for conducting flexible and transparent polymers | |
| Sun et al. | All‐carbon thin‐film transistors as a step towards flexible and transparent electronics | |
| Xie et al. | A high-response transparent heater based on a CuS nanosheet film with superior mechanical flexibility and chemical stability | |
| US20100024877A1 (en) | Method of preparing a porous semiconductor film on a substrate | |
| Qiao et al. | Graphene devices based on laser scribing technology | |
| CN104505147B (en) | The preparation method of graphene nano wall flexible conductive film | |
| CN106941130A (en) | Flexible field-effect transistor and preparation method thereof | |
| CN108490043B (en) | Gas sensor and preparation method thereof | |
| Chen et al. | Nano‐engineered materials for transparent supercapacitors | |
| Djuric et al. | Miniature graphene-based supercapacitors fabricated by laser ablation | |
| Zhou et al. | Fabrication of electronics by electrohydrodynamic jet printing | |
| Deepak et al. | Optimizing the efficiency of triboelectric nanogenerators by surface nanoarchitectonics of graphene-based electrodes: A review | |
| Liu et al. | MXene-reduced graphene oxide sponge-based solar evaporators with integrated water-thermal management by anisotropic design | |
| Guo et al. | Large-area metal–semiconductor heterojunctions realized via MXene-induced two-dimensional surface polarization |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |