CN114628156A - Preparation method of flexible planar micro energy storage device - Google Patents
Preparation method of flexible planar micro energy storage device Download PDFInfo
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- CN114628156A CN114628156A CN202011459967.8A CN202011459967A CN114628156A CN 114628156 A CN114628156 A CN 114628156A CN 202011459967 A CN202011459967 A CN 202011459967A CN 114628156 A CN114628156 A CN 114628156A
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- 238000004146 energy storage Methods 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000005520 cutting process Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229920000642 polymer Polymers 0.000 claims abstract description 20
- 238000003825 pressing Methods 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 16
- 239000003792 electrolyte Substances 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 42
- 239000010408 film Substances 0.000 claims description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 28
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 17
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000004049 embossing Methods 0.000 claims description 11
- 239000011888 foil Substances 0.000 claims description 10
- -1 polytetrafluoroethylene Polymers 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 238000005096 rolling process Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000000178 monomer Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000003575 carbonaceous material Substances 0.000 claims description 2
- 239000011530 conductive current collector Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000002608 ionic liquid Substances 0.000 claims description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 claims description 2
- 150000004692 metal hydroxides Chemical class 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 239000004753 textile Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 8
- 239000003990 capacitor Substances 0.000 abstract description 3
- 229910021389 graphene Inorganic materials 0.000 description 19
- 239000002002 slurry Substances 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 229910002588 FeOOH Inorganic materials 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002135 nanosheet Substances 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 description 1
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Secondary Cells (AREA)
Abstract
The invention belongs to the technical field of miniature capacitor preparation, and discloses a preparation method of a flexible planar miniature energy storage device, which comprises the following steps: preparing an electrode film; placing the electrode film in a pressing and cutting die, and applying pressure to obtain a patterned electrode; placing the patterned electrode on a planar substrate, coating gel polymer on the surface of the patterned electrode, and then carrying out curing treatment; removing the cured gel polymer from the substrate, the patterned electrode being attached to the gel polymer; dropwise adding electrolyte on the gel polymer to obtain a flexible planar micro energy storage device; in conclusion, the preparation method greatly reduces the processing cost and improves the processing efficiency, so that the micro energy storage device with a specific geometric configuration and size can be rapidly prepared in large batch, and the micro energy storage device can be widely applied to the fields of micro-nano devices such as micro-electro-mechanical systems, micro-robots, implanted medical equipment and the like.
Description
Technical Field
The invention belongs to the technical field of miniature capacitor preparation, and particularly relates to a preparation method of a flexible planar miniature energy storage device.
Background
The rapid development of miniaturized electronic devices (e.g., micro-electromechanical systems, micro-robots, micro-implantable medical devices) has greatly stimulated an urgent need for micro power sources. The micro energy storage device has higher power density, energy density and excellent cycle performance, and is gradually a new type of chip energy storage device.
At present, the research and development of micro energy storage devices have made great progress by researching electrode materials, screening matched electrolytes and optimizing the preparation process of electrode films. However, while improving the electrochemical performance of the micro energy storage device and simplifying the micro-configuration processing technology, the low-cost and large-scale production of the micro energy storage device is still difficult to realize. The processing method of the microelectrode comprises the traditional photoetching method, the laser etching method, the electrochemical deposition and the plasma etching, and the methods have the disadvantages of complex preparation process, long time consumption, high equipment requirement and high cost, thereby seriously hindering the micro energy storage device from being widely applied in practice.
In conclusion, the search for a macro preparation technology of the micro energy storage device with low cost, high efficiency and easy operation has important strategic significance for the practical application of the micro energy storage device.
Disclosure of Invention
In view of the above, in order to solve the problems in the background art, the present invention provides a method for manufacturing a flexible planar micro energy storage device.
In order to achieve the purpose, the invention provides the following technical scheme: a preparation method of a flexible planar micro energy storage device comprises the following steps:
s1, preparing an electrode film;
s2, placing the electrode film in a press-cutting die, and applying pressure to obtain a patterned electrode;
s3, placing the patterned electrode on a planar substrate, coating a gel polymer on the surface of the patterned electrode, and then carrying out curing treatment;
s4, removing the cured gel polymer from the substrate, and attaching the patterned electrode to the gel polymer; and dropwise adding electrolyte on the gel polymer to obtain the flexible planar micro energy storage device.
Preferably, in the step S1, the press-cutting mold adopts a common hollow-out embossing device and a rolling type press-cutting mold; the press cutting pattern of the press cutting die is one or more of interdigital type, parallel linear type, concentric circle and parallel broken linear type; the press-cutting pattern is an integrated pattern formed by one monomer pattern or a plurality of monomer patterns; the size of the press cutting pattern of the press cutting die is 1 mu m-10 cm.
Preferably, in the step S1; when the electrode film is prepared, the method specifically comprises the following steps: preparing the electrode film by adopting a rolling method, a filtering method, a spin-coating method, a spraying method, a blade coating method, a printing method or a pressing method; the electrode film is prepared from a metal current collector, a self-supporting electrode film material or an electrode film material attached to a conductive current collector, and the thickness of the electrode film is 10nm-1 mm;
further, the metal current collector is gold, nickel, copper, stainless steel, titanium, aluminum foil or carbon-coated aluminum foil.
Further, the electrode thin film material includes a carbon material, a metal oxide, a metal hydroxide, a polymer, and MXene.
Preferably, in the step S2, the patterned electrode is a current collector, a single electrode, a single device or an integrated device, and the integrated device is formed by combining a plurality of single devices in series or in parallel.
Preferably, in step S2, after obtaining the patterned electrode and before placing the patterned electrode on the planar substrate, the method further includes: subjecting the patterned electrode to a reduction treatment, an electrochemical deposition treatment or a chemical vapor deposition treatment.
Preferably, in the step S3, the planar substrate is a silicon wafer, a quartz glass, an organic glass, a metal foil, a teflon plate, a polyethylene terephthalate film, a paper or a textile.
Preferably, in the step S3, the gel polymer is polydimethylsiloxane, polymethyl methacrylate or polyvinyl alcohol.
Preferably, in step S4, the electrolyte is a solid-state aqueous electrolyte or an ionic liquid electrolyte.
Compared with the prior art, the invention has the following beneficial effects:
in the invention, the flexible planar micro energy storage device is prepared by using the press-cutting die, so that symmetrical, asymmetrical and integrated devices can be simply and quickly prepared, and the flexible planar micro energy storage device is suitable for all materials capable of being prepared into films and has universality.
In addition, the invention breaks through the limitations of long time consumption, difficult process control and complex flow of the traditional photoetching process, electrodeposition process and the like, greatly reduces the processing cost and improves the processing efficiency, thereby being capable of rapidly preparing the micro energy storage device with specific geometric configuration and size in large batch, being further widely applied to the field of micro-nano devices such as micro-electromechanical systems, micro-robots, implanted medical equipment and the like, and laying a foundation for the development of micro-nano electronic equipment.
Drawings
FIG. 1 is a flow chart of a method of making one or more embodiments of the present invention;
FIG. 2 is a schematic view of an embossing pattern used in one embodiment of the present invention;
FIG. 3 is a flow chart of a second embodiment of the method of the present invention;
FIG. 4 is a schematic view of an embossing pattern used in the second or third embodiment of the present invention;
FIG. 5 is a flow chart of a third preparation method of the present invention.
Fig. 6 is a schematic view of an embossing pattern used in the fourth embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a preparation method of a flexible planar micro energy storage device, which specifically comprises the following steps:
s1, preparing an electrode film;
s2, placing the electrode film in a press-cutting die, and applying pressure to obtain a patterned electrode;
s3, placing the patterned electrode on a planar substrate, coating a gel polymer on the surface of the patterned electrode, and then carrying out curing treatment;
s4, removing the cured gel polymer from the substrate, and attaching the patterned electrode to the gel polymer; and (3) dropwise adding electrolyte on the gel polymer to obtain the flexible planar micro energy storage device.
In the embodiment of the present invention, the micro energy storage device may be a micro capacitor, or a micro battery, as long as it is a device capable of storing electric quantity, and the specific form of the energy storage device is not limited in the present invention.
Aiming at the preparation method of the micro energy storage device, the operation is simple, the symmetrical, asymmetrical and integrated devices can be simply and rapidly prepared, and the method is suitable for all materials which can be prepared into films and has good universality. In addition, the method breaks through the limitations of long time consumption, difficult process control and complex flow of the traditional photoetching process, electro-deposition process and the like, greatly reduces the processing cost and improves the processing efficiency, thereby being capable of rapidly preparing the micro energy storage device with a specific geometric configuration and size in batch.
Example one
In this embodiment, a method for manufacturing a flexible planar micro energy storage device is provided, specifically, a flexible planar symmetric micro energy storage device is manufactured; referring to fig. 1, the preparation method comprises:
s11, selecting graphene oxide as an electrode film material, carrying out freeze drying and thermal reduction treatment on the graphene oxide, and then preparing the graphene oxide into a self-supporting electrode film with the thickness of 100 microns by using a roller type tablet press; adopting a common hollow embossing device as a press-cutting die, and customizing two parallel lines as shown in figure 2 as press-cutting patterns;
s12, placing an electrode film made of graphene oxide in a pressure cutting die, and applying pressure to obtain two parallel linear patterned graphene electrodes; specifically, in fig. 2, a denotes an embosser, b denotes a self-supporting electrode thin film, and c denotes a patterned graphene electrode;
s13, placing the patterned graphene electrode on a flat quartz glass substrate, coating transparent colloidal polyvinyl alcohol polymer on the patterned graphene electrode, and then drying and solidifying;
s14, removing the cured transparent polyvinyl alcohol from the quartz glass substrate, attaching the patterned graphene electrode to the transparent polyvinyl alcohol, and then dropwise adding polyvinyl alcohol/sulfuric acid electrolyte into the transparent polyvinyl alcohol to obtain the flexible planar graphene-based symmetrical micro energy storage device.
Example two
In this embodiment, a method for manufacturing a flexible planar micro energy storage device is provided, specifically, a flexible planar asymmetric micro energy storage device is manufactured; referring to fig. 3, the preparation method comprises:
s21, mixing a graphene material with a polytetrafluoroethylene binder to prepare first slurry, coating the first slurry on a carbon-coated aluminum foil through a blade coating method, and preparing a first electrode film with the thickness of 100 microns; mixing the manganese oxide nanosheets with a polytetrafluoroethylene binder to prepare second slurry, and coating the second slurry on a carbon-coated aluminum foil through a blade coating method to prepare a second electrode film with the thickness of 50 microns; adopting a common hollow embossing device as a press-cutting die, and customizing an asymmetric press-cutting pattern shown in figure 4;
s22, placing a first electrode film prepared from a graphene material in a pressing and cutting die, and applying pressure to obtain a first patterned electrode; placing a second electrode film prepared by manganese oxide nanosheets into a press-cutting die, and applying pressure to obtain a second patterned electrode;
s23, placing the first patterned electrode and the second patterned electrode on a polytetrafluoroethylene plate substrate, wherein the specific material layer faces the substrate, and one side of the carbon-coated aluminum foil faces upwards; coating transparent colloidal polymethyl methacrylate polymer on the patterned electrode, and then drying and solidifying;
s24, removing the cured transparent polymethyl methacrylate from the polytetrafluoroethylene plate substrate, enabling the first patterned electrode and the second patterned electrode to be attached to the transparent polymethyl methacrylate, and then dropwise adding polyvinyl alcohol/sulfuric acid electrolyte into the transparent polymethyl methacrylate to obtain the flexible planar asymmetric miniature energy storage device.
EXAMPLE III
The embodiment provides a method for manufacturing a flexible planar micro energy storage device, and particularly provides a method for manufacturing a flexible planar metal current collector-based asymmetric micro energy storage device; referring to fig. 5, the preparation method includes:
s31, pressing the foamed nickel into a metal current collector (electrode film) with the thickness of 200 mu m by using a pressing method; adopting a common hollow embossing device as a press-cutting die, and customizing an asymmetric press-cutting pattern shown in figure 4;
s32, placing the foamed nickel electrode film in a pressing and cutting die, and applying pressure to obtain a current collector; and repeating the sub-pressing cutting for multiple times to obtain at least two current collectors. Processing one of the foamed nickel current collectors by electrochemical deposition to prepare FeOOH, and taking the FeOOH as a patterned negative electrode; growing a carbon nano tube by using another foam nickel current collector as a template through chemical vapor deposition treatment, and using the carbon nano tube as a patterned positive electrode;
s33, placing the patterned negative electrode and the patterned positive electrode on an organic glass substrate, coating a polyvinyl alcohol polymer on the patterned electrode, and then drying and solidifying;
s34, removing the solidified polyvinyl alcohol from the organic glass substrate, attaching the patterned negative electrode (FeOOH negative electrode) and the patterned positive electrode (carbon nano tube positive electrode) to the polyvinyl alcohol, and then dropwise adding polyvinyl alcohol/potassium hydroxide electrolyte into the polyvinyl alcohol to obtain the metal current collector-based asymmetric micro energy storage device with the flexible plane.
Example four
In this embodiment, a method for manufacturing a flexible planar micro energy storage device is provided, specifically, a flexible planar integrated symmetrical micro energy storage device is manufactured; referring to fig. 1, the preparation method comprises:
s41, mixing a graphene material with a polytetrafluoroethylene binder to prepare slurry, and coating the slurry on a carbon-coated aluminum foil by a blade coating method to prepare an electrode film with the thickness of 100 mu m, the length of 1m and the width of 10 cm; a rolling type embossing device is adopted as an embossing die, and a symmetrical embossing pattern shown in figure 6 is customized;
s42, putting the graphene electrode film into a rolling type press-cutting die from one side, applying pressure, continuously rolling while keeping the graphene electrode film continuously entering, and preparing an integrated pattern formed by connecting a plurality of monomer patterns in series to obtain a patterned graphene electrode with a specific integrated pattern;
s43, placing the patterned graphene electrode with the specific integrated pattern on an organic glass substrate, coating a polyvinyl alcohol polymer on the patterned graphene electrode, and then drying and solidifying;
s44, taking off the solidified polyvinyl alcohol from the organic glass substrate, attaching the patterned graphene electrode with the specific integrated pattern to the polyvinyl alcohol, and then dropwise adding the silicon dioxide/LiTFSI electrolyte into the polyvinyl alcohol to obtain the flexible plane integrated symmetrical micro energy storage device.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A preparation method of a flexible planar micro energy storage device is characterized by comprising the following steps:
s1, preparing an electrode film;
s2, placing the electrode film in a press-cutting die, and applying pressure to obtain a patterned electrode;
s3, placing the patterned electrode on a planar substrate, coating a gel polymer on the surface of the patterned electrode, and then carrying out curing treatment;
s4, removing the cured gel polymer from the substrate, and attaching the patterned electrode to the gel polymer; and dropwise adding electrolyte on the gel polymer to obtain the flexible planar micro energy storage device.
2. The method of claim 1, wherein the method comprises the steps of: the press-cutting die adopts a common hollow embossing device and a rolling type press-cutting die; the press cutting pattern of the press cutting die is one or more of interdigital type, parallel linear type, concentric circle and parallel broken linear type; the pressing and cutting pattern is an integrated pattern formed by one single pattern or a plurality of single patterns.
3. A method of manufacturing a flexible planar micro energy storage device according to claim 1 or 2, characterized in that: the size of the press cutting pattern of the press cutting die is 1 mu m-10 cm.
4. The method of claim 1, wherein the method comprises the steps of: the electrode film is prepared from a metal current collector, a self-supporting electrode film material or an electrode film material attached to a conductive current collector, and the thickness of the electrode film is 10nm-1 mm.
5. The method of claim 4, wherein the method comprises the steps of: the metal current collector is gold, nickel, copper, stainless steel, titanium, aluminum foil or carbon-coated aluminum foil.
6. The method of claim 4, wherein the method comprises the steps of: the electrode thin film material includes a carbon material, a metal oxide, a metal hydroxide, a polymer, and MXene.
7. The method of claim 1, wherein the method comprises the steps of: when the electrode film is prepared, the method specifically comprises the following steps:
the electrode film is prepared by adopting a rolling method, a filtering method, a spin-coating method, a spraying method, a blade coating method, a printing method or a pressing method.
8. The method of claim 1, wherein the method comprises the steps of: the patterned electrode is a current collector, a monomer electrode, a monomer device or an integrated device, and the integrated device is formed by combining a plurality of monomer devices in series or in parallel.
9. A method of manufacturing a flexible planar micro energy storage device according to claim 1 or 8, characterized in that: after obtaining the patterned electrode, before placing the patterned electrode on the planar substrate, the method further comprises:
subjecting the patterned electrode to a reduction treatment, an electrochemical deposition treatment or a chemical vapor deposition treatment.
10. The method of claim 1, wherein the method comprises the steps of:
the planar substrate is a silicon wafer, quartz glass, organic glass, a metal foil, a polytetrafluoroethylene plate, a polyethylene terephthalate film, paper or a textile;
the gel polymer is polydimethylsiloxane, polymethyl methacrylate or polyvinyl alcohol; the electrolyte is a solid water system electrolyte or an ionic liquid electrolyte.
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|---|---|---|---|---|
| TW201123513A (en) * | 2009-12-31 | 2011-07-01 | Nat Univ Tsing Hua | Method for preparing patterned metal oxide layer or patterned metal layer by using solution type precursor or sol-gel precursor |
| KR101502080B1 (en) * | 2014-04-30 | 2015-03-12 | 한국기계연구원 | Method for producing a stretchable electrode structure for energy storage device, an electrode structure produced by the method and an energy storage device having the electrode structure |
| CN104835729A (en) * | 2015-04-03 | 2015-08-12 | 西安交通大学 | Template thermal field induction forming method for flexibly reducing grapheme patterned electrode |
| CN109216035A (en) * | 2017-12-12 | 2019-01-15 | 中国科学院大连化学物理研究所 | A kind of all solid state plane asymmetric miniature ultracapacitor device and preparation method thereof |
| CN111934030A (en) * | 2020-07-25 | 2020-11-13 | 浙江理工大学 | Flexible planar micro energy storage device and preparation method thereof |
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- 2020-12-11 CN CN202011459967.8A patent/CN114628156A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201123513A (en) * | 2009-12-31 | 2011-07-01 | Nat Univ Tsing Hua | Method for preparing patterned metal oxide layer or patterned metal layer by using solution type precursor or sol-gel precursor |
| KR101502080B1 (en) * | 2014-04-30 | 2015-03-12 | 한국기계연구원 | Method for producing a stretchable electrode structure for energy storage device, an electrode structure produced by the method and an energy storage device having the electrode structure |
| CN104835729A (en) * | 2015-04-03 | 2015-08-12 | 西安交通大学 | Template thermal field induction forming method for flexibly reducing grapheme patterned electrode |
| CN109216035A (en) * | 2017-12-12 | 2019-01-15 | 中国科学院大连化学物理研究所 | A kind of all solid state plane asymmetric miniature ultracapacitor device and preparation method thereof |
| CN111934030A (en) * | 2020-07-25 | 2020-11-13 | 浙江理工大学 | Flexible planar micro energy storage device and preparation method thereof |
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