CN108074752A - A kind of method that photoreduction met hod prepares graphene-based planarization micro super capacitor - Google Patents
A kind of method that photoreduction met hod prepares graphene-based planarization micro super capacitor Download PDFInfo
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- CN108074752A CN108074752A CN201611039386.2A CN201611039386A CN108074752A CN 108074752 A CN108074752 A CN 108074752A CN 201611039386 A CN201611039386 A CN 201611039386A CN 108074752 A CN108074752 A CN 108074752A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 66
- 239000003990 capacitor Substances 0.000 title claims abstract description 45
- 238000007540 photo-reduction reaction Methods 0.000 title claims abstract description 21
- 239000012528 membrane Substances 0.000 claims abstract description 21
- 239000003054 catalyst Substances 0.000 claims abstract description 15
- 239000003792 electrolyte Substances 0.000 claims abstract description 15
- 238000007740 vapor deposition Methods 0.000 claims abstract description 13
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- -1 polyethylene terephthalate Polymers 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 11
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- 238000002360 preparation method Methods 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
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- 229920001223 polyethylene glycol Polymers 0.000 claims description 7
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
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- IYDGMDWEHDFVQI-UHFFFAOYSA-N phosphoric acid;trioxotungsten Chemical compound O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.OP(O)(O)=O IYDGMDWEHDFVQI-UHFFFAOYSA-N 0.000 claims description 4
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- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
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- 239000002184 metal Substances 0.000 claims description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
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- 238000012546 transfer Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
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- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 150000001450 anions Chemical class 0.000 claims description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
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- 239000010931 gold Substances 0.000 claims description 2
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- 230000007935 neutral effect Effects 0.000 claims description 2
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229940060038 chlorine Drugs 0.000 claims 1
- VFNGKCDDZUSWLR-UHFFFAOYSA-L disulfate(2-) Chemical compound [O-]S(=O)(=O)OS([O-])(=O)=O VFNGKCDDZUSWLR-UHFFFAOYSA-L 0.000 claims 1
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- IBZJNLWLRUHZIX-UHFFFAOYSA-N 1-ethyl-3-methyl-2h-imidazole Chemical compound CCN1CN(C)C=C1 IBZJNLWLRUHZIX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
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- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- UYDPQDSKEDUNKV-UHFFFAOYSA-N phosphanylidynetungsten Chemical compound [W]#P UYDPQDSKEDUNKV-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention provides a kind of method that photoreduction met hod prepares graphene-based planarization micro super capacitor, belongs to the preparing technical field of planarization micro super capacitor.This method is:(1) using graphene oxide and photochemical catalyst as raw material, raw material is prepared into membrane electrode using a variety of membrane electrode processing methods;(2) homemade mask plate is covered in membrane electrode overlying, graphene oxide is reduced using the light of some strength and the patterned processing of microelectrode;(3) last layer collector is plated on Graphene electrodes surface by the method for vapor deposition;(4) mask plate is removed, suitable electrolyte is coated in electrode surface, so as to obtain high-performance, planarization micro super capacitor.The technology have the advantages that it is simple for process, convenient for control, processing cost it is low, it is efficient, can be mass-produced, the micro-nano devices such as MEMS, microrobot, implantable medical device field can be widely used in, is laid a good foundation for the development of micro-nano electronic equipment.
Description
Technical field
The invention belongs to micro-nano device manufacturing field, it is miniature super to prepare graphene-based planarization for a kind of specially photoreduction met hod
The method of grade capacitor.
Background technology
The fast development of miniaturized electronic devices (such as MEMS, microrobot, miniature implantable medical device)
It greatly have stimulated the active demand to miniature power source.Micro super capacitor is due to having higher power density, energy
Density, excellent cycle performance are increasingly becoming a kind of emerging chip energy storage device.At present, Electrode material, screening are passed through
Matched electrolyte and the preparation process of membrane electrode is optimized, the research and development of micro super capacitor have taken
Obtained tremendous improvement.However, while improving the chemical property of micro super capacitor, simplifying micro-configuration processing technology,
Micro super capacitor is mass produced and is still difficult to realize.
Planar miniature ultracapacitor is with ion transmission range is extremely short, it is excellent to be easy to integrate with the electronic equipment minimized
Point.Graphene is due to high theoretical specific surface area (2630m2g-1), high theoretical electric specific capacity (550F g-1), high conductivity makes
It becomes a kind of electrode material of ideal plane micro super capacitor.Graphene-based planar miniature ultracapacitor
The advantage of graphene and plane configuration is sufficiently make use of, makes that entire device is thinner, volume smaller.Preparing graphene on a large scale
During base micro super capacitor, appropriate reduction is carried out to graphene oxide and accurately processing is to microelectrode progress
It is vital.At present, the method prepared applied to the redox graphene of micro super capacitor is mainly electronation
And thermal reduction.Chemical reduction method is needed using toxic chemical reagent (such as hydrazine hydrate), and the temperature of thermal reduction is generally high
In 800 DEG C so that this method and the preparation process of electronic equipment are incompatible.The processing method of microelectrode includes traditional photoetching
Method, electrochemical deposition and plasma etching, these methods preparation process is complicated, and high to equipment requirement, time-consuming, uncontrollable,
And be difficult prepare miniature ultracapacitor complex-shaped, that size resolution is high, therefore it is serious hinder its move towards actually
Using.Therefore, a kind of low cost, high efficiency, easily operated, precisely controllable micro super capacitor magnanimity technology of preparing are found
Invention for graphene-based micro super capacitor practical application have important strategic importance.
The content of the invention
It is an object of the invention to provide the sides that a kind of photoreduction met hod prepares graphene-based planarization micro super capacitor
Method.This method has many advantages, such as that inexpensive, efficient, easily operated, controllability is good, therefore it is micro- that one kind can be used as to prepare on a large scale
The ideal method of type ultracapacitor.
A kind of method that photoreduction met hod prepares graphene-based planarization micro super capacitor, this method mainly include following
Step:
(1) preparation of membrane electrode:Using graphene oxide and photochemical catalyst as raw material, a variety of thin-film electros are utilized in substrate
Raw material is prepared into electrode by the preparation method of pole;
(2) photo-reduction graphene oxide and patterned electrodes structure are portrayed:Homemade cover is covered in membrane electrode overlying
Graphene oxide under light source is reduced to graphene by template using the light of some strength;
(3) vapor deposition of collector:Last layer collector is plated on the surface of Graphene electrodes by the method for vapor deposition again;
(4) vapor deposition of collector:Mask plate is removed, suitable electrolyte is coated in electrode surface, encapsulates to obtain height
The planar miniature ultracapacitor of performance.
In the present invention, in order to prepare high performance micro super capacitor, used raw material is various sizes of oxidation
Graphene, lateral dimension size are 1nm~500 μm.Including large stretch of graphene oxide (Transverse Crystallite Size >=100 μm), commonly
Graphene oxide (1~10 μm of Transverse Crystallite Size), nano graphene oxide (100~200nm of Transverse Crystallite Size) and graphite
Alkene quantum dot (Transverse Crystallite Size≤10nm).
In the present invention, in order to prepare high performance micro super capacitor, the photochemical catalyst used includes titanium dioxide (5
~30nm), cadmium sulfide, tungsten oxide, phosphotungstic acid, carbonitride or molybdenum disulfide, be preferably titanium dioxide (5~10nm) or phosphorus tungsten
Acid.
The preparation method of graphene oxide, graphene oxide/photocatalyst film electrode includes filtering transfer in the present invention
Method, spraying process, spin-coating method, knife coating, ink-jet printing etc. preferably filter transfer method and spraying process;
Substrate is all dielectric material substrates, including polyethylene terephthalate, silicon chip, quartz glass, each
Kind membrane, paper, textile material etc. are preferably polyethylene terephthalate, silicon chip and quartz glass.
The thickness of membrane electrode is 0.01~500 μm, is preferably 0.05~100 μm, graphene oxide and photochemical catalyst
Mass ratio is 1:0.01~100, it is preferably 1:0.1~10.
The configuration for the metal mask plate that the present invention uses includes level-crossing finger-type, concentric ring type, parallel line type, parallel folding
Line style, concentric interdigital etc., the number of identical configuration or various configuration is 1-1000 on same mask plate, is preferably
1~200, the size of individual devices mask plate is 1 μm~10cm, preferably 1 μm~1cm.
The light source that the present invention uses include ultraviolet lamp (low pressure mercury lamp, medium pressure mercury lamp, high-pressure sodium lamp), xenon lamp, laser pen or
Halogen tungsten lamp etc..The electrical power power of light source is 1~500W, and optical power density is 1~2000mw cm-2;Light application time for 1min~
48h;Preferably 0.5~20h.
The collector that the present invention uses is the metal of the electric conductivity such as gold, platinum, nickel, copper, aluminium, and thickness is 5~200nm, preferably
For 20~60nm.
The electrolyte that the present invention uses includes water system electrolyte (acid, neutral, alkalescence), is preferably sulfuric acid, sodium sulphate, hydrogen
Potassium oxide,
Il electrolyte:Cation mainly have glyoxaline cation, pyridylium, piperidines cation, pyrroles's sun from
Son, indoles cation, quaternary ammonium cation, trialkyl sulphur cation etc.,
Anion mainly has iodide ion, bromide ion, chlorion, tetrafluoroborate, hexafluorophosphate, nitrate anion, hydrogen sulfate
Salt, trifluoromethanesulp-onyl -onyl imide etc. are preferably 1- ethyl-3-methylimidazole bis-trifluoromethylsulfoandimides salt, 1- ethyl -3- methyl
Tetrafluoroborate, 1- butyl -3- methylimidazolium hydrogen sulphate salt;
Solid-state electrolytic solution:Sulfuric acid/polyethylene glycol, phosphoric acid/polyethylene glycol, sodium chloride/polyethylene glycol etc..
The encapsulating material of the present invention is polymethyl methacrylate (PMMA) and organic glass, is specially cut into PMMA
It is suitably sized, it is placed on around micro super capacitor, lid two panels organic glass piece is sealed against respectively up and down.
The present invention has the following advantages that:The present invention utilizes photoreduction using graphene oxide and photochemical catalyst as raw material
Technology obtains micro super capacitor, and breaching traditional photo-etching processes, electrodeposition technology etc., time-consuming, technique is difficult to control
System, the limitation of flow complexity, greatly reduce processing cost, improve processing efficiency, quick, large batch of can prepare
Micro super capacitor with particular geometric configuration and size.The present invention can be widely used in MEMS, micro computer
The micro-nano devices fields such as device people, miniature implantable medical device.
Description of the drawings
Fig. 1 photoreduction met hods prepare micro super capacitor flow chart (a), mechanism figure (b).
The micro super capacitor of Fig. 2 various configurations.
The micro super capacitor that Fig. 3 are prepared on a large scale.
Specific embodiment
Embodiment 1
It is (1 first by titanium dioxide optical catalyst and graphene oxide mass ratio:0.1) ultrasonic disperse is in aqueous solution.
A certain amount of suspension is taken to be filtered by vacuum, is then transferred in PET base, obtained thickness of electrode is 150nm.Then, thin
Membrane electrode overlying covers a homemade mask plate (interdigital configuration, refers to long 1.4cm, and wide 0.1cm refers to spacing 0.1cm), utilizes
Graphene oxide under light source is reduced to graphene (as shown in Figure 1) by the ultraviolet light of 500W;Pass through the side of vapor deposition again
Method is in the golden collector of the surface of Graphene electrodes plating 45nm;Finally, mask plate is removed, in electrode surface drop coating sulfuric acid/poly- second
Glycol solid electrolyte, so as to obtain level-crossing finger-type micro super capacitor (as shown in Figure 2 a).
Embodiment 2
It is (1 first by cadmium sulfide photochemical catalyst and graphene oxide mass ratio:3) ultrasonic disperse is in aqueous solution.Take one
Quantitative suspension spray is 500nm in the thickness of electrode in silicon chip substrate, obtained.Then, one is covered in membrane electrode overlying
A homemade mask plate (concentric circles configuration, size are 1 μm, 6 series connection), will be under light source using the ultraviolet light of 50W
Graphene oxide is reduced to graphene (as shown in Figure 1);Plate 20nm's on the surface of Graphene electrodes by the method for vapor deposition again
Nickel set fluid;Finally, mask plate is removed, it is concentric so as to obtain in electrode surface drop coating sodium chloride/polyethylene glycol solid electrolyte
Round micro super capacitor (such as Fig. 2 b, shown in 3b).
Embodiment 3
It is (1 first by tungsten oxide photcatalyst and graphene oxide mass ratio:5) ultrasonic disperse is in aqueous solution.Take one
Quantitative suspension is spun in quartz substrate, and obtained thickness of electrode is 1000nm.Then, one is covered in membrane electrode overlying
A homemade mask plate (parallel lines configuration, size are 1 μm, 4 series connection), using the xenon lamp of 500W by the oxygen under light source
Graphite alkene is reduced to graphene (as shown in Figure 1);The platinum of 50nm is plated on the surface of Graphene electrodes by the method for vapor deposition again
Collector;Finally, mask plate is removed, is electrolysed in electrode surface drop coating 1- ethyl-3-methylimidazole bis-trifluoromethylsulfoandimides salt
Matter, so as to obtain parallel type micro super capacitor (such as Fig. 2 c, shown in 3c).
Embodiment 4
It is (1 first by phosphotungstic acid photochemical catalyst and graphene oxide mass ratio:10) ultrasonic disperse is in aqueous solution.Take one
Quantitative suspension spray is 1000nm in the thickness of electrode in A4 paper substrates, obtained.Then, one is covered in membrane electrode overlying
A homemade mask plate (parallel fold lines configuration, size are 1 μm, 100 series connection), will be exposed to light source using the ultraviolet lamp of 500W
Under graphene oxide be reduced to graphene (as shown in Figure 1);It is plated again by the method for vapor deposition on the surface of Graphene electrodes
The copper current collector of 50nm;Finally, mask plate is removed, is electrolysed in electrode surface drop coating 1- ethyl-3-methylimidazoles tetrafluoroborate
Matter, so as to obtain parallel fold lines type micro super capacitor (such as Fig. 2 d, shown in 3d).
Embodiment 5
It is (1 first by nitrogen carbide photochemical catalyst and graphene oxide mass ratio:10) ultrasonic disperse is in aqueous solution.Take one
Quantitative suspension blade coating is 2 μm in the thickness of electrode on woven fabric base bottom, obtained.Then, one is covered in membrane electrode overlying
A homemade mask plate (parallel concentric circles configuration, size are 500 μm), using the halogen tungsten lamp of 180W by the oxygen under light source
Graphite alkene is reduced to graphene (as shown in Figure 1);The niobium of 45nm is plated on the surface of Graphene electrodes by the method for vapor deposition again
Collector;Finally, mask plate is removed, in electrode surface drop coating 1- butyl -3- methylimidazolium hydrogen sulphate salt electrolytes, so as to obtain
Parallel concentric circles micro super capacitor (as shown in Figure 2 e).
Embodiment 6
It is (1 first by phosphotungstic acid photochemical catalyst and graphene oxide mass ratio:10) ultrasonic disperse is in aqueous solution.Take one
Quantitative suspension spray is 1000nm in the thickness of electrode in A4 paper substrates, obtained.Then, one is covered in membrane electrode overlying
A homemade mask plate (parallel fold lines configuration, size are 1 μm, 200 series connection), will be exposed to light source using the ultraviolet lamp of 500W
Under graphene oxide be reduced to graphene (as shown in Figure 1);It is plated again by the method for vapor deposition on the surface of Graphene electrodes
The copper current collector of 50nm;Finally, mask plate is removed, it is parallel so as to obtain in electrode surface drop coating phosphoric acid/polyvinyl alcohol electrolyte
Broken line type micro super capacitor (such as Fig. 2 d, shown in 3d).
Embodiment 7
It is (1 first by molybdenum disulfide photochemical catalyst and graphene oxide mass ratio:2) ultrasonic disperse is in aqueous solution.It takes
A certain amount of suspension spray is 200nm in the thickness of electrode in A4 paper substrates, obtained.Then, covered in membrane electrode overlying
One homemade mask plate (parallel fold lines configuration, size are 1 μm, 100 series connection), will be exposed to light using the ultraviolet lamp of 500W
Graphene oxide under source is reduced to graphene (as shown in Figure 1);It is plated again by the method for vapor deposition on the surface of Graphene electrodes
The copper current collector of 50nm;Finally, mask plate is removed, is electrolysed in electrode surface drop coating 1- ethyl-3-methylimidazoles tetrafluoroborate
Matter, so as to obtain parallel fold lines type micro super capacitor (such as Fig. 2 d, shown in 3d).
Claims (11)
1. a kind of method that photoreduction met hod prepares graphene-based planarization micro super capacitor, which is characterized in that including following
Step:
(1) preparation of membrane electrode:Using graphene oxide and photochemical catalyst as raw material, a variety of membrane electrodes are utilized in substrate
Raw material is prepared into graphene oxide, graphene oxide/photochemical catalyst combination electrode by preparation method;
(2) photo-reduction graphene oxide and patterned electrodes structure are portrayed:Homemade planarization is covered in membrane electrode overlying
Graphene oxide under light source is restored arbitrary configuration and the patterning of size by mask plate using the light of some strength
Graphene electrodes;
(3) vapor deposition of collector:Last layer collector is plated on the surface of Graphene electrodes by the method for vapor deposition;
(4) coating and encapsulation of electrolyte:Mask plate is removed, suitable electrolyte is coated in electrode surface, is prepared after encapsulation
Planarize micro super capacitor.
2. the method that photoreduction met hod described in accordance with the claim 1 prepares graphene-based planarization micro super capacitor, special
Sign is:In the step (1), the lateral dimension of graphene oxide is 1nm~500 μm;Specially:Transverse Crystallite Size >=
100 μm of large stretch of graphene oxide, the common graphene oxide of 1~10 μm of Transverse Crystallite Size, Transverse Crystallite Size for 100~
The nano graphene oxide of 200nm or the graphene quantum dot of Transverse Crystallite Size≤10nm.
3. the method that photoreduction met hod described in accordance with the claim 1 prepares graphene-based planarization micro super capacitor, special
Sign is:Step (1) photochemical catalyst includes titanium dioxide, cadmium sulfide, tungsten oxide, phosphotungstic acid, carbonitride or molybdenum disulfide.
4. the method that photoreduction met hod described in accordance with the claim 1 prepares graphene-based planarization micro super capacitor, special
Sign is:The thickness of membrane electrode is 0.01~500 μm in the step (1), the mass ratio of graphene oxide and photochemical catalyst
For 1:0.01~100.
5. the method that photoreduction met hod described in accordance with the claim 1 prepares graphene-based planarization micro super capacitor, special
Sign is:In the step (1) substrate be all dielectric material substrates, including polyethylene terephthalate, silicon chip,
Quartz glass, various membranes, paper or textile material.
6. the method that photoreduction met hod described in accordance with the claim 1 prepares graphene-based planarization micro super capacitor, special
Sign is:The preparation method of a variety of membrane electrodes includes filtering transfer method, spraying process, spin-coating method, blade coating in the step (1)
Method, ink-jet printing or other.
7. the method for graphene-based planarization micro super capacitor, feature are prepared according to photoreduction met hod described in claim 1
It is:In the step (2), the configuration of the planarization mask plate used includes level-crossing finger-type, concentric ring type, parallel lines
Type, parallel fold lines type, concentric interdigital and other, on same mask plate the number of identical configuration or various configuration be 1
~1000, the size of individual devices mask plate is 1 μm~10cm.
8. the method that photoreduction met hod described in accordance with the claim 1 prepares graphene-based planarization micro super capacitor, special
Sign is:In the step (2), used light source include ultraviolet lamp, xenon lamp, laser pen, halogen tungsten lamp or other;The electricity of light source
Power power is 1~500W, and optical power density is 1~2000mw cm-2, light application time is 1min~48h;The ultraviolet lamp is
Low pressure mercury lamp, medium pressure mercury lamp or high-pressure sodium lamp.
9. the method for graphene-based planarization micro super capacitor, feature are prepared according to photoreduction met hod described in claim 1
It is:In the step (3), collector is the metal of gold, platinum, nickel, copper, aluminium or other electric conductivity, and thickness is 5~200nm.
10. the method for graphene-based planarization micro super capacitor, feature are prepared according to photoreduction met hod described in claim 1
It is:In the step (4), the electrolyte used is water system electrolyte, il electrolyte or solid-state electrolytic solution;
The water system electrolyte is acid, neutral, alkalescence;
In the il electrolyte cation mainly have glyoxaline cation, pyridylium, piperidines cation, pyrroles's sun from
Son, indoles cation, quaternary ammonium cation, trialkyl sulphur cation and other;Anion mainly have iodide ion, bromide ion, chlorine from
Son, tetrafluoroborate, hexafluorophosphate, nitrate anion, disulfate, trifluoromethanesulp-onyl -onyl imide or other;
The solid-state electrolytic solution is:Sulfuric acid/polyethylene glycol, phosphoric acid/polyethylene glycol or sodium chloride/polyethylene glycol.
11. the method for graphene-based planarization micro super capacitor, feature are prepared according to photoreduction met hod described in claim 1
It is:In the step (4), encapsulating material is polymethyl methacrylate and organic glass, concretely comprises the following steps and cuts out PMMA
Into suitably sized, it is placed on around micro super capacitor, lid two panels organic glass piece is sealed against respectively up and down.
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